JP2000100761A - Semiconductor device manufacturing method and apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To shorten the rinsing time and also to reduce the amount of rinsing by quickly substituting a chemical solution deposited on a wafer without causing deposition of particles. SOLUTION: A reference numeral 1 is a rinse liquid supply part 2, a rinse bath 3, a silicon wafer, 4 a wafer-holding guide, 5 a punched hole, 6 a drain liquid drain part, 7 an exhaust liquid valve respectively. A supply rate of the rinse liquid from a top of the bath is set nearly equal to the liquid exhausting rate from a bottom of the bath, so that the wafer in the rinse liquid will not expose above a liquid surface. Then the rinse liquid is also made to flow in the bath without causing stay or convection of the liquid, whereby a chemical liquid deposited on the wafer can be quickly substituted and the wafer can be rinsed without newly causing deposition of particles.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method and an apparatus for manufacturing a semiconductor device using a silicon wafer as a substrate.

[0002]

2. Description of the Related Art In a wet process for manufacturing a semiconductor, a multi-dip wet processing method / processing apparatus capable of processing a plurality of chemical solutions has been conventionally used.

[0003] For example, in a cleaning method called RCA cleaning, an apparatus configured in the order of an ammonia / hydrogen cleaning tank, a pure water rinsing tank, a hydrochloric acid / hydrogen peroxide cleaning tank, a pure water rinsing tank, a final pure water rinsing tank, and a drying tank is used. In addition, a plurality of silicon wafers are collectively immersed in each tank from the upstream tank for a certain period of time via a transfer mechanism for processing. During this immersion, organic substances, metal impurities and the like adhering to the wafer surface are dissolved and peeled off and washed. In such an apparatus, a pure water rinsing tank is provided between different chemical solutions, and the chemical solution attached to the wafer is washed away in the previous tank so that the chemical solution is not brought into the next tank.
This is to prevent crystal precipitation and composition fluctuation due to reaction between chemical solutions having different components.

[0004] Generally, in this pure water rinsing, an overflow rinse in which pure water is supplied from a lower part of the tank and overflows from an upper part of the tank to rinse the pure water, and a supply of pure water from upper and lower parts of the tank and rapid drainage from the lower part are performed. A repeating quick dump rinse is used.

[0005]

However, in the above-mentioned conventional overflow rinsing such as the pure water rinsing in the vacuum drying method disclosed in Japanese Patent Application Laid-Open No. 7-193037, even if pure water is supplied from the lower part of the tank, the wafer existing in the tank is not removed. And the carrier, carrier mounting table, etc. become obstacles, causing local stagnation and convection of the liquid in the tank, and the replacement of the liquid does not proceed quickly, rinsing takes time and the amount of pure water used is reduced. There was a problem that it was not possible.

[0006] In particular, the production and drainage of pure water requires a large amount of energy and the cost is high. Considering the impact on the global environment in recent years, it is essential to review the energy-intensive production process.

[0007] Japanese Patent Application Laid-Open No. Hei 8-274057 proposes a cleaning apparatus and a cleaning method for solving this problem. However, in JP-A-8-274057, the outlet of the pure water is from the lower side surface of the washing tank, and the supply port is the upper part of the tank on a diagonal line. In this configuration, the flow of pure water is oblique, while the wafer is placed vertically in the tank, so the wafer itself becomes an obstacle, and it is difficult to quickly replace the liquid between the wafers. is there. In addition, pure water hardly flows in the corner area in the tank, and liquid pool is likely to occur.

Further, Japanese Patent Application Laid-Open No. 4-133433 also proposes that the supply section of pure water is set in the middle part of the washing tank and the drain section is set in the lower part of the washing tank in order to shorten the rinse time of pure water and reduce the amount of use. I have. However, in this publication, the flow of pure water is separated into overflow (upflow) to the upper part of the tank and flow (downflow) to the lower outlet. In this case, the replacement of the liquid in the central portion of the wafer does not proceed quickly. In addition, the flow of the liquid in the tank becomes complicated, and rapid rinsing is still difficult due to the convection and stagnation.

In the other conventional quick dump rinse described above, the wafer is exposed on the liquid surface every time the liquid is drained, and particles adhere by crossing the gas-liquid interface. There was a problem that.

Accordingly, the present invention provides a method and apparatus for manufacturing a semiconductor device capable of quickly replacing a liquid adhering to a wafer without adhering particles, shortening a rinsing time, and reducing an amount of a rinsing liquid. The purpose is to provide.

[0011]

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor device, wherein a silicon wafer to which a chemical liquid is adhered in a semiconductor wet process is rinsed with a rinse liquid without exposing the wafer to a liquid surface. It is characterized in that there is a flow of a rinsing liquid below the upper part of the wafer vertically set in the rinsing tank.

According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor device.
The rinsing liquid is pure water.

According to a third aspect of the present invention, there is provided an apparatus for manufacturing a semiconductor device.
In the step of rinsing a silicon wafer to which a chemical liquid has adhered in a semiconductor wet process with a rinsing liquid, there is a flow of the rinsing liquid below the upper side of the wafer vertically set in the rinsing tank without exposing the wafer on the liquid surface. It is characterized by using a manufacturing method.

According to a fourth aspect of the present invention, there is provided a semiconductor device manufacturing apparatus, comprising:
It is characterized in that a manufacturing method in which the rinsing liquid is pure water is used.

[0015]

According to the above construction, the rinsing liquid supplied from above the wafer flows without stagnating and convection to the bottom by the flow, so that the chemical liquid attached to the wafer can be quickly replaced and rinsed, thereby reducing the rinsing time. This has the effect of reducing the amount of rinsing liquid used. Further, since the wafer is always immersed in the rinsing liquid, there is the effect that the wafer does not cross the gas-liquid interface and the adhesion of particles can be minimized.

Further, according to the above configuration, by using the method of manufacturing a semiconductor device according to claim 1 for pure water rinsing,
This has the effect of reducing the amount of pure water used in most wet processes of semiconductor manufacturing and shortening the pure water rinsing time.

[0017]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a view showing a main part of a first embodiment of a method of manufacturing a semiconductor device according to the present invention.
To explain the configuration, 1 is a rinsing liquid supply unit, 2 is a rinsing tank, 3 is a silicon wafer, 4 is a wafer holding guide, 5
Is a punching opening, 6 is a drainage section, and 7 is a drainage valve.

First, it is assumed that a silicon wafer is carried into a rinsing tank filled with a rinsing liquid from a chemical tank for treating with various chemicals by a transport mechanism generally used in a wet processing apparatus. The wafer is held by a wafer holding guide in the tank and is free standing. When the wafer is loaded, the rinsing liquid is supplied from the supply unit provided at the upper part of the tank, the drain valve at the lower part of the tank is opened, and the rinsing liquid in the tank is drained from the drain part by gravity.

Here, the supply rate of the rinsing liquid from the upper part of the tank and the drainage rate from the lower part of the tank are made substantially the same so that the wafer in the rinsing liquid is not exposed from the liquid surface, and the rinsing liquid is supplied from the upper part of the tank. By taking the depth from the liquid level of the rinsing liquid to the top of the wafer to such an extent that the rinsing liquid does not disturb the downward flow of the rinsing liquid, the rinsing liquid flows without stagnating and convection in the tank and adheres to the wafer. Can be quickly replaced and rinsed. In addition, since the wafer is always immersed in the rinsing liquid, the adhesion of particles can be minimized without crossing the gas-liquid interface.

It is preferable to use a pump for supplying and draining the rinsing liquid, since the control of the supply rate and the drain rate of the liquid becomes easy and the control of the rinsing time becomes easier.

[0022]

As described above, according to the method and the apparatus for manufacturing a semiconductor device of the present invention, the rinsing liquid supplied from above the wafer in the rinsing tank does not stay and convection to the lower side due to the flow. Since it flows, the chemical liquid attached to the wafer is quickly replaced, which has the effect of shortening the rinsing time and reducing the amount of the rinsing liquid used. Further, since the wafer is always immersed in the rinsing liquid, there is also an effect that new adhesion of particles can be prevented without crossing the gas-liquid interface.

[Brief description of the drawings]

FIG. 1 is a diagram showing an embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 1 rinse liquid supply section 2 rinse tank 3 silicon wafer 4 wafer holding guide 5 punching opening 6 drain section 7 drain valve

Claims (4)

[Claims] In a step of rinsing a silicon wafer to which a chemical liquid has adhered in a semiconductor wet process with a rinsing liquid,
A method of manufacturing a semiconductor device, characterized in that a flow of a rinsing liquid is provided below a wafer vertically disposed in a rinsing bath without exposing the wafer on the liquid surface. 2. The method according to claim 1, wherein said rinsing liquid is pure water. 3. An apparatus for manufacturing a semiconductor device using the method for manufacturing a semiconductor device according to claim 1. 4. An apparatus for manufacturing a semiconductor device using the method for manufacturing a semiconductor device according to claim 2.