CN109378364B - Etching and edge removing process for silicon wafer in solar cell production - Google Patents
Etching and edge removing process for silicon wafer in solar cell production Download PDFInfo
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- CN109378364B CN109378364B CN201811468315.3A CN201811468315A CN109378364B CN 109378364 B CN109378364 B CN 109378364B CN 201811468315 A CN201811468315 A CN 201811468315A CN 109378364 B CN109378364 B CN 109378364B
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- silicon wafer
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 112
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 112
- 239000010703 silicon Substances 0.000 title claims abstract description 112
- 238000005530 etching Methods 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 52
- 238000005498 polishing Methods 0.000 claims abstract description 41
- 238000005406 washing Methods 0.000 claims abstract description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000009966 trimming Methods 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 claims abstract description 14
- 238000005507 spraying Methods 0.000 claims abstract description 14
- 239000008367 deionised water Substances 0.000 claims abstract description 11
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 11
- 239000007788 liquid Substances 0.000 claims abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims description 30
- 239000000243 solution Substances 0.000 claims description 27
- 229910017604 nitric acid Inorganic materials 0.000 claims description 25
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 20
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 15
- 239000011259 mixed solution Substances 0.000 claims description 15
- 239000000654 additive Substances 0.000 claims description 12
- 230000000996 additive effect Effects 0.000 claims description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 10
- 238000007688 edging Methods 0.000 claims description 8
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 5
- AZFNGPAYDKGCRB-XCPIVNJJSA-M [(1s,2s)-2-amino-1,2-diphenylethyl]-(4-methylphenyl)sulfonylazanide;chlororuthenium(1+);1-methyl-4-propan-2-ylbenzene Chemical compound [Ru+]Cl.CC(C)C1=CC=C(C)C=C1.C1=CC(C)=CC=C1S(=O)(=O)[N-][C@@H](C=1C=CC=CC=1)[C@@H](N)C1=CC=CC=C1 AZFNGPAYDKGCRB-XCPIVNJJSA-M 0.000 claims description 5
- 229960002635 potassium citrate Drugs 0.000 claims description 5
- 239000001508 potassium citrate Substances 0.000 claims description 5
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 claims description 5
- 235000011082 potassium citrates Nutrition 0.000 claims description 5
- ONQDVAFWWYYXHM-UHFFFAOYSA-M potassium lauryl sulfate Chemical compound [K+].CCCCCCCCCCCCOS([O-])(=O)=O ONQDVAFWWYYXHM-UHFFFAOYSA-M 0.000 claims description 5
- 239000004304 potassium nitrite Substances 0.000 claims description 5
- 235000010289 potassium nitrite Nutrition 0.000 claims description 5
- 229940116985 potassium lauryl sulfate Drugs 0.000 claims description 4
- 229940064218 potassium nitrite Drugs 0.000 claims description 4
- 230000035484 reaction time Effects 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 76
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an etching and trimming process of a silicon wafer in solar cell production, wherein deionized water is used for washing each surface of the silicon wafer before etching, the surface of the silicon wafer is dried or spin-dried, the front side of the silicon wafer is placed downwards to be contacted with an etching solution during etching, the etching solution is hydrofluoric acid, gas with stable properties is sprayed from the upper side of the silicon wafer to the back side of the silicon wafer, the spraying gas is nitrogen, and after the etching and trimming are finished, polishing liquid is used for polishing the back side of the silicon wafer. According to the etching and trimming process for the silicon wafer in the production of the solar cell, nitrogen is sprayed to the back of the silicon wafer, an oxide layer on the back of the silicon wafer can be protected, the polishing step is added after etching is finished, the silicon wafer can be smoother, and the conversion efficiency of a cell is improved.
Description
Technical Field
The invention belongs to the technical field of silicon wafer etching, and particularly relates to an etching and trimming process for a silicon wafer in solar cell production.
Background
At present, silicon wafers with an oxide layer on the back side for protection need to be prepared due to the process design requirements. When the silicon wafer with the oxide layer attached to the back surface is prepared, the oxide layer grows on the front surface and the back surface of the silicon wafer, the oxide layer on the front surface needs to be removed through wet etching, and meanwhile, the oxide layer on the back surface is reserved, so that the requirements of process design on the silicon wafer are met.
In the process of removing the oxide layer on the front side of the silicon wafer, gas volatilized by the etching solution reaches the edge of the back side of the silicon wafer to corrode the oxide layer on the edge, so that the oxide layer on the edge of the back side is corroded to a certain degree, the process requirements of products are not met, the back side of the silicon wafer is also a rough uneven surface, and the back reflection is good, and the absorption of a long-wave band spectrum in sunlight and the subsequent combination of an aluminum-silicon alloy and a silicon body are not favorable.
Disclosure of Invention
The invention aims to provide an etching and trimming process of a silicon wafer in the production of a solar cell, so as to make up for the defects of the prior art.
In order to solve the problems, the technical scheme adopted by the invention is as follows: an etching and trimming process for a silicon wafer in the production of a solar cell comprises the following steps:
s1, rinsing each surface of the silicon wafer by using a mixed solution of hydrofluoric acid and nitric acid;
s2, washing each surface of the silicon wafer obtained in the step S1 by using deionized water;
s3, drying the surface of the silicon wafer obtained in the step S2 in a drying or spin-drying mode;
s4, etching the side and the back of the silicon wafer obtained in the step S3 by using a mixed solution of hydrofluoric acid, nitric acid and sulfuric acid;
s5, washing each surface of the silicon wafer obtained in the step S4 by using deionized water, and drying the surface of the silicon wafer in a drying or spin-drying manner;
s6, placing the front side of the silicon wafer downwards to contact with the corrosive solution, spraying gas with stable property from the upper side of the silicon wafer to the back side of the silicon wafer, taking out the silicon wafer and washing the silicon wafer with water after a certain reaction time;
and S7, polishing the back surface of the silicon wafer by using the polishing liquid after the etching and trimming are finished.
Preferably, in step S1, the mass concentration percentage of the hydrofluoric acid and the nitric acid in the mixed solution of the hydrofluoric acid and the nitric acid is 5:1 to 10: 1.
Preferably, in step S1, the silicon wafer obtained after the diffusion cutoff is rinsed on each surface in a separate tank-type apparatus, the rinsing time is less than 10S, the tank-type apparatus has a plurality of rollers, and the silicon wafer obtained after the diffusion cutoff passes through the tank-type apparatus in a floating manner.
Preferably, in step S2, each surface of the silicon wafer is rinsed in a chain type apparatus or a tank type apparatus, and the rinsing manner is spraying or rinsing.
Preferably, in step S6, the etching solution is hydrofluoric acid, the jet gas is nitrogen, and the reaction time is 2-3 min.
Preferably, the polishing solution in step S7 comprises the following components in percentage by mass: 0.5% -10% of HF and HNO35％-55％、H2SO45-55% and acetic acid 5-30%.
Preferably, the polishing solution in step S7 further contains an additive, wherein the additive includes one or more of ammonium fluoride, potassium nitrite, potassium citrate and potassium lauryl sulfate, and the content of the additive accounts for 5-15% of the total mass of the polishing solution.
Preferably, the temperature of the polishing solution during polishing in step S7 is 5-25 ℃, and the polishing time is 4-10 min.
The invention has the technical effects and advantages that: according to the etching and trimming process for the silicon wafer in the production of the solar cell, nitrogen is sprayed to the back of the silicon wafer when etching is carried out, the edge oxide layer on the back of the silicon wafer can be prevented from being corroded by gas volatilized by a corrosive solution, the oxide layer on the back of the silicon wafer is protected, the silicon wafer can be smoother after the etching is finished, absorption of a long-wave band spectrum in sunlight is enhanced, utilization and conversion of light energy are further increased, meanwhile, the smooth back is favorable for combination of follow-up aluminum-silicon alloy and the silicon wafer, and conversion efficiency of a cell is improved.
Detailed Description
The technical scheme of the invention is further explained by combining the embodiment as follows:
example 1
An etching and trimming process for a silicon wafer in the production of a solar cell comprises the following steps:
s1, using a mixed solution of hydrofluoric acid and nitric acid to rinse each surface of the silicon wafer obtained after diffusion cutoff in an independent groove type device, wherein the mass concentration percentage of the hydrofluoric acid to the nitric acid in the mixed solution of the hydrofluoric acid and the nitric acid is 5:1, the rinsing time is less than 10S, a plurality of rollers are arranged in the groove type device, and the silicon wafer obtained after diffusion cutoff passes through the groove type device in a floating manner;
s2, washing each surface of the silicon wafer obtained in the step S1 in chain type equipment or groove type equipment by using deionized water, wherein the washing mode is spraying or rinsing;
s3, drying the surface of the silicon wafer obtained in the step S2 in a drying or spin-drying mode;
s4, etching the side and the back of the silicon wafer obtained in the step S3 by using a mixed solution of hydrofluoric acid, nitric acid and sulfuric acid;
s5, washing each surface of the silicon wafer obtained in the step S4 by using deionized water, and drying the surface of the silicon wafer in a drying or spin-drying manner;
s6, placing the front side of the silicon wafer downwards to be in contact with an etching solution, wherein the etching solution is hydrofluoric acid, spraying gas with stable properties from the upper side of the silicon wafer to the back side of the silicon wafer, the spraying gas is nitrogen, and after 2min, taking out the silicon wafer and washing the silicon wafer with water;
s7, after the etching and the edging are finished, polishing the back of the silicon wafer by adopting polishing liquid, wherein the polishing liquid is used for polishing the back of the silicon wafer according to the massThe components of the material in percentage by weight are as follows: HF 0.5%, HNO35％、H2SO45 percent of acetic acid, and an additive which comprises one or more of ammonium fluoride, potassium nitrite, potassium citrate and potassium lauryl sulfate, wherein the content of the additive accounts for 5 percent of the total mass of the polishing solution, the temperature of the polishing solution is 5 ℃ during polishing, and the polishing time is 4 min.
Example 2
An etching and trimming process for a silicon wafer in the production of a solar cell comprises the following steps:
s1, using a mixed solution of hydrofluoric acid and nitric acid to rinse each surface of the silicon wafer obtained after diffusion cutoff in an independent groove type device, wherein the mass concentration percentage of the hydrofluoric acid to the nitric acid in the mixed solution of the hydrofluoric acid and the nitric acid is 8:1, the rinsing time is less than 10S, a plurality of rollers are arranged in the groove type device, and the silicon wafer obtained after diffusion cutoff passes through the groove type device in a floating manner;
s2, washing each surface of the silicon wafer obtained in the step S1 in chain type equipment or groove type equipment by using deionized water, wherein the washing mode is spraying or rinsing;
s3, drying the surface of the silicon wafer obtained in the step S2 in a drying or spin-drying mode;
s4, etching the side and the back of the silicon wafer obtained in the step S3 by using a mixed solution of hydrofluoric acid, nitric acid and sulfuric acid;
s5, washing each surface of the silicon wafer obtained in the step S4 by using deionized water, and drying the surface of the silicon wafer in a drying or spin-drying manner;
s6, placing the front side of the silicon wafer downwards to be in contact with an etching solution, wherein the etching solution is hydrofluoric acid, spraying gas with stable properties from the upper side of the silicon wafer to the back side of the silicon wafer, the spraying gas is nitrogen, and after 2min, taking out the silicon wafer and washing the silicon wafer with water;
s7, after the etching and the trimming are finished, polishing the back of the silicon wafer by using polishing liquid, wherein the polishing liquid comprises the following components in percentage by mass: HF 5%, HNO330％、H2SO430% acetic acid15 percent, and the polishing solution also contains an additive, wherein the additive comprises one or more of ammonium fluoride, potassium nitrite, potassium citrate and potassium lauryl sulfate, the content of the additive accounts for 10 percent of the total mass of the polishing solution, the temperature of the polishing solution is 15 ℃ during polishing, and the polishing time is 7 min.
Example 3
An etching and trimming process for a silicon wafer in the production of a solar cell comprises the following steps:
s1, using a mixed solution of hydrofluoric acid and nitric acid to rinse each surface of the silicon wafer obtained after diffusion cutoff in an independent groove type device, wherein the mass concentration percentage of the hydrofluoric acid to the nitric acid in the mixed solution of the hydrofluoric acid and the nitric acid is 10:1, the rinsing time is less than 10S, a plurality of rollers are arranged in the groove type device, and the silicon wafer obtained after diffusion cutoff passes through the groove type device in a floating manner;
s2, washing each surface of the silicon wafer obtained in the step S1 in chain type equipment or groove type equipment by using deionized water, wherein the washing mode is spraying or rinsing;
s3, drying the surface of the silicon wafer obtained in the step S2 in a drying or spin-drying mode;
s4, etching the side and the back of the silicon wafer obtained in the step S3 by using a mixed solution of hydrofluoric acid, nitric acid and sulfuric acid;
s5, washing each surface of the silicon wafer obtained in the step S4 by using deionized water, and drying the surface of the silicon wafer in a drying or spin-drying manner;
s6, placing the front side of the silicon wafer downwards to be in contact with an etching solution, wherein the etching solution is hydrofluoric acid, spraying gas with stable properties from the upper side of the silicon wafer to the back side of the silicon wafer, the spraying gas is nitrogen, and after 3min, taking out the silicon wafer and washing the silicon wafer with water;
s7, after the etching and the trimming are finished, polishing the back of the silicon wafer by using polishing liquid, wherein the polishing liquid comprises the following components in percentage by mass: HF 10%, HNO355％、H2SO455 percent of acetic acid, 30 percent of acetic acid, and additives comprising ammonium fluoride, potassium nitrite, potassium citrate andone or more of lauryl sulfate potassium, the content of which accounts for 15% of the total mass of the polishing solution, the temperature of the polishing solution is 25 ℃ during polishing, and the polishing time is 10 min.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the invention.
Claims (8)
1. An etching and trimming process for a silicon wafer in solar cell production is characterized by comprising the following steps: the method comprises the following steps:
s1, rinsing each surface of the silicon wafer by using a mixed solution of hydrofluoric acid and nitric acid;
s2, washing each surface of the silicon wafer obtained in the step S1 by using deionized water;
s3, drying the surface of the silicon wafer obtained in the step S2 in a drying or spin-drying mode;
s4, etching the side and the back of the silicon wafer obtained in the step S3 by using a mixed solution of hydrofluoric acid, nitric acid and sulfuric acid;
s5, washing each surface of the silicon wafer obtained in the step S4 by using deionized water, and drying the surface of the silicon wafer in a drying or spin-drying manner;
s6, placing the front side of the silicon wafer downwards to contact with the corrosive solution, spraying gas with stable property from the upper side of the silicon wafer to the back side of the silicon wafer, taking out the silicon wafer and washing the silicon wafer with water after a certain reaction time;
and S7, polishing the back surface of the silicon wafer by using the polishing liquid after the etching and trimming are finished.
2. The etching and edging process of the silicon wafer in the production of the solar cell piece as claimed in claim 1, characterized in that: in step S1, the mass concentration percentage of hydrofluoric acid and nitric acid in the mixed solution of hydrofluoric acid and nitric acid is 5:1-10: 1.
3. The etching and edging process of the silicon wafer in the production of the solar cell piece as claimed in claim 1, characterized in that: and step S1, rinsing each surface of the silicon wafer obtained after the diffusion cutoff in an independent groove type device, wherein the rinsing time is less than 10S, the groove type device is provided with a plurality of rollers, and the silicon wafer obtained after the diffusion cutoff passes through the groove type device in a floating manner.
4. The etching and edging process of the silicon wafer in the production of the solar cell piece as claimed in claim 1, characterized in that: and in the step S2, washing each surface of the silicon wafer in a chain type device or a groove type device in a spraying or rinsing mode.
5. The etching and edging process of the silicon wafer in the production of the solar cell piece as claimed in claim 1, characterized in that: in the step S6, the etching solution is hydrofluoric acid, the jet gas is nitrogen, and the reaction time is 2-3 min.
6. The etching and edging process of the silicon wafer in the production of the solar cell piece as claimed in claim 1, characterized in that: in the step S7, the polishing solution comprises the following components by mass percent: 0.5% -10% of HF and HNO35％-55％、H2SO45-55% and acetic acid 5-30%.
7. The etching and edging process of the silicon wafer in the production of the solar cell piece as claimed in claim 1, characterized in that: the polishing solution in step S7 further contains an additive, wherein the additive includes one or more of ammonium fluoride, potassium nitrite, potassium citrate and potassium lauryl sulfate, and the content of the additive accounts for 5-15% of the total mass of the polishing solution.
8. The etching and edging process of the silicon wafer in the production of the solar cell piece as claimed in claim 1, characterized in that: in the step S7, the temperature of the polishing solution is 5-25 ℃ and the polishing time is 4-10 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811468315.3A CN109378364B (en) | 2018-12-03 | 2018-12-03 | Etching and edge removing process for silicon wafer in solar cell production |
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| CN201811468315.3A CN109378364B (en) | 2018-12-03 | 2018-12-03 | Etching and edge removing process for silicon wafer in solar cell production |
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| CN109378364A CN109378364A (en) | 2019-02-22 |
| CN109378364B true CN109378364B (en) | 2021-06-04 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6482749B1 (en) * | 2000-08-10 | 2002-11-19 | Seh America, Inc. | Method for etching a wafer edge using a potassium-based chemical oxidizer in the presence of hydrofluoric acid |
| CN102569502A (en) * | 2011-12-16 | 2012-07-11 | 合肥晶澳太阳能科技有限公司 | Wet method etching process |
| CN104278275A (en) * | 2013-07-08 | 2015-01-14 | 中国振华集团永光电子有限公司 | Silicon chip wet-etching method |
| CN106783575A (en) * | 2015-11-20 | 2017-05-31 | 茂迪(苏州)新能源有限公司 | The wet etching method of silicon chip and the production method of solar cell |
| CN108172661A (en) * | 2017-12-26 | 2018-06-15 | 温州市赛拉弗能源有限公司 | A kind of solar battery sheet production technology |
-
2018
- 2018-12-03 CN CN201811468315.3A patent/CN109378364B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6482749B1 (en) * | 2000-08-10 | 2002-11-19 | Seh America, Inc. | Method for etching a wafer edge using a potassium-based chemical oxidizer in the presence of hydrofluoric acid |
| CN102569502A (en) * | 2011-12-16 | 2012-07-11 | 合肥晶澳太阳能科技有限公司 | Wet method etching process |
| CN104278275A (en) * | 2013-07-08 | 2015-01-14 | 中国振华集团永光电子有限公司 | Silicon chip wet-etching method |
| CN106783575A (en) * | 2015-11-20 | 2017-05-31 | 茂迪(苏州)新能源有限公司 | The wet etching method of silicon chip and the production method of solar cell |
| CN108172661A (en) * | 2017-12-26 | 2018-06-15 | 温州市赛拉弗能源有限公司 | A kind of solar battery sheet production technology |
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