JP2000133629A - Substrate processor and its method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processor for suppressing the adhesion of particles on a substrate at the time of drying a substrate by using organic solvent. SOLUTION: A processing tank 20 for storing treatment liquid such as pure water, and for washing a substrate W is arranged inside an outer tank 10. When final washing with pure water is ended in the processing tank 20, pure water is jetted out of a jet nozzle 31 in a horizontal direction so that pure a water flow covering the surface of pure water stored in the processing tank 20 can be formed. Afterwards, IPA(isopropyl alcohol) stream is supplied from an IPA.N2 supply nozzle 50, and atmosphere including the steam of the IPA is formed at the upper part of the processing tank 20. Moreover, the substrate W is lifted up through the pure water flow to atmosphere including the stream of the IPA. At that time, the pure water flow acts as a barrier layer for preventing any contact of the IPA steam with the surface of the stored pure water so that the formation of any IPA layer on a vapor/liquid boundary face can be prevented, and the adhesion of any particle through the IPA layer can be suppressed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate, a glass substrate for a liquid crystal display, a glass substrate for a photomask, a substrate for an optical disk, and the like (hereinafter simply referred to as "substrate"). The present invention relates to a substrate processing apparatus and a substrate processing method for performing a drying process by moving a substrate into an atmosphere containing a vapor of an organic solvent.

[0002]

2. Description of the Related Art Conventionally, in a substrate manufacturing process, after a treatment with a chemical solution such as hydrofluoric acid and a cleaning treatment with pure water are sequentially performed, isopropyl alcohol (hereinafter referred to as “IPA”) is drawn out from the pure water. A substrate processing apparatus that performs a drying process by supplying a vapor of an organic solvent to the periphery of the substrate is used.

As such an apparatus, Japanese Patent Publication No. 6-10
There is one as disclosed in Japanese Patent No. 3686. FIG. 13 is a diagram showing a substrate processing apparatus disclosed in the publication.

[0004] A container 112 for holding a wafer for processing with the washing fluid and the dry steam of IPA is constituted by an upper wafer support container 118 and a lower wafer support container 120. A plurality of semiconductor wafers 116 are suspended in upper wafer support 118 and lower wafer support 120 in the form of two rows of parallel vertically oriented wafers.

The wafer support vessels 118 and 120 have an upper vessel clamp 122 connected to a fluid inlet 124 and a lower vessel clamp 12 connected to a fluid outlet 128.
6 is held at a predetermined position. In addition, valves for controlling various processing fluids flowing into and out of the container 112, for example, fluids for etching, stripping, cleaning and / or washing are provided outside the drawing.

[0006] In such a conventional apparatus, when processing a wafer, the container 112 is in a state of being hydraulically filled with a processing fluid. Container 1 even at the time of final washing
12 remains filled with the hot water of ultrapure water. And
After the final washing cycle, the valve outside the figure was opened and the IPA
Vapor flows into vessel 112 through fluid inlet 124. As the IPA vapor enters the vessel 112, the pure water flows out of the lower vessel clamp 126 through the fluid outlet 128 and the interface 134 descends.

At this time, in the container 112, the upper part is filled with the dry vapor 132 of IPA,
Below the liquid-solid interface 134, the washing liquid 1 of pure water is used.
30 have been satisfied. The IPA vapor is replaced with pure water from the semiconductor wafer 116 at the interface 134, and the pure water rinsing liquid 13 as the interface 134 descends.
Concentrate on top to form a dry fluid layer of IPA.

It is believed that it is important that the rate of descent of the gas-liquid-solid interface 134 be controlled at a relatively low rate. Specifically, it is preferable that the dry vapor 132 of the IPA replaces the washing liquid from the semiconductor wafer 116 at a rate such that substantially no droplets remain on the wafer surface after the replacement of the pure water with the IPA. This is because the droplets are
If the rinsing liquid 130 flows out of the container 112 too quickly to the extent that it remains on the semiconductor wafer 116, the droplets remaining on the semiconductor wafer 116 evaporate, causing contaminants.

When the rinsing liquid 130 has completely drained from the container 112 and the container 112 has been emptied, a dry, inert, non-condensable gas such as nitrogen is introduced and the I
Purge PA vapor. The nitrogen gas pushes the IPA vapor out of the container 112 and removes what appears to be IPA on the surface of the semiconductor wafer 116, thereby accomplishing the drying process of the semiconductor wafer 116.

As described above, Japanese Patent Publication No. 6-10368
In the apparatus disclosed in Japanese Patent Laid-Open Publication No. 6-62, a drying process is performed without contaminating the wafer surface.

[0011]

However, as described above, in the apparatus disclosed in Japanese Patent Publication No. 6-103686, the vapor of IPA condenses on the interface 134, and
It is clear that a dry fluid layer of PA is formed.

When a dry fluid layer of IPA is formed at the gas-liquid-solid interface 134, the etching residue partially remaining on the surface of the semiconductor wafer 116 is dissolved in the dry fluid layer of IPA, and the semiconductor is removed. It re-adheres to the wafer 116 or adheres as a new compound to the semiconductor wafer 116 or the like arranged opposite to the semiconductor wafer 116.
Then, the compound becomes particles adhering to the surface of the semiconductor wafer 116 as the interface 134 descends.

That is, the IPA formed at the interface 134
Particles are generated through the dry fluid layer of the semiconductor wafer, and adhere to the surface of the semiconductor wafer 116.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and provides a substrate processing apparatus and method capable of suppressing adhesion of particles to a substrate when the substrate is dried using an organic solvent. The purpose is to do.

[0015]

In order to solve the above-mentioned problems, the invention according to claim 1 is to move the substrate, which has been subjected to the immersion cleaning treatment with pure water, into an atmosphere containing the vapor of an organic solvent. A substrate processing apparatus that performs a drying process, (a) a pure water is stored, a processing tank that performs the immersion cleaning processing of the substrate, (b) an outer tank that houses the processing tank, and (c) the outer tank. An organic solvent atmosphere forming means for forming an atmosphere containing the vapor of the organic solvent in the tank; and (d) lifting the substrate after the immersion cleaning treatment from the treatment tank into an atmosphere containing the vapor of the organic solvent. Means, and (e) a liquid flow forming step of discharging a liquid above the processing tank and forming a liquid flow covering at least a region of the pure water stored in the processing tank where the substrate is pulled up by the lifting means. Means.

Further, the invention according to claim 2 is a substrate processing method for drying the substrate by moving the substrate, which has been subjected to the immersion cleaning processing with pure water, into an atmosphere containing vapor of an organic solvent, (a) a washing treatment step of performing the immersion washing treatment of the substrate in a treatment tank storing pure water, and (b)
A liquid flow forming step of discharging a liquid above the processing tank and forming a liquid flow covering at least a specific area of the surface of the pure water stored in the processing tank; An organic solvent atmosphere forming step of forming an atmosphere containing the vapor of the organic solvent in the tank, and (d) lifting the substrate after the immersion cleaning treatment from the treatment tank into an atmosphere containing the vapor of the organic solvent. And wherein the specific region is a region where the substrate is pulled up by the lifting means.

According to a third aspect of the present invention, in the substrate processing method according to the second aspect of the present invention, the formation of the liquid flow is started before an atmosphere containing the vapor of the organic solvent is formed.

[0018]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a front view of a substrate processing apparatus according to the present invention, and FIG. 2 is a plan view of the substrate processing apparatus. In FIG. 1 and each of the following drawings, an XYZ orthogonal coordinate system is appropriately attached in order to clarify the directional relationship.

In the substrate processing apparatus according to the present invention, the outer tank 10
, Processing tank 20, pure water discharge mechanism 30, lifting mechanism 40
And an IPA · N ₂ supply nozzle 50.

The treatment tank 20 is a tank for storing a chemical solution such as hydrofluoric acid or pure water (hereinafter, these are collectively referred to as “treatment liquid”) and sequentially performing surface treatment on the substrate. Housed inside. A processing liquid can be supplied to the processing tank 20 from a processing liquid supply source (not shown) via a supply pipe 25. The processing liquid is supplied from the bottom of the processing tank 20 and overflows from the upper part of the processing tank 20.

The elevating mechanism 40 is a mechanism for immersing a plurality of substrates W in the processing liquid stored in the processing tank 20. The lifting mechanism 40 includes a lifter 41 and a lifter arm 42.
And three holding units 43, 44, and 45 for holding the substrate W. In each of the three holding portions 43, 44, and 45, a plurality of holding grooves into which the outer edge of the substrate W fits and holds the substrate W in an upright posture are provided at predetermined intervals in the X direction. I have. Each holding groove is a notch-shaped groove formed along the Y direction. Three holding parts 43,
44 and 45 are fixed to the lifter arm 42, and the lifter arm 42 is moved vertically (Z direction) by the lifter 41.
It is provided to be able to move up and down.

With such a configuration, the lifting mechanism 40 is
A position (solid line position in FIG. 1) in which the plurality of substrates W arranged and held in parallel with each other in the X direction by the book holding units 43, 44, and 45 are immersed in the processing liquid stored in the processing tank 20. It can be moved up and down between the position (the position indicated by the two-dot chain line in FIG. 1) pulled up from the processing liquid. The lifter 41 may employ various mechanisms such as a feed screw mechanism using a ball screw and a belt mechanism using a pulley and a belt as a mechanism for moving the lifter arm 42 up and down. A slide-type opening / closing mechanism (not shown) is provided above the outer tank 10 so that the lifting mechanism 40 can transfer the substrate W to and from the substrate transfer robot outside the apparatus at the position indicated by the two-dot chain line in FIG. I have.

The pure water discharge mechanism 30 is provided inside each of the two side walls 10 a in the outer tank 10.
Is a mechanism that discharges pure water to the upper side. Pure water discharge mechanism 30
Has a discharge nozzle 31 and a waterproof plate 39. As shown in FIG. 1, the discharge nozzles 31 are provided above the height position of the upper end of the processing tank 20 and provided on each of both sides of the plurality of substrates W being lifted by the lifting mechanism 40. I have. Each of the discharge nozzles 31 has X
It is a hollow tubular member extending in the direction, and has a plurality of discharge holes 31a arranged at equal intervals in the X direction.
Each of the discharge nozzles 31 has a plurality of discharge holes 3.
1a, pure water is discharged above the processing tank 20 and the processing tank 20 is discharged.
A pure water flow can be formed that covers at least the region where the plurality of substrates W are pulled up by the elevating mechanism 40 from the surface of the pure water stored in the storage device. The waterproof plate 39 is a curved plate extending along the X direction, and is provided so as to cover the upper portions of the two discharge nozzles 31. In FIG. 2, the waterproof plate 39 is shown for convenience of illustration.
Is omitted.

Further, as shown in FIG.
Is supplied with pure water via a pipe 36 from a pure water supply source 35 provided outside the outer tank 10. The supplied pure water is discharged in one direction from each of the plurality of discharge holes 31a to form a one-way pure water flow. The discharge mode of the pure water by the discharge nozzle 31 will be further described later.

The IPA / N ₂ supply nozzle 50 is connected to the outer tank 10.
These nozzles are provided outside the two inner side walls 10a and form an atmosphere containing IPA vapor in the outer tank 10. Each of the IPA / N ₂ supply nozzles 50 is a hollow tubular member extending along the X direction, and includes a plurality of discharge holes 50a arranged at equal intervals in the X direction. Further, IPA vapor is supplied to each of the IPA / N ₂ supply nozzles 50 from a IPA supply source 55 provided outside the outer tank 10 via a pipe 56. And
The supplied IPA vapor is supplied into the outer tank 10 upward (in the + Z direction) from the plurality of discharge holes 50a. As shown in FIG.
The upper part of a is open and the IPA / N ₂ supply nozzle 5 is opened.
In this case, the IPA vapor supplied from each of the nozzles 0 passes above the side wall 10a, reaches the upper part of the processing tank 20, and eventually forms an IPA atmosphere above the processing tank 20.

The IPA / N ₂ supply nozzle 50 is also connected to a nitrogen supply source 59 to supply only nitrogen gas into the outer tank 10 and to supply a mixed gas of IPA and nitrogen to the outer tank 10. Can be supplied. Therefore, IPA
The IPA is supplied into the outer tank 10 by the N ₂ supply nozzle 50.
An atmosphere, a nitrogen atmosphere, or an IPA / nitrogen mixed atmosphere can be selectively formed. The “atmosphere containing IPA vapor” includes both an IPA atmosphere and an IPA / nitrogen mixed atmosphere.

In this embodiment, the IPA / N ₂ supply nozzle 50 corresponds to an organic solvent atmosphere forming means, the discharge nozzle 31 corresponds to a liquid flow forming means, and the elevating mechanism 40 corresponds to a lifting means.

Next, a processing procedure in the above-described substrate processing apparatus will be described with reference to FIGS. FIG.
To 9 are views for explaining a state of processing in the substrate processing apparatus.

When performing processing on a substrate W in the substrate processing apparatus, first, the elevating mechanism 40 receives a plurality of substrates W from a substrate transfer robot (not shown). Then, as shown in FIG. 3, the outer tub 10 is sealed, and the elevating mechanism 40
The substrates W held parallel to each other in the X direction are lowered and immersed in pure water stored in the processing tank 20. At this stage, the pure water is continuously supplied from the supply pipe 25 to the processing tank 20, and the pure water continues to overflow from the upper end of the processing tank 20. Pure water overflowing from the processing tank 20 falls into the outer tank 10 and is collected, and is discharged to a waste liquid line outside the apparatus. Further, nitrogen gas is supplied from the IPA / N ₂ supply nozzle 50, and the inside of the outer tank 10 is set to a nitrogen atmosphere. Note that pure water is not discharged from the discharge nozzle 31.

Next, while maintaining a state in which the plurality of substrates W are immersed in the pure water stored in the processing tank 20, etching or cleaning is performed by sequentially supplying a chemical solution or pure water from the supply pipe 25 to the processing tank 20. The process proceeds in a predetermined order (the state of FIG. 4). At this stage, the chemical solution or pure water continues to overflow from the upper end of the processing tank 20,
The overflowed processing liquid falls into the outer tank 10 and is collected. It is to be noted that nitrogen gas is supplied from the IPA / N ₂ supply nozzle 50, that the inside of the outer tank 10 is in a nitrogen atmosphere, and that pure water is not discharged from the discharge nozzle 31 in the same manner as described above. .

As the surface treatment of the substrate W progresses, a final finish cleaning process is reached. In the present embodiment, the finish cleaning process is also performed by switching the supply of the processing liquid from the supply pipe 25 to pure water and replacing the inside of the processing tank 20 with pure water, similarly to the normal cleaning process. Then, as shown in FIG. 5, before the immersion processing in the processing tank 20 is completed and the lifting mechanism 40 lifts the substrate W from the pure water, the discharge nozzle 3
The discharge of pure water from 1 is started.

As described above, the discharge nozzle 31 has the plurality of discharge holes 31a arranged at equal intervals in the X direction, and pure water is discharged in one direction from each of the plurality of discharge holes 31a. Form a unidirectional flow of pure water. Here, each of the plurality of discharge holes 31a is provided in the horizontal direction, and the plurality of pure water flows from the discharge nozzle 31
It will be formed along the horizontal direction parallel to the water surface in 0.

The interval at which the plurality of ejection holes 31a are arranged is equal to the interval between the holding grooves provided in the holding portions 43, 44, and 45, that is, the interval between the arrangement of the substrates W to be held. Further, the plurality of ejection holes 31a are provided in the same number as the substrate W to be held, and each of them is provided in a direction parallel to the main surface of the substrate W. Accordingly, the plurality of pure water flows from the discharge nozzles 31 are formed at equal intervals in the arrangement direction in a direction parallel to the main surface of the substrate W. In other words, each of the plurality of held substrates W A pure water flow is formed along the main surface. The position where the plurality of ejection holes 31a are provided is as follows.
Each of the plurality of pure water flows is formed between adjacent substrates W.

With the configuration of the discharge nozzle 31 as described above, a plurality of one-way pure water flows from the discharge nozzle 31 end up in a horizontal direction and a direction parallel to the main surface of the substrate W (ie, Y direction).
In the (axial direction), the substrates W are formed at equal intervals to the arrangement intervals at which the substrates W are held. Therefore, each of the discharge nozzles 31 forms a pure water flow that covers at least a region where the plurality of substrates W can be lifted by the elevating mechanism 40 on the surface of the pure water stored in the processing tank 20.

After the pure water flow covering the surface of the pure water stored in the treatment tank 20 is formed, the IPA vapor is supplied from the IPA / N ₂ supply nozzle 50 for a predetermined time as shown in FIG. The supplied atmosphere forms an atmosphere containing IPA vapor in the outer tank 10. At this time, an atmosphere containing IPA vapor is also formed above the processing tank 20. In addition, IP
A mixed gas of IPA and nitrogen may be supplied from the A · N ₂ supply nozzle 50.

After the atmosphere containing the IPA vapor is formed above the processing tank 20, as shown in FIG.
Moves the plurality of substrates W through the pure water flow from the discharge nozzle 31 while lifting the plurality of substrates W from the pure water in the processing tank 20, and further moves the substrates W to an atmosphere containing IPA vapor. FIG. 10 is a plan view schematically showing a state where the substrate W is passed through a pure water flow from the discharge nozzle 31. In the present embodiment, the plurality of ejection holes 31a provided in the ejection nozzles 31 arranged on both sides of the plurality of substrates W being lifted are opposed to each other because the plurality of ejection holes 31a are opposed to each other. Pure water is discharged from the discharge nozzles 31 on both sides between the substrates W. The pure water discharged from each discharge nozzle 31 is supplied to the substrate W
Are prevented from scattering by a waterproof plate 39 provided on the opposite side with respect to. During the lifting process, the IPA / N ₂ supply nozzle 50 continues to supply IPA vapor.

At a point when the lower end of the substrate W has passed the surface of the pure water stored in the processing tank 20, as shown in FIG.
The discharge of pure water from the discharge nozzle 31 is stopped. When the discharge of pure water from the discharge nozzle 31 is stopped, the IPA · N
_The IPA vapor is continuously supplied from the _two supply nozzles 50. The entire substrate W is exposed to an atmosphere containing IPA vapor, and the surface of the substrate W is exposed to IPA.
The vapor condenses and displaces the water droplets adhering to the surface.

Thereafter, when the substrate W reaches the position indicated by the two-dot chain line in FIG. 1, the lifting of the substrate W is completed. At this point, as shown in FIG. 9, the outer tub 10 by the nitrogen gas is supplied for a predetermined time after IPA · N ₂ supply nozzle 50
The inside atmosphere is a nitrogen atmosphere. Further, the supply of pure water from the supply pipe 25 is stopped, and the pure water stored in the processing tank 20 is rapidly drained by a rapid discharge mechanism (not shown). Thereafter, the IPA condensed on the surface of the substrate W is completely dried by setting the inside of the outer tank 10 to a reduced-pressure atmosphere. The substrate W after the drying under reduced pressure is transferred to the substrate transfer robot, and a series of processes is completed. The substrate W
If the cleanliness of the substrate W is not sufficient at the time when the substrate W is lifted, pure water is stored again in the processing tank 20 and the process described with reference to FIGS. ) Can be repeated.

As described above, before the atmosphere containing the IPA vapor is formed above the processing tank 20, the discharge of the pure water from the discharge nozzle 31 is started, and the surface of the pure water stored in the processing tank 20 is discharged. Among them, a pure water flow is formed which covers at least a region where the plurality of substrates W are lifted by the lifting mechanism 40. This means that the pure water flow from the discharge nozzle 31 plays a role as a barrier layer that prevents the atmosphere containing the IPA vapor from coming into contact with the surface of the pure water stored in the processing tank 20.

FIG. 12 is a view conceptually showing how the pure water flow from the discharge nozzle 31 becomes a barrier layer. A barrier layer BL covering at least a region where the plurality of substrates W can be lifted by the lifting mechanism 40 among the surfaces of the pure water stored in the processing tank 20 by the plurality of pure water flows from the discharge nozzles 31.
Is formed, and the barrier layer BL prevents the atmosphere IA containing the IPA vapor from reaching the surface of the pure water stored in the processing tank 20.

Therefore, at least in the region where the substrate W passes, the IPA vapor does not dissolve in the pure water stored in the processing tank 20 and condenses on the gas-liquid interface. A layer is prevented from forming. As a result, particles are prevented from adhering to the surface of the substrate W via the IPA layer formed at the gas-liquid interface.

The passing of the substrate W being lifted from the processing tank 20 through the pure water flow from the discharge nozzle 31 is performed by using pure water having a higher purity than the pure water stored in the processing tank 20. Since the entire substrate W is cleaned, the cleanliness of the lifted and cleaned substrate W can be increased. At this time, as shown in FIG. 10, since pure water is discharged from both sides of the plurality of substrates W being lifted, the entire substrate W can be uniformly and efficiently cleaned.

Further, by forming the pure water flow from the discharge nozzle 31 along the horizontal direction, the pure water flows along the holding grooves of the holding portions 43, 44, and 45 for holding the substrate W. The cleaning efficiency of the cleaning can be increased.

Further, the discharge nozzle 3 is provided by the waterproof plate 39.
Since the scattering of the pure water discharged from 1 is prevented, there is no possibility that the scattered water droplets containing the contaminants adhere to the cleaned substrate W and contaminate the substrate W.

Although the embodiment of the present invention has been described above, the present invention is not limited to the above-described example.
For example, in the above-described embodiment, the pure water is discharged from the discharge nozzles 31 disposed on both sides of the plurality of substrates W being lifted in a form as shown in FIG. 10. The form shown in FIG. 11 may be used. That is, the plurality of discharge holes 3 provided in the discharge nozzle 31
1a is twice the arrangement interval of the substrates W, and the positions of the plurality of ejection holes 31a in each of the ejection nozzles 31 on both sides are set to the arrangement interval of the substrates W (1/1 of the installation interval of the ejection holes 31a).
The positions are shifted from each other only by 2). Any one of the discharge nozzles 31 is provided between the adjacent substrates W.
, The pure water is discharged from the Even if you do this,
The same effect as the above embodiment can be obtained.

The discharge of the pure water is performed by a plurality of discharge holes 31a.
However, the present invention is not limited to this, and may be performed from one slit-shaped discharge hole to form a curtain-shaped pure water flow.

In the above-described embodiment, a one-way pure water flow is formed from the discharge nozzle 31. However, a plurality of substrates W are formed by at least the elevating mechanism 40 on the surface of the pure water stored in the processing tank 20. As long as it becomes a barrier layer BL that covers the region where the water can be lifted, a mode in which pure water vapor or mist is discharged from the discharge nozzle 31 may be used.

Further, pure water may be discharged from the discharge nozzle 31 above the processing bath 20 to form a pure water flow covering the entire surface of the pure water stored in the processing bath 20. This method enhances the function of the pure water flow barrier layer BL, and is preferable from the viewpoint of preventing the formation of the IPA layer at the gas-liquid interface, but increases the consumption of pure water.

The formation of the pure water flow from the discharge nozzle 31 may be performed after the atmosphere containing the IPA vapor is formed before the substrate W is pulled up. However, as in the above embodiment, performing before the atmosphere containing the IPA vapor is formed more effectively prevents contact between the atmosphere containing the IPA vapor and the surface of the pure water stored in the processing tank 20. can do.

The liquid discharged from the discharge nozzle 31 is not limited to pure water, but may be another liquid such as an organic solvent as long as it functions as the barrier layer BL.

Further, in the above-described embodiment, a so-called one-bath processing apparatus is used, in which one processing tank performs both processing of a chemical solution and cleaning processing with pure water. A so-called multi-tank type processing apparatus in which chemical solution processing and pure water cleaning processing are performed in different processing tanks is also applicable. When applied to a multi-tank type processing apparatus, it is generally effective to apply it to the final finishing washing tank.

[0053]

As described above, according to the first and second aspects of the present invention, the liquid is discharged above the processing tank, and at least the surface of the pure water stored in the processing tank is lifted by the lifting means. Since the liquid flow forms an area where the substrate is lifted, the liquid flow functions as a barrier layer that prevents contact between the atmosphere containing the organic solvent vapor and the surface of the pure water stored in the processing tank. An organic solvent layer can be prevented from being formed at the interface, and particle adhesion to the substrate via the organic solvent layer can be suppressed.

According to the third aspect of the present invention, since the formation of the liquid flow is started before the formation of the atmosphere containing the vapor of the organic solvent, the liquid flow is stored in the treatment tank with the atmosphere containing the vapor of the organic solvent. The contact with the pure water surface can be more effectively prevented.

[Brief description of the drawings]

FIG. 1 is a front view of a substrate processing apparatus according to the present invention.

FIG. 2 is a plan view of the substrate processing apparatus of FIG.

FIG. 3 is a diagram illustrating a state of processing in the substrate processing apparatus of FIG. 1;

FIG. 4 is a diagram illustrating a state of processing in the substrate processing apparatus of FIG. 1;

FIG. 5 is a diagram illustrating a state of processing in the substrate processing apparatus of FIG. 1;

FIG. 6 is a diagram illustrating a state of processing in the substrate processing apparatus of FIG. 1;

FIG. 7 is a diagram illustrating a state of processing in the substrate processing apparatus of FIG. 1;

FIG. 8 is a diagram illustrating a state of processing in the substrate processing apparatus of FIG. 1;

FIG. 9 is a diagram illustrating a state of processing in the substrate processing apparatus of FIG. 1;

FIG. 10 is a plan view schematically showing a state where the substrate is passed through a pure water flow from a discharge nozzle.

FIG. 11 is a plan view schematically showing another example when passing a substrate through a pure water flow from a discharge nozzle.

FIG. 12 is a diagram conceptually showing a state in which a pure water flow from a discharge nozzle becomes a barrier layer.

FIG. 13 is a view showing a conventional substrate processing apparatus.

[Explanation of symbols]

10 outer tub 20 treatment tank 30 DI water discharge mechanism 31 discharge nozzle 40 lift mechanism 50 IPA · N ₂ supply nozzle W substrate

Claims (3)

[Claims] 1. A substrate processing apparatus for performing a drying process on a substrate by moving a substrate, which has been subjected to immersion cleaning processing with pure water, into an atmosphere containing vapor of an organic solvent, wherein (a) storing pure water A treatment tank for performing the immersion cleaning treatment of the substrate; (b) an outer tank containing the treatment tank; and (c) an organic solvent atmosphere forming an atmosphere containing the vapor of the organic solvent in the outer tank. Means, (d) lifting means for lifting the substrate after the immersion cleaning processing from the processing tank into an atmosphere containing the vapor of the organic solvent, (e) discharging a liquid above the processing tank, A substrate processing apparatus, comprising: a liquid flow forming means for forming a liquid flow covering at least a region where the substrate is lifted by the lifting means on the surface of pure water stored in the processing tank. 2. A substrate processing method for drying a substrate by moving a substrate, which has been subjected to immersion cleaning processing with pure water, into an atmosphere containing vapor of an organic solvent, wherein: (a) storing pure water; A washing treatment step of performing the immersion washing treatment of the substrate in the treated treatment tank, (b) discharging a liquid above the treatment tank, and at least a specific region of the surface of the pure water stored in the treatment tank. A liquid flow forming step of forming a liquid flow to cover, (c) an organic solvent atmosphere forming step of forming an atmosphere containing the vapor of the organic solvent in an outer tank accommodating the processing tank, and (d) the immersion cleaning processing. Withdrawing the completed substrate from the processing tank into an atmosphere containing the vapor of the organic solvent, wherein the specific region is a region where the substrate is pulled up by the lifting means. Substrate processing Method. 3. The substrate processing method according to claim 2, wherein the formation of the liquid flow is started before forming an atmosphere containing a vapor of the organic solvent.