CN104278275A - Silicon chip wet-etching method - Google Patents
Silicon chip wet-etching method Download PDFInfo
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- CN104278275A CN104278275A CN201310285289.1A CN201310285289A CN104278275A CN 104278275 A CN104278275 A CN 104278275A CN 201310285289 A CN201310285289 A CN 201310285289A CN 104278275 A CN104278275 A CN 104278275A
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Abstract
The invention discloses a silicon chip wet-etching method. The silicon chip wet-etching method can be operated simply and can effectively prevent generation of redundant etched zones on the back surface of a silicon chip. The outer surface of the silicon chip has an oxidation layer, the silicon chip surface of which the oxidation layer is removed by wet-etching is used as a front surface and the silicon chip surface opposite to the front surface is used as a back surface. The silicon chip wet-etching method comprises the following steps of a, arranging the silicon chip in the way that the front surface faces down and contacts with a corrosion solution, and injecting gas with stable properties to the back surface of the silicon chip from above the silicon chip, and b, after a certain reaction time, taking out the silicon chip and cleaning the silicon chip by water for next use. The silicon chip wet-etching method can effectively prevent generation of an etched zone on the back surface of the silicon chip so that the silicon chip satisfies technical requirements, and has simple processes and a low silicon chip processing cost.
Description
Technical field
The present invention relates to silicon chip processing technique field, especially relate to a kind of wet etching method of silicon chip.
Background technology
Wet etching is a pure chemical reaction process, refers to utilize the chemical reaction between etchant solution and pre-etachable material to remove part that not masked mould material shelters and reaches etching object.It has excellent selectivity, and having etched current film will stop, and can not damage the film of one deck other materials below.Wet etching is extensive application in the technique such as abrasive disc, polishing, cleaning of semi-conductor.
At present, due to production engineering specifications, need prepare the back side has the silicon chip of protect oxide layer (the silicon chip face that need remove zone of oxidation by wet etching is front, and face is the back side in contrast).And when preparing the silicon chip of back side attachment zone of oxidation, the front and back of silicon chip all grown zone of oxidation, just needs the zone of oxidation being got rid of front by wet etching treatment, retains backside oxide layer, realizes the requirement of technological design to silicon chip simultaneously.In the process of zone of oxidation removing front side of silicon wafer, the gas due to etchant solution volatilization arrives the zone of oxidation at this edge of edge corrosion of silicon chip back side, causes the zone of oxidation of dorsal edge also to receive corrosion to a certain degree, does not meet the processing requirement of product.
Summary of the invention
Instant invention overcomes shortcoming of the prior art, provide a kind of wet etching method of silicon chip simple to operate.The method can effectively prevent the back side of silicon chip from producing unnecessary etched area.
In order to solve the problems of the technologies described above, the present invention is achieved by the following technical solutions: a kind of wet etching method of silicon chip, and the outside surface of silicon chip has zone of oxidation, and the face that silicon chip need remove zone of oxidation by wet etching is front, face is the back side in contrast, and the method comprises the following steps:
A the face down of silicon chip is placed and is contacted with etchant solution by (), and spray the gas of stable in properties from its back side, upper direction of silicon chip;
B (), through certain reaction times, is taken out silicon chip water and is rinsed well, for subsequent use.
Preferably, the etchant solution in described step (a) is hydrofluoric acid.
Preferably, the gas in described step (a) is nitrogen.
Preferably, the gas in described step (a) is dry air.
Preferably, the gas in described step (a) is from the upper vertical Jet with downward flow direction at silicon chip center to the back side of silicon chip.
Preferably, the reaction times of described step (b) is 3 minutes.
Compared with prior art, tool of the present invention has the following advantages:
(1) this invention is by spraying the gas of stable in properties from its back side, upper direction of silicon chip, scatter along the surface of silicon chip to surrounding after gas arrives the surface (back side) of silicon chip and come, the gas preventing etchant solution from volatilizing arrives the zone of oxidation at this edge of edge corrosion of silicon chip back side.
(2) the present invention is simple to operate, and the tooling cost of silicon chip is low.While guaranteeing that front side of silicon wafer zone of oxidation is thoroughly removed, the backside oxide layer of silicon chip can also be well protected not corroded, practical, effective.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic diagram of an embodiment of silicon chip wet etching in prior art;
Fig. 2 is the schematic diagram of its backside oxide layer after employing existing method processing silicon chip;
Fig. 3 is the schematic diagram of one embodiment of the present of invention;
Fig. 4 is the schematic diagram of its backside oxide layer after employing method processing of the present invention silicon chip.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Figure 1 shows that the schematic diagram of an embodiment of silicon chip wet etching in prior art, the front (need remove the face of zone of oxidation) of silicon chip 1 is placed down, etchant solution is adsorbed on the pad 3 that filter paper makes, and the front of silicon chip 1 fully contacts the removal into shape zone of oxidation with the upper surface of pad 3; Because the gas 4 of the volatilization of etchant solution is understanding the edge contact with silicon chip 1 backside oxide layer 2 in the process risen, react with the edge of the backside oxide layer 2 of silicon chip 1, destroy the backside oxide layer 2 of silicon chip 1, the backside oxide layer 2 of the silicon chip 1 after processing by prior art as shown in Figure 2.
Embodiment 1:
Figure 3 shows that the schematic diagram of one embodiment of the present of invention, adopt method of the present invention to carry out silicon chip wet etching and comprise the following steps:
A the face down of silicon chip 1 is placed and is contacted with etchant solution by (), and spray the gas 5 of stable in properties from its back side, upper direction of silicon chip 1; Etchant solution adopts hydrofluoric acid, and gas adopts the nitrogen of stable in properties.In order to make the gas 5 of injection come along the surface of silicon chip 1 to surrounding is evenly wandering, reducing gas 5 consumption simultaneously, preferably adopting gas 5 from the upper vertical Jet with downward flow direction at silicon chip 1 center to the back side of silicon chip 1.
B (), through the reaction times of 3 minutes, is taken out silicon chip water and is rinsed well, for subsequent use.
When adopting aforesaid method processing silicon chip 1, the gas 4 volatilized from etchant solution is in the process toward rising, directly injected gas 5 is along the surface of silicon chip 1 to the surrounding evenly wandering blowing come, can not with the edge contact of silicon chip 1 backside oxide layer 2, substantially there is not corrosion in backside oxide layer 2 edge of silicon chip 1, profile is complete.Adopt the backside oxide layer 2 of the silicon chip 1 after the present invention's processing as shown in Figure 4.
Embodiment 2: the gas 5 that the present embodiment sprays adopts dry air.All the other are identical with embodiment 1.
Adopt backside oxide layer 2 edge of the silicon chip 1 of aforesaid method processing substantially to there is not corrosion, profile is complete.
Embodiment 3: the reaction times of the present embodiment is 5 minutes, and all the other are identical with embodiment 1.
Adopt backside oxide layer 2 edge of the silicon chip 1 of aforesaid method processing substantially to there is not corrosion, profile is complete.
Embodiment 4: the reaction times of the present embodiment is 10 minutes, and all the other are identical with embodiment 1.
Adopt backside oxide layer 2 edge of the silicon chip 1 of aforesaid method processing substantially to there is not corrosion, profile is complete.
This invention is by spraying the gas of stable in properties from its back side, upper direction of silicon chip, scatter along the surface of silicon chip 1 to surrounding after gas arrives the backside oxide layer 2 of silicon chip 1 and come, the gas 4 preventing etchant solution from volatilizing arrives this edge of edge corrosion of silicon chip 1 backside oxide layer 2.The method is simple to operate, and the tooling cost of silicon chip is low.While guaranteeing that silicon chip 1 frontside oxide layer is thoroughly removed, the backside oxide layer 2 of silicon chip 1 can also be well protected not corroded, practical, effective.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a wet etching method for silicon chip, the outside surface of silicon chip has zone of oxidation, and the face that silicon chip need remove zone of oxidation by wet etching is front, and face is the back side in contrast, it is characterized in that: the method comprises the following steps:
A the face down of silicon chip is placed and is contacted with etchant solution by (), and spray the gas of stable in properties from its back side, upper direction of silicon chip;
B (), through certain reaction times, is taken out silicon chip water and is rinsed well, for subsequent use.
2. the wet etching method of silicon chip according to claim 1, is characterized in that: the etchant solution in described step (a) is hydrofluoric acid.
3. the wet etching method of silicon chip according to claim 1, is characterized in that: the gas in described step (a) is nitrogen.
4. the wet etching method of silicon chip according to claim 1, is characterized in that: the gas in described step (a) is dry air.
5. the wet etching method of silicon chip according to any one of claim 1-4, is characterized in that: the gas in described step (a) is from the upper vertical Jet with downward flow direction at silicon chip center to the back side of silicon chip.
6. the wet etching method of silicon chip according to any one of claim 1-4, is characterized in that: the reaction times of described step (b) is 3 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310285289.1A CN104278275A (en) | 2013-07-08 | 2013-07-08 | Silicon chip wet-etching method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310285289.1A CN104278275A (en) | 2013-07-08 | 2013-07-08 | Silicon chip wet-etching method |
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| CN104278275A true CN104278275A (en) | 2015-01-14 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108172661A (en) * | 2017-12-26 | 2018-06-15 | 温州市赛拉弗能源有限公司 | A kind of solar battery sheet production technology |
| CN109378364A (en) * | 2018-12-03 | 2019-02-22 | 江苏中宇光伏科技有限公司 | The etching trimming technique of silicon wafer in a kind of production of solar battery sheet |
| CN111710596A (en) * | 2020-07-23 | 2020-09-25 | 华虹半导体(无锡)有限公司 | Method for manufacturing back-sealed silicon wafer |
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| CN201311920Y (en) * | 2008-12-09 | 2009-09-16 | 北京有色金属研究总院 | Wafer surface oxide film removing device |
| CN102011125A (en) * | 2010-09-19 | 2011-04-13 | 电子科技大学 | Metal wet etching device and process for preparing MEMS structure |
| CN102479676A (en) * | 2010-11-29 | 2012-05-30 | 上海华虹Nec电子有限公司 | Deep groove etching method |
| CN102560686A (en) * | 2012-03-08 | 2012-07-11 | 英利能源（中国）有限公司 | Wet etching method for silicon chip and method for producing solar cell |
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2013
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101339901A (en) * | 2007-07-02 | 2009-01-07 | 北京有色金属研究总院 | Oxide film on wafer surface removing process and apparatus |
| CN201311920Y (en) * | 2008-12-09 | 2009-09-16 | 北京有色金属研究总院 | Wafer surface oxide film removing device |
| CN102011125A (en) * | 2010-09-19 | 2011-04-13 | 电子科技大学 | Metal wet etching device and process for preparing MEMS structure |
| CN102479676A (en) * | 2010-11-29 | 2012-05-30 | 上海华虹Nec电子有限公司 | Deep groove etching method |
| CN102560686A (en) * | 2012-03-08 | 2012-07-11 | 英利能源（中国）有限公司 | Wet etching method for silicon chip and method for producing solar cell |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108172661A (en) * | 2017-12-26 | 2018-06-15 | 温州市赛拉弗能源有限公司 | A kind of solar battery sheet production technology |
| CN109378364A (en) * | 2018-12-03 | 2019-02-22 | 江苏中宇光伏科技有限公司 | The etching trimming technique of silicon wafer in a kind of production of solar battery sheet |
| CN109378364B (en) * | 2018-12-03 | 2021-06-04 | 江苏中宇光伏科技有限公司 | Etching and edge removing process for silicon wafer in solar cell production |
| CN111710596A (en) * | 2020-07-23 | 2020-09-25 | 华虹半导体(无锡)有限公司 | Method for manufacturing back-sealed silicon wafer |
| CN111710596B (en) * | 2020-07-23 | 2022-09-30 | 华虹半导体(无锡)有限公司 | Method for manufacturing back-sealed silicon wafer |
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Application publication date: 20150114 |