CN218568777U - Etching equipment - Google Patents

Abstract

The application provides an etching equipment, including the cavity wall, medium window and first division board, cavity wall and medium window form the cavity, in order to treat the sculpture structure in the cavity and carry out the sculpture, the cavity wall has the opening, the opening is used for first division board to follow the opening along the first direction slip-in cavity, make first division board and cavity wall form the sub-chamber, thus, when etching for a long time in the sub-chamber, only the lower surface of first division board is contaminated, the medium window is because the protection of the first division board in its below is not contaminated, only need to change or wash first division board can, and, when changing first division board, can be through the opening on the cavity wall with first division board roll-off, easy operation is convenient, the change time has been reduced, can improve output.

Description

Etching equipment

Technical Field

The application relates to the field of etching, in particular to etching equipment.

Background

Etching is a process of selectively etching or stripping a surface of a substrate or a surface-covering film by chemical or physical means. At present, dry etching occupies an absolute mainstream position in semiconductor etching, and the market proportion exceeds 90%. Meanwhile, plasma etching is a main etching method used in wafer manufacturing, and capacitive plasma etching (CCP) and inductive plasma etching (ICP) are two commonly used plasma etching methods. With the continuous development of current integrated circuit technology, the size of the core devices constituting the chip is continuously reduced, and the processing and manufacturing of the chip become finer and finer. Atomic Layer Etching (ALE) can accurately control the Etching depth, and becomes a future technology upgrading trend.

The etching equipment is expected to be the first to finish domestic replacement as the medium strength of semiconductor equipment. The semiconductor equipment is mainly applied to semiconductor manufacturing and sealing and testing processes, and is the foundation and core of the semiconductor industry. With the scaling and structural complication of semiconductor manufacturing processes, the kinds and technical difficulties of semiconductor etching equipment are increasing. From the domestic market, the etcher, especially the medium etcher, is the most advantageous semiconductor equipment field in China, and is also one of the most important semiconductor equipment with the highest domestic substitution ratio.

In the etching equipment, the etching equipment comprises a cavity and a medium window positioned at the top of the cavity, when etching is carried out in the cavity, the lower surface of the medium window is easily polluted, so that particles in the cavity are increased, the product yield is influenced, and the etching uniformity is influenced due to the fact that the airflow and the plasma in the cavity are not uniformly distributed, so that the medium window needs to be cleaned or replaced regularly. In the prior art, the medium window is often cleaned or replaced by using a cleaning menu, equipment is started to clean the medium window in one mode, but the cleaning effect is general, the occupied time is long, and the yield is influenced; one way is to disassemble the dielectric window for cleaning or replacement, but the period is long, the cost is high, the replacement is difficult, the downtime is long, and the yield is influenced; there is also a way to replace the air intake nozzle, coil, etc., but the cleaning effect is general, the time is long, and the yield is affected.

SUMMERY OF THE UTILITY MODEL

In view of this, an object of the present application is to provide an etching apparatus, when replacing a first isolation plate, the first isolation plate can be slid out through an opening on a cavity wall, the operation is simple and convenient, the replacement time is reduced, and the yield can be improved. The specific scheme is as follows:

the application provides etching equipment, which comprises a cavity wall, a dielectric window and a first isolation plate;

the cavity wall and the dielectric window form a chamber;

the cavity wall has an opening; the opening is used for sliding the first isolation plate into the chamber from the opening along a first direction, so that the first isolation plate and the chamber wall form a sub-chamber.

Optionally, the etching apparatus further comprises a slide rail;

the sliding rail is installed on the medium window or the first isolation plate, the sliding rail is connected with the first isolation plate in a sliding mode through the sliding rail along a first direction, and the first isolation plate slides into the cavity from the opening along the first direction through the sliding rail.

Optionally, the first separator plate has a seal groove with a seal ring therein for sealing the opening when the first separator plate slides from the opening into the chamber in a first direction.

Optionally, the extending direction of the sealing ring is perpendicular to the first direction.

Optionally, the dielectric window has a first through hole, and a nozzle is disposed in the first through hole for introducing gas; the first separator plate has a plurality of second through holes.

Optionally, when the first partition plate slides into the chamber from the opening along a first direction, the lower surface of the dielectric window is attached to the upper surface of the first partition plate, and along a stacking direction of the first partition plate and the dielectric window, a projection of the first through hole covers a projection of the plurality of second through holes.

Alternatively, the material of the first separator may be ceramic or quartz.

Optionally, the thickness of the first spacer plate is less than the thickness of the dielectric window.

Optionally, the etching apparatus further includes a second isolation plate;

the second division board is located in the sub-chamber for with sub-chamber partition is last cavity and lower cavity, go up the cavity and communicate between the cavity, the lower cavity has the strutting arrangement who is used for placing the slide glass.

Optionally, the etching apparatus further comprises a heating device and a temperature sensor;

the heating device is positioned on one side of the dielectric window, which is far away from the first isolation plate, and is used for heating the dielectric window;

the temperature sensors are located on the periphery of the first isolation plate and used for detecting the temperature of the first isolation plate.

The embodiment of the application provides an etching equipment, including the cavity wall, medium window and first division board, cavity wall and medium window form the cavity, in order to treat the sculpture structure in the cavity and carry out the sculpture, the cavity wall has the opening, the opening is used for first division board to follow the opening and slide into the cavity along the first direction, make first division board and cavity wall form the subchamber, thus, when etching for a long time in the subchamber, only the lower surface of first division board is contaminated, the medium window is not contaminated because the protection of the first division board below it, only need to change or wash first division board can, and, when changing first division board, can be through the opening on the cavity wall with first division board roll-off, easy operation is convenient, change time has been reduced, can improve output.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 shows a schematic structural diagram of an etching apparatus provided in an embodiment of the present application;

FIG. 2 is a schematic structural diagram of another etching apparatus provided in an embodiment of the present application;

FIG. 3 is a schematic structural diagram of another etching apparatus provided in an embodiment of the present application;

fig. 4 is a top view of another etching apparatus provided in an embodiment of the present application.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways than those described herein, and it will be apparent to those of ordinary skill in the art that the present application is not limited by the specific embodiments disclosed below.

For convenience of understanding, an etching apparatus provided in an embodiment of the present application is described in detail below with reference to the accompanying drawings.

An embodiment of the present application provides an etching apparatus, which may be an ALE apparatus or other etching apparatus, and is shown in fig. 1, which is a schematic structural diagram of the etching apparatus provided in the embodiment of the present application, and includes a cavity wall 101, a dielectric window 102, and a first isolation plate 103.

The cavity wall 101 and the dielectric window 102 form a cavity 104, a contact surface of the cavity wall 101 and the dielectric window 102 can be sealed by a sealing ring, so that a structure to be etched is etched by using plasma in the cavity, the structure to be etched can be a slide glass or a wafer, and the like, and the dielectric window 102 can be made of insulating materials such as quartz, ceramics, silicon carbide, and the like.

The cavity wall 101 is provided with the opening 105, the opening 105 is used for enabling the first isolation plate 103 to slide into the cavity 104 from the opening 105 along the first direction, and the first isolation plate 103 and the cavity wall 101 form a sub-cavity, so that only the lower surface of the first isolation plate 103 is polluted when the first isolation plate 103 is etched in the sub-cavity for a long time, the dielectric window 102 is not polluted due to the protection of the first isolation plate 103 below the dielectric window, and only the first isolation plate 103 needs to be replaced or cleaned, moreover, when the first isolation plate 103 is replaced, the first isolation plate 103 can slide out through the opening 105 in the cavity wall 101, the operation is simple and convenient, the replacement time is shortened, and the yield can be improved.

In the embodiment of the present application, the material of the first isolation plate 103 may be ceramic or quartz, and the thickness of the first isolation plate 103 may be smaller than the thickness of the dielectric window 102, for example, the thickness of the first isolation plate 103 may be in a range of 5mm to 15mm, and the thickness of the dielectric window 102 may be in a range of 40mm to 80mm, so that the weight of the first isolation plate 103 is lighter relative to the weight of the dielectric window 102, which is convenient for disassembly and transportation, and improves the replacement efficiency.

In this embodiment of the present application, the etching apparatus may further include a slide rail 106, where the slide rail 106 may be mounted on the dielectric window 102, and may also be mounted on the first isolation plate 103, as shown in fig. 2, for a structural schematic view of another etching apparatus provided in this embodiment of the present application, the slide rail 106 is located on the first isolation plate 103, the slide rail 106 is along the first direction, the dielectric window 102 and the first isolation plate 103 are slidably connected by the slide rail 106, and the first isolation plate 103 slides into the chamber from the opening 105 along the first direction through the slide rail 106. Like this, can conveniently pull through slide rail 106 and change first division board 103, when first division board 103 is polluted and needs to wash, can remove the interior vacuum state of cavity, will fix the screw of first division board 103 and demolish, take first division board 103 out, change or wash, convenient operation, raise the efficiency. The replaced first separator 103 can be cleaned for reuse and to reduce particle contamination, thereby protecting the dielectric window 102 from contamination, reducing maintenance cycle and cost, and increasing yield. Of course, the etching apparatus may not include the slide rail 106, and the first isolation plate 103 and the dielectric window 102 may be embedded into each other through a slot, so that the first isolation plate 103 slides into the chamber along the first direction, which is not limited herein.

In this embodiment, the first isolation plate 103 may have a sealing groove, and the sealing ring 107 is disposed in the sealing groove, so as to seal the opening 105 and realize side vacuum sealing when the first isolation plate 103 slides into the chamber from the opening 105 along the first direction, so that the sub-chamber is kept in a vacuum state, and the product yield is improved.

In the embodiment of the present application, the extending direction of the sealing ring may be perpendicular to the first direction, for example, the first isolation plate 103 is a rectangular parallelepiped structure, one side surface of the first isolation plate 103 is perpendicular to the first direction, the sealing ring is located on the side surface, in other words, the extending direction of the sealing ring is consistent with the extending direction of the opening 105, and the extending direction of the opening 105 is perpendicular to the first direction, so that the extending direction of the sealing ring is perpendicular to the first direction, and the sealing ring can seal the opening 105 when the first isolation plate 103 slides into the chamber; the extending direction of the sealing ring may not be perpendicular to the first direction, for example, the first isolation plate 103 is a disc-shaped structure, and the sealing ring is located on the side surface of the first isolation plate 103, and the sealing ring is an arc-shaped structure to seal the opening 105.

In the embodiment of the present application, referring to fig. 3, for a schematic structural diagram of another etching apparatus provided in the embodiment of the present application, when the first isolation plate 103 slides into the chamber from the opening 105 along the first direction, the dielectric window 102 has a first through hole 108, and a nozzle is disposed in the first through hole 108 for introducing gas, specifically, a reaction gas and a purge gas may be supplied into the chamber for subsequent formation of plasma to etch the slide. The first partition plate 103 has a plurality of second through holes 109 for introducing the reaction gas and the purge gas into the sub-chambers, and the plurality of second through holes 109 may be uniformly distributed to improve uniformity of the gas in the sub-chambers, and the number of the second through holes 109 is shown as two in fig. 3.

In this embodiment, when the first isolation plate 103 slides into the chamber from the opening 105 along the first direction, a certain interval may be provided between the first isolation plate 103 and the dielectric window 102, and the first isolation plate and the dielectric window 102 may also be tightly attached, at this time, the lower surface of the dielectric window 102 and the upper surface of the first isolation plate 103 are attached, and along the stacking direction of the first isolation plate 103 and the dielectric window 102, the projection of the first through hole 108 covers the projections of the plurality of second through holes 109, so that both the upper and lower surfaces of the first isolation plate 103 are in a vacuum state, and cannot bear a large atmospheric pressure, and the first isolation plate 103 is prevented from being cracked, and the first isolation plate 103 can also better protect the dielectric window 102 from being contaminated, and can further prevent the dielectric window 102 from being contaminated.

In this embodiment, the etching apparatus further includes a second isolation plate 110, the second isolation plate 110 is located in the sub-chamber and is used to divide the sub-chamber into an upper chamber 1041 and a lower chamber 1042, a through hole penetrating along a thickness direction of the second isolation plate 110 is provided to communicate the upper chamber 1041 and the lower chamber 1042, the lower chamber has a supporting device 112 for placing a slide 111, and the slide 111 may be a single element slide of Si, ge, C, or a compound slide of GaAs, gaN, or the like.

Specifically, the plasma includes point particles and active neutral particles, and the second isolation plate 110 may be grounded or connected to a dc bias power supply to prevent the charged particles in the upper chamber from entering the lower chamber 1041 and allow the active neutral particles to enter the lower chamber 1042, that is, the second isolation plate 110 is configured to prevent the charged particles in the upper chamber 1041 from entering the lower chamber 1042 and allow the active neutral particles to enter the lower chamber 1042, that is, the second isolation plate 110 only allows the active neutral particles to pass through, and it should be noted that the number of the second isolation plates 110 and the shape of the second isolation plates 110 are not particularly limited as long as it is ensured that the second isolation plate 110 can prevent the charged particles from passing through and allow the active neutral particles to pass through.

In this embodiment, the etching apparatus further includes a heating device 113 and a temperature sensor 114, the heating device 113 may be located on a side of the dielectric window 102 away from the first isolation plate 103, and is configured to heat the dielectric window 102, the temperature sensor 114 is located around the first isolation plate 103 and is configured to detect a temperature of the first isolation plate 103, and the temperature sensor may be an optical fiber temperature sensor.

Referring to fig. 4, a top view of another etching apparatus provided in this embodiment of the present invention includes a chamber wall 101, a first isolation plate 103, a first through hole 108, a second through hole 109, a heating device 113, and a temperature sensor 114, where the heating device 113 is a circular structure, the 4 second through holes 109 are uniformly distributed, and in a stacking direction of the first isolation plate 103 and the dielectric window 102, a projection of the second through hole 109 is in a projection of the first through hole 108, during an etching process, a temperature in the chamber may rise, a temperature of the first isolation plate 103 may also rise, and the heating device 113 may be used to heat the dielectric window 102, so that a difference between a temperature of the dielectric window 102 and a temperature of the first isolation plate 103 is small, and a large difference between the two temperatures is avoided from causing an explosion.

In this embodiment, the upper chamber 1041 of the etching apparatus may further have a slide glass transmission port for transmitting a slide glass in and out, and may further have an endpoint detection device for detecting a wavelength of the plasma, and further determining whether the etching is finished, the lower chamber 1042 of the etching apparatus may further have an exhaust port, and may be connected to the exhaust port through an extraction device to extract air from the chamber, and the extraction device may be a molecular pump.

The embodiment of the application provides an etching equipment, including the cavity wall, medium window and first division board, cavity wall and medium window form the cavity, in order to treat the sculpture structure in the cavity and carry out the sculpture, the cavity wall has the opening, the opening is used for first division board to follow the opening and slide into the cavity along the first direction, make first division board and cavity wall form the subchamber, thus, when etching for a long time in the subchamber, only the lower surface of first division board is contaminated, the medium window is not contaminated because the protection of the first division board below it, only need to change or wash first division board can, and, when changing first division board, can be through the opening on the cavity wall with first division board roll-off, easy operation is convenient, change time has been reduced, can improve output.

The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments.

The foregoing is merely a preferred embodiment of the present application and, although the present application discloses the foregoing preferred embodiments, the present application is not limited thereto. Those skilled in the art can now make numerous possible variations and modifications to the disclosed embodiments, or modify equivalent embodiments, using the methods and techniques disclosed above, without departing from the scope of the claimed embodiments. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application still fall within the protection scope of the technical solution of the present application without departing from the content of the technical solution of the present application.

Claims (10)

1. The etching equipment is characterized by comprising a cavity wall, a dielectric window and a first isolation plate;

the cavity wall and the dielectric window form a chamber;

the cavity wall has an opening; the opening is used for sliding the first isolation plate into the chamber from the opening along a first direction, so that the first isolation plate and the chamber wall form a sub-chamber.

2. The etching apparatus according to claim 1, further comprising a slide rail;

the sliding rail is installed on the medium window or the first isolation plate, the sliding rail is connected with the first isolation plate in a sliding mode through the sliding rail along a first direction, and the first isolation plate slides into the cavity from the opening along the first direction through the sliding rail.

3. The etching apparatus of claim 1, wherein the first baffle plate has a seal groove with a seal ring therein for sealing the opening when the first baffle plate is slid into the chamber from the opening in a first direction.

4. Etching apparatus according to claim 3, wherein the sealing ring extends in a direction perpendicular to the first direction.

5. The etching equipment according to claim 1, wherein the dielectric window is provided with a first through hole, and a nozzle is arranged in the first through hole and used for introducing gas; the first separator plate has a plurality of second through holes.

6. The etching apparatus according to claim 5, wherein when the first partition plate slides into the chamber from the opening in a first direction, a lower surface of the dielectric window and an upper surface of the first partition plate are attached, and a projection of the first through hole covers a projection of the plurality of second through holes in a stacking direction of the first partition plate and the dielectric window.

7. Etching apparatus according to any of claims 1-6, characterized in that the material of the first separation plate can be ceramic or quartz.

8. The etching apparatus according to any one of claims 1 to 6, wherein the first spacer plate has a thickness less than a thickness of the dielectric window.

9. The etching apparatus according to any one of claims 1 to 6, further comprising a second isolation plate;

the second division board is located in the subchamber, be used for with the subchamber is separated for last cavity and lower cavity, go up the intercommunication between cavity and the lower cavity, the lower cavity has the strutting arrangement who is used for placing the slide glass.

10. The etching apparatus according to any one of claims 1 to 6, further comprising a heating device and a temperature sensor;

the heating device is positioned on one side of the dielectric window, which is far away from the first partition plate, and is used for heating the dielectric window;

the temperature sensors are located on the periphery of the first isolation plate and used for detecting the temperature of the first isolation plate.

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