CN109378364A - The etching trimming technique of silicon wafer in a kind of production of solar battery sheet - Google Patents
The etching trimming technique of silicon wafer in a kind of production of solar battery sheet Download PDFInfo
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- CN109378364A CN109378364A CN201811468315.3A CN201811468315A CN109378364A CN 109378364 A CN109378364 A CN 109378364A CN 201811468315 A CN201811468315 A CN 201811468315A CN 109378364 A CN109378364 A CN 109378364A
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- silicon wafer
- etching
- solar battery
- battery sheet
- drying
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 111
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 111
- 239000010703 silicon Substances 0.000 title claims abstract description 111
- 238000005530 etching Methods 0.000 title claims abstract description 35
- 238000009966 trimming Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 52
- 238000005498 polishing Methods 0.000 claims abstract description 38
- 238000001035 drying Methods 0.000 claims abstract description 33
- 239000012530 fluid Substances 0.000 claims abstract description 26
- 239000000243 solution Substances 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims abstract description 14
- 239000008367 deionised water Substances 0.000 claims abstract description 11
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 11
- 238000002347 injection Methods 0.000 claims abstract description 11
- 239000007924 injection Substances 0.000 claims abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 239000007921 spray Substances 0.000 claims abstract description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 23
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 20
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 15
- 239000011259 mixed solution Substances 0.000 claims description 15
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- 239000000654 additive Substances 0.000 claims description 10
- 230000000996 additive effect Effects 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 10
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 6
- 229960003975 potassium Drugs 0.000 claims description 6
- 229910052700 potassium Inorganic materials 0.000 claims description 6
- 239000011591 potassium Substances 0.000 claims description 6
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 5
- AZFNGPAYDKGCRB-XCPIVNJJSA-M [(1s,2s)-2-amino-1,2-diphenylethyl]-(4-methylphenyl)sulfonylazanide;chlororuthenium(1+);1-methyl-4-propan-2-ylbenzene Chemical compound [Ru+]Cl.CC(C)C1=CC=C(C)C=C1.C1=CC(C)=CC=C1S(=O)(=O)[N-][C@@H](C=1C=CC=CC=1)[C@@H](N)C1=CC=CC=C1 AZFNGPAYDKGCRB-XCPIVNJJSA-M 0.000 claims description 5
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 claims description 5
- 239000004304 potassium nitrite Substances 0.000 claims description 5
- 235000010289 potassium nitrite Nutrition 0.000 claims description 5
- 238000011001 backwashing Methods 0.000 claims description 4
- 239000001508 potassium citrate Substances 0.000 claims description 4
- 229960002635 potassium citrate Drugs 0.000 claims description 4
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 claims description 4
- 235000011082 potassium citrates Nutrition 0.000 claims description 4
- 230000035484 reaction time Effects 0.000 claims description 4
- DNXHEGUUPJUMQT-CBZIJGRNSA-N Estrone Chemical compound OC1=CC=C2[C@H]3CC[C@](C)(C(CC4)=O)[C@@H]4[C@@H]3CCC2=C1 DNXHEGUUPJUMQT-CBZIJGRNSA-N 0.000 claims 1
- 150000002148 esters Chemical class 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910000632 Alusil Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 101000760175 Homo sapiens Zinc finger protein 35 Proteins 0.000 description 1
- 102100024672 Zinc finger protein 35 Human genes 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses the etching trimming techniques of silicon wafer in a kind of production of solar battery sheet, it is rinsed before etching using each surface of the deionized water to silicon wafer, and dry tack free is carried out to silicon wafer, silicon chip surface drying mode is drying or drying, the face down of silicon wafer is placed when etching and is contacted with etchant solution, etchant solution is hydrofluoric acid, and the gas stable from its back side of the upper direction of silicon wafer injection property, injection gas is nitrogen, after etching trimming terminates, silicon chip back side is polished using polishing fluid.The etching trimming technique of silicon wafer in solar battery sheet production, sprays nitrogen to silicon chip back side, can shield to silicon chip back side oxide layer, increased polishing step after etching can make silicon wafer more smooth, improve the transfer efficiency of battery.
Description
Technical field
The invention belongs to silicon chip erosion technical fields, and in particular to the etching of silicon wafer is gone in a kind of production of solar battery sheet
Side technique.
Background technique
Currently, the silicon wafer that the back side has oxide layer to protect need to be prepared due to production engineering specifications.And adhere to oxygen at the preparation back side
When changing the silicon wafer of layer, the front and back of silicon wafer grown oxide layer, it is necessary to get rid of front by wet etching treatment
Oxide layer, while retaining backside oxide layer, to realize requirement of the technological design to silicon wafer.
During removing the oxide layer of front side of silicon wafer, since the gas of etchant solution volatilization reaches the side of silicon chip back side
Edge corrodes the oxide layer at the edge, causes the oxide layer of dorsal edge also to receive a degree of corrosion, does not meet product
Technique requirement, silicon chip back side are also often coarse not plane, this is for needing good back reflection, to the long-wave band in sunlight
The absorption of spectrum and the combination of subsequent alusil alloy and silicon body are unfavorable.
Summary of the invention
It is existing to make up the object of the present invention is to provide the etching trimming technique of silicon wafer in a kind of production of solar battery sheet
The deficiency of technology.
To solve the above problems, the technical solution adopted by the present invention are as follows: the quarter of silicon wafer in a kind of production of solar battery sheet
Etching off side technique, comprising the following steps:
S1, rinse is carried out using each surface of the mixed solution of hydrofluoric acid and nitric acid to silicon wafer；
S2, each surface of the silicon wafer obtained using deionized water to step S1 are rinsed；
S3, the silicon wafer for obtaining step S2 carry out dry tack free, and silicon chip surface drying mode is drying or drying；
S4, the side of the obtained silicon wafer of step S3 and the back side are carried out using the mixed solution of hydrofluoric acid, nitric acid and sulfuric acid
Etching；
S5, it is rinsed using each surface of the deionized water to the obtained silicon wafer of step S4, and surface is carried out to silicon wafer
Dry, silicon chip surface drying mode is drying or drying；
S6, the face down placement of silicon wafer is contacted with etchant solution, and sprays property from its back side of the upper direction of silicon wafer
Stable gas takes out silicon wafer and is rinsed with water completely by certain reaction time；
S7, etching trimming terminate after, silicon chip back side is polished using polishing fluid.
Preferably, in step S1, the mass concentration percentage of hydrofluoric acid and nitric acid in the mixed solution of hydrofluoric acid and nitric acid
For 5:1-10:1.
Preferably, each surface of the silicon wafer obtained after diffusion section is carried out in independent slot-type device in step S1
Rinse, the time of rinse are less than 10s, have multiple idler wheels, side of the silicon wafer obtained after diffusion section to float in slot-type device
Formula passes through slot-type device.
Preferably, each surface of silicon wafer is rinsed in chain equipment or slot-type device in step S2, flushing side
Formula is spray or rinse.
Preferably, etchant solution is hydrofluoric acid in step S6, and injection gas is nitrogen, reaction time 2-3min.
Preferably, its component includes: HF0.5%-10%, HNO to polishing fluid by mass percentage in step S735%-
55%, H2SO45%-55%, acetic acid 5%-30%.
Preferably, also contain additive in step S7 in polishing fluid, additive includes ammonium fluoride, potassium nitrite, citric acid
One or more of potassium and lauryl alcohol sulfuric ester potassium, content accounts for the 5-15% of polishing fluid gross mass.
Preferably, the temperature of polishing fluid is 5-25 DEG C when polishing in step S7, polishing time 4min-10min.
Technical effect and advantage of the invention: the etching trimming technique of silicon wafer in solar battery sheet production is carrying out
Nitrogen is sprayed to silicon chip back side when etching, the gas that can prevent etchant solution from volatilizing carries out the edge oxide layer of silicon chip back side
Corrosion, shields to silicon chip back side oxide layer, increased polishing step after etching can make silicon wafer more light
It is sliding, reinforce the absorption to the long-wave band spectrum in sunlight, and then increase the utilization and conversion of luminous energy, while the smooth back side has
Conducive to the combination of subsequent alusil alloy and silicon wafer, the transfer efficiency of battery is improved.
Specific embodiment
Technical solution of the present invention is further elaborated below with reference to embodiment:
Embodiment 1
The etching trimming technique of silicon wafer in a kind of production of solar battery sheet, comprising the following steps:
S1, using the mixed solution of hydrofluoric acid and nitric acid in independent slot-type device to diffusion section after obtained silicon wafer
Each surface carry out rinse, the mass concentration percentage of hydrofluoric acid and nitric acid is 5:1 in the mixed solution of hydrofluoric acid and nitric acid,
The time of rinse is less than 10s, has multiple idler wheels in slot-type device, and the silicon wafer obtained after diffusion section is passed through in a manner of floating
Slot-type device；
S2, each surface for obtaining silicon wafer step S1 is rushed in chain equipment or slot-type device using deionized water
It washes, backwashing manner is spray or rinse；
S3, the silicon wafer for obtaining step S2 carry out dry tack free, and silicon chip surface drying mode is drying or drying；
S4, the side of the obtained silicon wafer of step S3 and the back side are carried out using the mixed solution of hydrofluoric acid, nitric acid and sulfuric acid
Etching；
S5, it is rinsed using each surface of the deionized water to the obtained silicon wafer of step S4, and surface is carried out to silicon wafer
Dry, silicon chip surface drying mode is drying or drying；
S6, it the face down of silicon wafer is placed is contacted with etchant solution, etchant solution is hydrofluoric acid, and from the top of silicon wafer
The gas stable to its back side injection property, injection gas is nitrogen, by 2min, takes out silicon wafer and is rinsed with water completely；
S7, etching trimming terminate after, silicon chip back side is polished using polishing fluid, polishing fluid is by mass percentage
Counting its component includes: HF0.5%, HNO35%, H2SO45%, acetic acid 5% also contains additive in polishing fluid, and additive includes
One or more of ammonium fluoride, potassium nitrite, potassium citrate and lauryl alcohol sulfuric ester potassium, content accounts for polishing fluid gross mass
5%, the temperature of polishing fluid is 5 DEG C when polishing, polishing time 4min.
Embodiment 2
The etching trimming technique of silicon wafer in a kind of production of solar battery sheet, comprising the following steps:
S1, using the mixed solution of hydrofluoric acid and nitric acid in independent slot-type device to diffusion section after obtained silicon wafer
Each surface carry out rinse, the mass concentration percentage of hydrofluoric acid and nitric acid is 8:1 in the mixed solution of hydrofluoric acid and nitric acid,
The time of rinse is less than 10s, has multiple idler wheels in slot-type device, and the silicon wafer obtained after diffusion section is passed through in a manner of floating
Slot-type device；
S2, each surface for obtaining silicon wafer step S1 is rushed in chain equipment or slot-type device using deionized water
It washes, backwashing manner is spray or rinse；
S3, the silicon wafer for obtaining step S2 carry out dry tack free, and silicon chip surface drying mode is drying or drying；
S4, the side of the obtained silicon wafer of step S3 and the back side are carried out using the mixed solution of hydrofluoric acid, nitric acid and sulfuric acid
Etching；
S5, it is rinsed using each surface of the deionized water to the obtained silicon wafer of step S4, and surface is carried out to silicon wafer
Dry, silicon chip surface drying mode is drying or drying；
S6, it the face down of silicon wafer is placed is contacted with etchant solution, etchant solution is hydrofluoric acid, and from the top of silicon wafer
The gas stable to its back side injection property, injection gas is nitrogen, by 2min, takes out silicon wafer and is rinsed with water completely；
S7, etching trimming terminate after, silicon chip back side is polished using polishing fluid, polishing fluid is by mass percentage
Counting its component includes: HF5%, HNO330%, H2SO430%, acetic acid 15% also contains additive in polishing fluid, and additive includes
One or more of ammonium fluoride, potassium nitrite, potassium citrate and lauryl alcohol sulfuric ester potassium, content accounts for polishing fluid gross mass
10%, the temperature of polishing fluid is 15 DEG C when polishing, polishing time 7min.
Embodiment 3
The etching trimming technique of silicon wafer in a kind of production of solar battery sheet, comprising the following steps:
S1, using the mixed solution of hydrofluoric acid and nitric acid in independent slot-type device to diffusion section after obtained silicon wafer
Each surface carry out rinse, the mass concentration percentage of hydrofluoric acid and nitric acid is 10 in the mixed solution of hydrofluoric acid and nitric acid:
1, the time of rinse is less than 10s, has multiple idler wheels in slot-type device, and the silicon wafer obtained after diffusion section is led in a manner of floating
Cross slot-type device；
S2, each surface for obtaining silicon wafer step S1 is rushed in chain equipment or slot-type device using deionized water
It washes, backwashing manner is spray or rinse；
S3, the silicon wafer for obtaining step S2 carry out dry tack free, and silicon chip surface drying mode is drying or drying；
S4, the side of the obtained silicon wafer of step S3 and the back side are carried out using the mixed solution of hydrofluoric acid, nitric acid and sulfuric acid
Etching；
S5, it is rinsed using each surface of the deionized water to the obtained silicon wafer of step S4, and surface is carried out to silicon wafer
Dry, silicon chip surface drying mode is drying or drying；
S6, it the face down of silicon wafer is placed is contacted with etchant solution, etchant solution is hydrofluoric acid, and from the top of silicon wafer
The gas stable to its back side injection property, injection gas is nitrogen, by 3min, takes out silicon wafer and is rinsed with water completely；
S7, etching trimming terminate after, silicon chip back side is polished using polishing fluid, polishing fluid is by mass percentage
Counting its component includes: HF10%, HNO355%, H2SO455%, acetic acid 30% also contains additive, additive packet in polishing fluid
One or more of ammonium fluoride, potassium nitrite, potassium citrate and lauryl alcohol sulfuric ester potassium are included, content accounts for polishing fluid gross mass
15%, the temperature of polishing fluid is 25 DEG C when polishing, polishing time 10min.
Finally, it should be noted that the foregoing is only a preferred embodiment of the present invention, it is not intended to restrict the invention,
Although the present invention is described in detail referring to the foregoing embodiments, for those skilled in the art, still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features,
All within the spirits and principles of the present invention, any modification, equivalent replacement, improvement and so on should be included in of the invention
Within protection scope.
Claims (8)
1. the etching trimming technique of silicon wafer in a kind of solar battery sheet production, it is characterised in that: the following steps are included:
S1, rinse is carried out using each surface of the mixed solution of hydrofluoric acid and nitric acid to silicon wafer；
S2, each surface of the silicon wafer obtained using deionized water to step S1 are rinsed；
S3, the silicon wafer for obtaining step S2 carry out dry tack free, and silicon chip surface drying mode is drying or drying；
S4, the side of the obtained silicon wafer of step S3 and the back side are performed etching using the mixed solution of hydrofluoric acid, nitric acid and sulfuric acid；
S5, it is rinsed using each surface of the deionized water to the obtained silicon wafer of step S4, and dry tack free is carried out to silicon wafer,
Silicon chip surface drying mode is drying or drying；
S6, the face down placement of silicon wafer is contacted with etchant solution, and stablized from its back side of the upper direction of silicon wafer injection property
Gas take out silicon wafer and be rinsed with water completely by certain reaction time；
S7, etching trimming terminate after, silicon chip back side is polished using polishing fluid.
2. the etching trimming technique of silicon wafer in a kind of solar battery sheet production according to claim 1, it is characterised in that:
In step S1, the mass concentration percentage of hydrofluoric acid and nitric acid is 5:1-10:1 in the mixed solution of hydrofluoric acid and nitric acid.
3. the etching trimming technique of silicon wafer in a kind of solar battery sheet production according to claim 1, it is characterised in that:
Rinse, the time of rinse are carried out to each surface of the silicon wafer obtained after diffusion section in independent slot-type device in step S1
Less than 10s, there are multiple idler wheels in slot-type device, the silicon wafer obtained after diffusion section passes through slot-type device in a manner of floating.
4. the etching trimming technique of silicon wafer in a kind of solar battery sheet production according to claim 1, it is characterised in that:
Each surface of silicon wafer is rinsed in chain equipment or slot-type device in step S2, backwashing manner is spray or rinse.
5. the etching trimming technique of silicon wafer in a kind of solar battery sheet production according to claim 1, it is characterised in that:
Etchant solution is hydrofluoric acid in step S6, and injection gas is nitrogen, reaction time 2-3min.
6. the etching trimming technique of silicon wafer in a kind of solar battery sheet production according to claim 1, it is characterised in that:
Its component includes: HF0.5%-10%, HNO to polishing fluid by mass percentage in step S735%-55%, H2SO45%-
55%, acetic acid 5%-30%.
7. the etching trimming technique of silicon wafer in a kind of solar battery sheet production according to claim 1, it is characterised in that:
Also contain additive in step S7 in polishing fluid, additive includes ammonium fluoride, potassium nitrite, potassium citrate and lauryl alcohol sulfuric ester
One or more of potassium, content account for the 5-15% of polishing fluid gross mass.
8. the etching trimming technique of silicon wafer in a kind of solar battery sheet production according to claim 1, it is characterised in that:
The temperature of polishing fluid is 5-25 DEG C when polishing in step S7, polishing time 4min-10min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811468315.3A CN109378364B (en) | 2018-12-03 | 2018-12-03 | Etching and edge removing process for silicon wafer in solar cell production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811468315.3A CN109378364B (en) | 2018-12-03 | 2018-12-03 | Etching and edge removing process for silicon wafer in solar cell production |
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| Publication Number | Publication Date |
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| CN109378364A true CN109378364A (en) | 2019-02-22 |
| CN109378364B CN109378364B (en) | 2021-06-04 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6482749B1 (en) * | 2000-08-10 | 2002-11-19 | Seh America, Inc. | Method for etching a wafer edge using a potassium-based chemical oxidizer in the presence of hydrofluoric acid |
| CN102569502A (en) * | 2011-12-16 | 2012-07-11 | 合肥晶澳太阳能科技有限公司 | Wet method etching process |
| CN104278275A (en) * | 2013-07-08 | 2015-01-14 | 中国振华集团永光电子有限公司 | Silicon chip wet-etching method |
| CN106783575A (en) * | 2015-11-20 | 2017-05-31 | 茂迪(苏州)新能源有限公司 | The wet etching method of silicon chip and the production method of solar cell |
| CN108172661A (en) * | 2017-12-26 | 2018-06-15 | 温州市赛拉弗能源有限公司 | A kind of solar battery sheet production technology |
-
2018
- 2018-12-03 CN CN201811468315.3A patent/CN109378364B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6482749B1 (en) * | 2000-08-10 | 2002-11-19 | Seh America, Inc. | Method for etching a wafer edge using a potassium-based chemical oxidizer in the presence of hydrofluoric acid |
| CN102569502A (en) * | 2011-12-16 | 2012-07-11 | 合肥晶澳太阳能科技有限公司 | Wet method etching process |
| CN104278275A (en) * | 2013-07-08 | 2015-01-14 | 中国振华集团永光电子有限公司 | Silicon chip wet-etching method |
| CN106783575A (en) * | 2015-11-20 | 2017-05-31 | 茂迪(苏州)新能源有限公司 | The wet etching method of silicon chip and the production method of solar cell |
| CN108172661A (en) * | 2017-12-26 | 2018-06-15 | 温州市赛拉弗能源有限公司 | A kind of solar battery sheet production technology |
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| CN109378364B (en) | 2021-06-04 |
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