CN113567534B - Device and method for collecting metal ions on surface of wafer - Google Patents
Device and method for collecting metal ions on surface of wafer Download PDFInfo
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- CN113567534B CN113567534B CN202111123683.6A CN202111123683A CN113567534B CN 113567534 B CN113567534 B CN 113567534B CN 202111123683 A CN202111123683 A CN 202111123683A CN 113567534 B CN113567534 B CN 113567534B
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- G01N35/00—Automatic analysis not limited to methods or materials provided for in any single one of groups G01N1/00 - G01N33/00; Handling materials therefor
- G01N35/0099—Automatic analysis not limited to methods or materials provided for in any single one of groups G01N1/00 - G01N33/00; Handling materials therefor comprising robots or similar manipulators
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
The embodiment of the invention discloses a device and a method for collecting metal ions on the surface of a wafer; the wafer surface metal ion collection system includes: a base; the bearing device is arranged on the base, a first sucker and a second sucker for sucking the wafer are arranged on the bearing device, and the second sucker can be turned over; the first sucker and the second sucker are both air cavity vacuum suckers with air suspension non-contact type; the gas phase decomposition collector is used for enabling the scanning liquid to roll on the surface of the wafer so as to collect metal ions on the surface of the wafer; the collector is provided with at least one scanning nozzle for spraying scanning liquid on the surface of the wafer; and the movement mechanism is used for controlling the collector to move and/or rotate.
Description
Technical Field
The embodiment of the invention relates to the technical field of semiconductors, in particular to a device and a method for collecting metal ions on the surface of a wafer.
Background
The wafer is prepared by using a Magnetic Field Czochralski Method (MCZ) to obtain a silicon single crystal rod, and the silicon single crystal rod is prepared by the processes of wire cutting, grinding, polishing, cleaning and the like. Contamination of various metal impurities can exist in the wafer processing process, so that the failure of subsequent devices is caused, wherein light metals (Na, Mg, Al, K, Ca and the like) can cause the breakdown of the devices to reduce the voltage, and heavy metals (Cr, Mn, Fe, Ni, Cu, Zn and the like) can cause the service life of the devices to reduce. The wafer is used as a raw material of a device, and the metal content on the surface of the wafer directly affects the yield of the device, so the metal ion content on the surface and the edge of the wafer needs to be tested and controlled below a certain specification so as to meet the requirements of the subsequent process.
However, the current collection device for the metal ion content on the surface of the related wafer can only scan and collect the metal ions on the front surface and the edge of the wafer or on the back surface and the edge of the wafer, and cannot scan and sample the front surface, the back surface and the edge of the wafer at the same time, so that the current collection device needs at least two wafers to measure the metal ion content on the front surface, the back surface and the edge of the wafer when testing the metal ion content on the surface and the edge of the wafer.
Disclosure of Invention
In view of the above, embodiments of the present invention provide a device and a method for collecting metal ions on a wafer surface; the method can reduce the scrappage of excessive wafers caused by testing metal ions, reduce the testing cost and improve the sampling efficiency; on the other hand, the phenomenon that the front side or the back side of the wafer is cross-polluted or scratched to influence the testing precision of the metal ion content on the surface of the wafer can be avoided.
The technical scheme of the embodiment of the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides a wafer surface metal ion collection device, where the wafer surface metal ion collection device includes:
a base;
the bearing device is arranged on the base, a first sucker and a second sucker for sucking the wafer are arranged on the bearing device, and the second sucker can be turned over; the first sucker and the second sucker are both air cavity vacuum suckers with air suspension non-contact type;
the collector is used for enabling the scanning liquid to roll on the surface of the wafer so as to collect metal ions on the surface of the wafer; the collector is provided with at least one scanning nozzle for spraying scanning liquid on the surface of the wafer;
and the movement mechanism is used for controlling the collector to move and/or rotate.
In a second aspect, an embodiment of the present invention provides a method for collecting metal ions on a wafer surface, where the method for collecting metal ions on a wafer surface can be applied to the apparatus for collecting metal ions on a wafer surface according to the first aspect, and the method for collecting metal ions on a wafer surface includes:
placing the wafer with the surface oxide film removed on a second sucker, rotating the wafer to a preset position below the collector, and keeping the wafer still;
the bottom of an outer nozzle of a scanning nozzle in the collector and the surface of the wafer on the second sucker are kept at a proper distance and a scanning starting position by adjusting a motion mechanism;
and spraying scanning liquid to the surface of the wafer through the scanning nozzle, and adjusting the position of the collector according to a set scanning route so that the scanning liquid drops fall on different position areas of the surface of the wafer and roll on the surface of the wafer so as to collect metal ions on the surface of the wafer.
The embodiment of the invention provides a device and a method for collecting metal ions on the surface of a wafer; the wafer surface metal ion collecting device can realize scanning sampling of metal ions on the front side, the back side and the edge of a wafer at one time, so that excessive wafer scrap caused by testing of the metal ions is reduced, the testing cost is reduced, and the sampling efficiency is improved; on the other hand, the wafer surface metal ion collecting device adopts a gas suspension non-contact type air cavity vacuum chuck to adsorb and transfer the wafer, so that the phenomenon that the front surface or the back surface of the wafer is cross-polluted or scratched to influence the testing precision of the metal ion content on the surface of the wafer is avoided.
Drawings
Fig. 1 is a schematic structural diagram of a collector scanning a surface and an edge of a wafer in a conventional technical solution according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a wafer surface metal ion collection device according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a gas-suspension non-contact single-chamber vacuum chuck according to an embodiment of the present invention;
FIG. 4 is an integrated schematic view of a gas-suspension non-contact multi-air-cavity vacuum chuck according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a vortex suction cup according to an embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating the operation of the second chuck for sucking the backside of the wafer according to the embodiment of the present invention;
FIG. 7 is a schematic diagram illustrating the operation of the first chuck sucking the front surface of the wafer according to the embodiment of the present invention;
fig. 8 is a schematic flow chart of a method for collecting metal ions on a wafer surface according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Before describing the wafer surface metal ion collection device provided by the embodiment of the present disclosure in detail, the following description is made for the related art:
in order to realize the test of the content of ultra-micro metal ions in the related art, the wafer metal ion content test requires two devices, namely, Vapor Phase Decomposition (VPD) and Inductively Coupled Plasma Mass Spectrometry (ICP-MS), to perform ion quantitative analysis on the collected VPD liquid, and generally includes the following steps:
s1, transferring the wafer to a VPD corrosion tank through a manipulator, and simultaneously introducing HF solution steam into the VPD corrosion tank for 2-5 minutes to remove an oxide film on the surface of the wafer so as to enable metal ions in the film to be dissociated on the surface of the wafer; usually, a very thin silicon dioxide film is formed on the surface of the wafer and the surface of the heated wafer, hydrofluoric acid steam is used as a cleaning agent, the silicon dioxide film with the thickness of about 10 angstroms can be dissolved by 38% of high-purity hydrofluoric acid within 5min, and meanwhile, after the wafer is cleaned by the hydrofluoric acid, Si on the outermost layer of the surface of the wafer almost takes an H bond as a terminal structure, the surface of the silicon dioxide film is hydrophobic, so that VPD liquid drops can roll on the surface of the wafer and trailing and residue cannot be formed on the surface of the wafer, and the collection integrity of the VPD liquid drops is ensured;
s2, sucking 1ml of VPD liquid drops through a nozzle of a surface metal collecting system on a scanning platform of the ICP-MS device, and collecting metal components on the surface of the wafer by rolling the VPD liquid drops on the surface or the edge of the wafer;
and S3, atomizing the VPD liquid drops containing the metal components, performing spectral analysis to test the metal content in the recovery liquid, and subtracting the metal content in the VPD liquid drops from the metal content in the recovery liquid to calculate the content of various metal ions on the surface of the wafer.
Fig. 1 is a schematic diagram illustrating a related art wafer W surface and edge scanning by a collector 1. As shown in fig. 1, the collector 1 mainly includes: syringe pump 11, vacuum tube 12, outer nozzle 13, inner nozzle 14, sealing plug 15, valve 16, vacuum pump 17, and edge support 18. The mechanical arm drives the bottom of a scanning outer nozzle 13 in the sampling device 1 to keep a proper distance from the surface of the wafer W; the syringe pump 11 injects the scanning liquid Dro into the cavity between the inner nozzle 14 and the outer nozzle 13, the vacuum pump 17 pumps air in the cavity between the inner nozzle 14 and the outer nozzle 13 to provide a fixed vacuum, and the vacuum pump 17 stops pumping air when the weight of the scanning liquid Dro is balanced with the vacuum degree in the cavity between the inner nozzle 14 and the outer nozzle 13. At this time, one part of the scanning liquid Dro drops into the cavity between the inner nozzle and the outer nozzle, and the other part of the scanning liquid Dro is automatically suspended outside the cavity between the inner nozzle and the outer nozzle so as to be in contact with the surface of the wafer W for scanning; and finally, according to the set scanning route, adjusting the position of the scanning mechanical arm to enable the scanning liquid Dro to drip on different position areas such as the surface and the edge of the wafer W and enable the scanning liquid Dro to roll on the surface and the edge of the wafer W so as to collect metal components on the surface and the edge of the wafer W.
It should be noted that, the collector 1 can scan and collect metal components on the front surface and the edge of the wafer W or the back surface and the edge of the wafer W at the same time, but cannot scan and sample the front surface, the back surface and the edge of the wafer W at the same time, because the back surface or the front surface of the wafer W may contact with a robot or a stage to generate cross contamination, and therefore the surface cannot truly reflect the content of metal ions on the surface of the wafer W, and therefore at least two wafers W are required to obtain the content of metal ions on the front surface, the back surface and the edge of the wafer W when the sampling device 1 is used to scan the surface of the wafer W.
Understandably, when the surface of the wafer W is sampled by the collector 1, at least two wafers W are scrapped due to the fact that metal ions on the front surface, the back surface and the edge are measured, and meanwhile, double time and cost are needed for removing an oxidation film on the surface of the wafer W and scanning and sampling, so that sampling efficiency is low, and testing cost is doubled.
Based on the above description, referring to fig. 2, a wafer W surface metal ion collection device 2 according to an embodiment of the present invention is shown, where the wafer W surface metal ion collection device 2 specifically includes:
a base 21;
a carrier 22 disposed on the base 21, wherein the carrier 22 is provided with a first chuck 221 and a second chuck 222 for sucking a wafer W, and the second chuck 222 can be turned over; the first suction cup 221 and the second suction cup 222 are both air-suspending non-contact type air cavity vacuum suction cups;
a collector 1 for rolling the scanning liquid Dro on the surface of the wafer W to collect metal ions on the surface of the wafer W; the collector 1 is provided with at least one scanning nozzle for spraying scanning liquid Dro on the surface of the wafer W;
a movement mechanism 23 for controlling the movement and/or rotation of the harvester 1.
It should be noted that the front surface of the wafer W in the embodiment of the present invention includes the front surface, the back surface and the edge of the wafer W.
It should be noted that the number of the scanning nozzles in the collector 1 is at least one, but not limited to this, and may be increased or decreased in combination with the actual number.
The wafer surface metal ion collection device 2 shown in fig. 2 can scan and sample metal ions on the front surface, the back surface and the edge of the wafer W at one time, so that the scrappage of too many wafers W caused by testing the metal ions is reduced, the testing cost is reduced, and the sampling efficiency is improved; on the other hand, the wafer surface metal ion collecting device 2 adopts a gas suspension non-contact type gas cavity vacuum chuck to adsorb and transfer the wafer W, so that the phenomenon that the front surface or the back surface of the wafer W is cross-polluted or scratched to influence the testing precision of the metal ion content on the surface of the wafer W is avoided.
For the wafer surface metal ion collection apparatus 2 shown in fig. 2, in some examples, the carrier 22 further includes: a base 223, a support shaft 224, a first rotation shaft 225, a second rotation shaft 226, an upper robot 227, and a lower robot 228; the first rotation shaft 225 and the second rotation shaft 226 may be respectively rotated in a horizontal direction around the support shaft 224.
For the above example, in some specific implementations, the upper mechanical arm 227 includes a first connecting arm 2271 and a second connecting arm 2272, and the first suction cup 221 is connected to the second rotation shaft 226 through the first connecting arm 2271 and the second connecting arm 2272; a third rotating shaft 2273 is disposed on the first connecting arm 2271, and the third rotating shaft 2273 can rotate in the vertical direction to make the first chuck 221 drive the wafer W to turn;
the lower robot arm 228 includes a third link arm 2281 and a fourth link arm 2282, and the second suction cup 222 is connected to the first rotation shaft 225 through the third link arm 2281 and the fourth link arm 2282.
For the wafer surface metal ion collection apparatus 2 shown in fig. 2, in some examples, the first chuck 221 and/or the second chuck 222 are a gas-suspension non-contact single-chamber vacuum chuck and/or a gas-suspension non-contact multi-chamber vacuum chuck. For example, the first chuck 221 and/or the second chuck 222 may be a gas suspension non-contact single-chamber vacuum chuck, as shown in fig. 3, for example, when the second chuck 222 is opened, the high-speed compressed gas 34 enters the gas chamber 32 from the gas inlet channel 33 at the top of the cylindrical inner chamber along a tangential direction, the compressed gas 34 performs a spiral downward swirling motion under the constraint of the cylindrical chamber surface wall 31 to form a swirling gas flow 35, at this time, the swirling gas flow 35 swirls around the inner wall surface at a high speed to generate a negative pressure in the central region of the gas chamber 32 to form a local vacuum, at this time, the pressure in the chamber is reduced, and the wafer W placed at the bottom of the second chuck 222 is subjected to a vertical upward suction force 36 due to the influence of the negative pressure, so as to implement a suction process of the wafer W. Meanwhile, most of the compressed gas in the air cavity 32 is discharged to the outside through the gap 37 between the bottom of the second chuck 222 and the surface of the wafer W, and at this time, the compressed gas forms a reverse thrust to the surface of the wafer W, and when the resultant force of the suction force and the reverse thrust and the gravity of the wafer W reach a balance, an air film is formed between the bottom of the second chuck and the wafer W, so as to realize the floating non-contact suction of the wafer W.
Similarly, the first chuck 221 may also perform suction of the wafer W using the above-described principle, and perform non-contact transfer of the wafer W between the first chuck 221 and the second chuck 222 using the vacuum suction principle.
As can be understood, the gas suspension non-contact vacuum chuck uses gas as a working medium, so that the phenomenon of cross contamination or damage is avoided in the process of transferring and conveying the wafer W; the non-contact type transmission method has the characteristics of no magnetism, cleanness, no pollution, small heat and high-speed transportation, and can meet the requirements of cleanness performance and temperature of semiconductors.
On the other hand, in the specific implementation process, the first chuck 221 and/or the second chuck 222 may be a gas-suspension non-contact multi-air-cavity vacuum chuck, wherein the multi-air-cavity vacuum chuck includes a plurality of air cavities, as shown in fig. 4, because the first chuck 221 and/or the second chuck 222 is integrated by changing a single-air-cavity chuck into a multi-air-cavity chuck, it can avoid that the chuck rotates or vibrates along with the cyclone direction during the process of adsorbing the wafer W due to misalignment between the negative pressure center in the single-air-cavity and the geometric center of the chuck, the tangential friction between the compressed gas and the wafer W, and the influence of the cyclone direction in the air cavity 32, which causes unstable adsorption and leads to the falling of the wafer W. The multi-air-cavity vacuum chuck can uniformly distribute the compressed air 34 to the air cavities 32, greatly reduce the air flow of each air cavity 32 and simultaneously obtain the air film with uniformly distributed buoyancy, thereby reducing the air ejection speed of the air cavities 32 and not disturbing the environment of a clean room and generating static electricity. Meanwhile, the multi-air-cavity vacuum chuck can offset the influence of the cyclone direction in the single-air-cavity chuck in the process of adsorbing the wafer W, so that the clamping force is increased, and the adsorption effect of the wafer W is enhanced.
It should be noted that, referring to the multi-air-cavity vacuum chuck, the first chuck 221 and/or the second chuck 222 may be an integrated vacuum chuck formed by combining a plurality of single-air-cavity vacuum chucks, for example, the first chuck 221 and/or the second chuck 222 may be one or more sets of the same whirlpool chucks, wherein the number of the single-air-cavity vacuum chucks in the clockwise direction and the number of the single-air-cavity vacuum chucks in the counterclockwise direction are the same and are symmetrically distributed. Specifically, the one or more sets of identical vortex chucks represent one or more sets of integrated vacuum chucks having multiple single-air-cavity vacuum chucks with different air inlet directions, and specifically, as shown in fig. 5, where fig. 5 shows a vortex chuck provided with 6 single-air-cavity vacuum chucks, but in the implementation process of the present invention, the number of the single-air-cavity vacuum chucks in the integrated vacuum chuck depends on the specific situation. It should be noted that each solid arrow in fig. 5 represents the torque distribution formed on the surface of the wafer W by each single-chamber vacuum chuck. It can understand, not only can increase wafer W's adsorption affinity when the quantity of the single air cavity vacuum chuck in the vortex sucking disc increases, thereby also can make between the vortex sucking disc offset its irregular fluctuation each other and make wafer W's adsorption affinity more steady, and set up two several in the vortex sucking disc except that the air inlet direction is different, other parameter identical single air cavity vacuum chuck, and clockwise, each half of anticlockwise turning to, can make the moment of torsion that clockwise flows to the sucking disc equal with the moment of torsion that anticlockwise sucking disc flows to, finally make the compound moment of torsion that each region of wafer W surface received more balanced, and then make wafer W's absorption more stable.
It should be noted that, in the implementation process of the present invention, because of factors such as machining and difficulty in controlling air flow, the plurality of single-air-cavity vacuum suction cups are circumferentially and symmetrically arranged along the geometric center of the integrated suction cup, so as to ensure that the vortex forms generated by the plurality of single-air-cavity vacuum suction cups are similar.
It can be understood that the limitation of the single-air-cavity vacuum chuck can be avoided in the above case, and in short, the more the number of the single-air-cavity vacuum chucks installed in the integrated vacuum chuck is, the more advantageous the integrated vacuum chuck is, and the more stable the effect of clamping and adsorbing the wafer W is.
For the above example, in some specific implementations, the diameters of the first chuck 221 and the second chuck 222 are smaller than the diameter of the wafer W. It is understood that the diameter of the first chuck 221 and the second chuck 222 is smaller than the diameter of the wafer W, so as to facilitate the wafer W to be picked and placed by the robot arm.
For the wafer surface metal ion collection device 2 shown in fig. 2, in some examples, the composition of the scanning liquid Dro is: quality of0.264% of HF and 11.42% of H2O2And 88.316% by mass of H2O; wherein, hydrogen peroxide (H)2O2) The mass concentration of the compound is 35 +/-1 percent, and the purity of the compound is grade AA-10 of the Japanese Moore chemistry; the mass concentration of hydrofluoric acid (HF) is 38%, Japan Moore chemistry AA-10 grade, purity; ultrapure water: resistivity is more than or equal to 18M omega cm, water quality: resistivity of>18.2MΩ·cm，TOC<5ppb。
For the wafer surface metal ion collection apparatus 2 shown in fig. 2, in some examples, the movement mechanism 23 includes:
a first arm 231, wherein the first arm 231 is disposed on the base 21 along a first direction parallel to the bearing surface of the base 21;
an L-shaped second arm 232, including a vertical arm 2321 and a horizontal arm 2322, wherein the vertical arm 2321 is disposed along a second direction perpendicular to the bearing surface of the base 21 and can reciprocate on the first arm 231, and the horizontal arm 2322 is disposed along a third direction perpendicular to the first direction and the second direction;
a slider 233, wherein the slider 233 is movably arranged on the cross arm 2322;
a fourth rotating shaft 234, wherein the fourth rotating shaft 234 is disposed along the second direction, can rotate around the second direction, and can move under the driving of the slider 233; wherein the content of the first and second substances,
the fourth rotating shaft 234 is connected with the collector 1 through a connecting shaft 235, and a rotating joint 236 is arranged between the fourth rotating shaft 234 and the connecting shaft 235 to drive the collector 1 to rotate to collect metal ions on the surface of the wafer W.
It should be noted that, when sampling the surface of the wafer W, as shown in fig. 6, the lower robot 228 is first used to suspend the back surface of the wafer W above the second chuck 222 in a non-contact manner (at this moment, the opening of the air cavity 32 of the second chuck 222 is facing upward), and the wafer is kept stationary, and at this moment, the collector 1 scans and samples the front surface of the wafer W, and then scans and samples the edge of the wafer W. It can be understood that the adjustment rotary joint 236 is required to make the connection shaft 235 and the sampling device 1 perpendicular to the fourth rotation shaft 234 for scanning and sampling the edge of the wafer W.
After the front and edge scanning and sampling of the wafer W are completed, the upper mechanical arm 227 rotates to the upper side of the front of the wafer W, the first suction cup 221 is opened to perform non-contact suspension suction on the front of the wafer W (at this time, the opening of the air cavity 32 of the first suction cup 221 is downward), the second suction cup 222 is closed at the same time, and after the second suction cup 222 is removed by rotating the lower mechanical arm 228, the wafer W is turned over by rotating the third rotating shaft 2273, specifically as shown in fig. 7, so that the back of the wafer W is upward (at this time, the opening of the air cavity 32 of the first suction cup 221 is upward), and the position of the collector 1 is adjusted at the same time, and the scanning and sampling of the back of the wafer W are started.
It should be noted that, since the wafer surface metal ion collection device shown in fig. 7 includes the same components as those in fig. 6, only the reference numerals of the components related to the above description are shown in fig. 7.
For the wafer surface metal ion collection device 2 shown in fig. 2, in some examples, the collection device 2 further includes a housing 24, and the housing 24 is used to isolate the wafer surface metal ion collection device 2 from the external environment, so as to reduce the influence of the external environment on the test result. The outer cover 24 is made of a transparent acid-base corrosion-resistant material. As can be appreciated, the outer cover 24 is made of a transparent acid-resistant and alkali-resistant material, so that the process of collecting metal ions on the surface of the wafer W can be checked in real time through the transparent outer cover.
For the above example, in some specific implementations, the outer cover 24 is provided with an air inlet 241 and an air outlet 242, and a 10-grade air filter 243 is disposed at the air inlet 241, so as to filter various particles in the air and avoid polluting the environment inside the outer cover 24 and affecting the test result.
It should be noted that a sampling door (not shown) is provided at a side of the housing so that the wafer cassette 3 carrying the wafer W is placed in the housing 24, so that the robot arm can place the wafer W at a predetermined scanning position or return the wafer W to the wafer cassette 3.
Referring to fig. 8, a method for collecting metal ions on a surface of a wafer W according to an embodiment of the present invention is shown, where the method for collecting metal ions on a surface of a wafer W can be applied to the device 2 for collecting metal ions on a surface of a wafer according to the foregoing technical solution, and the method for collecting metal ions on a surface of a wafer W includes:
s801, placing the wafer W with the surface oxide film removed on a second sucker, rotating to a preset position below a collector, and keeping the wafer W still;
s802, the bottom of an outer nozzle of a scanning nozzle in the collector and the surface of the wafer W on the second sucker keep a proper distance and a scanning starting position by adjusting a motion mechanism;
and S803, spraying scanning liquid to the surface of the wafer W through the scanning nozzle, and adjusting the position of the collector according to a set scanning route so that the scanning liquid drops fall on different position areas of the surface of the wafer W and roll on the surface of the wafer W so as to collect metal ions on the surface of the wafer W.
For the technical solution described in fig. 8, in some examples, the method for collecting metal ions on the surface of the wafer further includes:
and transferring the wafer W to a VPD etching tank in a non-contact manner, and introducing HF steam into the VPD etching tank for 2-5 minutes to remove the surface oxide film of the wafer W.
Understandably, after the metal ions on the surface of the wafer W are collected, the scanned scanning liquid is atomized and then is subjected to spectral analysis to test the content of the metal ions in the recovered liquid and to test the content of the metal ions in the scanning liquid before scanning; and subtracting the content of each metal ion in the scanning liquid before scanning from the content of each metal ion in the recovery liquid, so that the content of each metal ion on the surface of the wafer W can be calculated.
It should be noted that: the technical schemes described in the embodiments of the present invention can be combined arbitrarily without conflict.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (8)
1. The utility model provides a wafer surface metal ion collection system which characterized in that, wafer surface metal ion collection system includes:
a base;
the bearing device is arranged on the base, a first sucker and a second sucker for sucking the wafer are arranged on the bearing device, and the second sucker can be turned over; the first sucker and the second sucker are both air cavity vacuum suckers with air suspension non-contact type; the air cavity vacuum chuck is a vacuum chuck with a plurality of air cavities;
the collector is used for enabling the scanning liquid to roll on the surface of the wafer so as to collect metal ions on the surface of the wafer; the collector is provided with at least one scanning nozzle for spraying scanning liquid on the surface of the wafer;
and the movement mechanism is used for controlling the collector to move and/or rotate.
2. The wafer surface metal ion collection device of claim 1, wherein the carrier further comprises: the robot comprises a base, a supporting shaft, a first rotating shaft, a second rotating shaft, an upper mechanical arm and a lower mechanical arm; the first and second rotating shafts may be respectively rotatable in a horizontal direction about the support shaft; wherein the content of the first and second substances,
the upper mechanical arm comprises a first connecting arm and a second connecting arm, and the first suction disc is connected with the second rotating shaft through the first connecting arm and the second connecting arm; the first connecting arm is provided with a third rotating shaft, and the third rotating shaft can rotate in the vertical direction to enable the first suction disc to drive the wafer to turn over;
the lower mechanical arm comprises a third connecting arm and a fourth connecting arm, and the second sucker is connected with the first rotating shaft through the third connecting arm and the fourth connecting arm.
3. The wafer surface metal ion collection device of claim 1, wherein the first chuck and the second chuck each have a diameter less than a diameter of the wafer.
4. The wafer surface metal ion collection device of claim 1, wherein the scanning liquid comprises: HF of 0.264% by mass and H of 11.42% by mass2O2And 88.316% by mass of H2O; wherein, hydrogen peroxide (H)2O2) The mass concentration of the compound is 35 +/-1 percent, and the purity of the compound is grade AA-10 of the Japanese Moore chemistry; the mass concentration of hydrofluoric acid (HF) is 38%, Japan Moore chemistry AA-10 grade, purity; ultrapure water: resistivity is more than or equal to 18M omega cm, water quality: resistivity of>18.2MΩ·cm，TOC<5ppb。
5. The wafer surface metal ion collection device of claim 1, wherein the motion mechanism comprises:
the first arm is arranged on the base along a first direction parallel to the bearing surface of the base;
the L-shaped second arm comprises a vertical arm and a cross arm, the vertical arm is arranged along a second direction perpendicular to the bearing surface of the base and can reciprocate on the first arm, and the cross arm is arranged along a third direction perpendicular to the first direction and the second direction;
the sliding block is movably arranged on the cross arm;
the fourth rotating shaft is arranged along the second direction, can rotate around the second direction, and can move under the driving of the sliding block; wherein the content of the first and second substances,
the fourth rotating shaft is connected with the collector through a connecting shaft, and a rotating joint is arranged between the fourth rotating shaft and the connecting shaft so as to drive the collector to rotate to collect metal ions on the surface of the wafer.
6. The wafer surface metal ion collection device of claim 1, further comprising an outer cover, wherein the outer cover is made of a transparent acid-base-corrosion-resistant material.
7. The wafer surface metal ion collection device of claim 6, wherein the housing is provided with an air inlet and an air outlet, and the air inlet is provided with a 10-grade cleanliness air filter.
8. A method for collecting metal ions on a wafer surface, which can be applied to the apparatus of any one of claims 1 to 7, the method comprising:
placing the wafer with the surface oxide film removed on a second sucker, rotating the wafer to a preset position below the collector, and keeping the wafer still;
the bottom of an outer nozzle of a scanning nozzle in the collector and the surface of the wafer on the second sucker are kept at a proper distance and a scanning starting position by adjusting a motion mechanism;
and spraying scanning liquid to the surface of the wafer through the scanning nozzle, and adjusting the position of the collector according to a set scanning route so that the scanning liquid drops fall on different position areas of the surface of the wafer and roll on the surface of the wafer so as to collect metal ions on the surface of the wafer.
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| CN115575180A (en) * | 2022-09-23 | 2023-01-06 | 西安奕斯伟材料科技有限公司 | Silicon wafer edge metal ion collecting device and method |
| CN117607056B (en) * | 2024-01-24 | 2024-06-14 | 宁波九纵智能科技有限公司 | Bilateral multi-station front and back surface appearance detection device and detection method thereof |
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