CN105580142A - Light-emitting dies incorporating wavelength-conversion materials and related methods - Google Patents

Light-emitting dies incorporating wavelength-conversion materials and related methods Download PDF

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Publication number
CN105580142A
CN105580142A CN201480053613.XA CN201480053613A CN105580142A CN 105580142 A CN105580142 A CN 105580142A CN 201480053613 A CN201480053613 A CN 201480053613A CN 105580142 A CN105580142 A CN 105580142A
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electrode layer
dorsum electrode
contact
supporting substrate
groove
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CN105580142B (en
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沈洺奭
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

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Abstract

Semiconductor dies such as light-emitting elements (LEEs) are coated with a polymeric binder, which is subsequently cured to form a composite wafer of a solid binder material and the dies suspended therein. The composite wafer may be divided into free-standing "white dies" each composed of the die and a portion of the cured binder that at least partially surrounds the die. The binder may advantageously contain wavelength-conversion material such as a phosphor or a collection of quantum dots. Various mold substrates and/or molds may be utilized to secure the semiconductor dies and/or to prevent coating of the contacts of the dies during the coating process.

Description

Solar cell
Technical field
The present invention relates to a kind of solar cell.
Background technology
A kind of method manufactured for the solar cell of solar power generation is as follows.First, after preparing substrate, form dorsum electrode layer on the substrate, and by dorsum electrode layer described in laser patterning, thus form multiple back electrode.
Then, described back electrode sequentially forms light absorbing zone, resilient coating and high resistant resilient coating.Various scheme can be used widely to form described light absorbing zone, described scheme comprises and being formed based on Cu (In, Ga) Se by evaporating copper (Cu), indium (In), gallium (Ga) and selenium (Se) at the same time or separately 2(CIGS) scheme of light absorbing zone, and the scheme performing selenization after forming metal precursor (metallicprecursor).The band gap (energybandgap) of light absorbing zone is in the scope of about 1eV to about 1.8eV.
Then, on described light absorbing zone, the resilient coating comprising cadmium sulfide (CdS) is formed by sputtering technology.The band gap of described resilient coating is in the scope of about 2.2eV to about 2.4eV.After this, described resilient coating is formed the high resistant resilient coating comprising zinc oxide (ZnO).The band gap of described high resistant resilient coating is in the scope of about 3.1eV to about 3.3eV.
Next, at described light absorbing zone, described resilient coating, and form groove pattern in described high resistant resilient coating.
Then, transparent conductive material is deposited on described high resistant resilient coating, and described transparent conductive material is filled in described groove pattern.Therefore, described high resistant resilient coating forms transparent electrode layer, and in described groove pattern, form connection wire respectively.Such as, for material and the aluminium (Al) being connected wire and can comprising doping zinc-oxide of transparency conducting layer.The band gap of transparent electrode layer is in the scope of about 3.1eV to 3.3eV.
After this, transparent electrode layer forms groove pattern, thus form multiple solar cell.Transparency electrode and high resistant cushion corresponding with battery respectively.Transparency electrode and high resistant buffering can be set to the form of strip or matrix (matrix).
Transparency electrode is not alignd with back electrode, and transparency electrode is electrically connected with back electrode respectively by connecting wire.Therefore, multiple solar cell can be electrically connected with being one another in series.
Meanwhile, light absorbing zone is formed on dorsum electrode layer.In detail, described light absorbing zone is formed on the dorsum electrode layer of patterning.
But, due to the boundary face between light absorbing zone and dorsum electrode layer, or the bond strength in the boundary face between light absorbing zone and the supporting substrate passing through patterning and expose is weak, light absorbing zone may be stripped (delaminated) after deposit.The stripping of light absorbing zone may increase the all-in resistance of solar cell, and therefore the whole efficiency of solar cell can reduce.
Therefore, a kind of solar cell with the novel structure that light absorbing zone can be prevented to be stripped is needed.
Summary of the invention
Technical problem
The invention provides a kind of solar cell with the novel structure of the photoelectric conversion efficiency of improvement.
Technical scheme
According to the first embodiment, solar cell comprises supporting substrate, the dorsum electrode layer on described supporting substrate, the first groove on described dorsum electrode layer, the light absorbing zone on described dorsum electrode layer, and on described light absorbing zone before electrode layer.The described supporting substrate exposed by described first groove has the average surface roughness (Ra1) in 28nm to 100nm scope.
According to the second embodiment, solar cell comprises supporting substrate, the dorsum electrode layer on described supporting substrate, the first groove on described dorsum electrode layer, the light absorbing zone on described dorsum electrode layer, and on described light absorbing zone before electrode layer.Described dorsum electrode layer comprises the first contact-making surface and the second contact-making surface, the top surface of described dorsum electrode layer contacts at described first contact-making surface place with described light absorbing zone, and the side of the described dorsum electrode layer exposed by described first groove is contacted at described second contact-making surface place with described light absorbing zone.Described supporting substrate comprises the 3rd contact-making surface, and the top surface of the described supporting substrate exposed by described first groove is contacted at described 3rd contact surface place with described light absorbing zone.The average surface roughness of the average surface roughness of described first contact-making surface, the average surface roughness of described second contact-making surface, described 3rd contact-making surface is in the scope of 28nm to 100nm.
Beneficial effect
As mentioned above, according to the solar cell of embodiment, the bond strength between described light absorbing zone and described supporting substrate and between described light absorbing zone and described dorsum electrode layer can be improved.
In other words, according to the solar cell of described embodiment, can by described supporting substrate and the surface roughness of described dorsum electrode layer that contacts with described light absorbing zone be brought up in predetermined scope the bond strength improved between described light absorbing zone and described supporting substrate and between described light absorbing zone and described dorsum electrode layer.
Correspondingly, can prevent described light absorbing zone from peeling off from described supporting substrate or described dorsum electrode layer after deposition.
Therefore, according to the solar cell of described embodiment and the method for the described solar cell of manufacture, can prevent described light absorbing zone from peeling off, thus improve the whole efficiency of described solar cell.
Accompanying drawing explanation
Fig. 1 shows the plane graph of the solar panel according to embodiment;
Fig. 2 shows the sectional view of the solar cell according to embodiment;
Fig. 3 shows the sectional view of supporting substrate according to the solar cell of embodiment and dorsum electrode layer;
Fig. 4 shows the sectional view of the supporting substrate of the solar cell according to embodiment, dorsum electrode layer and light absorbing zone;
Fig. 5 and Fig. 6 shows the sectional view of the etching work procedure of the solar cell according to embodiment;
Fig. 7 to Figure 14 shows the sectional view of the method for the manufacture solar cell according to embodiment.
Embodiment
To in the description of the present embodiment, be to be understood that, when layer (or film), region, pattern or structure are called at another substrate, another layer (or film), another region, another liner, or another pattern " on " or D score time, its can " directly " or " indirectly " at another substrate, another layer (or film), another region, another liner, or on another pattern, also can there is one or more intermediate layer.Such position of layer is described with reference to accompanying drawing.
Conveniently or clear, the thickness of each layer (or film) shown in figure, each region, each pattern or each structure and size may be exaggerated, ignore or schematically draw.In addition, its full-size(d) of size incomplete reaction of above element.
Hereinafter, embodiments of the invention are described in detail with reference to accompanying drawing.
Hereinafter, the solar cell according to the first and second embodiments is described in detail with reference to Fig. 1 to Fig. 4.Fig. 1 shows the plane graph of the solar panel according to embodiment.Fig. 2 shows the sectional view of the solar cell according to embodiment.Fig. 3 shows the sectional view of supporting substrate according to the solar cell of embodiment and dorsum electrode layer.Fig. 4 shows the sectional view of the supporting substrate of the solar cell according to embodiment, dorsum electrode layer and light absorbing zone.
Referring to figs. 1 to Fig. 4, comprise supporting substrate 100, dorsum electrode layer 200, light absorbing zone 300, resilient coating 400, front electrode layer 500 and multiple link 600 according to the solar cell of the first embodiment.
Supporting substrate 100 is tabular, and supports dorsum electrode layer 200, light absorbing zone 300, resilient coating 400, front electrode layer 500 and link 600.
Supporting substrate 100 can comprise insulator.Supporting substrate 100 can be glass substrate, plastic base or metal substrate.Meanwhile, supporting substrate 100 can be soda-lime glass substrate.Supporting substrate 100 can be transparent.Supporting substrate 100 can be flexibility or rigidity.
Dorsum electrode layer 200 is arranged on supporting substrate 100.Dorsum electrode layer 200 is conductive layers.Such as, dorsum electrode layer 200 can comprise the metal of such as molybdenum (Mo).
In addition, dorsum electrode layer 200 can comprise at least two-layer.In this case, described layer can comprise identical metal or mutually different metals.
Dorsum electrode layer 200 can be formed with the first groove TH1 wherein.First groove TH1 has open area to expose the top surface of supporting substrate 100.When watching in plan view, the first groove TH1 can have the shape extended in a first direction.
Each first groove TH1 can have the width in the scope of about 80 μm to about 200 μm, but the present embodiment is not limited to this.
Dorsum electrode layer 200 is divided into multiple back electrode by the first groove TH1.That is, multiple back electrode can be limited by the first groove TH1.
Back electrode is spaced by the first groove TH1.Back electrode is arranged as the shape of strip (strip).
Or back electrode can be arranged as the shape of matrix (matrix).In this case, when watching in plan view, the first groove TH1 can be set to the shape of trellis.
The surface of dorsum electrode layer 200 and the surface of supporting substrate 100 exposed by the first groove TH1 can be set to concavo-convex shape (concavo-convexshape).In addition, the surface of dorsum electrode layer 200 and the surface of supporting substrate 100 exposed by the first groove TH1 can be set to concavo-convex shape to have high unevenness (univeness), that is, high surface roughness (roughness).Concavo-convex form can comprise various shape, such as triangular shaped, rectangular shape, round-shaped.
The surface of the surface of dorsum electrode layer 200 and the supporting substrate 100 by the first groove TH1 exposure is described below in detail.
Light absorbing zone 300 can be arranged on dorsum electrode layer 20.In addition, the material forming light absorbing zone 300 is filled in the first groove TH1.
Light absorbing zone 300 can comprise I-III-VI group compound.Such as, light absorbing zone 300 can comprise Cu (In, Ga) Se 2(CIGS) crystal structure (crystalstructure), Cu (In) Se 2crystal structure or Cu (Ga) Se 2crystal structure.
Light absorbing zone 300 can have the band gap in the scope of about 1eV to about 1.8eV, but embodiment is not limited to this.
Resilient coating 400 is arranged on light absorbing zone 300.Resilient coating 400 directly contacts with light absorbing zone 300.
High resistant resilient coating can be arranged on resilient coating 400 further.High resistant resilient coating can comprise the zinc oxide (i-ZnO) of non-impurity.The band gap of high resistant resilient coating can in the scope of about 3.1eV to about 3.3eV, but embodiment is not limited to this.
Second groove TH2 can be formed in resilient coating 400.Second groove TH2 can for being used for exposing the open area of top surface of dorsum electrode layer 200.When watching in plan view, the second groove TH2 can extend in one direction.The width of the second groove TH2 can in the scope of about 80 μm to about 200 μm, but embodiment is not limited to this.
By the second groove TH2, resilient coating 400 can be restricted to multiple resilient coating.That is, resilient coating 400 can be divided into multiple resilient coating by the second groove TH2.
Front electrode layer (frontelectrodelayer) 500 is arranged on resilient coating 400.In detail, front electrode layer 500 is arranged on high resistant resilient coating.Front electrode layer 500 is transparency conducting layers.In addition, the resistance of the resistance ratio dorsum electrode layer 500 of front electrode layer 500 is high.
Front electrode layer 500 comprises oxide.Such as, before composition, the material of electrode layer 500 can comprise aluminium (AZO), indium-zinc oxide (IZO), the indium tin oxide (ITO) of doping zinc-oxide.
Front electrode layer 500 comprises the link 600 be placed in the second groove TH2.
3rd groove TH3 is formed in resilient coating 400 and front electrode layer 500.3rd groove TH3 can pass part or all of resilient coating 400, high resistant resilient coating and front electrode layer 500.In other words, the 3rd groove TH3 can expose the top surface of dorsum electrode layer 200.
The contiguous second groove TH2 of 3rd groove TH3.In detail, the 3rd groove TH3 is arranged on the side of the second groove TH2.In other words, when watching in plan view, the 3rd groove TH3 is formed on the second groove TH2 side, and parallel with the second groove TH2.3rd groove TH3 can extend in a first direction.
3rd groove TH3 is through front electrode layer 500.In detail, the 3rd groove TH3 can pass light absorbing zone 300, resilient coating 400 and/or part or whole high resistant resilient coating.
Front electrode layer 500 can be divided into multiple front electrode by the 3rd groove TH3.In other words, front electrode can be limited by the 3rd groove TH3.
Front electrode can have the shape corresponding with the shape of back electrode.In other words, front electrode can be arranged as the shape of strip.Or front electrode can be arranged as the shape of matrix.
In addition, multiple solar cell C1, C2 ... limited by the 3rd groove TH3.In detail, solar cell C1, C2 ... limited by the second groove TH2 and the 3rd groove TH3.In other words, solar cell C1 and C2 is divided into according to the solar cell of embodiment by the second groove TH2 and the 3rd groove TH3.In addition, solar cell C1 and C2 is interconnected in the second direction of crossing with first direction (crossing).In other words, electric current can flow through solar cell C1 and C2 in a second direction.
In other words, solar panel 10 comprises supporting substrate 100 and solar cell C1 and C2.Solar cell C1 and C2 is arranged on supporting substrate 100 spaced apart relation to each other.In addition, solar cell C1 with C2 is one another in series by link 600 and is connected.
Link 600 is arranged in the second groove TH2.Link 600 in the past electrode layer 500 is connected to downward-extension with dorsum electrode layer 200.Such as, link 600 extends from electrode before the first battery C1 and is connected to the back electrode of the second battery C2.
Correspondingly, mutually contiguous battery is connected to each other by link 600.In detail, link 600 connects the front electrode and back electrode that are included in each solar cell be mutually close to.
Link 600 is combined (integrated) with front electrode layer 600.That is, the material forming link 600 is identical with the material of electrode layer 500 before composition.
Hereafter describe supporting substrate 100 according to the first embodiment and the second embodiment and dorsum electrode layer 200 in detail with reference to Fig. 3 to Fig. 6.
With reference to Fig. 3, according to the solar cell of the first embodiment, dorsum electrode layer 200 is formed on supporting substrate 100, and is divided into multiple back electrode by the first groove TH1.
In this case, the surface of supporting substrate 100 and the surface of dorsum electrode layer 200 can be set to concavo-convex shape.
In detail, concavo-convex shape can be set to by the surface 110 of the supporting substrate 100 of the first groove TH1 exposure.The surface 110 of supporting substrate 100 can have higher average surface roughness.In detail, the average surface roughness Ra1 on the surface 110 of supporting substrate can in the scope of about 28nm to about 100nm.
When average surface roughness (averagesurfaceroughness) Ra1 is less than 28nm, light absorbing zone 300 may peel off (delaminated) on supporting substrate 100.When average surface roughness Ra1 is more than 100nm, the working (machining) efficiency of etching work procedure may reduce.
In addition, dorsum electrode layer 200 top surface 210 and concavo-convex shape can be set to by the side 220 of dorsum electrode layer 200 that the first groove TH1 exposes.In addition, the top surface 210 of dorsum electrode layer 200 and side 220 can have high average surface roughness.In detail, the top surface 210 of dorsum electrode layer 200 and the average surface roughness Ra2 of side 220 can in the scope of about 28nm to about 100nm.
When average surface roughness Ra2 is less than 28nm, light absorbing zone 300 may be peeled off on dorsum electrode layer 200.When average surface roughness Ra2 is more than 100nm, the working (machining) efficiency of etching work procedure may reduce.
The average surface roughness Ra1 on the surface 110 of supporting substrate 100 can be different with the average surface roughness Ra2 of the top surface 210 of dorsum electrode layer 200 and side 220.
In detail, the average surface roughness Ra1 on the surface 110 of supporting substrate 100 can be greater than the top surface 210 of dorsum electrode layer 200 and the average surface roughness Ra2 of side 220.Such as, the average surface roughness Ra1 on the surface 110 of supporting substrate 100 can than the average surface roughness Ra2 of the top surface 210 of dorsum electrode layer 200 and side 220 larger about 1nm to about 10nm.
When difference between the average surface roughness Ra1 on the surface 110 of supporting substrate 100 and the average surface roughness Ra2 of the top surface 210 of dorsum electrode layer 200 and side 220 exceeds above scope, due to the difference of the bond strength between supporting substrate 100 and light absorbing zone 300 and between dorsum electrode layer 200 and light absorbing zone 300, light absorbing zone 300 may be peeled off.
With reference to Fig. 4, according to the solar cell of the second embodiment, dorsum electrode layer 200 is formed on supporting substrate 100, and dorsum electrode layer 200 is divided into multiple back electrode by the first groove TH1.Then, light absorbing zone 300 is filled in dorsum electrode layer 200 while being formed on dorsum electrode layer 200.
Correspondingly, the contact-making surface between supporting substrate 100 and light absorbing zone 300 is formed on supporting substrate 100, and the contact-making surface between dorsum electrode layer 200 and light absorbing zone 300 is formed on back electrode 200.
In detail, dorsum electrode layer 200 is formed with the first contact-making surface 710 and the second contact-making surface 720 thereon, the top surface of dorsum electrode layer 200 contacts at the first contact-making surface 710 place with light absorbing zone 300, and the side of the dorsum electrode layer 200 exposed by the first groove TH1 is contacted at the second contact-making surface 720 place with light absorbing zone 300.
In addition, supporting substrate 100 is formed with the 3rd contact-making surface 730 thereon, and the upper surface of the supporting substrate 100 exposed by the first groove TH1 is contacted with light absorbing zone 300 at described 3rd contact-making surface 730.
In this case, the first contact-making surface 710 of dorsum electrode layer 200 and the second contact-making surface 720 can be set to concavo-convex shape.In addition, the 3rd contact-making surface 730 of supporting substrate 100 can be set to concavo-convex shape.
In addition, the first contact-making surface 710, second contact-making surface 720 and the 3rd contact-making surface 730 can have higher average surface roughness.In detail, the first contact-making surface 710, second contact-making surface 720 and the 3rd contact-making surface 730 can have the average surface roughness in the scope of about 20nm to about 100nm.
When average surface roughness is less than 28nm, the light absorbing zone 300 be formed on dorsum electrode layer 200 and supporting substrate 100 may be peeled off.When average surface roughness is more than 100nm, the working (machining) efficiency of etching work procedure may reduce.
In addition, the first contact-making surface 710, second contact-making surface 720 and the 3rd contact-making surface 730 can have mutually different average surface roughness.In detail, the average surface roughness of the 3rd contact-making surface 730 can be greater than the average surface roughness of the first contact-making surface 710 and the average surface roughness of the second contact-making surface 720.Such as, the average surface roughness of the 3rd contact-making surface 730 can than the average surface roughness of the average surface roughness of the first contact-making surface 710 and the second contact-making surface 720 large (greater) approximately 1nm to about 10nm.
When difference between the 3rd contact-making surface 730 and the first contact-making surface 710 and the difference between the 3rd contact-making surface 730 and the second contact-making surface 720 exceed above scope, due to the difference of the bond strength between supporting substrate 100 and light absorbing zone 300, between dorsum electrode layer 200 and light absorbing zone 300, light absorbing zone 300 may be peeled off.
Hereafter with reference to Fig. 5 and Fig. 6, supporting substrate 100 according to the first embodiment and the second embodiment and dorsum electrode layer 200 are described.
With reference to Fig. 5, dorsum electrode layer 200 is formed on supporting substrate 100, is patterned and is divided into multiple back electrode by the first groove TH1.
Then, the surface of supporting substrate 100, the top surface of dorsum electrode layer 200 and the side by the dorsum electrode layer 200 of the first groove TH1 exposure can be etched by dry etching process.In detail, the surface of supporting substrate 100 and the top surface of dorsum electrode layer 200 and side can by using sulphur hexafluoride (SF 6) gas come dry etching process etch.
In detail, sulphur hexafluoride (SF 6) gas is applied to supporting substrate 100 and is wherein formed with the dorsum electrode layer 200 of the first groove TH1, and the surface of the surface of supporting substrate 100 and dorsum electrode layer 200 can be etched.Such as, arrange supporting substrate 100 and dorsum electrode layer 200 in vacuum chamber after, sulphur hexafluoride (SF 6) gas is introduced in vacuum chamber with the surface on the surface and dorsum electrode layer 200 that etch supporting substrate 100.
Correspondingly, sulphur (S) or fluorine (F) be can be contained in the top surface of supporting substrate 100 and the top surface of dorsum electrode layer 200 and side exposed by the first groove TH1.
The surface of supporting substrate 100 and dorsum electrode layer 200 can use SF simultaneously 6gas etch.In other words, the surface of supporting substrate 100 and dorsum electrode layer 200, by an operation etching, makes it possible to improve the surface roughness of supporting substrate 100 and the surface roughness of dorsum electrode layer 200.
After this, according to the solar cell of the present embodiment, supporting substrate and dorsum electrode layer can use SF 6gas etches simultaneously at one time, instead of etches supporting substrate and dorsum electrode layer separately, makes it possible to improve working (machining) efficiency.
In addition, with reference to Fig. 6, the surface of supporting substrate 100 and the top surface of dorsum electrode layer and side can be etched by wet etching process.
Such as, supporting substrate 100 and dorsum electrode layer 200 can etch independently by using mutually different etchants.Such as, supporting substrate 100 can use the first etchant etching, and dorsum electrode layer can use the second etchant etching.
Particularly, the surface of supporting substrate 100 shape that the etchant based on hydrofluoric acid can be used to be formed as concavo-convex.In addition, dorsum electrode layer 200 can use the etchant based on phosphoric acid, acetic acid or nitric acid to etch, and makes to form concavo-convex pattern on the surface of dorsum electrode layer 200.
The etching process of supporting substrate 100 and dorsum electrode layer 200 can side by side or sequentially perform.
By dry ecthing or wet etching process, can form the pattern of concaveconvex shape on the surface of supporting substrate 100 and dorsum electrode layer, due to the pattern that this is concavo-convex, the average surface roughness of supporting substrate 100 and dorsum electrode layer 200 can increase.
According to relevant technology, when the dorsum electrode layer being formed with the first groove wherein forms light absorbing zone, the bond strength of light absorbing zone is reduced by the first groove, makes light absorbing zone peel off and not deposit completely.Correspondingly, the resistance of solar cell may increase, and makes the whole efficiency of solar cell may be lower.
Therefore, according to the solar cell of embodiment, by forming the first groove and formed after surface roughness brought up to predetermined scope by predetermined concavo-convex pattern on supporting substrate and dorsum electrode layer, deposition light absorbing zone.
Correspondingly, due to the raising of surface roughness, bonded area (bondingarea) can increase, and the bond strength between dorsum electrode layer and light absorbing zone or between supporting substrate and light absorbing zone can be improved.Correspondingly, after light absorbing zone is formed, can prevent light absorbing zone from peeling off.
Therefore, the solar cell of the present embodiment can show the photoelectric conversion efficiency of improvement.
Hereafter in further detail the present invention is described with reference to test examples.Described test examples is only to describe illustrative object of the present invention in detail.Therefore, the present invention is not limited to following test examples.
test examples
The dorsum electrode layer comprising molybdenum is formed on glass or plastic support substrate, is patterned and is divided into multiple back electrode.
After this, by by SF 6gas (dry ecthing) or etchant are applied to dorsum electrode layer and on the supporting substrate that exposed by Patternized technique, dorsum electrode layer and supporting substrate form concavo-convex pattern, makes surface roughness can be thus lifted to predetermined scope.
result
The stripping of light absorbing zone is confirmed by the surface roughness changing supporting substrate and back electrode equably.
The scope of surface roughness and the stripping of light absorbing zone as shown in table 1.
table 1
With reference to Fig. 1, along with the surface roughness of supporting substrate and the surface roughness of dorsum electrode layer increase, light absorbing zone may can not be peeled off.
Especially, when the surface roughness of supporting substrate and the surface roughness of dorsum electrode layer are about 28nm or larger, light absorbing zone may can not be peeled off.
In addition, when the surface roughness of supporting substrate is greater than the surface roughness of dorsum electrode layer, may not prevent light absorbing zone from peeling off.
In other words, along with the surface roughness of supporting substrate and the surface roughness of dorsum electrode layer increase, the bond strength of the bond strength between light absorbing zone and dorsum electrode layer or light absorbing zone and supporting substrate improves.Correspondingly, after light absorbing zone is formed, can prevent light absorbing zone from peeling off.Therefore, efficiency can be prevented to be destroyed according to the solar cell of embodiment, the whole efficiency of solar cell is improved.
The method of the manufacture solar cell according to embodiment is hereafter described with reference to Fig. 7 to Figure 14.Fig. 7 to Figure 14 illustrates the view manufactured according to the method for the solar cell of embodiment.
First, with reference to Fig. 7, supporting substrate 100 forms dorsum electrode layer 200.
Then, with reference to Fig. 8, the first groove TH1 is formed by patterned back electrodes layer 200.Correspondingly, supporting substrate 100 forms multiple back electrode.Dorsum electrode layer 200 can carry out patterning by laser.
First groove TH1 can expose the top surface of supporting substrate 100, and can have the width of scope in 80 μm to about 200 μm.
In addition, extra play, such as anti-diffusion layer (anti-diffusionlayer), can be inserted between supporting substrate 100 and dorsum electrode layer 200.In this case, the first groove TH1 exposes the top surface of extra play.
Next, with reference to Fig. 9, the top surface of dorsum electrode layer 200 and side, and etched by the top surface of the supporting substrate 100 of the first groove TH1 exposure.Etch process can be dry etching process or wet etching process, and can perform etch process at the same time or separately about supporting substrate 100 and dorsum electrode layer 200.
By above etch process, the top surface of dorsum electrode layer 200 and side, and irregular pattern can be formed thereon by the top surface of supporting substrate 100 that the first groove TH1 exposes and maybe can have the average surface roughness in above-mentioned scope.
Then, with reference to Figure 10, light absorbing zone 300 is formed on dorsum electrode layer 200.Light absorbing zone 300 can be formed by sputtering technology or evaporation scheme.
In instances, light absorbing zone 300 can by using various scheme to be formed widely, and described scheme comprises by evaporating Cu, In, Ga and Se at the same time or separately to be formed based on Cu (In, Ga) Se 2(CIGS) scheme of light absorbing zone 300, and the scheme forming that metallic precursor film (metallicprecursorfilm) performs selenization process afterwards.
About the details of the selenization formed after metallic precursor layers, metallic precursor layers is formed on back-contact electrode 200 by using the sputtering technology of Cu target, In target or Ga target.
After this, metallic precursor layers is subject to selenization, makes based on Cu (In, Ga) Se 2(CIGS) light absorbing zone 300 is formed.
In addition, use the sputter procedure of Cu target, In target and Ga target and selenidation process to perform simultaneously.
Or, by only using Cu target and In target or only using the sputter procedure of Cu target and Ga target and selenidation process to form CIS or CIG light absorbing zone 300.
Then, with reference to Figure 11, deposit CdS by sputtering technology or chemical bath deposition (CBD), and form resilient coating 400.
Then, zinc oxide can be deposited on resilient coating 400 by depositing operation to form high resistant resilient coating further.Described high resistant resilient coating can be formed by deposition diethyl zinc (DEZ).
High resistant resilient coating can pass through chemical vapour deposition (CVD) (CVD) scheme, metal organic chemical vapor deposition (MOCVD) scheme or ald (ALD) schematic design making.Preferably, high resistant resilient coating can pass through MOCVD schematic design making.
Then, with reference to Figure 12, light absorbing zone 300 and resilient coating 400 partly can be removed and form the second groove TH2.
Second groove TH2 can use the plant equipment of such as blade (tip) or laser equipment to be formed.
Such as, light absorbing zone 300 and resilient coating 400 can carry out patterning by using the blade of width within the scope of about 40 μm to about 180 μm.In addition, the second groove TH2 can be formed by using the laser of wavelength within the scope of about 200nm to about 600nm.
In this case, the width of the second groove TH2 can in the scope of about 100 μm to about 200 μm.Second groove TH2 can expose a part for the top surface of dorsum electrode layer 200.
Next, with reference to Figure 13, transparent conductive material is deposited on resilient coating 400 to form front electrode layer 500.
Transparent conductive material can be deposited and form front electrode layer 500 in the inert gas environment not having oxygen.In detail, front electrode layer 500 can be formed by the zinc oxide of dopant deposition aluminium (Al) in the inert gas environment not having oxygen.
Before being formed, the step of electrode layer can be sputter scheme by RF, such as, use the deposition approach of ZnO target or use the reactive sputtering scheme of Zn target, and in the inert gas environment not having oxygen, the zinc oxide of dopant deposition aluminium (Al) performs.
Front electrode layer 500 is contacted with the dorsum electrode layer 200 exposed by the second groove TH2.
With reference to Figure 14, form the 3rd groove TH3 by the part removing light absorbing zone 300, resilient coating 400 and high resistant resilient coating 500.Therefore, limit multiple front electrode by electrode layer before patterning 500, and the first battery C1, the second battery C2 and the 3rd battery C3.Each 3rd groove TH3 can have the width within the scope of about 80 μm to about 200 μm.
As mentioned above, according to the method for the solar cell of manufacture embodiment, the solar cell of the photoelectric conversion efficiency with improvement can be manufactured.
In other words, according to the solar cell of embodiment, by bringing up to predetermined scope in by the surface roughness on surface of supporting substrate and the dorsum electrode layer that deposits light absorbing zone thereon, the bond strength between light absorbing zone and supporting substrate or between light absorbing zone and dorsum electrode layer can be improved.
Correspondingly, can prevent light absorbing zone from peeling off after deposition.
Therefore, according to the solar cell of embodiment and the method for the described solar cell of manufacture.Can prevent light absorbing zone from peeling off, the whole efficiency of solar cell can be got a promotion.
In this manual " embodiment ", " embodiment ", " example embodiment " etc. any is quoted and represent and be included at least one embodiment of the present invention in conjunction with the special characteristic described by the present embodiment, structure or characteristic.This type of phrase in the text appearance everywhere not necessarily all represents and refers to same embodiment.In addition, when describing concrete feature, structure or characteristic in conjunction with any embodiment, should think that those skilled in the art can in conjunction with other embodiments of the present invention to realize this feature, structure or characteristic.
Although describe the present invention with reference to multiple illustrative embodiment of the present invention, it should be understood that, those skilled in the art can conceive numerous other amendment and embodiments of falling in spirit and scope.More particularly, in the scope of this specification, accompanying drawing and appended claims subject combination arrange part and/or arrange can make a variety of changes and revise.Except for except the change of these parts and/or layout and amendment, substitute that to use also be obvious for those skilled in the art.

Claims (15)

1. a solar cell, comprising:
Supporting substrate;
Dorsum electrode layer on described supporting substrate;
The first groove on described dorsum electrode layer;
Light absorbing zone on described dorsum electrode layer; And
Electrode layer before on described light absorbing zone,
Wherein, the average surface roughness (Ra1) of described supporting substrate exposed by described first groove is in the scope of 28nm to 100nm.
2. solar cell according to claim 1, wherein, the top surface of described dorsum electrode layer and the average surface roughness (Ra2) of the side of described dorsum electrode layer that exposed by described first groove are in the scope of 28nm to 100nm.
3. solar cell according to claim 2, wherein, the described average surface roughness (Ra1) of described supporting substrate and the described average surface roughness (Ra2) of the described top surface of described dorsum electrode layer are different with the described average surface roughness (Ra2) of the described side of described dorsum electrode layer that exposed by described first groove.
4. solar cell according to claim 2, wherein, the described average surface roughness (Ra1) of described supporting substrate is greater than the described average surface roughness (Ra2) of the described average surface roughness (Ra2) of the described top surface of described dorsum electrode layer and the described side by the described dorsum electrode layer of described first groove exposure.
5. solar cell according to claim 4, wherein, the described average surface roughness (Ra1) of described supporting substrate is than the described average surface roughness (Ra2) of the described top surface of described dorsum electrode layer and the large 1nm to 10nm of the described average surface roughness (Ra2) of the described side of described dorsum electrode layer that exposed by described first groove.
6. solar cell according to claim 2, wherein, the surface of described supporting substrate exposed by described first groove and the surface of described dorsum electrode layer are set to concavo-convex shape.
7. solar cell according to claim 6, wherein, the described surface of described supporting substrate, the described top surface of described dorsum electrode layer, or be set to triangular shaped by the described side of described dorsum electrode layer that described first groove exposes, rectangular shape, round-shaped at least one.
8. solar cell according to claim 1, wherein, the surface of described supporting substrate exposed by described first groove, the top surface of described dorsum electrode layer, or comprise sulphur (S) or fluorine (F) by least one in the side of the described dorsum electrode layer of described first groove exposure.
9. a solar cell, comprising:
Supporting substrate;
Dorsum electrode layer on described supporting substrate;
The first groove on described dorsum electrode layer;
Light absorbing zone on described dorsum electrode layer; And
Electrode layer before on described light absorbing zone,
Wherein, described dorsum electrode layer comprises:
First contact-making surface, the top surface of described dorsum electrode layer contacts at described first contact-making surface place with described light absorbing zone; And
Second contact-making surface, the side of the described dorsum electrode layer exposed by described first groove is contacted at described second contact-making surface place with described light absorbing zone, and
Wherein, described supporting substrate comprises the 3rd contact-making surface, and the top surface of the described supporting substrate exposed by described first groove is contacted at described 3rd contact-making surface place with described light absorbing zone; And
The average surface roughness of described first contact-making surface, the average surface roughness of described second contact-making surface, and the average surface roughness of described 3rd contact-making surface is in the scope of 28nm to 100nm.
10. solar cell according to claim 9, wherein, described first contact-making surface to described 3rd contact-making surface is set to concavo-convex shape.
11. solar cells according to claim 10, wherein, described first contact-making surface to described 3rd contact-making surface be set to triangular shaped, rectangular shape, round-shaped at least one.
12. solar cells according to claim 9, wherein, the described average surface roughness of described 3rd contact-making surface is different from the described average surface roughness of the described average surface roughness of described first contact-making surface and described second contact-making surface.
13. solar cells according to claim 9, wherein, the described average surface roughness of described 3rd contact-making surface is greater than the described average surface roughness of described first contact-making surface and the described average surface roughness of described second contact-making surface.
14. solar cells according to claim 13, wherein, the described average surface roughness of described 3rd contact-making surface is than the described average surface roughness of described first contact-making surface and the large 1nm to 10nm of the described average surface roughness of described second contact-making surface.
15. solar cells according to claim 9, wherein, described first contact-making surface to described 3rd contact-making surface comprises sulphur (S) or fluorine (F).
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