KR102649167B1 - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The substrate processing apparatus 1 includes a cylindrical guard 53A that catches liquid flying outward from the substrate W, a chamber 12 surrounding the guard 53A, and a chamber 12 within the chamber 12. A partition plate 81 divides the space around the guard 53A into upper and lower parts, and the gas inside the guard 53A and the gas below the partition plate 81 are separated by a partition plate 81 in the chamber 12. An exhaust duct is provided at the lower upstream end to suck in air and discharge it out of the chamber 12. The partition plate 81 includes an outer peripheral end 81o spaced inward from the inner peripheral surface 12i of the chamber 12 and an inner peripheral end surrounding the guard 53A. The guard elevating unit changes the shortest distance from the inner peripheral edge (inner peripheral surface 83i) of the partition plate 81 to the guard 53A by raising and lowering the guard 53A.

Description

Substrate processing apparatus and substrate processing method {SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD}

Cross-reference to related applications

This application claims priority based on Japanese Patent Application 2020-151658, filed on September 9, 2020, and Japanese Patent Application 2021-134271, filed on August 19, 2021, the entirety of this application The contents are hereby incorporated by reference.

The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate.

Substrates include, for example, semiconductor wafers, substrates for FPDs (Flat Panel Displays) such as liquid crystal displays and organic EL (electroluminescence) displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, and photomasks. This includes substrates for solar cells, ceramic substrates, and solar cell substrates.

In the manufacturing process of semiconductor devices, FPDs, etc., substrate processing equipment is used to process substrates such as semiconductor wafers and FPD glass substrates. The substrate processing device described in JP 2018-32728 A includes a spin chuck that rotates the substrate while holding it horizontally, a nozzle that discharges SPM (a mixture of sulfuric acid and hydrogen peroxide) toward the upper surface of the substrate held in the spin chuck, and a spin chuck. It is provided with a nozzle that discharges rinse liquid toward the upper surface of the substrate held in the chuck, a barrel-shaped guard that catches liquid flying outward from the substrate, and a chamber that accommodates the spin chuck, guard, etc.

The upper part of the guard surrounds the substrate when viewed from a plan view. The guard is disposed at one of a lower position where the top of the guard is located below the substrate, a liquid receiving position where the upper end of the guard is located above the substrate, and an upper position above the liquid receiving position. When supplying the SPM to the substrate, the guard is placed at an upper position where the upper end of the guard is sufficiently far away from the upper surface of the substrate. When washing SPM on a board with a rinse liquid, a guard is placed at a liquid receiving position where the vertical distance from the top surface of the board to the top of the guard is reduced.

When a processing liquid such as a chemical solution or a rinse liquid is discharged toward a rotating substrate, a mist of the processing liquid is generated above the substrate or around the substrate. If the generated chemical mist leaks out of the guard through the inside of the upper part of the guard, the leaked chemical mist or the atmosphere containing the leaked chemical liquid in the form of a mist (hereinafter collectively referred to as “chemical liquid atmosphere”) will enter the chamber. It may attach to the inside and change into particles. There are cases where the chemical liquid atmosphere flows toward the substrate and adheres to the substrate. When the substrate is taken out of the chamber or brought into the chamber, the chemical atmosphere may adhere to the substrate. These may cause contamination of the substrate.

In the substrate processing device described in JP 2018-32728 A, the guard is kept extremely tight when supplying SPM to the substrate in order to prevent the atmosphere containing chemical mist such as SPM from leaking out of the guard through the inside of the upper part of the guard. It is being raised to a high position. However, depending on the substrate processing apparatus, it may not be possible to place the guard at such a high position.

Therefore, one object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can reliably remove the leaked chemical mist even if the chemical mist leaks out of the guard through the inside of the upper part of the guard.

One embodiment of the present invention includes a substrate holding unit that holds a substrate horizontally, a substrate rotation unit that rotates the substrate held in the substrate holding unit around a vertical rotation axis passing through the center of the substrate, and , a chemical liquid nozzle that discharges a chemical liquid toward the substrate held in the substrate holding unit, an upper end surrounding the substrate held in the substrate holding unit when viewed in plan, and a cylinder extending obliquely upward toward the upper end. A chamber including a cylindrical guard including an inclined portion in the shape and receiving liquid that scatters outward from the substrate held in the substrate holding unit, and an inner peripheral surface surrounding the guard, and from the inner peripheral surface of the chamber. A partition plate including an outer peripheral end spaced to an inner room and an inner peripheral end surrounding the guard, dividing the space around the guard in the chamber into upper and lower parts, and lifting the guard from the inner peripheral end of the partition plate. a guard elevating unit that changes the shortest distance to the guard, and an upstream end disposed below the partition plate in the chamber, wherein the body inside the guard and the body below the partition plate are moved to the upstream end. A substrate processing apparatus is provided, including an exhaust duct that draws suction into the chamber and exhausts the chamber out of the chamber.

According to this configuration, a partition plate is arranged around the guard. The outer peripheral end of the partition plate is spaced away from the inner peripheral surface of the chamber toward the inner room, and the inner peripheral end of the partition plate surrounds the guard. When the guard lifting unit raises or lowers the guard, the shortest distance from the inner peripheral end of the partition plate to the guard increases or decreases. Thereby, the pressure loss in the path passing between the guard and the partition plate can be increased or decreased.

The exhaust duct draws the gas inside the guard and the gas below the partition plate into the interior of the exhaust duct from the upstream end of the exhaust duct. The gas above the guard passes downward inside the upper end of the guard and is drawn into the exhaust duct. The gas above the partition plate passes downward through at least one of the gap between the chamber and the partition plate and the gap between the guard and the partition plate, and is drawn into the exhaust duct.

When the guard lifting unit reduces the shortest distance from the inner peripheral end of the partition plate to the guard, the pressure loss in the path passing between the guard and the partition plate increases, and thus the flow rate of gas passing through the inside of the upper part of the guard increases. As a result, the amount of chemical mist leaking out of the guard through the inside of the upper part of the guard can be reduced.

When the guard lifting unit increases the shortest distance from the inner peripheral end of the partition plate to the guard, the pressure loss in the path passing between the guard and the partition plate is reduced, thereby increasing the flow rate of gas passing between the guard and the partition plate. Even if the chemical mist leaks out of the guard, the leaked mist passes downward through at least one of the gap between the chamber and the partition plate and the gap between the guard and the partition plate, and is sucked into the exhaust duct. Thereby, the leaked mist can be reliably removed.

Focusing on suctioning the atmosphere inside the guard is important to prevent chemical mist from leaking out of the guard. Focusing on suctioning the atmosphere above the guard and partition plate is important in removing the leaked chemical mist. Therefore, balancing the exhaust, that is, changing the location where the exhaust is mainly performed, is important in reducing contamination of the substrate and chamber.

By raising and lowering the guard and changing the shortest distance from the inner peripheral edge of the partition plate to the guard, the point where exhaust air is concentrated between the inside of the guard and the upper part of the guard and the partition plate can be changed. Therefore, by raising and lowering the guard as the processing of the substrate progresses, the atmosphere at the location where the chemical mist may be present can be sucked in, thereby reducing contamination of the substrate and the chamber.

In the above embodiment, at least one of the following features may be added to the substrate processing apparatus.

The substrate processing apparatus controls a rinse liquid nozzle that discharges a rinse liquid toward the substrate held in the substrate holding unit and the guard lifting unit, so that the chemical liquid on the substrate is discharged from the rinse liquid nozzle. and a control device that increases the shortest distance when the chemical liquid nozzle is discharging the chemical liquid.

According to this configuration, the chemical liquid on the substrate is replaced with a rinse liquid. If the chemical mist leaks outside the guard, the chemical atmosphere drifts above the guard and partition plate when the rinse liquid nozzle is discharging the rinse liquid. When the rinse liquid nozzle is discharging the rinse liquid, the shortest distance from the inner peripheral edge of the partition plate to the guard is greater than when the chemical liquid nozzle is discharging the chemical liquid. As a result, the chemical atmosphere drifting above the guard and partition plate can be drawn into at least one of the gap between the chamber and the partition plate and the gap between the guard and the partition plate.

Rinse liquid means a liquid other than a chemical liquid. A specific example of a rinse liquid is a water-containing liquid containing water as the main component. The water-containing liquid may be water such as pure water (deionized water: DIW (Deionized Water)). That is, the concentration of water in the water-containing liquid may be 100% or substantially 100%. If the concentration is low (for example, 10 to 100 ppm), the water-containing liquid may contain substances other than water. If there is no problem with the quality of the substrate even if the mist of the rinse liquid adheres to the chamber or the substrate, the rinse liquid may be a liquid other than a water-containing liquid. For example, an organic solvent (liquid) such as IPA (isopropyl alcohol) or HFE (hydrofluoroether) may be used as the rinse liquid.

The substrate processing apparatus has an inner peripheral surface and an outer peripheral surface surrounding the guard in a space below the partition plate in the chamber, and an opening at the inner peripheral surface and the outer peripheral surface, and allows gas discharged from the chamber through the exhaust duct. It is further provided with a cylindrical outer wall including a passing exhaust hole and an exhaust relay hole that is open at the inner and outer peripheral surfaces and through which gas moving from the outside of the outer peripheral surface to the inside of the inner peripheral surface passes.

According to this configuration, a cylindrical outer wall surrounds the guard on the lower side of the partition plate. The gas that has passed inside the upper end of the guard passes through the discharge hole in the cylindrical outer wall and the exhaust duct and is discharged out of the chamber. The gas that passes between the guard and the partition plate also passes through the discharge hole in the cylindrical outer wall and the exhaust duct and is discharged out of the chamber. Therefore, this gas is discharged out of the chamber without passing through the exhaust relay hole in the cylindrical outer wall.

On the other hand, the gas that has passed between the chamber and the partition plate passes through the exhaust relay hole in the cylindrical outer wall and moves from the outside of the cylindrical outer wall to the inside of the cylindrical outer wall. Afterwards, this gas passes through the discharge hole of the cylindrical outer wall and the exhaust duct and is discharged out of the chamber. Therefore, the gas around the cylindrical outer wall moves from the outside of the cylindrical outer wall to the inside of the cylindrical outer wall, and then moves from the inside of the cylindrical outer wall to the outside of the cylindrical outer wall.

In this way, the gas that has passed between the chamber and the partition plate passes through the exhaust relay hole of the cylindrical outer wall, and then passes through the discharge hole and the exhaust duct of the cylindrical outer wall, so that the gas that has flowed between the chamber and the partition plate The path through which the pressure loss is greater than the path through the inside of the upper part of the guard. Therefore, the flow rate of gas passing through the inside of the upper part of the guard and the flow rate of gas passing between the guard and the partition plate can be increased.

By increasing the flow rate of gas passing through the inside of the upper part of the guard, the chemical mist leaking out of the guard can be reduced. Additionally, even if the chemical mist leaks out of the guard, the leaked mist flows from the upper part of the guard around it. The inner peripheral end of the partition plate is disposed closer to the guard than the outer peripheral end of the partition plate. Therefore, by increasing the flow rate of gas passing between the guard and the partition plate, the leaked chemical mist can be more reliably removed.

The exhaust relay hole of the cylindrical outer wall is smaller than the exhaust hole of the cylindrical outer wall.

According to this configuration, the area of the exhaust relay hole in the cylindrical outer wall is smaller than the area of the exhaust hole in the cylindrical outer wall. Gas that passes inside the upper part of the guard and gas that passes between the guard and the partition plate does not pass through the exhaust relay hole, whereas gas that passes between the chamber and the partition plate passes through the exhaust relay hole, and then , passes through the discharge hole and exhaust duct. Therefore, the pressure loss in the path through which the gas introduced between the chamber and the partition plate passes is large. As a result, the flow rate of gas passing through the inside of the upper end of the guard and the flow rate of gas passing between the guard and the partition plate can be further increased.

The cylindrical outer wall includes a cylindrical body including an inner peripheral surface and an outer peripheral surface surrounding the guard in a space below the partition plate in the chamber, a through hole opening in the inner peripheral surface and an outer peripheral surface, and a portion of the through hole. It is held on the cylindrical body in a covered state, and includes a movable cover movable relative to the cylindrical body, wherein the exhaust relay hole is formed by the through hole of the cylindrical body and the movable cover, and the cylindrical body The opening degree changes depending on the position of the movable cover relative to the upper body.

According to this configuration, the exhaust relay hole through which the gas flowing from the outside of the cylindrical outer wall to the inside of the cylindrical outer wall passes is formed by a through hole penetrating the cylindrical body and a movable cover that covers a part of the through hole. When the movable cover is moved relative to the cylindrical body, the opening degree of the exhaust relay hole changes, and the pressure loss of the exhaust relay hole increases or decreases. Thereby, the balance of the exhaust can be changed. In other words, the balance of exhaust gas passing through the inside of the upper part of the guard, exhaust gas passing between the guard and the partition plate, and exhaust gas passing between the chamber and the partition plate can be changed.

The movable cover may be a slide cover that moves in parallel along the inner or outer peripheral surface of the cylindrical body, or may be an opening and closing cover that opens and closes around a horizontal or vertical straight line. When the movable cover is a slide cover, when the movable cover is moved relative to the cylindrical body, the area of the portion not covered by the movable cover in the through hole of the cylindrical body changes. When the movable cover is an open/close cover, when the movable cover is moved relative to the cylindrical body, the size of the gap between the cylindrical body and the movable cover changes. As a result, the opening degree of the exhaust relay hole changes, and the pressure loss of the exhaust relay hole increases or decreases.

The outer peripheral surface of the guard includes a cylindrical vertical portion having a vertical straight cross-section, and the partition plate includes a horizontal portion that divides the space around the guard in the chamber into upper and lower portions, and a horizontal portion extending from the horizontal portion. It includes a cylindrical vertical portion extending downward, and an inner circumferential surface of the vertical portion of the partition plate has a vertical straight cross-section and surrounds the vertical portion of the guard when viewed in plan, and the vertical portion of the guard When the guard is disposed at an upper processing position horizontally facing the inner peripheral surface of the vertical portion, the distance from the inner peripheral edge of the partition plate to the guard is between the vertical portion of the guard and the inner peripheral surface of the vertical portion. is the smallest in

According to this configuration, the horizontal portion of the partition plate divides the space around the guard in the chamber into upper and lower, and the vertical portion of the partition plate extends downward from the horizontal portion. The inner peripheral surface of the vertical portion surrounds the vertical portion of the outer peripheral surface of the guard when viewed in plan. When the guard is moved to the upper processing position, the vertical portion of the outer peripheral surface of the guard is disposed inside the vertical portion and horizontally faces the inner peripheral surface of the vertical portion.

When the guard is disposed at the upper processing position, the distance from the inner peripheral edge of the partition plate to the guard is the smallest between the vertical portion of the outer peripheral surface of the guard and the inner peripheral surface of the vertical portion. In other words, when the guard is placed at the upper processing position, the distance in the radial direction (direction perpendicular to the rotation axis of the substrate) from the inner peripheral surface of the vertical portion to the vertical portion of the outer peripheral surface of the guard is the distance from the inner peripheral edge of the partition plate to the vertical portion of the outer peripheral surface of the guard. It is equivalent to the shortest distance to . Therefore, the pressure loss in the path passing between the guard and the partition plate mainly depends on the radial distance from the inner peripheral surface of the vertical portion to the vertical portion of the outer peripheral surface of the guard.

The cross section of the vertical portion of the outer peripheral surface of the guard and the cross section of the inner peripheral surface of the vertical portion are both vertical. Additionally, since the vertical portion extends downward from the horizontal portion, the lower end of the inner peripheral surface of the vertical portion is disposed below the horizontal portion. In other words, the inner peripheral surface of the vertical portion has a certain length in the vertical direction. Therefore, even without precisely controlling the position of the guard in the vertical direction, the vertical portion of the outer peripheral surface of the guard can be horizontally opposed to the inner peripheral surface of the vertical portion, and the pressure loss in the path passing between the guard and the partition plate can be easily adjusted. .

The partition plate includes an inner ring including the horizontal portion and the vertical portion of the partition plate, and a support plate supporting the inner ring, and the inner ring is radially oriented in a direction perpendicular to the rotation axis. It is movable with respect to the support plate and guard.

According to this configuration, the inner circumferential ring including the horizontal portion and the vertical portion is supported on the support plate. The inner peripheral ring is movable in the radial direction with respect to the support plate. When the inner ring is moved radially with respect to the support plate, the inner ring moves radially with respect to the guard, and the radial distance from the inner peripheral surface of the vertical portion to the vertical portion of the outer peripheral surface of the guard changes. Accordingly, the shortest distance from the inner peripheral end of the partition plate to the guard can be changed, thereby increasing or decreasing the pressure loss in the path passing between the guard and the partition plate.

The vertical length of the opposing range where the inner peripheral surface of the vertical portion of the partition plate and the vertical portion of the outer peripheral surface of the guard face each other horizontally is located at the upstream end of the exhaust duct in the circumferential direction around the rotation axis. It is increasing as it gets closer.

According to this configuration, the vertical length (corresponding to the length L1 shown in FIG. 6) of the opposing range horizontally facing the inner peripheral surface of the vertical part of the partition plate and the vertical part of the outer peripheral surface of the guard is not constant over the entire circumference. , is changing. The distance from the inner peripheral edge of the partition plate to the guard is smallest between the inner peripheral surface of the vertical portion of the partition plate and the vertical portion of the outer peripheral surface of the guard. Therefore, the pressure loss in the path passing between the guard and the partition plate is not constant over the entire circumference, but varies.

If the pressure loss in the path passing between the guard and the partition plate is small near the exhaust duct (if the resistance applied to the gas passing downward through the gap between the guard and the partition plate is small near the exhaust duct), then the pressure loss in the path between the guard and the partition plate is small near the exhaust duct. The suction force for sucking in gas decreases significantly near the exhaust duct, and the suction force transmitted to positions distant from the upstream end of the exhaust duct in the circumferential direction decreases significantly. Since the length of the opposing range in the vertical direction increases as it gets closer to the upstream end of the exhaust duct in the circumferential direction, the pressure loss in this path increases as it gets closer to the upstream end of the exhaust duct in the circumferential direction. Therefore, it is possible to reduce the decrease in the suction force transmitted to a position distant from the upstream end of the exhaust duct in the circumferential direction, and improve the uniformity of the suction force in the circumferential direction.

The distance from the inner peripheral surface of the vertical portion of the partition plate to the vertical portion of the outer peripheral surface of the guard in the radial direction perpendicular to the rotation axis is the distance of the exhaust duct in the circumferential direction around the rotation axis. It decreases as it approaches the upstream end.

According to this configuration, the radial distance from the inner peripheral surface of the vertical portion of the partition plate to the vertical portion of the outer peripheral surface of the guard is not constant over the entire circumference but varies. The distance from the inner peripheral edge of the partition plate to the guard is smallest between the inner peripheral surface of the vertical portion of the partition plate and the vertical portion of the outer peripheral surface of the guard. Therefore, the pressure loss in the path passing between the guard and the partition plate is not constant over the entire circumference, but varies.

If the pressure loss in the path passing between the guard and the partition plate is small near the exhaust duct, the suction force that draws gas toward the exhaust duct decreases significantly near the exhaust duct, and the air flowing from the upstream end of the exhaust duct in the circumferential direction The suction power delivered to the location decreases significantly. Since the radial distance from the inner peripheral surface of the vertical part of the partition plate to the vertical part of the outer peripheral surface of the guard decreases as it gets closer to the upstream end of the exhaust duct in the circumferential direction, the pressure loss in this path is around the upstream end of the exhaust duct. It increases as the direction approaches. Therefore, it is possible to reduce the decrease in the suction force transmitted to a position distant from the upstream end of the exhaust duct in the circumferential direction, and improve the uniformity of the suction force in the circumferential direction.

Another embodiment of the present invention includes the steps of rotating the substrate around a vertical rotation axis passing through the center of the substrate while holding it horizontally, discharging a chemical solution toward the rotating substrate, and discharging a chemical solution outward from the substrate. A step of catching the chemical solution that has splashed onto a cylindrical guard including an upper end surrounding the substrate when viewed in plan and a cylindrical inclined part extending obliquely upward toward the upper end, and gas inside the guard. It includes an outer peripheral end spaced inward from the inner peripheral surface of the chamber surrounding the guard, and an inner peripheral end surrounding the guard, and is disposed below a partition plate that divides the space around the guard in the chamber into upper and lower parts. Suctioning gas under the partition plate into the upstream end of the exhaust duct and discharging it out of the chamber; Suctioning the gas below the partition plate into the upstream end of the exhaust duct and discharging it out of the chamber; After stopping the discharge of, lowering the guard, thereby increasing the shortest distance from the inner peripheral end of the partition plate to the guard.

According to this method, a chemical liquid is discharged toward a rotating substrate. After that, lower the guard. As a result, the shortest distance from the inner peripheral end of the partition plate to the guard increases, and the pressure loss in the path passing between the guard and the partition plate is reduced. Therefore, the flow rate of gas passing between the guard and the partition plate increases. Even if the chemical mist leaks out of the guard, the leaked mist passes downward through at least one of the gap between the chamber and the partition plate and the gap between the guard and the partition plate, and is sucked into the exhaust duct. Thereby, the leaked mist can be reliably removed.

The above or further other objects, features and effects in the present invention will become clear from the description of the embodiments described below with reference to the accompanying drawings.

1 is a schematic plan view showing the inside of a substrate processing apparatus according to a first embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view showing a vertical cross-section of the substrate processing apparatus along line II-II shown in FIG. 1.
Figure 3 is a schematic diagram of the interior of a processing unit provided in a substrate processing apparatus viewed horizontally.
Figure 4A is a schematic plan view showing the interior of the processing unit.
Figure 4b is a schematic plan view showing the interior of the processing unit.
Figure 5 is an enlarged view of a portion of Figure 3.
FIG. 6 is an enlarged view of a portion of FIG. 3 further enlarged.
Fig. 7 is an external view of the cylindrical outer wall viewed in the direction of arrow VII shown in Fig. 5.
Fig. 8 is a schematic plan view of the processing cup and partition plate as seen from above.
Figure 9 is a cross-sectional view for explaining the flow of gas within the processing unit.
Figure 10 is a block diagram showing the electrical configuration of the substrate processing device.
FIG. 11 is a process diagram for explaining an example of substrate processing performed by the substrate processing apparatus.
FIG. 12A is a cross-sectional view showing an example of the positions of the first guard and the second guard when supplying a chemical solution to the substrate.
FIG. 12B is a cross-sectional view showing an example of the positions of the first guard and the second guard when supplying the rinse liquid to the substrate.
FIG. 12C is a cross-sectional view showing an example of the positions of the first guard and the second guard when drying the substrate.
FIG. 13 is a cross-sectional view showing a vertical cross-section of a processing cup provided in the substrate processing apparatus according to the second embodiment of the present invention.
Fig. 14 is a cross-sectional view showing a vertical cross-section of the processing cup and partition plate according to the third embodiment of the present invention.
Fig. 15 is a cross-sectional view showing a vertical cross-section of the processing cup and partition plate according to the fourth embodiment of the present invention.
Fig. 16 is a cross-sectional view showing a horizontal cross-section of a processing cup according to a fifth embodiment of the present invention.
Fig. 17 is a cross-sectional view showing a horizontal cross-section of the processing cup and the exhaust duct according to the sixth embodiment of the present invention.

1 is a schematic plan view showing the inside of a substrate processing apparatus 1 according to a first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing a vertical cross-section of the substrate processing apparatus 1 taken along line II-II shown in FIG. 1.

The substrate processing device 1 is a single-wafer type device that processes disc-shaped substrates W, such as semiconductor wafers, one by one. As shown in FIG. 1 , the substrate processing apparatus 1 includes a load port LP supporting a carrier CA accommodating a plurality of substrates W, and transport from the carrier CA on the load port LP. A processing unit 2 for processing the substrate W with a processing fluid such as a processing liquid or processing gas, and a carrier CA on the load port LP and the processing unit 2 for transporting the substrate W It includes a transfer system 5 and a control device 3 that controls the substrate processing device 1. FIG. 1 shows an example in which a plurality of load ports LP and a plurality of processing units 2 are installed in the substrate processing apparatus 1 . A plurality of load ports LP are arranged horizontally in a straight line.

The plurality of processing units 2 form a plurality of towers TW, each of which includes a plurality of processing units 2 stacked vertically. Figure 1 shows an example in which four towers TW are formed. Half of the plurality of towers TW is arranged on the right side of the linear conveyance path 4, and the remaining half of the plurality of towers TW is arranged on the left side of the conveyance path 4. As shown in Fig. 2, in this example, each tower TW includes six processing units 2 stacked up and down. Accordingly, 24 processing units 2 are installed in the substrate processing apparatus 1.

The upper processing units 2 of all towers TW constitute an upper processing unit group, and the lower processing units 2 of all towers TW constitute a lower processing unit group. When the number of processing units 2 constituting one tower TW is odd, the processing unit 2 in the middle may belong to either the upper processing unit group or the lower processing unit group. In the examples shown in FIGS. 1 and 2 , the 12 upper processing units 2 constitute the upper processing unit group, and the 12 lower processing units 2 constitute the lower processing unit group.

As shown in FIG. 1, the transfer system 5 includes a substrate placement unit where the substrate W to be transferred is temporarily placed between the carrier CA on the load port LP and the processing unit 2. (6), an indexer robot (IR) that transports the substrate W between the carrier CA on the load port LP and the substrate placement unit 6, the substrate placement unit 6, and the processing unit 2. It includes a center robot (CR) that transports the substrate (W) between them.

The substrate placement unit 6 is arranged between the indexer robot (IR) and the center robot (CR) when viewed from the top. As shown in Fig. 2, the substrate placement section 6 includes an upper substrate placement section 6u and a lower substrate placement section 6L that overlap each other in plan view. The upper substrate placement unit 6u is disposed above the lower substrate placement unit 6L. The upper substrate placement unit 6u temporarily holds the substrate W transported between the upper processing unit group and the carrier CA. The lower substrate placement unit 6L temporarily holds the substrate W transported between the lower processing unit group and the carrier CA.

The upper substrate placement section 6u and the lower substrate placement section 6L are comprised of an unprocessed substrate placement section 7 on which an unprocessed substrate W is placed, and an unprocessed substrate placement section 7 on which the processed substrate W is placed. It includes a processed substrate placement unit 8. The unprocessed substrate placement unit 7 and the processed substrate placement unit 8 overlap each other when viewed from the top. The unprocessed substrate placement unit 7 is disposed above the processed substrate placement unit 8. In at least one of the upper substrate placement unit 6u and the lower substrate placement unit 6L, the unprocessed substrate placement unit 7 may be disposed below the processed substrate placement unit 8.

The unprocessed substrate placement unit 7 and the processed substrate placement unit 8 both include a plurality of support units that horizontally support a plurality of substrates W so as to overlap each other up and down. The support portion may be a plurality of pins that contact the lower surface of the substrate W, or may be a pair of rails extending horizontally from the right and left sides of the substrate W. The substrate W can enter the unprocessed substrate placement section 7 from either the indexer robot (IR) side or the center robot (CR) side, and either the indexer robot (IR) side or the center robot (CR) side. It is possible to enter the processed substrate placing section 8 from either side.

The indexer robot IR is arranged between the substrate placement section 6 and the load port LP when viewed from the top. The indexer robot IR includes one or more hands Hi that horizontally support the substrate W. The hand Hi can move in parallel in either the horizontal or vertical direction. The hand (Hi) can rotate more than 180 degrees around a vertical straight line. The hand Hi can load and unload the substrate W into and out of any of the carriers CA on the plurality of load ports LP, and either the unprocessed substrate placement unit 7 or the processed substrate placement unit 8. The substrate W can also be carried in and out.

As shown in FIG. 2, the center robot CR includes an upper center robot CRu that transports the substrate W between the upper substrate placement unit 6u and the upper processing unit group, and a lower substrate placement unit 6L. and a lower center robot (CRL) that transports the substrate W between the lower processing unit group. The upper center robot CRu is arranged above the lower center robot CRL. The upper center robot CRu and the lower center robot CRL are arranged on the conveyance path 4 formed between the plurality of towers TW.

The upper center robot CRu and the lower center robot CRL both include one or more hands Hc that horizontally support the substrate W. The hand Hc can move in parallel in either the horizontal or vertical direction. The hand Hc can rotate more than 180 degrees around a vertical straight line.

The hand Hc of the upper center robot CRu can load and unload the substrate W into and out of any processing unit 2 belonging to the upper processing unit group, and place the unprocessed substrate on the upper substrate placement unit 6u. The substrate W can be loaded into and unloaded from the section 7 and the processed substrate placing section 8. The hand Hc of the lower center robot CRL can load and unload the substrate W into and out of any of the processing units 2 belonging to the lower processing unit group, and place the unprocessed substrate on the lower substrate placement unit 6L. The substrate W can be loaded into and unloaded from the section 7 and the processed substrate placing section 8.

Figure 3 is a schematic diagram of the inside of the processing unit 2 viewed horizontally. 4A and 4B are schematic plan views showing the interior of the processing unit 2. In FIG. 4B, the partition plate 81 is omitted, and the cylindrical outer wall 70 is shown as a horizontal cross section located between the partition plate 81 and the exhaust duct 78. Figure 5 is an enlarged view of a portion of Figure 3. FIG. 6 is an enlarged view of a portion of FIG. 3 further enlarged. FIG. 7 is an external view of the cylindrical outer wall 70 viewed in the direction of arrow VII shown in FIG. 5 . FIG. 8 is a schematic plan view of the processing cup 52 and the partition plate 81 as seen from above.

As shown in FIG. 3, the processing unit 2 includes a box-shaped chamber 12 having an internal space, and a central portion of the substrate W while holding one substrate W horizontally within the chamber 12. It includes a spin chuck 21 that rotates around a vertical rotation axis A1 passing through the spin chuck 21 and a plurality of nozzles that supply a processing liquid such as a chemical liquid or a rinse liquid to the substrate W held in the spin chuck 21. do.

As shown in FIG. 4A, the chamber 12 includes a box-shaped partition wall 13 formed with an loading/unloading port 13b through which the substrate W passes, and a shutter 17 that opens and closes the loading/unloading port 13b. Includes. As shown in FIG. 3 , the chamber 12 further includes a baffle plate 18 disposed below the air outlet 13a that opens on the ceiling surface of the partition 13. The FFU 11 (fan filter unit 11) that sends clean air (air filtered by a filter) is disposed above the outlet 13a. The blower 13a is formed at the upper end of the chamber 12, and the exhaust duct 78, which will be described later, is located at the lower end of the chamber 12. The upstream end 78u of the exhaust duct 78 is located within the chamber 12, and the downstream end of the exhaust duct 78 is located outside the chamber 12.

The partition 13 includes a cylindrical side wall 15 surrounding the spin chuck 21, an upper wall 14 disposed above the spin chuck 21, and a lower wall disposed below the spin chuck 21. Includes (16). The lower surface of the upper wall 14 corresponds to the ceiling surface of the partition wall 13, and the upper surface of the lower wall 16 corresponds to the floor surface of the partition wall 13. The air blower 13a is formed in the upper wall 14, and the loading/unloading opening 13b is formed in the side wall 15.

The flow plate 18 divides the internal space of the chamber 12 into an upper space Su above the flow plate 18 and a lower space SL below the flow plate 18. The upper space Su between the ceiling surface of the partition wall 13 and the upper surface of the baffle plate 18 is a diffusion space where clean air diffuses. The lower space SL between the lower surface of the baffle plate 18 and the top surface of the partition wall 13 is a processing space where the substrate W is processed. The spin chuck 21 is disposed in the lower space SL. The vertical distance from the floor surface of the partition wall 13 to the lower surface of the baffle plate 18 is longer than the vertical distance from the upper surface of the baffle plate 18 to the ceiling surface of the partition wall 13.

The FFU 11 sends clean air to the upper space Su through the outlet 13a. The clean air supplied to the upper space Su reaches the baffle plate 18 and spreads the upper space Su. Clean air in the upper space Su passes through a plurality of through holes that penetrate the baffle plate 18 up and down, and flows downward throughout the baffle plate 18. Clean air supplied to the lower space SL is sucked into the exhaust duct 78 and discharged from the chamber 12. As a result, a downward flow (downflow) of uniform clean air flowing downward from the baffle plate 18 is formed in the lower space SL. The processing of the substrate W is performed in a state in which a downward flow of clean air is formed.

The spin chuck 21 includes a plurality of chuck pins 22 that horizontally clamp the substrate W, and a disk-shaped spin base 23 that supports the plurality of chuck pins 22. The spin chuck 21 also includes a spin shaft 24 extending downward from the center of the spin base 23, and a plurality of chuck pins 22 and the spin base 23 by rotating the spin shaft 24. It includes a rotating electric motor 25 and a chuck housing 26 surrounding the electric motor 25.

As shown in FIG. 5, the spin base 23 has a circular upper surface 23u disposed below the substrate W and a cylindrical shape extending downward from the outer periphery of the upper surface 23u of the spin base 23. Includes the outer peripheral surface (23o). The outer peripheral surface of the chuck housing 26 extends downward from the outer peripheral surface 23o of the spin base 23. The upper surface 23u of the spin base 23 is parallel to the lower surface of the substrate W. The upper surface 23u of the spin base 23 is separated from the lower surface of the substrate W. The upper surface 23u of the spin base 23 is concentric with the substrate W. The outer diameter of the upper surface 23u of the spin base 23 is larger than the outer diameter of the substrate W. The chuck pin 22 protrudes upward from the outer peripheral portion of the upper surface 23u of the spin base 23.

As shown in FIG. 3 , the plurality of nozzles includes a first chemical nozzle 27 that discharges a first chemical liquid toward the upper surface of the substrate W, and a first chemical liquid nozzle 27 that discharges a second chemical liquid toward the upper surface of the substrate W. 2 Includes a chemical liquid nozzle (31). The plurality of nozzles further include a central nozzle 44 that discharges the processing liquid toward the upper surface of the substrate W, and a lower nozzle 35 that discharges the processing liquid toward the lower surface of the substrate W. The center nozzle 44 and the lower nozzle 35 are examples of rinse liquid nozzles that discharge rinse liquid toward the upper or lower surface of the substrate W. Figure 3 shows an example in which the first chemical liquid is DHF (diluted hydrofluoric acid), the second chemical liquid is SC1 (ammonia-hydrogen peroxide solution mixture), and the rinse liquid is pure water (DIW (Deionized Water)).

The first chemical liquid nozzle 27 may be a scanning nozzle capable of moving the impact position of the processing liquid with respect to the substrate W within the upper or lower surface of the substrate W. It may be a fixed nozzle whose position cannot be moved. The same goes for other nozzles. FIG. 3 shows an example where the first chemical nozzle 27 and the second chemical nozzle 31 are scan nozzles, and the center nozzle 44 and the lower surface nozzle 35 are fixed nozzles.

The first chemical liquid nozzle 27 is connected to a first chemical liquid pipe 28 that guides the first chemical liquid to the first chemical liquid nozzle 27 . When the first chemical valve 29 installed in the first chemical liquid pipe 28 is opened, the first chemical liquid is continuously discharged downward from the discharge port of the first chemical liquid nozzle 27. Similarly, the second chemical liquid nozzle 31 is connected to the second chemical liquid pipe 32 that guides the second chemical liquid to the second chemical liquid nozzle 31. When the second chemical valve 33 installed in the second chemical liquid pipe 32 is opened, the second chemical liquid is continuously discharged downward from the discharge port of the second chemical liquid nozzle 31.

The first chemical solution is sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, aqueous ammonia, aqueous hydrogen peroxide, organic acid (e.g. citric acid, oxalic acid, etc.), organic alkali (e.g. TMAH: tetramethylammonium hydroxide, etc.) It may be a liquid containing at least one of , a surfactant, and a corrosion inhibitor, or it may be a liquid other than these. The same applies to the second chemical solution.

Although not shown, the first chemical liquid valve 29 includes a valve body provided with an annular valve seat through which the chemical liquid passes, a valve body that can move relative to the valve seat, a closed position where the valve body contacts the valve seat, and a valve body that is provided with an annular valve seat through which the chemical liquid passes. It includes an actuator that moves the valve body between open positions away from the valve seat. The same goes for other valves. The actuator may be a pneumatic actuator or an electric actuator, or may be an actuator other than these. The control device 3 opens and closes the first chemical liquid valve 29 by controlling the actuator.

The first chemical nozzle 27 is connected to a first nozzle moving unit 30 that moves the first chemical nozzle 27 in at least one of the vertical and horizontal directions. The first nozzle moving unit 30 includes a horizontally extending first nozzle arm 30a with a first chemical liquid nozzle 27 mounted on the tip. The first nozzle moving unit 30 moves the first nozzle arm 30a to provide a processing position at which the chemical liquid discharged from the first chemical liquid nozzle 27 is supplied to the upper surface of the substrate W, and the first chemical liquid nozzle 27. (27) The first chemical liquid nozzle 27 is moved horizontally between retracted positions located around the spin chuck 21 when viewed from this plane.

Similarly, the second chemical liquid nozzle 31 is connected to a second nozzle moving unit 34 that moves the second chemical liquid nozzle 31 in at least one of the vertical direction and the horizontal direction. The second nozzle moving unit 34 includes a horizontally extending second nozzle arm 34a with a second chemical liquid nozzle 31 mounted on the tip. The second nozzle moving unit 34 moves the second nozzle arm 34a to provide a processing position at which the chemical liquid discharged from the second chemical liquid nozzle 31 is supplied to the upper surface of the substrate W, and the second chemical liquid nozzle 34. (31) moves the second chemical liquid nozzle 31 horizontally between retracted positions located around the spin chuck 21 when viewed from the plane.

The first nozzle moving unit 30 may be a turning unit that horizontally moves the first chemical liquid nozzle 27 along an arc-shaped path passing through the central portion of the substrate W when viewed in plan, and may be located on the substrate W when viewed in plan. It may be a slide unit that moves the first chemical liquid nozzle 27 horizontally along a straight path passing through the center of (W). The same applies to the second nozzle moving unit 34. FIG. 4A shows an example in which both the first nozzle movement unit 30 and the second nozzle movement unit 34 are turning units.

The lower surface nozzle 35 includes a disk portion disposed between the upper surface 23u of the spin base 23 and the lower surface of the substrate W, and a cylindrical portion extending downward from the disk portion. The cylindrical portion of the lower surface nozzle 35 is inserted into a through hole extending upward and downward through the central portion of the spin base 23. The cylindrical portion of the lower nozzle 35 extends vertically along the rotation axis A1. The liquid discharge outlet of the lower surface nozzle (35) is opened in the central portion of the upper surface of the disk portion of the lower surface nozzle (35). When the substrate W is held in the spin chuck 21, the liquid discharge outlet of the lower surface nozzle 35 faces the central portion of the lower surface of the substrate W in an upward and downward direction.

The lower nozzle 35 is connected to a rinse liquid pipe 36 that guides the rinse liquid to the lower nozzle 35. When the rinse liquid valve 37 installed in the rinse liquid pipe 36 is opened, the rinse liquid is continuously discharged upward from the discharge port of the lower surface nozzle 35. The rinse liquid discharged from the lower nozzle 35 is pure water. The rinse solution includes IPA (isopropyl alcohol), carbonated water, electrolyzed ionized water, hydrogen water, ozone water, hydrochloric acid water at a diluted concentration (for example, about 10 to 100 ppm), and diluted water (for example, about 10 to 100 ppm). ) may be any one of the ammonia solutions.

The inner peripheral surface of the spin base 23 and the outer peripheral surface of the lower surface nozzle 35 form a cylindrical gas flow path 38 extending upward and downward. The lower cylindrical passage includes a central opening 38o that opens at the center of the upper surface 23u of the spin base 23. The disk portion of the lower nozzle 35 is disposed above the central opening 38o and overlaps the central opening 38o in plan view. The gas flow path 38 is connected to a gas pipe 39 that guides the inert gas to the central opening 38o of the spin base 23. When the gas valve 40 installed in the gas pipe 39 is opened, the inert gas is continuously discharged upward from the central opening 38o of the spin base 23. The inert gas discharged from the central opening 38o of the spin base 23 is nitrogen gas. The inert gas may be a gas other than nitrogen gas, such as helium gas or argon gas.

The processing unit 2 further includes a blocking member 41 disposed above the spin chuck 21 . Figure 3 shows an example in which the blocking member 41 is a disk-shaped blocking plate. The blocking member 41 is a disk portion disposed horizontally above the spin chuck 21. The blocking member 41 may further include a cylindrical portion extending downward from the outer periphery of the disk portion. The blocking member 41 is supported horizontally by a cylindrical support shaft 42 extending upward from the center of the blocking member 41. The center line of the blocking member 41 is disposed on the rotation axis A1 of the substrate W. The lower surface of the blocking member 41 is an opposing surface that faces the upper surface of the substrate W. The lower surface of the blocking member 41 is parallel to the upper surface of the substrate W and has an outer diameter equal to or larger than the diameter of the substrate W.

The blocking member 41 is connected to a blocking member lifting unit 43 that vertically raises and lowers the blocking member 41. The blocking member lifting unit 43 positions the blocking member 41 at an arbitrary position within the range from the retreat position (position shown in FIG. 3) to the processing position. The processing position is such that the lower surface of the blocking member 41 is positioned against the substrate W to a height at which the hand Hc of the center robot CR (see FIG. 1) cannot enter between the substrate W and the blocking member 41. It is a close position close to the upper surface of . The retreat position is a separation position where the blocking member 41 retreats to a height at which the hand Hc of the center robot CR can enter between the blocking member 41 and the substrate W. The processing position includes a liquid processing position (position shown in FIGS. 12A to 12B) and a dry processing position (position shown in FIG. 12C). The liquid treatment position is a position between the dry treatment position and the escape position.

The center nozzle 44 supplies a processing fluid, such as a processing liquid or a processing gas, to the substrate W through the central opening 47o opened in the central portion of the lower surface of the blocking member 41. The center nozzle 44 extends vertically along the rotation axis A1. The center nozzle 44 is inserted into a through hole that penetrates the central part of the blocking member 41 vertically. The inner peripheral surface of the blocking member 41 surrounds the outer peripheral surface of the central nozzle 44 at intervals in the radial direction (direction perpendicular to the rotation axis A1). The center nozzle 44 moves up and down together with the blocking member 41. The discharge port of the central nozzle 44 that discharges the processing fluid is disposed above the central opening 47o of the blocking member 41.

The center nozzle 44 is connected to a rinse fluid pipe 45 that guides the rinse fluid to the center nozzle 44. When the rinse liquid valve 46 installed in the rinse liquid pipe 45 is opened, the rinse liquid is continuously discharged downward from the discharge port of the central nozzle 44. The rinse liquid discharged from the central nozzle 44 passes through the central opening 47o of the blocking member 41 and collides with the upper surface of the substrate W. The rinse liquid discharged from the central nozzle 44 is pure water. The above-described rinse liquid other than pure water may be discharged from the central nozzle 44.

The inner peripheral surface of the blocking member 41 and the outer peripheral surface of the central nozzle 44 form a cylindrical gas passage 47 extending vertically. The gas flow path 47 is connected to a gas pipe 48 that guides the inert gas to the central opening 47o of the blocking member 41. When the gas valve 49 installed in the gas pipe 48 is opened, the inert gas is continuously discharged downward from the central opening 47o of the blocking member 41. The inert gas discharged from the central opening 47o of the blocking member 41 is nitrogen gas. The inert gas may be a gas other than nitrogen gas, such as helium gas or argon gas.

The processing unit 2 includes a cylindrical processing cup 52 surrounding the spin chuck 21 . The processing cup 52 includes a plurality of guards 53 that catch the processing liquid flying outward from the substrate W, and a plurality of cups that catch the processing liquid guided downward by the plurality of guards 53 ( 68) and a tubular outer wall 70 surrounding all guards 53 and all cups 68. Figure 3 shows an example in which two guards 53 and two cups 68 are provided, and the outermost cup 68 is integrated with the second guard 53 from the outside.

The two guards 53 surround the spin chuck 21 in a concentric circle shape. The two cups 68 also surround the spin chuck 21 in a concentric circle shape. Hereinafter, the outermost guard 53 is referred to as the first guard 53A, and the remaining guards 53 are referred to as the second guard 53B. Likewise, the outermost cup 68 is referred to as the first cup 68A, and the remaining cups 68 are referred to as the second cup 68B. The first guard 53A and the second guard 53B may be collectively referred to as the guard 53, and the first cup 68A and the second cup 68B may be collectively referred to as the cup 68. .

As shown in FIG. 5, the guard 53 includes a cylindrical portion 54 surrounding the spin chuck 21 and a cylindrical shape extending diagonally upward from the cylindrical portion 54 toward the rotation axis A1. Includes a ceiling portion 60. The ceiling portion 60 includes a cylindrical inclined portion 61 extending obliquely upward toward the rotation axis A1, and a circular horizontal portion extending horizontally from the top of the inclined portion 61 toward the rotation axis A1. It includes (62) and a circular bent portion 63 that protrudes downward from the inner peripheral edge of the horizontal portion 62 corresponding to the inner peripheral edge of the ceiling portion 60. The cylindrical portion 54 of the first guard 53A and the cylindrical portion 54 of the second guard 53B surround the spin chuck 21 in a concentric circle shape. The ceiling portion 60 of the first guard 53A is disposed above the ceiling portion 60 of the second guard 53B.

The inner peripheral portion of the ceiling portion 60 of the first guard 53A corresponds to the upper end portion 53u of the first guard 53A. The inner peripheral portion of the ceiling portion 60 of the second guard 53B corresponds to the upper end of the second guard 53B. The upper end 53u of the first guard 53A and the upper end of the second guard 53B form a circular opening surrounding the substrate W and the spin base 23 when viewed from the top. The inner diameter of the upper end 53u of the first guard 53A is smaller than the inner diameter of the upper end of the second guard 53B. The inner diameter of the upper end 53u of the first guard 53A may be equal to the inner diameter of the upper end of the second guard 53B. The inner diameter of the upper end 53u of the first guard 53A and the inner diameter of the upper end of the second guard 53B are larger than the outer diameters of the spin base 23 and the blocking member 41.

The cylindrical portion 54 of the guard 53 includes a cylindrical upper vertical portion 55 that extends vertically from the ceiling portion 60 in a downward direction. The cylindrical portion 54 of the first guard 53A, in addition to the upper vertical portion 55, extends vertically downward from the ceiling portion 60, and is a cylinder surrounding the upper vertical portion 55 in a concentric circle shape. It includes a shaped outer vertical portion 56 and a base ring 57 installed at the lower end of the outer vertical portion 56. The cylindrical portion 54 of the second guard 53B, in addition to the upper vertical portion 55, is a cylindrical intermediate inclined portion extending diagonally downward from the inner peripheral surface of the upper vertical portion 55 toward the rotation axis A1. (58) and a lower vertical portion 59 of a cylindrical shape extending vertically downward from the lower end of the intermediate inclined portion 58.

As shown in FIG. 6, the outer peripheral surface 64 of the first guard 53A includes a cylindrical vertical portion 65 having a vertical straight cross section and extending upward from the upper end of the vertical portion 65. A cylindrical arc portion 66 having a convex arc-shaped cross section on the outside, and a cylindrical inclined portion ( 67). The vertical portion 65 is the outer peripheral surface of the outer vertical portion 56 of the first guard 53A. The inclined portion 67 is the outer peripheral surface of the ceiling portion 60 of the first guard 53A. The circular arc portion 66 is the outer peripheral surface of a joint portion between the outer vertical portion 56 of the first guard 53A and the ceiling portion 60 of the first guard 53A.

As shown in FIG. 5, the cup 68 includes a cylindrical inner wall portion 69i surrounding the spin chuck 21 and a cylindrical outer wall portion surrounding the inner wall portion 69i at intervals in the radial direction. (69o) and a circular bottom wall portion 69b extending from the lower end of the inner wall portion 69i to the lower end of the outer wall portion 69o. The inner wall portion 69i, the outer wall portion 69o, and the bottom wall portion 69b form an annular liquid outlet opening upward. The liquid caught by the guard 53 flows down into the liquid outlet. The drain port for discharging the liquid in the cup 68 is open at the upper surface of the bottom wall portion 69b.

The inner wall portion 69i of the first cup 68A extends downward from the upper vertical portion 55 of the second guard 53B. The inner wall portion 69i of the first cup 68A surrounds the lower vertical portion 59 of the second guard 53B. The inner wall portion 69i of the first cup 68A is disposed outside the outer wall portion 69o of the second cup 68B.

The inner wall portion 69i of the second cup 68B is arranged along the outer peripheral surface of the chuck housing 26. The outer peripheral surface of the chuck housing 26 includes a tapered portion 26t that gradually becomes thinner toward the upper end of the chuck housing 26. The inner wall portion 69i of the second cup 68B is disposed inside the lower end (outer peripheral end) of the tapered portion 26t, and overlaps the tapered portion 26t in plan view. The outer wall portion 69o of the second cup 68B is disposed outside the lower end of the tapered portion 26t.

The upper vertical portion 55 of the first guard 53A is inserted between the inner wall portion 69i and the outer wall portion 69o of the first cup 68A. The lower vertical portion 59 of the second guard 53B is inserted between the inner wall portion 69i and the outer wall portion 69o of the second cup 68B. The first guard 53A is separated from the first cup 68A and is not in contact with the first cup 68A. Likewise, the second guard 53B is away from the second cup 68B and is not in contact with the second cup 68B. The treatment liquid received by the first guard 53A flows through the upper vertical portion 55 of the first guard 53A and enters the first cup 68A. The processing liquid received by the second guard 53B flows through the lower vertical portion 59 of the second guard 53B and enters the second cup 68B.

The first guard 53A and the second guard 53B can move up and down with respect to the partition wall 13 of the chamber 12. The first cup 68A is integrated with the second guard 53B and moves up and down together with the second guard 53B. The first cup 68A is a separate member from the second guard 53B and may be fixed to the partition wall 13. The second cup 68B is fixed to the partition wall 13. The bottom wall portion 69b of the second cup 68B is spaced upward from the floor surface of the chamber 12 (the floor surface of the partition 13; the same applies hereinafter). The bottom wall portion 69b of the first cup 68A also extends upward from the floor surface of the chamber 12.

The cylindrical outer wall 70 extends upward from the floor surface of the chamber 12. The upper end of the cylindrical outer wall 70 is disposed above the lower end of the outer peripheral surface 23o of the spin base 23. The upper end of the cylindrical outer wall 70 is disposed below the substrate W. The inner peripheral surface 70i and the outer peripheral surface 70o of the cylindrical outer wall 70 are vertical. The inner peripheral surface 70i of the cylindrical outer wall 70 concentrically surrounds the outer peripheral surface 64 of the first guard 53A at intervals in the radial direction. The outer peripheral surface 70o of the cylindrical outer wall 70 is spaced inward from the side wall 15 of the chamber 12 (side wall 15 of the partition wall 13, hereinafter the same). The inner peripheral surface 70i and the outer peripheral surface 70o of the cylindrical outer wall 70 may be cylindrical surfaces concentric with the outer peripheral surface 64 of the first guard 53A, and are concentric with the outer peripheral surface 64 of the first guard 53A. It may include two or more strip-shaped surfaces formed in an arc shape and two or more connection surfaces connecting the two or more strip-shaped surfaces.

As shown in FIG. 3, the plurality of guards 53 are connected to a guard lifting unit 51 that individually raises and lowers the plurality of guards 53 in the vertical direction. The guard lifting unit 51 positions the guard 53 at an arbitrary position within the range from the processing position to the retreat position. FIG. 3 shows a state in which the first guard 53A and the second guard 53B are disposed at the retracted position. The processing position is a position where the upper end of the guard 53 is positioned above the holding position of the substrate W held by the spin chuck 21. The retracted position is a position where the upper end of the guard 53 is disposed below the holding position of the substrate W.

The processing positions include an upper processing position (position shown in FIG. 12A) and a lower processing position (position shown in FIG. 12B). The upper processing position and the lower processing position are both positions where the upper end of the guard 53 is disposed above the holding position of the substrate W. The upper processing position is a position above the lower processing position. The upper processing position of the second guard 53B located inside the first guard 53A is such that the bent portion 63 of the first guard 53A located at the upper processing position is of the first guard 53A. This position blocks the entrance to the gap between the ceiling portion 60 and the ceiling portion 60 of the second guard 53B. The lower processing position of the second guard 53B is such that the bent portion 63 of the first guard 53A located at the lower processing position is connected to the ceiling portion 60 of the first guard 53A and the second guard 53B. This is a position that blocks the entrance to the gap between the ceiling parts 60.

When supplying processing liquid to the rotating substrate W, at least one guard 53 is disposed at the processing position. In this state, when the processing liquid is supplied to the substrate W, the processing liquid is thrown outward from the substrate W. The dislodged processing liquid collides with the inner surface of the guard 53 horizontally facing the substrate W and is guided to the cup 68 corresponding to the guard 53 . As a result, the processing liquid discharged from the substrate W is collected in the cup 68.

As shown in FIG. 3 , the processing unit 2 includes an exhaust duct 78 that exhausts gas within the chamber 12 . The exhaust duct 78 is connected to the cylindrical outer wall 70. The exhaust duct 78 is disposed below the substrate W. The exhaust duct 78 penetrates the side wall 15 of the chamber 12. The exhaust duct 78 extends horizontally from the cylindrical outer wall 70 to the outside of the chamber 12. The exhaust duct 78 is connected to an exhaust facility installed in a factory where the substrate processing apparatus 1 is installed. The gas (including mist-like liquid) in the chamber 12 is sucked into the exhaust duct 78 through the upstream end 78u of the exhaust duct 78 by the suction force of the exhaust equipment, and is drawn into the exhaust duct 78. guided towards the exhaust system.

The exhaust duct 78 is inserted into an exhaust hole 72 that penetrates the cylindrical outer wall 70 in the radial direction. The exhaust duct 78 protrudes from the inner peripheral surface 70i of the cylindrical outer wall 70. The upstream end 78u of the exhaust duct 78 is disposed inside the cylindrical outer wall 70. The upstream end 78u of the exhaust duct 78 is disposed outside the outer peripheral end of the first guard 53A. The upstream end 78u of the exhaust duct 78 forms an exhaust port for sucking the gas in the chamber 12. If the exhaust port of the exhaust duct 78 and the discharge hole 72 of the cylindrical outer wall 70 overlap each other, the upstream end 78u of the exhaust duct 78 is on the outer peripheral surface 70o of the cylindrical outer wall 70. You may be connected. The number of exhaust ports formed in the exhaust duct 78 is one. A plurality of exhaust ports may be formed in the exhaust duct 78.

As shown in FIG. 5, the cylindrical outer wall 70 includes a cylindrical body 71 surrounding the first guard 53A and the second guard 53B, and a slide cover 75 mounted on the cylindrical body 71. ) includes. The inner peripheral surface and outer peripheral surface of the cylindrical body 71 correspond to the inner peripheral surface 70i and the outer peripheral surface 70o of the cylindrical outer wall 70. The discharge hole 72 (see FIG. 3) is formed in the cylindrical body 71. The slide cover 75 covers a portion of the through hole 74 that penetrates the cylindrical body 71 in the radial direction. The through hole 74 of the cylindrical body 71 and the slide cover 75 form an exhaust relay hole 73 through which gas flowing from the outside of the cylindrical outer wall 70 to the inside of the cylindrical outer wall 70 passes. I'm doing it.

The slide cover 75 is disposed on the outside of the cylindrical outer wall 70 and is fixed to the cylindrical outer wall 70 with bolts 77 . As shown in FIG. 7 , the bolt 77 is inserted into the long hole 76 formed in the slide cover 75. FIG. 7 shows an example in which the long hole 76 of the slide cover 75 extends in the circumferential direction (direction around the rotation axis A1). The slide cover 75 is movable with respect to the cylindrical outer wall 70 within a range in which the bolt 77 and the long hole 76 can move relative to each other.

The exhaust relay hole 73 corresponds to a portion of the through hole 74 of the cylindrical body 71 that is not covered by the slide cover 75. When the bolts 77 that secure the slide cover 75 to the cylindrical outer wall 70 are loosened and the slide cover 75 is moved relative to the cylindrical outer wall 70, the slide cover ( 75) The area of the area covered changes. Thereby, the area of the exhaust relay hole 73 is adjusted. After that, when the bolt 77 is tightened, the slide cover 75 is fixed to the cylindrical outer wall 70 again.

FIG. 7 shows an example in which the through hole 74 and the slide cover 75 are square in shape, and the slide cover 75 is movable in the circumferential direction. If the area of the through hole 74 that is not blocked by the slide cover 75 is small, a slit extending up and down is formed by the cylindrical outer wall 70 and the slide cover 75. This slit corresponds to the exhaust relay hole 73. The area of the exhaust relay hole 73 is smaller than the area of the exhaust port formed by the upstream end 78u of the exhaust duct 78. The area of the exhaust relay hole 73 may be larger than or equal to the area of the exhaust port.

As shown in FIG. 4B, the cylindrical outer wall 70 includes a cylindrical portion 91 concentrically surrounding the first guard 53A in plan view, and a pair of cylindrical portions 91 protruding outward from the cylindrical portion 91. It includes a protrusion 92 of. The pair of protrusions 92 are arranged on opposite sides of the rotation axis A1 corresponding to the rotation center of the substrate W in a plan view. The inner peripheral surface 91i of the cylindrical portion 91 directly faces the outer peripheral surface 64 of the first guard 53A at a distance in the radial direction when viewed in plan. The distance between the inner peripheral surface 91i of the cylindrical portion 91 and the outer peripheral surface 64 of the first guard 53A in the radial direction is constant or substantially constant. The above-described discharge hole 72 (see FIG. 3) and through hole 74 (see FIG. 5) penetrate the cylindrical portion 91 in the radial direction. The exhaust duct 78 extends from the outer peripheral surface of the cylindrical portion 91 toward the inner peripheral surface 12i of the chamber 12.

Each protrusion 92 includes an outermost wall 94 disposed outside the cylindrical portion 91 and a pair of side walls 93 extending from the cylindrical portion 91 to the outermost wall 94 . In a horizontal cross section, the side wall 93 extends in a straight line from the inner end of the side wall 93 to the outer end of the side wall 93. The outermost wall 94 extends from the outer end of one side wall 93 to the outer end of the other side wall 93. The gap between the inner surface of the outermost wall 94 and the outer peripheral surface 64 of the first guard 53A in the radial direction is equal to the inner peripheral surface 91i of the cylindrical portion 91 in the radial direction and the first guard 53A. It is larger than the spacing of the outer peripheral surface (64). The angle of the corner formed by the inner surface of the side wall 93 and the inner peripheral surface 91i of the cylindrical portion 91 is, for example, 90 degrees or approximately 90 degrees.

The guard lifting unit 51 is accommodated in a pair of protrusions 92 of the cylindrical outer wall 70. The guard lifting unit 51 includes a lifting actuator 98 that converts energy such as electric power or air pressure into movement of the output part, and a transmission mechanism 95 that transmits the movement of the output part of the lifting actuator 98 to the guard 53. Includes. Two lifting actuators 98 and two transmission mechanisms 95 are installed for each guard 53. The two transmission mechanisms 95 corresponding to the same guard 53 are arranged on opposite sides with respect to the rotation axis A1. The two transmission mechanisms 95 are disposed between the protrusion 92 on one side and the first guard 53A, and the remaining two transmission mechanisms 95 are disposed between the protrusion 92 on the other side and the first guard (53A). 53A).

The lifting actuator 98 may be a linear actuator that converts energy into linear motion of the output portion, or may be a rotary actuator that converts energy into rotational motion of the output portion. When the lifting actuator 98 is a rotary actuator such as an electric motor, the transmission mechanism 95 is provided with a conversion mechanism that converts the rotation of the output portion of the lifting actuator 98 into the movement of the guard 53 in the vertical direction, there is. The conversion mechanism may be a ball screw mechanism or a rack and pinion mechanism, or may be other than these.

FIG. 4B shows an example in which the lifting actuator 98 is an electric motor and the conversion mechanism of the transmission mechanism 95 is a rack and pinion mechanism. The rack and pinion mechanism includes a pinion 97 that is driven to rotate by a lifting actuator 98, and a rack shaft 96 that moves in the axial direction as the pinion 97 rotates. The two rack axes 96 are disposed between the protrusion 92 on one side and the first guard 53A, and the remaining two rack axes 96 are between the protrusion 92 on the other side and the first guard 53A. It is placed in between. The four rack axes 96 are supported in a vertical position.

The two rack axes 96 corresponding to the first guard 53A are connected to the first guard 53A through brackets provided for each rack axle 96. The two rack axes 96 corresponding to the second guard 53B (see FIG. 5) are connected to the second guard 53B through brackets provided for each rack axle 96. When the lifting actuator 98 rotates the pinion 97, the rack axis 96 moves upward or downward with respect to the pinion 97 by a movement amount corresponding to the rotation angle of the pinion 97, and the movement of the rack axis 96 This is transmitted to the guard 53. The control device 3 (see FIG. 1) controls the two lifting and lowering actuators 98 corresponding to the same guard 53 to move the first guard 53A or the second guard 53B from the processing position to the retracted position. Stop at any position within the range.

As shown in FIG. 5 , the processing unit 2 includes a partition plate 81 that divides the space around the first guard 53A in the chamber 12 into upper and lower sections. The partition plate 81 is arranged around the first guard 53A. The partition plate 81 includes an inner ring 83 horizontally facing the outer peripheral surface 64 of the first guard 53A, and a support plate 82 supporting the inner peripheral ring 83. The inner peripheral ring 83 and the support plate 82 surround the first guard 53A. The inner peripheral ring 83 is fixed to the support plate 82. The inner peripheral ring 83 and the support plate 82 divide the space around the first guard 53A in the chamber 12 into upper and lower parts.

The support plate 82 is disposed above the cylindrical outer wall 70. The support plate 82 is placed on the cylindrical outer wall 70 and is supported by the cylindrical outer wall 70 . The support plate 82 is fixed to the partition wall 13 of the chamber 12. The support plate 82 may be one integrated member or may be a plurality of divided pieces. The upper surface of the support plate 82 is a horizontal plane from the inner peripheral edge of the support plate 82 to the outer peripheral edge of the support plate 82. The upper surface of the support plate 82 may be a flat inclined surface extending diagonally upward or diagonally downward toward the rotation axis A1 of the substrate W, and includes a horizontal portion that is horizontal and flat and an inclined portion that is inclined at an angle with respect to the horizontal surface. You can stay.

The outer peripheral surface of the support plate 82 corresponds to the outer peripheral edge 81o of the partition plate 81. The outer peripheral edge 81o of the partition plate 81 is arranged along the inner peripheral surface 12i of the chamber 12 (the inner peripheral surface of the side wall 15 of the partition 13; the same applies hereinafter). The outer peripheral end 81o of the partition plate 81 is horizontally separated from the inner peripheral surface 12i of the chamber 12 and faces the inner peripheral surface 12i of the chamber 12 horizontally. The size of the outer gap Go between the inner peripheral surface 12i of the chamber 12 and the outer peripheral end 81o of the partition plate 81 is constant or substantially constant regardless of the location. The outer gap Go is larger than the thickness of the substrate W and smaller than the shortest radial distance from the outer peripheral edge 81o of the partition plate 81 to the inner peripheral edge 81i of the partition plate 81.

The inner peripheral ring 83 has a vertical portion 85 facing radially the outer peripheral surface 64 of the first guard 53A, and a horizontal portion 84 extending from the vertical portion 85 toward the support plate 82. Includes. The vertical portion 85 is disposed inside the support plate 82 and is surrounded by the support plate 82 . The horizontal portion 84 overlaps the support plate 82 when viewed from the top and is in contact with the support plate 82. The horizontal portion 84 protrudes from the inner peripheral end of the support plate 82 toward the first guard 53A. The horizontal portion 84 is disposed above the support plate 82. The horizontal portion 84 may be disposed below the support plate 82 . In the example shown in FIG. 5 , the upper surface of the horizontal portion 84 corresponds to the upper end of the partition plate 81 . The upper end of the partition plate 81 is disposed below the substrate W.

The vertical portion 85 surrounds the first guard 53A when viewed from the top. The vertical portion 85 is disposed above the base ring 57 of the first guard 53A, and overlaps the base ring 57 in plan view. The inner diameter of the vertical portion 85 is larger than the outer diameter of the outer vertical portion 56 of the first guard 53A and smaller than the outer diameter of the base ring 57 of the first guard 53A. The inner peripheral surface of the vertical portion 85 is concentric or substantially concentric with the outer peripheral surface 64 of the first guard 53A and has a cylindrical shape.

The inner peripheral surface of the vertical portion 85 corresponds to the inner peripheral surface 83i of the inner peripheral ring 83. The inner peripheral surface 83i of the inner peripheral ring 83 is vertical from the upper end of the inner peripheral surface 83i of the inner peripheral ring 83 to the lower end of the inner peripheral surface 83i of the inner peripheral ring 83. The upper end of the inner peripheral surface 83i of the inner peripheral ring 83 is disposed below the substrate W. The upper end of the inner peripheral surface 83i of the inner peripheral ring 83 is disposed above the upper end of the cylindrical outer wall 70. The lower end of the inner peripheral surface 83i of the inner peripheral ring 83 is located below the upper end of the cylindrical outer wall 70. The lower end of the inner peripheral surface 83i of the inner ring 83 is disposed above the lower end of the outer peripheral surface 23o of the spin base 23.

As described above, the first guard 53A and the second guard 53B stop at any position within the range from the upper processing position to the retraction position. The lower processing position is a position between the upper processing position and the retraction position. The upper processing position and the lower processing position are both positions where the upper end of the guard 53 is disposed above the substrate W. The retracted position is a position where the upper end of the guard 53 is disposed below the substrate W.

No matter where the first guard 53A is disposed, at least a portion of the inner peripheral surface 83i of the inner peripheral ring 83 is disposed at the same height as the outer peripheral surface 64 of the first guard 53A. As shown in FIG. 6 , when the first guard 53A is disposed at the upper processing position, the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A is aligned with the inner peripheral ring 83 at intervals in the radial direction. It faces horizontally the inner peripheral surface (83i) of . Since both the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A and the inner peripheral surface 83i of the inner peripheral ring 83 are vertical, at this time, the inner gap Gi of a cylindrical shape extending vertically. This is formed between the first guard (53A) and the inner ring (83). When the first guard 53A is disposed at the upper processing position, the vertical portion 85 is spaced upward from the base ring 57 of the first guard 53A.

When the first guard 53A is disposed at the upper processing position, the inner peripheral surface 83i of the inner peripheral ring 83 is closest to the first guard 53A among the partition plates 81. Therefore, the inner gap Gi between the inner peripheral surface 83i of the inner ring 83 and the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A is the first guard 53A and the partition plate 81 ) corresponds to the smallest minimum gap among the gaps between The radial distance from the inner peripheral surface 83i of the inner peripheral ring 83 to the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A corresponds to the size D1 of the inner gap Gi.

The inner peripheral surface 83i of the inner peripheral ring 83 corresponds to the inner peripheral edge 81i of the partition plate 81. The inner gap Gi between the inner peripheral edge 81i of the partition plate 81 and the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A is larger than the thickness of the substrate W, and the partition plate ( It is smaller than the shortest distance in the radial direction from the outer peripheral end 81o of the partition plate 81 to the inner peripheral end 81i of the partition plate 81. The inner gap Gi may be smaller or larger than the outer gap Go (see Fig. 5), or may be equal to the outer gap Go.

If the inner diameter of the vertical portion 85 and the outer diameter of the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A are constant, the size D1 of the inner gap Gi and the cross-sectional area of the inner gap Gi ( The cross-sectional area of the inner gap Gi along the horizontal plane is constant regardless of the height of the first guard 53A (position of the first guard 53A in the vertical direction; hereinafter the same). In contrast, the length L1 of the inner gap Gi (length L1 of the inner gap Gi in the vertical direction; hereinafter the same) changes depending on the height of the first guard 53A. For example, if the first guard 53A is positioned above the position shown in FIG. 6, the inner gap Gi becomes longer in the vertical direction.

If the height of the first guard 53A is changed within the range where the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A is horizontally opposed to the inner peripheral surface 83i of the inner ring 83, the inner gap ( The size (D1) and cross-sectional area of Gi) do not change, and the length (L1) of the inner gap (Gi) increases or decreases. The length L1 of the inner gap Gi and the height of the first guard 53A are directly proportional to each other. That is, when the first guard 53A is moved up and down, the length L1 of the inner gap Gi increases or decreases by the amount of movement of the first guard 53A multiplied by a positive constant. Therefore, compared to the case where at least one of the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A and the inner peripheral surface 83i of the inner peripheral ring 83 is inclined at an angle, the pressure loss in the inner gap Gi can be easily adjusted.

When the first guard 53A is placed at the lower processing position, the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A is aligned with the inner peripheral surface 83i of the inner peripheral ring 83 at intervals in the radial direction. It may face horizontally, and it does not have to face horizontally the inner peripheral surface (83i) of the inner peripheral ring (83). That is, the upper end of the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A may be disposed below the lower end of the inner peripheral surface 83i of the inner peripheral ring 83. When the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A horizontally faces the inner peripheral surface 83i of the inner ring 83 at a distance in the radial direction, the length of the inner gap Gi (L1 ) is shorter than when the first guard 53A is disposed at the upper processing position.

When the first guard 53A is disposed at either the upper processing position or the lower processing position, the pressure loss in the path passing between the first guard 53A and the partition plate 81 is the first guard 53A. is larger than when placed in the retreat position. The pressure loss of the path passing between the first guard 53A and the partition plate 81 varies depending on the cross-sectional area of the inner gap Gi. If the cross-sectional area of the inner gap Gi is the same, this pressure loss changes depending on the length L1 of the inner gap Gi. Therefore, when the first guard 53A is disposed at the upper processing position, the pressure loss in the path passing between the first guard 53A and the partition plate 81 is It is bigger than when placed.

The inner peripheral ring 83 may be one integrated member or may be a plurality of divided members. The inner peripheral ring 83 may be integrated with the support plate 82. In this case, the vertical portion 85 of the inner peripheral ring 83 may extend downward from the inner peripheral end of the support plate 82. In Figure 8, the inner peripheral ring 83 is divided into three circular arc-shaped split rings 83r arranged in the circumferential direction, and each split ring 83r is fixed to the support plate 82 by a bolt 87. It shows an example.

The bolt 87 that secures the split ring 83r to the support plate 82 is inserted into the long hole 86 formed in the split ring 83r. The long hole 86 of the split ring 83r extends in the radial direction. The split ring 83r is movable with respect to the support plate 82 within a range in which the bolt 87 and the long hole 86 can move relative to each other. When the bolt 87 is loosened and the split ring 83r is moved radially relative to the support plate 82, the inner peripheral ring 83 is separated from the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A. The radial distance to the inner peripheral surface 83i changes. Thereby, the size D1 and cross-sectional area of the inner gap Gi can be adjusted.

FIG. 9 is a cross-sectional view for explaining the flow of gas within the processing unit 2. Below, reference is made to FIGS. 3 and 9. FIG. 9 shows a state in which the first guard 53A and the second guard 53B are disposed at the upper processing position.

The exhaust duct 78 is connected to an exhaust facility installed in a factory where the substrate processing apparatus 1 is installed. The gas above the first guard 53A is drawn toward the upper end 53u of the first guard 53A by the suction force of the exhaust equipment, and passes downward inside the upper end 53u of the first guard 53A. . The airflow F1 in FIG. 9 represents the airflow passing inside the upper end portion 53u of the first guard 53A. The gas that has passed inside the upper end 53u of the first guard 53A passes through the inside and lower sides of all guards 53, or passes between two radially adjacent guards 53. Afterwards, it is sucked into the exhaust duct 78.

On the other hand, the inner ring 83 constituting the inner peripheral end 81i of the partition plate 81 is separated from the first guard 53A, and an inner gap is formed between the first guard 53A and the partition plate 81. Since (Gi) is formed, the gas above the first guard 53A and the partition plate 81 moves into the inner gap Gi between the first guard 53A and the partition plate 81 due to the suction force of the exhaust equipment. It is pulled toward and passes downward through the inner gap Gi. The air flow F2 in FIG. 9 represents the air flow passing through the inner gap Gi. Gas that has passed through the inner gap Gi is drawn into the exhaust duct 78.

In addition, an exhaust relay hole 73 penetrating the cylindrical outer wall 70 in the radial direction is formed in the cylindrical outer wall 70, and a support plate 82 constituting the outer peripheral end 81o of the partition plate 81 ) is away from the inner peripheral surface 12i of the chamber 12, the gas above the partition plate 81 is sucked toward the outer gap Go between the chamber 12 and the partition plate 81 by the suction force of the exhaust equipment. It is pulled and passes downward through the outer gap Go. Afterwards, this gas is sucked into the inside of the cylindrical outer wall 70 from the exhaust relay hole 73 and drawn into the exhaust duct 78. The air flow F3 in FIG. 9 represents the air flow that passes through the outer gap Go between the chamber 12 and the partition plate 81 and then through the exhaust relay hole 73.

The size of the outer gap Go between the chamber 12 and the partition plate 81 is constant regardless of the height of the first guard 53A. In contrast, the size D1 (see FIG. 6) of the inner gap Gi between the first guard 53A and the partition plate 81 changes depending on the height of the first guard 53A. In addition, if the height of the first guard 53A is changed within the range where the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A horizontally opposes the inner peripheral surface 83i of the inner peripheral ring 83, the inner peripheral surface 64 of the first guard 53A is changed. Only the length L1 (see Fig. 6) of the gap Gi changes. Therefore, by changing the height of the first guard 53A, the pressure loss in the inner gap Gi can be changed, and the flow rate of gas flowing into the inner gap Gi can be changed.

FIG. 10 is a block diagram showing the electrical configuration of the substrate processing apparatus 1.

The control device 3 is a computer including a computer main body 3a and a peripheral device 3d connected to the computer main body 3a. The computer main body 3a includes a CPU 3b (central processing unit) that executes various instructions and a memory 3c that stores information. The peripheral device 3d includes a storage 3e that stores information such as a program P, a reader 3f that reads information from a removable media (RM), and a communication device that communicates with other devices such as a host computer. Includes device (3g).

The control device 3 is connected to an input device and a display device. The input device is operated when an operator, such as a user or a maintenance person, inputs information into the substrate processing apparatus 1. Information is displayed on the screen of the display device. The input device may be any one of a keyboard, a pointing device, and a touch panel, or may be a device other than these. A touch panel display that also serves as an input device and a display device may be installed in the substrate processing apparatus 1.

CPU 3b executes program P stored in storage 3e. The program P in the storage 3e may be pre-installed on the control device 3, or may be sent to the storage 3e from the removable media (RM) via the reader 3f, or may be sent to the storage 3e through a host computer, etc. It may be sent to the storage 3e from an external device through the communication device 3g.

Storage 3e and removable media (RM) are non-volatile memories that retain memory even when power is not supplied. The storage 3e is a magnetic storage device such as a hard disk drive, for example. Removable media (RM) is, for example, an optical disk such as a compact disk or a semiconductor memory such as a memory card. Removable media (RM) is an example of a computer-readable recording medium on which a program (P) is recorded. Removable media (RM) is a non-transitory tangible media.

The storage 3e stores multiple recipes. The recipe is information that specifies the processing content, processing conditions, and processing sequence of the substrate W. The plurality of recipes differ from each other in at least one of the processing content of the substrate W, processing conditions, and processing sequence. The control device 3 controls the substrate processing device 1 so that the substrate W is processed according to a recipe specified by the host computer. The control device 3 is programmed to execute each process described later.

FIG. 11 is a process diagram for explaining an example of processing of the substrate W performed by the substrate processing apparatus 1. Below, reference is made to FIGS. 3 and 11 .

The substrate W to be processed is, for example, a semiconductor wafer such as a silicon wafer. The surface of the substrate W corresponds to a device formation surface on which devices such as transistors and capacitors are formed. The substrate W may be a substrate W on which a pattern is formed on the surface of the substrate W, which is a pattern formation surface, or may be a substrate W on which a pattern is not formed on the surface of the substrate W.

When the substrate W is processed by the substrate processing apparatus 1, a loading process (step S1 in FIG. 11) of loading the substrate W into the chamber 12 is performed.

Specifically, in a state where the blocking member 41 is located at the retracted position, all guards 53 are located at the retracted position, and all scan nozzles are located at the retracted position, the center robot (CR) (see FIG. 1) While supporting the substrate W with the hand Hc, the hand Hc is allowed to enter the chamber 12. Then, the center robot CR places the substrate W on the hand Hc on the plurality of chuck pins 22 with the surface of the substrate W facing upward. After that, the plurality of chuck pins 22 are pressed against the outer peripheral surface of the substrate W, and the substrate W is held. After placing the substrate W on the spin chuck 21, the center robot CR retracts the hand Hc from the inside of the chamber 12.

Next, the gas valve 49 and the gas valve 40 open, and the central opening 47o of the blocking member 41 and the central opening 38o of the spin base 23 start discharging nitrogen gas. As a result, the space between the substrate W and the blocking member 41 and the space between the substrate W and the spin base 23 are filled with nitrogen gas. On the other hand, the blocking member lifting unit 43 lowers the blocking member 41 from the retracted position to the liquid treatment position, and the guard lifting unit 51 raises the at least one guard 53 from the retracted position to the processing position. I order it. After that, the electric motor 25 is driven, and rotation of the substrate W begins (step S2 in FIG. 11).

Next, a first chemical solution supply process is performed in which DHF, which is an example of the first chemical solution, is supplied to the upper surface of the substrate W (step S3 in FIG. 11).

Specifically, in a state where the blocking member 41 is located at the liquid processing position and at least one guard 53 is located at the processing position, the first nozzle moving unit 30 moves the first chemical liquid nozzle 27. Move from the evacuation position to the processing position. After that, the first chemical liquid valve 29 opens, and the first chemical liquid nozzle 27 starts discharging DHF. When a predetermined time elapses after the first chemical valve 29 is opened, the first chemical valve 29 closes and the discharge of DHF is stopped. After that, the first nozzle moving unit 30 moves the first chemical liquid nozzle 27 to the retracted position.

The DHF discharged from the first chemical liquid nozzle 27 collides with the upper surface of the substrate W rotating at the first chemical liquid supply speed and then flows outward along the upper surface of the substrate W due to centrifugal force. Therefore, DHF is supplied to the entire upper surface of the substrate W, and a DHF liquid film covering the entire upper surface of the substrate W is formed. When the first chemical liquid nozzle 27 is discharging DHF, the first nozzle moving unit 30 is positioned so that the liquid landing position of DHF on the upper surface of the substrate W passes the central part and the outer peripheral part. You may move it, or you may stop the liquid contact position at the center.

Next, a first rinse liquid supply process is performed in which pure water, which is an example of a rinse liquid, is supplied to the upper surface of the substrate W (step S4 in FIG. 11).

Specifically, in a state where the blocking member 41 is located at the liquid processing position and at least one guard 53 is located at the processing position, the rinse liquid valve 46 is opened and the central nozzle 44 is opened to allow pure water. Start discharging. Before the discharge of pure water starts, the guard lifting unit 51 moves at least one guard 53 vertically to switch the guard 53 that catches the liquid flying outward from the substrate W. do. The pure water discharged from the central nozzle 44 collides with the central portion of the upper surface of the substrate W rotating at the first rinse liquid supply speed and then flows outward along the upper surface of the substrate W. DHF on the substrate W is washed away by pure water discharged from the central nozzle 44. As a result, a pure water liquid film is formed that covers the entire upper surface of the substrate W. When a predetermined time elapses after the rinse liquid valve 46 is opened, the rinse liquid valve 46 closes and the discharge of pure water is stopped.

Next, a second chemical solution supply process is performed in which SC1, which is an example of the second chemical solution, is supplied to the upper surface of the substrate W (step S5 in FIG. 11).

Specifically, in a state where the blocking member 41 is located at the liquid processing position and at least one guard 53 is located at the processing position, the second nozzle moving unit 34 moves the second chemical liquid nozzle 31. Move from the evacuation position to the processing position. After that, the second chemical liquid valve 33 opens, and the second chemical liquid nozzle 31 starts discharging SC1. Before the discharge of SC1 starts, the guard lifting unit 51 moves at least one guard 53 vertically to switch the guard 53 that catches the liquid flying outward from the substrate W. do. When a predetermined time elapses after the second chemical liquid valve 33 is opened, the second chemical liquid valve 33 closes, and discharge of SC1 is stopped. After that, the second nozzle moving unit 34 moves the second chemical liquid nozzle 31 to the retracted position.

SC1 discharged from the second chemical liquid nozzle 31 collides with the upper surface of the substrate W rotating at the second chemical liquid supply speed and then flows outward along the upper surface of the substrate W due to centrifugal force. The pure water on the substrate W is replaced by SC1 discharged from the second chemical liquid nozzle 31. As a result, the SC1 liquid film covering the entire upper surface of the substrate W is formed. When the second chemical liquid nozzle 31 is discharging SC1, the second nozzle moving unit 34 may move the liquid landing position of SC1 with respect to the upper surface of the substrate W so that it passes the central part and the outer peripheral part. , the liquid extraction position may be stopped in the central part.

Next, a second rinse liquid supply process is performed in which pure water, which is an example of a rinse liquid, is supplied to the upper surface of the substrate W (step S6 in FIG. 11).

Specifically, in a state where the blocking member 41 is located at the liquid processing position and at least one guard 53 is located at the processing position, the rinse liquid valve 46 is opened and the central nozzle 44 is opened to allow pure water. Start discharging. Before the discharge of pure water starts, the guard lifting unit 51 moves at least one guard 53 vertically to switch the guard 53 that catches the liquid flying outward from the substrate W. do. The pure water discharged from the central nozzle 44 collides with the central portion of the upper surface of the substrate W rotating at the second rinse liquid supply speed and then flows outward along the upper surface of the substrate W. SC1 on the substrate W is washed away by pure water discharged from the central nozzle 44. As a result, a pure water liquid film is formed that covers the entire upper surface of the substrate W. When a predetermined time elapses after the rinse liquid valve 46 is opened, the rinse liquid valve 46 closes and the discharge of pure water is stopped.

Next, a drying process is performed in which the substrate W is dried by rotating the substrate W (step S7 in FIG. 11).

Specifically, with at least one guard 53 positioned at the processing position, the blocking member lifting unit 43 lowers the blocking member 41 from the liquid processing position to the dry processing position. In this state, the electric motor 25 accelerates the substrate W in the rotation direction to a higher speed ( The substrate W is rotated at a high rotation speed (for example, several thousand rpm). Thereby, the liquid is removed from the substrate W, and the substrate W is dried. When a predetermined time elapses after the high-speed rotation of the substrate W begins, the electric motor 25 stops rotating. As a result, the rotation of the substrate W is stopped (step S8 in FIG. 11).

Next, an unloading process (step S9 in FIG. 11) is performed in which the substrate W is unloaded from the chamber 12.

Specifically, the blocking member lifting unit 43 raises the blocking member 41 to the retracted position, and the guard lifting unit 51 lowers all the guards 53 to the retracted position. Additionally, the gas valve 49 and the gas valve 40 are closed, and the central opening 47o of the blocking member 41 and the central opening 38o of the spin base 23 stop discharging nitrogen gas. After that, the center robot CR causes the hand Hc to enter the chamber 12. The center robot CR supports the substrate W on the spin chuck 21 with the hand Hc after the plurality of chuck pins 22 release the grip of the substrate W. After that, the center robot CR supports the substrate W with the hand Hc and causes the hand Hc to retract from the inside of the chamber 12. As a result, the processed substrate W is taken out of the chamber 12.

FIG. 12A is a cross-sectional view showing an example of the positions of the first guard 53A and the second guard 53B when the chemical solution is supplied to the substrate W. FIG. 12B is a cross-sectional view showing an example of the positions of the first guard 53A and the second guard 53B when supplying the rinse liquid to the substrate W. FIG. 12C is a cross-sectional view showing an example of the positions of the first guard 53A and the second guard 53B when drying the substrate W.

As shown in FIG. 12A, when supplying the chemical solution to the substrate W, the guard 53, that is, the first guard 53A, which is located at the outermost position among all the guards 53, is rotated while being positioned at the upper processing position. The chemical liquid is discharged toward the upper surface of the substrate (W) being treated. At this time, the second guard 53B may be disposed at an upper processing position where the second guard 53B is close to the first guard 53A, and the second guard 53B may be positioned from the first guard 53A. It may be placed in a remote evacuation position. FIG. 12A shows an example in which both the first guard 53A and the second guard 53B are disposed at the upper processing position.

If the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A is within a range that horizontally opposes the inner peripheral surface 83i of the inner peripheral ring 83, the upper processing position of the first guard 53A is 1 When supplying the chemical solution to the substrate W (first chemical supply process (step S3 in FIG. 11)) and when supplying the second chemical solution to the substrate W (second chemical supply process (step S4 in FIG. 11) ) may be different. In addition, if the first guard 53A is disposed at the upper processing position, the position of the second guard 53B is changed when supplying the first chemical liquid to the substrate W and when supplying the second chemical liquid to the substrate W. It can be different or the same.

As described above, the area of the opening formed inside the upper end 53u of the first guard 53A and the size of the outer gap Go between the chamber 12 and the partition plate 81 are determined by the first guard 53A. ) is constant regardless of the height, while when the first guard 53A is disposed at the upper processing position, the inner gap Gi between the first guard 53A and the partition plate 81 becomes the smallest. Therefore, the flow rate of gas passing through the inner gap Gi between the first guard 53A and the partition plate 81 decreases. Instead, at least one of the flow rate of gas passing through the inside of the upper end portion 53u of the first guard 53A and the flow rate of gas passing through the outer gap Go between the chamber 12 and the partition plate 81 This increases.

The flow rate of the gas passing through the inside of the upper end 53u of the first guard 53A is referred to as the "central flow rate", and the flow rate of the gas passing through the inner gap Gi between the first guard 53A and the partition plate 81 is defined as the "central flow rate". The flow rate is defined as the “inner flow rate” and the flow rate of the gas passing through the outer gap Go between the chamber 12 and the partition plate 81 is defined as the “outer flow rate”. In the state shown in FIG. 12A, the inside flow rate is less than the outside flow rate (inside flow rate <outside flow rate), and the sum of the inside flow rate and outside flow rate is less than the center flow rate (inside flow rate + outside flow rate ≤ center flow rate). However, the relationship between the central flow rate, inner flow rate, and outer flow rate is not limited to this.

FIG. 12B shows an example of the positions of the first guard 53A and the second guard 53B when the rinse liquid is supplied to the substrate W. When supplying the rinse liquid to the substrate W in at least one of the first rinse liquid supply process (step S4 in FIG. 11) and the second rinse liquid supply process (step S6 in FIG. 11), the first guard 53A is used. While positioned at the lower processing position, the rinse liquid is discharged toward the upper surface of the rotating substrate W. At this time, the second guard 53B may be disposed at the lower processing position or may be disposed at the retracted position. FIG. 12B shows an example in which both the first guard 53A and the second guard 53B are disposed at the lower processing position.

The lower processing position of the first guard 53A may be different or the same in the first rinse liquid supply process (step S4 in FIG. 11) and the second rinse liquid supply process (step S6 in FIG. 11). In addition, if the first guard 53A is placed at the lower processing position, the position of the second guard 53B is the same as the first rinse liquid supply process (step S4 in FIG. 11) and the second rinse liquid supply process (step S4 in FIG. 11). In step S6), they may be different or the same.

When the first guard 53A is placed at the lower processing position, the pressure of the inner gap Gi between the first guard 53A and the partition plate 81 is higher than when the first guard 53A is located at the upper processing position. Because the loss is reduced, the inner flow rate increases compared to when the first guard 53A is located at the upper processing position. In the state shown in FIG. 12B, the inside flow rate is less than the outside flow rate (inside flow rate ≤ outside flow rate), and the sum of the inside flow rate and outside flow rate is greater than the center flow rate (inside flow rate + outside flow rate ≥ center flow rate). However, the relationship between the central flow rate, inner flow rate, and outer flow rate is not limited to this.

FIG. 12C shows an example of the positions of the first guard 53A and the second guard 53B when drying the substrate W. When drying the substrate W in the drying process (step S7 in FIG. 11), the first guard 53A and the second guard 53B are placed at one of the upper processing position, the lower processing position, and the retraction position. You can do it. FIG. 12C shows an example in which the first guard 53A is disposed at the upper processing position and the second guard 53B is disposed at the retracted position. The state shown in FIG. 12C is different from the state shown in FIG. 12A in that the second guard 53B is disposed at the retracted position.

In the state shown in FIG. 12A, the gas that has passed through the inside of the upper end portion 53u of the first guard 53A passes through the inside and lower sides of the first guard 53A and the second guard 53B, while in FIG. 12C In the state shown, gas that has passed inside the upper end portion 53u of the first guard 53A passes between the first guard 53A and the second guard 53B. Although there is this difference, the relationship between the central flow rate, inner flow rate, and outer flow rate is the same in the state shown in FIG. 12A and the state shown in FIG. 12C. However, the relationship between the central flow rate, inner flow rate, and outer flow rate is not limited to this.

When the chemical liquid collides with the upper surface of the substrate W, a mist of the chemical liquid is generated. Even when the chemical liquid flying outward from the substrate W collides with the inner surface of the guard 53, a chemical mist is generated. When the substrate W is in the chamber 12, a downflow of clean air is formed in the chamber 12, and the exhaust duct 78 suctions the gas in the chamber 12. Accordingly, the chemical mist does not leak out of the first guard 53A through the upper end 53u of the first guard 53A, but is drawn into the exhaust duct 78. In addition, when supplying the chemical liquid to the substrate W, the first guard 53A is disposed at the upper processing position as shown in FIG. 12A and the central flow rate is increased, so that the chemical mist is more surely discharged through the exhaust duct 78. ) is absorbed within.

After supplying the chemical solution to the substrate W, a rinse solution is supplied to the substrate W. When supplying the rinse liquid to the substrate W, the first guard 53A is placed at the lower processing position as shown in FIG. 12B, and the internal flow rate is increased, so a small amount of chemical mist is released into the first guard 53A. ) Even if it leaks out of the first guard 53A through the upper part 53u of the , is sucked into the exhaust duct 78 through the inner gap Gi between the first guard 53A and the partition plate 81 or the outer gap Go between the chamber 12 and the partition plate 81.

On the other hand, when the rinse liquid is supplied to the substrate W, the central flow rate, that is, the flow rate of the gas passing inside the upper end portion 53u of the first guard 53A, decreases. When a rinse liquid is supplied to the substrate W, a mist of a rinse liquid such as pure water is generated, not a mist of a chemical liquid. Therefore, even if the rinse liquid mist leaks out of the first guard 53A through the upper part 53u of the first guard 53A, contamination of the chamber 12 or the substrate W does not occur.

Even if a small amount of chemical mist leaks out of the first guard 53A when the chemical liquid is supplied to the substrate W, when drying of the substrate W is started, all or almost all of the chemical liquid atmosphere flows into the exhaust duct 78. ) is being absorbed into the body. Even if the chemical atmosphere remained, the residual amount was extremely small. Therefore, as in the example shown in FIG. 12C, the substrate W may be dried while positioning the first guard 53A at the upper processing position. In this case, it is possible to prevent mist generated during drying of the substrate W from leaking out of the first guard 53A through the upper end 53u of the first guard 53A. If there is concern that a chemical atmosphere remains at the start of drying of the substrate W, the substrate W may be dried while positioning the first guard 53A in the lower processing position or the retraction position.

As described above, in the first embodiment, the partition plate 81 is disposed around the first guard 53A. The outer peripheral end 81o of the partition plate 81 is spaced inward from the inner peripheral surface 12i of the chamber 12, and the inner peripheral end 81i of the partition plate 81 surrounds the first guard 53A. . When the guard lifting unit 51 raises and lowers the first guard 53A, the distance from the inner peripheral end 81i of the partition plate 81 to the first guard 53A increases or decreases. As a result, the pressure loss in the path passing between the first guard 53A and the partition plate 81 can be increased or decreased.

The exhaust duct 78 draws the gas inside the first guard 53A and the gas below the partition plate 81 into the inside of the exhaust duct 78 from the upstream end 78u of the exhaust duct 78. do. The gas above the first guard 53A passes downwardly inside the upper end portion 53u of the first guard 53A and is drawn into the exhaust duct 78. The gas above the partition plate 81 passes downward through at least one of the gap between the chamber 12 and the partition plate 81 and the gap between the first guard 53A and the partition plate 81, It is drawn into the exhaust duct 78.

When the guard lifting unit 51 reduces the distance from the inner peripheral end 81i of the partition plate 81 to the first guard 53A, the pressure of the path passing between the first guard 53A and the partition plate 81 As the loss increases, the flow rate of gas passing through the inside of the upper end 53u of the first guard 53A increases. As a result, the amount of chemical mist leaking out of the first guard 53A through the inside of the upper end 53u of the first guard 53A can be reduced.

When the guard lifting unit 51 increases the distance from the inner peripheral end 81i of the partition plate 81 to the first guard 53A, the pressure of the path passing between the first guard 53A and the partition plate 81 Since the loss is reduced, the flow rate of gas passing between the first guard 53A and the partition plate 81 increases. Even if the chemical mist leaks out of the first guard 53A, the leaked mist is in the gap between the chamber 12 and the partition plate 81 and the gap between the first guard 53A and the partition plate 81. It passes downward through at least one of them and is drawn into the exhaust duct 78. Thereby, the leaked mist can be reliably removed.

Focusing on sucking the atmosphere inside the first guard 53A is important to prevent the chemical mist from leaking out of the first guard 53A. Focusing on sucking the atmosphere above the first guard 53A and the partition plate 81 is important in removing the leaked chemical mist. Therefore, balancing the exhaust, that is, changing the location where the exhaust is mainly performed, is important in reducing contamination of the substrate W and the chamber 12.

When the first guard 53A is raised and the shortest distance from the inner peripheral end 81i of the partition plate 81 to the first guard 53A is changed, the inside of the first guard 53A and the first guard 53A ) and the upper part of the partition plate 81 can be changed. Therefore, when the first guard 53A is raised and lowered as the processing of the substrate W progresses, the atmosphere at the location where the chemical mist may exist can be sucked in, thereby reducing the temperature of the substrate W and the chamber 12. Pollution can be reduced.

In this embodiment, the chemical liquid on the substrate W is replaced with a rinse liquid. When the chemical mist leaks out of the first guard 53A, the chemical atmosphere is created by the first guard 53A and the partition plate 81 when the central nozzle 44, which is an example of the rinse liquid nozzle, is discharging the rinse liquid. ) drifts upwards. When the central nozzle 44 is discharging the rinse liquid, the shortest distance from the inner peripheral edge 81i of the partition plate 81 to the first guard 53A is greater than when the chemical liquid nozzle is discharging the chemical liquid. As a result, the chemical liquid atmosphere drifting above the first guard 53A and the partition plate 81 is channeled into the gap between the chamber 12 and the partition plate 81 and the first guard 53A and the partition plate 81. ) can be sucked into at least one of the gaps between the

In this embodiment, the cylindrical outer wall 70 surrounds the first guard 53A below the partition plate 81. The gas that has passed inside the upper end portion 53u of the first guard 53A passes through the discharge hole 72 of the cylindrical outer wall 70 and the exhaust duct 78 and is discharged out of the chamber 12. The gas that has passed between the first guard 53A and the partition plate 81 also passes through the discharge hole 72 of the cylindrical outer wall 70 and the exhaust duct 78 and is discharged out of the chamber 12. Therefore, these gases are discharged out of the chamber 12 without passing through the exhaust relay hole 73 of the cylindrical outer wall 70.

On the other hand, the gas that has passed between the chamber 12 and the partition plate 81 passes through the exhaust relay hole 73 of the cylindrical outer wall 70 and flows from the outside of the cylindrical outer wall 70 to the cylindrical outer wall 70. Move to the inside of (70). Afterwards, this gas passes through the discharge hole 72 of the cylindrical outer wall 70 and the exhaust duct 78 and is discharged out of the chamber 12. Therefore, the gas around the cylindrical outer wall 70 moves from the outside of the cylindrical outer wall 70 to the inside of the cylindrical outer wall 70, and then moves from the inside of the cylindrical outer wall 70 to the cylindrical outer wall 70. Move to the outside of (70).

In this way, the gas that has passed between the chamber 12 and the partition plate 81 passes through the exhaust relay hole 73 of the cylindrical outer wall 70, and then through the discharge hole of the cylindrical outer wall 70 ( 72) and the exhaust duct 78, the path through which the gas flowing between the chamber 12 and the partition plate 81 passes is the path through the inside of the upper end 53u of the first guard 53A. The pressure loss is greater. Accordingly, the flow rate of gas passing through the inside of the upper end portion 53u of the first guard 53A and the flow rate of gas passing between the first guard 53A and the partition plate 81 can be increased.

By increasing the flow rate of gas passing through the inside of the upper end 53u of the first guard 53A, the mist of the chemical solution leaking out of the first guard 53A can be reduced. Also, even if the chemical mist leaks out of the first guard 53A, the leaked mist flows from the upper end 53u of the first guard 53A to its surroundings. The inner peripheral end 81i of the partition plate 81 is disposed closer to the first guard 53A than the outer peripheral end 81o of the partition plate 81. Therefore, by increasing the flow rate of the gas passing between the first guard 53A and the partition plate 81, the leaked chemical mist can be more reliably removed.

In this embodiment, the area of the exhaust relay hole 73 of the cylindrical outer wall 70 is smaller than the area of the exhaust hole 72 of the cylindrical outer wall 70. Gas that has passed through the inside of the upper end (53u) of the first guard (53A) and gas that has passed between the first guard (53A) and the partition plate (81) do not pass through the exhaust relay hole (73), while the gas that has passed through the chamber The gas that has passed between 12 and the partition plate 81 passes through the exhaust relay hole 73 and then passes through the discharge hole 72 and the exhaust duct 78. Therefore, the pressure loss in the path through which the gas flowing between the chamber 12 and the partition plate 81 passes is large. As a result, the flow rate of gas passing through the inside of the upper end portion 53u of the first guard 53A and the flow rate of gas passing between the first guard 53A and the partition plate 81 can be further increased.

In this embodiment, the exhaust relay hole 73 through which the gas flowing from the outside of the cylindrical outer wall 70 to the inside of the cylindrical outer wall 70 passes is a through hole penetrating the cylindrical body 71, and a through hole. It is formed by a slide cover 75 that covers a part of. When the slide cover 75, which is an example of a movable cover, is moved relative to the cylindrical body 71, the opening degree of the exhaust relay hole 73 changes, and the pressure loss of the exhaust relay hole 73 increases or decreases. Thereby, the balance of the exhaust can be changed. That is, exhaust gas passing through the inside of the upper end 53u of the first guard 53A, exhaust gas passing between the first guard 53A and the partition plate 81, and the chamber 12 and the partition plate 81. You can change the balance of the exhaust that passes through it.

In this embodiment, the horizontal portion 84 of the partition plate 81 divides the space around the first guard 53A in the chamber 12 up and down, and the vertical portion of the partition plate 81 ( 85) extends downward from the horizontal portion 84. The inner peripheral surface of the vertical portion 85 surrounds the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A when viewed in plan. When the first guard 53A is moved to the upper processing position, the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A is disposed inside the vertical portion 85, and the inner peripheral surface of the vertical portion 85 and face horizontally.

When the first guard 53A is disposed at the upper processing position, the distance from the inner peripheral edge 81i of the partition plate 81 to the first guard 53A is the outer peripheral surface 64 of the first guard 53A. It is smallest between the vertical portion 65 and the inner peripheral surface of the vertical portion 85. In other words, when the first guard 53A is disposed at the upper processing position, the radial direction from the inner peripheral surface of the vertical portion 85 to the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A The distance corresponds to the shortest distance from the inner peripheral edge 81i of the partition plate 81 to the first guard 53A. Therefore, the pressure loss in the path passing between the first guard 53A and the partition plate 81 is mainly from the inner peripheral surface of the vertical portion 85 to the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A. Depends on the radial distance to

The cross section of the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A and the cross section of the inner peripheral surface of the vertical portion 85 are both vertical. Additionally, since the vertical portion 85 extends downward from the horizontal portion 84, the lower end of the inner peripheral surface of the vertical portion 85 is disposed below the horizontal portion 84. In other words, the inner peripheral surface of the vertical portion 85 has a certain length in the vertical direction. Therefore, even if the position of the first guard 53A in the vertical direction is not precisely controlled, the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A is horizontally opposed to the inner peripheral surface of the vertical portion 85. This allows the pressure loss of the path passing between the first guard 53A and the partition plate 81 to be easily adjusted.

In this embodiment, the inner peripheral ring 83 including the horizontal portion 84 and the vertical portion 85 is supported on the support plate 82. The inner peripheral ring (83) is movable in the radial direction with respect to the support plate (82). When the inner peripheral ring 83 is moved radially with respect to the support plate 82, the inner peripheral ring 83 moves radially with respect to the first guard 53A, thereby forming the first guard from the inner peripheral surface of the vertical portion 85. The radial distance to the vertical portion 65 of the outer peripheral surface 64 of (53A) changes. Therefore, the shortest distance from the inner peripheral end 81i of the partition plate 81 to the first guard 53A can be changed, thereby increasing the pressure loss in the path passing between the first guard 53A and the partition plate 81. Or it can be reduced.

Next, the second embodiment will be described.

The main difference between the second embodiment and the first embodiment is that three guards 53 are installed on one processing cup 52.

FIG. 13 is a cross-sectional view showing a vertical cross-section of the processing cup 52 provided in the substrate processing apparatus 1 according to the second embodiment of the present invention. In FIG. 13, configurations equivalent to those shown in FIGS. 1 to 12C above are given the same reference numerals as in FIG. 1, etc., and their descriptions are omitted.

The three guards 53 surround the spin chuck 21 in a concentric circle shape. The outermost guard 53 is the first guard 53A, and the guard 53 inside the first guard 53A is the second guard 53B, and the guard 53 inside the second guard 53B (53) is the third guard 53C. The shape of the second guard 53B is the same as the first guard 53A according to the first embodiment. The shape of the third guard 53C is the same as the second guard 53B according to the first embodiment. That is, the second embodiment is similar to the first embodiment in that the additional guard 53 (the first guard 53A according to the second embodiment) is disposed outside the first guard 53A according to the first embodiment. It is different from the shape.

The ceiling portion 60 of the first guard 53A has a cylindrical inclined portion 61 that extends diagonally upward toward the rotation axis A1, and is horizontal from the top of the inclined portion 61 toward the rotation axis A1. It includes a circular horizontal portion 62 extending to. The ceiling portion 60 of the first guard 53A may include a circular bent portion 63 that protrudes downward from the inner peripheral edge of the horizontal portion 62 corresponding to the inner peripheral edge of the ceiling portion 60.

The cylindrical portion 54 of the first guard 53A includes a cylindrical upper vertical portion 55 extending vertically downward from the ceiling portion 60, and a base ring installed at the lower end of the upper vertical portion 55 ( 57). The inner diameter of the upper end 53u of the first guard 53A is larger than the diameter of the substrate W and larger than the outer diameter of the spin base 23. FIG. 13 shows an example where the inner diameter of the upper end portion 53u of the first guard 53A is equal to the inner diameter of the upper end portion of the second guard 53B and is smaller than the inner diameter of the upper end portion of the third guard 53C.

The guard lifting unit 51 (see FIG. 3) individually lifts and lowers the first guard 53A, the second guard 53B, and the third guard 53C in the vertical direction between the upper processing position and the retraction position. I order it. FIG. 13 shows an example in which the first guard 53A, the second guard 53B, and the third guard 53C are disposed at the upper processing position. When the first guard 53A is placed at the upper processing position, the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A is horizontal with the inner peripheral surface 83i of the inner peripheral ring 83 at intervals in the radial direction. A cylindrical inner gap Gi facing each other and extending vertically is formed between the first guard 53A and the inner peripheral ring 83. As a result, the pressure loss in the path passing between the first guard 53A and the partition plate 81 increases. Therefore, the substrate processing apparatus 1 according to the second embodiment can exhibit the same effect as the substrate processing apparatus 1 according to the first embodiment.

other embodiments

The present invention is not limited to the content of the above-described embodiment, and various changes are possible.

For example, the chemical solution may be supplied to the lower surface of the substrate W rather than the upper surface of the substrate W. Alternatively, the chemical solution may be supplied to both the upper and lower surfaces of the substrate W. In this case, the chemical solution can be discharged through the lower nozzle 35.

When discharging the rinse liquid toward the substrate W, the first guard 53A is not placed at the lower processing position, and after stopping the discharge of the rinse liquid, the first guard 53A is placed at the lower processing position. You can do it.

The spin chuck 21 is not limited to a mechanical chuck that contacts the plurality of chuck pins 22 to the outer peripheral surface of the substrate W, but spins the back surface (lower surface) of the substrate W, which is a non-device formation surface. It may be a vacuum chuck that holds the substrate W horizontally by adsorbing it to the upper surface 23u of the base 23. The spin chuck 21 may be a Bernoulli chuck that holds the substrate W horizontal with an attractive force generated by Bernoulli's theorem, or it may be an electrostatic chuck that holds the substrate W horizontal with electrical force.

The opening degree of the exhaust relay hole 73 of the cylindrical outer wall 70 may be constant. In this case, the slide cover 75, which is an example of a movable cover, may be omitted.

The exhaust relay hole 73 may be omitted from the cylindrical outer wall 70. In this case, a gap may be formed between the upper end of the cylindrical outer wall 70 and the lower surface of the partition plate 81, or between the lower end of the cylindrical outer wall 70 and the floor surface of the chamber 12.

The partition plate 81 may be a flat plate whose thickness is constant from the outer peripheral edge 81o of the partition plate 81 to the inner peripheral edge 81i of the partition plate 81. That is, the inner peripheral ring 83 may be omitted, and the inner peripheral end of the support plate 82 may be extended toward the first guard 53A. In this case, the upper processing position of the first guard 53A is such that the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A is the support plate 82 corresponding to the inner peripheral edge of the support plate 82. It may be in a position horizontally facing the inner circumferential surface of .

At least one of the cylindrical outer wall 70 and the partition plate 81 may be omitted.

When the inner peripheral ring 83 is divided into a plurality of split rings 83r arranged in the circumferential direction, as shown in FIG. 14, an upstream end 78u of the exhaust duct 78 is formed in the circumferential direction among the plurality of split rings 83r. ) may be longer in the downward direction than the vertical portion 85 of the other split rings 83r (see white arrow). Instead of or in addition to this, as shown in FIG. 15, the vertical portion 85 of the split ring 83r is closest to the upstream end 78u of the exhaust duct 78 in the circumferential direction among the plurality of split rings 83r. ) may be radially closer to the outer peripheral surface 64 of the first guard 53A than the vertical portion 85 of the other split ring 83r (see white arrow).

The suction force that draws gas toward the exhaust duct 78 weakens as it moves away from the exhaust duct 78 in the circumferential direction. By increasing the pressure loss in the path passing between the first guard 53A and the partition plate 81, this decrease in suction force is alleviated. However, if the pressure loss in this path is increased around the entire circumference of the first guard 53A, the exhaust duct 78 passes through the inner gap Gi between the first guard 53A and the partition plate 81. The flow rate of the gas sucked in decreases.

By lengthening the vertical portion 85 of the split ring 83r downward only in the vicinity of the exhaust duct 78, the pressure loss in the path passing between the first guard 53A and the partition plate 81 is reduced to the exhaust duct ( It can only be increased near 78). Likewise, by bringing the vertical portion 85 of the split ring 83r radially closer to the outer peripheral surface 64 of the first guard 53A only in the vicinity of the exhaust duct 78, the first guard 53A and the partition plate ( 81), the pressure loss in the path passing through can be increased only in the vicinity of the exhaust duct 78. As a result, the decrease in the flow rate of the gas that passes through the inner gap Gi and is sucked into the exhaust duct 78 can be reduced, while the decrease in the suction force depending on the circumferential distance from the exhaust duct 78 can be reduced. there is.

In addition, when dividing the inner peripheral ring 83 into three or more split rings 83r arranged in the circumferential direction, if not all split rings 83r, two or more split rings 83r are divided into at least two of FIGS. 14 and 15. It may be formed to appear on one side. The inner peripheral ring 83 may be divided into equal parts, or it does not need to be divided into equal parts. In the latter case, the split ring 83r, which is shortest in the circumferential direction, may be disposed at the position closest to the upstream end 78u of the exhaust duct 78 in the circumferential direction. In this way, when at least one of the structure shown in FIG. 14 and the structure shown in FIG. 15 is adopted, the pressure loss in the path passing between the first guard 53A and the partition plate 81 can be finely adjusted. easy.

At least one of the structure shown in FIG. 14 and the structure shown in FIG. 15 may be adopted without dividing the inner peripheral ring 83. Specifically, in the vertical portion 85 of the inner peripheral ring 83, only the portion closest to the upstream end 78u of the exhaust duct 78 in the circumferential direction and its vicinity may be lengthened in the downward direction. Instead of or in addition to this, only the portion closest to the upstream end 78u of the exhaust duct 78 in the circumferential direction of the vertical portion 85 of the inner ring 83 and its vicinity is provided with the first guard 53A. You may approach the outer peripheral surface (64) in the radial direction.

In both cases where the inner ring 83 is divided and when it is not divided, the vertical length of the vertical portion 85 of the inner ring 83 is brought closer to the upstream end 78u of the exhaust duct 78. It may be increased stepwise or continuously, and the radial distance from the inner peripheral surface of the vertical portion 85 of the inner peripheral ring 83 to the vertical portion 65 of the outer peripheral surface 64 of the first guard 53A (Figure 6 The size (corresponding to D1) of the inner gap Gi shown in may be gradually or continuously reduced as it approaches the upstream end 78u of the exhaust duct 78. In this way, the pressure loss in the path passing between the first guard 53A and the partition plate 81 can be changed stepwise or continuously.

As shown in FIG. 16, the angle formed between the inner surface of the protrusion 92 of the cylindrical outer wall 70 and the inner peripheral surface 91i of the cylindrical portion 91 of the cylindrical outer wall 70 in a horizontal cross section is 90 degrees. It is acceptable to use a value exceeding . In the horizontal cross section shown in FIG. 16, the tangent line at the circumferential end E1 of the inner peripheral surface 91i of the cylindrical portion 91 is defined as the tangent line TL1. The angle formed by the inner surface 93i of the side wall 93 with respect to the tangent line TL1 may increase stepwise or continuously as it approaches the outermost wall 94. 16, the angle formed between the inner surface of the protrusion 92 and the inner peripheral surface 91i of the cylindrical portion 91 is about 140 degrees, and the angle formed by the inner surface 93i of the side wall 93 with respect to the tangent TL1 is, An example is shown where the angle increases from about 30 degrees (angle θ11 shown in FIG. 16) to about 40 degrees (angle θ12 shown in FIG. 16) as it approaches the outermost wall 94.

All of the side walls 93 may be formed in this way, or only a few side walls 93 may be formed in this way. For example, among the pair of protrusions 92, only the pair of side walls 93 of the protrusion 92 on the side closer to the exhaust duct 78 may be formed in this way. By forming at least one side wall 93 in this way, the resistance received from the protrusion 92 by the gas flowing between the first guard 53A and the cylindrical outer wall 70 toward the exhaust duct 78 can be reduced. , it is possible to reduce the decrease in suction force depending on the circumferential distance from the exhaust duct 78.

As shown in FIG. 17, in a horizontal cross section, the angle formed between the inner peripheral surface 78i of the exhaust duct 78 and the inner peripheral surface 91i of the cylindrical portion 91 of the cylindrical outer wall 70 is an obtuse angle (than 90 degrees). A value larger than 180 degrees may be used. In the horizontal cross section shown in FIG. 17, the tangent at the end E2 in the circumferential direction of the inner peripheral surface 91i of the cylindrical portion 91 is defined as the tangent TL2. Even if the angle formed by the inner peripheral surface 78i of the exhaust duct 78 with respect to the tangent line TL2 increases stepwise or continuously as the distance along the exhaust duct 78 moves away from the upstream end 78u of the exhaust duct 78. do. 17 shows that the angle formed between the inner peripheral surface 78i of the exhaust duct 78 and the inner peripheral surface 91i of the cylindrical portion 91 is about 110 degrees, and the inner peripheral surface 78i of the exhaust duct 78 with respect to the tangent line TL2 is approximately 110 degrees. The angle formed increases from about 75 degrees (angle θ21 shown in FIG. 17) to about 80 degrees (angle shown in FIG. 17) as it moves away from the upstream end 78u of the exhaust duct 78 along the exhaust duct 78. (θ22)) shows an example.

In the horizontal cross section shown in FIG. 17, the inner peripheral surface 78i of the exhaust duct 78 intersects the cylindrical outer wall 70 at two intersection points. The inner peripheral surface 78i of the exhaust duct 78 may be formed as above at both of these two intersection points, or the inner peripheral surface 78i of the exhaust duct 78 may be formed as above at only one of these two intersection points. . By forming the inner peripheral surface 78i of the exhaust duct 78 as described above at at least one of the two intersection points, the gas flowing between the first guard 53A and the cylindrical outer wall 70 toward the exhaust duct 78 is prevented. , the resistance received from the cylindrical portion 91 can be reduced.

In the example shown in FIG. 17, the rotation direction Dr of the substrate W is counterclockwise, and the gas flowing clockwise between the first guard 53A and the cylindrical outer wall 70 is on the left side. It passes through the intersection point (the portion surrounded by a rectangle with dashed-dotted lines in FIG. 17) and is drawn into the exhaust duct 78. Therefore, in the structure shown in FIG. 17, the resistance applied to the gas flowing in the direction opposite to the rotation direction Dr of the substrate W can be reduced, and the gas flowing in this direction can be efficiently routed to the exhaust duct 78. It can be aspirated.

The substrate processing apparatus 1 is not limited to an apparatus for processing a disk-shaped substrate W, and may be an apparatus for processing a polygonal substrate W.

Two or more of all of the above configurations may be combined. Two or more of all the above processes may be combined.

The spin chuck 21 is an example of a substrate holding unit. The electric motor 25 is an example of a substrate rotation unit. The first chemical liquid nozzle 27 is an example of a chemical liquid nozzle. The second chemical liquid nozzle 31 is an example of a chemical liquid nozzle. The lower nozzle 35 is an example of a rinse liquid nozzle. The center nozzle 44 is an example of a rinse liquid nozzle. The first guard 53A is an example of a guard. The slide cover 75 is an example of a movable cover.

The embodiments of the present invention have been described in detail, but these are only specific examples used to clarify the technical content of the present invention, and the present invention should not be construed as limited to these specific examples, and the spirit and The scope is limited only by the appended claims.

Claims (10)

a substrate holding unit that holds the substrate horizontally;
a substrate rotation unit that rotates the substrate held in the substrate holding unit about a vertical rotation axis passing through a central portion of the substrate;
a chemical liquid nozzle that discharges a chemical liquid toward the substrate held in the substrate holding unit;
It includes an upper end surrounding the substrate held in the substrate holding unit when viewed in plan, and a cylindrical inclined portion extending obliquely upward toward the upper end, and scattering outward from the substrate held in the substrate holding unit. A barrel-shaped guard that catches a liquid,
a chamber including an inner peripheral surface surrounding the guard;
a partition plate including an outer peripheral end spaced inward from the inner peripheral surface of the chamber and an inner peripheral end surrounding the guard, and dividing the space around the guard in the chamber into upper and lower sections;
a guard lifting unit that changes the shortest distance from the end face of the inner peripheral end of the partition plate to the end face of the guard by raising and lowering the guard;
an exhaust duct including an upstream end disposed below the partition plate in the chamber, sucking gas inside the guard and gas below the partition plate into the upstream end, and exhausting the gas outside the chamber;
an inner peripheral surface and an outer peripheral surface surrounding the guard in a space below the partition plate in the chamber, an exhaust hole open at the inner peripheral surface and an outer peripheral surface through which gas discharged from the chamber through the exhaust duct passes; A substrate processing apparatus comprising a cylindrical outer wall that is open on the inner peripheral surface and the outer peripheral surface and includes an exhaust relay hole through which gas moving from the outside of the outer peripheral surface to the inside of the inner peripheral surface passes. In claim 1,
a rinse liquid nozzle that discharges rinse liquid toward the substrate held in the substrate holding unit;
By controlling the guard lifting unit, the shortest distance when the chemical liquid on the substrate is replaced with the rinse liquid discharged from the rinse liquid nozzle is made larger than the shortest distance when the chemical liquid nozzle is discharging the chemical liquid. A substrate processing device further comprising a control device. In claim 1,
The substrate processing apparatus, wherein the exhaust relay hole of the cylindrical outer wall is smaller than the exhaust hole of the cylindrical outer wall. In claim 1,
The cylindrical outer wall includes a cylindrical body including an inner peripheral surface and an outer peripheral surface surrounding the guard in a space below the partition plate in the chamber, a through hole opening in the inner peripheral surface and an outer peripheral surface, and a portion of the through hole. It is held on the cylindrical body in a covered state and includes a movable cover that is movable with respect to the cylindrical body,
The substrate processing apparatus wherein the exhaust relay hole is formed by the through hole of the cylindrical body and the movable cover, and the opening degree changes depending on the position of the movable cover with respect to the cylindrical body. a substrate holding unit that holds the substrate horizontally;
a substrate rotation unit that rotates the substrate held in the substrate holding unit about a vertical rotation axis passing through a central portion of the substrate;
a chemical liquid nozzle that discharges a chemical liquid toward the substrate held in the substrate holding unit;
It includes an upper end surrounding the substrate held in the substrate holding unit when viewed in plan, and a cylindrical inclined portion extending obliquely upward toward the upper end, and scattering outward from the substrate held in the substrate holding unit. A barrel-shaped guard that catches a liquid,
a chamber including an inner peripheral surface surrounding the guard;
a partition plate including an outer peripheral end spaced inward from the inner peripheral surface of the chamber and an inner peripheral end surrounding the guard, and dividing the space around the guard in the chamber into upper and lower sections;
a guard lifting unit that changes the shortest distance from the end face of the inner peripheral end of the partition plate to the end face of the guard by raising and lowering the guard;
It includes an upstream end disposed below the partition plate in the chamber, and has an exhaust duct for sucking gas inside the guard and gas below the partition plate into the upstream end and discharging it out of the chamber. ,
The outer peripheral surface of the guard includes a cylindrical vertical portion having a vertical straight cross-section,
The partition plate includes a horizontal portion that divides the space around the guard in the chamber into upper and lower portions, and a cylindrical vertical portion extending downward from the horizontal portion,
The inner peripheral surface of the vertical portion of the partition plate has a vertical straight cross-section and surrounds the vertical portion of the guard when viewed in plan,
When the guard is disposed at an upper processing position where the vertical portion of the guard horizontally faces the inner peripheral surface of the vertical portion, the distance from the inner peripheral edge of the partition plate to the guard is equal to the vertical portion of the guard and the The smallest substrate processing device between the inner peripheral surfaces of the vertical portion. In claim 5,
The partition plate includes an inner circumferential ring including the horizontal portion and the vertical portion of the partition plate, and a support plate supporting the inner circumferential ring,
The substrate processing apparatus, wherein the inner ring is movable relative to the support plate and the guard in a radial direction perpendicular to the rotation axis. In claim 5,
The vertical length of the opposing range where the inner peripheral surface of the vertical portion of the partition plate and the vertical portion of the outer peripheral surface of the guard face each other horizontally is located at the upstream end of the exhaust duct in the circumferential direction around the rotation axis. Substrate processing equipment is increasing as we get closer. In claim 5,
The distance from the inner peripheral surface of the vertical portion of the partition plate to the vertical portion of the outer peripheral surface of the guard in the radial direction perpendicular to the rotation axis is the distance of the exhaust duct in the circumferential direction around the rotation axis. The substrate processing apparatus decreases as it approaches the upstream end. maintaining the substrate horizontally and rotating it about a vertical rotation axis passing through the center of the substrate;
discharging a chemical solution toward the rotating substrate;
A step of catching the chemical liquid flying outward from the substrate into a cylindrical guard including an upper end surrounding the substrate when viewed in plan, and a cylindrical inclined part extending obliquely upward toward the upper end;
A partition that includes an outer circumferential end spaced inward from the inner circumferential surface of the chamber surrounding the gas inside the guard and an inner circumferential end surrounding the guard, and divides the space around the guard in the chamber into upper and lower parts. suctioning into the upstream end of an exhaust duct disposed below the plate and discharging it out of the chamber;
suctioning the gas below the partition plate into the upstream end of the exhaust duct and discharging it out of the chamber;
After stopping the discharge of the chemical solution to the substrate, lowering the guard to increase the shortest distance from the end surface of the inner peripheral end of the partition plate to the end surface of the guard;
The gas discharged from the chamber through the exhaust duct passes through discharge holes of the cylindrical outer wall opened on the inner and outer peripheral surfaces of the cylindrical outer wall surrounding the guard in the space below the partition plate within the chamber. The steps and
A step in which gas moving from the outside of the outer peripheral surface of the cylindrical outer wall to the inside of the inner peripheral surface of the cylindrical outer wall passes through exhaust relay holes of the cylindrical outer wall opened at the inner and outer peripheral surfaces of the cylindrical outer wall. Including, a substrate processing method. maintaining the substrate horizontally and rotating it about a vertical rotation axis passing through the center of the substrate;
discharging a chemical solution toward the rotating substrate;
A step of catching the chemical liquid flying outward from the substrate into a cylindrical guard including an upper end surrounding the substrate when viewed in plan, and a cylindrical inclined part extending obliquely upward toward the upper end;
A partition that includes an outer circumferential end spaced inward from the inner circumferential surface of the chamber surrounding the gas inside the guard and an inner circumferential end surrounding the guard, and divides the space around the guard in the chamber into upper and lower parts. suctioning into the upstream end of an exhaust duct disposed below the plate and discharging it out of the chamber;
suctioning the gas below the partition plate into the upstream end of the exhaust duct and discharging it out of the chamber;
After stopping the discharge of the chemical solution to the substrate, lowering the guard, thereby increasing the shortest distance from the end surface of the inner peripheral end of the partition plate to the end surface of the guard,
The outer peripheral surface of the guard includes a cylindrical vertical portion having a vertical straight cross-section,
The partition plate includes a horizontal portion that divides the space around the guard in the chamber into upper and lower portions, and a cylindrical vertical portion extending downward from the horizontal portion,
The inner peripheral surface of the vertical portion of the partition plate has a vertical straight cross-section and surrounds the vertical portion of the guard when viewed in plan,
When the guard is disposed at an upper processing position where the vertical portion of the guard horizontally faces the inner peripheral surface of the vertical portion, the distance from the inner peripheral edge of the partition plate to the guard is equal to the vertical portion of the guard and the A method of processing a substrate that is the smallest between the inner peripheral surfaces of the vertical portion.

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