CN109638087A - Improve the method and photovoltaic cell of photovoltaic cell back electrode and absorbed layer adhesive force - Google Patents
Improve the method and photovoltaic cell of photovoltaic cell back electrode and absorbed layer adhesive force Download PDFInfo
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- CN109638087A CN109638087A CN201811292291.0A CN201811292291A CN109638087A CN 109638087 A CN109638087 A CN 109638087A CN 201811292291 A CN201811292291 A CN 201811292291A CN 109638087 A CN109638087 A CN 109638087A
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- back electrode
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- 239000000853 adhesive Substances 0.000 title claims abstract description 37
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000000151 deposition Methods 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 12
- 230000007704 transition Effects 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052711 selenium Inorganic materials 0.000 claims description 7
- 239000011669 selenium Substances 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 12
- 239000011733 molybdenum Substances 0.000 abstract description 12
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 204
- 239000000758 substrate Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 6
- 229960002050 hydrofluoric acid Drugs 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical group OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000010748 Photoabsorption Effects 0.000 description 1
- 229910001370 Se alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 235000013399 edible fruits Nutrition 0.000 description 1
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- 238000009434 installation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to technical field of solar, in particular to a kind of method and photovoltaic cell for improving photovoltaic cell back electrode and absorbed layer adhesive force.The method for improving photovoltaic cell back electrode and absorbed layer adhesive force, comprising the following steps: S1 handles the surface of back electrode layer, so that the back electrode layer Surface atomic mobility improves；S2 forms absorbed layer by depositing operation on the back electrode layer.The technical issues of copper indium gallium selenide film layer is lower in Mo layer surface adhesive force in the prior art with solution, and the interface performance of copper indium gallium selenide film layer and molybdenum layer is caused to reduce.
Description
Technical field
The present invention relates to technical field of solar, in particular to a kind of raising photovoltaic cell back electrode and absorbed layer
The method and photovoltaic cell of adhesive force.
Background technique
In CIGS thin-film solar modular construction, thermal expansion coefficient, lattice constant match and contact are comprehensively considered
The factors such as resistance, Mo layer are commonly used as the deposition substrate of CIGS thin-film and the back electrode of component.Molybdenum layer is usually
It is obtained using the method for vacuum magnetic-control sputtering deposition plating, then carries out the preparation of copper indium gallium selenide film layer in Mo layer surface.
Core layer of the CuInGaSe absorbed layer as CIGS thin-film solar component, the interfacial property meeting with molybdenum layer
Entire thin film solar assembly property is had an impact.As one of the main stream approach of preparation high quality CIGS thin-film, altogether
Vapor deposition method is widely used in the research and production of CIGS thin-film solar component.Co-evaporated Deposition method is
Refer to and melt four kinds of copper, indium, gallium, selenium materials by resistance heating in the way of, under high vacuum environment, at an angle and away from
The substrate surface of descriscent heating is evaporated, and the particle of evaporation carries out deposition growing in Mo layer surface, forms CIGS thin-film.
Co-evaporated Deposition method has many advantages, such as that deposition rate is fast, reproducible and process control is strong.
But using Co-evaporated Deposition method, in Mo layer surface deposition growing CIGS thin-film.Since heating evaporation goes out
Copper, indium, gallium, the particle energy of selenium come be not high, so that copper indium gallium selenide film layer is that plane formula connects in the way of contact of Mo layer surface
Touching, adhesive force is not strong.This may will affect the interface performance of copper indium gallium selenide film layer and molybdenum layer, influence the CIGS thin-film sun
The subsequent technique and final assembly property of energy component production.
Summary of the invention
The purpose of the present invention is to provide a kind of methods for improving photovoltaic cell back electrode and absorbed layer adhesive force, can
Improve the adhesive force between back electrode layer surface and solar absorbing layer, with solve in the prior art copper indium gallium selenide film layer in molybdenum layer
The technical issues of surface adhesion force is lower, and the interface performance of copper indium gallium selenide film layer and molybdenum layer is caused to reduce.
The embodiment of the present invention is achieved in that
A method of improving photovoltaic cell back electrode and absorbed layer adhesive force, comprising the following steps:
S1 handles the surface of back electrode layer, so that the back electrode layer Surface atomic mobility improves；
S2 forms absorbed layer by depositing operation on the back electrode layer.
Further, in step sl, dry etching or wet etching are carried out to the surface of the back electrode layer.
Further, the dry etching includes the following steps:
Back electrode layer is placed in etching apparatus；
Gas is passed through in etching apparatus, gas generates plasma in etching apparatus；
The plasma carries out dry etching to back electrode layer surface.
Further, the gas is any one of hydrogen, argon gas, oxygen, carbon tetrafluoride, carbon tetrachloride；And/or
The flow of the gas is 10-100sccm, and the time of the dry etching is 1-2min.
Further, the wet etching includes the following steps:
Back electrode layer surface is rinsed with deionized water；
Back electrode layer surface is dried；
Back electrode layer surface is performed etching using hydrofluoric acid.
Further, the mass concentration of the hydrofluoric acid is 7%~9%.
Further, further comprising the steps of after step S1；
It is formed on the surface of back electrode layer fluted or raised.
Further, further comprising the steps of after step S1；
To there is the transition zone that can be used for absorbed layer deposition on the surface of back electrode layer by vacuum magnetic-control sputtering.
Further, the material of the transition zone is any one simple substance or copper, indium, gallium in silver, copper, indium, gallium and selenium
With in selenium at least two or more alloy or compound.
A kind of photovoltaic cell, the photovoltaic cell improve the side of photovoltaic cell back electrode Yu absorbed layer adhesive force from the above mentioned
Method is made.
A kind of method improving photovoltaic cell back electrode and absorbed layer adhesive force provided by the invention, comprising the following steps:
S1 handles the surface of back electrode layer, so that the back electrode layer Surface atomic mobility improves；S2, in the back electrode
On layer, absorbed layer is formed by depositing operation.Using above-mentioned scheme, the surface of back electrode layer is handled, so as to
The atom active for improving back electrode layer surface, in the surface deposit absorbent layer of back electrode layer, absorbed layer and back electrode layer surface
It is connected by the effect of chemical bonding, to enhance absorbed layer in the adhesive force on back electrode layer surface.To solve copper in the prior art
Indium gallium selenium film layer adhesive force between Mo layer surface is lower, the technology for causing the interface performance of copper indium gallium selenide film layer and molybdenum layer to reduce
Problem.
A kind of photovoltaic cell provided by the invention, the photovoltaic cell improve photovoltaic cell back electrode from the above mentioned and absorb
The method of layer adhesive force is made.Using above-mentioned scheme, photovoltaic cell includes back electrode layer and absorbed layer, and absorbed layer is attached to
The surface of back electrode layer, since by processing, absorbed layer is formed in back electricity by Co-evaporated Deposition method on the surface of back electrode layer
The surface of pole layer, absorbed layer can be made to be attached to, and the adhesive force on back electrode layer is stronger, so that the extinction effect of photovoltaic cell is more
It is good.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 is the process that the embodiment of the present invention obtains a kind of raising photovoltaic cell back electrode and the method for absorbed layer adhesive force
Figure.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.The present invention being usually described and illustrated herein in the accompanying drawings is implemented
The component of example can be arranged and be designed with a variety of different configurations.
Therefore, the detailed description of the embodiment of the present invention provided in the accompanying drawings is not intended to limit below claimed
The scope of the present invention, but be merely representative of selected embodiment of the invention.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without creative efforts belongs to the model that the present invention protects
It encloses.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, or be somebody's turn to do
Invention product using when the orientation or positional relationship usually put, be merely for convenience of description of the present invention and simplification of the description, without
It is that the device of indication or suggestion meaning or element must have a particular orientation, be constructed and operated in a specific orientation, therefore not
It can be interpreted as limitation of the present invention.In addition, term " first ", " second ", " third " etc. are only used for distinguishing description, and cannot manage
Solution is indication or suggestion relative importance.
In addition, the terms such as term "horizontal", "vertical", " pendency " are not offered as requiring component abswolute level or pendency, and
It is that can be slightly tilted.It is not to indicate the structure if "horizontal" only refers to that its direction is more horizontal with respect to for "vertical"
It has to fully horizontally, but can be slightly tilted.
In the description of the present invention, it is also necessary to which explanation is unless specifically defined or limited otherwise, term " setting ",
" installation ", " connected ", " connection " shall be understood in a broad sense, for example, it may be fixedly connected, may be a detachable connection or one
Connect to body；It can be mechanical connection, be also possible to be electrically connected；It can be directly connected, it can also be indirect by intermediary
It is connected, can be the connection inside two elements.For the ordinary skill in the art, on being understood with concrete condition
State the concrete meaning of term in the present invention.
With reference to the accompanying drawing, it elaborates to some embodiments of the present invention.In the absence of conflict, following
Feature in embodiment and embodiment can be combined with each other.
Fig. 1 is a kind of flow chart for the method for improving photovoltaic cell back electrode and absorbed layer adhesive force of the embodiment of the present invention.
As shown in Figure 1, a kind of method for improving photovoltaic cell back electrode and absorbed layer adhesive force provided by the invention, including following step
It is rapid:
S1 handles the surface of back electrode layer, so that the back electrode layer Surface atomic mobility improves.
In step sl, dry etching or wet etching are carried out to the surface of the back electrode layer.
Wherein, dry etching can be plasma etching.
The surface of back electrode layer is handled using the method for dry etching either wet etching, so that back electrode layer
Surface atom active improve.
Surface Creation metal molybdenum back electrode layer of the available radio frequencies magnetron sputtering in substrate.
Wherein, the dry etching includes the following steps:
Back electrode layer is placed in etching apparatus；Gas is passed through in etching apparatus, gas generates in etching apparatus
Plasma；The plasma carries out dry etching to back electrode layer surface.
Further, the gas is any one of hydrogen, argon gas, oxygen, carbon tetrafluoride, carbon tetrachloride；With or,
The flow of the gas is 10-100sccm, and the time of the dry etching is 1-2min.
Wherein, the flow of gas is preferably 30sccm, 50sccm or 70sccm.The time of dry etching be 1.25min,
1.5min or 1.75min.
Specifically, the flow of gas uses 10-100sccm, and the time is 1-2min, is used to ensure in hydrogen, argon in this way
Gas, oxygen, carbon tetrafluoride, it is any in carbon tetrachloride enter in etching apparatus, by etching apparatus be ionized into it is equal from
Daughter, for the plasma of formation when performing etching to back electrode layer surface, the depth of etching makes back electricity between 30-50nm
Pole layer surface forms the face of fluted injustice and the atom active on back electrode layer surface can be made to be improved, convenient for light-absorption layer
Attachment.
In addition, the wet etching includes the following steps:
Back electrode layer surface is rinsed with deionized water；
Back electrode layer surface is dried；
Back electrode layer surface is performed etching using hydrofluoric acid.
Further, the mass concentration of the hydrofluoric acid is 7%~9%.
Specifically, back electrode layer surface is performed etching using hydrofluoric acid, the time of etching is generally 1-3min, preferably
1.5min, 2min or 2.5min.It is used to ensure that the depth of back electrode layer etching is able to maintain between 30-50nm in this way, and hydrogen
The mass concentration of fluoric acid is 7%~9%, preferably 7.5%~8.6%, it can the depth for enabling back electrode layer 300 to etch
It is protected, also avoids the waste to material.
S2 forms absorbed layer by depositing operation on the back electrode layer.
In step s 2, the absorbed layer is formed by Co-evaporated Deposition method.It is completed in the surface treatment of back electrode layer
Later, absorbed layer is formed with by Co-evaporated Deposition method, at this point, the atom of absorbed layer can be with back electrode layer surface atom shape
At effective chemical bonding.
The material of the absorbed layer is copper indium gallium selenide.Since molybdenum has high-temperature oxidation resistance, long service life, and then carry on the back electricity
The material that pole uses is molybdenum；Since the film photoelectric conversion ratio of copper indium gallium selenide composition is higher, and then the material of absorbed layer is copper and indium
Gallium selenium.
In the present embodiment, in the surface deposit absorbent layer of back electrode layer, due to treated back electrode layer surface atom
Active raising, absorbed layer form effective chemical bonding when depositing to back electrode layer surface, with back electrode layer surface, to increase
Adhesive force of the strong absorbed layer on back electrode layer surface.It is specifically adhesive force between former back electrode layer and absorbed layer is 0.3-
0.8N/mm2, the adhesive force after improvement between back electrode layer and absorbed layer is 2.7-7.2N/mm2.To solve copper and indium in the prior art
Gallium selenium film layer adhesive force between Mo layer surface is lower, and the technology for causing the interface performance of copper indium gallium selenide film layer and molybdenum layer to reduce is asked
Topic.
It is further comprising the steps of after step S1；
It is formed on the surface of back electrode layer fluted or raised.
In the present embodiment, groove or protrusion on back electrode layer be it is multiple, multiple grooves or protrusion can uniform cloth
It sets on the surface of back electrode layer, it can also be in irregular formal distribution on the surface of back electrode layer, due to groove and protrusion
Setting, when back electrode layer surface is formed with absorbed layer, protrusion or groove on back electrode layer can be with absorbed layers close to back electrode
The side of layer is inlayed together, thus keep the contact between back electrode layer and absorbed layer inserted, such back electrode layer and suction
The adhesive force received between layer is stronger.
It is further comprising the steps of after step S1；
To there is the transition zone that can be used for absorbed layer deposition on the surface of back electrode layer by vacuum magnetic-control sputtering.
In the present embodiment, on the surface of back electrode layer, sputtering has transition zone, transition zone by way of vacuum magnetic-control sputtering
More preferably with the adhesion effect of absorbed layer, absorbed layer is being formed by Co-evaporated Deposition method in this way after transition zone formation, from
And the increased purpose of adhesive force between absorbed layer and back electrode layer can be reached.
On the basis of the above embodiments, further, the material of the transition zone is any in silver, copper, indium, gallium and selenium
More than one or copper, indium, gallium and any the two of selenium alloy or compound.
In the present embodiment, due to transition zone be Vacuum Magnetic sputter by way of deposit, Vacuum Magnetic sputtering particle energy compared with
Height can form with molybdenum back electrode layer and preferably contact and adhere to.In addition, transition zone can participate in subsequent copper as preformed layer
The process of the Co-evaporated Deposition synthesis of indium gallium selenium absorbed layer, therefore can be improved the ability that absorbed layer is attached to back electrode layer.
On the basis of the above embodiments, further, the back electrode layer with a thickness of 300-500nm.
In the present embodiment, using vacuum magnetic-control sputtering deposition plating method substrate surface deposit to be formed with a thickness of
The back electrode layer of 300-500nm.
The present invention provides a kind of photovoltaic module, and the photovoltaic module improves photovoltaic cell back electrode and absorbed layer from the above mentioned
It is prepared by the method for adhesive force.
Wherein, photovoltaic module includes back electrode layer and absorbed layer, and absorbed layer is attached to the surface of back electrode layer；In back electricity
Pole layer may be provided with groove close to the side of absorbed layer, in this way, being formed in back electrode by Co-evaporated Deposition method in absorbed layer
When the surface of layer, absorbed layer has part inlay into back electrode layer, and then absorbed layer is stable is attached on back electrode layer；
Side on back electrode layer close to absorbed layer is also provided with protrusion, in this way, passing through Co-evaporated Deposition method shape in absorbed layer
At at the surface of back electrode layer, absorbed layer has part inlay into back electrode layer, and then absorbed layer is stable is attached to
On back electrode layer.
In the present embodiment, since by processing, absorbed layer is formed in by Co-evaporated Deposition method on the surface of back electrode layer
The surface of back electrode layer, absorbed layer can be made to be attached to, and the adhesive force on back electrode layer is stronger, so that the extinction of photovoltaic module is imitated
Fruit is more preferably.
A kind of photovoltaic cell provided by the invention has a kind of photovoltaic module as described above.
Wherein, photovoltaic cell further includes substrate, buffer layer, Window layer and native oxide zinc layers, the setting of native oxide zinc layers
Between Window layer and buffer layer, and buffer layer is located between absorbed layer and Window layer, for inhaling low lattice mismatch and protection
Layer is received, while Window layer is located in native oxide zinc layers, as preceding electrode.When work, sunlight passes through Window layer, intrinsic zinc oxide
Layer, buffer layer, are absorbed by the absorption layer and generate photo-generated carrier.Under the action of built in field, photo-generated carrier is separated, and
It is transmitted by back electrode layer and Window layer.Hereby it is achieved that conversion of the solar energy to electric energy.
Buffer layer can be cadmium sulfide (CdS) buffer layer produced by immersion method, and native oxide zinc layers can be to pass through sputtering
The intrinsic zinc oxide resistive formation that method generates, Window layer can be the Al-Doped ZnO conductive layer generated by sputtering method.
Buffer layer is for slowing down that Lattice Matching between absorbed layer and Window layer is bad and the problem of influence cell output,
It can effectively stop Window layer during the preparation process to the damage of absorbed layer simultaneously, battery short circuit caused by can eliminating thus is existing
As.For the native oxide zinc layers of low-power sputtering there are two effect, an effect is to prevent Window layer from splashing when sputtering to buffer layer
Shoot evil wounded, another effect is that high-resistance native oxide zinc layers play the role of preventing battery drain.Window layer is for connecing
The carrier of take-up negative electrical charge, thus when preventing photovoltaic cell capable of generating power, because electrical leakage problems cause device performance to decline.
The material of substrate can be glass, flexible stainless steel or Kapton etc..When substrate selects glass, back electrode
Layer is grown on the surface of the substrate by vacuum magnetic-control sputtering deposition method；And blocking is provided between back electrode layer and glass
Layer, barrier layer prevents in substrate that Na is in the environment of high voltage to the good barrier property of Na ion, into back electrode layer,
Avoid the generation of potential induction attenuation phenomenon；Barrier layer is plated in substrate back, generally uses silicon nitride as barrier layer, to base
Plate surface forms a layer insulating, even if photovoltaic module uses in humid air for a long time, will not be formed in substrate surface
Conductive layer can not be formed into a loop with inside battery, avoid the generation of potential induction attenuation phenomenon.
In the present embodiment, photovoltaic cell has above-mentioned photovoltaic module, and the photo absorption performance of photovoltaic cell can be made stronger, with
Keep the generating effect of photovoltaic cell more preferable.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of method for improving photovoltaic cell back electrode and absorbed layer adhesive force, which comprises the following steps:
S1 handles the surface of back electrode layer, so that the back electrode layer Surface atomic mobility improves；
S2 forms absorbed layer by depositing operation on the back electrode layer.
2. improving the method for photovoltaic cell back electrode and absorbed layer adhesive force according to claim 1, which is characterized in that in step
In rapid S1, dry etching or wet etching are carried out to the surface of the back electrode layer.
3. improving the method for photovoltaic cell back electrode and absorbed layer adhesive force according to claim 2, which is characterized in that described
Dry etching includes the following steps:
Back electrode layer is placed in etching apparatus；
Gas is passed through in etching apparatus, gas generates plasma in etching apparatus；
The plasma carries out dry etching to back electrode layer surface.
4. improving the method for photovoltaic cell back electrode and absorbed layer adhesive force according to claim 3, which is characterized in that described
Gas is any one of hydrogen, argon gas, oxygen, carbon tetrafluoride, carbon tetrachloride；And/or
The flow of the gas is 10-100sccm, and the time of the dry etching is 1-2min.
5. improving the method for photovoltaic cell back electrode and absorbed layer adhesive force according to claim 2, which is characterized in that described
Wet etching includes the following steps:
Back electrode layer surface is rinsed with deionized water；
Back electrode layer surface is dried；
Back electrode layer surface is performed etching using hydrofluoric acid.
6. improving the method for photovoltaic cell back electrode and absorbed layer adhesive force according to claim 5, which is characterized in that described
The mass concentration of hydrofluoric acid is 7%~9%.
7. any one of -6 method for improving photovoltaic cell back electrode and absorbed layer adhesive force according to claim 1, feature
It is, it is further comprising the steps of after step S1；
Groove or protrusion are formed on the surface of back electrode layer.
8. any one of -6 method for improving photovoltaic cell back electrode and absorbed layer adhesive force according to claim 1, feature
It is, it is further comprising the steps of after step S1；
To there is the transition zone that can be used for absorbed layer deposition on the surface of back electrode layer by vacuum magnetic-control sputtering.
9. improving the method for photovoltaic cell back electrode and absorbed layer adhesive force according to claim 8, which is characterized in that described
The material of transition zone is in any one simple substance or copper, indium, gallium and selenium in silver, copper, indium, gallium and selenium at least two or more
Alloy or compound.
10. a kind of photovoltaic cell, which is characterized in that the photovoltaic cell is by any one of the claim 1-9 raising photovoltaic electric
The method of pond back electrode and absorbed layer adhesive force is made.
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