JPS5734343A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5734343A
JPS5734343A JP11050280A JP11050280A JPS5734343A JP S5734343 A JPS5734343 A JP S5734343A JP 11050280 A JP11050280 A JP 11050280A JP 11050280 A JP11050280 A JP 11050280A JP S5734343 A JPS5734343 A JP S5734343A
Authority
JP
Japan
Prior art keywords
layer
plate
wafer
thick
sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11050280A
Other languages
Japanese (ja)
Other versions
JPS5932896B2 (en
Inventor
Kazuo Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55110502A priority Critical patent/JPS5932896B2/en
Publication of JPS5734343A publication Critical patent/JPS5734343A/en
Publication of JPS5932896B2 publication Critical patent/JPS5932896B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01045—Rhodium [Rh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To prevent alloying of Al and Mo in a large power capacity device and to improve reliability, by pressure welding an Al-layer formed on a semiconductor substrate and a Rh-layer provided through a metal layer such as Ag on an Mo plate to make it into an electrode. CONSTITUTION:For instance, in a rectifying device with a large aperture, an Mo plate 3 is bonded to one side (an Al-layer) of an Si wafer 1, wherein on both sides Al-layer 2 and 4 are formed, by soldering. With the other surface (an Al-layer 2) of said wafer 1 a Rh-layer 10, which is 0.05-0.8mum thick and plated on the 0.1- 0.3mm. thick Mo plate through an Ag-layer or an Ni-layer, is contacted to be made into a device of pressure welding and holding by being between the cupper block electrodes 6 and 7 and pressed from both sides. Thereby, the Mo plate 9 and the Al-layer 4 are alloyed due to the expansion and contraction when turning ON electricity preventing the generation of cracks on the wafer 1 and the fluctuation of power loss to highten the reliability of the device.
JP55110502A 1980-08-09 1980-08-09 semiconductor equipment Expired JPS5932896B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55110502A JPS5932896B2 (en) 1980-08-09 1980-08-09 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55110502A JPS5932896B2 (en) 1980-08-09 1980-08-09 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5734343A true JPS5734343A (en) 1982-02-24
JPS5932896B2 JPS5932896B2 (en) 1984-08-11

Family

ID=14537384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55110502A Expired JPS5932896B2 (en) 1980-08-09 1980-08-09 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5932896B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931035A (en) * 1982-08-12 1984-02-18 Mitsubishi Electric Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931035A (en) * 1982-08-12 1984-02-18 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5932896B2 (en) 1984-08-11

Similar Documents

Publication Publication Date Title
JPS5734343A (en) Semiconductor device
GB1529857A (en) Semiconductors
JPS5784157A (en) Resin seal type semiconductor device
JPS6442135A (en) Semiconductor device
JPS62128571A (en) Amorphous silicon solar battery
JPS56101752A (en) Semiconductor device
JPS5598835A (en) Pressure-welded semiconductor device
JPS56167352A (en) Pressure-welding type semiconductor device
JPS5694785A (en) Solar battery device
JPS5726450A (en) Back surface electrode structure for semiconductor integrated circuit device
JPS57114242A (en) Semiconductor device
JPS54146960A (en) Semiconductor device
JPS56110230A (en) Forming method of electrode on semiconductor device
JPS5736846A (en) Metallic package for semiconductor element
GB1086830A (en) Semiconductor devices
JPS5778144A (en) Semiconductor device
JPS5552227A (en) Semiconductor electrode structure
JPS5610941A (en) Semiconductor device
JPS5679439A (en) Semiconductor device
CH427045A (en) Semiconductor component
JPS5775456A (en) Semiconductor device
JPS55158291A (en) Edge part structure of anode lead plate
JPS56160046A (en) Manufacture of semiconductor device
JPS57120352A (en) Semiconductor device
JPS5791546A (en) Manufacture of glass sealed semiconductor device