CN110186994A - The processing analysis method and processing unit of heavy metal in a kind of silicon wafer - Google Patents
The processing analysis method and processing unit of heavy metal in a kind of silicon wafer Download PDFInfo
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- CN110186994A CN110186994A CN201910477207.0A CN201910477207A CN110186994A CN 110186994 A CN110186994 A CN 110186994A CN 201910477207 A CN201910477207 A CN 201910477207A CN 110186994 A CN110186994 A CN 110186994A
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- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- G01N1/34—Purifying; Cleaning
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- G—PHYSICS
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- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
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Abstract
The present invention provides the processing analysis method and processing unit of heavy metal in a kind of silicon wafer, processing analysis method the following steps are included: cut on crystal orientation to silicon wafer to be processed, obtain include detection zone sample silicon wafer；The surface of sample silicon wafer is cleaned；Sample silicon wafer after cleaning is placed in the mixed vapour of nitric acid and hydrofluoric acid and is dissolved, sample silicon wafer treatment fluid is obtained.In processing analysis method of the invention, silicon wafer to be processed is cut on crystal orientation, obtain include detection zone sample silicon wafer, the surface of sample silicon wafer is cleaned, sample silicon wafer after cleaning is placed in the mixed vapour of nitric acid and hydrofluoric acid and is dissolved, obtain sample silicon wafer treatment fluid, the pollution of silicon wafer can be reduced by the above method, convenient for improving the accuracy of testing result when the analysis of subsequent silicon wafer, the dosage for reducing nitric acid and hydrofluoric acid, does not need the nitric acid and hydrofluoric acid of high-purity, reduces cost, Simplified analysis operating process, it is high-efficient.
Description
Technical field
The present invention relates to silicon chip technology field, in particular to the processing analysis method of heavy metal and processing dress in a kind of silicon wafer
It sets.
Background technique
In the manufacturing process of silicon wafer, when being cut into silicon wafer from silicon ingot, blade or scroll saw are touched, heavy metal can be to silicon
Diffusion inside piece.Heavy metal pollution most serious in polishing, due to two sides and the lapping liquid of silicon wafer, grinding pad long-time contact,
Pressurization and grinding, are easy pollution by the impurity element from these materials, later can be to spreading inside silicon wafer.In reality,
Aiming at the problem that impurity element in lapping liquid, by adding chelating agent in lapping liquid, chelating agent can be formed with heavy metal
Chelate achievees the effect that capture heavy metal；Also not absolutely not metal impurities in grinding pad, in most cases, grinding pad
It will use high molecular polymer, and most polymer will use metal as additive, metallic addition can also make silicon wafer
At pollution.For the silicon wafer that inside is polluted by impurity element, in device fabrication behind, it can be taken the photograph several hundred to thousands of
Heat treatment is repeated at a temperature of family name's degree, impurity element can spread repeatedly, move at this time, in made fine circuits easily
The problems such as causing poor flow, short circuit, proof voltage decline.Therefore, the analysis detection of heavy metal is particularly important in silicon wafer.
When to silicon chip surface analysis, the mixed aqueous solution of hydrofluoric acid and nitric acid need to be dripped on silicon chip surface, be contacted and molten
Solution corrodes entire silicon chip surface, then again recycles corrosive liquid, then analyzed by instruments such as ICP, analysis method detection
Result error is big, and accuracy is low.About the analysis method of impurity in wafer bulk, pass through the metal analysis method for silicon chip surface
Extension, successively silicon chip surface can be analyzed from longitudinal direction, but die size is increasing, is such as in diameter
The silicon wafer of 300mm, it is extremely difficult that entire silicon chip surface equably carries out to depth profile, can generate because of position difference biggish
Deviation.The thickness of silicon wafer is usually 780-800 μm, in order to dissolve this all areas, not only needs a large amount of hydrofluoric acid, nitre
Acid, it is also necessary to which long time at least needs more than for three days on end, and efficiency is excessively poor, impracticable.In addition, if pretreatment time
Longer, then environmental pollution and a possibility that wafer contamination, increase accordingly, can not Correct Analysis and assessment silicon wafer.It is carried out to silicon wafer
The reagent that quite large-scale equipment and high-purity are needed when processing, cause it is at high cost, even if using these equipment and high-purity
Reagent accurate value may not also can be obtained, actually it sometimes appear that a few % to 10% different degrees of exceptional value, it is difficult to really
The accuracy and repeatability of detected value are protected, analysis operating process is continuously many and diverse, is unfavorable for the analysis detection of heavy metal in silicon wafer.
Summary of the invention
In view of this, the present invention provides the processing analysis method and processing unit of heavy metal in a kind of silicon wafer, to solve
Vulnerable to pollution in silicon wafer treatment process, silicon wafer testing result accuracy is low, and the dosage of nitric acid and hydrofluoric acid is big, at high cost, efficiency
Low problem.
In order to solve the above technical problems, the invention adopts the following technical scheme:
According to a first aspect of the present invention in the silicon wafer of embodiment heavy metal processing analysis method, comprising the following steps:
Silicon wafer to be processed is cut on crystal orientation, obtain include detection zone sample silicon wafer；
The surface of the sample silicon wafer is cleaned；
The sample silicon wafer after cleaning is placed in the mixed vapour of nitric acid and hydrofluoric acid and is dissolved, sample silicon is obtained
Piece treatment fluid.
Further, the surface of the sample silicon wafer is cleaned, comprising:
The sample silicon wafer is placed in the mixed vapour of nitric acid and hydrofluoric acid, the surface of the sample silicon wafer is carried out clearly
It washes.
Further, further comprising the steps of:
Hydrofluoric acid solution and evaporation drying are added into the sample silicon wafer treatment fluid, obtains the first processing sample；
The first processing sample is added in aqueous solution of nitric acid and obtains measurement solution；
Detect the heavy metal in the measurement solution.
The processing unit of the silicon wafer of embodiment according to a second aspect of the present invention, comprising:
Container, define in the container for accommodate include nitric acid solution and hydrofluoric acid solution mixed solution first
Chamber and the second chamber being connected to the first chamber；
Heating mechanism, for heating the mixed solution in the first chamber, so that the mixed solution evaporates shape
The second chamber is able to enter at the mixed vapour of nitric acid and hydrofluoric acid and the mixed vapour；
Sample box, the sample box are placed in the second chamber for containing sample silicon wafer, the mixed vapour energy
Enough enter in the sample box so that the sample silicon wafer dissolves in the mixed vapour.
Further, the container is the metal material or ceramic material container that outside is coated with polytetrafluoroethylene (PTFE), described
Heating mechanism includes mantle heater, and the mantle heater is set in the outside of the container.
Further, the container is column, and the first chamber is located at the bottom of the container, the second chamber position
In the top of the container, columnar gas-guide tube, one end of the gas-guide tube and the first chamber are equipped in the container
Open communication, the other end of the gas-guide tube protrude into the second chamber and are connected to the second chamber, the gas-guide tube
The axis collinear of axis and the container.
Further, be respectively equipped with the air inlet and air outlet being connected to the second chamber on the container, it is described into
Port and axisymmetrical of the gas outlet about the container, the neighbouring air inlet and the outlet in the second chamber
The position of mouth is respectively equipped with the porous plate for having through-hole, axisymmetrical of two porous plates about the container, institute
The quantity for stating sample box is multiple and is respectively placed on the corresponding porous plate.
Further, the processing unit further include:
Two thermometers, two thermometers are all set in the second chamber, one of them described thermometer position
In the top of the gas-guide tube, another described thermometer is located at the top of the porous plate of the neighbouring gas outlet.
Further, the processing unit further include:
Inert gas feeding mechanism, the inert gas feeding mechanism are connected to the air inlet, with to second chamber
Inert gas is passed through in room.
Further, connecting tube is equipped between the inert gas feeding mechanism and the air inlet to be connected to the inertia
Gas supply device and the air inlet are respectively equipped with flowmeter and filter in the connecting tube.
The advantageous effects of the above technical solutions of the present invention are as follows:
The processing analysis method of heavy metal, cuts silicon wafer to be processed on crystal orientation in silicon wafer according to the present invention
Cut, obtain include detection zone sample silicon wafer, the surface of sample silicon wafer is cleaned, the sample silicon wafer after cleaning is placed in
It is dissolved in the mixed vapour of nitric acid and hydrofluoric acid, obtains sample silicon wafer treatment fluid, silicon wafer can be reduced by the above method
Pollution, convenient for subsequent silicon wafer analysis when improve testing result accuracy, reduce nitric acid and hydrofluoric acid dosage, do not need height
The nitric acid and hydrofluoric acid of purity, reduce cost, and Simplified analysis operating process is high-efficient.
Detailed description of the invention
Fig. 1 is the flow diagram of the processing analysis method of heavy metal in the silicon wafer of the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of the processing unit of the embodiment of the present invention；
Fig. 3 is the partial structural diagram of the processing unit of the embodiment of the present invention.
Appended drawing reference
Container 10；First chamber 11；Second chamber 12；Gas-guide tube 13；
Air inlet 14；Gas outlet 15；Porous plate 16；Thermometer 17；
Heating mechanism 20；
Sample box 30；
Inert gas feeding mechanism 40；Flowmeter 41；Filter 42.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
Attached drawing, the technical solution of the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is this hair
Bright a part of the embodiment, instead of all the embodiments.Based on described the embodiment of the present invention, ordinary skill
Personnel's every other embodiment obtained, shall fall within the protection scope of the present invention.
The processing analysis method of heavy metal in silicon wafer according to an embodiment of the present invention is detailed below.
As shown in Figure 1, in silicon wafer according to an embodiment of the present invention heavy metal processing analysis method, comprising the following steps:
Silicon wafer to be processed is cut on crystal orientation, obtain include detection zone sample silicon wafer；To the surface of sample silicon wafer
It is cleaned；Sample silicon wafer after cleaning is placed in the mixed vapour of nitric acid and hydrofluoric acid and is dissolved, sample silicon wafer is obtained
Treatment fluid.
That is, the size due to silicon wafer is larger, it can be cut into and the region detected is needed to be examined after treatment
Survey, silicon wafer to be processed can be cut on crystal orientation, obtain include detection zone sample silicon wafer, sample silicon wafer weight
Amount can be 0.30-0.35g, and the surface diameter of sample silicon wafer is 5mm or so；Then the surface of sample silicon wafer is cleaned, clearly
The pollution impurity of silicon chip surface is washed away, one layer of silicon on the surface of silicon wafer can be dissolved, then the solution of dissolution is gone, is kept away
The pollution for exempting from the impurity on silicon chip surface, the silicon wafer weight after cleaning can be 0.15-0.2g, use polytetrafluoroethyl-ne in the operation
The tweezers of alkene carry out, and avoid introducing metal impurities；Then, the sample silicon wafer after cleaning is placed in the mixing of nitric acid and hydrofluoric acid
It is dissolved in steam, obtains sample silicon wafer treatment fluid, do not need the nitric acid and hydrofluoric acid of high-purity, reduce nitric acid and hydrofluoric acid
Dosage, the pollution of silicon wafer can be reduced by the above method, convenient for subsequent silicon wafer analysis when improve testing result accuracy,
Testing result repeatability is stable and good, will not generate exceptional value, reduce cost, Simplified analysis operating process is high-efficient.Separately
Outside, prepared using silicon wafer device requirement be ultramicron concentration rank, in order to avoid introduce impurity, can in toilet into
Row, it preferably can be 10 or 1 grades that the minimum cleanliness of toilet, which can be 100 grades,.
In some embodiments of the invention, the surface of sample silicon wafer is carried out cleaning includes: that sample silicon wafer is placed in nitre
The surface of sample silicon wafer is cleaned in the mixed vapour of acid and hydrofluoric acid, by the mixed vapour of nitric acid and hydrofluoric acid to sample
Product silicon wafer is cleaned, and is enabled to one layer of silicon on the surface of sample silicon wafer to dissolve, is avoided surface impurity to sample silicon wafer rear
Influence in continuous detection, does not need the nitric acid and hydrofluoric acid of high-purity, reduces the dosage of nitric acid and hydrofluoric acid, at low cost.
It is further comprising the steps of in other embodiments of the invention: hydrofluoric acid is added into sample silicon wafer treatment fluid
Solution and evaporation drying, obtain the first processing sample；First processing sample is added in aqueous solution of nitric acid and obtains measurement solution；Inspection
Heavy metal in measurement solution.It that is to say, hydrofluoric acid solution is added into obtained sample silicon wafer treatment fluid, and evaporate dry
It is dry, sample silicon wafer treatment fluid can be placed in sample box, the solvent of sample box can reasonably select, for example can be 2ml, to
Hydrofluoric acid solution is added in sample box, hydrofluoric acid solution can be 5wt% hydrofluoric acid solution, can be on hot plate in 200 DEG C
Under be evaporated to drying, obtain the first processing sample；Hereafter, the first processing sample can be added in aqueous solution of nitric acid and is measured
Solution, for example, aqueous solution of nitric acid can be 1ml 0.5wt% aqueous solution of nitric acid, obtain measurement solution after, by detecting instrument into
Heavy metal in row detection measurement solution, detecting instrument can be ICP-MS (inductivity coupled plasma mass spectrometry), in ICP-MS
Before detection, normal concentration solution can be prepared for every kind of element in advance, and prepare calibration curve.
Hydrofluoric acid solution is the hydrofluoric acid solution of 38wt%, and nitric acid solution is the nitric acid solution of 55wt%, which needs
It is ultrapure, ICP-MS can be introduced directly into.In actual analytic process, for medical fluid used in ventilation distillate, it can be used
ICP-MS measures two kinds of blank solutions, the first is the hydrofluoric acid and nitre of the TAMAPURE-AA-100 of the chemistry systems of rubbing of high-purity more
Acid, passes through above two hydrofluoric acid and nitre when being the superfine hydrofluoric acid and nitric acid of electron level, using method of the invention second
Measurement result such as the following table 1 when acid is measured:
Table 1 is the measurement result of different hydrofluoric acid and nitric acid
Wherein, the unit of the measured value in table 1 is pptw, is the concentration of the Unit Weight of silicon sample, it can be seen from this result that,
It ventilates the not big difference of grade of hydrofluoric acid used in distillate, nitric acid, the grade of special grade chemical can be met the requirements.
The embodiment of the present invention also provides a kind of processing unit of silicon wafer, and as shown in Figures 2 and 3, processing unit includes container
10, heating mechanism 20 and sample box 30.
Specifically, defined in container 10 for accommodate include nitric acid solution and hydrofluoric acid solution mixed solution the
One chamber 11 and the second chamber 12 being connected to first chamber 11, the mixing that heating mechanism 20 is used to heat in first chamber 11 are molten
Liquid, so that mixed solution evaporates the mixed vapour to form nitric acid and hydrofluoric acid and mixed vapour is able to enter second chamber 12, sample
Product box 30 is placed in second chamber 12 so that for containing sample silicon wafer, mixed vapour is able to enter in sample box 30 so that sample silicon
Piece dissolves in mixed vapour.
That is, processing unit is mainly made of container 10, heating mechanism 20 and sample box 30, wherein in container 10
First chamber 11 and second chamber 12 can be defined, first chamber 11 is connected to second chamber 12, and first chamber 11 can be used
In accommodating mixed solution, mixed solution includes nitric acid solution and hydrofluoric acid solution.Heating mechanism 20 can be used for heating the first chamber
Mixed solution in room 11, so that mixed solution evaporates the mixed vapour to form nitric acid and hydrofluoric acid, and mixed vapour can be into
Enter in second chamber 12, sample box 30 can be placed in second chamber 12, and sample box 30 can be used for containing sample silicon wafer, sample
The volume of box 30 can reasonably select, for example can be 2ml, and sample box 30 can be into for one or more, mixed vapour
Enter in sample box 30 so that sample silicon wafer dissolves in mixed vapour.When the surface to sample silicon wafer is cleaned, can incite somebody to action
Sample silicon wafer is placed in sample box 30, by mixed vapour sample dissolution silicon wafer, is then gone dissolved solution, then will be clear
Sample silicon wafer after washing, which is placed in the mixed vapour of nitric acid and hydrofluoric acid, to be dissolved, and sample silicon wafer treatment fluid is obtained, by upper
Stating device can be realized the cleaning and dissolution of sample silicon wafer, not need the nitric acid and hydrofluoric acid of high-purity, reduce nitric acid and hydrogen fluorine
The dosage of acid, it is easy to operate, the pollution of silicon wafer can be reduced, convenient for improving the accuracy of testing result when the analysis of subsequent silicon wafer,
Cost is reduced, it is high-efficient.
In some embodiments of the invention, container 10 can be coated with the metal material or pottery of polytetrafluoroethylene (PTFE) for outside
Porcelain material container 10, for example can be the stainless steel pressure vessel for being coated with polytetrafluoroethylene (PTFE), heating mechanism 20 may include cover
Shape heater, mantle heater can be set in the outside of container 10, convenient for carrying out heating and thermal insulation to container 10, so that container 10
It is middle to keep stable temperature, prevent steam from condensing.
In other embodiments of the invention, container 10 can be column, and first chamber 11 is located at the bottom of container 10,
Second chamber 12 is located at the top of container 10, can be equipped with columnar gas-guide tube 13 in container 10, one end of gas-guide tube 13 and the
The open communication of one chamber 11, the other end of gas-guide tube 13 are protruded into second chamber 12 and are connected to second chamber 12, convenient for the
Steam in one chamber 11 enters in second chamber 12 so that steam can sample silicon wafer preferably in sample dissolution box 30,
The axis collinear of the axis of gas-guide tube 13 and container 10 enables the steam in first chamber 11 uniformly and stably to enter the
In two chambers 12, the sample silicon wafer in the sample box 30 in second chamber 12 is uniformly and stably contacted with steam, just
In the dissolution of silicon wafer, silicon wafer is enabled equably to keep rate of dissolution constant.
According to some embodiments of the present invention, the air inlet 14 being connected to second chamber 12 can be respectively equipped on container 10
With gas outlet 15, air inlet 14 and gas outlet 15 can be about the axisymmetricals of container 10, can be symmetrical about gas-guide tube 13, the
The position of neighbouring air inlet 14 and gas outlet 15 can be respectively equipped with the porous plate 16 for having through-hole in two chambers 12, namely
It is that a porous plate 16 is arranged in the position of neighbouring air inlet 14 in second chamber 12, the neighbouring gas outlet in second chamber 12
A porous plate 16 is arranged in 15 position, and two porous plates 16 can be about the axisymmetrical of container 10, the quantity of sample box 30
It is multiple, for example can is six, and sample box 30 can be respectively placed on corresponding porous plate 16, and sample box 30 can be about
The axisymmetrical of container 10 is distributed, so that the steam in first chamber 11 can uniformly and stably enter different sample boxes 30
In.In order to quickly dissolve silicon, need to be heated at high temperature, so that the solution in first chamber 11 evaporates, actual temp can be reasonable
Selection, for example can choose at 100 DEG C or more, heating is main at such a temperature occurs following reaction: Si+2HNO3+6HF→
H2SiF6+NO↑+NO2↑+3H2O, Δ H=-85.2kcal/mol (exothermic reaction), the gas (NO that the dissolution reaction of silicon generates2、
NO it) is not easy to discharge, therefore the pressure in container rises, it can be convenient for generation by setting air inlet 14 and gas outlet 15
Gas outflow, is conducive to the progress of dissolution reaction, convenient for accelerating dissolution.
Other embodiments according to the present invention, processing unit can also include two thermometers 17, two thermometers 17
It is all set in second chamber 12, one of thermometer 17 can be located at the top of gas-guide tube 13, another thermometer 17 can
To be located at the top of the porous plate 16 of neighbouring gas outlet 15, the temperature in second chamber 12 can be monitored by two thermometers 17
Degree.
In some embodiments of the invention, processing unit can also include inert gas feeding mechanism 40, inert gas
Feeding mechanism 40 can be connected to air inlet 14, can band by inert gas to be passed through inert gas into second chamber 12
Walk silicon materials, for example, in inert gas feeding mechanism 40 can be equipped with nitrogen, by inert gas feeding mechanism 40 can from into
Port 14 is passed through nitrogen into second chamber 12.
In other embodiments of the invention, connection can be equipped between inert gas feeding mechanism 40 and air inlet 14
Pipe, can be connected to inert gas feeding mechanism 40 and air inlet 14 by connecting tube, 41 He of flowmeter is respectively equipped in connecting tube
Filter 42 can monitor the flow for the inert gas being passed through in second chamber 12 by flowmeter 41, can by filter 42
It is passed through the inert gas in second chamber 12 with filtration, purification, avoids bringing impurity into.In actual application, two thermometers
17 can measure the temperature of the different parts in second chamber 12, and adjustable inert gas is passed through the temperature one for making the two
Cause, the dissolution of silicon materials can be adjusted by steam and inert gas, then by evaporation make silicon materials with wherein contain it is miscellaneous
Prime element separation, convenient for the detection of impurity element.
In application process, 30 volume of sample box can be 2ml, be added 300ml volume ratio 1:1's in first chamber 11
The nitric acid solution of 50wt% hydrofluoric acid solution and 70wt%, the mixed solution heated in first chamber 11 generate steam, first carry out
The surface washing of silicon wafer, at this point, solution need not boil, as long as steam can be generated.About the ventilatory capacity of inert gas, in order to
Make two thermometer equalities of temperature, ventilatory capacity can be 50ml/min, and the temperature in first chamber 11 can be 73-75 DEG C, at this
After carrying out the distillation of ventilation in 2 hours under part, distillation is temporarily ceased, confirms the etching state of silicon wafer and the residual component of solution and silicon
The weight of piece；It is again started up processing unit and carries out distillation generation steam, can carry out steaming for 2 hours again to be completely dissolved silicon wafer
It evaporates, then, by processing unit natural cooling, confirms silicon wafer and be completely dissolved, solution has remained 100ml or so.
Different types of silicon wafer can be measured by the above method and device, specific measurement result such as the following table 2,
Table 3, table 4 and table 5.
Table 2 is the testing result of the center and peripheral of N-type non-impurity-doped 300mm silicon wafer
Table 3 is the testing result of the center and peripheral of 1 Ω-cm 300mm silicon wafer of N-type
Table 4 is the testing result of the center and peripheral of p-type non-impurity-doped 300mm silicon wafer
Table 5 is the testing result of the center and peripheral of 0.001 Ω-cm 300mm silicon wafer of p-type
It is shown by the measurement result in above-mentioned table, the comparison of four kinds of different silicon wafers (N-type, p-type and doped level) shows P
Impurity in type doped silicon wafer is very high, and reason is that the silicon wafer has lesser polished amount, i.e., polishing removal per unit time
Measure it is less, about -10% to -15% because it is harder than other silicon wafers, it is desirable that polishing time is long, thus impurity pollution it is more.This
Outside, for all types of chips, impurity is lower and higher in edge at center, may be in the CZ except polishing and processing
It is introduced in process.As described above, can track and verify and is inside from surface by carrying out impurity and volumetric analysis in silicon wafer
The element of portion's diffusion, and process modification can be carried out, to avoid the impurity contact in polishing process.On the other hand, in order to test
It demonstrate,proves whether the pre-treating method accurately works, impurity element is made an addition in silicon chip sample, measure its rate of recovery, it is specific real
In applying method, the standard solution for corresponding to 20pptw concentration is added in sample silicon wafer, which completes above-mentioned surface
Cleaning and dissolution, measure impurity element concentration and the rate of recovery, the silicon wafer sample for measurement is 1 Ω-cm 300mm silicon wafer of N-type
Central part, testing result such as following table 6.
Table 6 is the testing result for adding the silicon wafer after impurity element
The rate of recovery is good for all elements, demonstrate this method be accurately, according to this method, by silicon dissolution,
It removes, gasification, stops contained impurity element directly and be deposited in container, the impurity member for including by principal component silicon and ultramicron
Element separation, separation completeness are high.Method in through the embodiment of the present invention can also contribute to understanding in silicon wafer manufacturing process
Actual conditions of the metal to diffusion, pollution inside silicon wafer.
Unless otherwise defined, technical term or scientific term used in the present invention are should be in fields of the present invention
The ordinary meaning that personage with general technical ability is understood." first ", " second " used in the present invention and similar word
It is not offered as any sequence, quantity or importance, and is used only to distinguish different component parts." connection " or " connected "
It is not limited to physics or mechanical connection etc. similar word, but may include electrical connection, either directly
Or it is indirect."upper", "lower", "left", "right" etc. are only used for indicating relative positional relationship, when the absolute position for being described object
After setting change, then the relative positional relationship also correspondingly changes.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, without departing from the principles of the present invention, it can also make several improvements and retouch, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
1. the processing analysis method of heavy metal in a kind of silicon wafer, which comprises the following steps:
Silicon wafer to be processed is cut on crystal orientation, obtain include detection zone sample silicon wafer；
The surface of the sample silicon wafer is cleaned；
The sample silicon wafer after cleaning is placed in the mixed vapour of nitric acid and hydrofluoric acid and is dissolved, is obtained at sample silicon wafer
Manage liquid.
2. processing analysis method according to claim 1, which is characterized in that carry out the surface of the sample silicon wafer clear
It washes, comprising:
The sample silicon wafer is placed in the mixed vapour of nitric acid and hydrofluoric acid, the surface of the sample silicon wafer is cleaned.
3. processing analysis method according to claim 1, which is characterized in that further comprising the steps of:
Hydrofluoric acid solution and evaporation drying are added into the sample silicon wafer treatment fluid, obtains the first processing sample；
The first processing sample is added in aqueous solution of nitric acid and obtains measurement solution；
Detect the heavy metal in the measurement solution.
4. a kind of processing unit of silicon wafer characterized by comprising
Container, define in the container for accommodate include nitric acid solution and hydrofluoric acid solution mixed solution first chamber
The second chamber being connected to with the first chamber；
Heating mechanism, for heating the mixed solution in the first chamber, so that the mixed solution evaporates to form nitre
Acid and hydrofluoric acid mixed vapour and the mixed vapour be able to enter the second chamber；
Sample box, the sample box are placed in the second chamber with for containing sample silicon wafer, and the mixed vapour can be into
Enter in the sample box so that the sample silicon wafer dissolves in the mixed vapour.
5. processing unit according to claim 4, which is characterized in that the container is that outside is coated with polytetrafluoroethylene (PTFE)
Metal material or ceramic material container, the heating mechanism include mantle heater, and the mantle heater is set in the appearance
The outside of device.
6. processing unit according to claim 4, which is characterized in that the container is column, and the first chamber is located at
The bottom of the container, the second chamber are located at the top of the container, and columnar gas-guide tube is equipped in the container, described
The open communication of one end of gas-guide tube and the first chamber, the other end of the gas-guide tube protrude into the second chamber and with institute
State second chamber connection, the axis collinear of the axis of the gas-guide tube and the container.
7. processing unit according to claim 6, which is characterized in that be respectively equipped on the container and the second chamber
The air inlet and air outlet of connection, the air inlet and axisymmetrical of the gas outlet about the container, second chamber
The position of the neighbouring air inlet and the gas outlet is respectively equipped with the porous plate for having through-hole in room, and two described porous
Axisymmetrical of the plate about the container, the quantity of the sample box are multiple and are respectively placed on the corresponding porous plate.
8. processing unit according to claim 7, which is characterized in that further include:
Two thermometers, two thermometers are all set in the second chamber, one of them described thermometer is located at institute
The top of gas-guide tube is stated, another described thermometer is located at the top of the porous plate of the neighbouring gas outlet.
9. processing unit according to claim 7, which is characterized in that further include:
Inert gas feeding mechanism, the inert gas feeding mechanism is connected to the air inlet, into the second chamber
It is passed through inert gas.
10. processing unit according to claim 9, which is characterized in that the inert gas feeding mechanism and the air inlet
It is equipped with connecting tube between mouthful to be connected to the inert gas feeding mechanism and the air inlet, is respectively equipped with stream in the connecting tube
Meter and filter.
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