JP4553632B2 - Substrate plating method and substrate plating apparatus - Google Patents

Description

  The present invention relates to a substrate plating method and a substrate plating apparatus for performing plating on a surface to be plated of a substrate, and more particularly to fine wiring grooves and holes provided on a surface to be plated of a substrate such as a semiconductor wafer, and a resist opening. The present invention relates to a substrate plating method and a substrate plating apparatus for forming a plating film or forming bumps (projecting electrodes) for electrically connecting a semiconductor chip and a substrate on a surface to be plated of a semiconductor wafer.

  Conventionally, for example, in TAB (Tape Automated Bonding) and flip chips, gold, copper, solder, or nickel is formed on a predetermined portion (electrode) on the surface of a semiconductor chip on which wiring is formed, and a protruding shape in which these are laminated in multiple layers. It is widely performed that a connection electrode (bump) is formed and electrically connected to a substrate electrode or a TAB electrode through the bump. There are various bump forming methods such as electroplating, vapor deposition, printing, and ball bump. However, miniaturization is possible as the number of I / Os in the semiconductor chip increases and the pitch decreases. Many electrolytic plating methods with relatively stable performance are being used.

  Here, the electrolytic plating method includes a jet type or a cup type in which a surface to be plated of a substrate such as a semiconductor wafer is placed downward (face down), and a plating solution is sprayed from below to perform plating. The dip type is roughly classified into a dip type in which the substrate is vertically placed, the plating solution is poured from the bottom of the plating tank and overflowed while the substrate is immersed in the plating solution. In the electrolytic plating method using the dip method, the plating is performed with the substrate standing vertically so that bubbles generated on the surface of the substrate to be plated can be easily removed and the surface of the substrate to be plated is treated. This is to make it difficult for particles and the like to adhere to the surface. The electrolytic plating method in which plating is performed with the substrate standing vertically is suitable for high-speed plating because bubbles due to a violent reduction reaction during high-speed plating can be easily removed.

  FIG. 3 is a diagram showing a schematic configuration of a conventional dip type substrate plating apparatus. As shown in the figure, the plating apparatus 100 is provided with an overflow tank 111 so as to surround the outer periphery of the plating tank 110, and an anode 113 held by an anode holder 112 and a substrate held by a substrate holder 114 inside the plating tank 110. W is placed facing each other, and an intermediate mask 115 and a paddle 116 are placed between the installed anode 112 and the substrate W.

  The plating solution circulation means 120 includes a reservoir tank 121, a circulation pump 122, a constant temperature unit 123, and a filter 124. By starting the circulation pump 122, the plating solution Q in the reservoir tank 121 is supplied from the bottom of the plating tank 110 through the pipe 126, the constant temperature unit 123 and the filter 124, and the plating solution Q overflowing the upper end of the plating tank 110 is overflowed. 111 and is returned to the reservoir tank 121 through the pipe 127. The liquid level of the plating solution Q in the overflow tank 111 is prevented from rising above its highest liquid level by the pipe 125. By energizing between the anode 113 and the substrate W, electrolytic plating is performed on the to-be-plated surface W1 of the substrate W. At this time, since the to-be-plated surface W1 of the substrate W immersed in the plating solution Q is in the up-and-down direction, air bubbles that adversely affect the quality of plating are good. For this reason, bubbles can be easily degassed by vigorous reduction reaction during high-speed plating, and high-speed plating is possible and high-reliability plating can be performed.

Further, in the electroplating apparatus employing the conventional dip method, the substrate W such as a semiconductor wafer is detachably held by sealing the outer peripheral end surface and the back surface and exposing the surface (surface to be plated). A holder 114 is provided, and the substrate holder 114 is immersed in the plating solution Q together with the substrate W so as to plate the surface W1 to be plated of the substrate W. By adopting this substrate holder 114, the substrate W is mounted on the substrate holder 114 only once by a sealing operation, and the plating operation of the multilayer material can be continuously performed in different plating baths while being sealed. Since the repeated sealing work for the substrate W is not required, the problem of sealing solution leakage of the plating solution due to the sealing surface of the soft resist on the substrate surface caused by the repeated sealing, which is plagued by the multi-layer plating, does not occur.
JP 2002-36397A JP 2004-43936 A

  However, in the electroplating method employing the above-described conventional dip method, the substrate holder 114 is used in order to supply electricity to the substrate W, prevent leakage of the plating solution to the non-plated portion of the substrate W, and ensure safe transportation. When the substrate W is plated, the holder 114 is immersed in a vertically standing state in the plating solution Q in the plating tank 110 and is transferred from the plating tank 110 when transported. The amount of Q taken out is large. Therefore, there are problems such as consumption and deterioration of the plating solution in the plating tank 110 to be taken out, contamination of the next different plating solution tank brought in, and the use of a large amount of pure water in the cleaning process to prevent it. In addition, the life of the plating solution and the stability of mass production, that is, the reliability of the plated product is impaired. Moreover, there is a problem that the size of the plating tanks arranged in large numbers as a production line contributes to the enlargement of the apparatus.

  SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and its purpose is to simplify the sealing structure of the substrate holder and reduce the plating solution by taking out the plating solution in order to reduce the size and performance of the plating apparatus. An object of the present invention is to provide a highly reliable substrate plating method and plating apparatus by reducing deterioration of the substrate.

In order to solve the above-mentioned problem, the invention according to claim 1 is a substrate plating method for electrolytically or electrolessly plating a surface to be plated of a substrate, wherein the substrate is held on a plate-shaped substrate holder, and the substrate The holder is placed in the vertical direction with a sealing material interposed in the vicinity of the outer periphery of the substrate on the outer side wall of the plating tank containing the plating solution, or with a porous material, or with a fine gap between the outer side surface of the side wall. disposed in the mounting, the plating process by contacting the plating solution through an opening provided opposite to said plating surface on the side wall of the plating tank to be plated surface of the substrate held by the substrate holder When the substrate holder is attached to and removed from the outer side wall of the plating tank, the opening provided in the side wall of the plating tank is closed from the inner wall side of the plating tank by a barrier plate .

  According to a second aspect of the present invention, in the substrate plating method according to the first aspect, the porosity of the porous material or a fine gap between the outer side surface of the plating tank side wall and the substrate holder is adjusted. Alternatively, the distribution of the amount of the plating solution leaking from the gap to the periphery of the substrate holder is precisely adjusted on the surface of the substrate to be plated.

The invention according to claim 3, in the substrate plating method according to claim 2, while performing the plating process, the pores of the porous material, or a fine between the substrate holder and the plating tank side wall outer surface The plating solution leaking from the gap around the substrate holder is returned to the plating tank.

The invention according to claim 4 is a substrate plating apparatus for electrolytically or electrolessly plating the surface to be plated of the substrate, comprising a plate-like substrate holder for holding the substrate, and holding the substrate. Place the substrate holder on the outer surface of the side wall of the plating tank containing the plating solution with a sealing material in the vicinity of the outer periphery of the substrate, or with a porous material, or with a fine gap between the upper surface and the outer surface of the side wall. In addition to mounting the substrate holder on the side wall of the plating tank, an opening is provided on the side wall of the plating tank facing the surface to be plated of the substrate held by the substrate holder, and the substrate holder is attached to the outer side surface of the side wall of the plating tank. In this case, a weir plate that closes an opening provided on the side wall of the plating tank is attached to the inner side wall of the plating tank .

According to a fifth aspect of the present invention, in the substrate plating apparatus according to the fourth aspect, the porosity of the porous material or the fine gap between the plating tank side wall outer surface and the substrate holder is adjusted. The liquid amount distribution of the plating solution leaking from the gap to the periphery of the substrate holder on the surface to be plated of the substrate is precisely adjusted.

According to a sixth aspect of the present invention, in the plating apparatus according to the fifth aspect of the present invention, while the plating process is being performed, the porosity of the porous material or the fineness between the outer side surface of the side wall of the plating tank and the substrate holder is small. A plating solution circulation means is provided for returning the plating solution leaking from the gap to the periphery of the substrate holder into the plating tank.

According to the invention described in the present invention , the substrate holder holding the substrate is interposed between the outer peripheral portion of the substrate on the outer side wall of the plating tank, the porous material, or between the outer side surface of the side wall. A fine gap is provided in the vertical direction, and the plating solution is brought into contact with the plating surface of the substrate held by the substrate holder through an opening provided on the side wall of the plating tank so as to face the plating surface. Since the plating area is small, the area where the substrate holder is exposed to the plating solution is small, and the amount of plating solution taken out by the substrate holder is small. Therefore, the plating solution is less consumed and deteriorated, and the stability of the plating amount is improved. A plating method can be provided.

According to the invention described in the present invention , by adjusting the fine gap between the porous material or the outer side surface of the plating tank side wall and the substrate holder, the plating solution leaking from the porous or the gap to the periphery of the substrate holder. Since the liquid amount distribution on the surface of the substrate to be plated is precisely adjusted, a uniform plating film can be formed on the surface of the substrate to be plated.

According to the invention described in the present invention, when installing / removing the substrate holder, the weir plate that closes the opening provided on the side wall of the plating tank is attached to the inner side wall of the plating tank. It can be performed easily and the plating solution level in the plating tank can be maintained.

According to the invention described in the present invention , during the plating process, the plating solution that leaks around the substrate holder from the pores of the porous material or the fine gap between the outer side surface of the plating tank side wall and the substrate holder is plated. Since it returns to a tank, it becomes possible to maintain the plating solution level in the plating tank during plating substantially constant.

According to the invention described in the present invention , the substrate holder holding the substrate is interposed between the outer peripheral surface of the substrate on the outer side surface of the side wall of the plating tank, the porous material is interposed, or between the outer surface of the side wall. A small gap is provided in the vertical direction and mounted, and the side wall of the plating tank is provided with an opening facing the surface to be plated of the substrate held by the substrate holder, so that the substrate holder is exposed to the plating solution. Since the plating area is small and the amount of plating solution taken out by the substrate holder is small, the plating solution is less consumed and deteriorated, and the plating tank configuration that causes contamination of the plating solution can be improved. Plating equipment can be provided. Moreover, since it is the structure which attaches the board | substrate holder holding a board | substrate to the side wall outer surface of a plating tank, a plating tank can be made small and the usage-amount of a plating solution can also be reduced. In addition, since the plating process and the pre-plating process and / or the post-plating process can be performed while holding the substrate on the substrate holder, the plating apparatus and the pre-processing apparatus and / or the post-processing apparatus are provided separately. There is no need to reduce the size and cost of the device.

According to the invention described in the present invention , by adjusting the fine gap between the porous material or the outer side surface of the plating tank side wall and the substrate holder, the plating solution leaking from the porous or the gap to the periphery of the substrate holder. Since the liquid amount distribution on the surface of the substrate to be plated is precisely adjusted, a uniform plating film can be formed on the surface of the substrate to be plated.

According to the invention described in the present invention, when installing / removing the substrate holder, the weir plate that closes the opening provided on the side wall of the plating tank is attached to the inner side wall of the plating tank. Since it can be performed easily and the plating solution level in the plating tank can be maintained, the consumption of the plating solution can be reduced.

According to the invention described in the present invention , during the plating process, the plating solution that leaks around the substrate holder from the pores of the porous material or the fine gap between the outer side surface of the plating tank side wall and the substrate holder is plated. Since the plating solution circulation means for returning to the inside of the bath is provided, the plating solution level in the plating bath during plating can be kept substantially constant, and the consumption of the plating solution can be reduced.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of a plating apparatus 10 according to an embodiment of the present invention. As shown in the figure, the plating apparatus 10 is provided with an overflow tank 12 so as to surround the outer periphery of the plating tank 11. Inside the plating tank 11, the anode 14 held by the anode holder 13 and the substrate W held by the substrate holder 15 are installed facing each other, and the intermediate mask 16 and the paddle 17 are placed between the installed anode 14 and the substrate W. Is installed. On the other hand, outside the overflow tank 12, when the substrate holder 15 is attached and detached, a weir plate 18 for holding the plating liquid surface in the plating tank 11 and a plating solution circulation means for circulating the plating solution Q in the plating tank 11. 30 and so on. Each component will be described below.

  The plating tank 11 is formed in a box shape having an open upper surface, and is configured such that the plating solution Q stored in the plating tank 11 overflows from the upper end side of the plating tank 11.

  The anode 14 has a disk shape and is held by the anode holder 13 so as to stand upright in the plating solution Q. Further, the intermediate mask 16 is provided with a central hole 16a corresponding to the size of the substrate W, thereby lowering the potential of the peripheral portion of the substrate W and equalizing the film thickness of the plating film in each portion of the substrate W. A current necessary for electrolytic plating is passed between the anode 14 and the substrate W.

  The paddle (stirring bar) 17 is reciprocated in parallel with the surface to be plated W1 of the substrate W (in FIG. 1, parallel to the front and back of the paper surface), thereby plating along the surface to be plated of the substrate W. The flow of the liquid Q is made more uniform over the entire surface to be plated W1, and a plating film having a more uniform film thickness is formed over the entire surface to be plated of the substrate W.

  The substrate holder 15 that holds the substrate W is installed on the outer surface on the side wall side where the opening 19 of the plating tank 11 is formed, and the back surface of the substrate holder 15 is not inserted into the plating solution Q and does not get wet with the plating solution Q. Only the surface to be plated W1 exposed to the outside of the substrate W is placed so as to face the plating solution Q and stand up and down (vertical direction). Therefore, compared to inserting a substrate holder holding the substrate in the plating solution in the conventional plating apparatus, in this embodiment, the area of the surface of the substrate holder 15 in contact with the plating solution Q is small, so the plating solution Q is taken out. The amount is greatly reduced. Further, the substrate holder 15 can be installed on the side wall of the plating tank 11 to reduce the size of the plating tank 11. Accordingly, the overall size of the plating apparatus and the amount of plating solution Q used are also reduced.

  The substrate holder 15 is installed on the outer side wall of the plating tank 11 in which the opening 19 is formed, and a seal is interposed on the outer side wall of the plating tank 11, or the porous material 20 is interposed between the outer side wall and the side wall. A small gap is provided between the outer side and the outside. When the porous material 20 is provided between the substrate holder 15 and the side wall outer surface of the plating tank 11, the porous material 20 is in a ring shape and is interposed between the outer peripheral portion of the opening 19 on the side wall outer surface and the substrate holder 15, As shown in FIGS. 2A and 2B, a ring-shaped member is provided with a large number of pores 20a in the radial direction (radial), and the substrate holder for the plating solution Q depends on the size of the pores and the distribution situation. The distribution of the amount of leaked liquid from around 15 is precisely controlled. That is, as described later, the flow rate distribution of the plating solution on the surface to be plated of the substrate W is controlled to be uniform. When a gap is provided between the substrate holder 15 and the side wall of the plating tank 11 in which the opening 19 is formed, the structure of the substrate holder 15 is further simplified by adjusting the gap.

  For example, depending on the depth of the plating solution Q, if it is deep, the diameter of the pores 20a of the porous material 20 is reduced or the interval between the pores 20a is increased, so that the vertical direction (vertical direction) is increased. With respect to the standing substrate W, the flow of the plating solution Q can be adjusted to be more uniform. Here, FIG. 2A is a plan view of the porous material 20 viewed from the plating tank 11 side, and FIG. 2B is a side view thereof. In addition, a large number of fine grooves 20b may be provided in the radial direction (radially) on the ring-shaped member as shown in FIG. The porous material 20 having these pores 20a or narrow grooves 20b is configured to be sandwiched between the substrate holder 15 and the opened plating tank 11. Further, the distance between the anode 14 and the substrate W can be finely adjusted depending on the thickness of the porous material 20.

  Returning to FIG. 1, when the substrate holder 15 is not installed outside the side wall of the plating tank 11, the barrier plate 18 is inserted into the inner wall of the plating tank 11, thereby opening 19 formed in the side wall of the plating tank 11. Is blocked (shielded), and the level of the plating solution Q in the plating tank 11 can be maintained. Further, when the substrate holder 15 is installed outside the side wall of the plating tank 11, the substrate holder 15 is installed outside the side wall of the plating tank 11 while the weir plate 18 is inserted inside the plating tank 11. Is removed from the inner side wall of the plating tank 11 and temporarily left on the side wall of the overflow tank 12. A position A in FIG. 1 indicates a position where the weir plate 18 is pulled up from the plating solution Q and temporarily left on the side wall of the overflow tank 12. When the plating of the substrate W is completed, the barrier plate 18 is inserted back into the inner wall (position B indicated by the dotted line) of the plating tank 11 again, and the substrate holder 15 is removed from the side wall while maintaining the liquid level of the plating solution Q. Remove from the side.

  The plating solution circulating means 30 connects the bottom surface of the overflow tank 12 and the reservoir tank 31 by a pipe 32, and also connects the highest water level position of the plating solution Q in the overflow tank 12 and the reservoir tank 31 by a pipe 33. 11 and the reservoir tank 31 are connected by a pipe 34, and a circulation pump 35, a constant temperature unit 36, and a filter 37 are attached to the pipe 34. The pipe 32 collects the plating solution Q overflowed into the overflow tank 12 in the reservoir tank 31 so that the water level of the plating solution Q in the overflow tank 12 does not rise above the maximum water level. The plating solution Q in 31 is supplied from the bottom surface of the plating tank 11.

  Next, the process of performing the plating process on the to-be-plated surface W1 of the substrate W using the plating apparatus having the above configuration will be described. There are various types of plating. For example, the same can be used in copper plating, nickel plating, solder plating, and further gold plating. First, as shown in FIG. 1, the substrate holder 15 holding the substrate W is set outside the side wall of the plating tank 11. At this time, the substrate W held by the substrate holder 15 is disposed so as to face the opening 19, and the to-be-plated processing surface W <b> 1 is in a state of being vertically raised on the outer side surface of the side wall of the plating tank 11. By starting the circulation pump 35, the plating solution Q in the reservoir tank 31 is adjusted to a temperature suitable for plating by the constant temperature unit 36, and further, particles and the like are removed by the filter 37, and then supplied to the plating tank 11.

  The plating solution Q supplied into the plating tank 11 circulates in the plating tank 11, overflows from the upper end side of the plating tank 11, and moves to the overflow tank 12. The plating solution Q accumulated in the overflow tank 12 is collected in the reservoir tank 31 through the pipe 32. The level of the plating solution Q in the overflow tank 12 is prevented from rising above its highest water level by the pipe 33.

  On the other hand, a part of the plating solution Q in the plating tank 11 leaks into the porous material 20 from a gap formed between the substrate holder 15 and the side wall of the plating tank 11 or the porous material 20 (see FIG. 2A).

  Then, the paddle 17 is reciprocally translated relative to the surface to be plated W1 of the substrate W (moved in the front and back direction in FIG. 1) so that the flow of the plating solution Q along the surface to be plated W1 of the substrate W is covered. Energization is performed between the anode 14 and the substrate W while making the entire surface of the plating treatment surface W1 more uniform, whereby electrolytic plating is performed on the treatment surface W1 of the substrate W. At this time, since the to-be-plated surface W1 of the substrate W immersed in the plating solution Q is in the up-and-down direction, air bubbles that adversely affect the quality of plating are good. For this reason, bubbles can be easily degassed by vigorous reduction reaction during high-speed plating, and high-speed plating is possible and high-reliability plating can be performed.

  By the way, when the plating solution Q is allowed to flow upward from the bottom of the plating bath 11 while the substrate W is standing up and down on the outer side wall of the plating bath 11 as described above, the plating solution Q is always applied to the substrate W. Since it is supplied from the lower part to the upper part of the plating process surface W1, uneven flow velocity occurs in each part of the process target surface W1 of the substrate W, and plating is performed between the upper part and the lower part of the process target surface W1 of the substrate W. There is a possibility that a slight difference may occur in the film thickness of the plating depending on the location of the surface to be plated W1 due to slightly different conditions (the plating film thickness at the lower part of the surface to be plated W1 is the upper plating film thickness). Will be thicker). Moreover, the current density (electric field distribution) of each part of the to-be-plated surface W1 of the substrate W may be uneven.

  However, in the present embodiment, when the substrate W is plated, in addition to the stirring action of the paddle 17, the plating solution leaks uniformly from the outer peripheral portion of the substrate W through the pores 20 a of the porous material 20. The plating conditions for each portion of W to be plated W1 are the same, and the plating film thickness is uniform. The speed and flow rate of the plating solution Q leaking from the outer periphery of the substrate W vary depending on the type of plating, the size of the substrate W, the characteristics of the plating solution Q, etc., but generally 0 to 5000 (ml) is preferable, and further 0 -1500 (ml) is preferable, and 20-500 (ml) is more preferable.

  By the way, in this embodiment, if the plating solution Q leaks into the overflow tank 11 from the fine gap formed between the substrate holder 15 and the side wall outer surface of the plating tank 11 or the pore 20a of the porous material 20, The following problems occur. That is, first, the plating solution Q may stay in a gap formed between the substrate holder 15 and the side wall of the plating tank 11, so that crystals of the plating solution Q may be generated. Therefore, in the present embodiment, the porous material 20 is not provided between the substrate holder 15 and the side wall of the plating tank 11, but a seal structure is not required (in other words, a small amount of plating solution is provided) by providing a gap without contact. The structure is simplified (by sealing with fluid resistance by leaking Q), and crystals of the plating solution Q are prevented from flowing by flowing the plating solution Q through the gap. Then, the plating solution Q is discharged from this gap, and this plating solution Q is collected in the overflow tank 12 and circulated to the plating tank 11 by the plating solution circulation means 30.

  A pipe 33 is provided on the side wall of the overflow tank 12, but the plating solution Q collected in the overflow tank 12 is higher than the opening at the highest position of the pipe 33 (the highest water level of the plating solution Q in the overflow tank 12). It is configured not to rise.

  When the plating process of the substrate W is completed as described above, the energization between the anode 14 and the substrate W is stopped to finish the electrolytic plating, and then the weir plate 18 temporarily placed on the side wall of the overflow tank 12 is removed. The substrate is moved to the plating tank 11 and the substrate holder 15 is removed while the plating solution Q is kept at a predetermined water level.

  Moreover, it cannot be overemphasized that the metal plated with each plating apparatus can be changed arbitrarily. For example, by changing the metal to be plated by each plating device, nickel plating, copper plating, and solder plating are sequentially applied to the surface of the substrate W, and bumps and the like are formed by a series of operations by nickel-copper-solder multilayer plating. can do. In addition to this Cu-Ni-solder, bumps by multilayer plating include Cu-Au-solder, Cu-Ni-Au, Cu-Sn, Cu-Pd, Cu-Ni-Pd-Au, Cu-Ni-Pd. , Ni-solder, Ni-Au and the like. As the solder, either a high melting point solder or a eutectic solder may be used. Further, bumps by Sn-Ag multilayer plating or bumps by Sn-Ag-Cu multilayer plating can be formed and annealed to form an alloy. Thereby, unlike the conventional Sn-Pb solder, Pb-free and environmental problems due to lead can be solved.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the technical idea described in the claims and the specification and drawings. Is possible. Note that any shape, structure, or material not directly described in the specification and drawings is within the scope of the technical idea of the present invention as long as the effects and advantages of the present invention are exhibited. For example, in the above-described embodiment, the case where electrolytic plating is performed by installing the anode 14 and energizing the anode 14 and the substrate W has been described. However, the present invention is also applied to electroless plating in which the anode 14 and the intermediate mask 16 are not installed. Can be applied.

  Further, in the above embodiment, there is means for pulling the liquid level holding weir plate 18 upward and temporarily placing it on the side wall of the overflow tank 12, whereby the substrate W to be plated held by the substrate holder 15 is processed. Electrolytic plating can be performed by bringing the surface W1 into contact with the plating solution and facing the blocked anode. The barrier plate 18 of the blocking plate may be attached to the outside of the side wall of the plating tank 11.

  In the above embodiment, the substrate holder 15 holding the substrate W is attached to the outside of the side wall of the plating tank 11 and the structure sandwiching the porous material 20 may be other various structures. In short, the substrate W immersed in the plating solution Q is important. Even in a state where the surface to be plated W1 is erected in the vertical direction, the porous material 20 is formed so that the flow of the plating solution Q is uniform with respect to the surface to be plated W1 in consideration of the pressure difference due to the liquid depth. Any structure may be used as long as the plating solution Q can leak from the surface.

FIG. 4 is a plan view showing the overall configuration of the substrate processing apparatus provided with the plating apparatus according to the present invention. As shown in FIG. 4, the substrate processing apparatus includes two cassette tables 41 on which a cassette 40 for storing a substrate W such as a semiconductor wafer is mounted, and an aligner 42 for aligning the orientation flat or notch of the substrate in a predetermined direction. A spin dryer 57 that rotates the substrate after plating treatment at high speed to dry is provided along the same circumferential direction, and the substrate holder 15 is placed at a position along the tangential direction of the circumference. Then, a substrate attaching / detaching portion 43 for attaching / detaching the substrate to / from the substrate holder 15 is provided, and a substrate transfer device 44 including a transfer robot for transferring the substrate therebetween is disposed at the center position.

  Then, in order from the substrate attaching / detaching portion 43 side, a stocker 44 for storing and temporarily holding the substrate holder 15, a pre-wet tank 45 for improving the hydrophilicity of the surface by immersing the substrate in pure water, and the surface of the substrate The surface of the seed layer formed on the surface of the seed layer 46 is etched with a chemical solution such as sulfuric acid or hydrochloric acid to remove an oxide film having a high electrical resistance, the substrate surface is rinsed with pure water 47, and the substrate after washing is drained. A blow tank 48, a second water washing tank 49 and a copper plating tank 50 are arranged in this order. The copper plating tank 50 is configured by accommodating a plurality of copper plating units 52 (corresponding to the plating tank 12 of FIG. 1) in an overflow tank 51 (corresponding to the overflow tank 12 of FIG. 1). No. 52 accommodates one substrate inside and applies copper plating. In this example, copper plating will be described, but it goes without saying that the same applies to nickel, solder, and gold plating.

  Further, a substrate holder transfer device (substrate transfer device) 53 for transferring the substrate holder 15 together with the substrate W between these devices is provided on the side of these devices. The substrate holder transfer device 53 includes a first transporter 54 for transferring a substrate between the substrate attaching / detaching portion 43 and the stocker 44, a stocker 44, a pre-wet tank 45, a pre-soak tank 46, a first water washing tank 47, A second transporter 55 is provided for transporting the substrate between the second water tank 49, the blow tank 48 and the copper plating tank 50.

  Further, on the opposite side of the substrate holder transfer device 53 across the overflow tank 51, a paddle 17 (see FIG. 1) as a stirring rod that is located inside each copper plating unit 52 and stirs the plating solution is driven. A paddle driving device 56 is disposed.

It is a figure which shows the schematic structural example of the board | substrate plating apparatus which concerns on this invention. It is a figure which shows the structure of a porous material, Fig.2 (a) is the principal part top view which looked at the porous material from the plating tank side, FIG.2 (a), (b) is a side view. It is a figure which shows the example of schematic structure of the conventional plating apparatus. It is a top view of the structural example of the substrate processing apparatus with which the substrate plating apparatus which concerns on this invention was equipped.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Plating apparatus 11 Plating tank 12 Overflow tank 13 Anode holder 14 Anode 15 Substrate holder 16 Intermediate mask 16a Central hole 17 Paddle 18 Dam plate 19 Opening 20 Porous material 20a Pore 20b Narrow groove 30 Plating solution circulating means 31 Reservoir tank 32 Piping 33 Piping 34 Piping 35 Circulating pump 36 Constant temperature unit 37 Filter 40 Cassette 41 Cassette table 42 Aligner 43 Substrate attaching / detaching part 44 Stocker 45 Prewetting tank 46 Brysouk tank 47 First water washing tank 48 Blow tank 49 Second water washing tank 50 Copper plating tank 51 Overflow tank 52 Copper plating unit 53 Substrate holder transport device 54 First transporter 55 Second transporter 56 Paddle drive device 57 Spin dryer

Claims (6)

A substrate plating method for electrolytically or electrolessly plating a surface to be plated of a substrate,
The substrate is held by a plate-shaped substrate holder, and a sealing material is interposed in the vicinity of the outer periphery of the substrate on the outer surface of the side wall of the plating tank in which the plating solution is stored. A fine gap is provided between the outer surface and the upper surface of the substrate, and the substrate is held by the substrate holder. The plating solution is contacted through the opened opening and plated ,
When the substrate holder is attached to and removed from the outer side wall of the plating tank, the opening provided in the side wall of the plating tank is closed from the inner wall side of the plating tank by a barrier plate. Method. In the board | substrate plating method of Claim 1,
The surface of the substrate to be plated of the porous material or the plating solution that leaks from the porous or the gap to the periphery of the substrate holder by adjusting the fine gap between the outer surface of the side wall of the plating tank and the substrate holder. A substrate plating method characterized by precisely adjusting the liquid distribution in the substrate. The plating method according to claim 2 ,
While performing the plating treatment, returning the plating solution leaking to the periphery of the substrate holder from the porous material of the porous material or the fine gap between the outer side surface of the plating tank side wall and the substrate holder to the plating tank. A characteristic substrate plating method. A substrate plating apparatus for electrolytically or electrolessly plating a surface to be plated of a substrate,
A plate-like substrate holder for holding the substrate is provided, and a sealing material is interposed in the vicinity of the outer periphery of the substrate on the outer side surface of the plating tank in which the plating solution is stored in the substrate holder holding the substrate, or porous. A material is interposed, or a fine gap is provided between the outer side surface of the side wall and disposed in the vertical direction, and the side surface of the plating tank is opposed to the surface to be plated of the substrate held by the substrate holder. Te provided with an opening Rutotomoni,
When the substrate holder is attached to and removed from the outer side wall of the plating tank, a dam plate that closes an opening provided in the side wall of the plating tank is attached to the inner side wall of the plating tank. apparatus. In the board | substrate plating apparatus of Claim 4 ,
The surface of the substrate to be plated of the porous material or the plating solution that leaks from the porous or the gap to the periphery of the substrate holder by adjusting the fine gap between the outer surface of the side wall of the plating tank and the substrate holder. Substrate plating apparatus that precisely adjusts the liquid volume distribution at the substrate. The plating apparatus according to claim 5 ,
While performing the plating process, the plating solution which returns to the inside of the plating tank the plating solution leaking around the substrate holder from the pores of the porous material or the fine gap between the outer side surface of the plating tank side wall and the substrate holder. A substrate plating apparatus provided with a liquid circulation means.

Images