US20060124468A1 - Contact plating apparatus - Google Patents

Contact plating apparatus Download PDF

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Publication number
US20060124468A1
US20060124468A1 US11345011 US34501106A US2006124468A1 US 20060124468 A1 US20060124468 A1 US 20060124468A1 US 11345011 US11345011 US 11345011 US 34501106 A US34501106 A US 34501106A US 2006124468 A1 US2006124468 A1 US 2006124468A1
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Prior art keywords
plating
membrane
substrate
surface
generally
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Abandoned
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US11345011
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Nicolay Kovarsky
Michael Yang
Dmitry Lubomirsky
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Applied Materials Inc
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Applied Materials Inc
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for plating wafers, e.g. semiconductors, solar cells

Abstract

Embodiments of the invention generally provide a substrate processing system and method. The substrate processing system generally includes a fluid basin configured to contain a plating solution therein, an anode assembly positioned in a lower portion of the fluid basin, a separation membrane positioned across the fluid basin above the anode assembly, a diffusion member positioned across the fluid basin above the separation membrane, and a plating membrane positioned across the fluid basin above the diffusion member. The plating method generally includes immersing the substrate in a plating solution, the plating solution containing metal ions to be plated, contacting a plating surface of the semiconductor substrate with a plating membrane, applying a plating bias to the semiconductor substrate to plate the metal ions in the plating solution positioned adjacent the plating surface of the substrate, removing the plating surface from contact with the plating membrane for a predetermined period of time, and recontacting the plating surface with the plating membrane to continue plating the metal ions onto the plating surface.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • [0001]
    This application is a divisional application of co-pending U.S. patent application Ser. No. 10/360,234, filed Feb. 6, 2003, which is incorporated herein by reference in its entirety.
  • BACKGROUND OF THE INVENTION
  • [0002]
    1. Field of the Invention
  • [0003]
    Embodiments of the invention generally relate to semiconductor processing system, and more particularly, embodiments of the invention relate to a contact electrochemical plating apparatus and method.
  • [0004]
    2. Description of the Related Art
  • [0005]
    Metallization of sub-quarter micron sized features is a foundational technology for present and future generations of integrated circuit manufacturing processes. More particularly, in devices such as ultra large scale integration-type devices, i.e., devices having integrated circuits with more than a million logic gates, the multilevel interconnects that lie at the heart of these devices are generally formed by filling high aspect ratio, i.e., greater than about 4:1, interconnect features with a conductive material, such as copper or aluminum. Conventionally, deposition techniques such as chemical vapor deposition (CVD) and physical vapor deposition (PVD) have been used to fill these interconnect features. However, as the interconnect sizes decrease and aspect ratios increase, void-free interconnect feature fill via conventional metallization techniques becomes increasingly difficult. Therefore, plating techniques, i.e., electrochemical plating (ECP) and electroless plating, have emerged as promising processes for void free filling of sub-quarter micron sized high aspect ratio interconnect features in integrated circuit manufacturing processes.
  • [0006]
    In an ECP process, for example, sub-quarter micron sized high aspect ratio features formed into the surface of a substrate (or a layer deposited thereon) may be efficiently filled with a conductive material, such as copper. ECP plating processes are generally multistage processes, wherein a substrate is prepared for plating, i.e., one or more preplating processes, brought to a plating cell for a plating process, and then the substrate is generally post treated after the plating process. The preplating process generally includes processes such as depositing a barrier/diffusion layer and/or a seed layer on the substrate, precleaning the seed layer and/or substrate surface prior to commencing plating operations, and other preplating operations that are generally known in the art. Once the preplating processes are complete, the substrate is generally transferred to a plating cell where the substrate is contacted with a plating solution and the desired plating layer is deposited on the substrate. Once the plating processes are complete, then the substrate is generally transferred to a post treatment cell, such as a rinse cell, bevel clean cell, drying cell, or other post treatment process cell generally used in the semiconductor art.
  • [0007]
    However, one challenge associated with conventional plating systems is that it is difficult to provide a uniform plating thickness above both narrow and wide features. For example, conventional plating systems are prone to a characteristic generally termed mounding, which is when the material plated over a substrate having both narrow and wide features accumulates faster or has a greater thickness over the narrow features as compared to the wider features. The result of this characteristic is a buildup or mound of the plated material above the narrow features, which is undesirable for subsequent processing steps, such as chemical mechanical polishing, edge bead removal, electrochemical polishing, and other post plating processes. In response to this challenge, contact-type plating systems have been developed. Contact-type plating systems generally include a pad or membrane in an upper portion of the plating cell, wherein the pad or membrane is configured to contact the plating surface during plating operations. This contact generally operates to minimize mounding characteristics. However, one disadvantage of contact-type plating apparatuses is that it is difficult to obtain sufficient fresh electrolyte flow to the substrate surface as a result of the fluid restriction characteristics generated by the membrane. More particularly, contact-type plating systems generally fail to provide a sufficient flow of fresh electrolyte to the center of the substrate, and as a result thereof, the center of the substrates are generally burned by the plating process.
  • [0008]
    Therefore, there is a need for a plating apparatus and method, wherein the apparatus and method are configured to supply sufficient fresh electrolyte to the substrate surface during plating operations to prevent burning characteristics.
  • SUMMARY OF THE INVENTION
  • [0009]
    Embodiments of the invention may generally provide an apparatus and method for electrochemically plating a layer onto a semiconductor substrate. The apparatus generally includes a plating cell configured to conduct an electrochemical plating process, however, the plating cell is configured to contact the plating surface of the substrate with a plating membrane. The plating membrane generally includes channels formed therethrough in a configuration such that a supply of fresh electrolyte may be communicated to the plating surface of the substrate, while alternative channels formed through the membrane may be used to remove used or depleted electrolyte from the surface of the substrate. The method for electrochemically plating a layer onto a substrate may generally include contacting the plating surface of the substrate with the membrane. A plating solution may be supplied to the plating surface via supply channels formed into the membrane, and used electrolyte may be communicated away from the plating surface by recirculation channels formed through the membrane. Additionally, inasmuch as the physical contact between the membrane and the substrate may inhibit electrolyte from freely flowing from the membrane supply channels, the membrane may be periodically removed from contact with the substrate for a short duration of time in order to allow fresh electrolyte to be supplied to the plating surface.
  • [0010]
    Embodiments of the invention may further provide a substrate processing system that generally includes a fluid basin configured to contain a plating solution therein, an anode assembly positioned in a lower portion of the fluid basin, and a separation membrane positioned across the fluid basin above the anode assembly. The processing system may further include a diffusion member positioned across the fluid basin above the separation membrane, and a plating membrane positioned across the fluid basin above the diffusion member.
  • [0011]
    Embodiments of the invention may further provide an electrochemical processing system. The processing system generally includes a cell configured to contain an electrolyte solution, an anode positioned in the electrolyte solution, a separation membrane sealably positioned to an inner wall of the cell above the anode, and a diffusion member sealably positioned to the inner wall of the cell above the separation membrane. The cell further includes a plating membrane sealably positioned to the inner wall of the cell above the separation membrane, the plating membrane having a top and bottom surfaces, the bottom surface being positioned adjacent the diffusion member and the top surface being positioned adjacent a plating surface of a substrate, a plurality of fluid supply channels fluidly connecting the first and second surfaces, and a plurality of fluid recirculation channels in fluid communication with the top surface and a drain channel.
  • [0012]
    Embodiments of the invention may further provide a method for plating a metal onto a semiconductor substrate. The plating method generally includes immersing the substrate in a plating solution, the plating solution containing metal ions to be plated, contacting a plating surface of the semiconductor substrate with a plating membrane, applying a plating bias to the semiconductor substrate to plate the metal ions in the plating solution positioned adjacent the plating surface of the substrate, removing the plating surface from contact with the plating membrane for a predetermined period of time, and recontacting the plating surface with the plating membrane to continue plating the metal ions onto the plating surface.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • [0013]
    So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
  • [0014]
    FIG. 1 illustrates a sectional view of an exemplary plating cell and head assembly of the invention.
  • [0015]
    FIG. 2A illustrates a plan view of an exemplary plating membrane of the invention.
  • [0016]
    FIG. 2B illustrates a first sectional view of an embodiment of a plating membrane of the invention.
  • [0017]
    FIG. 2C illustrates a second sectional view of an embodiment of a plating membrane 110 of the invention
  • [0018]
    FIG. 3 illustrates a cross sectional view of an exemplary plating membrane of the invention, wherein a fluid supply channel is connected to a fluid drain channel of the membrane via a recess in the membrane.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
  • [0019]
    FIG. 1 illustrates a perspective and partial sectional view of an exemplary contact-type electrochemical plating cell 100 and head assembly 150 of the invention. Head assembly 150 generally includes a support frame 151 configured to support a substrate contact assembly 154. The substrate contact assembly 154 generally includes a vertically actuated thrust plate 152 and a substrate contact ring 153. A substrate 155 to be processed is generally placed on contact ring 153, which provides an electrical plating bias to substrate 155 via contact pins 156. Once the substrate is placed on the contact ring 153, the thrust plate 152 may be lowered, i.e., in the direction indicated by arrow A, to engage the backside of the substrate and secure the substrate in the contact ring 153 for plating operations. Further, head assembly 150 may also be rotated, as illustrated by arrow B, to facilitate plating, rinsing, or drying processes. In another embodiment of the invention the head assembly utilizes a vacuum chuck-type of substrate securing method. For example, in this embodiment a conductive seed layer formed on the substrate may be extended around the bevel edge of the substrate at least partially onto the backside of the substrate. Then, a vacuum chuck-type substrate support may be used to secure the substrate thereto for processing with the production surface of the substrate facing away from the vacuum chuck. Further, the substrate engaging surface of the vacuum chuck may include a plurality of electrical contact pins configured to electrically engage the substrate, and more particularly, the contact pins are generally configured to engage the substrate in the area where the seed layer is extended onto the backside of the substrate. In this embodiment there will not be any frontside or production surface contact with the substrate, which minimizes interference with the plating membrane.
  • [0020]
    Plating cell 100 generally includes an outer basin 101 and an inner basin 102 positioned within outer basin 101. Inner basin 102 is generally configured to contain a plating solution that is used to plate a metal, e.g., copper, onto a substrate during an electrochemical plating process. During the plating process, the plating solution is generally continuously supplied to inner basin 102 (at about 1-5 gallons per minute for a 10 liter plating cell, for example), and therefore, the plating solution may overflow the uppermost point of inner basin 102 and run into outer fluid recovery basin 101 where it may be collected and recycled for subsequent use. Although not illustrated in FIG. 1, plating cell 100 may be positioned at a tilt angle, i.e., the frame portion 103 of plating cell 100 may be elevated on one side such that the components of plating cell 100 are tilted between about 3° and about 30° from horizontal. Therefore, in order to contain an adequate depth of plating solution within inner basin 102 during plating operations, the uppermost portion of basin 102 may be extended upward on one side of plating cell 100, such that the uppermost point of inner basin 102 is generally horizontal and allows for contiguous overflow of the plating solution supplied thereto around the perimeter of basin 102.
  • [0021]
    The lower portion of plating cell 100 generally includes an annular anode base member 104 that is also positioned at the aforementioned tilt angle, i.e., the upper surface of the base member is generally tilted from horizontal. Base member 104 generally includes an annular or disk shaped recess formed into a central portion thereof, wherein the annular recess is configured to receive a disk shaped or annular anode member 105. Base member 104 may further include a plurality of fluid inlets/drains 109 positioned on a lower surface thereof. Each of the fluid inlets/drains 109 are generally configured to individually supply or drain a fluid to or from either the anode compartment or the cathode compartment of plating cell 100. Anode member 105 generally includes a plurality of slots 107 formed therethrough, wherein the slots 107 are generally positioned in parallel orientation with each other across the surface of the anode 105. The parallel orientation allows for dense fluids generated at the anode surface to flow downwardly across the anode surface and into one of the slots 107. Plating cell 100 further includes a membrane support assembly configured to receive a membrane 108 thereover, i.e., the membrane may be stretched over the membrane support and use the membrane support as structural support thereof. The membrane support assembly 106 may include an o-ring type seal positioned near a perimeter of the membrane, wherein the seal is configured to prevent fluids from traveling from one side of the membrane secured on the membrane support 106 to the other side of the membrane. The membrane secured to the membrane support may be an ionic membrane, a fluid permeable membrane, or other type of membrane capable of being used in an electrochemical plating cell. Plating cell 100 further includes a diffusion member 112 positioned across an upper portion of cell 100 above membrane 108. Diffusion member is generally a porous disk shaped member that is sealably attached to the inner wall of basin 102 such that fluid traveling upward through cell 100 must pass through diffusion member in order to reach a substrate being plated in cell 100. Although embodiments of the invention are not limited to any particular construction of diffusion member 112, porous ceramic materials may be used to manufacture diffusion member 112, as these members provide a generally uniform fluid flow therethrough and offer ample flux control characteristics. Further, diffusion member 112 is generally sealably attached to the inner wall of the inner basin 102, and therefore, fluid traveling upward must generally travel through diffusion member 112. Diffusion member 112 generally includes a substantially planar upper surface, which is generally configured to receive a plating membrane (further discussed herein) thereon during plating operations. Further still, the outer perimeter of diffusion member 112 may include an annular channel formed therein, wherein the annular channel is sized to receive a bottom portion of a contact ring therein. This allows for a substrate being plated in cell 100 to be positioned in abutment with a plating membrane resting on the upper surface of the diffusion member 112, as the portions of the contact ring that extend below the substrate may be received in the annular channel formed into the diffusion member 112.
  • [0022]
    During plating operations, a plating solution is generally supplied to the volume in the plating cell 100 above membrane 108, while a separate fluid solution is generally supplied to the volume within plating cell below membrane 108. More particularly, generally an anolyte solution, i.e., a plating solution that does not contain plating additives (levelers, suppressors, accelerators, etc), is supplied to the anode chamber, wherein the anode chamber is generally defined as the volume of the plating cell 100 below membrane 108. A catholyte solution, i.e., a plating solution having a chosen concentration of plating additives therein (levelers, suppressors, accelerators, etc) is supplied to the catholyte chamber, wherein the catholyte chamber is generally defined as the volume of the plating cell above membrane 108.
  • [0023]
    In addition to membrane 108 used in the plating cell to separate the anode compartment from the cathode compartment, a secondary plating membrane or plating pad 110 may be positioned across a top portion of the plating cell 100. Plating membrane 110, which is generally referred to in the semiconductor plating art as a plating pad or plating membrane, is generally positioned to be in contact with or submerged in the electrolyte solution contained within inner basin 102. In similar fashion to the membrane positioned on the membrane support 106, plating membrane 110 may also be sealed to the outer perimeter of inner basin 102. In this configuration the plating solution applied to the inner basin would be required to flow through the plating membrane 110 before being collected in outer basin 101 for recycling. Further, plating membrane 110 is generally positioned such that when a substrate is brought into a processing position, i.e., when a substrate is lowered into the plating solution contained within inner basin 102 by a head assembly or other means of supporting a substrate for processing steps, plating membrane 110 is generally in contact with the plating surface of the substrate. Plating membrane 110 is generally fluid permeable, and therefore, the plating solution contained within inner basin 102 generally passes through the plating membrane 110 to contact the plating surface of the substrate.
  • [0024]
    FIG. 2A illustrates a plan view of the topside of the plating membrane 110. The upper surface or topside of membrane generally includes a plurality of apertures 201 formed therein. Each of apertures 201 are in fluid communication with channels 202 or 203 formed through the interior of plating membrane 110. More particularly, as illustrated in FIGS. 2B and 2C, approximately half of apertures 201 are in fluid communication with fluid supply channels 202, while the other half of apertures are in fluid communication with fluid recirculation channels 203.
  • [0025]
    FIG. 2B illustrates a first sectional view of an embodiment of a plating membrane 110 of the invention. More particularly, the section of the plating membrane 110 illustrated in FIG. 2B is selected to illustrate the fluid recirculation channels 203 formed through the plating membrane 110 that are configured to remove plating solution from the substrate surface for recycling. Each of the fluid recirculation channels 203 generally runs vertically through the plating membrane 110 and terminates at a drain channel 204 that runs across the plating membrane 110 generally directly below the fluid recirculation channels 203. As such, fluid received in apertures 201 that are in fluid communication with recirculation channels 203 is generally communication to drain channel 204 by the fluid recirculation channels 203. Drain channel 204 generally operates to communicate the fluid to the perimeter of the plating membrane 110, where the fluid may then be captured or otherwise allowed to flow into the outer basin 101 for collection and recirculation to the plating cell.
  • [0026]
    FIG. 2C illustrates a second sectional view of an embodiment of a plating membrane of the invention. More particularly, the section of the plating membrane 110 illustrated in FIG. 2C is selected to illustrate the fluid channels 202 formed through the plating membrane 110 that are configured to supply fresh electrolyte to the plating surface of the substrate. Fluid supply channels 202 are generally configured to fluidly connect the lower side of the plating membrane 110 to the upper side of the plating membrane, and as such, the plating solution supplied to the volume in the plating cell below the plating membrane 110 may generally flow the plating membrane 110 from the bottom side to the top side where a substrate is generally positioned during plating operations. The process of flowing fluid through the plating membrane 110 is generally driven by the fluid pressure generated via the supply of plating solution (catholyte) to the volume within inner basin 102 above membrane 108, as the outer perimeter of plating membrane 110 is generally sealed to the wall of inner basin 102 and does not allow plating solution to pass from the bottom side of the plating membrane 110 to the top side of the plating membrane without passing through the membrane 110. As such, the plating solution supplied to the catholyte compartment generally flows into the compartment and through the plating membrane 110 before being captured for recycle.
  • [0027]
    FIG. 3 illustrates a cross sectional view of an alternative embodiment of the invention, wherein fluid supply channels of a plating membrane 300 are connected to fluid drain channels by a recess in the surface of the plating membrane that is proximate the substrate being plated. The exemplary plating membrane 300 generally includes at least one fluid supply channel 301 that originates on a first or backside 304 of membrane 300 and terminates proximate a second or frontside 305 of membrane 300, wherein the backside 304 generally faces the anode of a plating cell and the frontside 305 is generally in contact with the substrate being plated. The exemplary plating membrane 300 also generally includes at least one fluid recirculation channel 302 that originates on the frontside 305 of membrane 300 (in recession 303) and terminates proximate backside 304. The frontside 305 generally includes a recession 303 formed therein, wherein the recession 303 interconnects at least one of the fluid supply channels 301 to at least one of the fluid recirculation channels 302. The shape of recession 303 in a plan view may be square, rectangular, triangular, oval, circular, or any other shape that allows for fluid connection of at least one fluid supply channel 301 to at least one fluid recirculation channel. For example, recession may be square shaped in a plan view with a side distance of between about 5 microns and about 100 microns. Similarly, the diameter or cross sectional distance across the respective fluid channels may be between about 1 micron and about 10 microns, for example. Therefore, in this embodiment, the upper surface 305 is brought into contact with a plating surface of a substrate that is within a plating solution. The plating solution is flowed to the plating surface via fluid supply lines 301. The plating solution enters into recession 303 and is allowed to contact and electrochemically react with the plating surface of the substrate. Simultaneously, plating solution is being removed from the recession via fluid recirculation channels 302, which allows fresh plating solution to be continually supplied to the plating surface of the substrate.
  • [0028]
    In operation, generally a substrate is first brought into a plating position within plating cell 100. More particularly, a head assembly (not shown) generally lowers a substrate from above cell 100 into a plating position, which generally corresponds to position where the plating surface of the substrate is in contact with the plating membrane 110. Once the substrate is positioned in the plating position, the substrate may be rotated while an electrical plating bias is simultaneously applied between the substrate being plated and the anode 105 within plating cell 100. Further, in conjunction with the rotation and application of the electrical plating bias, anolyte and catholyte solutions are generally circulated to the respective chambers within plating cell 100. The application of the plating bias between the substrate and anode 105 generally operates to urge metal ions in the plating solution to plate onto the substrate surface, assuming that the substrate surface is in electrical communication with the cathode terminal of the power supply so that the positive ions in the plating solution are attractive thereto.
  • [0029]
    More particularly, once a substrate is positioned in a plating position, a plating solution or catholyte solution is generally supplied to the catholyte chamber of cell 100, wherein the catholyte chamber generally corresponds to the volume of cell 100 above membrane 108. Since plating membrane 110 is generally sealably attached to the inner wall of inner basin 102, the plating solution supplied to the catholyte chamber generally causes a slight increase in fluid pressure within the catholyte chamber. This slight increase in fluid pressure is generally sufficient to drive or urge the plating solution within the catholyte chamber through the plating membrane 110. As such, the fluid pressure in catholyte chamber essentially operates to urge the plating solution to pass through plating membrane 110 so that it may contact the plating surface of the substrate being plated and supply plating ions thereto.
  • [0030]
    The process of flowing the plating solution from the catholyte chamber to the substrate surface being plated generally includes providing sufficient fluid pressure to the catholyte chamber to urge or force the plating solution within the catholyte chamber through plating membrane 110. More particularly, as illustrated FIG. 2C, plating membrane 110 generally includes a plurality of fluid supply channels 202 formed therethrough that operate to provide a fluid pass from the catholyte chamber to the surface of the substrate being plated, assuming the substrate being plated is in physical contact with the upper surface of plating membrane 110. Thus, one fluid pressure is supplied to the light chamber, the plating solution within the catholyte chamber is caused to travel through fluid supply apertures 202 to the surface of the substrate being plated.
  • [0031]
    Once the plating solution is supplied to the substrate surface for plating operations, portions of the solution are generally consumed by the plating operation. As such, it is generally necessary to continually supply plating solution to the substrate plating surface in order to maintain plating process. However, the volume between the plating surface and the plating membrane 110 is relatively constant or fixed, and therefore, in order to provide well plating solution to the plating surface of the substrate, the depleted or used plating solution is generally removed therefrom. For example, FIG. 2B illustrates in the fluid recirculation channels 203, which are in fluid communication with a fluid drain channel 204. Fluid drain channel 204 is generally in fluid communication with outer basin 101, and therefore, the used or depleted plating solution that is removed from the plating surface of the substrate via drain channel 204 is supplied to outer basin 101, which operates to collect the used electrolyte and recirculated back into the plating system as required. Therefore, the combination of fluid supply channels 202 and fluid drain channels 203 operate to continually supply fresh electrolyte to the plating surface of the substrate.
  • [0032]
    Further, as illustrated in FIG. 3, a plating membrane 300 may be modified to interconnect fluid supply channels 301 with fluid drain channels 302 via a recession 303 formed into an upper surface 305 of the plating membrane 300. In this configuration, the recession 303 generally operates to maintain a small volume or pocket of electrolyte in the local area between the respective inlet 301 and outlet 302. As such, the formation of the recession 303 into the upper surface 305 of the plating membrane 300 operates to provide a larger volume of plating solution to the plating surface of the substrate, without separating or increasing the distance between the surface of the substrate and the plating membrane 110. This additional volume of plating solution maintained within recession 303 helps prevent the electrical plating bias from burning the plating membrane.
  • [0033]
    In another embodiment of the invention, the plating process may be modified to prevent burning the plating membrane. For example, burning generally occurs when the plating solution between the plating surface and the plating membrane depletes or is not recirculated quickly enough. Since the plating membrane is generally in contact with the plating surface, conventional contact plating apparatuses have difficulty supplying fresh plating solution to the substrate surface, as the contact between the plating membrane and the substrate surface generates resistance to fluid supply. Therefore, embodiments of the invention contemplate a pulsed plating method that may be used to prevent burning of the plating membrane. More particularly, the pulse plating method generally includes contacting the substrate with the plating membrane for a first period of time, wherein the first period of time generally corresponds to the amount of time it takes to deplete a calculated volume of plating solution from between the plating membrane and the plating surface. Once the first period of time has expired, the plating membrane is removed from direct contact with the plating surface for a second period of time, wherein the second period of time is calculated to allow a sufficient amount of fresh plating solution to be circulated through the plating membrane to supplant plating operations for another period of time equal to the first period of time. In other words, the first period of time is generally the amount of time it takes to deplete the plating solution that may be supplied to the plating membrane and the plating surface, while the second period of time corresponds to the amount of time it takes to circulate to fresh plating solution into the area between the plating surface and membrane. The duration of the pulse, i.e., the duration of the separation between the plating membrane and the plating surface, may be between about 0.01 seconds and about 1 second, for example. More particularly, the pulse duration may be between about 0.1 seconds and about 0.5 seconds. The pulse or separation of the plating membrane from the plating surface of the substrate operates to reduce the fluid flow resistance generated via the contact between the plating membrane and the plating surface so that positive fluid flow through the membrane may be obtained. The positive flow is generally calculated to replenish the electrolyte depleted at the surface of the substrate.
  • [0034]
    While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow

Claims (20)

  1. 1. A method for electrochemically plating a metal on a semiconductor substrate, comprising:
    immersing the substrate in a plating solution, the plating solution containing metal ions to be plated;
    contacting a plating surface of the semiconductor substrate with a plating membrane;
    applying a plating bias to the semiconductor substrate to plate the metal ions in the plating solution positioned adjacent the plating surface of the substrate;
    removing the plating surface from contact with the plating membrane for a predetermined period of time; and
    recontacting the plating surface with the plating membrane to continue plating the metal ions onto the plating surface.
  2. 2. The method of claim 1, further comprising rotating the substrate.
  3. 3. The method of claim 1, wherein removing the plating surface from contact with the plating membrane and recontacting the plating surface with the plating membrane are performed periodically.
  4. 4. The method of claim 1, further comprising positioning a diffusion member below the plating membrane, the diffusion member being configured to support the plating membrane during plating operations.
  5. 5. The method of claim 1, further comprising flowing the plating solution through the plating membrane during plating operations.
  6. 6. The method of claim 1, wherein the duration of the removing step corresponds with an amount of time required to replenish depleted plating solution at the plating surface.
  7. 7. The method of claim 1, wherein contacting a plating surface of the semiconductor substrate with a plating membrane comprises positioning the substrate adjacent a diffusion member, wherein the plating membrane is between the substrate and the diffusion member.
  8. 8. The method of claim 1, wherein the plating membrane is fluid permeable.
  9. 9. The method of claim 1, wherein the plating membrane includes fluid supply channels configured to supply electrolyte to the plating surface of the substrate and fluid recirculation channels configured to remove depleted electrolyte from the plating surface.
  10. 10. The method of claim 1, further comprising supplying electrolyte to a plurality of recessions formed in the plating membrane.
  11. 11. The method of claim 10, wherein the plurality of recessions are in fluid communication with at least one fluid supply channel and at least one fluid recirculation channel.
  12. 12. A method for electrochemically plating a metal on a substrate, comprising:
    lowering the substrate toward a plating membrane to place the substrate in a plating position wherein a plating solution containing metal ions to be plated;
    applying a plating bias for a first period of time to the substrate to plate the metal ions in the plating solution on a plating surface of the substrate;
    increasing the distance between the plating membrane and the substrate for a second period of time; and
    reducing the distance between the plating membrane and the substrate.
  13. 13. The method of claim 12, wherein lowering the substrate comprises:
    immersing the substrate in the plating solution; and
    contacting the plating surface of the substrate with the plating membrane.
  14. 14. The method of claim 12, further comprising performing applying the plating bias, increasing the distance and reducing the distance periodically.
  15. 15. The method of claim 12, further comprising rotating the substrate.
  16. 16. The method of claim 12, wherein the first period of time is an amount of time it takes to deplete the plating solution between the plating membrane and the substrate.
  17. 17. The method of claim 12, wherein the second period of time is an amount of time it takes to circulate the plating solution between the plating membrane and the substrate.
  18. 18. A method plating a metal on a substrate, comprising:
    positioning the substrate in a plating position;
    supplying a plating solution to a plating surface of the substrate using a plating membrane;
    applying a plating bias to plate the metal on the plating surface;
    removing the plating solution from the plating surface using fluid draining channels in the plating membrane; and
    repeating the applying the plating bias and removing the plating solution.
  19. 19. The method of claim 18, wherein removing the plating solution from the plating surface comprises increasing the distance between the plating surface and the plating membrane.
  20. 20. The method of claim 18, further comprising rotating the substrate during the applying the plating bias.
US11345011 2003-02-06 2006-02-01 Contact plating apparatus Abandoned US20060124468A1 (en)

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Application Number Priority Date Filing Date Title
US10360234 US7025861B2 (en) 2003-02-06 2003-02-06 Contact plating apparatus
US11345011 US20060124468A1 (en) 2003-02-06 2006-02-01 Contact plating apparatus

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006060520A3 (en) * 2004-11-30 2006-09-14 Du Pont Membrane-limited selective electroplating of a conductive surface
US20070261964A1 (en) * 2006-05-10 2007-11-15 Semitool, Inc. Reactors, systems, and methods for electroplating microfeature workpieces
DE102009021561A1 (en) * 2009-05-15 2010-11-18 Rolls-Royce Deutschland Ltd & Co Kg Method and apparatus for surface etching of integrally bladed rotors

Citations (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649509A (en) * 1969-07-08 1972-03-14 Buckbee Mears Co Electrodeposition systems
US3727620A (en) * 1970-03-18 1973-04-17 Fluoroware Of California Inc Rinsing and drying device
US3770598A (en) * 1972-01-21 1973-11-06 Oxy Metal Finishing Corp Electrodeposition of copper from acid baths
US4027686A (en) * 1973-01-02 1977-06-07 Texas Instruments Incorporated Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water
US4092176A (en) * 1975-12-11 1978-05-30 Nippon Electric Co., Ltd. Apparatus for washing semiconductor wafers
US4110176A (en) * 1975-03-11 1978-08-29 Oxy Metal Industries Corporation Electrodeposition of copper
US4113492A (en) * 1976-04-08 1978-09-12 Fuji Photo Film Co., Ltd. Spin coating process
US4304641A (en) * 1980-11-24 1981-12-08 International Business Machines Corporation Rotary electroplating cell with controlled current distribution
US4315059A (en) * 1980-07-18 1982-02-09 The United States Of America As Represented By The United States Department Of Energy Molten salt lithium cells
US4326940A (en) * 1979-05-21 1982-04-27 Rohco Incorporated Automatic analyzer and control system for electroplating baths
US4336114A (en) * 1981-03-26 1982-06-22 Hooker Chemicals & Plastics Corp. Electrodeposition of bright copper
US4376685A (en) * 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
US4405416A (en) * 1980-07-18 1983-09-20 Raistrick Ian D Molten salt lithium cells
US4428815A (en) * 1983-04-28 1984-01-31 Western Electric Co., Inc. Vacuum-type article holder and methods of supportively retaining articles
US4435266A (en) * 1981-10-01 1984-03-06 Emi Limited Electroplating arrangements
US4489740A (en) * 1982-12-27 1984-12-25 General Signal Corporation Disc cleaning machine
US4510176A (en) * 1983-09-26 1985-04-09 At&T Bell Laboratories Removal of coating from periphery of a semiconductor wafer
US4518678A (en) * 1983-12-16 1985-05-21 Advanced Micro Devices, Inc. Selective removal of coating material on a coated substrate
US4519846A (en) * 1984-03-08 1985-05-28 Seiichiro Aigo Process for washing and drying a semiconductor element
US4693805A (en) * 1986-02-14 1987-09-15 Boe Limited Method and apparatus for sputtering a dielectric target or for reactive sputtering
US4732785A (en) * 1986-09-26 1988-03-22 Motorola, Inc. Edge bead removal process for spin on films
US4789445A (en) * 1983-05-16 1988-12-06 Asarco Incorporated Method for the electrodeposition of metals
US5039381A (en) * 1989-05-25 1991-08-13 Mullarkey Edward J Method of electroplating a precious metal on a semiconductor device, integrated circuit or the like
US5055425A (en) * 1989-06-01 1991-10-08 Hewlett-Packard Company Stacked solid via formation in integrated circuit systems
US5092975A (en) * 1988-06-14 1992-03-03 Yamaha Corporation Metal plating apparatus
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
US5162260A (en) * 1989-06-01 1992-11-10 Hewlett-Packard Company Stacked solid via formation in integrated circuit systems
US5222310A (en) * 1990-05-18 1993-06-29 Semitool, Inc. Single wafer processor with a frame
US5224504A (en) * 1988-05-25 1993-07-06 Semitool, Inc. Single wafer processor
US5230743A (en) * 1988-05-25 1993-07-27 Semitool, Inc. Method for single wafer processing in which a semiconductor wafer is contacted with a fluid
US5252807A (en) * 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
US5256274A (en) * 1990-08-01 1993-10-26 Jaime Poris Selective metal electrodeposition process
US5259407A (en) * 1990-06-15 1993-11-09 Matrix Inc. Surface treatment method and apparatus for a semiconductor wafer
US5281325A (en) * 1992-07-02 1994-01-25 Berg N Edward Uniform electroplating of printed circuit boards
US5290361A (en) * 1991-01-24 1994-03-01 Wako Pure Chemical Industries, Ltd. Surface treating cleaning method
US5316974A (en) * 1988-12-19 1994-05-31 Texas Instruments Incorporated Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer
US5328589A (en) * 1992-12-23 1994-07-12 Enthone-Omi, Inc. Functional fluid additives for acid copper electroplating baths
US5349978A (en) * 1992-06-04 1994-09-27 Tokyo Ohka Kogyo Co., Ltd. Cleaning device for cleaning planar workpiece
US5377708A (en) * 1989-03-27 1995-01-03 Semitool, Inc. Multi-station semiconductor processor with volatilization
US5429733A (en) * 1992-05-21 1995-07-04 Electroplating Engineers Of Japan, Ltd. Plating device for wafer
US5447615A (en) * 1994-02-02 1995-09-05 Electroplating Engineers Of Japan Limited Plating device for wafer
US5516412A (en) * 1995-05-16 1996-05-14 International Business Machines Corporation Vertical paddle plating cell
US5608943A (en) * 1993-08-23 1997-03-11 Tokyo Electron Limited Apparatus for removing process liquid
US5625170A (en) * 1994-01-18 1997-04-29 Nanometrics Incorporated Precision weighing to monitor the thickness and uniformity of deposited or etched thin film
US5651865A (en) * 1994-06-17 1997-07-29 Eni Preferential sputtering of insulators from conductive targets
US5705223A (en) * 1994-07-26 1998-01-06 International Business Machine Corp. Method and apparatus for coating a semiconductor wafer
US5718813A (en) * 1992-12-30 1998-02-17 Advanced Energy Industries, Inc. Enhanced reactive DC sputtering system
US5723028A (en) * 1990-08-01 1998-03-03 Poris; Jaime Electrodeposition apparatus with virtual anode
US6103628A (en) * 1998-12-01 2000-08-15 Nutool, Inc. Reverse linear polisher with loadable housing
US6103085A (en) * 1998-12-04 2000-08-15 Advanced Micro Devices, Inc. Electroplating uniformity by diffuser design
US6176992B1 (en) * 1998-11-03 2001-01-23 Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6251050B1 (en) * 1992-11-02 2001-06-26 Gary L. Johnston Standup exercise apparatus
US6251235B1 (en) * 1999-03-30 2001-06-26 Nutool, Inc. Apparatus for forming an electrical contact with a semiconductor substrate
US6274010B1 (en) * 1997-10-07 2001-08-14 Process Automation International Limited Electroplating apparatus
US6328872B1 (en) * 1999-04-03 2001-12-11 Nutool, Inc. Method and apparatus for plating and polishing a semiconductor substrate
US6352623B1 (en) * 1999-12-17 2002-03-05 Nutool, Inc. Vertically configured chamber used for multiple processes
US6355153B1 (en) * 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6409904B1 (en) * 1998-12-01 2002-06-25 Nutool, Inc. Method and apparatus for depositing and controlling the texture of a thin film
US6413403B1 (en) * 2000-02-23 2002-07-02 Nutool Inc. Method and apparatus employing pad designs and structures with improved fluid distribution
US6464571B2 (en) * 1998-12-01 2002-10-15 Nutool, Inc. Polishing apparatus and method with belt drive system adapted to extend the lifetime of a refreshing polishing belt provided therein
US6468139B1 (en) * 1998-12-01 2002-10-22 Nutool, Inc. Polishing apparatus and method with a refreshing polishing belt and loadable housing
US6478936B1 (en) * 2000-05-11 2002-11-12 Nutool Inc. Anode assembly for plating and planarizing a conductive layer
US6482307B2 (en) * 2000-05-12 2002-11-19 Nutool, Inc. Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing
US6497800B1 (en) * 2000-03-17 2002-12-24 Nutool Inc. Device providing electrical contact to the surface of a semiconductor workpiece during metal plating
US6514258B1 (en) * 1998-11-04 2003-02-04 Implant Innovations, Inc. Penetration limiting stop elements for a drill bit used for bone tissue
US6527920B1 (en) * 2000-05-10 2003-03-04 Novellus Systems, Inc. Copper electroplating apparatus
US6534116B2 (en) * 2000-08-10 2003-03-18 Nutool, Inc. Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence
US6974525B2 (en) * 2001-02-12 2005-12-13 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182823A (en) 1982-04-21 1983-10-25 Nec Corp Plating apparatus for semiconductor wafer
JPS63118093A (en) 1986-11-05 1988-05-23 Tanaka Electron Ind Co Ltd Method for tinning electronic parts
JPH04131395A (en) 1990-09-21 1992-05-06 Ebara Corp Method and device for plating semiconductor wafer
JP2697773B2 (en) 1991-03-11 1998-01-14 日本エレクトロプレイテイング・エンジニヤース 株式会社 Plating method
JPH0617291A (en) 1992-07-03 1994-01-25 Nec Corp Metal plating device
US5807469A (en) 1995-09-27 1998-09-15 Intel Corporation Flexible continuous cathode contact circuit for electrolytic plating of C4, tab microbumps, and ultra large scale interconnects
US6027631A (en) 1997-11-13 2000-02-22 Novellus Systems, Inc. Electroplating system with shields for varying thickness profile of deposited layer
US6159354A (en) 1997-11-13 2000-12-12 Novellus Systems, Inc. Electric potential shaping method for electroplating
US6179983B1 (en) 1997-11-13 2001-01-30 Novellus Systems, Inc. Method and apparatus for treating surface including virtual anode
US6156167A (en) 1997-11-13 2000-12-05 Novellus Systems, Inc. Clamshell apparatus for electrochemically treating semiconductor wafers
US6126798A (en) 1997-11-13 2000-10-03 Novellus Systems, Inc. Electroplating anode including membrane partition system and method of preventing passivation of same
US6251250B1 (en) 1999-09-03 2001-06-26 Arthur Keigler Method of and apparatus for controlling fluid flow and electric fields involved in the electroplating of substantially flat workpieces and the like and more generally controlling fluid flow in the processing of other work piece surfaces as well

Patent Citations (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649509A (en) * 1969-07-08 1972-03-14 Buckbee Mears Co Electrodeposition systems
US3727620A (en) * 1970-03-18 1973-04-17 Fluoroware Of California Inc Rinsing and drying device
US3770598A (en) * 1972-01-21 1973-11-06 Oxy Metal Finishing Corp Electrodeposition of copper from acid baths
US4027686A (en) * 1973-01-02 1977-06-07 Texas Instruments Incorporated Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water
US4110176A (en) * 1975-03-11 1978-08-29 Oxy Metal Industries Corporation Electrodeposition of copper
US4092176A (en) * 1975-12-11 1978-05-30 Nippon Electric Co., Ltd. Apparatus for washing semiconductor wafers
US4113492A (en) * 1976-04-08 1978-09-12 Fuji Photo Film Co., Ltd. Spin coating process
US4326940A (en) * 1979-05-21 1982-04-27 Rohco Incorporated Automatic analyzer and control system for electroplating baths
US4405416A (en) * 1980-07-18 1983-09-20 Raistrick Ian D Molten salt lithium cells
US4315059A (en) * 1980-07-18 1982-02-09 The United States Of America As Represented By The United States Department Of Energy Molten salt lithium cells
US4304641A (en) * 1980-11-24 1981-12-08 International Business Machines Corporation Rotary electroplating cell with controlled current distribution
US4336114A (en) * 1981-03-26 1982-06-22 Hooker Chemicals & Plastics Corp. Electrodeposition of bright copper
US4376685A (en) * 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
US4435266A (en) * 1981-10-01 1984-03-06 Emi Limited Electroplating arrangements
US4489740A (en) * 1982-12-27 1984-12-25 General Signal Corporation Disc cleaning machine
US4428815A (en) * 1983-04-28 1984-01-31 Western Electric Co., Inc. Vacuum-type article holder and methods of supportively retaining articles
US4789445A (en) * 1983-05-16 1988-12-06 Asarco Incorporated Method for the electrodeposition of metals
US4510176A (en) * 1983-09-26 1985-04-09 At&T Bell Laboratories Removal of coating from periphery of a semiconductor wafer
US4518678A (en) * 1983-12-16 1985-05-21 Advanced Micro Devices, Inc. Selective removal of coating material on a coated substrate
US4519846A (en) * 1984-03-08 1985-05-28 Seiichiro Aigo Process for washing and drying a semiconductor element
US4693805A (en) * 1986-02-14 1987-09-15 Boe Limited Method and apparatus for sputtering a dielectric target or for reactive sputtering
US4732785A (en) * 1986-09-26 1988-03-22 Motorola, Inc. Edge bead removal process for spin on films
US5224504A (en) * 1988-05-25 1993-07-06 Semitool, Inc. Single wafer processor
US5230743A (en) * 1988-05-25 1993-07-27 Semitool, Inc. Method for single wafer processing in which a semiconductor wafer is contacted with a fluid
US5092975A (en) * 1988-06-14 1992-03-03 Yamaha Corporation Metal plating apparatus
US5316974A (en) * 1988-12-19 1994-05-31 Texas Instruments Incorporated Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer
US5377708A (en) * 1989-03-27 1995-01-03 Semitool, Inc. Multi-station semiconductor processor with volatilization
US5039381A (en) * 1989-05-25 1991-08-13 Mullarkey Edward J Method of electroplating a precious metal on a semiconductor device, integrated circuit or the like
US5162260A (en) * 1989-06-01 1992-11-10 Hewlett-Packard Company Stacked solid via formation in integrated circuit systems
US5055425A (en) * 1989-06-01 1991-10-08 Hewlett-Packard Company Stacked solid via formation in integrated circuit systems
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
US5222310A (en) * 1990-05-18 1993-06-29 Semitool, Inc. Single wafer processor with a frame
US5259407A (en) * 1990-06-15 1993-11-09 Matrix Inc. Surface treatment method and apparatus for a semiconductor wafer
US5252807A (en) * 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
US5256274A (en) * 1990-08-01 1993-10-26 Jaime Poris Selective metal electrodeposition process
US5723028A (en) * 1990-08-01 1998-03-03 Poris; Jaime Electrodeposition apparatus with virtual anode
US5290361A (en) * 1991-01-24 1994-03-01 Wako Pure Chemical Industries, Ltd. Surface treating cleaning method
US5429733A (en) * 1992-05-21 1995-07-04 Electroplating Engineers Of Japan, Ltd. Plating device for wafer
US5349978A (en) * 1992-06-04 1994-09-27 Tokyo Ohka Kogyo Co., Ltd. Cleaning device for cleaning planar workpiece
US5281325A (en) * 1992-07-02 1994-01-25 Berg N Edward Uniform electroplating of printed circuit boards
US6251050B1 (en) * 1992-11-02 2001-06-26 Gary L. Johnston Standup exercise apparatus
US5328589A (en) * 1992-12-23 1994-07-12 Enthone-Omi, Inc. Functional fluid additives for acid copper electroplating baths
US5718813A (en) * 1992-12-30 1998-02-17 Advanced Energy Industries, Inc. Enhanced reactive DC sputtering system
US5608943A (en) * 1993-08-23 1997-03-11 Tokyo Electron Limited Apparatus for removing process liquid
US5625170A (en) * 1994-01-18 1997-04-29 Nanometrics Incorporated Precision weighing to monitor the thickness and uniformity of deposited or etched thin film
US5447615A (en) * 1994-02-02 1995-09-05 Electroplating Engineers Of Japan Limited Plating device for wafer
US5651865A (en) * 1994-06-17 1997-07-29 Eni Preferential sputtering of insulators from conductive targets
US5705223A (en) * 1994-07-26 1998-01-06 International Business Machine Corp. Method and apparatus for coating a semiconductor wafer
US5516412A (en) * 1995-05-16 1996-05-14 International Business Machines Corporation Vertical paddle plating cell
US6274010B1 (en) * 1997-10-07 2001-08-14 Process Automation International Limited Electroplating apparatus
US6402925B2 (en) * 1998-11-03 2002-06-11 Nutool, Inc. Method and apparatus for electrochemical mechanical deposition
US6176992B1 (en) * 1998-11-03 2001-01-23 Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6514258B1 (en) * 1998-11-04 2003-02-04 Implant Innovations, Inc. Penetration limiting stop elements for a drill bit used for bone tissue
US6464571B2 (en) * 1998-12-01 2002-10-15 Nutool, Inc. Polishing apparatus and method with belt drive system adapted to extend the lifetime of a refreshing polishing belt provided therein
US6207572B1 (en) * 1998-12-01 2001-03-27 Nutool, Inc. Reverse linear chemical mechanical polisher with loadable housing
US6103628A (en) * 1998-12-01 2000-08-15 Nutool, Inc. Reverse linear polisher with loadable housing
US6468139B1 (en) * 1998-12-01 2002-10-22 Nutool, Inc. Polishing apparatus and method with a refreshing polishing belt and loadable housing
US6409904B1 (en) * 1998-12-01 2002-06-25 Nutool, Inc. Method and apparatus for depositing and controlling the texture of a thin film
US6103085A (en) * 1998-12-04 2000-08-15 Advanced Micro Devices, Inc. Electroplating uniformity by diffuser design
US6471847B2 (en) * 1999-03-30 2002-10-29 Nutool, Inc. Method for forming an electrical contact with a semiconductor substrate
US6251235B1 (en) * 1999-03-30 2001-06-26 Nutool, Inc. Apparatus for forming an electrical contact with a semiconductor substrate
US6328872B1 (en) * 1999-04-03 2001-12-11 Nutool, Inc. Method and apparatus for plating and polishing a semiconductor substrate
US6355153B1 (en) * 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6352623B1 (en) * 1999-12-17 2002-03-05 Nutool, Inc. Vertically configured chamber used for multiple processes
US6413388B1 (en) * 2000-02-23 2002-07-02 Nutool Inc. Pad designs and structures for a versatile materials processing apparatus
US6413403B1 (en) * 2000-02-23 2002-07-02 Nutool Inc. Method and apparatus employing pad designs and structures with improved fluid distribution
US6497800B1 (en) * 2000-03-17 2002-12-24 Nutool Inc. Device providing electrical contact to the surface of a semiconductor workpiece during metal plating
US6527920B1 (en) * 2000-05-10 2003-03-04 Novellus Systems, Inc. Copper electroplating apparatus
US6478936B1 (en) * 2000-05-11 2002-11-12 Nutool Inc. Anode assembly for plating and planarizing a conductive layer
US6482307B2 (en) * 2000-05-12 2002-11-19 Nutool, Inc. Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing
US6534116B2 (en) * 2000-08-10 2003-03-18 Nutool, Inc. Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence
US6974525B2 (en) * 2001-02-12 2005-12-13 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems

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