JPS5791546A - Manufacture of glass sealed semiconductor device - Google Patents

Manufacture of glass sealed semiconductor device

Info

Publication number
JPS5791546A
JPS5791546A JP55167722A JP16772280A JPS5791546A JP S5791546 A JPS5791546 A JP S5791546A JP 55167722 A JP55167722 A JP 55167722A JP 16772280 A JP16772280 A JP 16772280A JP S5791546 A JPS5791546 A JP S5791546A
Authority
JP
Japan
Prior art keywords
base material
soldered
crack
diode
glass sealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55167722A
Other languages
Japanese (ja)
Inventor
Hisanori Muramatsu
Shigeru Miyagawa
Tamio Omori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Components Co Ltd
Original Assignee
Toshiba Corp
Toshiba Components Co Ltd
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Components Co Ltd, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55167722A priority Critical patent/JPS5791546A/en
Priority to GB8134764A priority patent/GB2089124B/en
Priority to KR1019810004514A priority patent/KR860000507B1/en
Publication of JPS5791546A publication Critical patent/JPS5791546A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Abstract

PURPOSE:To prevent the production of void by employing a metal foil as a metal for electrode material, thereby preventing the crack of an element base material and eliminating a stepwise difference between the electrode material and a semiconductor element. CONSTITUTION:Silicon wafers 11a-11m having P-N junctions are laminated to form an element base material 11, and the nonplated surface of molybdenum foil 12 placed with nickel on one side in a thickness of 100mum are soldered on both upper and lower surfaces of the material 11 with aluminum soldering. Then, the material 11 is cut in a thicknesswise direction by dry honing to form cylindrical diode elements 13. Leads 16 of copper wires are soldered with low melting point solder to the electrode member 14 of a diode element 13, and a glass layer 15 is formed thereon, and a glass sealed high withstand voltage diode is completed. Thus, the problems caused by the crack and stepwise difference of the base material can be eliminated.
JP55167722A 1980-11-28 1980-11-28 Manufacture of glass sealed semiconductor device Pending JPS5791546A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP55167722A JPS5791546A (en) 1980-11-28 1980-11-28 Manufacture of glass sealed semiconductor device
GB8134764A GB2089124B (en) 1980-11-28 1981-11-18 Production of sealed semiconductor device
KR1019810004514A KR860000507B1 (en) 1980-11-28 1981-11-21 Semiconductor apparatus and manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55167722A JPS5791546A (en) 1980-11-28 1980-11-28 Manufacture of glass sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPS5791546A true JPS5791546A (en) 1982-06-07

Family

ID=15854958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55167722A Pending JPS5791546A (en) 1980-11-28 1980-11-28 Manufacture of glass sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPS5791546A (en)

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