JPH02129393A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPH02129393A JPH02129393A JP27942388A JP27942388A JPH02129393A JP H02129393 A JPH02129393 A JP H02129393A JP 27942388 A JP27942388 A JP 27942388A JP 27942388 A JP27942388 A JP 27942388A JP H02129393 A JPH02129393 A JP H02129393A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- plating
- plating solution
- plating liquid
- fine particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title description 8
- 238000007747 plating Methods 0.000 claims abstract description 103
- 239000010419 fine particle Substances 0.000 claims abstract description 11
- 239000007788 liquid Substances 0.000 abstract description 16
- 238000005868 electrolysis reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
- 239000010931 gold Substances 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 11
- 238000007872 degassing Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 210000000078 claw Anatomy 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 206010073150 Multiple endocrine neoplasia Type 1 Diseases 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- UPIXZLGONUBZLK-UHFFFAOYSA-N platinum Chemical compound [Pt].[Pt] UPIXZLGONUBZLK-UHFFFAOYSA-N 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 125000003607 serino group Chemical group [H]N([H])[C@]([H])(C(=O)[*])C(O[H])([H])[H] 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の概要］
半導体装置の製造方法、特に集積回路（ＩＣ）製造工程
のウェハ・プロセスにおけるメッキ・プロセスの改良に
関し、
ウェハ表面のメッキ部分に気泡や微粒子を付着させたま
まメッキすることなく、良好なメッキを行うことができ
る半導体装置の製造方法を提供することを目的とし、
上向きに配置したウェハの上部からメッキ液を供給し、
このメッキ液に含まれる気泡や微粒子をウェハの上方の
脱泡孔から除去してメッキすることを特徴とする半導体
装置の製造方法を含み）ｊＩ成する。[Detailed Description of the Invention] [Summary of the Invention] Regarding the improvement of the plating process in the wafer process of the semiconductor device manufacturing method, especially the integrated circuit (IC) manufacturing process, the present invention relates to the improvement of the plating process in the wafer process of the integrated circuit (IC) manufacturing process. The purpose of this method is to provide a method for manufacturing semiconductor devices that can perform good plating without directly plating the wafer.
The present invention includes a method for manufacturing a semiconductor device characterized in that air bubbles and fine particles contained in the plating solution are removed from a degassing hole above the wafer before plating is performed.
本発明は、半導体装置の製造方法、特に集積回路（ＩＣ
）製造工程のウェハ・プロセスにおけるメッキ・プロセ
スの改良に関する。The present invention relates to a method of manufacturing a semiconductor device, particularly an integrated circuit (IC).
) Concerning improvement of the plating process in the wafer process of the manufacturing process.
近年のＩＣの高密度化に伴い、■チップ内の実装電極の
高密度化が要求されている。このため、半導体チップに
形成する接続電極である金バンプのサイズの小さいもの
を歩留りよく形成する必要がある。With the recent increase in the density of ICs, there is a demand for higher density mounting electrodes within the chip. For this reason, it is necessary to form small-sized gold bumps, which are connection electrodes formed on semiconductor chips, with a high yield.
［従来の技術］
近年、ＬＳＩの電極数は増加する傾向にあり、従来の金
バンプ形成技術においては、金メッキにてバンブを形成
しているが、この際メツ＝ｌ−／＆は下から供給し、ウ
ェハを伏せてその上に誼いてメッキを行っていた。[Conventional technology] In recent years, the number of electrodes in LSI has been increasing, and in the conventional gold bump forming technology, the bumps are formed by gold plating, but in this case, the metal =l-/& is supplied from below. Then, the wafer was placed face down and plating was performed on top of it.
かかる金バンプの形成する方法を第３図を参照して節単
に説明すると、同図（ａ）に示されるようにシリコン基
板３１に導体３２が設けられていてそれに接続するバン
プを形成するには、同図りｂ）に示されるように、シリ
コン基板３１工にレジスト３３を塗布し、それを図示の
如くパターニングし、次いで金メッキして金バンプ３５
を形成し、最後に同図（ｃ）に示される如くレジストを
除去し、導体３２と接続した金バンブ３５を残す。The method for forming such gold bumps will be briefly explained with reference to FIG. 3. As shown in FIG. 3, a conductor 32 is provided on a silicon substrate 31 and a bump connected thereto is formed. As shown in Figure b), a resist 33 is applied to a silicon substrate 31, patterned as shown, and then gold plated to form gold bumps 35.
Finally, as shown in FIG. 3C, the resist is removed, leaving a gold bump 35 connected to the conductor 32.
前記の金メッキをなすには第４図（ａ）に示される装置
を用いる。図中、４１はメイン・タンク、４２はサブ・
タンク、４３はメッキ部で、斜線を付して示すメッキ液
４４は、サブ・タンク４２からマグネット・ポンプ４５
を介してメッキ部４３へ供給され、他方サブ・タンク４
２を含む部分でメッキ液４４は、膜ポンプ４６ａ、活性
炭フィルター４７および膜ポンプ４６ｂ、濾過フィルタ
ー４８を介して循環せしめられ清浄化され、熱電対４９
によってその温度が検知される。The apparatus shown in FIG. 4(a) is used to perform the gold plating. In the figure, 41 is the main tank, 42 is the sub tank.
A tank 43 is a plating part, and a plating liquid 44 shown with diagonal lines is supplied from a sub-tank 42 to a magnet pump 45.
is supplied to the plating section 43 via the sub-tank 4.
2, the plating solution 44 is circulated and cleaned through a membrane pump 46a, an activated carbon filter 47, a membrane pump 46b, and a filtration filter 48.
The temperature is detected by
メッキ部４３は同図（ｂ）に詳細に示され、メッキ液４
４はウェハ（カソード）５０に下方から供給される構成
となっている。図中、５１はアノードで、ウェハ５０は
カソードとなっている爪５２で支持され、メッキ液４４
は爪の間の空隙を流れて同図（ａ）と（ｂ）に示される
如くメッキ部４３から溢れ出るようになっている。The plating part 43 is shown in detail in FIG.
4 is configured to be supplied to the wafer (cathode) 50 from below. In the figure, 51 is an anode, the wafer 50 is supported by a claw 52 serving as a cathode, and the plating solution 44 is
Flows through the gap between the claws and overflows from the plated portion 43 as shown in FIGS. 4(a) and 4(b).
ところが、メン＝１層夜中に気泡や微粒子が含まれてい
ると、下から供給されるメッキ液を上方で抑える形でウ
ェハが載っているために、気泡や微粒子がウェハ表面の
レジストパターンなどにひっかかりやすくオーバーフロ
ーさせていても除去しきれなかった。これを第５図を参
照して説明すると、第３図（ｂ）に示した如きレジスト
パターンは、メッキ部４３では第５図（ａ）に示される
ように配置され、気泡５３や微粒子５４は第５図（ａ）
に構成的に誇張して示すように逃げるところがないので
窓３４のすみの部分に留まったままになる。この状態で
メツ・１・か進行すると、第５図（ｂ）に示すれるよう
に、気泡５３や微粒子５４をメ・７キ部分に捕獲した状
態のままメッキが行われてしまうため、気泡５３のある
部分はメンキされなかったり、微粒子５４を取り込んだ
ままメッキされたりして、欠陥のある金バンプが作られ
る問題を生じていた。However, if air bubbles or particulates are present in the first layer, the air bubbles or particulates may interfere with the resist pattern on the wafer surface because the wafer is placed in such a way that the plating solution supplied from below is suppressed from above. It easily got caught and could not be completely removed even if it overflowed. To explain this with reference to FIG. 5, the resist pattern shown in FIG. 3(b) is arranged in the plating part 43 as shown in FIG. Figure 5(a)
As shown in the exaggerated composition, there is no place to escape, so it remains in the corner of the window 34. If the metal layer 1 progresses in this state, as shown in FIG. 5(b), plating will be performed with the air bubbles 53 and fine particles 54 captured in the metal layer 7, so the air bubbles 53 Some parts were not peeled or were plated with particulates 54 incorporated therein, resulting in a defective gold bump.
そこで、本発明は、ウェハ表面のメッキ部分に気泡や微
粒子を付着させたままメッキすることなく、良好なメッ
キを行うことができる半導体装置の製造方ｔａ＝を提供
することを目的とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method for manufacturing a semiconductor device that can perform good plating without plating with air bubbles or fine particles attached to the plated portion of the wafer surface.
上記課題は、上向きに配置したウェハの上部からメッキ
液を供給し、このメッキ液に含まれる気泡や微粒子をウ
ェハの上方の脱泡孔から除去してメッキすることを特徴
とする半導体装置の製造方法によって解決される。The above problem is to manufacture a semiconductor device, which is characterized in that a plating solution is supplied from the upper part of a wafer placed upward, and air bubbles and particles contained in the plating solution are removed from a degassing hole above the wafer for plating. Solved by method.
第１図は本発明の原理説明図である。同図において、Ｉ
Ｎまウェハ、１２はメッキン夜、１３はメッキン夜１２
に含まれる気泡、１４はメッ二Ｆ液１２に含まれる微粒
子であり、ウェハ１１は上向きに配置されており、その
背面は真空で引かれている真空テーブル１５に密若しで
いる。また、ウェハ１１の上部側には、メン−１−液１
２を上部から供給するメツ；１−液容器１６が配置され
ており、このメッキ液容器１６内のウェハ１１に対向す
る部分には細目状をなすプラチナ（ＰＬ）陽梅１７が設
けられ、かつメン−）−液容器１６には脱泡孔１８が形
成されている。１９はメッキ液容器１６に設けられた陰
極側接触部であり、ウェハ１１と接触することによりウ
ェハ１１を陰極どなし、メッキを可能にするものである
。FIG. 1 is a diagram explaining the principle of the present invention. In the same figure, I
Nma wafer, 12 is mekkin night, 13 is mekkin night 12
The air bubbles 14 contained in the wafer 14 are fine particles contained in the Meji F liquid 12. The wafer 11 is placed facing upward, and its back surface is tightly placed on a vacuum table 15 which is evacuated. Also, on the upper side of the wafer 11, a men-1-liquid 1
2 is supplied from above; 1- A liquid container 16 is disposed, and a fine platinum (PL) plate 17 is provided in the portion facing the wafer 11 in this liquid container 16, and A defoaming hole 18 is formed in the liquid container 16 . Reference numeral 19 denotes a cathode-side contact portion provided in the plating solution container 16, which, by contacting the wafer 11, converts the wafer 11 into a cathode to enable plating.
本発明の目的は、上向きにし背面保護をしたウェハ１１
の上方からメッキ液１２が供給され、このメッキ液１２
の中に含まれる気泡１３や微粒子１４をウェハ１１の上
方でメッキ系から除去するメッキ液容器１６に形成した
脱泡孔１Ｂなどの機構を備えることを特徴とするメッキ
方法によって解決される。The object of the present invention is to
A plating solution 12 is supplied from above, and this plating solution 12
This problem is solved by a plating method characterized by having a mechanism such as a degassing hole 1B formed in the plating solution container 16 for removing air bubbles 13 and fine particles 14 contained in the plating system from the plating system above the wafer 11.
（作用〕
本発明では、上向きに置かれたウェハ１１の上方からメ
ッキ液１２が供給されるため、このメッキ液１２の中に
気泡１３や微粒子Ｉ４があると、メッキ液容２３１８の
上面に形成された脱泡孔１９から、あふれ出るメッキ液
１２とともにメッキ系から除去される。(Function) In the present invention, since the plating solution 12 is supplied from above the wafer 11 placed facing upward, if there are air bubbles 13 or particulates I4 in the plating solution 12, they will form on the upper surface of the plating solution container 2318. The plating solution 12 is removed from the plating system together with the plating solution 12 overflowing through the defoaming hole 19.
従って、気泡１３や微粒子１４が一旦はウェハ１１に付
着したとしても、メッキ中絶えずメッキ液１２を流しつ
づけることにより、やがては脱泡孔１９から外へ除かれ
、不良メッキをおこしにくくなる。Therefore, even if bubbles 13 and particles 14 once adhere to the wafer 11, by continuously flowing the plating solution 12 during plating, they will eventually be removed from the defoaming holes 19, making it difficult to cause defective plating.
以下、本発明を図示の一実施例により具体的に説明する
。Hereinafter, the present invention will be specifically explained with reference to an illustrated embodiment.
第２図は本発明実施例のメッキ装置の構成図である。な
お、第１図に対応する部分は同一の符号を記す。FIG. 2 is a block diagram of a plating apparatus according to an embodiment of the present invention. Note that parts corresponding to those in FIG. 1 are denoted by the same reference numerals.
同図において、１１はウェハ、１２はメッキ液、１５は
ウェハ１１を受ける真空テーブル、１６はウェハ１１の
上方に配置されるメッキ液容器１６．１７はプラチナ（
ｐ ｔ）陽極、１日はメッキ液容器１６に形成された脱
泡孔、１９はメッキ液容器１６に設けられた陰極側接触
部である。そして、真空テーブル１５の側面は装置ボッ
クス２０で底部まで滑らかな曲板で覆われている。これ
は脱泡孔１９からあふれたメッキ液１２が装置ボックス
２０の底部に設けられたドレイン部２１に至までの間に
波立って無用な泡を生じさせないようになっている。こ
の装置ボックス２０の一側部には、ウェハ搬入口２２が
形成され、このウェハ搬入口２２から入れられたウェハ
１１は真空テーブル１５に上向きに載せられ、真空に引
かれる。ウェハ１１が真空テーブル１５に密着したら、
装置ボックス２０内に配置されたメッキ液容器支持アー
ム２３の下降運動によりメッキ液容Ｒ３１６は、ウェハ
１１の上にかぶさる。このとき、陰極側接触部１９とウ
ェハ１１の接触、及びメッキ液容器内の陰揄配線２４ａ
、２４ｂと真空テーブル側陰極配線２５ａ、２５ｂ 、
さらにメンキ液容器内陽極配線２６と真空テーブル側陽
極配線２７のそれぞれの対が良好な接触をおこなえるよ
うにすることが重要である。ここでメツ−ｔ−？（１，
容器内の陰極配線２４ａ、２４ｂと真空テーブル側陰極
配線２５ａ。In the figure, 11 is a wafer, 12 is a plating solution, 15 is a vacuum table that receives the wafer 11, 16 is a plating solution container 16 placed above the wafer 11, and 17 is a platinum (platinum)
pt) Anode, 1st is a defoaming hole formed in the plating solution container 16, and 19 is a cathode side contact part provided in the plating solution container 16. The sides of the vacuum table 15 are covered with a smooth curved plate up to the bottom of the device box 20. This is to prevent the plating solution 12 overflowing from the degassing hole 19 from rippling and creating unnecessary bubbles while reaching the drain section 21 provided at the bottom of the apparatus box 20. A wafer loading port 22 is formed in one side of the apparatus box 20, and the wafer 11 loaded through the wafer loading port 22 is placed upward on a vacuum table 15 and evacuated. Once the wafer 11 is in close contact with the vacuum table 15,
The plating liquid container R316 covers the wafer 11 by the downward movement of the plating liquid container support arm 23 disposed in the apparatus box 20. At this time, the contact between the cathode side contact portion 19 and the wafer 11, and the negative wiring 24a in the plating solution container.
, 24b and vacuum table side cathode wiring 25a, 25b,
Furthermore, it is important that each pair of the anode wiring 26 inside the liquid container and the anode wiring 27 on the vacuum table side can make good contact. Metsu-t- here? (1,
Cathode wiring 24a, 24b inside the container and cathode wiring 25a on the vacuum table side.
２５ｂの対はウェハ１１の一枚当たり３個程度あればよ
い。また、メッキ液容器内陽極配線２６と真空テーブル
側陽極配線２７の対はウェハ１１の一枚当たり１個でよ
い。このメッキ液容器１６のセツティングまでは、メッ
キ液１２は流さないでおく。セツティングが完了したら
メッキ液１２をポンプで送入する。The number of pairs 25b may be about three per wafer 11. Further, the number of pairs of the anode wiring 26 inside the plating solution container and the anode wiring 27 on the vacuum table side may be one per each wafer 11. The plating solution 12 is not allowed to flow until the plating solution container 16 is set. When the setting is completed, the plating solution 12 is pumped in.
メッキ液１２は、メッキ液容器１６の上部に接続された
柔軟な材質の配管２８を通ってウェハ１１の表面まで達
するが、ずぐに脱泡孔１９からあふれ出す。脱泡が完了
したら通電してメッキをはじめる。メッキが終了したら
メッキ液１２の流れを止め、通電をやめ、メッキ液容器
支持アーム２３を上昇させてウェハ１１を取り出せばよ
い。メッキ液容器ＩＣの上部に逆流防止弁２９を備えて
おけば、次のウェハ１１にメッキ液１２を送るときの初
期状態において配管２８内に空気が入ったりしないので
無用な泡を与えることなくメッキ液１２を供給できる。The plating solution 12 reaches the surface of the wafer 11 through a flexible pipe 28 connected to the upper part of the plating solution container 16, but immediately overflows from the defoaming hole 19. Once degassing is complete, power is applied and plating begins. When plating is completed, the flow of the plating solution 12 is stopped, the electricity is turned off, the plating solution container support arm 23 is raised, and the wafer 11 is taken out. If a backflow prevention valve 29 is provided at the top of the plating solution container IC, air will not enter the pipe 28 in the initial state when sending the plating solution 12 to the next wafer 11, so plating can be performed without creating unnecessary bubbles. Liquid 12 can be supplied.
上記のメッキ方法によれば、真空テーブル１５上に上向
きに霞かれたウェハ１１には、上方のメッキ液容器１６
からメッキ液１２が供給されるため、このメツ＝１”
／（ｉ １２の中に気泡１３や微粒子１４があると、メ
ッキ液容器１６の上面に形成された脱泡孔１９から、あ
ふれ出るメッキ液１２とともにメッキ系から除去される
。従って、気泡１３や微粒子１４が一旦はウェハ１１に
何着したとしても、メッキ中絶えずメッキ液１２を流し
つづけることにより、やがてば脱泡孔１９から外へ除か
れ、気泡１３や微粒子１４をメツ；１一部分に捕獲した
状態のままメッキが行われることがなくなり、不良メッ
キをおこしにくくなる。According to the above-mentioned plating method, the wafer 11 that is hazy upward on the vacuum table 15 is placed in the plating solution container 16 above.
Since the plating solution 12 is supplied from
/(i If there are air bubbles 13 or particulates 14 in the plating solution container 16, they will be removed from the plating system together with the plating solution 12 overflowing from the degassing hole 19 formed on the top surface of the plating solution container 16. No matter how many particles 14 land on the wafer 11, by continuously flowing the plating solution 12 during plating, they will eventually be removed from the defoaming hole 19, and the air bubbles 13 and particles 14 will be captured in a portion of the wafer 11. Since plating is not performed in the same state as before, defective plating is less likely to occur.
なお、本発明においては、上向きに置かれたつエバの上
方からメッキ液を供給し、このメッキ液を上方に設けら
れ脱泡孔からあふれ出るメッキ液とともに気泡や微粒子
をメッキ系から除去してメッキすればよい。In the present invention, the plating solution is supplied from above the evaporator placed upward, and the plating solution is used together with the plating solution overflowing from the defoaming holes provided above to remove air bubbles and fine particles from the plating system. do it.
以上説明した様に本発明によれば、上向きに置かれたウ
ェハの上方からメッキ液を供給し、メッキ液容器の上面
に形成した脱泡孔から、あふれ出るメッキ液とともに気
泡や微粒子をメンキ系から除去することで、ウェハ表面
のレジストパターンに気泡や微粒子を残したままメッキ
を行うことがなくなるという効果を奏し、良好なバンプ
を形成することができ、歩留りの向上に寄与するところ
が大きい。As explained above, according to the present invention, the plating solution is supplied from above the wafer placed facing upward, and air bubbles and fine particles are removed from the overflowing plating solution through the defoaming hole formed on the top surface of the plating solution container. By removing it from the surface of the wafer, plating is not performed with bubbles or particles remaining in the resist pattern on the wafer surface, and good bumps can be formed, which greatly contributes to improving yield.
第１図は本発明の原理説明図
第２図は本発明実施例のメッキ装置の構成図、第３図（
ａ）〜（ｃ）は金バンプ形成方法を示す断面図、
第４図は従来の金メッキ装置の図、
第５図（ａ）と（ｂ）は従来例の問題点を示す断面図で
ある。
図中、
１１はウェハ、
１２はメッキ液、
１３は気泡、
１４は微粒子、
１５は真空テーブル、
１６はメッキ液容器、
１７はプラチナ（１’ｔ）陽極、
１Ｂはル２泡孔、
１９は陰極（ｊｌ、＋１接触部、
２０は装置ボックス、
２１はドレイン部、
２２はウェハ搬入口、
２３はメッキ液容器支持アーム、
２４ａ、２４ｂはメッキ液容器内の陰極配線、２５ａ、
２５ｂは真空テーブル側陰極配線、２６はメッキ液容器
内陽極配線、
２７は真空テーブル側陽極配線、
２８は配管、
２９は逆流防止弁、
４１はメインタンク、
４２はサブタンク、
４３はメッキ部、
４４はメッキ液、
４５はマグネット・ポンプ、
４６ａ 、４（ｉｂは１１２ポンプ、
４７は活性炭フィルター
４８は濾過フィルター
４９は熱電対、
５０はウェハ（カソード）、
５１はアノード、
５２は爪
を示す。
ノ・・キ、奄、芹ノお向
特許出願人 富士通株式会社
代理人弁理士 久木元 彰
同 大菅義之
本発馴の原理既馴図
第１図Fig. 1 is an explanatory diagram of the principle of the present invention. Fig. 2 is a configuration diagram of a plating apparatus according to an embodiment of the present invention. Fig. 3 (
a) to (c) are cross-sectional views showing a gold bump forming method, FIG. 4 is a diagram of a conventional gold plating apparatus, and FIGS. 5(a) and (b) are cross-sectional views showing problems in the conventional example. In the figure, 11 is a wafer, 12 is a plating solution, 13 is a bubble, 14 is a particle, 15 is a vacuum table, 16 is a plating solution container, 17 is a platinum (1't) anode, 1B is a double hole, and 19 is a Cathode (jl, +1 contact part, 20 is the equipment box, 21 is the drain part, 22 is the wafer loading port, 23 is the plating solution container support arm, 24a, 24b is the cathode wiring in the plating solution container, 25a,
25b is the cathode wiring on the vacuum table side, 26 is the anode wiring in the plating solution container, 27 is the anode wiring on the vacuum table side, 28 is piping, 29 is the check valve, 41 is the main tank, 42 is the sub tank, 43 is the plating section, 44 45 is a plating solution, 45 is a magnet pump, 46a and 4 (ib are 112 pumps, 47 is an activated carbon filter 48 is a filtration filter 49 is a thermocouple, 50 is a wafer (cathode), 51 is an anode, and 52 is a nail. ...Ki, Am, Serino Omukai Patent Applicant Fujitsu Limited Representative Patent Attorney Akito Kuki Yoshinomoto Osuga Principles of Origin Figure 1
Claims (1)
１２）を供給し、このメッキ液（１２）に含まれる気泡
（１３）や微粒子（１４）をウェハ（１１）の上方の脱
泡孔（１８）から除去してメッキすることを特徴とする
半導体装置の製造方法。Plating solution (
12), and plating is performed by removing air bubbles (13) and fine particles (14) contained in the plating solution (12) from a defoaming hole (18) above the wafer (11). Method of manufacturing the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63279423A JP2648945B2 (en) | 1988-11-07 | 1988-11-07 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63279423A JP2648945B2 (en) | 1988-11-07 | 1988-11-07 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02129393A true JPH02129393A (en) | 1990-05-17 |
| JP2648945B2 JP2648945B2 (en) | 1997-09-03 |
Family
ID=17610875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63279423A Expired - Lifetime JP2648945B2 (en) | 1988-11-07 | 1988-11-07 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2648945B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11238704A (en) * | 1998-02-23 | 1999-08-31 | Ideya:Kk | Method and device for plating wiring grooves of semiconductor substrate |
| KR20030073398A (en) * | 2002-03-11 | 2003-09-19 | 윤희성 | Reverse fountain type plating apparatus |
| KR100455219B1 (en) * | 2002-05-30 | 2004-11-06 | 김용욱 | Plating system for wafer |
| US10267848B2 (en) | 2008-11-21 | 2019-04-23 | Formfactor Beaverton, Inc. | Method of electrically contacting a bond pad of a device under test with a probe |
| WO2024104256A1 (en) * | 2022-11-18 | 2024-05-23 | 天合光能股份有限公司 | Electroplating device for solar cell, and electroplating apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6449244A (en) * | 1987-08-19 | 1989-02-23 | Mitsubishi Electric Corp | Jet plating equipment |
| JPH01294888A (en) * | 1988-05-19 | 1989-11-28 | Mitsubishi Electric Corp | Electrolytic plating equipment |
-
1988
- 1988-11-07 JP JP63279423A patent/JP2648945B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6449244A (en) * | 1987-08-19 | 1989-02-23 | Mitsubishi Electric Corp | Jet plating equipment |
| JPH01294888A (en) * | 1988-05-19 | 1989-11-28 | Mitsubishi Electric Corp | Electrolytic plating equipment |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11238704A (en) * | 1998-02-23 | 1999-08-31 | Ideya:Kk | Method and device for plating wiring grooves of semiconductor substrate |
| KR20030073398A (en) * | 2002-03-11 | 2003-09-19 | 윤희성 | Reverse fountain type plating apparatus |
| KR100455219B1 (en) * | 2002-05-30 | 2004-11-06 | 김용욱 | Plating system for wafer |
| US10267848B2 (en) | 2008-11-21 | 2019-04-23 | Formfactor Beaverton, Inc. | Method of electrically contacting a bond pad of a device under test with a probe |
| WO2024104256A1 (en) * | 2022-11-18 | 2024-05-23 | 天合光能股份有限公司 | Electroplating device for solar cell, and electroplating apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2648945B2 (en) | 1997-09-03 |
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