JP2000126702A - Apparatus and method for rinsing - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve a yield of a semiconductor device or the like to be obtained, or enhance reliability on a function by inhibiting impurities such as a particle from sticking to a body to be rinsed such as a semiconductor wafer in a rinsing treatment. SOLUTION: In this method, when a semiconductor wafer W to which cleaning treatment is applied with an etching chemical solution is to be treated by water rinsing by immersing into a rinsing treatment tank 22 in the next process, feed of pure water 21 to be fed into the rinsing treatment tank 22 from a feed pipe 23 is stopped, and up-flow of the pure water 21 in the rinsing treatment tank 22 is stopped.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning apparatus and a cleaning method for cleaning a body to be cleaned by immersing the body in a liquid. The present invention relates to a cleaning apparatus and a cleaning method for immersing in pure water or the like to clean the surface.

[0002]

2. Description of the Related Art With the demand for high-density integration and miniaturization in the technical field of semiconductor devices and the like, it is important to remove impurities attached to the surface of a semiconductor wafer in a manufacturing process. Is a factor that greatly affects the yield or reliability. Therefore, in order to remove impurities adhering to the surface of the semiconductor wafer, a multi-tank dipping process employing a plurality of cleaning steps such as chemical cleaning or pure water cleaning is generally performed.

[0003] This multi-tank type dip processing is disclosed in
As disclosed in Japanese Patent No. 83483, etc., a chemical cleaning tank, a water cleaning tank, and a plurality of other cleaning tanks are provided, and semiconductor wafers are sequentially immersed in these cleaning tanks to clean the surface. is there.

[0004]

In such a multi-tank dipping process, for example, a semiconductor wafer is immersed in an etching chemical bath to perform a cleaning process, and then the etching chemical is washed away. When a semiconductor wafer is immersed in a washing bath and washed with water, particles (fine particles) are generated and adhere to the surface of the semiconductor wafer in a vertical streak shape as shown in FIGS. 5 (a) and 5 (b). There is. This phenomenon is due to the fact that the residue of the substance etched by the etching chemical is brought to the washing tank while being attached to the surface of the semiconductor wafer, and when the semiconductor wafer is immersed in the washing tank, it is pulled upward. It is caused by

The particles adhering to the surface of the semiconductor wafer are difficult to remove by another chemical cleaning treatment, and the semiconductor device is manufactured while adhering to the surface of the semiconductor wafer. This is a factor that leads to a decrease in reliability and the like.

The present invention has been made in view of the above-mentioned problems of the prior art, and an object of the present invention is to cause impurities such as particles to adhere to an object to be cleaned such as a semiconductor wafer in a cleaning process. It is an object of the present invention to provide a cleaning apparatus and a cleaning method capable of suppressing the occurrence of the problem and improving the yield of the obtained semiconductor device or the like or improving the functional reliability.

[0007]

Means for Solving the Problems The inventors of the present invention have conducted intensive studies to solve the above-mentioned problems, and as a result, when the object to be cleaned is immersed in the cleaning tank, the level of the object to be cleaned and the level of the cleaning liquid are reduced. Focusing on the relationship, an invention having the following configuration has been found.
That is, the cleaning apparatus of the present invention includes a cleaning tank filled with the cleaning liquid and formed so that the cleaning liquid can flow out from the upper opening, and a supply unit for supplying the cleaning liquid to the cleaning tank. A washing apparatus for washing a surface of a body to be cleaned by immersing the body to be cleaned in the cleaning tank from the opening,
The supply means stops supplying the cleaning liquid when the cleaning target is immersed in the cleaning tank.
In the cleaning apparatus having the above-described configuration, further, a conveying unit that conveys and immerses the object to be cleaned into the cleaning tank is provided so that the level of the cleaning liquid filled in the cleaning tank does not undulate. A configuration in which the object to be cleaned is immersed at a transport speed equal to or lower than a predetermined value can be adopted.

Further, the cleaning apparatus of the present invention comprises a cleaning tank filled with the cleaning liquid and formed so that the cleaning liquid can flow out from the upper opening, and a supply means for supplying the cleaning liquid to the cleaning tank. A cleaning device for immersing the object to be cleaned into the cleaning tank by immersing the object into the cleaning tank through the opening; Supply the cleaning liquid at a flow rate equal to or less than a predetermined value so that the liquid level of the cleaning liquid filled in the processing tank does not undulate,
It is characterized by: In the cleaning apparatus having the above-described configuration, further, a conveying unit that conveys and immerses the object to be cleaned into the cleaning tank is provided so that the level of the cleaning liquid filled in the cleaning tank does not undulate. A configuration in which the object to be cleaned is immersed at a transport speed equal to or lower than a predetermined value can be adopted. Further, in the cleaning device having the above configuration, the supply means has a switching valve for switching a supply flow rate of the cleaning liquid, and one supply flow rate switched by the switching valve is set to a flow rate equal to or less than the predetermined value. Can be adopted.

Further, the cleaning apparatus of the present invention includes a cleaning tank filled with the cleaning liquid and formed so that the cleaning liquid can flow out of the upper opening, and a transport means for transporting the object to be cleaned. A cleaning apparatus for transporting a body to be cleaned to a cleaning tank by a transport unit and immersing the body to be cleaned by washing the surface of the body to be cleaned. In addition, the object to be cleaned is immersed at a transport speed of a predetermined value or less so that the level of the cleaning liquid filled in the cleaning tank is not wavy.

In the cleaning method of the present invention, the surface of the object to be cleaned is washed while the cleaning object is immersed in the cleaning tank and the cleaning liquid is supplied from the upper opening while the cleaning liquid is supplied to the cleaning tank. In the cleaning method, the supply of the cleaning liquid to the cleaning tank is stopped when the object to be cleaned is immersed in the cleaning tank. In the cleaning method having the above configuration,
Further, it is possible to adopt a configuration in which the transport speed when the object to be cleaned is immersed in the cleaning bath is set to a speed equal to or lower than a predetermined value so that the level of the cleaning liquid filled in the cleaning bath is not wavy. Wear.

Further, in the cleaning method of the present invention, the surface of the object to be cleaned is immersed in the cleaning tank and the surface of the object to be cleaned is discharged while the cleaning liquid is supplied to the cleaning tank and the cleaning liquid flows out from the upper opening. A cleaning method for cleaning, when immersing the object to be cleaned in the cleaning tank, supplying the cleaning liquid at a flow rate equal to or less than a predetermined value, so that the level of the cleaning liquid filled in the cleaning tank is not wavy. It is characterized by: In the cleaning method having the above structure, the transport speed when the object to be cleaned is immersed in the cleaning bath is set to a speed equal to or lower than a predetermined value so that the surface of the cleaning liquid filled in the cleaning bath does not become wavy. The configuration can be adopted.

Further, in the cleaning method of the present invention, the surface of the object to be cleaned is immersed in the cleaning tank and the surface of the object to be cleaned is allowed to flow out of the upper opening while supplying the cleaning liquid to the cleaning tank. A cleaning method for cleaning, wherein the transport speed when immersing the object to be cleaned in the cleaning treatment tank is set to a speed equal to or less than a predetermined value so that the surface of the cleaning liquid filled in the cleaning treatment tank does not undulate, It is characterized by:

[0013] In the cleaning apparatus and the cleaning method of the present invention, for example, an object to be cleaned which has been preliminarily cleaned with a chemical solution is removed.
When the cleaning liquid such as water is immersed in the overflowing cleaning tank, the supply of the cleaning liquid to the cleaning tank is stopped, and the flow of the cleaning liquid in the cleaning tank, for example, an upflow (upflow)
Stops, and overflow stops. As a result, the object to be cleaned is immersed without causing the liquid level of the cleaning liquid in the cleaning tank to be wavy. In the cleaning device and the cleaning method having the above-described configurations, when the cleaning target is transported and immersed, the cleaning target is further immersed at a transport speed equal to or lower than a predetermined value. Thereby, the to-be-cleaned object is immersed more reliably without causing the liquid level of the cleaning tank to be wavy.

Further, in the cleaning apparatus and the cleaning method of the present invention, when the object to be cleaned, which has been previously cleaned by a chemical solution, is immersed in a cleaning tank in which a cleaning liquid such as water overflows, the cleaning apparatus is supplied to the cleaning tank. The supply of the cleaning liquid is performed at a flow rate equal to or lower than a predetermined value. Thereby, the flow of the cleaning liquid in the cleaning tank is suppressed, and the object to be cleaned is immersed without generating a wavy surface of the liquid in the cleaning tank. In the cleaning device and the cleaning method having the above-described configurations, when the cleaning target is transported and immersed, the cleaning target is further immersed at a transport speed equal to or lower than a predetermined value. Thereby, the to-be-cleaned object is immersed more reliably without causing the liquid level of the cleaning tank to be wavy. Further, in the cleaning apparatus having the above-described configuration, when a switching valve for switching a supply flow rate of the cleaning liquid is employed, when the body to be cleaned is immersed, by switching this switching valve, the supply of the cleaning liquid to the cleaning tank is determined. It is performed at a flow rate less than the value. Thereby, the flow of the cleaning liquid in the cleaning tank is suppressed, and the object to be cleaned is immersed without generating a wavy surface of the liquid in the cleaning tank.

Further, in the cleaning apparatus and the cleaning method of the present invention, when the object to be cleaned which has been preliminarily cleaned with a chemical solution is transported and immersed in a cleaning tank in which a cleaning liquid such as water overflows, the cleaning object is cleaned. The body is transported at a transport speed equal to or lower than a predetermined value. As a result, the object to be cleaned is immersed without causing the liquid level in the cleaning tank to be wavy.

[0016]

Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a schematic diagram showing a first embodiment of a cleaning apparatus according to the present invention. The cleaning apparatus includes a first cleaning processing section 10 for performing cleaning with an etching chemical and a second cleaning processing section for performing a water cleaning processing as a post-process. The cleaning unit 20 includes a cleaning processing unit 20, a transfer arm 30 as transfer means for holding and transferring a semiconductor wafer W as an object to be cleaned, and the like.

The first cleaning section 10 is filled with an etching chemical 11 as a cleaning liquid and has an upper opening 12a.
Out of the etching chemical 11 from the substrate (overflow)
And a supply pipe 13 communicated with the bottom surface of the cleaning tank 12 to supply the etching chemical solution 11 to the cleaning tank 12. The supply pipe 13 is connected to the supply pipe 13. Filter 14 and pump 1
5 and so on.

An opening 1 is provided on the outer periphery of the cleaning tank 12.
An outer peripheral tank 16 for receiving the etching chemical liquid 11 flowing out of the outer peripheral tank 2a is arranged. The etching chemical liquid 11 flowing into the outer peripheral tank 16 is guided to a pump 15 by a return pipe 17, and supplied again through a filter 14 to a supply pipe. The cleaning liquid is supplied to the cleaning tank 12 via the cleaning tank 13. Further, a support member 18 for supporting the immersed semiconductor wafer W at a predetermined position is disposed inside the cleaning processing tank 12.

The second cleaning section 20 is filled with pure water 21 as a cleaning liquid and is formed so that the pure water 21 can flow out (overflow) from an upper opening 22a. A supply pipe 23 communicated with the bottom of the cleaning tank 22 and a pump 25 connected to the supply pipe 23 to supply the pure water 21 to the cleaning tank 22.
Etc. are provided.

An opening 2 is provided on the outer periphery of the cleaning tank 22.
An outer peripheral tank 26 for receiving the pure water 21 flowing out of the outer peripheral tank 2a is arranged. The pure water 21 flowing into the outer peripheral tank 26 is guided to a drainage tank (not shown) by a discharge pipe 27 so that post-processing is performed. It has become. Incidentally, it is also possible to adopt a configuration in which the water is guided to the pump 25 from the drain pipe 27, and is again supplied to the cleaning tank 22 via the supply pipe 23 via a filter or the like. In addition, a support member 28 that supports the immersed semiconductor wafer W at a predetermined position is disposed inside the cleaning tank 22.

The transfer arm 30 as a transfer means includes a first
In the cleaning processing unit 10, the semiconductor wafer W is gripped, immersed in the cleaning processing tank 11, transported vertically so as to be taken out of the cleaning processing tank 11, and the cleaning processing in the first cleaning processing unit 10 is performed. The completed semiconductor wafer W is gripped and transported in the horizontal direction to be positioned in the second cleaning processing unit 20. Further, in the second cleaning processing unit 20, the semiconductor wafer W is gripped and immersed in the cleaning tank 22. It is transported vertically so as to be taken out of the cleaning tank 22.
The transfer arm 30 is driven by a drive mechanism (not shown).

Next, a cleaning method using the cleaning apparatus will be described. First, in the first cleaning processing unit 10, the semiconductor wafer W cleaned by the etching chemical solution 11 in the cleaning processing tank 12 for a predetermined time is gripped by the transfer arm 30 and taken out. Then, in order to perform the water washing process, the transfer arm 30 moves the semiconductor wafer W to the second position.
It is transported to the cleaning section 20.

At this time, about 23 liters / liter is supplied to the cleaning tank 22 of the second cleaning section 20 by driving the pump 25.
The pure water 21 is supplied at a flow rate of min and is adjusted to overflow from the opening 22a. This overflow state is maintained in order to drive out impurities such as particles existing in the cleaning tank 22 before washing the semiconductor wafer W with water.

Next, the semiconductor wafer W is immersed in the cleaning tank 22 by lowering the transfer arm 30 (transferring downward).
Before the lower end of the pure water 21 is immersed in the water surface (liquid surface) 21 a of the pure water 21, for example, before or simultaneously with the start of the descending operation, the drive of the pump 25 is stopped and the pure water 21 into the cleaning tank 22 is stopped.
Stop supplying. Thereby, the upward flow (upflow) of the pure water 21 from the lower side to the upper side in the cleaning processing tank 22 is stopped, and further, the overflow is stopped. As a result, the water surface 21a of the cleaning tank 22 is maintained in a calm state without ripples.

In a state where the water surface 21a without wavyness is maintained, the transfer arm 30 is lowered and the semiconductor wafer W
Is immersed in the cleaning tank 22, and is supported by the support member 28 in a state where all of the semiconductor wafers W are contained below the water surface 21a. Thereafter, the pump 25 is driven again to supply the pure water 21 into the cleaning tank 22 at a flow rate of about 23 liters / min.

Thereafter, the transfer arm 30 is driven again to transfer the semiconductor wafer W upward and take it out, and the surface of the semiconductor wafer W is dried by a drying means (not shown) in the next step.

When the semiconductor wafer W was cleaned by the above cleaning, as shown in FIGS. 2 (a) and 2 (b),
Compared to the conventional cleaning (FIG. 5), the amount of particles and the like adhering to both surfaces of the semiconductor wafer W was significantly reduced. As a result, the yield of semiconductor devices using the semiconductor wafer W is improved, functional reliability such as quality is improved, and high-density integration or miniaturization becomes possible.

In the above-mentioned cleaning method, when the semiconductor wafer W is immersed in the cleaning tank 22, only the supply of the pure water 21 is stopped. In addition, a speed control mechanism is provided on the transfer arm 30. The transfer speed (down speed) of the semiconductor wafer W is set to a predetermined speed at which the water surface 21a is not wavy, that is, about 60 mm / sec or less, preferably about 15
mm / sec, the water surface 2 can be more reliably
The waving of 1a can be prevented, whereby the adhesion of particles and the like on the surface of the semiconductor wafer W can be further reduced.

FIG. 3 is a schematic view showing a second embodiment of the cleaning apparatus according to the present invention. This cleaning apparatus includes a first cleaning processing section 10 for cleaning with an etching chemical, and a water cleaning processing as a post-process. And a transfer arm 30 as transfer means for holding and transferring the semiconductor wafer W as the object to be cleaned. The first cleaning section 10 and the transfer arm 30 are connected to the first
Since this is the same as the embodiment, the description is omitted here.

The second cleaning section 40 is filled with pure water 41 as a cleaning liquid and is formed so that the pure water 41 can flow out (overflow) from an upper opening 42a. In order to supply pure water 41 to the cleaning tank 42, a supply pipe 43 communicated with the bottom of the cleaning tank 42, a switching valve 44 connected to the supply pipe 43, and a second branching valve from the switching valve 44. 1
A branch pipe 45 and a second branch pipe 46, a first pump 47 connected to the first branch pipe 45, a second pump 48 connected to the second branch pipe 46, and the like are provided.

When the switching valve 44 is at the first position, the first branch pipe 45 communicates with the supply pipe 43 so that the pure water 41 having a flow rate of about 23 liter / min flows into the cleaning tank 42. The second branch pipe 46 communicates with the supply pipe 43 when it is in the second position, and the flow rate is about 5 l / min or less, preferably about 2 liters / min.
Pure water 41 at a flow rate of ~ 3 liters / min.
2.

In the present embodiment, two paths, that is, the first branch pipe 45 and the first pump 47, and the second branch pipe 46 and the second pump 48 are provided upstream of the switching valve 44. One path upstream, 1
Two pipes and a pump are provided to supply pure water 41 at a flow rate of about 23 liter / min when the opening degree of the switching valve 44 is large, while a flow rate of about 5 liter / min when the opening degree is small, preferably It is also possible to supply pure water 41 at a flow rate of about 2-3 liters / min.

An opening 4 is provided on the outer periphery of the cleaning tank 42.
An outer peripheral tank 49 for receiving the pure water 41 flowing out of the outer peripheral tank 49 is arranged, and the pure water 41 flowing into the outer peripheral tank 49 is guided to a drain tank (not shown) by a discharge pipe 50.
Post-processing is performed. Incidentally, it is also possible to adopt a configuration in which the water is guided from the drain pipe 50 to the first pump 47 or the second pump 48, and is supplied to the cleaning tank 42 via the supply pipe 43 and the like again via a filter or the like. It is. Further, a support member 51 for supporting the immersed semiconductor wafer W at a predetermined position is disposed inside the cleaning processing tank 42.

Next, a cleaning method using the cleaning apparatus will be described. First, in the first cleaning processing unit 10, the semiconductor wafer W cleaned by the etching chemical solution 11 in the cleaning processing tank 12 for a predetermined time is gripped by the transfer arm 30 and taken out. Then, in order to perform washing with water, the semiconductor wafer W is moved to the second position by the transfer arm 30.
It is transported to the cleaning processing unit 40.

At this time, the switching valve 44 is at the first position, and the cleaning processing tank 42 of the second cleaning processing section 40 is supplied to the cleaning processing tank 42 from the first pump 47 and the first branch pipe 45 via the supply pipe 43. Pure water 41 is supplied at a flow rate of about 23 liter / min and is adjusted to overflow from the opening 42a. This overflow state is maintained in order to drive out impurities such as particles existing in the cleaning tank 42 before washing the semiconductor wafer W with water.

Subsequently, the semiconductor wafer W is immersed in the cleaning tank 42 by lowering (transferring downward) the transfer arm 30. In this immersion, that is, the semiconductor wafer W
The switch valve 44 is switched from the first position to the second position before the lower end is immersed in the water surface (liquid surface) 41a of the pure water 41, for example, before or simultaneously with the start of the lowering operation,
The second branch pipe 46 communicates with the supply pipe 43.
Then, pure water 41 is supplied from the second pump 48 and the second branch pipe 46 to the cleaning tank 41 via the supply pipe 43 at a flow rate of about 2 to 3 liters / min. Thereby, the upward flow (upflow) of the pure water 41 from the lower side to the upper side in the cleaning tank 42 is suppressed, and further, the overflow is suppressed. Thereby, the cleaning treatment tank 42
Is maintained in a calm state without ripples.

In a state where the calm water surface 41a without ripples is maintained, the transport arm 30 is lowered to immerse the semiconductor wafer W in the cleaning tank 42,
Are supported by the support member 51 in a state where all of them are settled below the water surface 41a. Thereafter, the switching valve 44 is again switched from the second position to the first position, and the first branch pipe 45 and the supply pipe 43 are communicated. And the first pump 4
7 and the first branch pipe 45, supply the pure water 41 at a flow rate of about 23 liter / min to the cleaning tank 42 through the supply pipe 43, and maintain this state for a predetermined time to obtain pure water 4
1. Wash with water.

Thereafter, the transfer arm 30 is driven again to transfer and take out the semiconductor wafer W upward, and the surface of the semiconductor wafer W is dried by a drying means (not shown) in the next step.

When the semiconductor wafer W was cleaned by the above cleaning, as shown in FIGS. 2 (a) and 2 (b),
Compared to the conventional cleaning (FIG. 5), the amount of particles and the like adhering to both surfaces of the semiconductor wafer W was significantly reduced. As a result, the yield of semiconductor devices using the semiconductor wafer W is improved, functional reliability such as quality is improved, and high-density integration or miniaturization becomes possible.

In the above-described cleaning method, when the semiconductor wafer W is immersed in the cleaning tank 42, only the supply amount of the pure water 41 is reduced. In addition, a speed control mechanism is provided on the transfer arm 30. The transfer speed (down speed) of the semiconductor wafer W is set to a predetermined speed at which the water surface 41a is not wavy, that is, about 60 mm / sec or less, preferably about 15 m.
By setting it to m / sec, it is possible to more reliably prevent the water surface 41a from waving, and thus it is possible to further reduce the adhesion of particles and the like on the surface of the semiconductor wafer W.

FIG. 4 is a schematic view showing a third embodiment of the cleaning apparatus according to the present invention. This cleaning apparatus includes a first cleaning processing section 10 for performing cleaning with an etching chemical, and a water cleaning and cleaning step as a post-process. And a transfer arm 60 as transfer means for holding and transferring the semiconductor wafer W as the object to be cleaned. Note that the first cleaning processing unit 10 and the second cleaning processing unit 20 are the same as those in the first embodiment, and a description thereof will be omitted.

The transfer arm 60 as a transfer means includes a first
In the cleaning processing unit 10, the semiconductor wafer W is gripped, immersed in the cleaning processing tank 11, transported vertically so as to be taken out of the cleaning processing tank 11, and the cleaning processing in the first cleaning processing unit 10 is performed. The completed semiconductor wafer W is gripped and transported in the horizontal direction to be positioned in the second cleaning processing unit 20. Further, in the second cleaning processing unit 20, the semiconductor wafer W is gripped and immersed in the cleaning tank 22. It is driven by a transfer arm drive mechanism (not shown) so that it is transported vertically so as to be taken out of the cleaning tank 22.

The transfer arm drive mechanism is provided with a speed control mechanism (not shown) for adjusting the speed of movement of the transfer arm 60 to a predetermined speed and controlling at least the semiconductor wafer W in the second cleaning section. When dipping in the cleaning tank 20 of 20, the descent speed (transport speed) can be set to a predetermined speed in a range of about 60 mm / sec or less so as to prevent the water surface 21 a from waving.

Next, a cleaning method using the cleaning apparatus will be described. First, in the first cleaning processing unit 10, the semiconductor wafer W cleaned by the etching chemical solution 11 in the cleaning processing tank 12 for a predetermined time is gripped by the transfer arm 60 and taken out. Then, the semiconductor wafer W is moved to the second position by the transfer arm 60 in order to perform washing with water.
It is transported to the cleaning section 20.

At this time, about 23 liter / liter is supplied to the cleaning tank 22 of the second cleaning section 20 by driving the pump 25.
The pure water 21 is supplied at a flow rate of min and is adjusted to overflow from the opening 22a. This overflow state is maintained in order to drive out impurities such as particles existing in the cleaning tank 22 before washing the semiconductor wafer W with water.

Subsequently, the transfer arm 60 is lowered (transferred downward), and the semiconductor wafer W is immersed in the cleaning tank 22. Prior to the dipping operation, the transfer arm speed control mechanism is operated to set the transfer arm at a deceleration position lower than the other transfer speeds, and the descent speed of the transfer arm 60 during this dipping, that is, the descent speed of the semiconductor wafer W ( About 15)
The semiconductor wafer W is immersed in the cleaning bath 22 while maintaining the speed at mm / sec. As a result, the water surface 21a of the cleaning tank 22 is maintained in a calm state without being disturbed by the dipping operation of the semiconductor wafer W.

Then, the transfer arm 60 is lowered at the above-mentioned lowering speed so that all of the semiconductor wafers W are removed from the cleaning tank 2.
2 and is supported by the support member 28 in a state of being settled below the water surface 21a. Thereafter, maintaining this immersion state for a predetermined time,
Washing with pure water 21 is performed.

Thereafter, the transfer arm 60 is driven again to transfer the semiconductor wafer W upward to take it out, and the surface of the semiconductor wafer W is dried by a drying means (not shown) in the next step. The take-out speed (ascending speed) at this time does not need to be the same as the descending speed, and can be set to a desired speed.

When the semiconductor wafer W was cleaned by the above cleaning, as shown in FIGS. 2 (a) and 2 (b),
Compared to the conventional cleaning (FIG. 5), the amount of particles and the like adhering to both surfaces of the semiconductor wafer W was significantly reduced. As a result, the yield of semiconductor devices using the semiconductor wafer W is improved, functional reliability such as quality is improved, and high-density integration or miniaturization becomes possible.

In the embodiment described above, only the semiconductor wafer is used as the object to be cleaned. However, the present invention is not limited to this, and can be applied to other objects to be cleaned. Further, in this embodiment, the water washing process using pure water as the cleaning liquid has been described. However, the present invention is not limited to this and can be applied to other cleaning processes, wet etching processes, and the like.

[0051]

As described above, according to the cleaning apparatus and the cleaning method of the present invention, when the object to be cleaned is immersed in the cleaning tank, the supply of the cleaning liquid to the cleaning tank is stopped. Accordingly, the flow of the cleaning liquid in the cleaning processing tank, for example, the upward flow (upflow) stops, and the overflow stops. Therefore, the object to be cleaned can be immersed without causing the liquid level of the cleaning liquid in the cleaning tank to be wavy. Thereby, the amount of particles or the like remaining on the surface of the object to be cleaned can be significantly reduced, and the yield of, for example, a semiconductor device using the object to be cleaned is improved,
In addition, functional reliability such as quality is improved, and further, high-density integration or miniaturization becomes possible. In addition, when the object to be cleaned is immersed at a transport speed equal to or less than a predetermined value when the object to be cleaned is transported and immersed, the liquid surface of the cleaning tank is more reliably prevented from waving, and The body can be immersed, and the amount of particles and the like attached can be further reduced.

Further, according to the cleaning apparatus and the cleaning method of the present invention, when the object to be cleaned is immersed in the cleaning tank, the predetermined value is set so that the level of the cleaning liquid filled in the cleaning tank does not become wavy. Since the cleaning liquid is supplied at the following flow rate,
The flow of the cleaning liquid in the cleaning tank is suppressed, and the object to be cleaned can be immersed without causing the liquid level of the cleaning tank to undulate. As a result, the amount of particles or the like remaining on the surface of the object to be cleaned can be significantly reduced, the yield of, for example, semiconductor devices using the object to be cleaned is improved, and the reliability such as the quality is improved. Performance is improved, and high-density integration or miniaturization becomes possible. In addition, when the object to be cleaned is immersed at a transport speed equal to or less than a predetermined value when the object to be cleaned is transported and immersed, the liquid surface of the cleaning tank is more reliably prevented from waving, and The body can be immersed, the amount of particles attached can be further reduced, and a switching valve is adopted to adjust the flow rate of the cleaning liquid supplied to the cleaning tank.
With a simple structure, the flow rate can be easily and quickly switched.

Further, according to the cleaning apparatus and the cleaning method of the present invention, when the object to be cleaned is transported and immersed in the cleaning tank, the level of the cleaning liquid filled in the cleaning tank is not rippled. Since the object to be cleaned is immersed at a transport speed equal to or lower than a predetermined value, the object to be cleaned can be immersed without making the liquid level in the cleaning tank undulate. As a result, the amount of particles or the like remaining on the surface of the object to be cleaned can be significantly reduced, the yield of, for example, semiconductor devices using the object to be cleaned is improved, and the reliability such as the quality is improved. Performance is improved, and high-density integration or miniaturization becomes possible.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing a first embodiment of a cleaning apparatus and a cleaning method according to the present invention.

FIGS. 2A and 2B show states of adhesion of particles to a surface when a semiconductor wafer is washed with water using the cleaning apparatus and the cleaning method according to the first embodiment. is there.

FIG. 3 is a schematic configuration diagram illustrating a second embodiment of a cleaning apparatus and a cleaning method according to the present invention.

FIG. 4 is a schematic configuration diagram showing a third embodiment of a cleaning apparatus and a cleaning method according to the present invention.

FIG. 5 shows a state of adhesion of particles to a surface when a semiconductor wafer is washed with water by a conventional cleaning method.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 ... 1st cleaning processing part, 11 ... Etching chemical liquid, 12 ... Cleaning processing tank, 20 ... 2nd cleaning processing part, 21 ... Pure water (cleaning liquid), 21a ... Water surface (liquid surface), 22: cleaning tank, 22a: opening, 2
3 ... supply pipe (supply means), 25 ... pump (supply means), 26 ... outer peripheral tank, 27 ... discharge pipe, 28 ... support member, 30 ... transfer arm (conveyance) Means), 40: second cleaning section, 41: pure water (cleaning liquid), 41a: water surface (liquid level), 42: cleaning tank, 42a: opening, 43 · ..Supply pipe (supply means), 44 ... switching valve, 45 ... first
Branch pipe, 46 ... second branch pipe, 47 ... first pump, 48 ... second pump, 49 ... outer peripheral tank,
50 ... discharge pipe, 51 ... support member, 60 ...
A transfer arm (transfer means);

Claims (17)

[Claims] A cleaning tank filled with a cleaning liquid and formed so that the cleaning liquid can flow out of an upper opening;
Supply means for supplying a cleaning liquid to the cleaning processing tank,
A cleaning apparatus for immersing a body to be cleaned in the cleaning tank through the opening to clean a surface of the body to be cleaned, wherein the supply unit includes a cleaning liquid for immersing the body in the cleaning tank. A cleaning device, wherein the supply of water is stopped. 2. A cleaning device, comprising: transport means for transporting and immersing an object to be cleaned into the cleaning tank, wherein the transport means is provided with a predetermined cleaning liquid filled in the cleaning tank so that the surface of the cleaning liquid does not undulate. 2. The cleaning apparatus according to claim 1, wherein the object to be cleaned is immersed at a transport speed equal to or less than a value. 3. The cleaning apparatus according to claim 1, wherein said cleaning liquid is water, and said body to be cleaned has been previously cleaned with a chemical solution. 4. A cleaning tank filled with a cleaning liquid and formed so that the cleaning liquid can flow out of an upper opening;
Supply means for supplying a cleaning liquid to the cleaning processing tank,
A cleaning device for immersing the object to be cleaned in the cleaning tank from the opening to clean the surface of the object to be cleaned, wherein the supply unit is configured to immerse the object to be cleaned in the cleaning tank. Supply the cleaning liquid at a flow rate equal to or less than a predetermined value so that the liquid level of the cleaning liquid filled in the cleaning processing tank does not undulate,
A washing device characterized by the above-mentioned. 5. A cleaning device for transporting and immersing an object to be cleaned into the cleaning bath, wherein the transporting unit is provided with a predetermined cleaning liquid filled in the cleaning bath so that the surface of the cleaning liquid does not undulate. 5. The cleaning apparatus according to claim 4, wherein the object to be cleaned is immersed at a transport speed equal to or less than a value. 6. The supply means has a switching valve for switching a supply flow rate of a cleaning liquid, and one supply flow rate switched by the switching valve is a flow rate equal to or less than the predetermined value. 5. The cleaning device according to 4. 7. The cleaning apparatus according to claim 4, wherein said cleaning liquid is water, and said body to be cleaned has been previously cleaned with a chemical solution. 8. A cleaning tank filled with a cleaning liquid and formed so that the cleaning liquid can flow out from an upper opening;
Transport means for transporting the object to be cleaned, a cleaning device for transporting the object to be cleaned to the cleaning tank by the transport means and immersing the surface of the object to be cleaned, wherein the transport means, When transporting the object to be cleaned and immersing it in the cleaning tank, the object to be cleaned is immersed at a transport speed of a predetermined value or less so that the liquid level of the cleaning liquid filled in the cleaning tank does not undulate. And a cleaning device. 9. The cleaning apparatus according to claim 8, wherein said cleaning liquid is water, and said body to be cleaned has been previously cleaned with a chemical solution. 10. A cleaning method for immersing a body to be cleaned in a cleaning tank and cleaning the surface of the body with the cleaning liquid flowing out of an upper opening while supplying the cleaning liquid to the cleaning tank. Wherein the supply of the cleaning liquid to the cleaning tank is stopped when the object to be cleaned is immersed in the cleaning tank. 11. A transport speed when the object to be cleaned is immersed in the cleaning bath is set to a speed not more than a predetermined value so that the level of the cleaning liquid filled in the cleaning bath is not wavy.
The cleaning method according to claim 10, wherein: 12. The cleaning apparatus according to claim 10, wherein the object to be cleaned is preliminarily washed with a chemical solution, and then immersed in the cleaning tank and washed with water. 13. A cleaning method for immersing an object to be cleaned in a cleaning tank and cleaning the surface of the object to be cleaned while supplying the cleaning liquid to the cleaning tank and allowing the cleaning liquid to flow out from an upper opening. When the object to be cleaned is immersed in the cleaning tank, the cleaning liquid is supplied at a flow rate equal to or less than a predetermined value so that the surface of the cleaning liquid filled in the cleaning tank does not undulate. Characteristic cleaning method. 14. A transport speed when the object to be cleaned is immersed in the cleaning bath is set to a speed equal to or less than a predetermined value so that the level of the cleaning liquid filled in the cleaning bath is not wavy.
The cleaning method according to claim 13, wherein: 15. The cleaning apparatus according to claim 13, wherein the object to be cleaned is preliminarily cleaned with a chemical solution, and then immersed in the cleaning tank to be washed with water. 16. A cleaning method in which an object to be cleaned is immersed in a cleaning tank and the surface of the object is washed while the cleaning liquid is supplied from the upper opening while supplying the cleaning liquid to the cleaning tank. The transport speed when the object to be cleaned is immersed in the cleaning bath is set to a speed equal to or lower than a predetermined value so that the level of the cleaning liquid filled in the cleaning bath does not undulate. Characteristic cleaning method. 17. The cleaning apparatus according to claim 16, wherein the object to be cleaned is preliminarily cleaned with a chemical solution, and then immersed in the cleaning tank to be washed with water.