CN105428427B - The substrate protective structure and processing technology of thin film gallium arsenide solar cell substrate multiplexing - Google Patents
The substrate protective structure and processing technology of thin film gallium arsenide solar cell substrate multiplexing Download PDFInfo
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- CN105428427B CN105428427B CN201510926981.7A CN201510926981A CN105428427B CN 105428427 B CN105428427 B CN 105428427B CN 201510926981 A CN201510926981 A CN 201510926981A CN 105428427 B CN105428427 B CN 105428427B
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- 239000000758 substrate Substances 0.000 title claims abstract description 86
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 81
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 238000005516 engineering process Methods 0.000 title claims abstract description 17
- 230000001681 protective effect Effects 0.000 title claims abstract description 16
- 239000010410 layer Substances 0.000 claims abstract description 120
- 239000011241 protective layer Substances 0.000 claims abstract description 85
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 70
- 230000002378 acidificating effect Effects 0.000 claims abstract description 70
- 239000007788 liquid Substances 0.000 claims description 96
- 230000003628 erosive effect Effects 0.000 claims description 95
- 230000007797 corrosion Effects 0.000 claims description 88
- 238000005260 corrosion Methods 0.000 claims description 88
- 238000005530 etching Methods 0.000 claims description 61
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 60
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 60
- 239000002253 acid Substances 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 40
- 239000003518 caustics Substances 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 34
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 33
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 30
- 239000000126 substance Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000003513 alkali Substances 0.000 description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses the substrate protective structure and processing technology of a kind of multiplexing of thin film gallium arsenide solar cell substrate, above-mentioned substrate protective structure includes：GaAs batteries, sacrifice layer, GaInP alkalescence protective layer, GaInAs protected acidics layer, GaInP alkalescence protective layer, GaInAs protected acidics layer, GaInP alkalescence protective layer, GaInAs protected acidics layer, GaInP alkalescence protective layer, GaInAs protected acidics layer, GaInP alkalescence protective layer, GaInAs protected acidics layer, GaAs cushions, GaAs substrates.The GaAs substrates are the GaAs substrates of N-shaped doping, and the thickness range of GaAs substrates is 200~700 microns, and doping concentration is 1 × 1017—1×1018cm‑3；The thickness range of the GaAs cushions is 200~1000nm；The thickness range of the sacrifice layer is 20~100nm.
Description
Technical field
The invention belongs to technical field of solar batteries, more particularly to a kind of thin film gallium arsenide solar cell substrate multiplexing
Substrate protective structure and processing technology.
Background technology
The product type of thin-film solar cells mainly has CdTe film battery, silica-base film electricity on photovoltaic market at present
Pond and copper and indium gallium tin (CIGS) hull cell.Various material film solar cells are with its distinctive advantage.GaAs sun electricity
Pond has high-photoelectric transformation efficiency, gravimetric specific power high, the good advantage of resistance to elevated temperatures.GaAs is direct transition section bar material,
95% sunshine is absorbed, gallium arsenide solar cell only needs 5~10 μm of thickness, can be made ultra-thin solar cell.
Although thin film gallium arsenide solar cell has highest opto-electronic conversion compared to the thin film solar cell of other materials
Efficiency, but nowadays most manufacture craft is to erode gallium arsenide substrate to realize the stripping of epitaxial layer, and this is resulted in
The waste of gallium arsenide substrate, process costs are very high.Substrate multiplexing technology is the extension between epitaxial layer and gallium arsenide substrate
One layer of sacrifice layer of AlAs of production, sacrifice layer is eroded by using the HF corrosive liquids of high selectivity, realizes the stripping of epitaxial layer,
And gallium arsenide substrate can then be reused.By the multiple multiplexing of substrate, thin film gallium arsenide solar cell is effectively reduced
Cost.But, during substrate is multiplexed, due to during sacrifice layer is corroded, although have chosen high selectivity
HF corrosive liquids, but still to gallium arsenide substrate have corrosiveness, cause substrate surface for roughness too high, epitaxial growth arsenic out
Change gallium solar cell lattice defect more, photoelectric transformation efficiency reduction.
Process equipment and processing technology of the present invention based on substrate multiplexing thin film gallium arsenide solar cell, in AlAs sacrifice layers
The protected acidic layer and alkaline protective layer of epitaxial growth multicycle and gallium arsenide substrate between, when being used to protect epitaxial layer to peel off pair
The destruction of gallium arsenide substrate.This improves the film arsenic of multiplexing substrate production to reducing the gallium arsenide substrate surface roughness peeled off
Change gallium efficiency of solar cell to be highly profitable, greatly improve thin film gallium arsenide solar cell preceding with the application on ground in space
Scape.
The content of the invention
The technical problem to be solved in the present invention is：A kind of substrate protective of thin film gallium arsenide solar cell substrate multiplexing is provided
Structure and processing technology.The patent is based in conventional substrate multiplexing thin film gallium arsenide solar cell manufacturing process, gallium arsenide substrate
It is damaged when epitaxial layer is peeled off, the excessively high technical bottleneck problem of surface roughness, it is an object of the invention to overcome prior art
Deficiency, based on substrate multiplexing thin film gallium arsenide solar cell process equipment and processing technology, in the sacrifice layer and arsenic of AlAs
The protected acidic layer and alkaline protective layer of epitaxial growth multicycle between change gallium substrate, to arsenic when being used to protect epitaxial layer to peel off
The destruction of gallium substrate, reduces the gallium arsenide substrate surface roughness peeled off, and improves the thin film gallium arsenide sun of multiplexing substrate production
Battery efficiency.The technical problems to be solved by the invention are to realize a kind of film arsenic using technologies such as epitaxial growth, chemical attacks
Change the substrate protective structure and processing technology of gallium solar cell substrate multiplexing.
The present invention is adopted the technical scheme that to solve technical problem present in known technology：
A kind of substrate protective structure of thin film gallium arsenide solar cell substrate multiplexing, including：GaAs substrates (14), are grown on
GaAs cushions (13) on GaAs substrates (14), are grown on the 5th GaInAs protected acidics layer on GaAs cushions (13)
(12) the 5th GaInP alkalescence protective layer (11) on the 5th GaInAs protected acidics layer (12), is grown on, the 5th is grown on
The 4th GaInAs protected acidics layer (10) on GaInP alkalescence protective layer (11), are grown on the 4th GaInAs protected acidics layer
(10) the 4th GaInP alkalescence protective layer (9) on, the 3rd GaInAs being grown on the 4th GaInP alkalescence protective layer (9) is acid
Protective layer (8), is grown on the 3rd GaInP alkalescence protective layer (7) on the 3rd GaInAs protected acidics layer (8), is grown on the 3rd
The 2nd GaInAs protected acidics layer (6) on GaInP alkalescence protective layer (7), are grown on the 2nd GaInAs protected acidics layer (6)
The 2nd GaInP alkalescence protective layer (5), be grown on the GaInAs protected acidics layer on the 2nd GaInP alkalescence protective layer (5)
(4) GaInP alkalescence protective layer (3) on GaInAs protected acidics layer (4), is grown on, a GaInP alkali is grown on
Sacrifice layer (2) in property protective layer (3), is grown on the GaAs batteries (1) on sacrifice layer (2)；The sacrifice layer (2) is AlAs layers
Or AlxGa1-xOne kind in As；Wherein：
The GaAs substrates that the GaAs substrates (14) are adulterated for N-shaped, the thickness range of GaAs substrates (14) is 200~700
Micron, doping concentration is 1 × 1017—1×1018cm-3；The thickness range of the GaAs cushions (13) is 200~1000nm；
5th GaInAs protected acidics layer (12), the 5th GaInP alkalescence protective layer (11), the acid guarantors of the 4th GaInAs
Sheath (10), the 4th GaInP alkalescence protective layer (9), the 3rd GaInAs protected acidics layer (8), the 3rd GaInP alkalescence protective layers
(7), the 2nd GaInAs protected acidics layer (6), the 2nd GaInP alkalescence protective layer (5), GaInAs protected acidics layer (4), the
The thickness range of one GaInP alkalescence protective layer (3) is all 50~200nm；
The thickness range of the sacrifice layer (2) is 20~100nm.
Further：0.6≤x.
A kind of thin film gallium arsenide solar cell substrate is multiplexed the processing technology of substrate protective structure, comprises the following steps：
Step 101, using metal organic chemical vapor deposition technology, growth temperature range is 500 DEG C -800 DEG C, is given birth to successively
Grow the substrate protective structure described in claim 1；
Step 102, using HF corrode corrosion sacrifice layer (2), peel away GaAs substrates and GaAs batteries；The HF corrosion
The proportioning of liquid is HF and H2The volume ratio of O is 1:1；
Step 103, the method removal substrate protective layer using chemical attack；Concretely comprise the following steps：
First GaInP alkalescence protective layer etching process be：
Configuration erosion caustic corrosion liquid, the erosion caustic corrosion liquid includes hydrochloric acid and water, and hydrochloric acid is 1 with the volume ratio of water:1, erosion alkali is rotten
Erosion liquid temperature degree is normal temperature, and etching time is 30s~90s；
Ground floor GaInAs protected acidics layer etching process be：
Configuration erosion acid corrosion liquid, the erosion acid corrosion liquid includes ammoniacal liquor and hydrogen peroxide, and ammoniacal liquor is 1 with the volume ratio of hydrogen peroxide:
9, erosion acid corrosion liquid temperature range is 35 DEG C~45 DEG C, and etching time is 3min~5min；
2nd GaInP alkalescence protective layer etching process be：
Configuration erosion caustic corrosion liquid, the erosion caustic corrosion liquid includes hydrochloric acid and water, and hydrochloric acid is 1 with the volume ratio of water:1, erosion alkali is rotten
Erosion liquid temperature degree is normal temperature, and etching time is 30s~90s；
The second layer GaInAs protected acidics layer etching process be：
Configuration erosion acid corrosion liquid, the erosion acid corrosion liquid includes ammoniacal liquor and hydrogen peroxide, and ammoniacal liquor is 1 with the volume ratio of hydrogen peroxide:
9, erosion acid corrosion liquid temperature range is 35 DEG C~45 DEG C, and etching time is 3min~5min；
3rd GaInP alkalescence protective layer etching process be：
Configuration erosion caustic corrosion liquid, the erosion caustic corrosion liquid includes hydrochloric acid and water, and hydrochloric acid is 1 with the volume ratio of water:1, erosion alkali is rotten
Erosion liquid temperature degree is normal temperature, and etching time is 30s~90s；
Third layer GaInAs protected acidics layer etching process be：
Configuration erosion acid corrosion liquid, the erosion acid corrosion liquid includes ammoniacal liquor and hydrogen peroxide, and ammoniacal liquor is 1 with the volume ratio of hydrogen peroxide:
9, erosion acid corrosion liquid temperature range is 35 DEG C~45 DEG C, and etching time is 3min~5min；
4th GaInP alkalescence protective layer etching process be：
Configuration erosion caustic corrosion liquid, the erosion caustic corrosion liquid includes hydrochloric acid and water, and hydrochloric acid is 1 with the volume ratio of water:1, erosion alkali is rotten
Erosion liquid temperature degree is normal temperature, and etching time is 30s~90s；
4th layer of GaInAs protected acidic layer etching process be：
Configuration erosion acid corrosion liquid, the erosion acid corrosion liquid includes ammoniacal liquor and hydrogen peroxide, and ammoniacal liquor is 1 with the volume ratio of hydrogen peroxide:
9, erosion acid corrosion liquid temperature range is 35 DEG C~45 DEG C, and etching time is 3min~5min；
5th GaInP alkalescence protective layer etching process be：
Configuration erosion caustic corrosion liquid, the erosion caustic corrosion liquid includes hydrochloric acid and water, and hydrochloric acid is 1 with the volume ratio of water:1, erosion alkali is rotten
Erosion liquid temperature degree is normal temperature, and etching time is 30s~90s；
Layer 5 GaInAs protected acidics layer etching process be：
Configuration erosion acid corrosion liquid, the erosion acid corrosion liquid includes ammoniacal liquor and hydrogen peroxide, and ammoniacal liquor is 1 with the volume ratio of hydrogen peroxide:
9, erosion acid corrosion liquid temperature range is 35 DEG C~45 DEG C, and etching time is 3min~5min；
Step 104, cleaned with deionized water.
The present invention has the advantages and positive effects that：
1st, the present invention is to be multiplexed film GaAs solar battery structures based on substrate, be increased between sacrifice layer and substrate
Protective layer.Protective layer can effectively stop that HF reacts with gallium arsenide substrate in epitaxial layer stripping process.Not only protect arsenic
Change gallium substrate to be corroded, and prevent hydrofluoric acid and the product of GaAs reaction to be deposited in substrate surface.Ensure that under peeling off
The gallium arsenide substrate quality come.
2nd, the protective layer that the present invention is used is the protected acidic layer and alkaline protective layer of multicycle, and the one side multicycle replaces
The protected acidic layer and alkaline protective layer of epitaxial growth can more effectively play a part of to stop protection, on the other hand in substrate
Need to remove protective layer before multiplexing, with acid etching solution and the multiple alternating corrosion of alkaline corrosion liquid, can more effectively remove lining
Basal surface impurity, reduces surface roughness, improves the quality of multiplexing substrate.
3rd, the low high quality substrate of surface roughness can just be obtained using the method corrosion protection layer of chemical attack, is instead of
The method of chemically mechanical polishing, can effectively reduce cost of manufacture and technology difficulty.
4th, the present invention is highly profitable to the cost for reducing thin film gallium arsenide solar cell, greatly improves thin film gallium arsenide
Solar cell is in space and the application prospect on ground.
Brief description of the drawings：
Fig. 1 increased the thin film gallium arsenide solar battery structure schematic diagram of substrate protective layer；
Schematic diagram is peeled off in the corrosion of Fig. 2 gallium arsenide substrates；
Fig. 3 substrate protective layers corrode schematic diagram.
Wherein：1st, GaAs batteries；2nd, sacrifice layer；3rd, GaInP alkalescence protective layer；4th, GaInAs protected acidics layer；5、GaInP
Alkaline protective layer；6th, GaInAs protected acidics layer；7th, GaInP alkalescence protective layer；8th, GaInAs protected acidics layer；9th, GaInP alkali
Property protective layer；10th, GaInAs protected acidics layer；11st, GaInP alkalescence protective layer；12nd, GaInAs protected acidics layer；13rd, GaAs delays
Rush layer；14th, GaAs substrates.
Specific embodiment
For this practical content of the invention, feature and effect can be further appreciated that, following examples are hereby enumerated, and coordinate accompanying drawing
Describe in detail as follows：
Fig. 1, a kind of substrate protective structure of thin film gallium arsenide solar cell substrate multiplexing are referred to, including：GaAs substrates
14, the GaAs cushions 13 on GaAs substrates 14 are grown on, it is grown on the 5th GaInAs protected acidics on GaAs cushions 13
Layer 12, is grown on the 5th GaInP alkalescence protective layers 11 on the 5th GaInAs protected acidics layer 12, is grown on the 5th GaInP alkali
Property protective layer 11 on the 4th GaInAs protected acidics layer 10, be grown on the 4th GaInAs protected acidics layer 10 on the 4th
GaInP alkalescence protective layers 9, are grown on the 3rd GaInAs protected acidics layer 8 on the 4th GaInP alkalescence protective layers 9, are grown on the
The 3rd GaInP alkalescence protective layers 7 on three GaInAs protected acidics layer 8, are grown on the 3rd GaInP alkalescence protective layers 7 the
Two GaInAs protected acidics layer 6, is grown on the 2nd GaInP alkalescence protective layers 5 on the 2nd GaInAs protected acidics layer 6, growth
GaInAs protected acidics layer 4 on the 2nd GaInP alkalescence protective layers 5, is grown on GaInAs protected acidics layer 4
A GaInP alkalescence protective layer 3, be grown on a GaInP alkalescence protective layer 3 on sacrifice layer 2, be grown on sacrifice layer 2
GaAs batteries 1；The sacrifice layer 2 is AlAs layers or AlxGa1-xOne kind in As；Wherein：
The GaAs substrates 14 are the GaAs substrates of N-shaped doping, and the thickness range of GaAs substrates 14 is 200~700 microns,
Doping concentration is 1 × 1017—1×1018cm-3；The thickness range of the GaAs cushions 13 is 200~1000nm；
The 5th GaInAs protected acidics layer the 12, the 5th GaInP alkalescence protective layer 11, the 4th GaInAs protected acidics layer
10th, the 4th GaInP alkalescence protective layer 9, the 3rd GaInAs protected acidics layer the 8, the 3rd GaInP alkalescence protective layer 7, the 2nd GaInAs
Protected acidic layer the 6, the 2nd GaInP alkalescence protective layer 5, GaInAs protected acidics layer the 4, the first GaInP alkalescence protective layers 3
Thickness range is all 50~200nm；
The thickness range of the sacrifice layer 2 is 20~100nm.
When sacrifice layer 2 is AlxGa1-xDuring As：0.6≤x.
Fig. 1, Fig. 2 and Fig. 3 are referred to, a kind of thin film gallium arsenide solar cell substrate is multiplexed the processing work of substrate protective structure
Skill, comprises the following steps：
Step 101, using metal organic chemical vapor deposition technology, growth temperature range is 500 DEG C -800 DEG C, is given birth to successively
Grow the substrate protective structure described in Fig. 1；
Step 102, corrode corrosion sacrifice layer 2 using HF, peel away GaAs substrates and GaAs batteries；The HF corrosive liquids
Proportioning be HF and H2The volume ratio of O is 1:1；
Step 103, the method removal substrate protective layer using chemical attack；Concretely comprise the following steps：
First GaInP alkalescence protective layer etching process be：
Configuration erosion caustic corrosion liquid, the erosion caustic corrosion liquid includes hydrochloric acid and water, and hydrochloric acid is 1 with the volume ratio of water:1, erosion alkali is rotten
Erosion liquid temperature degree is normal temperature, and etching time is 30s~90s；
Ground floor GaInAs protected acidics layer etching process be：
Configuration erosion acid corrosion liquid, the erosion acid corrosion liquid includes ammoniacal liquor and hydrogen peroxide, and ammoniacal liquor is 1 with the volume ratio of hydrogen peroxide:
9, erosion acid corrosion liquid temperature range is 35 DEG C~45 DEG C, and etching time is 3min~5min；
2nd GaInP alkalescence protective layer etching process be：
Configuration erosion caustic corrosion liquid, the erosion caustic corrosion liquid includes hydrochloric acid and water, and hydrochloric acid is 1 with the volume ratio of water:1, erosion alkali is rotten
Erosion liquid temperature degree is normal temperature, and etching time is 30s~90s；
The second layer GaInAs protected acidics layer etching process be：
Configuration erosion acid corrosion liquid, the erosion acid corrosion liquid includes ammoniacal liquor and hydrogen peroxide, and ammoniacal liquor is 1 with the volume ratio of hydrogen peroxide:
9, erosion acid corrosion liquid temperature range is 35 DEG C~45 DEG C, and etching time is 3min~5min；
3rd GaInP alkalescence protective layer etching process be：
Configuration erosion caustic corrosion liquid, the erosion caustic corrosion liquid includes hydrochloric acid and water, and hydrochloric acid is 1 with the volume ratio of water:1, erosion alkali is rotten
Erosion liquid temperature degree is normal temperature, and etching time is 30s~90s；
Third layer GaInAs protected acidics layer etching process be：
Configuration erosion acid corrosion liquid, the erosion acid corrosion liquid includes ammoniacal liquor and hydrogen peroxide, and ammoniacal liquor is 1 with the volume ratio of hydrogen peroxide:
9, erosion acid corrosion liquid temperature range is 35 DEG C~45 DEG C, and etching time is 3min~5min；
4th GaInP alkalescence protective layer etching process be：
Configuration erosion caustic corrosion liquid, the erosion caustic corrosion liquid includes hydrochloric acid and water, and hydrochloric acid is 1 with the volume ratio of water:1, erosion alkali is rotten
Erosion liquid temperature degree is normal temperature, and etching time is 30s~90s；
4th layer of GaInAs protected acidic layer etching process be：
Configuration erosion acid corrosion liquid, the erosion acid corrosion liquid includes ammoniacal liquor and hydrogen peroxide, and ammoniacal liquor is 1 with the volume ratio of hydrogen peroxide:
9, erosion acid corrosion liquid temperature range is 35 DEG C~45 DEG C, and etching time is 3min~5min；
5th GaInP alkalescence protective layer etching process be：
Configuration erosion caustic corrosion liquid, the erosion caustic corrosion liquid includes hydrochloric acid and water, and hydrochloric acid is 1 with the volume ratio of water:1, erosion alkali is rotten
Erosion liquid temperature degree is normal temperature, and etching time is 30s~90s；
Layer 5 GaInAs protected acidics layer etching process be：
Configuration erosion acid corrosion liquid, the erosion acid corrosion liquid includes ammoniacal liquor and hydrogen peroxide, and ammoniacal liquor is 1 with the volume ratio of hydrogen peroxide:
9, erosion acid corrosion liquid temperature range is 35 DEG C~45 DEG C, and etching time is 3min~5min；
Step 104, cleaned with deionized water..
Embodiments of the invention have been described in detail above, but the content is only presently preferred embodiments of the present invention,
It is not to be regarded as limiting practical range of the invention.All impartial changes made according to the present patent application scope and improvement etc.,
All should still belong within patent covering scope of the invention.
Claims (2)
1. the substrate protective structure that a kind of thin film gallium arsenide solar cell substrate is multiplexed, it is characterised in that：Including：GaAs substrates
(14) the GaAs cushions (13) on GaAs substrates (14), are grown on, the 5th GaInAs on GaAs cushions (13) is grown on
Protected acidic layer (12), is grown on the 5th GaInP alkalescence protective layer (11) on the 5th GaInAs protected acidics layer (12), growth
In the 4th GaInAs protected acidics layer (10) on the 5th GaInP alkalescence protective layer (11), the acid guarantors of the 4th GaInAs are grown on
The 4th GaInP alkalescence protective layer (9) on sheath (10), is grown on the 3rd GaInAs on the 4th GaInP alkalescence protective layer (9)
Protected acidic layer (8), is grown on the 3rd GaInP alkalescence protective layer (7) on the 3rd GaInAs protected acidics layer (8), is grown on
The 2nd GaInAs protected acidics layer (6) on 3rd GaInP alkalescence protective layer (7), are grown on the 2nd GaInAs protected acidics layer
(6) the 2nd GaInP alkalescence protective layer (5) on, the GaInAs being grown on the 2nd GaInP alkalescence protective layer (5) is acid
Protective layer (4), is grown on GaInP alkalescence protective layer (3) on GaInAs protected acidics layer (4), is grown on first
Sacrifice layer (2) on GaInP alkalescence protective layer (3), is grown on the GaAs batteries (1) on sacrifice layer (2)；The sacrifice layer (2)
It is AlAs layers or AlxGa1-xOne kind in As；Wherein：
The GaAs substrates that the GaAs substrates (14) are adulterated for N-shaped, the thickness range of GaAs substrates (14) is 200~700 microns,
Doping concentration is 1 × 1017—1×1018cm-3；The thickness range of the GaAs cushions (13) is 200~1000nm；
5th GaInAs protected acidics layer (12), the 5th GaInP alkalescence protective layer (11), the 4th GaInAs protected acidics layer
(10), the 4th GaInP alkalescence protective layer (9), the 3rd GaInAs protected acidics layer (8), the 3rd GaInP alkalescence protective layer (7), the
Two GaInAs protected acidics layer (6), the 2nd GaInP alkalescence protective layer (5), GaInAs protected acidics layer (4), first
The thickness range of GaInP alkalescence protective layer (3) is all 50~200nm；
The thickness range of the sacrifice layer (2) is 20~100nm；
0.6≤x。
2. a kind of technique for processing substrate protective structure described in claim 1, comprises the following steps：
Step 101, using metal organic chemical vapor deposition technology, growth temperature range is 500 DEG C -800 DEG C, is grown successively
Substrate protective structure described in claim 1；
Step 102, using HF corrode corrosion sacrifice layer (2), peel away GaAs substrates and GaAs batteries；The HF corrosive liquids
It is HF and H to match2The volume ratio of O is 1:1；
Step 103, the method removal substrate protective layer using chemical attack；Concretely comprise the following steps：
First GaInP alkalescence protective layer etching process be：
Configuration erosion caustic corrosion liquid, the erosion caustic corrosion liquid includes hydrochloric acid and water, and hydrochloric acid is 1 with the volume ratio of water:1, lose caustic corrosion liquid
Temperature is normal temperature, and etching time is 30s~90s；
Ground floor GaInAs protected acidics layer etching process be：
Configuration erosion acid corrosion liquid, the erosion acid corrosion liquid includes ammoniacal liquor and hydrogen peroxide, and ammoniacal liquor is 1 with the volume ratio of hydrogen peroxide:9, erosion
Acid corrosion liquid temperature range is 35 DEG C~45 DEG C, and etching time is 3min~5min；
2nd GaInP alkalescence protective layer etching process be：
Configuration erosion caustic corrosion liquid, the erosion caustic corrosion liquid includes hydrochloric acid and water, and hydrochloric acid is 1 with the volume ratio of water:1, lose caustic corrosion liquid
Temperature is normal temperature, and etching time is 30s~90s；
The second layer GaInAs protected acidics layer etching process be：
Configuration erosion acid corrosion liquid, the erosion acid corrosion liquid includes ammoniacal liquor and hydrogen peroxide, and ammoniacal liquor is 1 with the volume ratio of hydrogen peroxide:9, erosion
Acid corrosion liquid temperature range is 35 DEG C~45 DEG C, and etching time is 3min~5min；
3rd GaInP alkalescence protective layer etching process be：
Configuration erosion caustic corrosion liquid, the erosion caustic corrosion liquid includes hydrochloric acid and water, and hydrochloric acid is 1 with the volume ratio of water:1, lose caustic corrosion liquid
Temperature is normal temperature, and etching time is 30s~90s；
Third layer GaInAs protected acidics layer etching process be：
Configuration erosion acid corrosion liquid, the erosion acid corrosion liquid includes ammoniacal liquor and hydrogen peroxide, and ammoniacal liquor is 1 with the volume ratio of hydrogen peroxide:9, erosion
Acid corrosion liquid temperature range is 35 DEG C~45 DEG C, and etching time is 3min~5min；
4th GaInP alkalescence protective layer etching process be：
Configuration erosion caustic corrosion liquid, the erosion caustic corrosion liquid includes hydrochloric acid and water, and hydrochloric acid is 1 with the volume ratio of water:1, lose caustic corrosion liquid
Temperature is normal temperature, and etching time is 30s~90s；
4th layer of GaInAs protected acidic layer etching process be：
Configuration erosion acid corrosion liquid, the erosion acid corrosion liquid includes ammoniacal liquor and hydrogen peroxide, and ammoniacal liquor is 1 with the volume ratio of hydrogen peroxide:9, erosion
Acid corrosion liquid temperature range is 35 DEG C~45 DEG C, and etching time is 3min~5min；
5th GaInP alkalescence protective layer etching process be：
Configuration erosion caustic corrosion liquid, the erosion caustic corrosion liquid includes hydrochloric acid and water, and hydrochloric acid is 1 with the volume ratio of water:1, lose caustic corrosion liquid
Temperature is normal temperature, and etching time is 30s~90s；
Layer 5 GaInAs protected acidics layer etching process be：
Configuration erosion acid corrosion liquid, the erosion acid corrosion liquid includes ammoniacal liquor and hydrogen peroxide, and ammoniacal liquor is 1 with the volume ratio of hydrogen peroxide:9, erosion
Acid corrosion liquid temperature range is 35 DEG C~45 DEG C, and etching time is 3min~5min；
Step 104, cleaned with deionized water.
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