TW202306705A - Device and method for collecting metal ions on edge of silicon wafer capable of increasing the precision and accuracy in detecting metal ions on the edge of a silicon wafer - Google Patents
Device and method for collecting metal ions on edge of silicon wafer capable of increasing the precision and accuracy in detecting metal ions on the edge of a silicon wafer Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 148
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 148
- 239000010703 silicon Substances 0.000 title claims abstract description 148
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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Abstract
Description
本發明屬於矽片檢測技術領域，尤指一種矽片邊緣金屬離子的採集裝置及方法。The invention belongs to the technical field of silicon chip detection, in particular to a device and method for collecting metal ions on the edge of a silicon chip.
矽片是利用磁場直拉法（Magnetic Field Czochralski Method，MCZ）得到單晶矽棒，單晶矽棒經過線切割、磨削、拋光、清洗等製作程序得到。 在矽片加工過程中會存在各種金屬雜質沾汙，進而導致後序器件的失效，其中，輕金屬（例如Na(鈉)、Mg(鎂)、Al(鋁)、K(鉀)、Ca(鈣)等）會導致器件擊穿使得電壓降低，重金屬（例如Cr(鉻)、Mn(錳)、Fe(鐵)、Ni(鎳)、Cu(銅)、Zn(鋅)等）會導致器件壽命降低。 矽片作為器件的原材料，其表面金屬離子含量會直接影響器件的合格率，因此，需要對矽片表面和邊緣的金屬離子含量進行檢測並控制在一定規格以下，以滿足後序製程要求。Silicon wafers are obtained by using the Magnetic Field Czochralski Method (MCZ) to obtain single crystal silicon rods, and the single crystal silicon rods are obtained through wire cutting, grinding, polishing, cleaning and other production procedures. In the process of silicon wafer processing, there will be various metal impurities contamination, which will lead to the failure of subsequent devices. Among them, light metals (such as Na (sodium), Mg (magnesium), Al (aluminum), K (potassium), Ca (calcium) ), etc.) will lead to device breakdown and reduce the voltage, and heavy metals (such as Cr (chromium), Mn (manganese), Fe (iron), Ni (nickel), Cu (copper), Zn (zinc), etc.) will cause device life reduce. As the raw material of the device, the metal ion content on the surface of the silicon wafer will directly affect the qualified rate of the device. Therefore, it is necessary to detect the metal ion content on the surface and edge of the silicon wafer and control it below a certain specification to meet the requirements of the subsequent process.
但是，在採集矽片邊緣金屬離子過程中，矽片邊緣上、下兩部分的金屬離子均會被回收，因此目前只能通過數學計算的方式獲得矽片邊緣上部分或下部分的金屬離子含量，這種檢測方法造成了矽片邊緣金屬離子含量的檢測精度低，誤差大。However, in the process of collecting metal ions on the edge of the silicon wafer, the metal ions in the upper and lower parts of the edge of the silicon wafer will be recovered, so at present, the metal ion content in the upper or lower part of the edge of the silicon wafer can only be obtained through mathematical calculations , this detection method has caused the detection accuracy of the metal ion content at the edge of the silicon wafer to be low and the error is large.
有鑒於此，本發明期望提供一種矽片邊緣金屬離子的採集裝置及方法； 能夠提高矽晶圓邊緣金屬離子含量的檢測精度及準確度，操作簡單，可靠性高。In view of this, the present invention expects to provide a device and method for collecting metal ions at the edge of a silicon wafer; the detection precision and accuracy of the metal ion content at the edge of the silicon wafer can be improved, and the operation is simple and the reliability is high.
本發明的技術方案是這樣實現的：第一方面，本發明提供了一種矽片邊緣金屬離子的採集裝置，其主要包括：T型隔擋元件，T型隔擋元件的豎向連接部與矽片邊緣相抵接，橫向連接部設置有充滿掃描液的液滴槽以通過將掃描液與矽片邊緣的第一部分相接觸來採集矽片邊緣的第一部分的金屬離子；支撐元件，支撐元件用於支撐矽片。The technical solution of the present invention is achieved in the following way: First, the present invention provides a metal ion collection device at the edge of a silicon wafer, which mainly includes: a T-shaped barrier element, a vertical connection part of the T-shaped barrier element and a silicon The edge of the wafer is abutted against, and the lateral connection part is provided with a drop tank filled with scanning liquid to collect the metal ions of the first part of the edge of the silicon wafer by contacting the scanning liquid with the first part of the edge of the silicon wafer; the supporting element is used for support silicon.
第二方面，本發明提供了一種矽片邊緣金屬離子的採集方法，採集方法能夠應用於第一方面的採集裝置中，其步驟包括：將矽片下移直至矽片的表面與液滴槽開口相接觸；移動T型隔擋元件以使得矽片的邊緣與T型隔擋元件的豎向連接部相抵接，並移動支撐元件以對矽片進行支撐；通過矽片邊緣的第一部分與液滴槽內的掃描液相接觸以採集矽片邊緣的第一部分的金屬離子。In a second aspect, the present invention provides a method for collecting metal ions on the edge of a silicon wafer. The collection method can be applied to the collection device of the first aspect. The steps include: moving the silicon wafer down until the surface of the silicon wafer and the opening of the droplet tank Contact; move the T-shaped barrier element so that the edge of the silicon wafer abuts against the vertical connection part of the T-shaped barrier element, and move the support element to support the silicon wafer; through the first part of the edge of the silicon wafer and the droplet The scanning liquid phase contacts in the tank to collect the metal ions in the first part of the edge of the wafer.
本發明提供了一種矽片邊緣金屬離子的採集裝置及方法； 在採集過程中，將矽片邊緣的第一部分與液滴槽中的掃描液相接觸，同時通過T型隔擋元件的豎向連接部與矽片邊緣相抵接以阻擋液滴槽中的掃描液流動至矽片邊緣的第二部分處，進而完成矽片邊緣的第一部分的金屬離子的採集操作。 通過本發明提供的採集裝置能夠只採集矽片邊緣的第一部分或第二部分的金屬離子，操作簡單且檢測結果誤差小。The invention provides a device and method for collecting metal ions on the edge of a silicon chip; The part abuts against the edge of the silicon wafer to prevent the scanning liquid in the drop tank from flowing to the second portion of the edge of the silicon wafer, thereby completing the collection operation of the metal ions at the first portion of the edge of the silicon wafer. The collection device provided by the invention can only collect the metal ions in the first part or the second part of the edge of the silicon wafer, and the operation is simple and the error of the detection result is small.
下面將結合本發明實施例中的附圖，對本發明實施例中的技術方案進行清楚、完整地描述。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.
在相關技術中為了實現超微量金屬離子含量的測試，矽片金屬離子含量測試需要用到氣相分解（Vapor Phase Decomposition，VPD）和電感耦合等離子體質譜儀（Inductively Coupled Plasma-Mass Spectrometry，ICP-MS）兩種設備，以對採集的VPD液體進行離子定量分析，其一般步驟包括：S1、通過機械手將矽片傳遞至VPD腐蝕槽，同時向VPD腐蝕槽通入氫氟酸（HF）溶液蒸氣2~5分鐘以去除矽片表面的氧化膜，使膜質里的金屬離子遊離在矽片表面；通常來說矽片表面和加熱後的矽片表面都會出現一層很薄的二氧化矽膜，使用氫氟酸蒸氣作為清洗劑，厚度 為10埃左右的二氧化矽膜在5min內足夠被38%的高純氫氟酸溶解掉，同時矽片經過氫氟酸清洗後，矽片表面最外層的Si(矽)幾乎以H鍵(氫鍵)為終端結構，表面呈疏水性，有利於VPD液滴在矽片滾動且不會在矽片表面形成拖尾和殘留，從而確保了VPD液滴收集完整性；S2、在ICP-MS設備的掃描平臺上，通過表面金屬收集系統的噴嘴吸取1ml VPD液滴在矽片表面或矽片邊緣滾動來收集矽片表面的金屬成分；S3、將含有金屬成分的VPD液滴霧化後進行光譜分析測試回收液中金屬含量，將回收液中各金屬含量減去VPD液滴中各金屬含量從而計算得到矽片表面的各種金屬離子的含量。In the related technology, in order to realize the test of ultra-trace metal ion content, the test of metal ion content on silicon wafers needs to use Vapor Phase Decomposition (Vapor Phase Decomposition, VPD) and Inductively Coupled Plasma-Mass Spectrometry (ICP- MS) two kinds of equipment to carry out ion quantitative analysis on the collected VPD liquid, the general steps include: S1, transfer the silicon wafer to the VPD etching tank through the manipulator, and at the same time pass the hydrofluoric acid (HF) solution into the VPD etching tank Steam for 2 to 5 minutes to remove the oxide film on the surface of the silicon wafer, so that the metal ions in the film are free on the surface of the silicon wafer; generally speaking, a thin silicon dioxide film will appear on the surface of the silicon wafer and the surface of the heated silicon wafer. Using hydrofluoric acid vapor as a cleaning agent, the silicon dioxide film with a thickness of about 10 angstroms is enough to be dissolved by 38% high-purity hydrofluoric acid within 5 minutes. (Silicon) almost uses H bond (hydrogen bond) as the terminal structure, and the surface is hydrophobic, which is conducive to the rolling of VPD droplets on the silicon wafer and will not form tails and residues on the surface of the silicon wafer, thus ensuring the complete collection of VPD droplets S2. On the scanning platform of the ICP-MS equipment, draw 1ml of VPD droplet through the nozzle of the surface metal collection system and roll it on the surface of the silicon wafer or the edge of the silicon wafer to collect the metal components on the surface of the silicon wafer; S3. Will contain metal components After the VPD droplets are atomized, perform spectral analysis to test the metal content in the recovery solution, and subtract the metal content in the VPD droplet from the metal content in the recovery solution to calculate the content of various metal ions on the surface of the silicon wafer.
參見圖1，其示出了相關技術中採集器1掃描矽片W表面和邊緣的示意圖。 如圖1所示，該採集器1主要包括：注射泵11、真空管12、外噴嘴13、內噴嘴14、密封塞15、閥門16、真空泵17以及邊緣支撐件18。 其中，機械手將去除表面氧化膜的矽片W背面置於有氣孔的載臺上並將矽片W背面吸附在載臺上表面，機械臂帶動取樣裝置1中的掃描外噴嘴13的底部與矽片W表面保持合適的距離； 注射泵11將掃描液Dro注入內噴嘴14和外噴嘴13之間的空腔，真空泵17抽取內噴嘴14和外噴嘴13之間空腔中的空氣以提供固定的真空，當掃描液Dro的重量與內噴嘴14和外噴嘴13之間空腔中的真空度平衡時，則真空泵17停止抽取空氣。 此時，掃描液Dro的一部分滴落在內外噴嘴之間空腔中，另一部分自動懸浮於內外噴嘴之間空腔外，以便於與矽片W表面接觸來進行掃描； 最後按照設定掃描路線，調節掃描機械臂位置使掃描液Dro滴落在矽片W表面和邊緣等不同位置區域並使得掃描液Dro在矽片W表面和邊緣滾動以收集矽片W表面和邊緣的金屬成分，如圖1中的A所示，掃描液Dro在矽片表面進行掃描，以及如圖1中的B所示，掃描液Dro在矽片邊緣進行掃描。Referring to FIG. 1 , it shows a schematic diagram of a
但是，如圖1所示，當收集矽片邊緣上部分的金屬離子時，掃描液Dro會滾動至矽片邊緣的下部分。 具體來說如圖2所示，當掃描液Dro被滴落在矽片邊緣的上部分位置時，由於矽片邊緣結構特性及掃描液Dro張力的作用，掃描液Dro會流動至矽片邊緣的下部分位置處，使得收集到的掃描液Dro中不僅包含了矽片邊緣上部分的金屬離子，還包含了矽片邊緣下部分的金屬離子，影響了矽片邊緣金屬離子含量的檢測精度及準確度。However, as shown in Figure 1, when the metal ions on the upper part of the silicon wafer edge are collected, the scanning liquid Dro will roll to the lower part of the silicon wafer edge. Specifically, as shown in Figure 2, when the scanning liquid Dro is dropped on the upper part of the edge of the silicon wafer, due to the structural characteristics of the edge of the silicon wafer and the tension of the scanning liquid Dro, the scanning liquid Dro will flow to the edge of the silicon wafer. The position of the lower part makes the collected scanning liquid Dro not only contain the metal ions in the upper part of the edge of the silicon wafer, but also the metal ions in the lower part of the edge of the silicon wafer, which affects the detection accuracy and accuracy of the metal ion content in the edge of the silicon wafer. Spend.
基於上述闡述，本發明實施例期望提供一種矽片邊緣金屬離子的採集裝置，以能夠在整個檢測過程中只收集矽片W邊緣上部分或下部分的金屬離子的技術方案，以提高矽片W邊緣金屬離子檢測精度。 參見圖3，其示出了本發明實施例提供的一種矽片邊緣金屬離子的採集裝置3，其主要包括包括：T型隔擋元件31，T型隔擋元件31的豎向連接部311與矽片W邊緣相抵接，橫向連接部312設置有充滿掃描液Dro的液滴槽3121以通過將掃描液Dro與片矽W邊緣的第一部分32相接觸來採集矽片W邊緣的第一部分32的金屬離子；支撐元件33，支撐元件33用於支撐矽片W。Based on the above description, the embodiment of the present invention expects to provide a collection device for metal ions on the edge of the silicon wafer, so as to be able to collect only the metal ions on the upper or lower part of the edge of the silicon wafer W during the entire detection process, so as to improve the performance of the silicon wafer W. Edge metal ion detection accuracy. Referring to FIG. 3 , it shows a
需要說明的是，在本發明實施例中，矽片W邊緣的第一部分32僅表徵矽片W邊緣的上部分或下部分，並不限定為矽片W正面對應的邊緣部分或矽片W背面對應的邊緣部分。It should be noted that, in the embodiment of the present invention, the
對於圖3所示的採集裝置3，在採集過程中，將矽片W邊緣的第一部分32與液滴槽3121中的掃描液Dro相接觸並依靠掃描液Dro的張力作用使得掃描液Dro流動並充滿矽片W邊緣的第一部分32的表面，同時通過T型隔擋元件31的豎向連接部311與矽片W邊緣相抵接以阻擋液滴槽3121中的掃描液Dro流動至矽片W邊緣的第二部分34處， 進而完成矽晶圓邊緣的第一部分32的金屬離子的採集操作。 通過本發明實施例提供的採集裝置3能夠只採集矽片W邊緣的第一部分32或第二部分34的金屬離子，操作簡單且檢測結果誤差小。For the
對於圖3所示的採集裝置3，在一些可能的實施方式中，T型隔擋元件31中與矽片W相接觸的部分包覆有柔性材料。 可以理解地，對於T型隔擋元件31與矽片W相接觸的部分均包裹有柔性材料，能夠防止在與矽片W接觸的過程中不會對矽片W的表面及邊緣產生損傷。For the
對於上述實施方式，在一些示例中，柔性材料還被設置成能夠防止矽片W邊緣的第一部分32的掃描液Dro上溢至矽片W邊緣的第二部分34。 可以理解地，在本發明實施例，不僅通過T型隔擋元件阻擋掃描液Dro上溢，同時通過柔性材料產生密封作用以隔絕掃描液Dro上溢，從而使得最終採集的掃描液Dro中僅包含矽片W邊緣的第一部分32的金屬離子，進而提升了矽片W邊緣金屬離子的檢測精度。For the above embodiments, in some examples, the flexible material is further configured to prevent the scanning liquid Dro in the
對於圖3所示的採集裝置3，在一些可能的實施方式中，支撐元件33中與矽片W相接觸的部分包覆有柔性材料。For the
具體而言，在本發明實施例中柔性材料可以為可溶性聚四氟乙烯、聚四氟乙烯等。Specifically, in the embodiment of the present invention, the flexible material may be soluble polytetrafluoroethylene, polytetrafluoroethylene, or the like.
對於圖3所示的採集裝置3，在一些可能的實施方式中，掃描液Dro的成分為：品質分數為0.264%~3%的氫氟酸（HF），品質分數為4%~11.42%的雙氧水（H
2O
2），剩餘為水（H
2O）； 其中，雙氧水（H
2O
2）的品質濃度為35±1%，日本多摩化學AA-10級純度； 氫氟酸（HF）的品質濃度為38%，日本多摩化學AA-10級純度； 超純水：電阻率≥18MΩ·cm，水質：電阻率＞18.2MΩ·cm，TOC＜5ppb。
For the
對於圖3所示的採集裝置3，在一些可能的實施方式中，如圖4所示，採集裝置3中還包括高壓氣體噴嘴41，高壓氣體噴嘴41被設置成朝向矽片W邊緣與T型隔擋元件31相抵接的位置噴射高壓氣體，以使得矽片W邊緣的第一部分32的掃描液Dro不會上溢至矽片W邊緣的第二部分34。 為了進一步地壁面掃描液Dro上溢至矽片W邊緣的第二部分34處及上表面，在具體實施過程中，在T型隔擋元件31與矽片W相抵接的上方設置有朝向矽片W與T型隔擋元件31接觸位置方向的高壓氣體噴嘴41。For the
對於上述的實施方式，在一些示例中，高壓氣體噴嘴41還被設置成噴射的高壓氣體能夠沿矽片W邊緣的第二部分34噴射至矽片W與T型隔擋元件31相接觸的位置。For the above-mentioned embodiments, in some examples, the high-
對於上述的實施方式，在一些示例中，高壓氣體噴嘴41噴射的高壓氣體為氮氣。 可以理解地，高壓氣體噴嘴41向矽片W與T型隔擋元件31向接觸的位置噴射惰性氣體，不僅能夠進一步避免掃描液Dro上溢，惰性氣體氮氣不會影響掃描液Dro中金屬離子成分的變化，也就是說不會對檢測結果產生影響。For the above-mentioned embodiments, in some examples, the high-pressure gas injected by the high-
參見圖5，其示出了本發明實施例提供的一種矽片邊緣金屬離子的採集方法，採集方法能夠應用於前述技術方案的採集裝置3中，其步驟包括：S501、將矽片下移直至矽片的表面與液滴槽開口相接觸；S502、移動T型隔擋元件以使得矽片的邊緣與T型隔擋元件的豎向連接部相抵接，並移動支撐元件以對矽片進行支撐；S503、通過矽片邊緣的第一部分與液滴槽內的掃描液相接觸以採集矽片邊緣的第一部分的金屬離子。Referring to FIG. 5 , it shows a method for collecting metal ions on the edge of a silicon wafer provided by an embodiment of the present invention. The collection method can be applied to the
可以理解地，在矽片W邊緣的金屬離子採集完成後，將掃描后的掃描液霧化後進行光譜分析測試回收的掃描液中金屬離子含量以及測試掃描前掃描液中金屬離子含量； 並將回收的掃描液中各金屬離子含量減去掃描前的掃描液中各金屬離子含量，從而可以計算得到矽片W邊緣的各種金屬離子的含量。Understandably, after the collection of metal ions on the edge of the silicon wafer W is completed, atomize the scanned scanning liquid and perform spectral analysis to test the metal ion content in the recovered scanning liquid and test the metal ion content in the scanning liquid before scanning; and The content of each metal ion in the recovered scanning liquid is subtracted from the content of each metal ion in the scanning liquid before scanning, so that the content of various metal ions at the edge of the silicon wafer W can be calculated.
需要說明的是：本發明實施例所記載的技術方案之間，在不衝突的情況下，可以任意組合。It should be noted that: the technical solutions described in the embodiments of the present invention can be combined arbitrarily if there is no conflict.
以上所述，僅為本發明的具體實施方式，但本發明的保護範圍並不局限於此，任何熟悉本技術領域具通常知識者在本發明揭露的技術範圍內，可輕易想到變化或替換，都應涵蓋在本發明的保護範圍之內。 因此，本發明的保護範圍應以所述申請專利範圍的保護範圍為準。The above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Anyone familiar with the technical field with ordinary knowledge can easily think of changes or substitutions within the technical scope disclosed in the present invention. All should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the patent application.
1:採集器 11:注射泵 12:真空管 13:外噴嘴 14:內噴嘴 15:密封塞 16:閥門 17:真空泵 18:邊緣支撐件 3:矽片邊緣金屬離子的採集裝置 31:T型隔擋元件 311:豎向連接部 312:橫向連接部 3121:液滴槽 32:第一部分 33:支撐元件 34::第二部分 41:高壓氣體噴嘴 A:掃描液在矽片表面進行掃描 B:掃描液在矽片邊緣進行掃描 Dro:掃描液 W:矽片 S501~S503:步驟流程 1: Collector 11:Syringe pump 12: vacuum tube 13: Outer nozzle 14: Inner nozzle 15: sealing plug 16: Valve 17: Vacuum pump 18: Edge support 3: Collection device for metal ions on the edge of silicon wafer 31: T-shaped barrier element 311: vertical connection part 312: Transverse connection part 3121: drop tank 32: Part One 33: Support element 34::Part Two 41: High pressure gas nozzle A: The scanning fluid is scanned on the surface of the silicon wafer B: The scanning fluid scans on the edge of the silicon wafer Dro: scanning fluid W: Wafer S501~S503: Step process
圖1為本發明實施例提供的常規技術方案中採集器掃描矽片表面和邊緣的結構示意圖； 圖2為本發明實施例提供的常規技術方案中採集矽片邊緣金屬離子的示意圖； 圖3為本發明實施例提供的一種矽片邊緣金屬離子的採集裝置結構示意圖； 圖4為本發明實施例提供的另一種矽片邊緣金屬離子的採集裝置結構示意圖； 圖5為本發明實施例提供的一種矽片邊緣金屬離子的採集方法流程示意圖。 Fig. 1 is a schematic structural diagram of a collector scanning the surface and edge of a silicon wafer in a conventional technical solution provided by an embodiment of the present invention; 2 is a schematic diagram of collecting metal ions at the edge of a silicon wafer in a conventional technical solution provided by an embodiment of the present invention; 3 is a schematic structural diagram of a collection device for metal ions on the edge of a silicon wafer provided by an embodiment of the present invention; FIG. 4 is a schematic structural diagram of another collection device for metal ions on the edge of a silicon wafer provided by an embodiment of the present invention; FIG. 5 is a schematic flowchart of a method for collecting metal ions at the edge of a silicon wafer according to an embodiment of the present invention.
3:矽片邊緣金屬離子的採集裝置 3: Collection device for metal ions on the edge of silicon wafer
31:T型隔擋元件 31: T-shaped barrier element
311:豎向連接部 311: vertical connection part
312:橫向連接部 312: Transverse connection part
3121:液滴槽 3121: drop tank
32:第一部分 32: Part One
33:支撐元件 33: Support element
34:第二部分 34: Part Two
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