CN109830435A - A kind of device and method removing silicon chip surface silicon dioxide film - Google Patents
A kind of device and method removing silicon chip surface silicon dioxide film Download PDFInfo
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- CN109830435A CN109830435A CN201910104680.4A CN201910104680A CN109830435A CN 109830435 A CN109830435 A CN 109830435A CN 201910104680 A CN201910104680 A CN 201910104680A CN 109830435 A CN109830435 A CN 109830435A
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- hydrofluoric acid
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- air inlet
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- dioxide film
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Abstract
The present invention provides a kind of device and methods for removing silicon chip surface silicon dioxide film, belong to semiconductor testing apparatus field, including hydrofluoric acid solvent bottle, mixed gas case, atomizer and reaction chamber, hydrofluoric acid solvent bottle passes through the inlet communication of the first pipeline and atomizer, the outlet of atomizer is located inside mixed gas case and the two sealed set, the upper end of hydrofluoric acid solvent bottle is equipped with and its internal air inlet pipe being connected to, the connection of air inlet pipe and external nitrogen supply (NS) device, air inlet pipe is connected to by the second pipeline with mixed gas case, mixed gas case is connected to by third pipeline with reaction chamber, third pipeline is equipped with mixing air cock, reaction chamber is equipped with gas outlet.The present invention can avoid staiing silicon wafer itself when removal silicon dioxide film, while Inductively coupled plasma mass spectrometry can be used to carry out quantitative analysis to metal ion in SiO2 film, carry out effective metal monitoring to back sealing process process.
Description
Technical field
The invention belongs to semiconductor testing apparatus field, it is related to a kind of device for removing silicon chip surface silicon dioxide film and side
Method.
Background technique
It is highly concentrated for full wafer silicon wafer to be immersed in that the technology of silicon chip surface SiO2 film is commonly removed in semicon industry production
It spends in the aqueous solution of hydrogen fluoride gas and is removed, this processing method has following two, first is that with semiconductor row
The development of industry, the metal ion in the SiO2 film of the back side can equally have an impact semiconductor components and devices, cause the risk of electric leakage, but
The prior art is unable to test metal ion content in SiO2 and carries out quantitative analysis, and effective gold can not be carried out to back sealing process process
Belong to monitoring, second is that having stain silicon wafer itself while removing SiO2 film.
Summary of the invention
The problem to be solved in the present invention is to be to provide a kind of device and method for removing silicon chip surface silicon dioxide film, can
It avoids staiing silicon wafer itself when removal silicon dioxide film, while can be used Inductively coupled plasma mass spectrometry to metal in SiO2 film
Ion carries out quantitative analysis, carries out effective metal monitoring to back sealing process process.
In order to solve the above technical problems, the technical solution adopted by the present invention is that: a kind of removal silicon chip surface silicon dioxide film
Device and method, including hydrofluoric acid solvent bottle, mixed gas case, atomizer and reaction chamber, the hydrofluoric acid solvent bottle pass through
The inlet communication of first pipeline and the atomizer, the outlet of the atomizer is located inside the mixed gas case and the two is close
Envelope setting, the upper end of the hydrofluoric acid solvent bottle are equipped with and its internal air inlet pipe being connected to, the air inlet pipe and external nitrogen
The connection of feeding mechanism, the air inlet pipe are connected to by the second pipeline with the mixed gas case, and the mixed gas case passes through
Third pipeline is connected to the reaction chamber, and the third pipeline is equipped with mixing air cock, and the reaction chamber is equipped with gas outlet.
Further, silicon wafer is placed in the reaction chamber by vacuum WAND, and the gas outlet and sour exhaust system connect
Logical setting.
Further, the diameter of the gas outlet is greater than the diameter of the third pipeline, and the air inlet pipe is equipped with air inlet
Switch.
Further, hydrofluoric acid solution is equipped in the hydrofluoric acid solvent bottle, hydrofluoric acid (HF) concentration: 38%, Japan is more
It rubs chemical AA-10 grades of purity.
Further, the nitrogen ratios that the hydrofluoric acid gas after atomizer atomization is supplied with second pipeline are
1:1.5。
Further, the working frequency of the mixing air cock is 20min each, a job of the mixing air cock
Frequency corresponds to a silicon wafer to be processed.
Further, the hydrofluoric acid solvent bottle, mixed gas case, atomizer and reaction chamber are all made of acidproof material system
At.
Further, this device further includes Inductively coupled plasma mass spectrometry.
Using a kind of method of device for removing silicon chip surface silicon dioxide film, step 1: with vacuum WAND by a piece of band
Have silica (SiO2) film silicon wafer be sent into cabinet in, silica (SiO2) film with a thickness of Nanometer；
Nitrogen gas is passed through the hydrogen equipped with high-pure hydrofluoric acid (HF) solution by air inlet pipe step 2: opening air inlet switch
0.5Mpa is pressurized in fluoric acid solvent bottle；
Step 3: high-pure hydrofluoric acid (HF) solution is atomized under the action of nitrogen pressure by atomizer, atomization
The volume ratio of high-pure hydrofluoric acid gas and nitrogen gas is 1:1.5；
Step 4: opening mixing air cock, the high-pure hydrofluoric acid gas of atomization and the mixed gas of nitrogen gas are to dioxy
SiClx (SiO2) carries out corrosion 20min, and corrosion rate is about
Step 5: corrosion terminates, close air inlet switch, close mixing air cock, hydrofluoric acid gas and nitrogen gas it is mixed
It closes steam and sour exhaust system is emitted by sour discharge pipe, emitted again after completing purification；
Step 6: the metal ion in silica (SiO2) stays in silicon wafer table after the corrosion of high-pure hydrofluoric acid steam
Face determines the tenor in silica (SiO2) using Inductively coupled plasma mass spectrometry, to silica (SiO2) film
Interior metal ion carries out quantitative analysis, carries out effective metal monitoring to back sealing process process；
Step 7: repeating the above first step to the 6th step, the processing and detection of multiple silicon wafers are completed.
Compared with prior art, the present invention has the advantage that as follows with good effect.
1, present invention setting hydrofluoric acid solvent bottle and atomizer, enter in reaction chamber after hydrofluoric acid solution is atomized, high
The hydrofluoric acid vapor of concentration can timely corrode the silicon dioxide film on silicon wafer, and the metal ion in silica is in height
Stay in silicon chip surface after the corrosion of pure hydrofluoric acid vapor, metal ion will not be introduced, silicon wafer itself is stain, remaining metal from
Son determines the tenor in silica (SiO2) using Inductively coupled plasma mass spectrometry, to silica (SiO2) film
Interior metal ion carries out quantitative analysis, carries out effective metal monitoring to back sealing process process；
2, gas outlet is connected to setting with sour exhaust system, and hydrofluoric acid gas has very strong corrosivity, discharges system through peracid
It is discharged into atmosphere again after system processing, the feature of environmental protection is strong；
3, hydrofluoric acid solvent bottle, mixed gas case, atomizer and reaction chamber are all made of acidproof material and are made, air inlet pipe,
One pipeline, the second pipeline and third pipeline are also supported using acidproof material, and acidproof material preferably polytetrafluoroethylene material is made,
While removing silica (SiO2) film, metal ion will not be introduced, silicon wafer itself is stain.
4, it is operated in strict accordance with above step, it is simple and convenient, it is high-efficient, it is reliable and stable.
Detailed description of the invention
The attached drawing for constituting a part of the invention is used to provide further understanding of the present invention, schematic reality of the invention
It applies example and its explanation is used to explain the present invention, do not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is a kind of structural schematic diagram for the device and method for removing silicon chip surface silicon dioxide film of the present invention.
Appended drawing reference:
1- air inlet switch；2- hydrofluoric acid solvent bottle；The first pipeline of 21-；3- atomizer；4- mixed gas case；5- silicon wafer；
6- reaction chamber；7- air inlet pipe；The second pipeline of 71-；The gas outlet 8-；9- mixing air cock；10- acid exhaust system；11- inductive coupling
Plasma mass spectrometry.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", "upper", "lower",
The orientation or positional relationship of the instructions such as "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside" is
It is based on the orientation or positional relationship shown in the drawings, is merely for convenience of description of the present invention and simplification of the description, rather than instruction or dark
Show that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as pair
Limitation of the invention.In addition, term " first ", " second " etc. are used for description purposes only, it is not understood to indicate or imply phase
To importance or implicitly indicate the quantity of indicated technical characteristic.The feature for defining " first ", " second " etc. as a result, can
To explicitly or implicitly include one or more of the features.In the description of the present invention, unless otherwise indicated, " multiple "
It is meant that two or more.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood by concrete condition
Concrete meaning in the present invention.
Specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
As shown in Figure 1, the present invention is molten for a kind of device and method for removing silicon chip surface silicon dioxide film, including hydrofluoric acid
Agent bottle 2, mixed gas case 4, atomizer 3 and reaction chamber 6, the import that hydrofluoric acid solvent bottle 2 passes through the first pipeline 21 and atomizer 3
Connection, the outlet of atomizer 3 are located at the inside of mixed gas case 4 and the two sealed set, the upper end of hydrofluoric acid solvent bottle 2 be equipped with
Its internal air inlet pipe 7 being connected to, the connection of air inlet pipe 7 and external nitrogen supply (NS) device, air inlet pipe 7 by the second pipeline 71 with
Mixed gas case 4 is connected to, and mixed gas case 4 is connected to by third pipeline with reaction chamber 6, and third pipeline is equipped with mixing air cock
9, reaction chamber 6 is equipped with gas outlet 8, and the first pipeline 21 is identical with the internal diameter of the second pipeline 71 and air inlet pipe 7, internal diameter 1~
Between 2mm.
Preferably, silicon wafer 5 is placed in reaction chamber 6 by vacuum WAND, using vacuum WAND, will not be caused to silicon wafer 5
Damage will not be infected with impurity, and gas outlet 8 is connected to setting with sour exhaust system 10, and hydrofluoric acid gas has very strong corrosivity,
It is discharged into atmosphere again after the processing of peracid exhaust system 10, the feature of environmental protection is strong.
Preferably, the diameter of gas outlet 8 is greater than the diameter of third pipeline, guarantees the timely discharge of mixed gas, air inlet pipe 7
It is equipped with air inlet switch 1, the opening and closing of nitrogen is timely controlled, realizes the timely control of nitrogen, guarantees the supply of nitrogen and dense
The control of degree, nitrogen reduce the overlooking of hydrofluoric acid vapor as inert gas, play the role of protective gas and carrier, single
Pure hydrofluoric acid vapor has very strong corrosivity, generates corrosion to equipment during subsequent processing, is not easy subsequent processing.
Preferably, hydrofluoric acid solution is equipped in hydrofluoric acid solvent bottle 2, hydrofluoric acid (HF) concentration: 38%, Japan's chemistry that rub more
AA-10 grades of purity are easily evaporated using high concentration, and nebulization efficiency is high, and speed is fast.
Preferably, the nitrogen volume ratio example of hydrofluoric acid gas and the supply of the second pipeline 71 after atomizer 3 is atomized is 1:
1.5, under the premise of guaranteeing corrosive to silicon wafer 5, nitrogen plays the role of protecting equipment, reduces the corrosive nature to equipment,
It is highly preferred that the model st-5523 of atomizer 3.
Preferably, the working frequency for mixing air cock 9 is 20min each, and corrosion rate is aboutGaseous mixture
The corresponding silicon wafer 5 to be processed of one working frequency of switch 9, when guaranteeing to reduce non-productive work under the premise of sufficiently corrosion
Between, promote working efficiency.
Preferably, hydrofluoric acid solvent bottle 2, mixed gas case 4, atomizer 3 and reaction chamber 6 are all made of acidproof material and are made,
Air inlet pipe 7, the first pipeline 21, the second pipeline 71 and third pipeline are also supported using acidproof material, the acidproof preferred polytetrafluoro of material
Ethylene material is made, and while removing silica (SiO2) film, will not introduce metal ion and stain to silicon wafer 5 itself.
Preferably, this device further includes Inductively coupled plasma mass spectrometry 11, it may be determined that the gold in silica (SiO2)
Belong to content, quantitative analysis is carried out to metal ion in silica (SiO2) film, effective metal is carried out to back sealing process process
Monitoring.
It in practical work process, executes according to the following steps, step 1: having silica for a piece of with vacuum WAND
(SiO2) film silicon wafer 5 be sent into cabinet in, silica (SiO2) film with a thickness ofNanometer；
Nitrogen gas is passed through by air inlet pipe 7 equipped with high-pure hydrofluoric acid (HF) solution step 2: opening air inlet switch 1
It is pressurized to 0.5Mpa in hydrofluoric acid solvent bottle 2, the atomization speed of pressure increase, atomizer 3 increases, hydrofluoric acid vapor and nitrogen
Constant rate；
Step 3: high-pure hydrofluoric acid (HF) solution is atomized under the action of nitrogen pressure by atomizer 3, atomization
The volume ratio of high-pure hydrofluoric acid gas and nitrogen gas is 1:1.5；
Step 4: opening mixing air cock 9, the high-pure hydrofluoric acid gas of atomization and the mixed gas of nitrogen gas are to dioxy
SiClx (SiO2) carries out corrosion 20min, and corrosion rate is about
Step 5: corrosion terminates, air inlet switch 1 is closed, closes mixing air cock 9, hydrofluoric acid gas and nitrogen gas
Mixed vapour is emitted into sour exhaust system 10 by sour discharge pipe, emits again after completing purification；
Step 6: the metal ion in silica (SiO2) stays in 5 table of silicon wafer after the corrosion of high-pure hydrofluoric acid steam
Face determines the tenor in silica (SiO2) using Inductively coupled plasma mass spectrometry 11, to silica (SiO2)
Metal ion carries out quantitative analysis in film, carries out effective metal monitoring to back sealing process process；
Step 7: repeating the above first step to the 6th step, the processing and detection of multiple silicon wafers 5 are completed.
The above structure is simple, easily operated, safe and reliable, is manufactured using high-purity acid resisting material, in removal silica
(SiO2) while film, metal ion will not be introduced, silicon wafer 5 itself is stain, to metal ion in silica (SiO2) film
Quantitative analysis is carried out, effective metal monitoring is carried out to back sealing process process.
One embodiment of the present invention has been described in detail above, but the content is only preferable implementation of the invention
Example, should not be considered as limiting the scope of the invention.It is all according to all the changes and improvements made by the present patent application range
Deng should still be within the scope of the patent of the present invention.
Claims (9)
1. a kind of device for removing silicon chip surface silicon dioxide film, it is characterised in that: including hydrofluoric acid solvent bottle, mixed gas
Case, atomizer and reaction chamber, the hydrofluoric acid solvent bottle pass through the inlet communication of the first pipeline and the atomizer, the atomization
The outlet of device is located inside the mixed gas case and the two sealed set, the upper end of the hydrofluoric acid solvent bottle be equipped with in it
The air inlet pipe of portion's connection, the connection of the air inlet pipe and external nitrogen supply (NS) device, the air inlet pipe by the second pipeline with
The mixed gas case connection, the mixed gas case is connected to by third pipeline with the reaction chamber, on the third pipeline
Equipped with mixing air cock, the reaction chamber is equipped with gas outlet.
2. a kind of device for removing silicon chip surface silicon dioxide film according to claim 1, it is characterised in that: silicon wafer passes through
Vacuum WAND is placed in the reaction chamber, and the gas outlet is connected to setting with sour exhaust system.
3. a kind of device for removing silicon chip surface silicon dioxide film according to claim 1, it is characterised in that: the outlet
The diameter of mouth is greater than the diameter of the third pipeline, and the air inlet pipe is equipped with air inlet switch.
4. a kind of device for removing silicon chip surface silicon dioxide film according to claim 1, it is characterised in that: the hydrogen fluorine
Hydrofluoric acid solution is equipped in sour solvent bottle, hydrofluoric acid (HF) concentration: 38%, Japan's chemical AA-10 grades of purity of rubbing more.
5. a kind of device for removing silicon chip surface silicon dioxide film according to claim 1, it is characterised in that: the atomization
The nitrogen ratios of hydrofluoric acid gas and second pipeline supply after device atomization are 1:1.5.
6. a kind of device for removing silicon chip surface silicon dioxide film according to claim 1, it is characterised in that: the mixing
The working frequency of air cock is 20min each, the corresponding silicon wafer to be processed of a working frequency of the mixing air cock.
7. a kind of device for removing silicon chip surface silicon dioxide film according to claim 1, it is characterised in that: the hydrogen fluorine
Sour solvent bottle, mixed gas case, atomizer and reaction chamber are all made of acidproof material and are made.
8. a kind of device for removing silicon chip surface silicon dioxide film according to claim 1, it is characterised in that: this device is also
Including Inductively coupled plasma mass spectrometry.
9. the method for the device using a kind of removal silicon chip surface silicon dioxide film described in claim 1, it is characterised in that:
Step 1: a piece of silicon wafer with silica (SiO2) film is sent into cabinet with vacuum WAND, silica
(SiO2) film with a thickness ofNanometer；
Nitrogen gas is passed through the hydrofluoric acid equipped with high-pure hydrofluoric acid (HF) solution by air inlet pipe step 2: opening air inlet switch
0.5Mpa is pressurized in solvent bottle；
Step 3: high-pure hydrofluoric acid (HF) solution is atomized under the action of nitrogen pressure by atomizer, atomization it is high-purity
The volume ratio of hydrofluoric acid gas and nitrogen gas is 1:1.5；
Step 4: opening mixing air cock, the high-pure hydrofluoric acid gas of atomization and the mixed gas of nitrogen gas are to silica
(SiO2) corrosion 20min is carried out, corrosion rate is about
Step 5: corrosion terminates, air inlet switch is closed, closes mixing air cock, the mixing of hydrofluoric acid gas and nitrogen gas is steamed
Vapour is emitted into sour exhaust system by sour discharge pipe, emits again after completing purification；
Step 6: the metal ion in silica (SiO2) stays in silicon chip surface after the corrosion of high-pure hydrofluoric acid steam, make
The tenor in silica (SiO2) is determined with Inductively coupled plasma mass spectrometry, to metal in silica (SiO2) film
Ion carries out quantitative analysis, carries out effective metal monitoring to back sealing process process；
Step 7: repeating the above first step to the 6th step, the processing and detection of multiple silicon wafers are completed.
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| CN201910104680.4A CN109830435A (en) | 2019-02-01 | 2019-02-01 | A kind of device and method removing silicon chip surface silicon dioxide film |
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| CN201910104680.4A CN109830435A (en) | 2019-02-01 | 2019-02-01 | A kind of device and method removing silicon chip surface silicon dioxide film |
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| CN110181045A (en) * | 2019-07-03 | 2019-08-30 | 宁波恒普真空技术有限公司 | A kind of nitric acid atomising device of continuous degreasing furnace |
| CN111584402A (en) * | 2020-05-19 | 2020-08-25 | 陈国辉 | Manufacturing device of high-power semiconductor device and using method thereof |
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