JPH02236295A - Electroplating method - Google Patents
Electroplating methodInfo
- Publication number
- JPH02236295A JPH02236295A JP5534189A JP5534189A JPH02236295A JP H02236295 A JPH02236295 A JP H02236295A JP 5534189 A JP5534189 A JP 5534189A JP 5534189 A JP5534189 A JP 5534189A JP H02236295 A JPH02236295 A JP H02236295A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- plated
- cell
- liquid
- anode plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009713 electroplating Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims description 15
- 238000007747 plating Methods 0.000 claims abstract description 62
- 239000007788 liquid Substances 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 6
- 229910052738 indium Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 230000002950 deficient Effects 0.000 abstract description 2
- 239000010953 base metal Substances 0.000 description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011149 active material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/04—Removal of gases or vapours ; Gas or pressure control
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は平板状の被メッキ部材にメッキ膜を形成する電
気メッキ方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electroplating method for forming a plating film on a plate-shaped member to be plated.
従来より光電変換用半導体チップと、信号処理用シリコ
ンIC半導体チップとにインジウム等の軟質金属からな
るバンプN.極を形成し,これを向き合わせて熱圧着し
たハイブリッド型赤外線イメージセンサーが知られてい
る。バンプ電極は典型的にはインジウム等の軟質金属か
らなり、直径25ミクロン,高さ10ミクロン、ピッチ
50ミクロンで例えば64 X 64個配列されたもの
である。またその形成方法は,開口を設けたレジスト膜
をメッキ下地金属膜上に形成し、続いてメッキ下地金属
膜を陰極として開口部にのみバンプ電極をメッキ成長さ
せた後,不用のレジスト膜とメッキ下地金属膜を除去す
るものである。Bumps made of soft metal such as indium have conventionally been used in semiconductor chips for photoelectric conversion and silicon IC semiconductor chips for signal processing. A hybrid infrared image sensor is known in which poles are formed and the poles are placed facing each other and bonded under heat. The bump electrodes are typically made of a soft metal such as indium, and are arranged in, for example, 64 x 64 with a diameter of 25 microns, a height of 10 microns, and a pitch of 50 microns. In addition, the formation method is to form a resist film with an opening on the plating base metal film, then plating and growing a bump electrode only in the opening using the plating base metal film as a cathode, and then plating the unnecessary resist film and plating. This is to remove the underlying metal film.
しかし、こうした従来のバンプ電極用のメッキ膜形成で
は、第3図に示すように基板1のメッキ下地金属2上に
形成されたレジスト膜3が疎水性のため,その開口部は
メッキ液5に充分に濶れレこくく、開口部に気泡7が残
り、メッキ不良が生じ易い。当然ながらメッキ不良の箇
所は画素欠陥となり、イメージセンサーの性能を損うも
のとなる。However, in such conventional plating film formation for bump electrodes, the resist film 3 formed on the plating base metal 2 of the substrate 1 is hydrophobic, as shown in FIG. If it does not dry out sufficiently, air bubbles 7 remain in the opening, which tends to cause plating defects. Naturally, areas with poor plating will result in pixel defects, which will impair the performance of the image sensor.
特に形成しようとするバンプの高さが大きい;よどレジ
スト膜厚が大きくなり.また素子を微細化するほど開口
径が小さくなるため、濡れ性の悪さによるメッキ不良が
顕著である。In particular, the height of the bump to be formed is large; the resist film thickness becomes large. Furthermore, as the element becomes finer, the opening diameter becomes smaller, so plating defects due to poor wettability become more noticeable.
さらに、表面活性材の添加は濡れ性をある程度改善する
がメッキ膜中ヘの不純物混入を招き、メッキされたバン
プの硬さを増してしまう等の理由で熱圧着性を損うため
、この場合には適用できなb1。Furthermore, although the addition of a surface-active material improves wettability to some extent, it leads to the introduction of impurities into the plating film, which increases the hardness of the plated bumps and impairs thermocompression bondability. b1 cannot be applied to
こうしてパンプメツキ形成不良の発生はセンサーの大画
素化、微細化の障害となっていた。In this way, the occurrence of poor pump plating formation has been an obstacle to increasing the size and miniaturization of pixels in sensors.
本発明の目的は上記の欠点を解決し、濡れ性を改善して
欠陥バンプ発生をなくした電気メッキ方法を提供するこ
とにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an electroplating method that solves the above-mentioned drawbacks, improves wettability, and eliminates the occurrence of defective bumps.
上記目的を達成するため、本発明による電気メッキ方法
においては、内部に被メッキ部材と陽極板とを対向して
配置したメッキ槽を真空に徘気し、続いて槽内に供給し
たメッキ液中に前記被メッキ部材を浸した後、電気メッ
キを開始するものである。また、電気メッキ中において
も真空排気を続けることもできる。In order to achieve the above object, in the electroplating method according to the present invention, a plating tank in which a member to be plated and an anode plate are disposed facing each other is evacuated, and then a plating solution supplied into the tank is evacuated. After immersing the member to be plated in the solution, electroplating is started. Furthermore, evacuation can be continued even during electroplating.
被メッキ部材は開口を設けたレジスト膜が形成されたも
のであるが、本発明の電気メッキ方法ではこれにメッキ
液が供給される際は真空中であるため、レジスト開口部
には空気等の気体は残っておらず気泡が残ることがない
。従ってメッキ液は開口部のメッキ下地金属に充分接触
し、表面活性材等を何等必要とせず濡れ性を改善できる
ので、欠陥のない良好なバンプを形成できる。The member to be plated has a resist film formed with openings, but in the electroplating method of the present invention, when the plating solution is supplied to the member in a vacuum, the resist openings are free of air, etc. No gas remains and no bubbles remain. Therefore, the plating solution comes into sufficient contact with the plating base metal in the opening, and wettability can be improved without the need for any surface active material, so that good bumps with no defects can be formed.
次に、本発明をInパンプメッキに適用した実施例につ
いて図面を参照して説明する。Next, an embodiment in which the present invention is applied to In pump plating will be described with reference to the drawings.
第1図(a)〜(c)は本発明の電気メッキ方法を適用
したInバンプ形成の過程を示した図であり、第2図は
これを実施するために使用するメッキ装置の例を示す部
分断面図である。ここでメッキ膜を形成しようとする被
メッキ部材は第1図(a)に示すように、平板状の基板
1上にメッキ下地金属2が形成され、さらにそのうえに
開口部4を設けたレジスト膜3がマスクとして形成され
たものである。Figures 1 (a) to (c) are diagrams showing the process of forming In bumps using the electroplating method of the present invention, and Figure 2 shows an example of the plating equipment used to carry out this process. FIG. As shown in FIG. 1(a), the plated member on which a plating film is to be formed is a plated base metal 2 formed on a flat substrate 1, and a resist film 3 on which an opening 4 is formed. is formed as a mask.
第2図において、まず、メッキ槽11とメッキ液タンク
16間をつなぐ配管に設けた弁17a, 17b, 1
7c,17dを閉じ、メッキ液タンク16にメッキ液を
入れておき、メッキ槽11の内部に陰極とする被メッキ
部材12と、インジウムからなる陽極板13とを対向し
て配置する。次に真空ボンプ15又は大気に通ずる配管
の弁17eを切り替えて真空ボンプ15によりメッキ槽
lI内を真空排気する。メツキ槽11は真空を保てる密
閉容器である。続いて弁17a, 17cを開き、液送
ポンプ14によりメッキ液タンク16からメノキ液5を
導入し、被メッキ部材12と陽極板13をメッキ液5中
に浸す。ここで第1図(b)に示すように,メッキ液5
は被メッキ部材のレジスト膜3の開口部4に入り込んで
メッキ下地金属に充分に接触する。この後メッキ電源1
8から電流を印加することで、第1図(c)に示すよう
にInメッキバンプ6が形成される。In FIG. 2, first, valves 17a, 17b, 1 are installed in the piping connecting the plating tank 11 and the plating solution tank 16.
7c and 17d are closed, a plating solution is placed in a plating solution tank 16, and a member to be plated 12, which serves as a cathode, and an anode plate 13 made of indium are placed inside the plating tank 11, facing each other. Next, the vacuum pump 15 or the valve 17e of the pipe communicating with the atmosphere is switched to evacuate the inside of the plating tank II by the vacuum pump 15. The plating tank 11 is a closed container that can maintain a vacuum. Subsequently, the valves 17a and 17c are opened, the agate solution 5 is introduced from the plating solution tank 16 by the solution pump 14, and the member to be plated 12 and the anode plate 13 are immersed in the plating solution 5. Here, as shown in Figure 1(b), the plating solution 5
enters the opening 4 of the resist film 3 of the member to be plated and sufficiently contacts the plating base metal. After this, plating power supply 1
By applying current from 8, In plated bumps 6 are formed as shown in FIG. 1(c).
ここでメッキ槽l1にメッキ液5を満たした後、通常は
弁17eを切り替えて大気を導入しておけば良いのであ
るが,メッキ中も真空に引き続けることにより、液槽ポ
ンプの制御は複雑になるがメッキ中に発生する気泡をも
効果的に除去できる。After filling the plating tank l1 with the plating solution 5, normally it would be sufficient to switch the valve 17e to introduce atmospheric air, but since the vacuum is continued during plating, the control of the tank pump becomes complicated. However, it can also effectively remove air bubbles generated during plating.
メッキ終了後は弁17a, 17cを閉じ、弁17b,
17dを開いて液送ボンプ14によりメッキ液をメッ
キ液タンクl6へ戻すことで、次の被メッキ部材に交換
をすれば良い。本発明の方法では第3図に示したように
気泡は残らずパンブメッキ不良は生じない。After plating is completed, valves 17a and 17c are closed, and valves 17b and 17c are closed.
By opening 17d and returning the plating liquid to the plating liquid tank l6 using the liquid feed pump 14, the next member to be plated can be replaced. In the method of the present invention, as shown in FIG. 3, no bubbles remain and no punb plating defects occur.
尚、以上の実施例はあくまでも一例であり、インジウム
以外のバンプメソキにも同様に適用できることはいうま
でもない。It should be noted that the above embodiment is merely an example, and it goes without saying that it can be similarly applied to bump materials other than indium.
以上説明したように本発明によれば、パンプメッキを形
成する開口部に気泡が残ることがなく、従ってメッキ不
良欠陥のないバンプを形成することができる。As explained above, according to the present invention, no air bubbles remain in the opening where the bump plating is formed, and therefore, a bump without plating defects can be formed.
第1図(a)〜(c)は本発明の電気メッキ方法を適用
したInバンプ形成の過程を説明するための被メッキ部
材の拡大図、第2図はこれを実施するために使用するメ
ッキ装置の例を示す部分断面図、第3図は従来の方法に
よるInバンプ形状を示す図である。
1・・・基板 2・・・メッキ下地金属3・
・・レジスト膜 4・・・開口部5・・・メッキ
液 6・・・Inメッキバンプ7・・・気泡
11・・・メッキ槽12・・被メッキ部材
13・・・陽極板14・・・液送ボンプ 15
・・・真空ポンプ16−・・メッキ液タンク 17a
,17b,17c,17d,17e−弁18・・・メッ
キ電源
特許出願人 日本電気株式会社Figures 1 (a) to (c) are enlarged views of a member to be plated to explain the process of forming In bumps using the electroplating method of the present invention, and Figure 2 is an enlarged view of a plated member used to carry out the process. FIG. 3 is a partial cross-sectional view showing an example of the device, and is a diagram showing the shape of an In bump formed by a conventional method. 1... Substrate 2... Plating base metal 3.
...Resist film 4...Opening 5...Plating solution 6...In plating bump 7...Bubble
11... Plating tank 12... Member to be plated 13... Anode plate 14... Liquid feed pump 15
...Vacuum pump 16-...Plating liquid tank 17a
, 17b, 17c, 17d, 17e-Valve 18...Plating power supply patent applicant NEC Corporation
Claims (2)
たメッキ槽を真空に排気し、続いて槽内に供給したメッ
キ液中に前記被メッキ部材を浸した後、電気メッキを開
始することを特徴とする電気メッキ方法。(1) After evacuating the plating tank in which the member to be plated and the anode plate are placed facing each other, and then immersing the member to be plated in the plating solution supplied into the tank, electroplating is started. An electroplating method characterized by:
特徴とする請求項第1項に記載の電気メッキ方法。(2) The electroplating method according to claim 1, characterized in that vacuum evacuation is continued even during electroplating.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1055341A JPH0772357B2 (en) | 1989-03-07 | 1989-03-07 | Electroplating method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1055341A JPH0772357B2 (en) | 1989-03-07 | 1989-03-07 | Electroplating method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02236295A true JPH02236295A (en) | 1990-09-19 |
JPH0772357B2 JPH0772357B2 (en) | 1995-08-02 |
Family
ID=12995809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1055341A Expired - Fee Related JPH0772357B2 (en) | 1989-03-07 | 1989-03-07 | Electroplating method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0772357B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0978300A (en) * | 1995-09-14 | 1997-03-25 | Kondo:Kk | Treating device for plating or washing |
JP2014139341A (en) * | 2012-12-11 | 2014-07-31 | Novellus Systems Incorporated | Electric loading vacuum plating cell |
US10128102B2 (en) | 2013-02-20 | 2018-11-13 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
US10840101B2 (en) | 2009-06-17 | 2020-11-17 | Novellus Systems, Inc. | Wetting pretreatment for enhanced damascene metal filling |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9677188B2 (en) | 2009-06-17 | 2017-06-13 | Novellus Systems, Inc. | Electrofill vacuum plating cell |
US9455139B2 (en) | 2009-06-17 | 2016-09-27 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
US9617648B2 (en) | 2015-03-04 | 2017-04-11 | Lam Research Corporation | Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51120937A (en) * | 1975-03-27 | 1976-10-22 | Becker Otto Alfred | Apparatus for electroplating metal surface * especially cut edge formed by piling cut metal plate |
JPS51149131A (en) * | 1975-05-07 | 1976-12-21 | Rarusu Edobin Anderuson | Chemical or electrochemical treatment method and apparatus therefor |
JPH01294888A (en) * | 1988-05-19 | 1989-11-28 | Mitsubishi Electric Corp | Electrolytic plating equipment |
-
1989
- 1989-03-07 JP JP1055341A patent/JPH0772357B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51120937A (en) * | 1975-03-27 | 1976-10-22 | Becker Otto Alfred | Apparatus for electroplating metal surface * especially cut edge formed by piling cut metal plate |
JPS51149131A (en) * | 1975-05-07 | 1976-12-21 | Rarusu Edobin Anderuson | Chemical or electrochemical treatment method and apparatus therefor |
JPH01294888A (en) * | 1988-05-19 | 1989-11-28 | Mitsubishi Electric Corp | Electrolytic plating equipment |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0978300A (en) * | 1995-09-14 | 1997-03-25 | Kondo:Kk | Treating device for plating or washing |
JP2789317B2 (en) * | 1995-09-14 | 1998-08-20 | 株式会社コンドウ | Processing equipment for plating or cleaning |
US10840101B2 (en) | 2009-06-17 | 2020-11-17 | Novellus Systems, Inc. | Wetting pretreatment for enhanced damascene metal filling |
JP2014139341A (en) * | 2012-12-11 | 2014-07-31 | Novellus Systems Incorporated | Electric loading vacuum plating cell |
US10128102B2 (en) | 2013-02-20 | 2018-11-13 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
Also Published As
Publication number | Publication date |
---|---|
JPH0772357B2 (en) | 1995-08-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |