JP3877911B2

JP3877911B2 - Plating equipment

Info

Publication number: JP3877911B2
Application number: JP19492299A
Authority: JP
Inventors: 憲一笹部; 明久本郷; 淳次国沢
Original assignee: Ebara Corp
Current assignee: Ebara Corp
Priority date: 1999-07-08
Filing date: 1999-07-08
Publication date: 2007-02-07
Anticipated expiration: 2019-07-08
Also published as: JP2001024308A

Description

【０００１】
【発明の属する技術分野】
本発明は被めっき基板にめっきを施すめっき装置に関し、特に半導体ウエハ等の表面に配線用の微細な溝や穴等が形成された被めっき基板の該溝や穴等を銅等の金属めっきで埋めるのに好適なめっき装置に関するものである。
【０００２】
【従来の技術】
近年、半導体ウエハ等の表面に配線用の微細な溝や穴が形成された被めっき基板の該溝や穴等を埋めるために、銅めっき等の金属めっき装置を用い、金属めっきで該溝や穴等を埋める手法が採用されている。従来、この種のめっき装置として、フェースダウン方式の噴流めっき装置がある。図１は、該フェースダウン方式の噴流めっき装置の構成を示す図である。
【０００３】
フェースダウン方式の噴流めっき装置１００は、図１に示すように、めっき槽１０１を具備すると共に、該めっき槽１０１の上部に半導体ウエハ等の被めっき基板１０２をそのめっき面を下向きにして保持する基板保持具１０３を具備し、めっき液貯留槽１０４内のめっき液Ｑ₁をポンプ１０５により、フィルタ１０６及びめっき液供給管１０７を通して、めっき槽１０１の底部から噴出させ、被めっき基板１０２のめっき面に垂直にめっき液の噴流を当てている。
【０００４】
めっき槽１０１をオーバーフローしためっき液Ｑ₁はめっき槽１０１の外側に配置されためっき液受樋１０８で回収され、めっき液貯留槽１０４に戻るようになっている。めっき電源１０９より、陽極電極１１０と陰極電極（被めっき基板１０２のめっき面）の間に所定の電圧を印加することにより、該陽極電極１１０と被めっき基板１０２のめっき面との間にめっき電流が流れ、被めっき基板１０２のめっき面にめっき膜が形成される。
【０００５】
半導体ウエハ等の基板表面に配線やバンプを形成する方法として、上記噴流めっき方式は基板全体をめっき液に浸漬する浸漬めっきに対して基板の裏面をレジスト等で覆う必要がないという利点を有する。しかし多層配線に銅の電解めっきを用いた場合、銅はシリコン基板内部で極めて拡散性が高いため、銅めっきにおいては、基板の裏面や側面にもめっき液が付着することは、厳重に防止する必要がある。このため、被めっき基板１０２を基板保持具１０３に保持し、シール部材によって基板の裏面や側面にめっき液が付着しないようにシールし、基板のめっき面を下に向け、該めっき面に噴流めっき液を当接させる方法も採用されている。しかし、上記構成の基板保持具に被めっき基板１０２を装着し、めっき面を下にしてめっきを行う方法は、めっき面に気泡が付着しやすいという問題があった。
【０００６】
一方、含リン銅を陽極電極とした電解めっきにおいては、陽極電極表面にブラックフィルムが形成され、このブラックフィルムを一定の状態に保つことがめっき品質を保つ上で重要である。基板を上に向けてめっきを行う場合には、基板の交換時に基板より上に位置する陽極電極がめっき液から空気中に露出し、これによって陽極電極の表面に形成されたブラックフィルムの状態を一定に保つことが困難であった。
【０００７】
【発明が解決しようとする課題】
本発明は上述の点に鑑みてなされたもので、上記問題を解決し、基板のめっき表面に気泡が付着せず、陽極電極表面に形成されたブラックフィルムを安定させることにより、高品質のめっきを安定的に可能にしためっき装置を提供することを目的とする。
【０００８】
【課題を解決するための手段】
上記課題を解決するため請求項１に記載の発明は、被めっき基板のめっきを施す面を上に向けて配置し、該被めっき基板に対向して上方にめっきヘッドを配置し、該めっきヘッドは被めっき基板のめっきを施す面に対向する多数の細孔が形成された多孔体と、該多孔体の上方に配置されためっき液室と、該めっき液室内で被めっき基板のめっきを施す面に対向して配置された陽極電極板とを備え、めっき液室に供給しためっき液が多孔体の多数の細孔を通して前記被めっき基板のめっきを施す面に供給するように構成されており、多孔体はめっき液室内にめっき液の供給を停止し、該多孔体の下に配置された被めっき基板を除去しても、細孔内のめっき面の表面力によりめっき液室内のめっき液を該めっき液室内に保持する機能を備えていることを特徴とする。
【０００９】
上記のように、めっき室の下面に複数の細孔を有する多孔体を設けたことにより、めっき液室にめっき液の供給を停止しても多孔体の細孔内のめっき液の表面力によりめっき液をめっき液室内に保つことができ、陽極電極板に形成されたブラックフィルムは被めっき基板の交換時にもめっき液で覆われ、空気中に露出することがなく、ブラックフィルムの状態を安定した状態に維持することができるから、高品質のめっきを安定的に行うことができるめっき装置となる。しかも、被めっき基板のめっきを施す面を上に向けて配置しているから、めっき面に気泡が付着することがなくなる。
【００１０】
また、請求項２に記載の発明は、請求項１に記載のめっき装置において、多孔体の細孔の内径は５ｍｍ以下で、その長さは該内径の３倍以上であることを特徴とする。
【００１１】
上記のように多孔体の細孔の内径はめっき液室へのめっき液の供給を止めた場合にも、めっき液の表面力によってめっき液室のめっき液が細孔から流出させないための条件であり、本願発明者等の実験によれば、細孔の長さは内径の３倍以上の長さであればめっき液を細孔内に保つことができることが判明した。そこでめっき液室へのめっき液供給を止めた場合のめっき液の表面力によりめっき液の保持を考慮し、細孔の内径を５ｍｍ以下とし、その長さを該内径の３倍以上（１５ｍｍ）とすることにより、めっき液室へのめっき液の供給を停止しても細管内のめっき液はその表面力により流出せず、めっき液室内にめっき液を保持することが可能であることが確認できた。
【００１２】
また、請求項３に記載の発明は、請求項２に記載のめっき装置において、多孔体の細孔の内面が疎水性を有することを特徴とする。
【００１３】
上記のように細孔の内面が疎水性を有することにより、めっき液室のめっき液が細孔の内面に沿って流下し難くなる。
【００１４】
また、請求項４に記載の発明は、請求項１乃至３のいずれか１つに記載のめっき装置において、めっき液室にめっき液を供給するめっき液供給路の該めっき液室直前に閉鎖弁を設けたことを特徴とする。
【００１５】
上記のようにめっき液供給路のめっき液室直前に閉鎖弁を設けることにより、該閉鎖弁を単独又は他の機構と連携させてめっき液室へのめっき液の供給を停止することにより、めっき液室の外部に開放された経路を多孔体の細孔のみとすることができ、めっき液室内にめっき液を容易に保持できる。
【００１６】
【発明の実施の形態】
以下、本発明の実施の形態例を図面に基づいて説明する。図２は本発明に係るめっき装置の構成例を示す図である。図２において、１０は絶縁性の樹脂材で構成されためっきヘッドであり、該めっきヘッド１０は内部にめっき液室１１が形成され、該めっき液室１１の下面に板体に多数の細孔を形成してなる多孔体１２が配置されている。めっきヘッド１０の上方から供給されためっき液は複数に分岐されためっき液供給路１３を通してめっき液室１１にその周囲から流入するようになっている。めっき液室１１内の上部には溶解性の陽極電極板１４が配設されている。
【００１７】
なお、多孔体１２は板体に多数の細孔を形成してなるものに限定されるものではなく、多数の細管を集合させて形成した多孔体であっても良く、ここではテフロン製の厚さ３０ｍｍの板体に内径３ｍｍの貫通孔を多数形成した多孔板を多孔体１２として用いている。
【００１８】
めっきヘッド１０の直下には後に詳述する構成のめっき保持具１５にめっき面を上向きにして保持された半導体ウエハ等の被めっき基板１６がめっき液室１１内に配設された陽極電極板１４に対向して配置されている。めっき液室１１に供給されためっき液Ｑ₁は多孔体１２の各細孔を通って被めっき基板１６のめっき面に流下する。陽極電極板１４と被めっき基板１６のめっき面にはめっき電源１７から配線１８、１８を通して所定の電圧が印加されるようになっている。陽極電極板１４及び多孔体１２の直径は被めっき基板１６のめっき面の直径と略同じ大きさとなっている。
【００１９】
被めっき基板１６は上記のようにめっき面を上に向けて基板保持具１５に保持され、図３に示すように、めっき面の周囲は基板保持具１５との間にシール部材１９により液密にシールされ、被めっき基板１６の表面のめっき液が触れない外周部にカソードピン２０が当接し、配線１８によりめっき電源１７の陰極側に接続されている。
【００２０】
基板保持具１５は回転軸２５で中心軸の回りをモータ２２により水平に回転すると共に、基板保持具上下駆動機構２１により上下に移動可能に配置されている。基板保持具１５は基板保持ケース２３を具備し、該基板保持ケース２３の内部には基板載置台２３ａが設けられ、側部には基板出し入れ開口２３ｂが設けられている。また、基板保持ケース２３内には基板押え板２４が配置され、該基板押え板２４にはその中心部に基板押え軸２６が設けられ、基板押え軸上下駆動機構２７により上下に移動できるようになっている。被めっき基板１６は該基板保持ケース２３に収容され、基板押え板２４でシール部材１９及びカソードピン２０に押え付けられ保持されるようになっている。
【００２１】
めっき液室１１から多孔体１２の多数の細孔を通って流下しためっき液Ｑ₁は、被めっき基板１６のめっき面上を流れて、めっきヘッド１０の多孔体１２下端と基板保持具１５上端との間からめっき液受皿２８内に流出する。該めっき液受皿２８に回収されためっき液はフィルター２９を通してめっき液貯留槽３０に送られる。該めっき液貯留槽３０内のめっき液Ｑ₁は、図示しない調整装置により、濃度、温度などが調整され、めっき液供給ポンプ３１によりフィルタ３２及びめっき液供給路１３を通してめっき液室１１に供給される。
【００２２】
上記構成のめっき装置において、めっき開始時には、基板保持具１５の基板押え板２４を基板押え軸上下駆動機構２７により下降させ（図３のＡ位置）、基板保持ケース２３の側部に設けた基板出し入れ開口２３ｂから被めっき基板１６をそのめっき面を上にしてロボットハンド（図示せず）により挿入し、基板載置台２３ａ上に載置する。次に基板押え板２４を基板押え軸上下駆動機構２７により上昇させ、被めっき基板１６をシール部材１９及びカソードピン２０に当接させて固定する。
【００２３】
次に、基板保持具１５を基板保持具上下駆動機構２１により上昇させ、その上端をめっきヘッド１０の多孔体１２の下に数ｍｍの間隔を空けて配置させる。この間隔はめっき液室１１に供給するめっき液が、多孔体１２下端と基板保持具１５上端との隙間を充たして流出する程度とする。この間隔が広すぎると、被めっき基板１６上のめっき液Ｑ₁は該被めっき基板１６の回転による遠心力で外周部に流れ去り、中央部はめっき液が少ない状態となるため、被めっき基板１６のめっき面に均一なめっき膜を形成することが難しくなる。
【００２４】
基板保持具１５の位置が定まったら、モータ２２により、基板保持具１５を回転して被めっき基板１６を回転させ、めっき液室１１にめっき液Ｑ₁を供給すると共に、めっき電源１７から陽極電極板１４とカソードピン２０の間に電流を流して電解めっきを開始する。
【００２５】
めっき処理が終了すると、めっき液室１１の直前に配置された閉鎖弁機構３３によりめっき液供給路１３を閉鎖すると同時に、めっき液供給ポンプ３１を停止する。これにより、めっき液室１１へのめっき液Ｑ₁の供給が停止するが、めっき液室１１のめっき液Ｑ₁は多孔体１２を通って空気と入れ替わることがないため、めっき液室１１に溜まったままで流下することはない。従って、陽極電極板１４はめっき液Ｑ₁の中に浸漬されたままで、空気中に露出されることはない。このため、陽極電極板１４の表面に形成されたブラックフィルムは安定した状態を保つことができる。
【００２６】
上記めっき液室１１へのめっき液Ｑ₁の供給を停止したら、基板保持具上下駆動機構２１により、基板保持具１５を降下させ、続いてモータ２２により被めっき基板１６を基板保持具１５と共に５００ｒｐｍ以上の速度で回転させ、該被めっき基板１６及び基板保持具１５に付着しているめっき液Ｑ₁の液切れを行う。液切れが終了すると、めっき液受皿２８の外周部を覆っているカバー３４を下げ、基板保持具１５の基板押え板２４を降下させ、被めっき基板１６を基板載置台２３ａに載置する。基板出し入れ開口２３ｂからロボットハンドにより、めっき処理済みの被めっき基板１６を取り出し、次にめっき処理すべき被めっき基板１６を基板載置台２３ａに載置する。
【００２７】
なお、上記めっき液の液切の後、めっき液受皿２８の外周部を覆っているカバー３４の上部に取り付けたノズル（図示せず）から純水等の洗浄水液を噴射し、被めっき基板１６及び基板保持具１５を洗浄し、再度液切れすることもできる。
【００２８】
また、上記実施の形態例ではめっき液Ｑ₁としては硫酸銅溶液を用い銅の電解めっきを行っているが、本発明は銅の電解めっきに限定されるものではなく、他の金属の電解めっきにも利用できる。
【００２９】
【発明の効果】
以上説明したように各請求項に記載の発明によれば下記のような優れた効果が得られる。
【００３０】
請求項１に記載の発明によれば、めっき室の下面に多数の細孔が形成された多孔体を設けることにより、めっき液室にめっき液の供給を停止しても多孔体の細孔内のめっき液の表面力によりめっき液をめっき液室内に保つことができ、陽極電極板に形成されたブラックフィルムは被めっき基板の交換時にもめっき液で覆われ、空気中に露出することがなく、安定した状態に維持できるから、高品質のめっきを安定的に行うことができる。しかも、被めっき基板のめっきを施す面を上に向けて配置しているから、めっき面に気泡が付着することがなくなる。
【００３１】
請求項２に記載の発明によれば、多孔体に形成された細孔の内径は５ｍｍ以下で、その長さは該内径の３倍以上とすることにより、めっき液室へのめっき液の供給を停止しても細孔内のめっき液はその表面力により流出しないから、めっき液室内にめっき液を保持することが可能になる。
【００３２】
また、請求項３に記載の発明によれば、細孔の内面が疎水性を有することにより、めっき液室のめっき液が内面に沿って流下し難くなる。
【００３３】
また、請求項４に記載の発明によれば、めっき液供給路のめっき液室直前に閉鎖弁を設けることにより、該閉鎖弁を単独又は他の機構と連携させてめっき液室へのめっき液の供給を停止することにより、めっき液室の外部に開放された経路を多孔体の細孔のみとすることができ、めっき液室内にめっき液を容易に保持することができる。
【図面の簡単な説明】
【図１】従来のフェースダウン方式の噴流めっき装置の構成を示す図である。
【図２】本発明に係るめっき装置の構成例を示す図である。
【図３】本発明に係るめっき装置の基板保持具の構成例を示す図である。
【符号の説明】
１０めっきヘッド
１１めっき液室
１２多孔体
１３めっき液供給路
１４陽極電極板
１５基板保持具
１６被めっき基板
１７めっき電源
１８配線
１９シール部材
２０カソードピン
２１基板保持具上下駆動機構
２２モータ
２３基板保持ケース
２４基板押え板
２５回転軸
２６基板押え軸
２７基板押え軸上下駆動機構
２８めっき液受け皿
２９フィルター
３０めっき液貯留槽
３１めっき液供給ポンプ
３２フィルター
３３閉鎖弁機構[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plating apparatus that performs plating on a substrate to be plated. In particular, the groove or hole of a substrate to be plated in which fine grooves or holes for wiring are formed on the surface of a semiconductor wafer or the like is plated with a metal such as copper. The present invention relates to a plating apparatus suitable for filling.
[0002]
[Prior art]
In recent years, a metal plating apparatus such as copper plating is used to fill the groove or hole of a substrate to be plated in which fine grooves or holes for wiring are formed on the surface of a semiconductor wafer or the like. A technique for filling holes and the like is employed. Conventionally, as this type of plating apparatus, there is a face-down type jet plating apparatus. FIG. 1 is a diagram showing the configuration of the face-down type jet plating apparatus.
[0003]
As shown in FIG. 1, the face-down type jet plating apparatus 100 includes a plating tank 101 and holds a substrate 102 to be plated such as a semiconductor wafer on the plating tank 101 with its plating surface facing downward. A substrate holder 103 is provided, and the plating solution Q ₁ in the plating solution storage tank 104 is ejected from the bottom of the plating tank 101 through the filter 106 and the plating solution supply pipe 107 by the pump 105, and the plating surface of the substrate 102 to be plated is obtained. A jet of plating solution is applied perpendicularly.
[0004]
The plating solution Q ₁ that has overflowed the plating tank 101 is collected by a plating solution receiver 108 disposed outside the plating tank 101 and returned to the plating solution storage tank 104. A plating current is applied between the anode electrode 110 and the plating surface of the substrate 102 by applying a predetermined voltage between the anode electrode 110 and the cathode electrode (plating surface of the substrate 102 to be plated) from the plating power source 109. Flows, and a plating film is formed on the plating surface of the substrate 102 to be plated.
[0005]
As a method for forming wirings and bumps on the surface of a substrate such as a semiconductor wafer, the jet plating method has an advantage that it is not necessary to cover the back surface of the substrate with a resist or the like in contrast to immersion plating in which the entire substrate is immersed in a plating solution. However, when copper electroplating is used for the multilayer wiring, copper is extremely diffusible inside the silicon substrate. Therefore, in copper plating, it is strictly prevented that the plating solution adheres to the back and side surfaces of the substrate. There is a need. For this reason, the substrate 102 to be plated is held on the substrate holder 103 and sealed by the sealing member so that the plating solution does not adhere to the back and side surfaces of the substrate, the plating surface of the substrate faces downward, and jet plating is performed on the plating surface. A method of contacting the liquid is also employed. However, the method of mounting the substrate to be plated 102 on the substrate holder configured as described above and performing plating with the plating surface facing down has a problem that bubbles are likely to adhere to the plating surface.
[0006]
On the other hand, in electrolytic plating using phosphorous copper as an anode electrode, a black film is formed on the surface of the anode electrode, and maintaining this black film in a certain state is important for maintaining plating quality. When plating with the substrate facing upward, the anode electrode located above the substrate is exposed to the air from the plating solution when the substrate is replaced, thereby changing the state of the black film formed on the surface of the anode electrode. It was difficult to keep it constant.
[0007]
[Problems to be solved by the invention]
The present invention has been made in view of the above-described points, and solves the above-described problems, and bubbles are not attached to the plating surface of the substrate, and by stabilizing the black film formed on the surface of the anode electrode, high-quality plating is achieved. An object of the present invention is to provide a plating apparatus that can stably perform the above.
[0008]
[Means for Solving the Problems]
In order to solve the above problems, the invention according to claim 1 is arranged such that a surface of the substrate to be plated is directed upward, a plating head is disposed above the substrate to be plated , and the plating head Is a porous body having a large number of pores opposed to the surface of the substrate to be plated, a plating solution chamber disposed above the porous body, and plating the substrate to be plated in the plating solution chamber and a positive electrode plate disposed opposite to the surface, is constructed as a plating solution supplied to the plating solution chamber is supplied with the surface to be plated of the object to be plated substrate through a number of pores of the porous material The porous body stops the supply of the plating solution into the plating solution chamber, and even if the substrate to be plated disposed under the porous body is removed, the plating solution in the plating solution chamber is generated by the surface force of the plating surface in the pores. the has a function of holding the said plating solution chamber And wherein the door.
[0009]
As described above, by providing a porous body having a plurality of pores on the lower surface of the plating chamber, even if the supply of the plating solution to the plating solution chamber is stopped, the surface force of the plating solution in the pores of the porous body The plating solution can be kept in the plating solution chamber, and the black film formed on the anode electrode plate is covered with the plating solution even when the substrate to be plated is replaced, so that it is not exposed to the air and the state of the black film is stable. Therefore, the plating apparatus can stably perform high-quality plating. In addition, since the surface to be plated of the substrate to be plated is disposed facing upward, bubbles do not adhere to the plated surface.
[0010]
The invention described in claim 2 is characterized in that, in the plating apparatus according to claim 1, the inner diameter of the pores of the porous body is 5 mm or less, and the length thereof is three times or more of the inner diameter. .
[0011]
As described above, the inner diameter of the pores of the porous body is such that the plating solution in the plating solution chamber does not flow out of the pores due to the surface force of the plating solution even when the supply of the plating solution to the plating solution chamber is stopped. In addition, according to experiments by the inventors of the present application, it has been found that the plating solution can be maintained in the pores if the length of the pores is at least three times the inner diameter. Therefore, considering the retention of the plating solution by the surface strength of the plating solution when supply of the plating solution to the plating solution chamber is stopped, the inner diameter of the pores is set to 5 mm or less, and the length is at least three times the inner diameter (15 mm). Therefore, even if the supply of the plating solution to the plating solution chamber is stopped, the plating solution in the narrow tube does not flow out due to the surface force, and it is confirmed that the plating solution can be held in the plating solution chamber. did it.
[0012]
The invention described in claim 3 is the plating apparatus according to claim 2, wherein the inner surface of the pores of the porous body has hydrophobicity.
[0013]
As described above, since the inner surface of the pore has hydrophobicity, it is difficult for the plating solution in the plating solution chamber to flow down along the inner surface of the pore.
[0014]
According to a fourth aspect of the present invention, there is provided the plating apparatus according to any one of the first to third aspects, wherein the closing valve is provided immediately before the plating solution chamber in the plating solution supply path for supplying the plating solution to the plating solution chamber. Is provided.
[0015]
By providing a closing valve just before the plating solution chamber of the plating solution supply path as described above, the supply of the plating solution to the plating solution chamber is stopped by singly or in cooperation with another mechanism, thereby plating. The path opened to the outside of the liquid chamber can be only the pores of the porous body, and the plating solution can be easily held in the plating solution chamber.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings. FIG. 2 is a diagram showing a configuration example of a plating apparatus according to the present invention. In FIG. 2, reference numeral 10 denotes a plating head made of an insulating resin material. The plating head 10 has a plating solution chamber 11 formed therein, and a large number of pores are formed in the plate body on the lower surface of the plating solution chamber 11. The porous body 12 formed by forming is disposed. The plating solution supplied from above the plating head 10 flows into the plating solution chamber 11 from the periphery thereof through a plating solution supply path 13 branched into a plurality of portions. A soluble anode electrode plate 14 is disposed in the upper part of the plating solution chamber 11.
[0017]
The porous body 12 is not limited to a plate formed by forming a large number of pores, and may be a porous body formed by collecting a large number of thin tubes. Here, a thickness made of Teflon is used. A porous plate in which a large number of through-holes having an inner diameter of 3 mm are formed on a 30 mm thick plate is used as the porous body 12.
[0018]
Immediately below the plating head 10, an anode electrode plate 14 in which a substrate to be plated 16 such as a semiconductor wafer held by a plating holder 15 having a configuration described in detail later is disposed in the plating solution chamber 11. It is arranged to face. The plating solution Q ₁ supplied to the plating solution chamber 11 flows down through the pores of the porous body 12 to the plating surface of the substrate 16 to be plated. A predetermined voltage is applied to the plating surface of the anode electrode plate 14 and the substrate 16 to be plated from the plating power source 17 through the wirings 18 and 18. The diameters of the anode electrode plate 14 and the porous body 12 are substantially the same as the diameter of the plating surface of the substrate 16 to be plated.
[0019]
The substrate 16 to be plated is held by the substrate holder 15 with the plating surface facing upward as described above, and the periphery of the plating surface is liquid-tight by the seal member 19 between the substrate holder 15 and the substrate surface 15 as shown in FIG. The cathode pin 20 is in contact with the outer peripheral portion where the plating solution on the surface of the substrate 16 is not touched, and is connected to the cathode side of the plating power source 17 by the wiring 18.
[0020]
The substrate holder 15 is disposed so as to be horizontally moved by a motor 22 around a central axis by a rotary shaft 25 and to be moved up and down by a substrate holder vertical drive mechanism 21. The substrate holder 15 includes a substrate holding case 23, a substrate mounting table 23 a is provided inside the substrate holding case 23, and a substrate loading / unloading opening 23 b is provided on the side portion. A substrate holding plate 24 is disposed in the substrate holding case 23, and a substrate pressing shaft 26 is provided at the center of the substrate pressing plate 24 so that it can be moved up and down by a substrate pressing shaft vertical drive mechanism 27. It has become. The substrate 16 to be plated is accommodated in the substrate holding case 23 and is held and held on the seal member 19 and the cathode pin 20 by the substrate holding plate 24.
[0021]
The plating solution Q ₁ flowing down from the plating solution chamber 11 through the many pores of the porous body 12 flows on the plating surface of the substrate 16 to be plated, and the lower end of the porous body 12 of the plating head 10 and the upper end of the substrate holder 15. Flows out into the plating solution receiving tray 28. The plating solution collected in the plating solution receiving tray 28 is sent to the plating solution storage tank 30 through the filter 29. The plating solution Q ₁ in the plating solution storage tank 30 is adjusted in concentration, temperature, and the like by an adjusting device (not shown), and is supplied to the plating solution chamber 11 through the filter 32 and the plating solution supply path 13 by the plating solution supply pump 31. The
[0022]
In the plating apparatus configured as described above, at the start of plating, the substrate pressing plate 24 of the substrate holder 15 is lowered by the substrate pressing shaft vertical drive mechanism 27 (position A in FIG. 3), and the substrate provided on the side of the substrate holding case 23 The substrate 16 to be plated is inserted by the robot hand (not shown) with the plating surface facing up from the loading / unloading opening 23b and placed on the substrate placing table 23a. Next, the substrate pressing plate 24 is raised by the substrate pressing shaft vertical drive mechanism 27, and the substrate 16 to be plated is brought into contact with the seal member 19 and the cathode pin 20 and fixed.
[0023]
Next, the substrate holder 15 is raised by the substrate holder vertical drive mechanism 21, and the upper end thereof is disposed below the porous body 12 of the plating head 10 with an interval of several mm. This interval is set such that the plating solution supplied to the plating solution chamber 11 flows out while filling the gap between the lower end of the porous body 12 and the upper end of the substrate holder 15. If the spacing is too wide, the plating solution to Q ₁ on the plated substrate 16 flows away to the outer peripheral portion by the centrifugal force due to the rotation of該被plating substrate 16, since the central portion becomes the plating solution is small state, to be plated substrate It becomes difficult to form a uniform plating film on the 16 plating surfaces.
[0024]
When the position of the substrate holder 15 is determined, the substrate holder 15 is rotated by the motor 22 to rotate the substrate 16 to be plated, and the plating solution Q ₁ is supplied to the plating solution chamber 11. Electroplating is started by passing a current between the plate 14 and the cathode pin 20.
[0025]
When the plating process is completed, the plating solution supply path 13 is closed by the closing valve mechanism 33 disposed immediately before the plating solution chamber 11, and at the same time, the plating solution supply pump 31 is stopped. As a result, the supply of the plating solution Q ₁ to the plating solution chamber 11 is stopped, but the plating solution Q ₁ in the plating solution chamber 11 does not exchange with the air through the porous body 12, so that it accumulates in the plating solution chamber 11. It never flows down. Therefore, the anode electrode plate 14 remains immersed in the plating solution Q ₁ and is not exposed to the air. For this reason, the black film formed on the surface of the anode electrode plate 14 can maintain a stable state.
[0026]
When the supply of the plating solution Q ₁ to the plating solution chamber 11 is stopped, the substrate holder 15 is lowered by the substrate holder vertical drive mechanism 21, and subsequently the substrate 16 to be plated together with the substrate holder 15 is rotated at 500 rpm by the motor 22. By rotating at the above speed, the plating solution Q ₁ adhering to the substrate 16 and the substrate holder 15 is removed. When the drainage is completed, the cover 34 covering the outer periphery of the plating solution tray 28 is lowered, the substrate pressing plate 24 of the substrate holder 15 is lowered, and the substrate 16 to be plated is mounted on the substrate mounting table 23a. The plated substrate 16 to be plated is taken out from the substrate loading / unloading opening 23b by the robot hand, and the substrate 16 to be plated next is placed on the substrate mounting table 23a.
[0027]
After the plating solution is drained, cleaning water such as pure water is sprayed from a nozzle (not shown) attached to the top of the cover 34 that covers the outer periphery of the plating solution tray 28 to be plated. 16 and the substrate holder 15 can be washed and drained again.
[0028]
Further, in the above embodiment, copper plating is performed using a copper sulfate solution as the plating solution Q ₁ , but the present invention is not limited to copper electrolytic plating, and electrolytic plating of other metals. Can also be used.
[0029]
【The invention's effect】
As described above, according to the invention described in each claim, the following excellent effects can be obtained.
[0030]
According to the first aspect of the present invention, by providing a porous body in which a large number of pores are formed on the lower surface of the plating chamber, even if supply of the plating solution to the plating solution chamber is stopped, The plating solution can be kept in the plating solution chamber by the surface force of the plating solution, and the black film formed on the anode electrode plate is covered with the plating solution even when the substrate to be plated is replaced, and is not exposed to the air. Since a stable state can be maintained, high-quality plating can be stably performed. In addition, since the surface to be plated of the substrate to be plated is disposed facing upward, bubbles do not adhere to the plated surface.
[0031]
According to the invention described in claim 2, by supplying the plating solution to the plating solution chamber, the inner diameter of the pores formed in the porous body is 5 mm or less and the length thereof is three times or more of the inner diameter. Even if the process is stopped, the plating solution in the pores does not flow out due to the surface force, so that the plating solution can be held in the plating solution chamber.
[0032]
According to the invention described in claim 3, since the inner surface of the pore has hydrophobicity, the plating solution in the plating solution chamber hardly flows down along the inner surface.
[0033]
According to the invention described in claim 4, by providing a closing valve immediately before the plating solution chamber of the plating solution supply path, the plating solution into the plating solution chamber alone or in cooperation with another mechanism. By stopping the supply, the path opened to the outside of the plating solution chamber can be limited to only the pores of the porous body, and the plating solution can be easily held in the plating solution chamber.
[Brief description of the drawings]
FIG. 1 is a diagram showing a configuration of a conventional face-down type jet plating apparatus.
FIG. 2 is a diagram showing a configuration example of a plating apparatus according to the present invention.
FIG. 3 is a view showing a configuration example of a substrate holder of the plating apparatus according to the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Plating head 11 Plating solution chamber 12 Porous body 13 Plating solution supply path 14 Anode electrode plate 15 Substrate holder 16 Substrate to be plated 17 Plating power source 18 Wiring 19 Seal member 20 Cathode pin 21 Substrate holder vertical drive mechanism 22 Motor 23 Substrate holding Case 24 Substrate retainer plate 25 Rotating shaft 26 Substrate retainer shaft 27 Substrate retainer shaft vertical drive mechanism 28 Plating solution receptacle 29 Filter 30 Plating solution reservoir 31 Plating solution supply pump 32 Filter 33 Closing valve mechanism

Claims

A surface to be plated of the substrate to be plated is disposed facing upward, a plating head is disposed above the substrate to be plated, and the plating head has a large number of surfaces facing the surface to be plated of the substrate to be plated. a porous body the pores are formed, the plating solution chamber disposed above the porous body, and an anode electrode plate arranged to face the surface to be plated of the object to be plated substrate in the plating solution chamber includes being configured to plating solution supplied to the plating solution chamber is supplied to the plating is subjected surface of the object to be plated substrate through large number of pores of the porous body,
The porous body stops the supply of the plating solution into the plating solution chamber, and even if the substrate to be plated disposed under the porous body is removed, the surface force of the plating surface in the pores causes the inside of the plating solution chamber. A plating apparatus having a function of holding a plating solution in the plating solution chamber .

The plating apparatus according to claim 1,
An inner diameter of a pore of the porous body is 5 mm or less, and a length thereof is three times or more of the inner diameter.

The plating apparatus according to claim 2,
The plating apparatus characterized in that the inner surface of the pores of the porous body has hydrophobicity.

In the plating apparatus as described in any one of Claims 1 thru | or 3,
A plating apparatus, wherein a closing valve is provided immediately before the plating solution chamber in a plating solution supply path for supplying the plating solution to the plating solution chamber.