JPS5534423A - Method of inspecting semiconductor wafer - Google Patents

Method of inspecting semiconductor wafer

Info

Publication number
JPS5534423A
JPS5534423A JP10638878A JP10638878A JPS5534423A JP S5534423 A JPS5534423 A JP S5534423A JP 10638878 A JP10638878 A JP 10638878A JP 10638878 A JP10638878 A JP 10638878A JP S5534423 A JPS5534423 A JP S5534423A
Authority
JP
Japan
Prior art keywords
stripe
radiate
adhere
caused
infrared ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10638878A
Other languages
Japanese (ja)
Inventor
Seiji Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10638878A priority Critical patent/JPS5534423A/en
Publication of JPS5534423A publication Critical patent/JPS5534423A/en
Pending legal-status Critical Current

Links

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To provide the subject method comprising the steps of: forming ohmic electrodes in a stripe or dot shape by causing windows to remain at the n side of a semiconductor in correspondence to luminous regions, causing the luminous regions to radiate, and observing the same by an infrared ray detector thereby to make it possible to inspect the distribution of characteristics in the state of a wafer.
CONSTITUTION: A multilayer liquid-phase growth layer 2 is formed on an n-GaAs substrate 1 and a stripe structure is applied thereto, and thereafter an ohmic electrode 3 consisting of Cr and Au is caused to adhere to the p side. On the other hand, at the n side a metal plate 10 is placed so that long holes 11a, 11b... confront said stripe, and an Au Ge alloy is caused to adhere thereon to form an ohmic electrode 4 at the n side. A voltage is applied to a space between electrodes 3 and 4 to cause the same to radiate, and the illuminous state is observed through the window part 11 by an infrared ray detector or the like using a silicon visicon.
COPYRIGHT: (C)1980,JPO&Japio
JP10638878A 1978-08-31 1978-08-31 Method of inspecting semiconductor wafer Pending JPS5534423A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10638878A JPS5534423A (en) 1978-08-31 1978-08-31 Method of inspecting semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10638878A JPS5534423A (en) 1978-08-31 1978-08-31 Method of inspecting semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5534423A true JPS5534423A (en) 1980-03-11

Family

ID=14432307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10638878A Pending JPS5534423A (en) 1978-08-31 1978-08-31 Method of inspecting semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5534423A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184556A (en) * 2005-12-09 2007-07-19 Mitsubishi Electric Corp Semiconductor laser, its fabrication process and evaluation device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184556A (en) * 2005-12-09 2007-07-19 Mitsubishi Electric Corp Semiconductor laser, its fabrication process and evaluation device

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