JP7265390B2 - SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Google Patents

Description

The present invention relates to a substrate processing apparatus, a substrate processing method, and a semiconductor manufacturing method.

For example, the substrate processing apparatus is preferably used for manufacturing semiconductor substrates. The generation of watermarks during the manufacture of semiconductor substrates has become a problem. Since watermarks are generated unevenly on the substrate, they adversely affect the substrate properties. For this reason, in order to suppress the generation of watermarks, it has been studied to discharge a low-humidity gas when IPA is supplied as an organic solvent for drying (see, for example, Patent Document 1). In the substrate processing apparatus of Patent Document 1, after supplying the rinse liquid as the processing liquid, the supply of IPA is started while the low-humidity gas is being supplied, thereby suppressing the generation of watermarks.

JP 2009-218563 A

In the substrate processing apparatus of Patent Document 1, after the rinse liquid is supplied as the processing liquid, the rinse liquid nozzle is retracted to the retracted position and the IPA discharge nozzle is moved directly above the substrate. However, when the discharge of the rinse liquid and the discharge of the organic solvent are switched in this way, if the flow rate of the low-humidity gas is low, the upper surface of the substrate is exposed, and watermarks may occur on the substrate. Further, if the low-humidity gas is continuously supplied for a long period of time, the cost of substrate processing will increase.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a substrate processing apparatus, a substrate processing method, and a semiconductor manufacturing method capable of suppressing the generation of watermarks when discharging a rinse liquid and an organic solvent. to do.

According to one aspect of the present invention, a substrate processing apparatus includes a substrate holding section, a rinse liquid supply section, an organic solvent supply section, and a control section. The substrate holding part rotatably holds the substrate. The rinse liquid supply unit has a rinse liquid nozzle that obliquely discharges the rinse liquid onto the upper surface of the substrate. The organic solvent supply section has an organic solvent nozzle for discharging an organic solvent onto the upper surface of the substrate. The control section controls the rinse liquid supply section and the organic solvent supply section. The control unit causes the rinse liquid nozzle to discharge the rinse liquid to the center of the upper surface of the substrate so that the rinse liquid covers the upper surface of the substrate, and the rinse liquid discharged from the rinse liquid nozzle is discharged . By reducing the discharge amount, the arrival position of the rinse liquid on the substrate is moved outward from the center of the upper surface of the substrate, and the arrival position of the rinse liquid is moved outward from the center of the substrate. The organic solvent nozzle is caused to start discharging the organic solvent to the center of the upper surface of the substrate , and then the supply of the rinsing liquid is stopped so that the organic solvent covers the upper surface of the substrate. The organic solvent is discharged from a solvent nozzle onto the center of the upper surface of the substrate .
In one embodiment, the rinse liquid nozzle is fixed so that the arrival position of the rinse liquid moves outward from the center of the upper surface of the substrate by reducing the discharge amount of the rinse liquid.
In one embodiment, the rinse liquid nozzle is fixed to a chamber in which the substrate holder is provided.

In one embodiment, the control unit controls the rinse liquid supply unit so that the rinse liquid covers the center of the upper surface of the substrate when moving the arrival position of the rinse liquid from the rinse liquid nozzle. .

In one embodiment, the rinse liquid nozzle ejects the rinse liquid so that the rinse liquid that has reached the arrival position of the substrate has a component in a direction opposite to the rotation direction of the substrate.

In one embodiment, the rinse liquid nozzle ejects the rinse liquid without moving from the start of ejection of the rinse liquid to the stop of ejection of the rinse liquid.

In one embodiment, the rinse liquid nozzle moves between the start of discharging the rinse liquid and the stop of discharging the rinse liquid.

In one embodiment, the organic solvent nozzle ejects the organic solvent without moving from the start of ejection of the organic solvent to the stop of ejection of the organic solvent.

In one embodiment, the controller controls the substrate holder to continue rotating the substrate after stopping the discharge of the organic solvent from the organic solvent nozzle.

In one embodiment, the substrate processing apparatus further includes a shielding member having a shielding plate facing the upper surface of the substrate.

In one embodiment, the shielding member has the organic solvent nozzle.

In one embodiment, the shielding member has a gas nozzle for supplying gas toward the upper surface of the substrate.

According to another aspect of the present invention, a substrate processing method includes the steps of: rotating the substrate while holding the substrate; discharging a rinse liquid obliquely from a rinse liquid nozzle onto the upper surface of the substrate; and discharging an organic solvent from an organic solvent nozzle onto the upper surface. in the step of discharging the rinsing liquid and the step of discharging the organic solvent, causing the rinsing liquid nozzle to discharge the rinsing liquid to the center of the upper surface of the substrate so that the rinsing liquid covers the upper surface of the substrate; By reducing the discharge amount of the rinsing liquid discharged from the rinsing liquid nozzle, a reaching position where the rinsing liquid reaches the substrate is moved outward from the center of the upper surface of the substrate, and the reaching position of the rinsing liquid is reduced . is moved outward from the center of the substrate, the organic solvent nozzle is caused to start discharging the organic solvent to the center of the upper surface of the substrate. The organic solvent is discharged from the organic solvent nozzle onto the center of the upper surface of the substrate so as to cover the upper surface of the substrate.

In one embodiment, in the step of rotating the substrate, the substrate is hydrophobized.

In one embodiment, the substrate processing method further includes the step of chemically treating the substrate before discharging the rinse liquid.

According to the present invention, it is possible to suppress the generation of watermarks when the rinsing liquid and the organic solvent are discharged.

It is a schematic diagram of the substrate processing apparatus of this embodiment. It is a flow chart for explaining a substrate processing method of this embodiment. (a) to (d) are schematic diagrams for explaining the flow of the substrate processing method of the present embodiment. (a) to (d) are schematic diagrams for explaining the flow of the substrate processing method of the present embodiment. It is a schematic diagram of the substrate processing apparatus of this embodiment. It is a flow chart for explaining a substrate processing method of this embodiment. (a) to (c) are schematic diagrams for explaining the flow of the substrate processing method of the present embodiment. (a) to (c) are schematic diagrams for explaining the flow of the substrate processing method of the present embodiment. (a) to (c) are schematic diagrams for explaining the flow of the substrate processing method of the present embodiment. (a) and (b) are schematic diagrams showing the movement of the reaching position of the rinse liquid in the substrate processing apparatus of the present embodiment. It is a schematic diagram of the substrate processing apparatus of this embodiment. (a) to (d) are schematic diagrams for explaining the flow of the substrate processing method of the present embodiment. It is a schematic diagram of the substrate processing apparatus of this embodiment.

Embodiments of a substrate processing apparatus, a substrate processing method, and a semiconductor manufacturing method according to the present invention will be described below with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated. In addition, in this specification, in order to facilitate understanding of the invention, the X direction, Y direction, and Z direction that are orthogonal to each other are sometimes described. Typically, the X and Y directions are parallel to the horizontal direction and the Z direction is parallel to the vertical direction.

A substrate processing apparatus 100 of the present embodiment will be described with reference to FIG. FIG. 1 is a schematic diagram of a substrate processing apparatus 100 of this embodiment.

The substrate processing apparatus 100 processes substrates W. FIG. The substrate processing apparatus 100 processes the substrate W such that the substrate W is subjected to at least one of etching, surface treatment, characterization, treatment film formation, removal of at least a portion of the film, and cleaning.

The substrate W is, for example, a semiconductor wafer, a liquid crystal display device substrate, a plasma display substrate, a field emission display (FED) substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, or a photomask. substrates, ceramic substrates and substrates for solar cells. For example, the substrate W is substantially disc-shaped. Here, the substrate processing apparatus 100 processes substrates W one by one.

The substrate processing apparatus 100 includes a chamber 110 , a substrate holding section 120 , a rinse liquid supply section 130 and an organic solvent supply section 140 . The chamber 110 accommodates the substrate W. FIG. The substrate holding part 120 holds the substrate W. As shown in FIG. The rinse liquid supply unit 130 supplies the substrate W with the rinse liquid. The organic solvent supply unit 140 supplies the substrate W with an organic solvent.

Chamber 110 is generally box-shaped with an internal space. The chamber 110 accommodates the substrate W. FIG. Here, the substrate processing apparatus 100 is of a single substrate type that processes substrates W one by one, and the substrates W are accommodated in the chamber 110 one by one. A substrate W is accommodated within the chamber 110 and processed within the chamber 110 . Chamber 110 accommodates at least part of each of substrate holding section 120 , rinse liquid supply section 130 , and organic solvent supply section 140 .

The substrate holding part 120 holds the substrate W. As shown in FIG. The substrate holding part 120 horizontally holds the substrate W so that the upper surface Wa of the substrate W faces upward and the back surface (lower surface) Wb of the substrate W faces vertically downward. Further, the substrate holding part 120 rotates the substrate W while holding the substrate W. As shown in FIG.

For example, the substrate holding part 120 may be of a clamping type that clamps the edge of the substrate W. As shown in FIG. Alternatively, the substrate holding part 120 may have any mechanism for holding the substrate W from the back surface Wb. For example, substrate holder 120 may be of a vacuum type. In this case, the substrate holding part 120 horizontally holds the substrate W by sucking the central portion of the back surface Wb of the substrate W, which is the non-device forming surface, onto the upper surface. Alternatively, the substrate holding part 120 may combine a clamping type and a vacuum type in which a plurality of chuck pins are brought into contact with the peripheral edge surface of the substrate W. FIG.

For example, substrate holder 120 includes spin base 121 , chuck member 122 , shaft 123 and electric motor 124 . The chuck member 122 is provided on the spin base 121 . The chuck member 122 chucks the substrate W. As shown in FIG. Typically, the spin base 121 is provided with a plurality of chuck members 122 .

Shaft 123 is a hollow shaft. The shaft 123 extends vertically along the rotation axis AX. A spin base 121 is coupled to the upper end of the shaft 123 . The back surface of the substrate W contacts the spin base 121 and the substrate W is placed above the spin base 121 .

The spin base 121 is disc-shaped and supports the substrate W horizontally. Shaft 123 extends downward from the central portion of spin base 121 . The electric motor 124 gives rotational force to the shaft 123 . The electric motor 124 rotates the shaft 123 in the rotation direction R to rotate the substrate W and the spin base 121 about the rotation axis AX. Here, the direction of rotation R is counterclockwise.

The rinse liquid supply unit 130 supplies the rinse liquid to the upper surface Wa of the substrate W. As shown in FIG. The chemical solution, impurities, etc. adhering to the upper surface Wa of the substrate W can be washed away by the rinsing process using the rinsing liquid. The rinsing liquid supplied from the rinsing liquid supply unit 130 includes deionized water (DIW), carbonated water, electrolytic ion water, ozone water, ammonia water, hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm), Alternatively, it may contain either reduced water (hydrogen water).

The rinse liquid supply unit 130 includes a rinse liquid nozzle 132 , a supply pipe 134 and a valve 136 . The nozzle 132 faces the upper surface Wa of the substrate W and discharges the rinse liquid toward the upper surface Wa of the substrate W. As shown in FIG. Supply tube 134 is coupled to nozzle 132 . Nozzle 132 is provided at the tip of supply pipe 134 . A rinse liquid is supplied to the supply pipe 134 from a supply source. A valve 136 is provided on the supply tube 134 . Valve 136 opens and closes the flow path in supply tube 134 . In this specification, the rinse liquid nozzle 132 may be simply referred to as the nozzle 132 .

The organic solvent supply unit 140 supplies an organic solvent to the upper surface Wa of the substrate W. As shown in FIG. By the organic solvent treatment using the organic solvent, the rinse liquid on the upper surface Wa of the substrate W is replaced with the organic solvent. Typically, the volatility of the organic solvent is higher than the volatility of the rinse liquid.

The organic solvent supplied from the organic solvent supply unit 140 may include isopropyl alcohol (IPA). Alternatively, the organic solvent may include ethanol, acetone, propylene glycol monoethyl ether (PGEE), or propylene glycol monomethyl ether acetate (PGMEA).

Organic solvent supply unit 140 includes organic solvent nozzle 142 , supply pipe 144 , and valve 146 . The nozzle 142 faces the upper surface Wa of the substrate W and ejects the organic solvent toward the upper surface Wa of the substrate W. As shown in FIG. Supply tube 144 is coupled to nozzle 142 . Nozzle 142 is provided at the tip of supply pipe 144 . An organic solvent is supplied to the supply pipe 144 from a supply source. A valve 146 is provided on the supply tube 144 . Valve 146 opens and closes the flow path in supply tube 144 . In this specification, the organic solvent nozzle 142 may be simply referred to as the nozzle 142 .

The organic solvent supply section 140 further includes a nozzle moving section 148 . The nozzle moving part 148 moves the nozzle 142 between the ejection position and the retracted position. The nozzle 142 is positioned above the substrate W when the nozzle 142 is in the ejection position. The nozzle 142 ejects the organic solvent toward the upper surface Wa of the substrate W when the nozzle 142 is at the ejection position. When the nozzle 142 is at the retracted position, the nozzle 142 is located radially outside the substrate W relative to the substrate.

The nozzle moving part 148 includes an arm 148a, a rotating shaft 148b, and a nozzle moving mechanism 148c. The arm 148a extends substantially horizontally. A nozzle 142 is attached to the tip of the arm 148a. Arm 148a is coupled to pivot shaft 148b. The rotating shaft 148b extends substantially vertically. The nozzle moving mechanism 148c rotates the rotating shaft 148b around a substantially vertical rotating axis to rotate the arm 148a along a substantially horizontal plane. As a result, the nozzle 142 moves along a substantially horizontal plane. For example, the nozzle moving mechanism 148c includes an arm swing motor that rotates the rotation shaft 148b around the rotation axis. The arm swing motor is, for example, a servomotor. Further, the nozzle moving mechanism 148c raises and lowers the arm 148a by raising and lowering the rotating shaft 148b along the substantially vertical direction. As a result, the nozzle 142 moves substantially vertically. For example, the nozzle moving mechanism 148c includes a ball screw mechanism and an arm elevating motor that applies driving force to the ball screw mechanism. The arm elevating motor is, for example, a servomotor.

Substrate processing apparatus 100 further includes cup 180 . The cup 180 collects the liquid scattered from the substrate W. FIG. The cup 180 can be lifted vertically upward to the side of the substrate W. As shown in FIG. Alternatively, the cup 180 may descend vertically downward from the side of the substrate W. FIG.

The substrate processing apparatus 100 further includes a control device 101 . The control device 101 controls various operations of the substrate processing apparatus 100 .

Control device 101 further includes control unit 102 and storage unit 104 . Control unit 102 includes a processor. A processor has a central processing unit (Central Processing Unit: CPU), for example. Alternatively, the processor may comprise a general purpose computing machine. For example, the controller 102 controls the substrate holder 120 , the rinse liquid supplier 130 , the organic solvent supplier 140 and/or the cup 180 . In one example, controller 102 controls electric motor 124 , valve 136 , valve 146 , nozzle moving mechanism 148 c and/or cup 180 .

Storage unit 104 stores data and computer programs. Storage unit 104 includes a main storage device and an auxiliary storage device. The main storage device is, for example, a semiconductor memory. Auxiliary storage devices are, for example, semiconductor memories and/or hard disk drives. Storage unit 104 may include removable media. The control unit 102 executes a computer program stored in the storage unit 104 to perform substrate processing operations.

Note that the storage unit 104 stores a computer program having a predetermined procedure. The substrate processing apparatus 100 operates according to procedures defined in a computer program.

In the substrate processing apparatus 100 of this embodiment, the upper surface Wa of the substrate W is covered with the rinse liquid discharged from the nozzle 132 . Thereby, the upper surface Wa of the substrate W is rinsed. In this case, the reaching position from the nozzle 132 is preferably the center of the upper surface Wa of the substrate W. FIG. Thereby, even if the flow rate of the rinse liquid from the nozzle 132 is relatively small, the upper surface Wa of the substrate W can be covered with the rinse liquid.

Further, in the substrate processing apparatus 100 of the present embodiment, the arrival position of the rinse liquid from the nozzle 132 on the upper surface Wa of the substrate W is moved, and the discharge of the organic solvent from the nozzle 142 is started. As a result, the organic solvent can be discharged to a position distant from the arrival position of the rinse liquid, and the occurrence of problems due to splashing of the rinse liquid and the organic solvent can be suppressed. Further, in the substrate processing apparatus 100 of this embodiment, the upper surface Wa of the substrate W is covered with the organic solvent discharged from the nozzle 142 . As a result, the rinse liquid covering the upper surface Wa of the substrate W is replaced with the organic solvent. By replacing the rinse liquid covering the upper surface Wa of the substrate W with an organic solvent, the upper surface Wa of the substrate W can be preferably dried.

According to the substrate processing apparatus 100 of the present embodiment, it is possible to prevent the upper surface Wa of the substrate W from being exposed between the rinsing process and the organic solvent process while performing the rinsing process and the organic solvent process with a simple configuration. Furthermore, in the substrate processing apparatus 100 of the present embodiment, it is possible to suppress the splash caused by discharging the rinse liquid and the organic solvent to the same position.

The substrate processing apparatus 100 of this embodiment is suitably used for processing a semiconductor substrate provided with a semiconductor. Typically, a semiconductor substrate has a conductive layer and an insulating layer laminated over a substrate. The substrate processing apparatus 100 is preferably used for cleaning and/or processing (e.g., etching, property change, etc.) of conductive layers and/or insulating layers during the manufacture of semiconductor substrates.

Water or an aqueous solution is preferably used as the rinsing liquid. In this case, if the upper surface Wa of the substrate W is hydrophobized, the flow rate of the rinsing liquid on the upper surface Wa of the substrate W is faster than the flow rate of the organic solvent on the upper surface Wa of the substrate W, and the organic If the timing of discharging the solvent is delayed, at least a portion of the upper surface Wa of the substrate W may be exposed without being covered with any liquid. However, according to the substrate processing method of the present embodiment, since the rinse liquid is being discharged from the nozzle 132 when starting to discharge the organic solvent from the nozzle 142, the exposure of the upper surface Wa of the substrate W is suppressed. can. Thus, the substrate processing method of this embodiment is suitably applied to the processing of the hydrophobic substrate W. FIG. However, the substrate processing method of the present embodiment may be applied to the processing of hydrophilic substrates W as well.

Hereinafter, the flow of the substrate processing method of this embodiment will be described with reference to FIGS. 1 and 2. FIG. FIG. 2 is a flowchart for explaining the substrate processing method of this embodiment.

In step S102, the rinse liquid supply unit 130 supplies the rinse liquid to the upper surface Wa of the substrate W. As shown in FIG. Here, the rinse liquid is discharged onto the upper surface Wa of the substrate W from the nozzle 132 of the rinse liquid supply unit 130 . The entire upper surface Wa of the substrate W is covered with a rinsing liquid, and the upper surface Wa is rinsed.

The substrate W is housed in the chamber 110 and held by the substrate holder 120 . The rinse liquid supply unit 130 supplies the rinse liquid to the substrate W while the substrate W is held by the substrate holding unit 120 and rotated at a predetermined rotational speed. At this time, the rinse liquid supplied by the rinse liquid supply unit 130 spreads over the upper surface Wa of the substrate W to cover the entire upper surface Wa of the substrate W. FIG.

For example, the nozzles 132 may be oriented obliquely with respect to the top surface Wa of the substrate W, as shown in FIG. In this case, nozzle 132 may be fixed to chamber 110 . Further, the nozzle 132 may discharge the rinse liquid obliquely to the substrate W from above the upper surface Wa of the substrate W. FIG. Alternatively, the nozzle 132 may vertically face the upper surface Wa of the substrate W, and the nozzle 132 may discharge the rinse liquid vertically to the substrate W from above the upper surface Wa of the substrate W.

For example, the rinse liquid discharged from the nozzle 132 flies in the atmosphere inside the chamber 110 and reaches the center of the upper surface Wa of the substrate W. As shown in FIG. For example, the rinse liquid may reach the center of the substrate W. FIG. Alternatively, the rinse liquid may reach the vicinity of the center of the substrate W. FIG.

In step S104, the position where the rinse liquid from the nozzle 132 of the rinse liquid supply unit 130 reaches the substrate W is moved. For example, the arrival position of the rinse liquid moves from the center of the substrate W toward the edge of the substrate W. FIG.

For example, when the rinse liquid is discharged obliquely from the nozzle 132 , the arrival position at which the rinse liquid reaches the substrate W can be moved by reducing the flow rate of the rinse liquid discharged from the nozzle 132 . Alternatively, by moving the position of the nozzle 132, the arrival position at which the rinse liquid reaches the substrate W can be moved.

Along with the movement of the arrival position of the rinse liquid, the flow rate (discharge amount) of the rinse liquid discharged from the nozzle 132 may be changed. For example, the flow rate of the rinse liquid from the nozzle 132 may be decreased as the arrival position of the rinse liquid is moved. However, the flow rate of the rinse liquid is preferably set so that at least the center of the upper surface Wa of the substrate W is covered with the rinse liquid even after the arrival position of the rinse liquid has moved.

Alternatively, the arrival position at which the rinse liquid reaches the upper surface Wa of the substrate W may be moved by moving the position of the nozzle 132 . For example, the position where the rinse liquid reaches the substrate W may be moved by moving the position of the nozzle 132 toward the outer side of the substrate W in the radial direction. Alternatively, when the rinse liquid is discharged obliquely from the nozzle 132, the arrival position at which the rinse liquid reaches the substrate W may be moved by moving the position of the nozzle 132 downward.

In step S<b>106 , the organic solvent supply unit 140 supplies the organic solvent to the upper surface Wa of the substrate W while the rinse liquid from the nozzle 132 of the rinse liquid supply unit 130 is discharged onto the upper surface Wa of the substrate W. At this time, the organic solvent is discharged onto the upper surface Wa of the substrate W from the nozzle 142 of the organic solvent supply unit 140 .

The nozzle 142 vertically faces the upper surface Wa of the substrate W, and the nozzle 142 may discharge the organic solvent in the vertical direction to the substrate W from above the upper surface Wa of the substrate W. Alternatively, the nozzle 142 may be directed obliquely with respect to the upper surface Wa of the substrate W, and the nozzle 142 may discharge the organic solvent obliquely from above the upper surface Wa of the substrate W toward the upper surface Wa of the substrate W. .

Note that the discharge of the organic solvent from the nozzle 142 in S106 may be started immediately after the movement of the arrival position of the rinse liquid from the nozzle 132 in S104. Alternatively, the ejection of the organic solvent from the nozzles 142 may be started in S106 after a predetermined period of time has passed since the arrival position of the rinse liquid from the nozzles 132 started to move in S104.

In step S108, the discharge of the rinse liquid from the nozzle 132 is stopped while the discharge of the organic solvent from the nozzle 142 is continued. Note that the flow rate of the organic solvent from the nozzle 142 may be changed even when the discharge of the organic solvent is continued. For example, the flow rate of organic solvent from nozzle 142 may be increased.

According to the substrate processing method of this embodiment, after the nozzle 132 discharges the rinse liquid from a position capable of covering the entire upper surface Wa of the substrate W, before the nozzle 142 starts discharging the organic solvent, The arrival position of the rinse liquid is moved to another position, and the rinse liquid and the organic solvent are discharged from nozzles 132 and 142, respectively. In this way, since the rinse liquid and the organic solvent are simultaneously discharged before stopping the discharge of the rinse liquid, the occurrence of watermarks can be suppressed. Also, the rinse liquid from the nozzle 132 and the organic solvent from the nozzle 142 can cover the entire upper surface Wa of the substrate W, respectively. Therefore, the entire upper surface Wa of the substrate W can be treated with a simple structure and a small amount of rinsing liquid and organic solvent.

When the organic solvent and the rinse liquid are discharged at the same time, it is preferable that the arrival position of the organic solvent is different from the arrival position of the rinse liquid. In this case, it is possible to suppress the occurrence of watermarks that occur when the rinsing liquid and the organic solvent are discharged at the same time.

If the rinsing liquid and the organic solvent reach the same landing position at the same time and a splash occurs, droplets of the rinsing liquid and the organic solvent may be generated and adhere to the cup or chamber. In this case, watermarks may be generated on the substrate W when droplets adhering to the cup or chamber adhere to the substrate W during subsequent substrate processing. In addition, the rinse liquid and the organic solvent may become mist in the chamber due to the splash. In this case, watermarks may occur when the misted component adheres to the substrate W during subsequent substrate processing. Further, when the splash occurs, the liquid covering the upper surface Wa of the substrate W splashes up, and if the upper surface Wa of the substrate W is momentarily exposed, the upper surface Wa of the substrate W is contaminated and watermarks are generated. There is

Therefore, when the organic solvent and the rinse liquid are discharged at the same time, the arrival position of the organic solvent is preferably different from the arrival position of the rinse liquid. As a result, it is possible to suppress the occurrence of watermarks that occur when the rinsing liquid and the organic solvent are discharged at the same time.

When the rinse liquid from the nozzle 132 and the organic solvent from the nozzle 142 reach the center of the upper surface Wa of the substrate W, even if the respective flow rates of the rinse liquid and the organic solvent are relatively small, the rinse liquid and the organic solvent can cover the entire upper surface Wa of the substrate W. However, when the organic solvent from the nozzle 142 is set to reach the center of the substrate W when the organic solvent from the nozzle 142 is discharged together with the rinse liquid from the nozzle 132, the timing of the movement of the rinse liquid from the nozzle 132 And/or it is preferable that the arrival position of the rinsing liquid from the nozzle 132 during the rinsing process is slightly away from the center of the substrate W in consideration of the deviation of the start timing of ejection of the organic solvent from the nozzle 142 .

Next, the flow of the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 1 to 3. FIG. FIG. 3 is a schematic diagram for explaining the substrate processing method of the substrate processing apparatus 100. FIG.

As shown in FIG. 3A, the nozzle 132 discharges the rinse liquid onto the substrate W. As shown in FIG. The upper surface Wa of the substrate W is rinsed with a rinse liquid.

Here, the nozzle 132 is arranged so as to obliquely face the upper surface Wa of the substrate W, and the rinse liquid discharged from the nozzle 132 impinges on the upper surface Wa of the substrate W obliquely. When the rinsing liquid is discharged from the nozzle 132 at a relatively high flow rate, the rinsing liquid advances from the nozzle 132 toward the upper surface Wa of the substrate W in a straight line. For example, the flow rate of the rinse liquid is 500 mL/sec or more and 5000 mL/sec or less.

For example, the diameter of the substrate W is 40 mm or more and 400 mm or less. Moreover, the thickness of the substrate W is 0.3 mm or more and 2 mm or less.

The substrate holder 120 rotates the substrate W while holding it. The rotation speed of the substrate W is 100 rpm or more and 3000 rpm or less. The substrate W rotates through FIGS. 3(a) to 3(d).

The nozzle 132 discharges the rinse liquid to the center of the substrate W. FIG. As a result, the rinse liquid reaches the center of the upper surface Wa of the substrate W and flows from the center to cover the entire upper surface Wa of the substrate W. As shown in FIG. Typically, on the upper surface Wa of the substrate W, the thickness of the rinsing liquid at the reaching position is greater than the thickness of the rinsing liquid at other regions.

The reaching position of the nozzle 132 may be the center of the upper surface Wa of the substrate W, but may not be the center of the upper surface Wa of the substrate W. The nozzle 132 may discharge the rinse liquid near the center of the substrate W. FIG. In one example, the nozzle 132 ejects the rinsing liquid to a position distant from the center of the substrate W by 5 mm or more and 30 mm or less. Although the details will be described later, the rinse liquid is preferably discharged so as to have a component in the direction opposite to the rotation direction of the substrate W. FIG.

As shown in FIG. 3B, the position at which the rinse liquid from the nozzle 132 reaches the substrate W is moved. The arrival position of the rinse liquid from the nozzle 132 moves from the center of the substrate W toward the edge of the substrate W. FIG. At this time, the flow rate of the rinse liquid from the nozzle 132 is such that the entire upper surface Wa of the substrate W can be covered with the rinse liquid.

Here, by changing the direction of the nozzle 132, the arrival position of the rinse liquid from the nozzle 132 is moved. For example, the direction of the nozzle 132 is changed so that the angle formed by the direction of the nozzle 132 and the vertical direction becomes smaller.

As shown in FIG. 3C, after the position where the rinse liquid from the nozzle 132 reaches the substrate W moves from the center toward the edge of the substrate W, the organic solvent is applied from the nozzle 142 to the upper surface Wa of the substrate W. Dispense. The movement distance of the reaching position of the rinse liquid is, for example, 5 mm or more and 30 mm or less. For example, the movement distance is 2% or more and 20% or less of the diameter of the substrate W.

For example, the flow rate of the organic solvent from the nozzle 142 is less than the flow rate of the rinse liquid from the nozzle 132 in FIG. 3(a). Typically, the flow rate of the organic solvent from nozzle 142 is 100 mL/sec or more and 1000 mL/sec or less.

As shown in FIG. 3D, while continuing to discharge the organic solvent from the nozzle 142 onto the upper surface Wa of the substrate W, the discharge of the rinse liquid from the nozzle 132 is stopped. The flow rate of the organic solvent from the nozzle 142 is such that the organic solvent can cover the entire upper surface Wa of the substrate W. FIG.

After discharging the organic solvent for a predetermined period, the discharge of the organic solvent is stopped. Furthermore, it is preferable to dry the organic solvent on the upper surface Wa of the substrate W by continuing to rotate the substrate W even after the discharge of the organic solvent is stopped.

According to the present embodiment, the rinse liquid from the nozzle 132 is discharged singly to a position covering the entire upper surface Wa of the substrate W, and then the arrival position of the rinse liquid is moved to disperse the organic solvent on the substrate W. It is discharged to the upper surface Wa. Therefore, the entire upper surface Wa of the substrate W can be covered with the rinsing liquid from the nozzle 132 and the organic solvent from the nozzle 142 .

Further, according to the present embodiment, after the rinse liquid is discharged alone to the position covering the entire upper surface Wa of the substrate W, when the organic solvent is discharged onto the upper surface Wa of the substrate W, the rinse liquid reaches The position has moved to a position different from the arrival position of the organic solvent. Therefore, when the organic solvent is discharged, the arrival position of the organic solvent is different from the arrival position of the rinsing liquid. Therefore, even if the rinsing liquid and the organic solvent are discharged onto the upper surface Wa of the substrate W at the same time, a problem caused by the splash occurs. can be suppressed.

Furthermore, according to this embodiment, the rotation speed of the substrate W does not necessarily have to be changed. Therefore, the substrates W can be processed with the rinsing liquid and the organic solvent without lowering the processing throughput of the substrates W. FIG.

In FIG. 3, the flow rate of the rinse liquid is not changed before and after the arrival position of the rinse liquid is moved, but the present embodiment is not limited to this. The flow rate of the rinse liquid may be changed before and after the arrival position of the rinse liquid is moved.

Next, the flow of the substrate processing method of this embodiment will be described with reference to FIGS. 1 to 4. FIG. 4A to 4D are schematic diagrams for explaining the substrate processing method of this embodiment. 4A and 4D of FIGS. 4A to 4D are the same as FIGS. 3A and 3D, so redundancy is omitted. Duplicate descriptions are omitted to avoid duplication.

As shown in FIG. 4A, the rinse liquid is discharged onto the upper surface Wa of the substrate W from the nozzle 132 . Here, the nozzle 132 discharges the rinse liquid onto the upper surface Wa of the substrate W from an oblique direction.

As shown in FIG. 4B, the arrival position of the rinse liquid from the nozzle 132 is moved, and the flow rate of the rinse liquid is decreased. However, even in this case, the rinse liquid is discharged so as to cover the center of the upper surface Wa of the substrate W. As shown in FIG. Further, the flow rate of the rinse liquid is preferably such that the rinse liquid covers the entire upper surface Wa of the substrate W. FIG.

As shown in FIG. 4C, the organic solvent is discharged onto the upper surface Wa of the substrate W from the nozzle 142 while the flow rate of the rinse liquid from the nozzle 132 is reduced. Here, the flow rate of the organic solvent is preferably such that the entire upper surface Wa of the substrate W can be covered.

As shown in FIG. 4D, the supply of the rinsing liquid is stopped while the discharge of the organic solvent from the nozzle 142 is continued. Thereby, the organic solvent covers the entire upper surface Wa of the substrate W. As shown in FIG. The flow rate of the organic solvent from the nozzle 142 may be increased from before the supply of the rinse liquid is stopped to after the supply of the rinse liquid is stopped.

According to this embodiment, when the organic solvent is discharged from the nozzle 142, the arrival position of the rinse liquid is away from the center of the substrate W and the flow rate of the rinse liquid is reduced. Therefore, even if the organic solvent is discharged from the nozzle 142, it is possible to suppress the occurrence of watermarks due to the splash caused by the simultaneous discharge of the organic solvent and the rinse liquid.

Although the flow rate of the rinse liquid from the nozzle 132 is reduced before discharging the organic solvent from the nozzle 142 in FIG. 4, the present embodiment is not limited to this. The arrival position of the rinse liquid may be moved without changing the flow rate of the rinse liquid from the nozzle 132, and the discharge of the organic solvent from the nozzle 142 may be started to increase the flow rate of the organic solvent. However, since the flow rate of the rinse liquid during the rinse process is typically greater than the flow rate of the organic solvent during the organic solvent process, the flow rate of the rinse liquid can be changed relatively large.

Note that it is preferable to treat the substrate W with a chemical solution before treating it with the rinsing liquid and the organic solvent in this embodiment. Moreover, it is preferable to dry the upper surface Wa of the substrate W after the treatment with the organic solvent.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIG. FIG. 5 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 of FIG. 5 has the same configuration as the substrate processing apparatus 100 described above with reference to FIG. and redundant descriptions are omitted to avoid redundancy. The substrate processing apparatus 100 of this embodiment further includes a chemical liquid supply section 150 , a shielding member 160 and a gas supply section 170 in addition to the chamber 110 , the substrate holding section 120 , the rinse liquid supply section 130 and the organic solvent supply section 140 .

The chemical solution supply unit 150 supplies the chemical solution to the upper surface Wa of the substrate W. As shown in FIG. The substrate W can be processed with the chemical solution. For example, the chemical solution subjects the substrate W to at least one of etching, surface treatment, characterization, treatment film formation, removal of at least a portion of the film, and cleaning.

For example, the chemical liquid contains hydrofluoric acid (hydrogen fluoride water: HF). Alternatively, the chemical solution may be sulfuric acid, acetic acid, nitric acid, hydrochloric acid, citric acid, buffered hydrofluoric acid (BHF), dilute hydrofluoric acid (DHF), ammonia water, dilute ammonia water, hydrogen peroxide water, organic alkali (e.g., TMAH: tetramethylammonium hydroxide, etc.), a surfactant, and a corrosion inhibitor. Also, the chemical solution may be a mixed solution obtained by mixing the above solutions. For example, examples of chemical liquids in which these are mixed include SPM (sulfuric acid-hydrogen peroxide solution mixture), SC1 (ammonia-hydrogen peroxide solution mixture), SC2 (hydrochloric acid-hydrogen peroxide solution mixture), and the like.

The chemical liquid supply unit 150 includes a chemical liquid nozzle 152 , a supply pipe 154 and a valve 156 . The nozzle 152 faces the upper surface Wa of the substrate W and ejects the chemical liquid toward the upper surface Wa of the substrate W. As shown in FIG. Supply tube 154 is coupled to nozzle 152 . Nozzle 152 is provided at the tip of supply pipe 154 . A chemical solution is supplied to the supply pipe 154 from a supply source. A valve 156 is provided on the supply tube 154 . Valve 156 opens and closes the flow path in supply tube 154 . In this specification, the chemical liquid nozzle 152 may be simply referred to as the nozzle 152 .

The chemical liquid supply unit 150 further includes a nozzle moving unit 158 . A nozzle moving unit 158 moves the nozzle 152 between the ejection position and the retracted position. The nozzle 152 is located above the substrate W when the nozzle 152 is in the ejection position. The nozzle 152 ejects the chemical liquid toward the upper surface Wa of the substrate W when the nozzle 152 is at the ejection position. When the nozzle 152 is at the retracted position, the nozzle 152 is located radially outside the substrate W relative to it.

The nozzle moving part 158 includes an arm 158a, a rotating shaft 158b, and a nozzle moving mechanism 158c. The arm 158a extends substantially horizontally. A nozzle 152 is attached to the tip of the arm 158a. Arm 158a is coupled to pivot shaft 158b. The rotating shaft 158b extends substantially vertically. The nozzle moving mechanism 158c rotates the rotating shaft 158b around a substantially vertical rotating axis to rotate the arm 158a along a substantially horizontal plane. As a result, the nozzle 152 moves along a substantially horizontal plane. For example, the nozzle moving mechanism 158c includes an arm swing motor that rotates the rotation shaft 158b around the rotation axis. The arm swing motor is, for example, a servomotor. Further, the nozzle moving mechanism 158c raises and lowers the arm 158a by raising and lowering the rotating shaft 158b along the substantially vertical direction. As a result, the nozzle 152 moves substantially vertically. For example, the nozzle moving mechanism 158c includes a ball screw mechanism and an arm elevating motor that applies driving force to the ball screw mechanism. The arm elevating motor is, for example, a servomotor.

The shielding member 160 is positioned above the chuck member 122 . The shielding member 160 includes a shielding plate 162 , a support shaft 164 and a nozzle 166 .

The shielding plate 162 is, for example, substantially disc-shaped. The diameter of the shield plate 162 is substantially the same as the diameter of the substrate W, for example. However, the diameter of the shield plate 162 may be slightly smaller than or slightly larger than the diameter of the substrate W. The shielding plate 162 is arranged such that the lower surface of the shielding plate 162 is substantially horizontal. Further, the shielding plate 162 is arranged such that the central axis of the shielding plate 162 is positioned on the rotation axis AX of the substrate holder 120 . The lower surface of the shielding plate 162 faces the upper surface Wa of the substrate W held by the chuck member 122 . The shielding plate 162 is horizontally connected to the lower end of the support shaft 164 . The nozzle 166 supplies fluid to the upper surface Wa of the substrate W. As shown in FIG.

The shielding member 160 may further include a unit mover 168 . The unit moving part 168 raises or lowers the shield plate 162 with respect to the substrate W between the approach position and the retracted position. When the shielding plate 162 is in the close position, the shielding plate 162 is lowered to approach the upper surface of the substrate W with a predetermined gap. At the close position, the shielding plate 162 covers the surface of the substrate W to shield the substrate W from above. When the shielding plate 162 is at the retracted position, the shielding plate 162 is positioned above the close position. When the shielding plate 162 changes from the close position to the retracted position, the shielding plate 162 rises and separates from the substrate W. As shown in FIG. In FIG. 5, the shield plate 162 is located at the retracted position. For example, the unit moving section 168 includes a ball screw mechanism and an elevating motor that provides driving force to the ball screw mechanism. The lift motor is, for example, a servomotor.

The proximity positions of the shield plate 162 may include a first proximity position and a second proximity position. When the shielding plate 162 is at the first proximity position, the shielding plate 162 covers the upper surface Wa of the substrate W to shield the substrate W from above. Further, when the shielding plate 162 is at the second proximity position, the shielding plate 162 is closer to the top surface Wa of the substrate W than at the first proximity position and covers the top surface Wa of the substrate W to shield the substrate W from above.

Gas supply section 170 includes a gas nozzle 172 , a supply pipe 174 and a valve 176 . The nozzle 172 faces the upper surface Wa of the substrate W and ejects gas toward the upper surface Wa of the substrate W. As shown in FIG. Supply tube 174 is coupled to nozzle 172 . Nozzle 172 is provided at the tip of supply pipe 174 . Gas is supplied to the supply pipe 174 from a supply source. For example, the gas is an inert gas. Typically the gas comprises nitrogen gas. A valve 176 is provided on the supply tube 174 . Valve 176 opens and closes the flow path in supply tube 174 . In this specification, the gas nozzle 172 may be simply referred to as the nozzle 172 .

Here, the nozzle 142 of the organic solvent supply section 140 and the nozzle 172 of the gas supply section 170 are provided as the nozzle 166 of the shielding member 160 . Therefore, shielding member 160 discharges the organic solvent from nozzle 142 . Also, the shielding member 160 discharges gas from the nozzle 172 .

Hereinafter, the flow of the substrate processing method of this embodiment will be described with reference to FIGS. 1, 5 and 6. FIG. FIG. 6 is a flowchart for explaining the substrate processing method of this embodiment. Note that steps S102 to S108 in FIG. 6 are the same as steps S102 to S108 described above with reference to FIG. 2, and overlapping descriptions are omitted to avoid redundancy.

The substrate W is loaded into the chamber 110 in step S100a. After that, the substrate W is attached so as to be held by the substrate holder 120 . Specifically, the substrate W is placed on and attached to the spin base 121 so that the upper surface Wa faces upward. The substrate W is held by the substrate holder 120 with the back surface Wb of the substrate W in contact with the upper surface of the spin base 121 .

The electric motor 124 starts rotating the substrate W in step S100b. At this time, the cup 180 rises to the side of the substrate W. As shown in FIG.

In step S101, the valve 156 is opened, and the discharge of the chemical liquid from the nozzle 152 of the chemical liquid supply unit 150 onto the upper surface Wa of the substrate W is started. The chemical solution supplied to the upper surface Wa of the substrate W spreads over the entire upper surface Wa of the substrate W due to centrifugal force. Thereby, the substrate W is processed with the chemical solution. At this time, the nozzle 152 of the chemical liquid supply unit 150 has moved from the retracted position to the discharge position.

In step S102, the valve 136 is opened to start discharging the rinse liquid from the nozzle 132 of the rinse liquid supply unit 130 onto the upper surface Wa of the substrate W. As shown in FIG. The rinse liquid supplied to the upper surface Wa of the substrate W spreads over the entire upper surface Wa of the substrate W due to centrifugal force. Thereby, the substrate W is processed with the rinsing liquid. At this time, the nozzle 152 of the chemical liquid supply unit 150 has moved from the discharge position to the retracted position.

In step S104, the arrival position of the rinse liquid from the nozzle 132 to the substrate W is moved. For example, the arrival position of the rinse liquid moves from the center of the substrate W toward the edge of the substrate W. FIG.

In step S106, the valve 146 is opened while the discharge of the rinse liquid is maintained, and the discharge of the organic solvent from the nozzle 142 of the organic solvent supply unit 140 onto the upper surface Wa of the substrate W is started. At this time, the shielding plate 162 has moved from the retracted position to the close position. For example, shield plate 162 moves to the first proximal position.

In step S108, the valve 146 remains open, and the organic solvent continues to be discharged from the nozzle 142 of the organic solvent supply unit 140 onto the upper surface Wa of the substrate W. As shown in FIG. The organic solvent supplied to the upper surface Wa of the substrate W spreads over the entire upper surface Wa of the substrate W due to centrifugal force. Thereby, the substrate W is treated with the organic solvent.

In step S110, the upper surface Wa of the substrate W is dried. At this time, the valve 146 is closed, and the discharge of the organic solvent from the nozzle 142 of the organic solvent supply unit 140 onto the upper surface Wa of the substrate W is stopped. Also, the gas is discharged from the nozzle 172 toward the upper surface Wa of the substrate W. As shown in FIG. At this time, the shield plate 162 may move from the first proximity position to the second proximity position.

In step S<b>112 , the substrate W is unloaded from the chamber 110 . At this time, the substrate W is removed from the substrate holder 120 . Specifically, the substrate W is detached from the spin base 121 .

As described above, the substrate W may be dried after being treated with the chemical solution, the rinse solution and the organic solvent. As described above, the substrate processing method of this embodiment is suitably used for the substrate W that has been subjected to hydrophobic treatment. For this reason, it is preferable to subject the upper surface Wa of the substrate W to a hydrophobic treatment in the chemical solution treatment. For example, it is preferable to use hydrofluoric acid as the chemical.

Next, the flow of the substrate processing method of this embodiment will be described with reference to FIGS. 5 to 9. FIG. 7 to 9 are schematic diagrams for explaining the substrate processing method of this embodiment.

First, as shown in FIG. 7A, the substrate W is loaded. The loaded substrate W is mounted on the substrate holder 120 . The substrate W may be loaded by a robot.

As shown in FIG. 7B, the substrate W is rotated by the substrate holder 120 . The rotation of the substrate W may be continued until the drying of the substrate W is completed.

As shown in FIG. 7C, the chemical liquid is discharged onto the upper surface Wa of the substrate W from the nozzle 152 . The chemical liquid covers the upper surface Wa of the substrate W. As shown in FIG. Thereby, the substrate W is treated with the chemical solution.

As shown in FIG. 8A, the rinse liquid is discharged onto the upper surface Wa of the substrate W from the nozzle 132 . Thereby, the substrate W is processed with the rinse liquid. The substrate W is cleaned with the rinsing liquid. The rinse liquid covers the upper surface Wa of the substrate W. As shown in FIG. At this time, the reaching position of the rinse liquid is the center of the upper surface Wa of the substrate W. As shown in FIG. However, the arrival position of the rinse liquid is not the center of the upper surface Wa of the substrate W, but substantially the center.

As shown in FIG. 8B, the arrival position of the rinse liquid discharged from the nozzle 132 onto the upper surface Wa of the substrate W moves from the center of the upper surface Wa of the substrate W toward the outside. For example, the arrival position of the rinse liquid moves from the center of the substrate W toward the outside while decreasing the flow rate of the rinse liquid discharged from the nozzle 132 .

As shown in FIG. 8C, the organic solvent is discharged onto the upper surface Wa of the substrate W from the nozzle 142 of the shielding member 160 while the position where the rinse liquid reaches has moved from the center of the substrate W toward the outside. At this time, the shield plate 162 has moved from the retracted position to the first proximity position.

The distance between the arrival position of the organic solvent from the nozzle 142 and the center of the upper surface Wa of the substrate W is shorter than the distance between the arrival position of the rinse liquid and the center of the upper surface Wa of the substrate W. FIG. Typically, the arrival position of the organic solvent from the nozzle 142 is approximately the center of the upper surface Wa of the substrate W. As shown in FIG.

As shown in FIG. 9A, the discharge of the organic solvent from the nozzle 142 is continued, while the discharge of the rinse liquid from the nozzle 132 is stopped. The upper surface Wa of the substrate W is covered with an organic solvent.

As shown in FIG. 9B, after the discharge of the organic solvent from the nozzle 142 is continued for a predetermined period, the discharge of the organic solvent from the nozzle 142 is stopped, and the gas is supplied from the nozzle 172 of the shielding member 160 to the substrate W. do. It should be noted that the substrate holder 120 continues to rotate the substrate W. FIG. Thereby, the upper surface Wa of the substrate W can be dried. It is preferable that the shielding plate 162 is lowered to the second proximity position of the substrate W when the shielding member 160 supplies the gas to the substrate W. As shown in FIG. Thereby, the upper surface Wa of the substrate W can be dried in a gas atmosphere.

As shown in FIG. 9C, the substrate W is removed from and removed from the substrate holder 120, and the substrate W is unloaded. The substrate W may be unloaded by a robot. The substrate W can be processed as described above.

Note that the rinse liquid supply unit 130 may obliquely supply the rinse liquid to the substrate W as described above. In this case, the rinse liquid is preferably discharged so as to have a component directed in the direction opposite to the rotation direction R of the substrate W. FIG.

1, 2, and 10, the change in the position where the rinse liquid reaches the substrate W in the substrate processing apparatus 100 of the present embodiment will be described below. FIG. 10A is a schematic perspective view showing the reaching position of the rinse liquid with respect to the substrate W before the reaching position of the rinse liquid is moved, and FIG. FIG. 11 is a schematic perspective view showing a position where the rinsing liquid reaches the substrate W later.

As shown in FIG. 10A, the nozzle 132 is arranged radially outside the upper surface Wa of the substrate W, and the nozzle 132 discharges the rinse liquid obliquely. The rinse liquid discharged from the nozzle 132 reaches the center of the upper surface Wa of the substrate W. As shown in FIG. Here, the rinse liquid reaches substantially the center of the upper surface Wa of the substrate W. As shown in FIG. At this time, the rinse liquid tends to advance along the traveling direction L. As shown in FIG.

On the other hand, the substrate W is rotating along the rotation direction R, and the rinse liquid is supplied to the substrate W rotating along the rotation direction R. Therefore, the rinsing liquid that has reached the arrival position receives a force along the rotation direction R. As shown in FIG.

FIG. 10(a) shows the traveling direction L of the rinsing liquid by separating it into a component La extending in the normal direction from the arrival position and a component Lb extending from the arrival position toward the center. Since the component Lb in the direction of travel L is opposite to the direction of rotation R, the rinse liquid that reaches the arrival position stays on the upper surface Wa of the substrate W for a relatively long time and spreads on the upper surface Wa of the substrate W. Covers the center O of Wa. After that, the rinse liquid spreads over the entire upper surface Wa of the substrate W to cover the entire upper surface Wa of the substrate W. As shown in FIG. In this way, the rinse liquid is discharged to the arrival position so as to have a component in the opposite direction to the rotation direction of the substrate W, so that even if the flow rate of the rinse liquid is relatively small, the rinse liquid is distributed to the center of the substrate W. O can be fully covered.

As shown in FIG. 10B, the arrival position of the rinse liquid from the nozzle 132 is from the center of the upper surface Wa of the substrate W to the outside before or at the same timing as the organic solvent is discharged from the nozzle 142. Moving. For example, by decreasing the flow rate of the rinse liquid, the arrival position of the rinse liquid moves from the center of the upper surface Wa of the substrate W toward the outside. However, at this time as well, the flow rate of the rinse liquid is preferably such that at least the center of the upper surface Wa of the substrate W can be covered.

In the substrate processing apparatus 100 shown in FIGS. 1 to 10, the rinse liquid supply unit 130 is arranged to supply the rinse liquid obliquely to the substrate W, but the present embodiment is limited to this. not. The rinse liquid supply unit 130 may supply the rinse liquid to the substrate W perpendicularly. Moreover, in the substrate processing apparatus 100 shown in FIGS. 1 to 10, the nozzle 132 of the rinse liquid supply unit 130 is fixed, but the present embodiment is not limited to this. Nozzle 132 may be movable.

A substrate processing apparatus 100 of this embodiment will be described with reference to FIG. FIG. 11 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. In the substrate processing apparatus 100 of FIG. 11, the rinsing liquid supply unit 130 further includes a nozzle moving unit 138, and the rinsing liquid from the nozzle 132 is discharged perpendicularly to the upper surface Wa of the substrate W. It has the same configuration as the substrate processing apparatus 100 described above with reference to FIG. 1, and redundant description is omitted to avoid redundancy.

Here, the nozzle 132 is oriented perpendicular to the upper surface Wa of the substrate W. As shown in FIG. The rinse liquid from the nozzle 132 is discharged perpendicularly to the upper surface Wa of the substrate W. As shown in FIG.

The rinse liquid supply section 130 further includes a nozzle moving section 138 . The nozzle moving part 138 moves the nozzle 132 between the ejection position and the retracted position. The nozzle 132 is positioned above the substrate W when the nozzle 132 is positioned at the ejection position. The nozzle 132 ejects the rinse liquid toward the upper surface Wa of the substrate W when the nozzle 132 is positioned at the ejection position. When the nozzle 132 is positioned at the retracted position, the nozzle 132 is positioned radially outward of the substrate W relative to the substrate.

Specifically, the nozzle moving section 138 includes an arm 138a, a rotating shaft 138b, and a nozzle moving mechanism 138c. The arm 138a extends substantially horizontally. A nozzle 132 is attached to the tip of the arm 138a. Arm 138a is coupled to pivot shaft 138b. The rotating shaft 138b extends substantially vertically. The nozzle moving mechanism 138c rotates the rotating shaft 138b around a substantially vertical rotating axis to rotate the arm 138a along a substantially horizontal plane. As a result, the nozzle 132 moves along a substantially horizontal plane. For example, the nozzle moving mechanism 138c includes an arm swing motor that rotates the rotation shaft 138b around the rotation axis. The arm swing motor is, for example, a servomotor. Further, the nozzle moving mechanism 138c raises and lowers the arm 138a by raising and lowering the rotating shaft 138b along the substantially vertical direction. As a result, the nozzle 132 moves substantially vertically. For example, the nozzle moving mechanism 138c includes a ball screw mechanism and an arm elevating motor that applies driving force to the ball screw mechanism. The arm elevating motor is, for example, a servomotor.

Next, the flow of the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 11 and 12. FIG. FIG. 12 is a schematic diagram for explaining the substrate processing method of the substrate processing apparatus 100 of this embodiment.

As shown in FIG. 12A, the nozzle 132 discharges the rinse liquid toward the upper surface Wa of the substrate W. As shown in FIG. Here, the rinse liquid discharged from the nozzle 132 reaches the center of the upper surface Wa of the substrate W. As shown in FIG. Thereby, the substrate W is processed with the rinsing liquid. Here, the nozzle 132 is positioned at the ejection position.

As shown in FIG. 12B, the nozzle 132 is moved while discharging the rinse liquid. Here, the rinse liquid discharged from the nozzle 132 moves from the center of the substrate W toward the outside. The nozzle 132 starts moving from the discharge position to the retracted position. At this time, the center of the upper surface Wa of the substrate W is covered with the rinse liquid.

As shown in FIG. 12C, while the nozzle 132 is discharging the rinsing liquid, the nozzle 142 starts discharging the organic solvent. The nozzle 142 moves from the retracted position to the ejection position. In this case, the distance between the arrival position of the organic solvent and the center of the substrate W is shorter than the distance between the arrival position of the rinse liquid and the center of the substrate W. FIG. Typically, the organic solvent discharged onto the upper surface Wa of the substrate W from the nozzle 142 reaches the center of the substrate W. As shown in FIG.

As shown in FIG. 12D, while continuing to discharge the organic solvent from the nozzle 142, the discharge of the rinsing liquid from the nozzle 132 is stopped. Here, the nozzle 132 moves from the ejection position to the retracted position. In this case, the upper surface Wa of the substrate W is covered with an organic solvent. After that, the discharge of the organic solvent from the nozzle 142 is continued for a predetermined period, and then the discharge of the organic solvent is stopped. Furthermore, the upper surface Wa of the substrate W may be dried after stopping the discharge of the organic solvent. Drying of the substrate W may be performed by continuing the rotation of the substrate W. FIG. Alternatively, the substrate W may be dried by further increasing the rotation speed of the substrate W. FIG. Furthermore, drying of the substrate W may be performed by supplying gas from the shielding member 160 shown in FIG.

As described above, according to the present embodiment, after the rinse liquid is supplied so as to cover the upper surface Wa of the substrate W, the nozzle 132 is moved to move the arrival position of the rinse liquid, and the organic solvent is applied to the substrate W. is discharged onto the upper surface Wa of the substrate W to cover the upper surface Wa of the substrate W. Therefore, it is possible to prevent the rinsing liquid from the nozzle 132 and the organic solvent from the nozzle 142 from being discharged at the same arrival position, and it is possible to suppress the occurrence of problems caused by the splash. Furthermore, according to the present embodiment, the rinse liquid discharged from the nozzle 132 covers the upper surface Wa of the substrate W by the movement of the nozzle 132, and covers at least a part of the upper surface Wa of the substrate W immediately before discharging the organic solvent. used for Therefore, it is possible to suppress the generation of watermarks when discharging the rinse liquid and the organic solvent with a simple configuration.

In the above description with reference to FIG. 12, the flow rate of the rinsing liquid from the nozzle 132 did not change during the period from when the nozzle 132 started to move to when the organic solvent started to be discharged from the nozzle 142. However, the present embodiment is not limited to this. The flow rate of the rinsing liquid from the nozzle 132 may decrease during the period from when the nozzle 132 starts to move to when the organic solvent starts to be discharged from the nozzle 142 .

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIG. The substrate processing apparatus 100 of this embodiment is different from the substrate processing apparatus 100 described above in that it includes a plurality of chambers 110 . However, overlapping descriptions are omitted for the purpose of avoiding redundant explanations.

FIG. 13 is a schematic plan view of the substrate processing apparatus 100. FIG. As shown in FIG. 13, the substrate processing apparatus 100 includes a component liquid cabinet 100A, a plurality of fluid boxes 100B, a plurality of chambers 110, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 101 . The control device 101 controls the load port LP, the indexer robot IR and the center robot CR. Control device 101 includes control unit 102 and storage unit 104 .

Each load port LP accommodates a plurality of substrates W in a stack. The indexer robot IR transports substrates W between the load port LP and the center robot CR. The center robot CR transports substrates W between the indexer robot IR and the chambers 110 . Each of the chambers 110 discharges a chemical liquid, a rinse liquid and/or an organic solvent onto the substrate W to process the substrate W. FIG. Each fluid box 100B houses a fluid device. The component liquid cabinet 100A accommodates chemical liquids, rinse liquids and/or organic solvents.

Specifically, the plurality of chambers 110 form a plurality of towers TW (four towers TW in FIG. 13) arranged to surround the center robot CR in plan view. Each tower TW includes a plurality of chambers 110 (three chambers 110 in FIG. 13) stacked one above the other. A plurality of fluid boxes 100B correspond to a plurality of towers TW, respectively. The chemical liquid, rinse liquid and/or organic solvent in the component liquid cabinet 100A are supplied to all the chambers 110 included in the tower TW corresponding to the fluid box 100B via one of the fluid boxes 100B.

The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above-described embodiments, and can be implemented in various aspects without departing from the gist of the present invention. Further, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above embodiments. For example, some components may be omitted from all components shown in the embodiments. Furthermore, components across different embodiments may be combined as appropriate. In order to make the drawings easier to understand, the drawings mainly show each component schematically. may be different. In addition, the material, shape, dimensions, etc. of each component shown in the above embodiment are examples and are not particularly limited, and various changes are possible without substantially departing from the effects of the present invention. be.

INDUSTRIAL APPLICABILITY The present invention is suitably used for substrate processing apparatuses, substrate processing methods, and semiconductor manufacturing methods.

REFERENCE SIGNS LIST 100 substrate processing apparatus 110 chamber 120 substrate holder 130 rinse liquid supply unit 140 organic solvent supply unit W substrate

Claims (15)

a substrate holder that rotatably holds the substrate;
a rinse liquid supply unit having a rinse liquid nozzle that obliquely discharges the rinse liquid onto the upper surface of the substrate;
an organic solvent supply unit having an organic solvent nozzle for discharging an organic solvent onto the upper surface of the substrate;
a control unit that controls the rinse liquid supply unit and the organic solvent supply unit;
The control unit
causing the rinse liquid nozzle to discharge the rinse liquid to the center of the upper surface of the substrate so that the rinse liquid covers the upper surface of the substrate;
moving a position where the rinse liquid reaches the substrate from the center to the outside of the upper surface of the substrate by reducing the discharge amount of the rinse liquid discharged from the rinse liquid nozzle ;
causing the organic solvent nozzle to start discharging the organic solvent to the center of the upper surface of the substrate in a state where the arrival position of the rinse liquid has moved outward from the center of the substrate ;
After that, the supply of the rinse solution is stopped,
A substrate processing apparatus, wherein the organic solvent is discharged from the organic solvent nozzle onto the center of the upper surface of the substrate so that the organic solvent covers the upper surface of the substrate. 2. The substrate processing according to claim 1, wherein said rinse liquid nozzle is fixed such that a reaching position of said rinse liquid moves outward from the center of the upper surface of said substrate by reducing the discharge amount of said rinse liquid. Device. 3. The substrate processing apparatus according to claim 2, wherein said rinse liquid nozzle is fixed to a chamber in which said substrate holder is provided. 2. From claim 1, wherein the control unit controls the rinse liquid supply unit so that the rinse liquid covers the center of the upper surface of the substrate when moving the arrival position of the rinse liquid from the rinse liquid nozzle. 4. The substrate processing apparatus according to any one of 3 . 5. Any one of claims 1 to 4, wherein the rinse liquid nozzle ejects the rinse liquid so that the rinse liquid that has reached the arrival position of the substrate has a component in a direction opposite to the rotation direction of the substrate. A substrate processing apparatus as described. 6. The substrate processing apparatus according to claim 1, wherein said rinse liquid nozzle ejects said rinse liquid without moving from when ejection of said rinse liquid is started until ejection of said rinse liquid is stopped. . 2. The substrate processing apparatus according to claim 1 , wherein said rinse liquid nozzle moves from when the rinse liquid discharge is started until when the rinse liquid discharge is stopped. 8. The substrate processing apparatus according to claim 1, wherein said organic solvent nozzle ejects said organic solvent without moving from the start of ejection of said organic solvent until the end of ejection of said organic solvent. . 9. The substrate according to any one of claims 1 to 8, wherein said controller controls said substrate holder so as to continue rotating said substrate after stopping the discharge of said organic solvent from said organic solvent nozzle. processing equipment. 10. The substrate processing apparatus according to claim 1, further comprising a shielding member having a shielding plate facing said upper surface of said substrate. 11. The substrate processing apparatus according to claim 10, wherein said shielding member has said organic solvent nozzle. 12. The substrate processing apparatus according to claim 10, wherein said shielding member has a gas nozzle for supplying gas toward said upper surface of said substrate. rotating the substrate while holding the substrate;
a step of obliquely discharging a rinse liquid from a rinse liquid nozzle onto the upper surface of the substrate;
discharging an organic solvent from an organic solvent nozzle onto the upper surface of the substrate;
In the step of discharging the rinse liquid and the step of discharging the organic solvent,
causing the rinse liquid nozzle to discharge the rinse liquid to the center of the upper surface of the substrate so that the rinse liquid covers the upper surface of the substrate;
moving a position where the rinse liquid reaches the substrate from the center to the outside of the upper surface of the substrate by reducing the discharge amount of the rinse liquid discharged from the rinse liquid nozzle ;
causing the organic solvent nozzle to start discharging the organic solvent to the center of the upper surface of the substrate in a state where the arrival position of the rinse liquid has moved outward from the center of the substrate ;
After that, the supply of the rinse solution is stopped,
A substrate processing method, wherein the organic solvent is discharged from the organic solvent nozzle onto the center of the upper surface of the substrate so that the organic solvent covers the upper surface of the substrate . 14. The substrate processing method according to claim 13, wherein in the step of rotating the substrate, the substrate is subjected to hydrophobic treatment. 14. The substrate processing method according to claim 13, further comprising the step of chemically treating said substrate before discharging said rinse liquid.

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