JPS56124238A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56124238A
JPS56124238A JP2661780A JP2661780A JPS56124238A JP S56124238 A JPS56124238 A JP S56124238A JP 2661780 A JP2661780 A JP 2661780A JP 2661780 A JP2661780 A JP 2661780A JP S56124238 A JPS56124238 A JP S56124238A
Authority
JP
Japan
Prior art keywords
electrode
pressure
layer
film
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2661780A
Other languages
Japanese (ja)
Other versions
JPS6226582B2 (en
Inventor
Tsutomu Yao
Takahiro Nagano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2661780A priority Critical patent/JPS56124238A/en
Publication of JPS56124238A publication Critical patent/JPS56124238A/en
Publication of JPS6226582B2 publication Critical patent/JPS6226582B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0101—Neon [Ne]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To prevent the deformation caused by the creeping of the electrode film in a compressed type semiconductor device by a method wherein the inharmoniousness of the pressure welding strength between the electrode members to be pressure-welded for a wide area and the pressure welding strength between the electrode members to be pressure-welded on a narrow area is removed. CONSTITUTION:An n<+> layer 211 is formed by performing a P-diffusion from one side and a pB layer 13 and a pB 11 layer are formed simultaneously by performing a Ga-diffusion from both sides using an n type Si substrate 1 as base. Then, an nE layer 14 and an n<+> layer 214 are formed simultaneously by performing a B-diffusion from one side and subsequently, the concaved section to be used for a gate electrode 3 is formed by performing an etching. Then, an anode 5 is soldered using an Au-Sb alloy, an Al cathode 2, the gate electrode 3 and a film 22 are provided, and in between them an SiO2 film is covered. An electrode 2 and the film 22 are connected by placing a W buffer plate 4 on them, a Cu electrode is contacted to the W plate 4 and an electrode 5 and the pressure of approximately 1,000kg is applied. This pressure is applied not only to the cathode 2, but also to the metal film 22 having the same height and the pressure per unit are is decreased, thereby enabling to prevent the deformation caused by the creeping of the Al cathode 2 and to obtain an excellent electrical and thermal contact.
JP2661780A 1980-03-05 1980-03-05 Semiconductor device Granted JPS56124238A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2661780A JPS56124238A (en) 1980-03-05 1980-03-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2661780A JPS56124238A (en) 1980-03-05 1980-03-05 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56124238A true JPS56124238A (en) 1981-09-29
JPS6226582B2 JPS6226582B2 (en) 1987-06-09

Family

ID=12198437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2661780A Granted JPS56124238A (en) 1980-03-05 1980-03-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56124238A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184565A (en) * 1983-03-31 1984-10-19 ベ−・ベ−・ツエ−・アクチエンゲゼルシヤフト・ブラウン・ボヴエリ・ウント・コンパニイ Power semiconductor structure element and method of producing same
JPS6337660A (en) * 1986-07-30 1988-02-18 ビ−ビ−シ−　ブラウン　ボヴエリ　アクチエンゲゼルシヤフト Pressurized contact type gto thyristor
JPH0457370A (en) * 1990-06-27 1992-02-25 Toyo Electric Mfg Co Ltd Electrostatic inductive semiconductor element suited to pressure-welded package structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184565A (en) * 1983-03-31 1984-10-19 ベ−・ベ−・ツエ−・アクチエンゲゼルシヤフト・ブラウン・ボヴエリ・ウント・コンパニイ Power semiconductor structure element and method of producing same
JPS6337660A (en) * 1986-07-30 1988-02-18 ビ−ビ−シ−　ブラウン　ボヴエリ　アクチエンゲゼルシヤフト Pressurized contact type gto thyristor
JPH0457370A (en) * 1990-06-27 1992-02-25 Toyo Electric Mfg Co Ltd Electrostatic inductive semiconductor element suited to pressure-welded package structure

Also Published As

Publication number Publication date
JPS6226582B2 (en) 1987-06-09

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