GB1086830A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1086830A
GB1086830A GB4260465A GB4260465A GB1086830A GB 1086830 A GB1086830 A GB 1086830A GB 4260465 A GB4260465 A GB 4260465A GB 4260465 A GB4260465 A GB 4260465A GB 1086830 A GB1086830 A GB 1086830A
Authority
GB
United Kingdom
Prior art keywords
wafer
layer
pedestal
fused
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4260465A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB1086830A publication Critical patent/GB1086830A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
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    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/01027—Cobalt [Co]
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01033—Arsenic [As]
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    • H01L2924/01042—Molybdenum [Mo]
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    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
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    • H01L2924/01051—Antimony [Sb]
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    • H01L2924/01074—Tungsten [W]
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    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
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    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
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    • H01L2924/0133—Ternary Alloys
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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

1,086,830. Semi-conductor devices. WESTINGHOUSE ELECTRIC CORPORATION. Oct. 7, 1965 [Oct. 28, 1964], No. 42604/65. Heading H1K. A semi-conductor wafer having flat metallic layers fused to its opposite faces is placed on a flat metallic layer bonded to a pedestal forming an electrode connector, and a second electrode connector is placed in contact with the metallic layer on the other face of the wafer. The device structure contains means applying pressure to the assembly so that cold fusion bonds are formed between contacting surfaces not previously bonded. The bond between the wafer and the pedestal may be facilitated by the introduction of a suitable foil between the metallic layers on the wafer and pedestal or by the plating on to or fixing on to the metallic layer on the wafer of a suitable material. The device may be a rectifier of the two, three or four-layer type. The embodiments described are NPNP controlled rectifiers. In each of these the semi-conductor wafer is mounted on a copper, brass, or aluminium pedestal 11 to which the cover of the housing is welded and which forms the anode of the rectifier. The cathode is formed by a metallic washer 40 bonded to the tubular connector 38. Spring washers 44, 46 bear on an insulating washer 41 resting on the cathode washer and are compressed by a cap 50 screwed on to the pedestal to provide the pressure necessary to form the cold-fusion bonds. In each of the three embodiments the cathode region 18 is formed by alloying a gold-antimony foil to a silicon wafer 14 whose edge surface 22 has been tapered by etching to increase the surface leakage path, and the gate contact 20 is formed by alloying gold-boron to the wafer; the electrode pedestal 11 is plated with a silver layer 10. In one embodiment the layer fused to the anode side of the wafer is of gold-boron-bismuth alloy. Cold-fusion between this layer and the silver layer 10 may be enhanced if desired by placing a silver foil between them. In another embodiment, an aluminium layer is fused to the wafer and is provided with a plated-on or fused silver layer.
GB4260465A 1964-10-28 1965-10-07 Semiconductor devices Expired GB1086830A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US40701364A 1964-10-28 1964-10-28

Publications (1)

Publication Number Publication Date
GB1086830A true GB1086830A (en) 1967-10-11

Family

ID=23610251

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4260465A Expired GB1086830A (en) 1964-10-28 1965-10-07 Semiconductor devices

Country Status (4)

Country Link
BE (1) BE671436A (en)
CH (1) CH447387A (en)
DE (1) DE1539092A1 (en)
GB (1) GB1086830A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10186734B2 (en) 2014-05-23 2019-01-22 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Device and method for bridging an electrical energy storage

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3542838A1 (en) * 1985-12-04 1987-06-11 Bbc Brown Boveri & Cie Bypass element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10186734B2 (en) 2014-05-23 2019-01-22 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Device and method for bridging an electrical energy storage

Also Published As

Publication number Publication date
CH447387A (en) 1967-11-30
DE1539092A1 (en) 1970-04-23
BE671436A (en) 1966-02-14

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