CN103346079A - Reusable semiconductor substrate and purification reutilization method thereof - Google Patents
Reusable semiconductor substrate and purification reutilization method thereof Download PDFInfo
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- CN103346079A CN103346079A CN2013102247165A CN201310224716A CN103346079A CN 103346079 A CN103346079 A CN 103346079A CN 2013102247165 A CN2013102247165 A CN 2013102247165A CN 201310224716 A CN201310224716 A CN 201310224716A CN 103346079 A CN103346079 A CN 103346079A
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Abstract
The invention discloses a reusable semiconductor substrate. A buffering layer and a protective layer are additionally provided based on an original substrate body to integrally serve as a novel semiconductor substrate, the substrate body can be effectively protected, defects of the substrate body are reduced, the surface removing amount of the substrate body is reduced, and reutilization frequency is improved. The invention further provides a purification reutilization method for the semiconductor substrate, and the purification reutilization method is convenient to operate and feasible, and largely reduces the production cost of the epitaxial thin film peeling technology.
Description
Technical field
The present invention relates to a kind of semiconductor-based end and make the reusable method of this purifying of semiconductor-based end, belong to technical field of semiconductors
Background technology
The electronic device that is formed by III-V family is to efficiently, and multi-functional and practical direction develops, concrete high performance solar batteries, high-brightness LED and other the photoelectric device of being embodied in.The epitaxial film lift-off technology is being applied to these production fields, therefore not only produces the high-performance optical electric device, and helps the reduction of production cost.The cost reduction that is brought by the extension stripping means mainly is that expensive substrate is reused.The price of 6 inches GaAs is 160-320 dollar/sheets.Therefore, how effectively substrate being reused is an important step that reduces production costs.Substrate surface roughness after peeling off can increase, and also has certain defective, and this brings a lot of defectives can for the growth quality of epitaxial loayer, and the substrate after peeling off simultaneously contacts with other metals, has also caused metallic pollution.Be to remove the substrate surface certain thickness for the base treatment after peeling off at present, the smoothness of substrate surface is improved, yet, in the repeated use process, find, because the substrate surface roughness height after peeling off, the thickness that needs to remove is with regard to height, therefore, substrate repeats to have reduced the repeated use number of times of substrate like this with just becoming extremely thin several times.The blemish that other is big can't be removed through generally weakening after the above-mentioned technology.
Summary of the invention
Technical problem to be solved by this invention is: a kind of reusable semiconductor-based end, be provided, and the repeated use number of times height at this semiconductor-based end, the defective on the suprabasil surface of semiconductor is few during repeated use, can lower the defective that exists in the outer layer growth process.
Another technical problem to be solved by this invention is: provide a kind of reusable purifying of the semiconductor-based end reusable method, this method can be carried out purifying to the semiconductor substrate, the defective at the semiconductor-based end is reduced, the surface removal amount of substrate body is thin, has improved the repeated use number of times of substrate.
For solving the problems of the technologies described above, technical scheme of the present invention is: a kind of reusable semiconductor-based end, comprise substrate body, layer protective layer and two buffer layer at least at least, and protective layer is between each resilient coating; In each layer resilient coating, have one deck and be arranged at bottom buffering layer between protective layer and the substrate body; Have one deck and be in the top resilient coating of whole upper surface of substrate of semiconductor, bottom buffering layer is identical with the material of substrate body.
As a kind of preferred scheme; this semiconductor-based end, comprise layer protective layer and two buffer layer; wherein protective layer is between the two buffer layer; in the two buffer layer; one deck resilient coating is between the surface and protective layer of substrate body, and another layer resilient coating is in whole upper surface of substrate of semiconductor.
As a kind of preferred scheme, described protective layer is the phosphide layer.
The reusable method of a kind of reusable purifying of the semiconductor-based end comprises
A. the semiconductor-based end after providing one to peel off;
B. successively remove resilient coating and protective layer from outside to inside successively from the surface at the semiconductor-based end, until keeping the bottom buffering layer be bonded in the substrate body surface at last;
C. utilize the mode of chemical mechanical planarization to remove bottom buffering layer;
D. clean surface particles thing and the pollutant of substrate body;
E. the dry back of handling of substrate body is reused.
As a kind of preferred scheme, the removal method of resilient coating is among the step B: the semiconductor-based end is inverted, resilient coating to be removed is immersed in the resilient coating chemical etching liquor removes resilient coating.
As a kind of preferred scheme, described resilient coating etching liquid is the sulfuric acid of 0.1-1% and the hydrogen peroxide of 1-5%, and solvent is deionized water.
As a kind of preferred scheme, the removal method of protective layer is among the step B: integral body of the semiconductor-based end is immersed in selective removal protective layer in the protective layer etching liquid, and what this protective layer etching liquid was removed semiconductor-based basal surface simultaneously contains phosphor contaminant and metallic pollution.
As a kind of preferred scheme, the removal method of protective layer is among the step B: when protective layer has multilayer, at least when removing layer protective layer integral body of the semiconductor-based end is immersed in the protective layer etching liquid and removes protective layer, what this moment, the protective layer etching liquid was removed semiconductor-based basal surface simultaneously contains phosphor contaminant and metallic pollution; The method that other remaining protective layers then adopt single face to remove is about to the inversion of the semiconductor-based end, protective layer to be gone is immersed in the protective layer chemical etching liquor removes protective layer.
As a kind of preferred scheme, described protective layer etching liquid is hydrochloric acid solution, and its concentration is 10%-25%.
As a kind of preferred scheme, the lapping liquid pH value 8.5-10.5 that chemical mechanical planarization adopts among the described step C contains the granularity of 0.2-2% at the 20-80nm silica dioxide granule, and adds the polishing additive of 0.2%-2%.
After having adopted technique scheme, effect of the present invention is: this reusable semiconductor-based end, have resilient coating and protective layer, and resilient coating is identical with the substrate body material, and resilient coating can not pollute substrate body; The existence of protective layer makes when substrate handled, and some defective protected seams are isolated, thereby has protected the surface quality of substrate body, after then only needing resilient coating, protective layer removed, and the surface quality height of substrate body, the epitaxial loayer defective of growth is few.Certainly, the existence of resilient coating need not blocked up removal substrate body surface when removing resilient coating, can improve the access times at the semiconductor-based end like this.
And this invention also provides the above-mentioned semiconductor-based end of a kind of purifying to make its reusable method, this method has kept bottom buffering layer, and utilize the chemical mechanical planarization method to remove bottom buffering layer, make the surface flatness height of substrate body, defective is few, the removal amount of substrate body is low, and the access times at the semiconductor-based end improve.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is the unstripped structure cutaway view before of the embodiment of the invention;
Fig. 2 is the structure cutaway view after the embodiment of the invention is peeled off;
Fig. 3 is the structure cutaway view after the embodiment of the invention is removed top resilient coating;
Fig. 4 is the structure cutaway view behind the removal protective layer in the embodiment of the invention;
Fig. 5 is the structural representation that single face is removed method in the embodiment of the invention;
Fig. 6 is the structural representation of the two-sided removal method of the embodiment of the invention;
In the accompanying drawing: 1. substrate body 1; 2. bottom buffering layer 2; 3. protective layer 3; 4. top resilient coating 4; 5. sacrifice layer 5; 6. epitaxial loayer; 7. the resilient coating etching liquid 7; 8. protective layer etching liquid.
Embodiment
The present invention is described in further detail below by specific embodiment.
As shown in Figure 1, 2, a kind of reusable semiconductor-based end, comprise substrate body 1, layer protective layer 3 and two buffer layer at least at least, protective layer 3 and each resilient coating is stacked forms, protective layer 3 is between each resilient coating; In each layer resilient coating, have one deck and be arranged at bottom buffering layer 2 between protective layer 3 and the substrate body 1; Have one deck and be in the top resilient coating 4 of whole upper surface of substrate of semiconductor.In the present embodiment, resilient coating is two-layer, be respectively the most surperficial top resilient coating 4 of bottom buffering layer 2 and the semiconductor-based end that is connected with substrate body 1, and protective layer 3 is one deck, between bottom buffering layer 2 and top resilient coating 4.Function by the semiconductor-based end can find for the number of resilient coating and the number of protective layer 3 mandatory provision is not arranged, but will guarantee following several: one. the bottom buffering layer 2 of one deck must be arranged; Two. must guarantee to have the top of one deck resilient coating 4; Three. must guarantee to have layer protective layer 3.Like this, the structure at this semiconductor-based end is namely varied, and any stacked order between each resilient coating and the protective layer 3 all can.As the simplest structure that shows among Fig. 2; For example have three layers of resilient coating and two-layer protective layer 3 again, interlaced stacked between protective layer 3 and the resilient coating, equally all can realize the reusable function in the semiconductor-based end.During use, the formation sacrifice layer 5 on the top resilient coating 4 at the semiconductor-based end forms epitaxial loayers 6 at sacrifice layer 5.
Wherein, described protective layer 3 is the phosphide layer, as, InGaP (InGaP) gallium phosphide aluminium (AlGaP), AlGaInP (AlGaInP), indium phosphide.And top resilient coating 4 is GaAs or aluminum gallium arsenide.Bottom buffering layer 2 is GaAs.
In addition, the invention also discloses the reusable method of a kind of reusable purifying of the semiconductor-based end, with the semiconductor-based end in the present embodiment be example, this semiconductor-based end, include only two buffer layer and layer protective layer 3, this method comprises
A. as shown in Figure 2, the semiconductor-based end after providing one to peel off;
B. shown in Fig. 3,4, successively remove resilient coating and protective layer 3 from outside to inside successively from the surface at the semiconductor-based end, until keeping the bottom buffering layer 2 be bonded in substrate body 1 surface at last; And for present embodiment, namely remove top resilient coating 4 earlier, and protective layer 3 is exposed, and then remove protective layer 3, bottom buffering layer 2 is exposed.The removal method of resilient coating adopts single face removal method to remove in this step.Be specially: the semiconductor-based end is inverted, resilient coating to be removed is immersed in the resilient coating chemical etching liquor removes resilient coating.Specifically as shown in Figure 5, only need remove top resilient coating 4 in the present embodiment, the liquid level of resilient coating etching liquid 7 should only not have top resilient coating 4 so.If have the resilient coating that multilayer need be removed, for example, resilient coating A, resilient coating B and top resilient coating 4; when removing resilient coating A so; the liquid level of resilient coating etching liquid 7 did not only have resilient coating A, so just need not other position protections to substrate, provided cost savings and had reduced pollution.Described resilient coating etching liquid 7 is the sulfuric acid of 0.1-1% and the hydrogen peroxide of 1-5%, and solvent is deionized water.The removal method of protective layer 3 can have dual mode in this step; a kind of is the two-sided removal method of all using; as shown in Figure 6; be about to integral body of the semiconductor-based end and be immersed in selective removal protective layer 3 in the protective layer etching liquid 8, what this protective layer etching liquid 8 was removed semiconductor-based basal surface simultaneously contains phosphor contaminant and metallic pollution.Another kind is the mode that two-sided removal method combines with single face removal method, namely when protective layer 3 has multilayer, at least when removing layer protective layer 3, use two-sided removal method, be about to integral body of the semiconductor-based end and be immersed in the protective layer etching liquid 8 and remove protective layer 3, what this moment, protective layer etching liquid 8 was removed semiconductor-based basal surface simultaneously contains phosphor contaminant and metallic pollution; The method that other remaining protective layers 3 then adopt single face to remove is about to the inversion of the semiconductor-based end, protective layer to be gone 3 is immersed in removes protective layer 3 in protective layer 3 chemical etching liquors.Like this, two-sided removal method can be simultaneously to the phosphor contaminant that contains of semiconductor backside of substrate, also can remove substrate since previous technical process bring metallic pollution, shortened process.Described protective layer etching liquid 8 is hydrochloric acid solution, and its concentration is 10%-25%.Etch protection layer 3 speed are 20nm-80nm/min, and solution temperature is at 20-40 ℃.Behind step B, obtain having the structure of bottom buffering layer 2 and substrate body 1;
C. utilize the mode of chemical mechanical planarization to remove bottom buffering layer 2; This chemical mechanical planarization can make substrate body 1 surface smoothness improve, and removes substrate body 1 material that exposes renewal behind about 120% bottom buffering layer 2 thickness, reaches best substrate body 1 surface after the cleaning, and is very little for the removal amount of substrate body 1.The lapping liquid pH value 8.5-10.5 that chemical mechanical planarization among the described step C (CMP) adopts, contain the granularity of 0.2-2% at the 20-80nm silica dioxide granule, and the polishing additive of adding 0.2%-2%, this polishing agent clorox, 1, the 4-cyclohexanediamine, ATMP, suitable increase polishing effect.
D. clean surface particles thing and the pollutant of substrate body 1; Cleaning fluid solution is acid, and pH=0.35-2.0 contains inorganic acid, and sulfuric acid, or hydrochloric acid wherein can contain the PEG polyethylene glycol, content 10ppm-100ppm.
E. with substrate body 1 dry the processing, drying mode is to reuse behind the Rotary drying.
The present invention utilizes on the basis of original substrate body 1 and adds resilient coating and protective layer 3 integral body as new use of the semiconductor-based end; can effectively protect substrate body 1; reduce the defective on the substrate body 1, the surface removal amount of dwindling substrate body 1 improves and reuses number of times.The present invention simultaneously provides a kind of again and easy to operately feasible the reusable method of purifying is carried out in the semiconductor substrate, and the production cost of epitaxial film lift-off technology is reduced greatly.
Claims (10)
1. a reusable semiconductor-based end, it is characterized in that: comprise substrate body, layer protective layer and two buffer layer at least at least, protective layer is between each resilient coating; In each layer resilient coating, have one deck and be arranged at bottom buffering layer between protective layer and the substrate body; Have one deck and be in the top resilient coating of whole upper surface of substrate of semiconductor, bottom buffering layer is identical with the material of substrate body.
2. a kind of reusable semiconductor-based end as claimed in claim 1; it is characterized in that: this semiconductor-based end, comprise layer protective layer and two buffer layer; wherein protective layer is between the two buffer layer; in the two buffer layer; one deck resilient coating is to be in bottom buffering layer between the surface of substrate body and the protective layer, and another layer resilient coating is in the top resilient coating of whole upper surface of substrate of semiconductor.
3. a kind of reusable semiconductor-based end as claimed in claim 2,, it is characterized in that: described protective layer is the phosphide layer.
4. the reusable method of purifying that makes the semiconductor-based end in the claim 1 comprises
A. the semiconductor-based end after providing one to peel off;
B. successively remove resilient coating and protective layer from outside to inside successively from the surface at the semiconductor-based end, until keeping the bottom buffering layer be bonded in the substrate body surface at last;
C. utilize the mode of chemical mechanical planarization to remove bottom buffering layer;
D. clean surface particles thing and the pollutant of substrate body;
E. the dry back of handling of substrate body is reused.
5. a kind of method as claimed in claim 4, it is characterized in that: the removal method of resilient coating is among the step B: the semiconductor-based end is inverted, resilient coating to be removed is immersed in the resilient coating chemical etching liquor removes resilient coating.
6. a kind of method as claimed in claim 5, it is characterized in that: described resilient coating etching liquid is the sulfuric acid of 0.1-1% and the hydrogen peroxide of 1-5%, and solvent is deionized water.
7. a kind of method as claimed in claim 5; it is characterized in that: the removal method of protective layer is among the step B: integral body of the semiconductor-based end is immersed in selective removal protective layer in the protective layer etching liquid, and what this protective layer etching liquid was removed semiconductor-based basal surface simultaneously contains phosphor contaminant and metallic pollution.
8. a kind of method as claimed in claim 5, it is characterized in that: the removal method of protective layer is among the step B: when protective layer has multilayer, at least when removing layer protective layer integral body of the semiconductor-based end is immersed in the protective layer etching liquid and removes protective layer, what this moment, the protective layer etching liquid was removed semiconductor-based basal surface simultaneously contains phosphor contaminant and metallic pollution; The method that other remaining protective layers then adopt single face to remove is about to the inversion of the semiconductor-based end, protective layer to be gone is immersed in the protective layer chemical etching liquor removes protective layer.
9. as claim 7 or 8 described a kind of methods, it is characterized in that: described protective layer etching liquid is hydrochloric acid solution, and its concentration is 10%-25%.
10. a kind of method as claimed in claim 4, it is characterized in that: the lapping liquid pH value 8.5-10.5 that chemical mechanical planarization adopts among the described step C, contain the granularity of 0.2-2% at the 20-80nm silica dioxide granule, and add the polishing additive of 0.2%-2%.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428427A (en) * | 2015-12-11 | 2016-03-23 | 中国电子科技集团公司第十八研究所 | Substrate protection structure for thin film gallium arsenide solar cell substrate reuse and processing technology for substrate protection structure |
| US9444019B1 (en) | 2015-09-21 | 2016-09-13 | Epistar Corporation | Method for reusing a substrate for making light-emitting device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100047959A1 (en) * | 2006-08-07 | 2010-02-25 | Emcore Solar Power, Inc. | Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells |
| US20110186910A1 (en) * | 2009-09-10 | 2011-08-04 | The Regents Of The University Of Michigan | Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth |
| US20130071999A1 (en) * | 2011-09-19 | 2013-03-21 | International Business Machines Corporation | High throughput epitaxial lift off for flexible electronics |
| CN104335365A (en) * | 2012-02-07 | 2015-02-04 | 密歇根大学董事会 | Thermal surface treatment for reuse of wafers after epitaxial lift off |
-
2013
- 2013-06-07 CN CN2013102247165A patent/CN103346079A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100047959A1 (en) * | 2006-08-07 | 2010-02-25 | Emcore Solar Power, Inc. | Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells |
| US20110186910A1 (en) * | 2009-09-10 | 2011-08-04 | The Regents Of The University Of Michigan | Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth |
| US20130071999A1 (en) * | 2011-09-19 | 2013-03-21 | International Business Machines Corporation | High throughput epitaxial lift off for flexible electronics |
| CN104335365A (en) * | 2012-02-07 | 2015-02-04 | 密歇根大学董事会 | Thermal surface treatment for reuse of wafers after epitaxial lift off |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9444019B1 (en) | 2015-09-21 | 2016-09-13 | Epistar Corporation | Method for reusing a substrate for making light-emitting device |
| CN105428427A (en) * | 2015-12-11 | 2016-03-23 | 中国电子科技集团公司第十八研究所 | Substrate protection structure for thin film gallium arsenide solar cell substrate reuse and processing technology for substrate protection structure |
| CN105428427B (en) * | 2015-12-11 | 2017-06-27 | 中国电子科技集团公司第十八研究所 | The substrate protective structure and processing technology of thin film gallium arsenide solar cell substrate multiplexing |
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Application publication date: 20131009 |