CN101339901A - Oxide film on wafer surface removing process and apparatus - Google Patents
Oxide film on wafer surface removing process and apparatus Download PDFInfo
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- CN101339901A CN101339901A CNA2007101182219A CN200710118221A CN101339901A CN 101339901 A CN101339901 A CN 101339901A CN A2007101182219 A CNA2007101182219 A CN A2007101182219A CN 200710118221 A CN200710118221 A CN 200710118221A CN 101339901 A CN101339901 A CN 101339901A
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- oxide film
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- silicon chip
- hydrofluoric acid
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Abstract
A technique and a device used for removing an oxide film on the surface of a wafer; the technique comprises the steps that in a reaction chamber of the device used for removing the oxide film on the surface of the wafer, the side of a silicon chip the oxide film on the surface of which is to be removed just faces hydrofluoric acid gas which is controlled by a bubbling gas valve, and the other side of the silicon chip needing to be protected just faces protective gas; after the removing operation is carried out, and then the samples are detected; the device comprises an operation stink cupboard, a hydrofluoric acid gas generator, a transport unit of the protective gas, a reaction chamber and a hydrofluoric acid gas transport channel. The technique and the device of the invention has the advantages of low equipment cost, short manufacturing cycle, small occupying space of the equipment, low processing cost of the products, good effect of the silicon chip on removing the oxide film and being capable of satisfying the requirements of design.
Description
Technical field
The present invention relates to technology and the device of a kind of removal, the removal technology and the device of the surface film oxide of the wafer of the silicon dioxide on particularly a kind of inclined-plane of the chamfering that needs to keep the one side of silicon chip and be attached thereto as the surface film oxide of the wafer of silicon epitaxy substrate.
Technical background
Epitaxial wafer is one of basic material of producing integrated circuit, and in recent years, the demand of the backing material (heavy doping silicon chip) that the production epitaxial wafer is used is increasing.For preventing that the heavily doped silicon epitaxial wafer from causing the outdiffusion and the autodoping of impurity in process of production, often need the counterweight doped silicon wafer to carry on the back envelope and handle.According to the different technologies requirement of wafer, there is epitaxial wafer requirement backing material back of the body envelope to need with TEOS (tetraethoxysilane) LPCVD (low-pressure chemical vapor deposition) growth SiO
2Oxide-film, and require not remove edge oxide-film (comprising the front fillet surface).
The method of existing removal oxide film on wafer surface has: chemical mechanical polishing (CMP), wet etching, dry etching.
CMP (Chemical Mechanical Polishing) process: the silicon chip that will remove surface film oxide is put on the polishing machine, use chemistry and theory of mechanics silicon dioxide jettisoning with the silicon chip front surface, to reach the purpose of removing oxide film on wafer surface, the advantage of this method is silicon dioxide can be removed totally, shortcoming is processing cost too high (equipment and a technology cost height), and working (machining) efficiency is too low.
Wet-etching technology: utilize to make the photoetching process in the integrated circuit technology, the part that silicon chip is not needed to remove protects with photoresist, and the removal method that silicon chip is put in the aqueous solution of hydrofluoric acid and ammonium fluoride is wet etching.Equipment and photoresist that the method must have photoetching to use, and need expend a large amount of acid solutions, polluting greatly, the cost height also damages crystal column surface easily, and the mounting rate of finished products is carried on the back in influence.
Dry etch process: also be the photoetching process of utilize making in the integrated circuit technology, be divided into four kinds of plasma etchings, reactive ion etching, ion beam etching, hydrofluoric acid vapor etch.Though rate of finished products improves, owing to still adopt lithographic equipment, photoresist and plasma etching device, the flow process complexity, processing cost is higher, and efficient is also lower.
Though said method technical maturity, processing cost are too high, working (machining) efficiency is lower, and therefore normally a slice a slice processing be necessary to provide a kind of removal technology and device of novel oxide film on wafer surface.
Summary of the invention
The purpose of this invention is to provide a kind of removal technology and device of oxide film on wafer surface, this technological process is simple, and is easy to operate, the efficient height, and the technology cost is low; Install easyly, equipment cost is low.
For achieving the above object, the present invention takes following design:
A kind of oxide film on wafer surface is removed technology; it is included in the reative cell of oxide film on wafer surface removal device; remove the side of surface film oxide over against hydrofluoric acid gas with waiting in the silicon chip by the bubbling Air Valve Control; the another side of the silicon chip that needs protection is over against protective gas; after treating that removal is finished, again sample is detected.
The oxide-film of the hydrofluoric acid gas corrosion wafer front surface in the reative cell, wafer rear can not corroded by hydrofluoric acid owing to the existence of protective gas.
This oxide film on wafer surface removal device, it comprises that (operational environment is put and provided to this wind kitchen in the oxide-film removal device to operation wind cupboard.), (this gas generator is used to produce hydrofluoric acid gas to the hydrofluoric acid gas generator.); (pipeline of this logical hydrofluoric acid gas is used for hydrofluoric acid gas is transported to reative cell the hydrofluoric acid gas conveying pipe; with reacted air scavenge reative cell); the protective gas conveyer; (this protective gas conveyer is used to supply the silicon dioxide of the silicon chip that protective atmosphere needs protection with protection, and device comprises source of the gas or generator, pipeline, valve.), reative cell, this reative cell is used to put the silicon chip of processing, finishes silicon chip processing.
Load structure in the reative cell is to use the film trap consistent with the silicon chip specification, is the protective gas air cavity under the film trap, and protection gas and silicon dioxide do not have chemical reaction in the air cavity.Air cavity can be made up big and down small horn mouth structure.
Advantage of the present invention is:
1, equipment cost is low, and the manufacturing cycle is short.
2, the product processing cost is low.
3, equipment occupation space is little.
4, the removal oxide-film of silicon chip is effective, can meet design requirement.
Description of drawings
Fig. 1: be the process frame chart of removal surface film oxide of the present invention
Fig. 2: be gas flow path figure in the device
Fig. 3: be the reaction chamber structure schematic diagram
Fig. 4 a: reative cell master cutaway view
Fig. 4 b: Fig. 4 a vertical view
The represented process sequence of Fig. 1 is: film releasing, regulate the protection air valve, and open the protection air valve, close Close reative cell, regulate the hydrofluoric acid air valve, open the bubbler valve, hydrofluoric acid gas corrosion chip oxide film, Close the bubbling air valve, open dry air valve, close gas check valve, take out silicon chip, detect wafer surface oxidation Film.
Among Fig. 2, hydrofluoric acid gas generator and air generator (protective gas generator) are arranged, also have A plurality of valves, the valve that is connected with air generator has: air valve 1,2,3,4,5. With HF gas The valve that generator connects has: air valve 6,7.
Among Fig. 3,8 is silicon chip, and 9 is sealing ring, and 10 is lower cover, and 11 is loam cake.
Fig. 4 a, the described reative cell of Fig. 4 b comprise: reative cell is divided into up and down two parts, establishes the film trap consistent with the silicon chip format diameter in the reative cell, and two partly with the sealing ring sealing up and down, and HF and N are established in top2Gaseous mixture (the Air generator is N2Storage tank) is the protective gas air cavity under the import, film trap, can be Bell-mouth structure of air.
Embodiment
The thickness of used silicon dioxide film is 8000 dusts in the present embodiment, in order to remove the silicon dioxide film that the place to go is wanted in requirement, silicon chip is in equipment of the present invention, under the situation that the HF acid gas is arranged, regulate HF acid vapor valve, make this sour gas flow reach can corrode fastest under the prerequisite of the quality that does not influence silicon chip, general speed is controlled at 250-750A °/MIN, and the time that this experiment HF acid stops is 27 minutes.The film that the nitrogen amount that passes through in the HF acid bubbler will be protected with silicon chip is not spent and is as the criterion.Regulate the nitrogen amount of bubbler and the size of regulating HF acid vapor valve, the processing step that experiment is adopted is as follows:
With waiting to remove in the film trap of silicon chip alignment function platform protection air cavity of surface film oxide, open protection air valve 2,3, regulate protection air valve 2,3, bubbling air valve 1 is opened in the off-response chamber, regulates hydrofluoric acid air valve 6,7; Observe the removal situation of front surface oxide-film, after removal is finished, close bubbling air valve 1, open dry air valve 4,5; After several minutes, close gas check valve 4,5, close gas check valve 2,3, take out silicon chip, detect oxide film on wafer surface.The inspection of converted products mainly is visual inspection, and test item comprises: whether the silicon dioxide film that requires to remove is removed totally.Whether the silicon dioxide film of protection is complete.
The oxide-film of the hydrofluoric acid gas corrosion wafer front surface in the reative cell, wafer rear can not corroded by hydrofluoric acid owing to the existence of protective gas.In order to protect the safety of bubbler, slowly open the bubbling air valve.
Claims (5)
1, a kind of oxide film on wafer surface is removed technology; it is characterized in that: this technology is: in the reative cell of oxide film on wafer surface removal device; remove the side of surface film oxide over against hydrofluoric acid gas with waiting in the silicon chip by the bubbling Air Valve Control; the another side of the silicon chip that needs protection is over against protective gas; after treating that removal is finished, again sample is detected.
2, a kind of oxide film on wafer surface according to claim 1 is removed technology, and it is characterized in that: described processing step is:
(1) will wait to remove in the film trap of silicon chip alignment function platform protection air cavity of surface film oxide;
(2) open the protection air valve, regulate the protection air valve;
(3) the bubbling air valve is opened in off-response chamber, regulates the hydrofluoric acid air valve, makes hydrofluoric acid gas corrosion chip oxide film;
(4) the removal situation of observation front surface oxide-film after removal is finished, is closed the bubbling air valve;
(5) open dry air valve; After several minutes, close gas check valve, take out silicon chip, detect oxide film on wafer surface.
3, a kind of oxide film on wafer surface removal device, it comprises operation wind cupboard, hydrofluoric acid gas generator, protective gas conveyer, reative cell, hydrofluoric acid gas conveying pipe.
4, a kind of oxide film on wafer surface removal device according to claim 3 is characterized in that: described reative cell is divided into two parts up and down, is provided with the film trap consistent with the silicon chip format diameter in the reative cell, and two partly with the sealing ring sealing up and down, and HF and N are established in top
2The import of gaseous mixture, be the protective gas air cavity under the film trap.
5, a kind of oxide film on wafer surface removal device according to claim 4 is characterized in that the protective gas air cavity is up big and down small horn mouth structure in the described reative cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101182219A CN101339901A (en) | 2007-07-02 | 2007-07-02 | Oxide film on wafer surface removing process and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101182219A CN101339901A (en) | 2007-07-02 | 2007-07-02 | Oxide film on wafer surface removing process and apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101339901A true CN101339901A (en) | 2009-01-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101182219A Pending CN101339901A (en) | 2007-07-02 | 2007-07-02 | Oxide film on wafer surface removing process and apparatus |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569020A (en) * | 2010-12-10 | 2012-07-11 | 有研半导体材料股份有限公司 | Method and device for removing cut oxidation films of 8-inch wafers |
| CN103855062A (en) * | 2012-11-30 | 2014-06-11 | 有研半导体材料股份有限公司 | Novel silicon wafer bearing device applied to wafer silicon dioxide back sealing membrane growth process, and growth method |
| CN104278275A (en) * | 2013-07-08 | 2015-01-14 | 中国振华集团永光电子有限公司 | Silicon chip wet-etching method |
| CN106298586A (en) * | 2015-06-04 | 2017-01-04 | 有研半导体材料有限公司 | A kind of silicon chip surface HF acid treatment system |
| CN109830435A (en) * | 2019-02-01 | 2019-05-31 | 天津中环领先材料技术有限公司 | A kind of device and method removing silicon chip surface silicon dioxide film |
-
2007
- 2007-07-02 CN CNA2007101182219A patent/CN101339901A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569020A (en) * | 2010-12-10 | 2012-07-11 | 有研半导体材料股份有限公司 | Method and device for removing cut oxidation films of 8-inch wafers |
| CN102569020B (en) * | 2010-12-10 | 2015-01-14 | 有研新材料股份有限公司 | Method and device for removing cut oxidation films of 8-inch wafers |
| CN103855062A (en) * | 2012-11-30 | 2014-06-11 | 有研半导体材料股份有限公司 | Novel silicon wafer bearing device applied to wafer silicon dioxide back sealing membrane growth process, and growth method |
| CN104278275A (en) * | 2013-07-08 | 2015-01-14 | 中国振华集团永光电子有限公司 | Silicon chip wet-etching method |
| CN106298586A (en) * | 2015-06-04 | 2017-01-04 | 有研半导体材料有限公司 | A kind of silicon chip surface HF acid treatment system |
| CN109830435A (en) * | 2019-02-01 | 2019-05-31 | 天津中环领先材料技术有限公司 | A kind of device and method removing silicon chip surface silicon dioxide film |
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Open date: 20090107 |