CN209119056U - Cleaning equipment for crystal silicon chip - Google Patents
Cleaning equipment for crystal silicon chip Download PDFInfo
- Publication number
- CN209119056U CN209119056U CN201822139028.XU CN201822139028U CN209119056U CN 209119056 U CN209119056 U CN 209119056U CN 201822139028 U CN201822139028 U CN 201822139028U CN 209119056 U CN209119056 U CN 209119056U
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- CN
- China
- Prior art keywords
- crystal silicon
- silicon chip
- bath
- slot
- cleaning equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 66
- 239000010703 silicon Substances 0.000 title claims abstract description 66
- 239000013078 crystal Substances 0.000 title claims abstract description 63
- 238000004140 cleaning Methods 0.000 title claims abstract description 41
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 239000002253 acid Substances 0.000 claims abstract description 9
- 238000005498 polishing Methods 0.000 claims abstract description 5
- 235000008216 herbs Nutrition 0.000 claims abstract description 3
- 210000002268 wool Anatomy 0.000 claims abstract description 3
- 230000003647 oxidation Effects 0.000 claims description 17
- 238000007254 oxidation reaction Methods 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 238000010301 surface-oxidation reaction Methods 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 230000003796 beauty Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000002560 therapeutic procedure Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Silicon Compounds (AREA)
Abstract
The utility model provides a kind of cleaning equipment for crystal silicon chip, including moisture film slot, descaling bath, alkaline bath, conversion slot and the rinse bath being arranged successively, the acid solution comprising HF is equipped in the descaling bath, to realize the cleaning of crystal silicon chip back surface；Making herbs into wool or polishing of the alkaline bath to realize crystal silicon chip back surface；HCl solution is equipped in the rinse bath, to carry out surface clean to crystal silicon chip.The utility model cleaning equipment is suitable for the manufacturing process for cleaning of novel crystal silion cell, can meet the different demands in crystal silicon chip volume production process by converting the adjustment of slot.
Description
Technical field
The utility model relates to technical field of solar cell manufacturing, in particular to a kind of cleaning for crystal silicon chip is set
It is standby.
Background technique
Solar energy is as a kind of sustainable clean energy resource having a high potential, and many countries and regions are all to the hair of photovoltaic industry
Exhibition is all paid much attention to.With the fast development of industrial technology, performance and conversion of the market for solar battery and component
Higher requirements are also raised for efficiency.For at present, crystal silicon cell and photovoltaic module still occupy the main status in market.
Cleaning equipment is the production essential equipment of crystal silicon cell, wherein preceding cleaning is mainly existed by acid, aqueous slkali
Silicon chip surface etches to form antireflective flannelette；The PN junction that cleaning is mainly used for silicon wafer periphery afterwards etches and surface BSG or PSG are clear
It washes.The method that cleaning equipment multi-pass used by manufacturing process for cleaning crosses " Overwater-floating " after existing first carries out the etching edge of silicon wafer, after
And the BSG or PSG of removal silicon chip surface are cleaned, the more difficult production for meeting novel crystal silion cell of above-mentioned cleaning equipment and technique need
It asks.Such as: n-PERT (Passivated Emitter Rear Totally-diffused cell) double-side cell needs to carry out two
Secondary phosphorus diffusion produces N+ layers, normally, needs in PN junction face reservation bsg layer to be used to that phosphorus diffusion is stopped to break PN junction as exposure mask
It is bad, and bsg layer need to be avoided to be etched by acid solution and destroyed；For another example N-topcon (tunnel oxide passivation) battery is needed in silicon chip surface system
Take oxide thin layer film, it will usually put into new production equipment, increase cost, be also unfavorable for live control.
Therefore, it is necessary to provide a kind of new cleaning equipment for crystal silicon chip.
Utility model content
The utility model aim is to provide a kind of cleaning equipment for crystal silicon chip, suitable for novel crystal silion cell
Volume production processing procedure, and can satisfy the different operation requirement of crystal silicon chip.
To realize above-mentioned purpose of utility model, the utility model provides a kind of cleaning equipment for crystal silicon chip, including
Moisture film slot, descaling bath, alkaline bath, conversion slot and the rinse bath being arranged successively, the descaling bath is interior to be equipped with the acid solution comprising HF,
To realize the cleaning of crystal silicon chip back surface；Making herbs into wool or polishing of the alkaline bath to realize crystal silicon chip back surface；It is described
HCl solution is equipped in rinse bath, to carry out surface clean to crystal silicon chip.
The conversion slot is set as oxidation trough as a further improvement of the utility model, and the oxidation trough is to realize
The back surface of crystal silicon chip aoxidizes and forms corresponding oxide layer in the back surface of the crystal silicon chip.
HNO is equipped in the oxidation trough as a further improvement of the utility model,3Solution, the HNO3The quality of solution
Concentration is set as 65~69%.
As a further improvement of the utility model, between the descaling bath and alkaline bath, between alkaline bath and oxidation trough,
Rinsing bowl is provided between oxidation trough and rinse bath.
The conversion slot is set as rinsing bowl or another rinse bath as a further improvement of the utility model, described another
HCl solution is equipped in one rinse bath.
It is set in the horizontal direction in the descaling bath, alkaline bath and conversion slot as a further improvement of the utility model,
It is equipped with the idler wheel to realize crystal silicon chip transmission.
The conversion slot and alkaline bath are provided with heating device as a further improvement of the utility model,.
The rear end of the rinse bath is also disposed with rinsing bowl and air-dries as a further improvement of the utility model,
Slot.
The beneficial effects of the utility model are: the utility model cleaning equipment is cleaned for n-PERT double-side cell, it is described
Moisture film slot can form one layer of protection moisture film on crystal silicon chip front surface, avoid acid mist, reaction drop erosion damage crystal silicon chip
The bsg layer of front surface, and the front surface local location of crystal silicon chip is also avoided to form apparent etching mark, influence beauty；Institute
State descaling bath reaction removal crystal silicon chip back surface BSG；Alkaline bath then can be polished or be formed to the back surface of crystal silicon chip
Set flannelette, then all kinds of foreign ions are removed by HCl solution cleaning.The aforementioned crystal silicon chip that cleaning is completed carries out secondary phosphorus expansion
When dissipating, front surface is protected with complete bsg layer exposure mask, and PN junction is avoided to go to pot.Except this, the conversion slot can be according to difference
Crystal silicon cell procedure for producing demand be adjusted, meet the different operation requirement of corresponding crystal silicon chip.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model cleaning equipment.
Specific embodiment
The utility model is described in detail below with reference to embodiment shown in the drawings.But the embodiment is not
Limit the utility model, structure that those skilled in the art are made according to the embodiment, method or functionally
Transformation is all contained in the protection scope of the utility model.
Join shown in Fig. 1, the cleaning equipment 100 provided by the utility model for crystal silicon chip mainly includes that front and back is successively arranged
Moisture film slot 10, descaling bath 20, alkaline bath 30, conversion slot 40 and the rinse bath 50 of column.
Herein, "front", "rear" refers to that crystal silicon chip to be processed flows through the direction of the cleaning equipment 100.The descaling bath
Rinsing bowl is provided between 20 and alkaline bath 30, between alkaline bath 30 and conversion slot 40, between conversion slot 40 and rinse bath 50
60, and the rear end of the rinse bath 50 is also disposed with rinsing bowl 60 and air-dried slot 70.
The top of the moisture film slot 10 is equipped with spray equipment, and the spray equipment is to be sprayed at crystalline silicon for deionized water
The front surface of piece simultaneously forms one layer of protection moisture film.It is equipped with the acid solution comprising HF in the descaling bath 20, to realize crystal silicon chip
The cleaning of back surface, wherein the mass concentration of HF is preferably arranged to 10~20%.It can be also added in above-mentioned acid solution suitable
HCl, in favor of the removal of crystal silicon chip back surface foreign ion.System of the alkaline bath 30 to realize crystal silicon chip back surface
Suede or polishing preferably use KOH solution or NaOH solution in the alkaline bath 30, and the alkaline bath 30 is equipped with heating device,
And it controls the solution temperature in alkaline bath 30 and is maintained at 65~80 DEG C.By concentration to above-mentioned KOH solution or NaOH solution and
Temperature is adjusted, and is cooperated different addO-on therapies, can be polished to the back surface of crystal silicon chip, is pressed down or is cleaned in crystal silicon chip
Back surface afterwards reacts again produces corresponding flannelette.
In the present embodiment, the conversion slot 40 is set as oxidation trough, back table of the oxidation trough to realize crystal silicon chip
Face aoxidizes and forms corresponding oxide layer in the back surface of the crystal silicon chip.Specifically, HNO is equipped in the oxidation trough3It is molten
Liquid, the HNO3The mass concentration of solution is set as 65~69%, can be in the back of crystal silicon chip by the oxidation susceptibility of concentrated nitric acid
Surface reaction generates one layer of ultra-thin oxide layer.It is also equipped with heating device in the oxidation trough, to above-mentioned HNO3Solution into
Row heating, accelerates reaction process.Whereby, the cleaning equipment 100 can be directly used for the quantization production of N-topcon battery, crystal
Direct oxidation obtains corresponding oxidation film layer after the back surface cleaning polishing of silicon wafer, the dirt that reduces the connecting time and may introduce
Dye；Without putting into new equipment, cost is reduced.
It is horizontally disposed in the descaling bath 20, alkaline bath 30 and conversion slot 40 to have to realize that crystal silicon chip passes
The idler wheel sent, and by way of " idler wheel is with liquid " back surface of crystal silicon chip is reacted with corresponding solution.It needs
The liquid level of solution must not exceed the positive table of crystal silicon chip in the above-mentioned descaling bath 20 of strict control, alkaline bath 30 and conversion slot 40
Face, and the stability of above-mentioned rollers operational process need to be kept.Certainly, the cleaning equipment 100 is chain equipment, the moisture film slot
10, rinse bath 50, rinsing bowl 60 and air-dried slot 70 are also equipped with corresponding idler wheel, to realize the continuous transmission of crystal silicon chip.
It is equipped with HCl solution in the rinse bath 50, to carry out surface clean to crystal silicon chip.Herein, the HCl solution
Mass concentration is set as 5~8%, when the crystal silicon chip flows through the rinse bath 50, is preferably submerged in HCl solution to realize two
The cleaning of side surface.Generally, the air knife being oppositely arranged up and down is arranged in the air-dried slot 70, and passes through compressed air for Liquid Residue
Body blows off crystal silicon chip surface.
In the other embodiment of the utility model, the conversion slot 40 also may be configured as rinsing bowl 60 or another cleaning
HCl solution equally can be used in another rinse bath and carry out surface clean to corresponding crystal silicon chip for slot.
In conclusion the moisture film slot 10 of the utility model cleaning equipment 100 can spray to be formed in the front surface of crystal silicon chip
One layer of protection moisture film avoids acid mist, reacts the front surface of drop erosion damage crystal silicon chip, and cause crystal silicon chip front surface office
Portion's reaction generates apparent etching mark, influences beauty；For n-PERT double-side cell, above-mentioned protection moisture film also can avoid crystalline substance
The bsg layer of body silicon wafer front surface wrecks, so that when corresponding crystal silicon chip carries out secondary phosphorus diffusion, front surface tool
There is complete bsg layer exposure mask to protect, effectively PN junction is avoided to go to pot, reduces loss in parallel.Except this, the conversion slot 40 can basis
Different crystal silicon cell procedure for producing demands are adjusted, and meet the different operation requirement of corresponding crystal silicon chip.
It should be appreciated that although this specification is described in terms of embodiments, but not each embodiment only includes one
A independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should will say
As a whole, the technical solution in each embodiment may also be suitably combined to form those skilled in the art can for bright book
With the other embodiments of understanding.
Tool of the series of detailed descriptions listed above only for the feasible embodiment of the utility model
Body explanation, they are all without departing from made by the utility model skill spirit not to limit the protection scope of the utility model
Equivalent implementations or change should be included within the scope of protection of this utility model.
Claims (8)
1. a kind of cleaning equipment for crystal silicon chip, it is characterised in that: the cleaning equipment include the moisture film slot being arranged successively,
Descaling bath, alkaline bath, conversion slot and rinse bath, the descaling bath is interior to be equipped with the acid solution comprising HF, to realize that crystal silicon chip is carried on the back
The cleaning on surface；Making herbs into wool or polishing of the alkaline bath to realize crystal silicon chip back surface；It is molten that HCl is equipped in the rinse bath
Liquid, to carry out surface clean to crystal silicon chip.
2. cleaning equipment according to claim 1, it is characterised in that: the conversion slot is set as oxidation trough, the oxidation
Slot is to realize the back surface oxidation of crystal silicon chip and form corresponding oxide layer in the back surface of the crystal silicon chip.
3. cleaning equipment according to claim 2, it is characterised in that: be equipped with HNO in the oxidation trough3Solution, the HNO3
The mass concentration of solution is set as 65~69%.
4. cleaning equipment according to claim 2, it is characterised in that: between the descaling bath and alkaline bath, alkaline bath with
Rinsing bowl is provided between oxidation trough, between oxidation trough and rinse bath.
5. cleaning equipment according to claim 1, it is characterised in that: the conversion slot is set as rinsing bowl or another cleaning
Slot, another rinse bath is interior to be equipped with HCl solution.
6. cleaning equipment according to claim 1, it is characterised in that: equal edge in the descaling bath, alkaline bath and conversion slot
The horizontally arranged idler wheel having to realize crystal silicon chip transmission.
7. cleaning equipment according to claim 1, it is characterised in that: the conversion slot and alkaline bath are provided with heating dress
It sets.
8. cleaning equipment according to claim 1, it is characterised in that: the rear end of the rinse bath is also disposed with washing
Slot and air-dried slot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822139028.XU CN209119056U (en) | 2018-12-19 | 2018-12-19 | Cleaning equipment for crystal silicon chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822139028.XU CN209119056U (en) | 2018-12-19 | 2018-12-19 | Cleaning equipment for crystal silicon chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209119056U true CN209119056U (en) | 2019-07-16 |
Family
ID=67208332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822139028.XU Active CN209119056U (en) | 2018-12-19 | 2018-12-19 | Cleaning equipment for crystal silicon chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209119056U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112185865A (en) * | 2020-11-27 | 2021-01-05 | 常州时创能源股份有限公司 | Chain type wet etching equipment for TOPCon battery |
-
2018
- 2018-12-19 CN CN201822139028.XU patent/CN209119056U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112185865A (en) * | 2020-11-27 | 2021-01-05 | 常州时创能源股份有限公司 | Chain type wet etching equipment for TOPCon battery |
| CN112185865B (en) * | 2020-11-27 | 2021-02-26 | 常州时创能源股份有限公司 | Chain type wet etching equipment for TOPCon battery |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: CSI Cells Co.,Ltd. Patentee after: Funing atlas sunshine Power Technology Co., Ltd Patentee after: Atlas sunshine Power Group Co.,Ltd. Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee before: CSI Cells Co.,Ltd. Patentee before: CSI-GCL SOLAR MANUFACTURING (YANCHENG) Co.,Ltd. Patentee before: CSI SOLAR POWER GROUP Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |