CN108550657A - A method of improving cadmium telluride solar cell properties - Google Patents
A method of improving cadmium telluride solar cell properties Download PDFInfo
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- CN108550657A CN108550657A CN201810509227.7A CN201810509227A CN108550657A CN 108550657 A CN108550657 A CN 108550657A CN 201810509227 A CN201810509227 A CN 201810509227A CN 108550657 A CN108550657 A CN 108550657A
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- solar cell
- cadmium telluride
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- microwave treatment
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000010949 copper Substances 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910004613 CdTe Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 16
- 238000002360 preparation method Methods 0.000 abstract description 13
- 238000005516 engineering process Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 7
- 230000006872 improvement Effects 0.000 abstract description 4
- 238000009826 distribution Methods 0.000 abstract description 3
- 239000000446 fuel Substances 0.000 abstract description 3
- 230000005352 galvanomagnetic phenomena Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 16
- 239000010409 thin film Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 15
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 14
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910052793 cadmium Inorganic materials 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000011056 performance test Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 238000005092 sublimation method Methods 0.000 description 4
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 4
- 238000002061 vacuum sublimation Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of methods improving cadmium telluride solar cell properties, and the cadmium telluride solar cell for eliminating outer layer metal encapsulating structure is carried out microwave treatment.Microwave technology is introduced into preparation and the performance improvement field of solar cell by the present invention, go deep into device inside using the penetrability of microwave, change concentration and the distribution of material internal point defect by its distinctive fuel factor and galvanomagnetic-effect, and then the carrier concentration in controlled material, finally play the effect of regulation and control battery performance.
Description
Technical field
The invention belongs to technical field of solar batteries, and in particular to a kind of side for improving cadmium telluride solar cell properties
Method.
Background technology
Cadmium telluride (CdTe) is a kind of II-VI group direct band-gap semicondictor that energy gap is 1.45eV, the suction of film
It receives coefficient and is up to 105cm-1.Based on these characteristics, cadmium telluride becomes the photovoltaic material of great application prospect, receives significant attention.
Currently, the laboratory highest transfer efficiency of CdTe thin film solar cell has reached 22.1%, component efficiency is also up to
18.6%.But with its theoretically 31% photoelectric conversion efficiency still have larger gap, this be significantly limited by open circuit electricity
Press (Voc) promotion.
In principle, there are following several approach that can improve the open-circuit voltage of cadmium telluride diaphragm solar battery：One, tellurium is improved
Cadmium material p-type doping concentration.Element substitution Cd, I race or group Ⅴ element in the periodic table of elements is presently mainly utilized to substitute Te
Position is to realize that the elements such as acceptor doping, such as common Li, Na, Cu, N, P carry out p-type doping.But due to CdTe material sheet
Intrinsic strong " self compensation " effect of body so that doping is difficult to carry out or effect unobvious.Two, minority carrier life time is improved.CdTe thin film
Middle minority carrier life time generally in 1ns or so, can improve minority carrier life time by improving grain size or reducing the modes such as boundary defect.
However, also having, the promotion effect that document report only improves minority carrier life time open-circuit voltage is limited, and is more than the minority carrier life time of 10ns
To the no remarkable effect of the raising of battery performance.Three, optimize back-contact electrode.Common cupric back contacts, transition metal oxide
Buffer layer or narrow band gap heavily doped layer obtain good Ohmic contact at back electrode.But p-type CdTe is up to the work(of 5.7eV
Function is still to obtain a major challenge that is suitable and stablizing back contacts.In addition, the method for above-mentioned raising open-circuit voltage is in device
Implement in preparation process, which increase the complexity of production technology, while also increasing the time consuming nature of production cycle.
Invention content
In view of this, the technical problem to be solved in the present invention is to provide a kind of cadmium telluride solar cell properties that improve
Method, method provided by the invention can regulate and control the microdefect state in cadmium telluride solar cell material, and it is thin to improve cadmium telluride
The open-circuit voltage of film solar cell, and then promote the overall performance of device.
The present invention provides a kind of methods improving cadmium telluride solar cell properties, will eliminate outer layer metal encapsulation knot
The cadmium telluride solar cell of structure carries out microwave treatment.
Referring to Fig. 1, Fig. 1 is the schematic diagram of the method provided by the invention for improving cadmium telluride solar cell properties.Fig. 1
In, 1- microwave launchers；2- protects cavity；3- photovoltaic devices (cadmium telluride solar cell)；4- substrate discs；5- microwaves control
System；6- microwaves.
Specifically, prepare sample first, i.e. cadmium telluride solar cell.In the present invention, cadmium telluride solar cell can
To be the sample of laboratory preparation or commercially available cadmium telluride solar cell device as microwave treatment.Before microwave treatment, remove
Go the Metal Packaging structure of sample exterior.
Wherein, the cadmium telluride solar cell of the present invention for eliminating outer layer metal encapsulating structure includes：
TCO electro-conductive glass；
It is compound in the Window layer of the TCO electro-conductive glass；
It is compound in the CdTe absorbed layers of the Window layer；
It is compound in the back contact and back electrode of the CdTe absorbed layers.
Wherein, the back contact is layers of copper, and the back electrode is metal electrode.
In certain specific embodiments of the invention, the cadmium telluride solar energy for eliminating outer layer metal encapsulating structure
Battery is FTO/CdS/CdTe/Cu:The photovoltaic device of Metal structures；
In other specific implementation modes of the present invention, the cadmium telluride sun for eliminating outer layer metal encapsulating structure
Energy battery is FTO/MZO/CdSe/CdTe/Cu:The photovoltaic device of Metal structures；Wherein, MZO MgZnO；
In other specific implementation modes of the present invention, the cadmium telluride sun for eliminating outer layer metal encapsulating structure
Energy battery is FTO/SnO2/CdS/CdTe/Cu:The photovoltaic device of Metal structures；
In other specific implementation modes of the present invention, the cadmium telluride sun for eliminating outer layer metal encapsulating structure
Energy battery is FTO/MZO/CdTe/Cu:The photovoltaic device of Metal structures.
Then, the cadmium telluride solar cell for eliminating outer layer metal encapsulating structure is subjected to microwave treatment.That is, will removal
The cadmium telluride solar cell of outer layer metal encapsulating structure is placed in microwave field, and the frequency of the microwave treatment is 0.3~
30GHz, preferably 2450 ± 50MHz；Power is 50~450W, preferably 240~380W；Time is 5~60min, preferably
15~30min.The method carries out under room temperature, standard atmosphere condition, and in the present invention, it is 25 ± 5 to define the room temperature
℃.Microwave is one kind of electromagnetic wave, its wave-length coverage is 1m~1mm, respective frequencies ranging from 300MHz~300GHz.Its
The application technology in the fields such as military, communication and the energy is quite ripe, but microwave technology is rarely applied to photovoltaic device system
The standby case with optimization processing.
The microwave feeds that the present invention utilizes include but is not limited to microwave oven for laboratory.
Finally, the device after microwave treatment is carried out natural cooling in air to cool down, completes encapsulation when necessary.
Compared with prior art, it the present invention provides a kind of method improving cadmium telluride solar cell properties, will remove
The cadmium telluride solar cell of outer layer metal encapsulating structure carries out microwave treatment.Microwave technology is introduced into solar energy by the present invention
The preparation of battery and performance improvement field, go deep into device inside using the penetrability of microwave, pass through its distinctive fuel factor and electricity
Magnetic effect changes concentration and the distribution of material internal point defect, and then the carrier concentration in controlled material, finally plays regulation and control
The effect of battery performance.
The present invention has the advantages that following：
1. the microwave handling method utilizes the fuel factor and galvanomagnetic-effect check point defect and impurity ion distribution of microwave, from
Material level improves the overall performance of battery, and effect is extremely apparent.As shown in Fig. 2, output characteristics variation is bright before and after microwave treatment
It is aobvious.
2. the microwave handling method can effectively improve the p-type doping concentration of cadmium telluride.Microwave assisted back contact
Copper ion spreads and is migrated into CdTe thin film, is further formed effective acceptor-type defect, as copper substitutes between cadmium site defect, copper
Gap and cadmium vacancy complex defect etc., to improve doping concentration.As shown in figure 3, the carrier concentration in battery obsorbing layer improves
One magnitude.Along with the promotion of open-circuit voltage, higher carrier concentration also declines the resistivity of material, these also can
Promote battery fill factor (fill factor) to be promoted, and then promotes the transfer efficiency of cadmium telluride solar cell.
3. the microwave handling method is simple for process, feasibility is higher.In the scope of electromagnetic wave, the application of microwave is most living
Jump, most extensive, most ripe one of part.The method of microwave treatment cadmium telluride solar cell can borrow existing microwave skill
Art.Processing procedure only needs to carry out device the microwave radiation of appropriate power, appropriate time, and process complexity is low.Often compared to other
The mode for the raising open-circuit voltage seen, such as optimizes back-contact electrode, increases minority carrier density and service life etc., the present invention greatly reduces
The cost of complexity, process cycle that technology is realized taken with material, is suitble to large-scale industrial production and manufacture.
4. microwave used in the microwave handling method is a kind of special electromagnetic wave, battery structure can not damaged
On the basis of go deep into device inside, with material interact.Microwave treatment is as a kind of processing side carried out after the completion of device
Method reduces external environment to core semiconductor compared with other series of optimum carried out in cell manufacturing process techniques
The pollution of material improves the performance and stability of device.
Description of the drawings
Fig. 1 is the schematic diagram provided by the invention for improving cadmium telluride solar cell properties method；
Fig. 2 is the cadmium telluride diaphragm solar battery before and after microwave treatment, under solar cell standard test condition
(1000W/m2, 25 DEG C, AM1.5) and current-voltage (I-V) curve graph for measuring；
Fig. 3 is doping concentration-width of depletion region (N (X)-X of cadmium telluride diaphragm solar battery before and after microwave treatmentD) bent
Line chart.
Specific implementation mode
For a further understanding of the present invention, with reference to embodiment to raising cadmium telluride solar cell provided by the invention
The method of performance illustrates, and protection scope of the present invention is not limited by the following examples.
Embodiment 1：
The preparation of cadmium telluride solar cell.Prepare FTO/CdS/CdTe/Cu:The photovoltaic device of Metal structures, technique
For：Cadmium sulfide is prepared using chemical bath method or magnetron sputtering method on fluorine-doped tin dioxide (FTO) electro-conductive glass of business
(CdS) film, film thickness 100nm；Cadimium telluride thin film, 4 μm of thickness are prepared using close spaced sublimation method (CSS)；It is thin to CdTe
Film carries out caddy (CdCl2) phosphorus salpeter solution etching is carried out after heat treatment；It is thick that about 5nm is successively prepared using Vacuum sublimation
Copper thin film and about 200nm thickness metal electrode.After plated film, the vacuum annealing process of 25min at 200 DEG C is carried out to sample.It is complete
At device preparation technology.
The battery prepared with microwave treatment.Above-mentioned battery sample is placed in ceramics or glass container, is turned together with container
It moves on in the dedicated micro-wave oven in laboratory.Setting microwave power is 380W；Processing time is 15min；Microwave used in the process
Frequency is 2450 ± 50MHz；Microwave furnace inner environment is room temperature, standard atmosphere condition.After the completion of waiting for microwave treatment program, take out
Battery sample is placed in air and waits for natural cooling, completes treatment process of the microwave to cadmium telluride diaphragm solar battery.
The performance of solar cell before and after microwave treatment is tested, the results are shown in Table 1
The performance test results one of solar cell before and after 1 microwave treatment of table
Table 1 lists specific performance parameter, and the open-circuit voltage of battery is increased to 811mV from 758mV, fill factor from
70.3% is increased to 72.1%, and photoelectric conversion efficiency is increased to 14.6% by 13.4%, and performance has a distinct increment.
The output performance of solar cell before and after microwave treatment is tested, as a result sees Fig. 2, Fig. 2 is before microwave treatment
The cadmium telluride diaphragm solar battery afterwards, (1000W/m under solar cell standard test condition2, 25 DEG C, AM1.5) and it measures
Current-voltage (I-V) curve graph.As shown in Figure 2, battery performance is obviously improved before and after microwave treatment, especially open-circuit voltage
Raising.
Doping concentration-width of depletion region of solar cell before and after microwave treatment is tested, as a result sees that Fig. 3, Fig. 3 are
Doping concentration-width of depletion region (N (X)-X of cadmium telluride diaphragm solar battery before and after microwave treatmentD) curve graph.Such as Fig. 3 institutes
Show, the carrier concentration in battery obsorbing layer improves a magnitude, for having the cadmium telluride material of strong " self compensation " effect
It is an important breakthrough for material.Along with the promotion of open-circuit voltage, higher carrier concentration also declines the resistivity of material,
And then battery fill factor is promoted to improve, promote the transfer efficiency of cadmium telluride cells.
Embodiment 2：
The preparation of cadmium telluride solar cell.Prepare FTO/MZO/CdSe/CdTe/Cu:The photovoltaic device of Metal structures,
Technique is：The zinc oxide (MZO) for mixing magnesium is prepared using magnetron sputtering method on fluorine-doped tin dioxide (FTO) electro-conductive glass of business
Film, film thickness 20nm；Cadmium selenide (CdSe) film, thickness 80nm are prepared using magnetron sputtering method；Using close spaced sublimation
Method (CSS) prepares Cadimium telluride thin film, 4 μm of thickness；Caddy (CdCl is carried out to CdTe thin film2) that bromine methanol is carried out after heat treatment is molten
Liquid etches；The metal electrode of the Copper thin film and about 200nm thickness of about 5nm thickness is successively prepared using Vacuum sublimation.It is right after plated film
Sample carries out the vacuum annealing process of 25min at 200 DEG C.Complete device preparation technology.
With the battery of the above-mentioned preparation of microwave treatment, battery sample is placed in ceramics or glass container, is turned together with container
It moves on in the dedicated micro-wave oven in laboratory.Setting microwave power is 240W；Processing time is 30min；Microwave used in the process
Frequency is 2450 ± 50MHz；Microwave furnace inner environment is room temperature, standard atmosphere condition.After the completion of waiting for microwave treatment, battery is taken out
Sample is placed in air and waits for natural cooling, completes treatment process of the microwave to cadmium telluride diaphragm solar battery.
The performance of solar cell before and after microwave treatment is tested, the results are shown in Table 2
The performance test results two of solar cell before and after 2 microwave treatment of table
Embodiment 3：
The preparation of cadmium telluride solar cell.Prepare FTO/SnO2/CdS/CdTe/Cu:The photovoltaic device of Metal structures,
Technique is：Stannic oxide (SnO is prepared using magnetron sputtering method on fluorine-doped tin dioxide (FTO) electro-conductive glass of business2) thin
Film, film thickness 20nm；Cadmium sulfide (CdS) film, film thickness 80nm are prepared using chemical bath method or magnetron sputtering method；It adopts
Cadimium telluride thin film, 4 μm of thickness are prepared with close spaced sublimation method (CSS)；Caddy (CdCl is carried out to CdTe thin film2) after heat treatment
Carry out phosphorus salpeter solution etching；The Copper thin film of about 5nm thickness and the metal electricity of about 200nm thickness are successively prepared using Vacuum sublimation
Pole.After plated film, the vacuum annealing process of 25min at 200 DEG C is carried out to sample.Complete device preparation technology.
Above-mentioned battery sample is placed in ceramics or glass container by the battery prepared with microwave treatment, is turned together with container
It moves on in the dedicated micro-wave oven in laboratory.Setting microwave power is 50W；Processing time is 60min；Microwave Frequency used in the process
Rate is 2450 ± 50MHz；Microwave furnace inner environment is room temperature, standard atmosphere condition.After the completion of waiting for microwave treatment, battery sample is taken out
Product are placed in air and wait for natural cooling, complete treatment process of the microwave to cadmium telluride diaphragm solar battery.
The performance of solar cell before and after microwave treatment is tested, the results are shown in Table 3
The performance test results three of solar cell before and after 3 microwave treatment of table
Embodiment 4：
The preparation of cadmium telluride solar cell.Prepare FTO/MZO/CdTe/Cu:The photovoltaic device of Metal structures, technique
For：The zinc oxide (MZO) for mixing magnesium using magnetron sputtering method preparation on fluorine-doped tin dioxide (FTO) electro-conductive glass of business is thin
Film, film thickness 100nm；Cadimium telluride thin film, 4 μm of thickness are prepared using close spaced sublimation method (CSS)；Chlorine is carried out to CdTe thin film
Cadmium (CdCl2) phosphorus salpeter solution etching is carried out after heat treatment；The Copper thin film of about 5nm thickness is successively prepared using Vacuum sublimation
The metal electrode of about 200nm thickness.After plated film, the vacuum annealing process of 25min at 200 DEG C is carried out to sample.The device system of completion
Standby technique.
Above-mentioned battery sample is placed in ceramics or glass container by the battery prepared with microwave treatment, is turned together with container
It moves on in the dedicated micro-wave oven in laboratory.Setting microwave power is 450W；Processing time is 5min；Microwave Frequency used in the process
Rate is 2450 ± 50MHz；Microwave furnace inner environment is room temperature, standard atmosphere condition.After the completion of waiting for microwave treatment, battery sample is taken out
Product are placed in air and wait for natural cooling, complete treatment process of the microwave to cadmium telluride diaphragm solar battery.
The performance of solar cell before and after microwave treatment is tested, the results are shown in Table 4
The performance test results four of solar cell before and after 4 microwave treatment of table
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (7)
1. a kind of method improving cadmium telluride solar cell properties, which is characterized in that outer layer metal encapsulating structure will be eliminated
Cadmium telluride solar cell carry out microwave treatment.
2. according to the method described in claim 1, it is characterized in that, the frequency of the microwave treatment is 0.3~30GHz；Power
For 50~450W；Time is 5~60min.
3. according to the method described in claim 1, it is characterized in that, the frequency of the microwave treatment is 2450 ± 50MHz；Power
For 240~380W；Time is 15~30min.
Further include cooling 4. according to the method described in claim 1, it is characterized in that, after carrying out microwave treatment, it is described cold
But cooling is to cool under natural conditions.
5. according to the method described in claim 1, it is characterized in that, the cadmium telluride for eliminating outer layer metal encapsulating structure too
It is positive can battery include：
TCO electro-conductive glass；
It is compound in the Window layer of the TCO electro-conductive glass；
It is compound in the CdTe absorbed layers of the Window layer；
It is compound in the back contact and back electrode of the CdTe absorbed layers.
6. according to the method described in claim 1, it is characterized in that, the back contact is layers of copper, the back electrode is metal
Electrode.
7. according to the method described in claim 1, it is characterized in that, the method carries out under room temperature, standard atmosphere condition,
The room temperature is 25 ± 5 DEG C.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786481A (en) * | 2019-01-10 | 2019-05-21 | 成都中建材光电材料有限公司 | A kind of CdTe thin film solar cell module and preparation method thereof |
| WO2021047673A1 (en) * | 2019-09-12 | 2021-03-18 | 中国建材国际工程集团有限公司 | Cadmium telluride solar cell and preparation method thereof |
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| CN103165743A (en) * | 2011-12-15 | 2013-06-19 | 广东先导稀材股份有限公司 | Preparation method for halogen mixed with cadmium telluride, thin film solar cell of halogen mixed with cadmium telluride and preparation method thereof |
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| WO2021047673A1 (en) * | 2019-09-12 | 2021-03-18 | 中国建材国际工程集团有限公司 | Cadmium telluride solar cell and preparation method thereof |
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