KR102671168B1 - Substrate cleaning method and substrate cleaning apparatus - Google Patents

Abstract

[Problem] The technology disclosed in the present specification is a technology for suppressing the remaining cleaning liquid in the cleaning nozzle for cleaning a substrate held by a Bernoulli chuck.
[Solution] The substrate cleaning method related to the technology disclosed in the present specification is a substrate cleaning method of cleaning a substrate held by a Bernoulli chuck, and is applied to the lower surface of the substrate, which is the surface opposite to the holding surface holding the substrate, through a cleaning nozzle. It includes a step of supplying a cleaning liquid, and a step of suctioning the inside of the cleaning nozzle while the substrate is held by a Bernoulli chuck after the step of supplying the cleaning fluid.

Description

Substrate cleaning method and substrate cleaning device {SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING APPARATUS}

The technology disclosed in this specification relates to a technology for cleaning a substrate. Substrates subject to processing including cleaning include, for example, semiconductor wafers, glass substrates for liquid crystal displays, substrates for flat panel displays (FPD) such as organic EL (electroluminescence) displays, substrates for optical disks, and magnetics. Included are disk substrates, magneto-optical disk substrates, photomask glass substrates, ceramic substrates, field emission display (FED) substrates, or solar cell substrates.

As a method of holding a substrate in a substrate processing apparatus, there is a Bernoulli chuck that uses Bernoulli's principle to hold the substrate in a non-contact manner (for example, see Patent Document 1).

In a substrate processing apparatus, when cleaning a substrate held by a Bernoulli chuck, cleaning liquid may be discharged not only on the upper surface of the substrate but also on the lower surface to clean the substrate.

Japanese Patent Publication No. 2016-149420

In a cleaning method in which cleaning liquid is discharged onto the lower surface of the substrate using a cleaning nozzle disposed below the substrate, cleaning liquid may remain in the cleaning nozzle after the cleaning process. Since the cleaning liquid remaining in the cleaning nozzle may cause particles to adhere to the substrate in the subsequent processing process, it is desirable to remove it appropriately.

The technology disclosed in this specification was developed in consideration of the problems described above, and is a technology for suppressing the remaining cleaning liquid in the cleaning nozzle for cleaning the substrate held by the Bernoulli chuck.

A substrate cleaning method, which is a first aspect of the technology disclosed in the present specification, is a substrate cleaning method of cleaning a substrate held by a Bernoulli chuck, wherein a cleaning nozzle is installed on the lower surface of the substrate, which is the surface opposite to the holding surface holding the substrate. A process of supplying a cleaning liquid through a process, and a process of suctioning the inside of the cleaning nozzle while the substrate is held by a Bernoulli chuck after the process of supplying the cleaning liquid.

The substrate cleaning method, which is a second aspect of the technology disclosed in the present specification, is related to the substrate cleaning method, which is the first aspect, by applying a chemical solution to the upper surface of the substrate before the step of supplying the cleaning liquid to the lower surface of the substrate. During the supply process, the process of supplying the chemical solution, and the process of supplying the cleaning liquid to the lower surface of the substrate, a gas nozzle is installed on the lower surface of the substrate in a state in which the substrate is held by a Bernoulli chuck. A process of supplying gas through the gas nozzle is further provided, and the gas supplied through the gas nozzle flows from the radial inner side of the substrate to the radial outer side when viewed in plan.

In the substrate cleaning method as a third aspect of the technology disclosed in this specification, in relation to the substrate cleaning method as a second aspect, the gas nozzle is a nozzle common to the cleaning nozzle.

A substrate cleaning method, which is a fourth aspect of the technology disclosed in the present specification, relates to the substrate cleaning method, which is any one of the first to third aspects, and, during the process of suctioning the inside of the cleaning nozzle, the substrate cleaning method is provided on the upper surface of the substrate. An additional process for supplying cleaning liquid is provided.

The substrate cleaning method, which is a fifth aspect of the technology disclosed in the present specification, relates to the substrate cleaning method, which is any one of the first to fourth aspects, during the process of supplying the cleaning liquid to the lower surface of the substrate, A process of supplying the cleaning liquid to the upper surface is additionally provided.

A substrate cleaning method that is a sixth aspect of the technology disclosed in the present specification relates to the substrate cleaning method that is any one of the first to fifth aspects, and includes a step of drying the substrate after the step of suctioning the inside of the cleaning nozzle. It is additionally provided with.

The substrate cleaning method, which is the seventh aspect of the technology disclosed in the present specification, is related to the substrate cleaning method, which is the sixth aspect, wherein suction in the cleaning nozzle is also performed in the process of drying the substrate, and the substrate is dried. In the process, the pressure in the space between the substrate and the holding surface is adjusted within a predetermined range by controlling at least one of the rotation speed of the substrate and the amount of suction in the cleaning nozzle.

The substrate cleaning method, which is the eighth aspect of the technology disclosed in the specification of the present application, is related to the substrate cleaning method, which is the sixth or seventh aspect, wherein the process of drying the substrate is carried out in a state where the substrate is not held by the Bernoulli chuck. , which is performed without rotating the substrate, and further includes a step of supplying gas to the lower surface of the substrate during the drying process of the substrate, wherein the supplied gas is in a radial direction of the substrate when viewed from a planar view. It flows from the inside towards the radial outside.

The substrate cleaning method, which is the ninth aspect of the technology disclosed in the present specification, is related to the substrate cleaning method, which is the sixth or seventh aspect, wherein the step of drying the substrate is performed multiple times, and the step of drying the substrate is, This is done without rotating the substrate in a state where the substrate is not held by the Bernoulli chuck, and then the process is performed by rotating the substrate while the substrate is held by the Bernoulli chuck, and during the process of drying the substrate without rotating it. , further comprising a step of supplying gas to the lower surface of the substrate, wherein the supplied gas flows from the radial inner side of the substrate to the radial outer side when viewed in plan.

A substrate cleaning device that is a tenth aspect of the technology disclosed in the present specification is a substrate cleaning device that cleans a substrate held by a Bernoulli chuck, and a cleaning nozzle is provided on the lower surface of the substrate, which is the surface opposite to the holding surface holding the substrate. It includes means for supplying a cleaning liquid through the cleaning liquid, and means for suctioning the inside of the cleaning nozzle while the substrate is held by a Bernoulli chuck after the cleaning liquid is supplied.

According to at least the first and tenth aspects of the technology disclosed in this specification, when a substrate is held by a Bernoulli chuck, it is possible to suppress the cleaning liquid remaining in the cleaning nozzle located on the lower surface of the substrate.

In addition, the purpose, features, aspects, and advantages related to the technology disclosed in this specification will become more clear from the detailed description and accompanying drawings shown below.

1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus according to an embodiment.
FIG. 2 is a diagram showing an example of the configuration of the control unit whose example is shown in FIG. 1.
Figure 3 is a diagram schematically showing an example of the configuration of a processing unit according to the embodiment.
Figure 4 is a diagram schematically showing an example of the main structure of a spin chuck.
FIG. 5 is a flowchart showing operations in a processing unit during operation of the substrate processing apparatus.
Figure 6 is a diagram showing the sequence of substrate processing.
Fig. 7 is a diagram showing the sequence of substrate processing.
Fig. 8 is a diagram showing the sequence of substrate processing.
Fig. 9 is a diagram showing the sequence of substrate processing.

Hereinafter, embodiments will be described with reference to the attached drawings. In the following embodiments, detailed features and the like are shown for description of the technology, but they are examples and not all of them are essential features for the embodiments to be implementable.

In addition, the drawings are schematically shown, and for convenience of explanation, structures are omitted or simplified in the drawings as appropriate. In addition, the interrelationships between the size and position of the configurations shown in the different drawings are not necessarily accurately described and may be changed as appropriate. Additionally, even in drawings such as plan views other than cross-sectional views, hatching may be added to facilitate understanding the content of the embodiments.

In addition, in the description shown below, the same components are indicated by the same symbols, and their names and functions are also assumed to be the same. Therefore, detailed descriptions of them may be omitted to avoid duplication.

In addition, in the description given in the specification of the present application, when a certain component is described as “provided,” “includes,” or “has,” it is an exclusive meaning that excludes the presence of other components, unless specifically stated. It is not an expression.

In addition, in the description described in the specification of this application, even if ordinal numbers such as “first” or “second” are used, these terms are used for convenience in order to facilitate understanding of the content of the embodiments. It is used and is not limited to the order in which these ordinal numbers can occur.

In addition, in the description described in the specification of this application, expressions indicating relative or absolute positional relationships, for example, “in one direction”, “along one direction”, “parallel”, “orthogonal”, “center”, Unless otherwise specified, “concentric” or “coaxial” includes cases where the positional relationship is strictly expressed, and cases where the angle or distance is displaced within the range where tolerance or the same level of function is obtained. do.

In addition, in the description described in the specification of this application, specific positions or directions such as “top”, “bottom”, “left”, “right”, “side”, “bottom”, “table”, or “this” are used. Even if meaningful terms are used, these terms are used for convenience to facilitate understanding of the content of the embodiment, and are not related to the position or direction when actually implemented.

In addition, in the description described in the specification of this application, “… 'The upper surface of' or '... When it is described as “lower surface of” etc., in addition to the upper or lower surface of the target component, it also includes the state in which other components are formed on the upper or lower surface of the target component. That is, for example, when it is described as “B installed on the upper surface of A”, it does not prevent other components “bottle” from being interposed between A and B.

＜Form of implementation＞

Hereinafter, the substrate processing apparatus according to this embodiment will be described.

＜Configuration of substrate processing equipment＞

FIG. 1 is a plan view schematically showing an example of the configuration of the substrate processing apparatus 1 according to the present embodiment. The substrate processing apparatus 1 includes a load port 601, an indexer robot 602, a center robot 603, a control unit 90, and at least one processing unit 600 (four processing units in FIG. 1). processing unit).

The processing unit 600 is a single-wafer type device that can be used to process a substrate, and is specifically a device that performs a process to remove organic substances adhering to the substrate W. The organic substance adhering to the substrate W is, for example, a used resist film. This resist film is used, for example, as an implantation mask for an ion implantation process.

Additionally, processing unit 600 may have a chamber 180 . In that case, by controlling the atmosphere in the chamber 180 by the control unit 90, the processing unit 600 can process the substrate in a desired atmosphere.

The control unit 90 includes each of the components in the substrate processing apparatus 1 (a shutter 50C, an adjustment valve 56, an adjustment valve 62, an adjustment valve 111, and an adjustment valve 112 described later, The operation of the control valve 113, the rotation drive source 152A, the rotation drive source 160A, the rotation drive unit 193, etc.) can be controlled. The carrier C is a container that accommodates the substrate W. Additionally, the load port 601 is a container holding mechanism that holds a plurality of carriers C. The indexer robot 602 can transport the substrate W between the load port 601 and the substrate placement unit 604 . The center robot 603 can transport the substrate W between the substrate placement unit 604 and the processing unit 600 .

With the above configuration, the indexer robot 602, the substrate placement unit 604, and the center robot 603 serve as transport mechanisms that transport the substrate W between each processing unit 600 and the load port 601. It functions.

The unprocessed substrate W is taken out from the carrier C by the indexer robot 602. Then, the unprocessed substrate W is delivered to the center robot 603 through the substrate placement unit 604 .

The center robot 603 carries the unprocessed substrate W into the processing unit 600 . Then, the processing unit 600 processes the substrate W.

The substrate W that has been processed in the processing unit 600 is taken out from the processing unit 600 by the center robot 603 . Then, the processed substrate W is transferred to the indexer robot 602 through the substrate placing unit 604 after passing through another processing unit 600 as necessary. The indexer robot 602 loads the processed substrate W into the carrier C. As described above, processing on the substrate W is performed.

FIG. 2 is a diagram showing an example of the configuration of the control unit 90 whose example is shown in FIG. 1. The control unit 90 may be configured by a general computer having an electric circuit. Specifically, the control unit 90 includes a central processing unit (i.e., CPU) 91, read only memory (i.e., ROM) 92, and random access memory. That is, it has a RAM 93, a recording device 94, an input unit 96, a display unit 97, and a communication unit 98, and a bus line 95 connecting them to each other.

ROM 92 stores basic programs. RAM 93 is used as a work area when CPU 91 performs predetermined processing. The recording device 94 is comprised of a non-volatile recording device such as a flash memory or hard disk device. The input unit 96 is comprised of various switches, touch panels, etc., and receives input setting instructions such as processing recipes from the user. The display unit 97 is comprised of, for example, a liquid crystal display device and a lamp, and displays various information under the control of the CPU 91. The communication unit 98 has a data communication function through a local area network (LAN) or the like.

In the recording device 94, a plurality of modes for controlling each component of the substrate processing device 1 in FIG. 1 are preset. When the CPU 91 executes the processing program 94P, one mode among the plurality of modes is selected, and each configuration is controlled in that mode. Additionally, the processing program 94P may be recorded on an external recording medium. Using this recording medium, the processing program 94P can be installed in the control unit 90. In addition, part or all of the functions executed by the control unit 90 do not necessarily need to be realized by software, and may be realized by hardware such as a dedicated logic circuit.

FIG. 3 is a diagram schematically showing an example of the configuration of the processing unit 600 according to the present embodiment. Additionally, from the viewpoint of making the configuration easier to understand, some components may be omitted or simplified in the drawings.

The processing unit 600 performs fluid processing on the substrate W using a processing liquid (i.e., a processing liquid containing a chemical liquid, a cleaning liquid, or a rinsing liquid) or gas, processing using electromagnetic waves such as ultraviolet rays, or physical processing. Various treatments (such as cleaning treatment or etching treatment) such as cleaning treatment (for example, brush cleaning or spray nozzle cleaning, etc.) are performed.

As an example shown in FIG. 3, the processing unit 600 includes a box-shaped processing chamber 50 having an internal space, and a substrate W while maintaining one substrate W in a horizontal position within the processing chamber 50. ), a spin chuck 51 that rotates the substrate W around a vertical rotation axis Z1 passing through the center of the substrate W, and a cylindrical shape surrounding the spin chuck 51 around the rotation axis Z1 of the substrate W. It is provided with a processing cup 511.

The processing chamber 50 is surrounded by a box-shaped partition wall 50A. An opening 50B is formed in the partition wall 50A for loading and unloading the substrate W into the processing chamber 50 .

The opening 50B is opened and closed by the shutter 50C. The shutter 50C has a closed position (indicated by a two-dash line in FIG. 3) covering the opening 50B and an open position opening the opening 50B by means of a shutter lifting mechanism (not shown here). (indicated by a solid line in FIG. 3) is raised and lowered.

When carrying in and out of the substrate W, the center robot 603 accesses the processing chamber 50 through the opening 50B using a robot hand. As a result, the unprocessed substrate W can be placed on the upper surface of the spin chuck 51, or the processed substrate W can be removed from the spin chuck 51.

As an example shown in FIG. 3, the spin chuck 51 includes a plate 101 facing the lower surface of the substrate W, a rotation axis 192 connected to the lower surface of the plate 101, and a rotation axis 192. It is provided with a rotation drive unit 193 that rotates around the rotation axis Z1.

As an example shown in FIG. 3 , the processing unit 600 includes a chemical liquid nozzle 52 that discharges a chemical liquid toward the upper surface of the substrate W held on the spin chuck 51, and a chemical liquid nozzle 52. A chemical liquid arm 152 mounted at the tip, a chemical liquid supply pipe 54 that guides the chemical liquid from a chemical liquid supply source (not shown here) to the chemical liquid nozzle 52, and the inside of the chemical liquid supply pipe 54. It is provided with a control valve 56 that opens and closes.

The chemical arm 152 includes a rotation drive source 152A and an arm portion 152B that can be rotated by the rotation drive source 152A mounted on one end and a chemical liquid nozzle 52 mounted on the other end.

The chemical liquid arm 152 rotates the arm portion 152B by the rotation drive source 152A, so that the chemical liquid nozzle 52 mounted on the tip of the arm portion 152B is held in the spin chuck 51. It becomes possible to move along the upper surface of (W). That is, the chemical liquid nozzle 52 mounted on the tip of the arm portion 152B can move in the horizontal direction. Here, the driving of the rotation drive source 152A is controlled by the control unit 90.

Opening and closing of the adjustment valve 56 is controlled by the control unit 90. When the chemical liquid is supplied to the chemical liquid nozzle 52, the control valve 56 opens. On the other hand, when the supply of chemical liquid to the chemical liquid nozzle 52 is stopped, the control valve 56 is closed.

In addition, as an example shown in FIG. 3, the processing unit 600 includes a rinse liquid nozzle 60 that discharges a rinse liquid toward the upper surface of the substrate W held on the spin chuck 51, and a rinse liquid A rinse liquid arm 160 with a nozzle 60 mounted on the tip, and a rinse liquid supply pipe 61 that supplies rinse liquid from a rinse liquid supply source (not shown here) to the rinse liquid nozzle 60. and a control valve 62 for switching between supplying and stopping the supply of rinse liquid from the rinse liquid supply pipe 61 to the rinse liquid nozzle 60. As a rinse liquid, DIW (deionized water) or the like is used.

The rinse liquid arm 160 includes a rotational drive source 160A and an arm portion 160B that can be rotated by the rotational drive source 160A mounted on one end and on which a rinse liquid nozzle 60 is mounted on the other end. do.

In the rinse liquid arm 160, the arm portion 160B is rotated by the rotational drive source 160A, so that the rinse liquid nozzle 60 mounted on the tip of the arm portion 160B is held in the spin chuck 51. It becomes possible to move along the upper surface of the substrate (W). That is, the rinse liquid nozzle 60 mounted on the tip of the arm portion 160B can move in the horizontal direction. Here, the driving of the rotation drive source 160A is controlled by the control unit 90.

After the chemical liquid is supplied to the substrate W through the chemical liquid nozzle 52, the rinsing liquid is supplied to the substrate W from the rinse liquid nozzle 60, thereby washing away the chemical liquid adhering to the substrate W, etc. .

The processing cup 511 is installed to surround the spin chuck 51 and is raised and lowered in the vertical direction by a motor (not shown). The upper part of the processing cup 511 is raised and lowered between an upper position where the upper end is above the substrate W held by the spin chuck 51 and a lower position where the upper end is below the substrate W.

The processing liquid that scatters outward from the upper surface of the substrate W is caught on the inner surface of the processing cup 511. Then, the processing liquid received in the processing cup 511 is discharged from the bottom of the processing chamber 50 to the outside of the processing chamber 50 through the drain port 513 formed on the inside of the processing cup 511. It drains properly.

Additionally, an exhaust port 515 leading to the processing cup 511 is formed on the side of the processing chamber 50 . The atmosphere inside the processing chamber 50 is properly discharged out of the processing chamber 50 through the exhaust port 515 .

FIG. 4 is a diagram schematically showing an example of the main configuration of the spin chuck 51. The spin chuck 51 is provided with a plate 101 facing the lower surface of the substrate W. The plate 101 has a substantially disk shape. The upper surface 102 of the plate 101 is substantially flat and is arranged substantially horizontally. The diameter of the plate 101 is larger than the diameter of the substrate W when viewed from the top.

A rotation axis 192 is connected to the lower surface of the plate 101 (that is, the surface opposite to the upper surface 102). The rotation axis 192 rotates around the rotation axis Z1 by the rotation drive unit 193 shown in FIG. 3 . The rotation axis Z1 is parallel to the vertical direction Z. Additionally, the rotation axis Z1 is a line passing through the center of the plate 101.

When the rotation driver 193 rotates the rotation shaft 192, the plate 101 connected to the upper end of the rotation shaft 192 and the substrate W held thereon rotate in the horizontal plane.

The fixing pin 103 protrudes upward from the upper surface 102 of the plate 101. The fixing pin 103 contacts the lower surface 16 of the substrate W. More specifically, the fixing pin 103 contacts the lower surface 16 at the peripheral portion of the substrate W. Accordingly, the fixing pins 103 support the substrate W at a position higher than the upper surface 102 of the plate 101. Additionally, the outer peripheral portion of the substrate W may be held by a plurality of chuck pins, etc., not shown.

The fixing pin 103 does not contact the upper surface of the substrate W. That is, the fixing pins 103 allow the substrate W to move upward with respect to the fixing pins 103 . The fixing pin 103 does not contact the outer edge 20 of the substrate W. The fixing pins 103 themselves allow the substrate W to slide relative to the fixing pins 103 . In this way, the fixing pins 103 themselves do not hold the substrate W.

The spin chuck 51 is provided with an extraction port 104. The outlet 104 is formed on the upper surface 102 of the plate 101. The outlet 104 is disposed at a position where it overlaps the substrate W supported by the fixing pin 103 when viewed from the top. The outlet 104 blows out gas upward. The outlet 104 blows out gas between the upper surface 102 of the plate 101 and the lower surface 16 of the substrate W supported by the fixing pin 103. The extracted gas flows along the lower surface 16 of the substrate W supported by the fixing pins 103.

As a result, the outlet 104 sucks the substrate W. Specifically, as the gas flows along the lower surface 16 of the substrate W, negative pressure is formed between the upper surface 102 of the plate 101 and the lower surface 16 of the substrate W. That is, the air pressure received by the lower surface 16 of the substrate W is smaller than the air pressure experienced by the upper surface of the substrate W. Therefore, according to Bernoulli's principle, a downward force acts on the substrate W. That is, the substrate W is pulled downward (Bernoulli chuck). The substrate W is drawn toward the outlet 104 and the plate 101. However, the outlet 104 and the plate 101 do not contact the substrate W.

The outlet 104 draws the substrate W downward, and the fixing pin 103 contacts the lower surface 16 of the substrate W, so that the substrate W is supported and held at a predetermined position. maintain. Additionally, due to the suction force acting on the substrate W, the substrate W does not slide in the horizontal direction with respect to the fixing pins 103. That is, the spin chuck 51 attracts and holds the substrate W on the plate 101 .

The outlet 104 includes an outlet located in the center of the substrate W in plan view, and a plurality of outlets 106 located in the peripheral part of the substrate W in plan view. Among these, the outlet located in the center of the substrate W is common with the cleaning nozzle 105 that discharges the cleaning liquid (rinse liquid) in this embodiment.

The cleaning nozzle 105 is disposed on the rotation axis Z1 of the plate 101, for example. The outlet 106 is disposed radially outside the rotation axis Z1 of the plate 101 rather than the cleaning nozzle 105 . The outlet 106 is disposed radially inside the rotation axis Z1 of the plate 101 rather than the fixing pin 103. The outlet 106 is arranged on a circle around the rotation axis Z1, for example, when viewed from the top. Additionally, the outlet 106 is formed at an angle so as to blow out the gas to the radial outer side of the substrate.

Inside the rotating shaft 192 and the inside of the plate 101, a gas supply pipe 107 and a gas supply pipe 108 are provided for supplying gas from a gas supply source (not shown here) to the outlet 104. This is installed. The gas supply pipe 107 supplies gas to the cleaning nozzle 105 and a common outlet. Additionally, the gas supply pipe 108 supplies gas to the outlet 106.

The gas supplied to the cleaning nozzle 105 and the outlet 106 is, for example, an inert gas such as nitrogen or air. Additionally, the gas supplied to the cleaning nozzle 105 and the outlet 106 is, for example, high-pressure gas or compressed gas.

A control valve 111 is installed in the gas supply pipe 107. By controlling the opening and closing of the adjustment valve 111 by the control unit 90, the flow rate and timing of gas discharged from the cleaning nozzle 105 and the common discharge port are controlled. Similarly, a control valve 112 is installed in the gas supply pipe 108. By controlling the opening and closing of the control valve 112 by the control unit 90, the flow rate and timing of gas discharged from the outlet 106 are controlled.

The control valve 111 and the control valve 112 can be controlled independently of each other. Therefore, the flow rate of the gas blown out by the cleaning nozzle 105 and the flow rate of the gas blown out by the outlet 106 can be adjusted independently of each other.

In addition, inside the rotating shaft 192 and the inside of the plate 101, there is a rinse liquid supply pipe 109 for supplying rinse liquid from a rinse liquid supply source (not shown here) to the cleaning nozzle 105. It is installed. The rinse liquid supplied to the cleaning nozzle 105 is, for example, DIW (deionized water).

A control valve 113 is installed in the rinse liquid supply pipe 109. By controlling the opening and closing of the control valve 113 by the control unit 90, the flow rate and discharge timing of the rinse liquid discharged from the cleaning nozzle 105 are controlled.

The gas supply pipe 107 and the rinse liquid supply pipe 109 join near the cleaning nozzle 105. Therefore, when the rinse liquid is also supplied from the rinse liquid supply pipe 109 at the timing when gas is supplied from the gas supply pipe 107, the gas-liquid mixture of the rinse liquid and the inert gas flows from the cleaning nozzle 105 to the substrate (W ) is supplied to the bottom of the.

In addition, a plurality of position adjustment pins and a plurality of guide pins (not shown here) may be provided on the upper surface 102 of the plate 101. The position adjustment pin can contact the outer edge 20 of the substrate W supported by the fixing pin 103 and can adjust the position of the substrate W in the horizontal direction. The positioning pins are intermittently disposed along the outer edge 20 of the substrate W, for example, at 30° rotation intervals in the circumferential direction of the substrate W. The guide pin is a pin for preventing the substrate W held by the Bernoulli chuck from coming off the spin chuck 51 due to problems with the holding state, etc., and is used in the radial direction of the substrate W held by the spin chuck 51. On the outside, it is disposed in a position that does not contact the substrate W. Guide pins are intermittently disposed along the outer edge 20 of the substrate W, for example, at 30° rotation intervals in the circumferential direction of the substrate W.

＜About the operation of the substrate processing device＞

Next, an example of the operation of the substrate processing apparatus 1 will be described with reference to FIG. 5 . Specifically, a substrate processing method including cleaning of the substrate W will be described. 5 is a flowchart showing the operation of the processing unit 600 during the operation of the substrate processing apparatus 1.

The indexer robot 602 transports the substrate W from the carrier C in the load port 601 to the substrate placement unit 604 . The center robot 603 transports the substrate W from the substrate placement unit 604 to one processing unit 600. The processing unit 600 processes the substrate W. The center robot 603 transports the substrate W from the processing unit 600 to the substrate placement unit 604 . The indexer robot 602 transports the substrate W from the substrate placement unit 604 to the carrier C in the load port 601.

In the processing unit 600, the ends and lower surfaces of the substrate W are supported by a plurality of guide pins and fixing pins 103. As a result, the substrate W is held on one end by the spin chuck 51.

Here, the control valve 111 and the control valve 112 are appropriately controlled by the control unit 90, so that inert gas such as nitrogen is blown out from the cleaning nozzle 105 and the outlet 106. As a result, the gas blown out from the cleaning nozzle 105 is blown out at the central part of the lower surface of the substrate W, and further flows outward in the radial direction of the substrate W. Additionally, the gas blown out from the outlet 106 is blown out at a radial outward angle to the peripheral area of the lower surface of the substrate W, and also flows radially outward of the substrate W. The substrate W is held in non-contact with the spin chuck 51 according to Bernoulli's principle (Bernoulli chuck).

In the substrate processing in the processing unit 600, first, the thickness of the film made of organic material or the like formed on the upper surface of the substrate W is measured. For film thickness measurement, for example, an optical displacement sensor (not shown) is used. In the film thickness measurement, the measurement is performed while rotating the substrate W at, for example, 100 rpm. However, the time required for film thickness measurement can be shortened by rotating the substrate W at, for example, 1200 rpm. there is. Next, a chemical solution (for example, hydrofluoric acid (HF) and nitric acid (HNO ₃ ) mixed solution) is supplied to the upper surface of the substrate W to perform a predetermined chemical treatment (step ST01 in FIG. 5 ). At this time, the film thickness can be measured again with the chemical solution supplied, and it can be confirmed whether the difference from the measured value in the previous process is within a predetermined range. And, if it deviates from the above range, the user can be notified by, for example, issuing an alarm. After that, a rinsing solution such as pure water (DIW) is supplied to the substrate W to perform rinsing treatment (step ST02 in FIG. 5). Additionally, the rinse liquid is shaken off by rotating the substrate W at high speed, thereby drying the substrate W (step ST03 in FIG. 5). Thereafter, the thickness of the film formed on the upper surface of the substrate W is measured using the above-mentioned optical displacement sensor or the like to confirm whether the film has been appropriately removed by chemical treatment.

Among the above, the chemical treatment is performed by discharging the chemical liquid from the chemical liquid nozzle 52 onto the upper surface of the substrate W. In addition, the rinsing process includes the rinse liquid discharged from the rinse liquid nozzle 60 located on the upper surface side of the substrate W, and the rinse liquid discharged from the cleaning nozzle 105 located on the lower surface side of the substrate W. This is done by supplying them in an appropriate combination.

In addition, in the above-described medium film thickness measurement, particles removed from the substrate W may fly up by rotating the substrate W at high speed, and may attach to the substrate W again and become particles. Therefore, when measuring the film thickness while rotating the substrate W at high speed, the processing cup 511 is placed in an upper position where the upper end is above the substrate W, and the upper end of the processing cup 511 and the substrate It is preferable that particles flow outward in the radial direction of the substrate W in the space formed between W and are appropriately exhausted from the exhaust port 515 formed below the processing unit 600.

＜About details of substrate processing＞

Next, with reference to FIGS. 6 to 9, details of substrate processing (mainly from chemical treatment to dry processing) will be described. 6 to 9 are diagrams showing the sequence of substrate processing. 6 to 9, the chemical treatment is a process in which a chemical liquid is supplied to the substrate W from the chemical liquid nozzle 52. Additionally, the top surface rinsing process is a process in which rinse liquid is supplied to the upper surface of the substrate W from the rinse liquid nozzle 60. In addition, the double-sided rinsing process is a process in which rinse liquid is supplied to the upper and lower surfaces of the substrate W from the rinse liquid nozzle 60 and the cleaning nozzle 105. Additionally, the drying process is a process in which the substrate W is dried.

6 to 9, the lower surface rinse shows a state in which the rinse liquid is discharged from the cleaning nozzle 105 (ON) and a state in which the rinse liquid is not discharged (OFF). Additionally, the substrate rotation speed indicates the rotation speed of the substrate W. Additionally, the lower surface suction indicates a state in which suction is being performed inside the cleaning nozzle 105 (ON) and a state in which suction is not being performed (OFF). In addition, the lower center gas shows a state in which gas is blown out from the cleaning nozzle 105 (ON) and a state in which gas is not blown out (OFF). The gas blown out from the cleaning nozzle 105 flows from the radial inner side of the substrate W to the radial outer side when viewed from the top. In addition, the gas surrounding the lower surface shows a state in which gas is blown out from the blowout port 106 (ON) and a state in which gas is not blown out (OFF).

In the case shown in FIG. 6 as an example, first, during chemical treatment, the bottom rinse is OFF, the substrate rotation speed is 700 rpm, the bottom suction is OFF, the bottom center gas is ON, and the bottom peripheral gas is ON. In this case, by turning on the lower central gas and the lower peripheral gas, the substrate W is held by the Bernoulli chuck, and the chemical liquid discharged on the upper surface of the substrate W is suppressed from returning to the lower surface side of the substrate W. .

Next, during the upper surface rinsing process, the lower surface rinse is OFF, the substrate rotation speed is 700 rpm, the lower surface suction is OFF, the lower central gas is ON, and the lower surface peripheral gas is ON. In this case, the lower central body and the lower peripheral gas are turned on, so that the substrate W is held by the Bernoulli chuck, and the rinse liquid discharged on the upper surface of the substrate W is suppressed from returning to the lower surface side of the substrate W. do.

Next, during the double-sided rinsing process, the lower surface rinse is ON, the substrate rotation speed is 300 rpm, the lower surface suction is OFF, the lower surface central gas is ON, and the lower surface peripheral gas is ON. In this case, the substrate W is held by a Bernoulli chuck, and the rinse liquid and inert gas are simultaneously supplied from the cleaning nozzle 105 to form a gas-liquid mixture, and the gas-liquid mixture is supplied to the lower surface of the substrate W, thereby The cleaning effect on the lower surface of (W) is improved.

Next, during the upper surface rinsing process, the lower surface rinse is OFF, the substrate rotation speed is 300 rpm, the lower surface suction is ON, the lower central gas is OFF, and the lower surface peripheral gas is ON. Here, since the rinse liquid was discharged from the cleaning nozzle 105 in the previous double-sided rinsing process, the rinse liquid may remain inside the cleaning nozzle 105. Therefore, in this upper surface rinsing process, suction is performed inside the cleaning nozzle 105 to remove the rinse liquid remaining in the cleaning nozzle 105. At this time, the inert gas is blown out from the outlet 106, and the substrate W is held in the spin chuck 51 according to Bernoulli's principle (Bernoulli chuck).

When the substrate W is held by the Bernoulli chuck, the pressure in the space between the lower surface of the substrate W and the upper surface 102 of the plate 101 is preferably maintained constant, and the pressure in the space is preferably maintained constant. Suction in the cleaning nozzle 105, which can cause fluctuations in , is usually not desirable. However, in this embodiment, the Bernoulli chuck is held (in this embodiment, by an inert gas blown out from the outlet 106) and the inside of the cleaning nozzle 105 is sucked, thereby removing the substrate W with the Bernoulli chuck. Even in the case of maintenance, the rinse liquid remaining in the cleaning nozzle 105 is removed.

In addition, if the rinse liquid remaining in the cleaning nozzle 105 is only removed, there is no need to supply the rinse liquid to the upper surface of the substrate W, but by supplying the rinse liquid to the upper surface of the substrate W, the cleaning nozzle 105 ), it is possible to suppress particles, etc. from adhering to the upper surface of the substrate W while suction is being performed. Additionally, when the rinse liquid is supplied to the upper surface of the substrate W, the inert gas is blown out from the outlet 106, so that the rinse liquid supplied to the upper surface of the substrate W returns to the lower surface of the substrate W. Entry can be prevented.

Next, during the drying process, the bottom rinse is OFF, the substrate rotation speed is 1500 rpm, the bottom suction is ON, the bottom central gas is OFF, and the bottom peripheral gas is ON. In this case, as the substrate W rotates at high speed, particles, etc. attached to the substrate W can be removed. As the substrate W rotates at high speed, the pressure in the space between the lower surface of the substrate W and the upper surface 102 of the plate 101 decreases to negative pressure, and the rinse liquid remaining in the cleaning nozzle 105 It becomes easier to be sucked into this space. Therefore, it is effective to perform suction within the cleaning nozzle 105. However, if the suction is performed excessively, the pressure in the above space may decrease excessively, and there is a risk that the lower surface of the substrate W and the upper surface 102 of the plate 101 may come into contact. Therefore, it is necessary for the control unit 90 to control at least one of the rotation speed of the substrate W and the suction amount within the cleaning nozzle 105 in a range where the pressure in the space does not become smaller than a predetermined pressure. It becomes. At this time, the inert gas is blown out from the outlet 106, and the substrate W is held in the spin chuck 51 according to Bernoulli's principle (Bernoulli chuck).

In the case shown in FIG. 7 as an example, the chemical treatment, upper surface rinsing process, double-side rinsing process, and upper surface rinsing treatment after the double-side rinsing process are the same as the case shown in FIG. 6.

In the drying process after the upper surface rinsing process, the lower surface rinse is OFF, the substrate rotation speed is 0 rpm (i.e., non-rotating), the lower surface suction is OFF, the lower surface central gas is ON, and the lower surface peripheral gas is OFF.

In this case, since it is a process in which the substrate W does not rotate, when the pressure in the space between the lower surface of the substrate W and the upper surface 102 of the plate 101 decreases due to the rotation of the substrate W, does not exist. Therefore, there is no need to perform suction within the cleaning nozzle 105. However, suction may be performed within the cleaning nozzle 105.

In addition, in the drying process, inert gas is blown out from the cleaning nozzle 105 located in the center of the substrate W when viewed from the top, and no inert gas is blown out from the outlet 106. This causes the rinse liquid remaining on the lower surface of the substrate W or the upper surface 102 of the plate 101 to be pushed outward in the radial direction of the substrate W by the inert gas blown out from the cleaning nozzle 105. , to release the Bernoulli chuck of the substrate (W).

The substrate W held by the Bernoulli chuck can be considered to be prone to curvature in the central portion of the substrate W. Therefore, the rinse liquid remaining in the central part of the lower surface of the substrate W remains in contact with both sides in a narrow space between the lower surface of the substrate W and the upper surface 102 of the plate 101, and the cleaning nozzle 105 It is difficult to be pushed out even by the inert gas blown out from the. In addition, when the substrate W is held by the Bernoulli chuck, the pressure of the space between the lower surface of the substrate W and the upper surface 102 of the plate 101 is lower than the pressure of the space outside the substrate, so that the substrate The rinse liquid remaining on the lower surface of (W) or the upper surface 102 of the plate 101 is difficult to be pushed out even by the inert gas blown out from the cleaning nozzle 105 and the outlet 106.

Therefore, the blowing of the inert gas from the outlet 106 is stopped, the Bernoulli chuck of the substrate W is released, and the inert gas is supplied from the cleaning nozzle 105 to the substrate W in a state in which the curvature of the substrate W is relaxed. By flowing from the radial inner side to the radial outer side, the rinse liquid remaining in the center of the substrate W can be pushed out to the radial outer side of the substrate W.

In the case shown in FIG. 8 as an example, the chemical treatment, upper surface rinsing process, double-side rinsing process, and upper surface rinsing treatment after the double-side rinsing process are the same as the case shown in FIG. 6.

In addition, the drying process (first drying process) after the upper surface rinsing process is the same as the drying process shown in FIG. 6. In addition, the drying process after the drying process (second drying process) is the same as the drying process shown in FIG. 7. In addition, the last drying process (3rd drying process) is the same as the drying process shown in FIG. 6.

In this case, the liquid containing the processing liquid adhering to the substrate W after the previous process is removed by rotating the substrate W at high speed in the first drying process. Then, in the second drying process in which the substrate W is not rotated, the rinse liquid that tends to remain, especially in the central portion of the lower surface of the substrate W, is pushed out at least to the radial outer side of the substrate W. Additionally, in the third drying process, the substrate W is rotated at high speed again to remove the rinse liquid pushed out to the radial outside of the substrate W. As a result of the above, the liquid adhering to the substrate W can be removed more reliably. Additionally, the first drying treatment is not an essential process.

In Fig. 4, the rinse liquid supply pipe 109 and the gas supply pipe 107 are connected to the same cleaning nozzle 105, but each may be connected to a separate outlet (or nozzle). In addition, the outlet to which the rinse liquid supply pipe 109 is connected and the outlet to which the gas supply pipe 107 is connected are also arranged at positions opposite to the lower surface of the substrate W.

FIG. 9 is a diagram showing the sequence in the case where the rinse liquid supply pipe 109 and the gas supply pipe 107 are connected to separate outlets as described above. In the case where the example is shown in FIG. 9, chemical liquid treatment, top surface The rinsing process and double-sided rinsing process are the same as the case shown in FIG. 6.

Next, during the upper surface rinsing process, the lower surface rinse is OFF, the substrate rotation speed is 300 rpm, the lower surface suction is ON, the lower central gas is ON, and the lower surface peripheral gas is ON. In this case, since the rinse liquid supply pipe 109 and the gas supply pipe 107 are connected to separate outlets, lower surface suction and lower surface central gas can be turned on at the same time. By doing so, the inert gas is taken out from the cleaning nozzle 105 and the rinse liquid supplied to the upper surface of the substrate W is suppressed from returning to the lower surface of the substrate W, while suction is performed within the cleaning nozzle 105, Rinse solution remaining in the cleaning nozzle 105 can be removed.

Next, during the drying process, the bottom rinse is OFF, the substrate rotation speed is 1500 rpm, the bottom suction is ON, the bottom central gas is ON, and the bottom peripheral gas is ON. In this case, since the rinse liquid supply pipe 109 and the gas supply pipe 107 are connected to separate outlets, lower surface suction and lower surface central gas can be turned on at the same time. By doing so, suction can be performed within the cleaning nozzle 105 while suppressing an excessive decrease in pressure in the space between the lower surface of the substrate W and the upper surface 102 of the plate 101. In other words, the degree of freedom in the amount of suction can be increased.

<About the effects produced by the embodiment described above>

Next, examples of effects generated by the embodiment described above are shown. In addition, in the following description, the effect is described based on the specific configuration shown as an example in the embodiment described above, but it may be replaced with another specific configuration shown as an example in the specification of the present application to the extent that the same effect occurs. . That is, in the following, for convenience, only one of the corresponding specific configurations may be described as a representative, but the representatively described specific configuration may be replaced with another corresponding specific configuration.

According to the embodiment described above, in the substrate cleaning method, a cleaning liquid (rinse liquid) is supplied to the lower surface of the substrate W, which is the surface opposite to the holding surface holding the substrate W, through the cleaning nozzle 105. do. Then, after the process of supplying the cleaning liquid (rinse liquid) to the lower surface of the substrate W, the inside of the cleaning nozzle 105 is sucked while the substrate W is held by the Bernoulli chuck. Here, the holding surface corresponds to, for example, the upper surface 102 of the plate 101. The cleaning liquid is supplied through the cleaning nozzle 105 by controlling the control valve 113 in the rinse liquid supply pipe 109 by the control unit 90. In addition, suction in the cleaning nozzle 105 is performed by controlling the control valve 111 in the gas supply pipe 107 and the control valve 112 in the gas supply pipe 108 by the control unit 90. all.

According to this configuration, when the substrate W is held by the Bernoulli chuck, it is possible to suppress the cleaning liquid (rinse liquid) remaining in the cleaning nozzle 105 located on the lower surface of the substrate W. Therefore, even if, for example, there is a drying process after the process in which the cleaning liquid is discharged from the cleaning nozzle 105, problems occurring due to the cleaning liquid remaining in the cleaning nozzle 105 can be suppressed.

Additionally, if there are no special restrictions, the order in which each process is performed can be changed.

In addition, the same effect can be achieved even when other configurations exemplified in the specification of the present application are appropriately added to the above configuration, that is, even when other configurations in the specification of the present application that are not mentioned as the above configuration are appropriately added.

Additionally, according to the embodiment described above, in the substrate cleaning method, a chemical solution is supplied to the upper surface of the substrate W before the step of supplying the cleaning liquid (rinse liquid) to the lower surface of the substrate W. Then, during the process of supplying the chemical solution and the process of supplying the cleaning solution, gas is supplied to the lower surface of the substrate W through a gas nozzle while the substrate W is held by the Bernoulli chuck. Here, the gas nozzle corresponds to the cleaning nozzle 105 or the like in this embodiment. Additionally, the gas supplied through the cleaning nozzle 105 flows from the radial inner side of the substrate W to the radial outer side when viewed from the top. According to this configuration, when the lower center gas is turned on, the chemical liquid and rinse liquid discharged on the upper surface of the substrate W are suppressed from returning to the lower surface side of the substrate W.

In addition, according to the embodiment described above, the gas nozzle is a nozzle common to the cleaning nozzle 105. According to this configuration, the rinse liquid and the inert gas are simultaneously supplied from the cleaning nozzle 105 to form a gas-liquid mixture, and the gas-liquid mixture is supplied to the lower surface of the substrate W, thereby providing a cleaning effect on the lower surface of the substrate W. improves. Additionally, compared to a case where a nozzle for supplying rinse liquid to the lower surface of the substrate W and a nozzle for supplying an inert gas to the lower surface of the substrate W are installed separately, the device configuration can be reduced.

Additionally, according to the embodiment described above, in the substrate cleaning method, a cleaning liquid (rinse liquid) is supplied to the upper surface of the substrate W during the process of suctioning the inside of the cleaning nozzle 105. According to this configuration, by supplying a cleaning liquid (rinse liquid) to the upper surface of the substrate W, it is possible to suppress adhesion of particles, etc. to the upper surface of the substrate W while suction is performed in the cleaning nozzle 105.

In addition, according to the embodiment described above, in the substrate cleaning method, the cleaning liquid (rinse liquid) is supplied to the upper surface of the substrate W during the process of supplying the cleaning liquid (rinse liquid) to the lower surface of the substrate W. . According to this configuration, particles, etc. that adhered to the previous process can also be removed from the upper surface of the substrate W.

Additionally, according to the embodiment described above, in the substrate cleaning method, the substrate W is dried after the process of suctioning the inside of the cleaning nozzle 105. According to this configuration, the cleaning liquid (rinse liquid) remaining in the cleaning nozzle 105 in the previous process is converted into negative pressure in the space between the lower surface of the substrate W and the upper surface 102 of the plate 101 during the drying process. It can be prevented from being sucked up and causing problems.

In addition, according to the embodiment described above, suction within the cleaning nozzle 105 is also performed in the process of drying the substrate W. In the process of drying the substrate W, by controlling at least one of the rotation speed of the substrate W and the amount of suction within the cleaning nozzle 105, the space between the substrate W and the upper surface 102 is controlled. The pressure is adjusted within a predetermined range. According to this configuration, the higher the rotation speed of the substrate W and the greater the amount of suction in the cleaning nozzle 105, the lower the pressure in the space between the lower surface of the substrate W and the upper surface 102 of the plate 101. Therefore, by controlling both, the drying process can be performed in a range where the lower surface of the substrate W and the upper surface 102 of the plate 101 do not contact due to the actions of both.

In addition, according to the embodiment described above, the process of drying the substrate W is performed without rotating the substrate W in a state in which the substrate W is not held by the Bernoulli chuck. Then, in the substrate cleaning method, gas is supplied to the lower surface of the substrate W during the process of drying the substrate W. Here, the supplied gas flows from the radial inner side of the substrate W to the radial outer side when viewed from the top. According to this configuration, the blowing of the inert gas from the blowing port 106 is stopped and the inert gas is blown from the cleaning nozzle 105 in a state in which the Bernoulli chuck of the substrate W is released, thereby removing the rinse remaining in the central portion of the substrate W. The liquid can be pushed outward in the radial direction of the substrate (W).

In addition, according to the embodiment described above, the process of drying the substrate W is performed multiple times. In addition, the process of drying the substrate W is performed without rotating the substrate W in a state in which the substrate W is not held by the Bernoulli chuck, and then in the state in which the substrate W is held in the Bernoulli chuck. , is performed by rotating the substrate W. And, in the substrate cleaning method, gas is supplied to the lower surface of the substrate W during the process of drying the substrate W without rotating it. Here, the supplied gas flows from the radial inner side of the substrate W to the radial outer side when viewed from the top. According to this configuration, the rinse liquid pushed out in the radial direction of the substrate W in the drying process in which the substrate W does not rotate can be reliably removed in the subsequent drying process in which the substrate W rotates.

<About modifications of the embodiment described above>

In the embodiment described above, the material, material, size, shape, relative arrangement relationship, or implementation conditions of each component may also be described, but these are examples in all aspects and are not limiting. It is assumed that

Accordingly, numerous modifications, examples of which are not shown, and equivalents are contemplated within the scope of the technology disclosed in this specification. For example, this includes cases where at least one component is modified, added, or omitted.

Additionally, in the embodiments described above, when material names, etc. are described without special designation, it is assumed that the materials contain other additives, for example, alloys, etc., unless a contradiction arises. .

1: substrate processing device 16: bottom
20: outer edge 50: processing room
50A: Bulkhead 50B: Opening
50C: Shutter 51: Spin Chuck
52: Chemical liquid nozzle 54: Chemical liquid supply pipe
56, 62, 111, 112, 113: Adjustment valve 60: Rinse liquid nozzle
61, 109: Rinse fluid supply pipe 90: Control unit
91: CPU 92: ROM
93: RAM 94: recording device
94P: Processing Program 95: Bus Line
96: input unit 97: display unit
98: communication unit 101: plate
102: upper surface 103: fixing pin
104, 106: outlet 105: cleaning nozzle
107, 108: gas supply pipe 152: chemical arm
152A, 160A: Rotation drive source 152B, 160B: Arm portion
160: Rinse liquid arm 180: Chamber
192: Rotation shaft 193: Rotation drive unit
511: Disposal cup 513: Drain port
515: exhaust port 600: processing unit
601: load port 602: indexer robot
603: Center robot 604: Board placement unit

Claims (10)

A substrate cleaning method for cleaning a substrate held by a Bernoulli chuck, comprising:
A process of supplying a cleaning liquid to the lower surface of the substrate, which is the surface opposite to the holding surface holding the substrate, through a cleaning nozzle opposed to the central portion of the lower surface of the substrate;
After the step of supplying the cleaning liquid, the inside of the cleaning nozzle facing the lower surface of the substrate is sucked while the substrate is held by the Bernoulli effect by the gas sprayed from the outlet facing the peripheral portion of the lower surface of the substrate. The process and
After the step of suctioning the inside of the cleaning nozzle, a step of drying the substrate is provided.
Substrate cleaning method. In claim 1,
A substrate cleaning method further comprising a step of supplying the cleaning liquid to an upper surface of the substrate during the step of suctioning the inside of the cleaning nozzle. In claim 1 or claim 2,
A substrate cleaning method further comprising supplying the cleaning liquid to an upper surface of the substrate during the process of supplying the cleaning liquid to a lower surface of the substrate. In claim 1,
Suction within the cleaning nozzle is also performed in the process of drying the substrate,
In the process of drying the substrate, the pressure in the space between the substrate and the holding surface is adjusted within a predetermined range by controlling at least one of the rotation speed of the substrate and the amount of suction in the cleaning nozzle. Substrate cleaning method. A substrate cleaning method for cleaning a substrate held by a Bernoulli chuck, comprising:
A process of supplying a cleaning liquid through a cleaning nozzle to the lower surface of the substrate, which is the surface opposite to the holding surface holding the substrate;
After the step of supplying the cleaning liquid, a step of suctioning the inside of the cleaning nozzle while the substrate is held by a Bernoulli chuck;
After the step of suctioning the inside of the cleaning nozzle, a step of drying the substrate is provided,
The process of drying the substrate is performed without rotating the substrate in a state where the substrate is not held by a Bernoulli chuck,
During the process of drying the substrate, it is further provided with a process of supplying gas to the lower surface of the substrate,
A substrate cleaning method, wherein the supplied gas flows from a radial inside to a radial outside of the substrate when viewed in plan. A substrate cleaning method for cleaning a substrate held by a Bernoulli chuck, comprising:
A process of supplying a cleaning liquid through a cleaning nozzle to the lower surface of the substrate, which is the surface opposite to the holding surface holding the substrate;
After the step of supplying the cleaning liquid, a step of suctioning the inside of the cleaning nozzle while the substrate is held by a Bernoulli chuck;
After the step of suctioning the inside of the cleaning nozzle, a step of drying the substrate is provided,
The process of drying the substrate is performed multiple times,
The process of drying the substrate is performed without rotating the substrate while the substrate is not held by the Bernoulli chuck, and then by rotating the substrate while the substrate is held by the Bernoulli chuck,
During the process of drying the substrate without rotating it, a process of supplying gas to the lower surface of the substrate is further provided,
A substrate cleaning method, wherein the supplied gas flows from a radial inside to a radial outside of the substrate when viewed in plan. A substrate cleaning device for cleaning a substrate held by a Bernoulli chuck, comprising:
means for supplying a cleaning liquid to the lower surface of the substrate, which is the surface opposite to the holding surface holding the substrate, through a cleaning nozzle opposed to the lower surface of the substrate;
After the cleaning liquid is supplied, the inside of the cleaning nozzle facing the lower surface of the substrate is sucked in a state in which the substrate is held by the Bernoulli effect caused by the gas sprayed from the outlet facing the peripheral portion of the lower surface of the substrate. have the means,
The cleaning nozzle supplies gas through the cleaning nozzle to the lower surface of the substrate while the substrate is held by a Bernoulli chuck during the process of supplying the cleaning liquid to the lower surface of the substrate.
Substrate cleaning device. delete delete delete

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