CN105244414A - Molybdenum disulfide / silicon heterojunction solar energy cell and preparation method thereof - Google Patents
Molybdenum disulfide / silicon heterojunction solar energy cell and preparation method thereof Download PDFInfo
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- CN105244414A CN105244414A CN201510678656.3A CN201510678656A CN105244414A CN 105244414 A CN105244414 A CN 105244414A CN 201510678656 A CN201510678656 A CN 201510678656A CN 105244414 A CN105244414 A CN 105244414A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 93
- 239000010703 silicon Substances 0.000 title claims abstract description 93
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 title abstract 5
- 229910052982 molybdenum disulfide Inorganic materials 0.000 title abstract 5
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000004544 sputter deposition Methods 0.000 claims description 31
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 238000000137 annealing Methods 0.000 claims description 21
- 239000010453 quartz Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000010408 film Substances 0.000 claims description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims description 12
- 239000011733 molybdenum Substances 0.000 claims description 12
- 239000003708 ampul Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 239000000243 solution Substances 0.000 claims description 7
- 238000002207 thermal evaporation Methods 0.000 claims description 7
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 6
- 239000005864 Sulphur Substances 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000356 contaminant Substances 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 17
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a molybdenum disulfide / silicon heterojunction solar energy cell and a preparation method thereof. The chemical vapor deposition method can be used in preparing uniform molybdenum disulfide film with large-area and high crystallinity degree. The molybdenum disulfide film has a relatively high carrier mobility and an adjustable band gap. The prepared molybdenum disulfide / silicon heterojunction solar energy cell has characteristics of normal temperature preparation, simple process, low cost and high photoelectric conversion efficiency, and can perform effective conversion of solar energy even when the cell cost is reduced.
Description
Technical field
The invention belongs to microelectronics and photoelectron technical field, be specifically related to a kind of molybdenum bisuphide/silicon heterogenous solar cell and preparation method thereof.
Background technology
Along with the development of modern industry, global energy crisis and atmosphere polluting problem are on the rise, and solar energy receives the attention of many countries as desirable regenerative resource.Due to the minimizing of non-renewable energy resources and the dual-pressure of environmental pollution, make photovoltaic industry fast development, the development of solar cell is also maked rapid progress.Exploitation solar cell two key issues are exactly: improve conversion efficiency and reduce costs.
At present, silicon is the most frequently used solar cell material, and the conversion efficiency of solar cell prepared by this material is high, and technology is relative maturity also.For current silicon system solar cell, the nearly theoretical limit of its efficiency, it is very difficult for wanting improving conversion efficiency further; Although silicon system solar cell develops the most ripe in solar cells, because cost remains high, far can not meet the requirement of large-scale promotion application, therefore, the development of solar energy be unable to do without selection to semi-conducting material and improvement.
Molybdenum bisuphide (MoS
2) be a kind of natural minerals of rich reserves, cheap, there is good thermal stability and chemical stability; There is wide band gap and the adjustable feature such as physical property, higher carrier mobility of band gap at visible-range, find through inventor's research and test, MoS prepared by this material and silicon (Si)
2/ Si heterojunction solar cell has excellent photovoltaic effect, and has the features such as prepared by normal temperature, technique is simple, while reduction device cost, effectively can absorb conversion sunlight, therefore, be expected to obtain high efficiency novel solar battery, MoS
2/ Si heterojunction also becomes one of preferred material of high-efficiency and low-cost solar cell, thus makes MoS
2/ Si heterojunction solar battery has a good application prospect, but in prior art, the not embody rule example of above-mentioned technology.
Summary of the invention
Problem solved by the invention is to provide a kind of MoS
2/ Si heterojunction solar battery and preparation method thereof, realizes effective conversion of solar energy.
A kind of MoS
2the preparation method of/Si heterojunction solar battery, comprises the following steps:
(1) adopt acetone soln to carry out ultrasonic cleaning to monocrystalline silicon piece, remove organic dirt of silicon chip surface, and adopt alcohol to carry out to described silicon chip the acetone that described silicon chip surface is removed in ultrasonic cleaning, deionized water rinsing 3 times;
(2) adopt buffered etch liquid BOE to clean above-mentioned silicon chip, remove surface oxide layer, then rinse in deionized water, dry up with nitrogen, the monocrystalline silicon piece after cleaning is denoted as silicon chip A;
(3) 1.1 ~ 2 are adopted
wt% naOH and 1 ~ 3
vol% texturing is carried out in mixed solution corrosion of silicon A15 ~ 26 minute under 70 ~ 90 ° of C conditions of IPA, and surface forms inverted pyramid shape structure, and above-mentioned silicon chip is denoted as silicon chip B;
(4) NH is passed in a pecvd system
3, use NH
3plasma bombardment silicon chip B surface, realizes passivation to silicon chip B surface, reduces interfacial state, NH
3flow control is 20 ~ 30
sccm , pressure in vacuum tank remains on 0.5 ~ 1.2Pa;
(5) SiH is passed in a pecvd system
4, flow control is at 30 ~ 60sccm, and pressure in vacuum tank remains on 80 ~ 100Pa.Time 2 ~ 4min, power 80 ~ 150W, form the silicon chip C with intrinsic amorphous silicon film;
(6) by silicon chip
c be placed in magnetic control sputtering system, forvacuum is to 3.5 × 10
-4pa ~ 4.5 × 10
-4pa, passes into high-purity working gas Ar(purity and is greater than 99.9%), flow control is at 20 ~ 40sccm, and pressure in vacuum tank remains on 0.5 ~ 1.5Pa;
(7) use Ar plasma pre-sputtering metal molybdenum target Mo to remove surface contaminant, the pre-sputtering time is 10 ~ 15min, underlayer temperature room temperature;
(8) sputter on Mo to silicon chip C, sputtering power is 150 ~ 250W, sputtering time 2 ~ 5min, and the silicon chip C being attached with described metal M o is called silicon chip D;
(9) quartz boat filling 1 ~ 3g sulphur powder is placed in heating furnace quartz ampoule ventilating opening low-temperature space, temperature 100 ~ 130 DEG C, silicon chip D is placed in stove central authorities, protective gas Ar10 ~ 15min is filled with emptying air to quartz ampoule, then heated quarty tube to 500 DEG C ~ 600 DEG C, wherein Ar throughput is 150 ~ 220sccm;
(10) keep above-mentioned Ar throughput constant, with slow heated quarty tube to 750 ~ 900 DEG C of 3 DEG C/min, after constant temperature 10 ~ 20min, be cooled to room temperature;
(11) remove the quartz boat that sulphur powder is housed, make silicon chip D carry out annealing in process in Ar atmosphere is enclosed, annealing temperature 950 ~ 1100 DEG C, annealing time is 0.5 ~ 1h, and the silicon chip after process is denoted as silicon chip E;
(12) at the reverse side thermal evaporation metallic aluminium of silicon chip E as back electrode, and at H
2annealing in process under atmosphere, annealing temperature is 450 DEG C ± 20 DEG C, and the annealing in process time is 25 ~ 35min; Silicon chip with Al electrode is denoted as silicon chip;
(13) silicon chip
fmoS is contained in front
2, it adopts electron beam evaporation prepare the titanium film that thickness is 5 ~ 15nm, then the gold thin film preparing 100 ~ 300nm thereon forms top electrode, forms heterojunction solar battery.
Wherein, monocrystalline silicon piece described above is p-type monocrystalline silicon piece, thickness 200 microns ~ 300 microns, resistivity 0.2 Ω ㎝ ~ 1.0 Ω ㎝.
Wherein, in step (2), BOE liquid is the NH of volume ratio 6:1
4f and HF mixed solution; Wherein the concentration of ammonium fluoride solution is 35wt% ~ 45wt%, and hydrofluoric acid solution concentration is 45wt% ~ 55wt%.
Wherein, in step (7), the purity of metal M o target is 99.99%, with substrate parallel interval 10 ~ 15cm.
Further, the invention provides a kind of heterojunction solar battery adopting above-mentioned preparation method to obtain, it is characterized in that, each layer of described battery is followed successively by Al back electrode, p-type monocrystalline silicon, intrinsic amorphous silicon film, MoS from the bottom up
2thin layer, Ti, Au.
Wherein said metal A l back electrode thickness is 100 ~ 300 nanometers; P-type monocrystalline silicon piece thickness is 150 microns ~ 300 microns; Intrinsic amorphous silicon film thickness 2 ~ 8 nanometer; MoS
2thickness of thin layer is 10 ~ 30 nanometers; Ti metal layer thickness is 5 ~ 15 nanometers; Au metal layer thickness is 100 ~ 300 nanometers.
Preparation method provided by the invention can obtain large area, evenly, high crystalline can MoS
2layer, forms heterostructure with p-type monocrystalline silicon, is applied to heterojunction solar cell preparation, effectively can realizes opto-electronic conversion.The method is simple, and cost is low, and controllability is strong, has a good application prospect.
Accompanying drawing explanation
Fig. 1 MoS
2/ Si heterojunction solar battery structural representation;
Fig. 2 MoS
2/ Si heterojunction solar battery process chart;
In figure: 1, metal A u layer, 2, metal Ti layer, 3, MoS
2film, 4, intrinsic amorphous silicon film, 5, p-type monocrystalline silicon, 6, Al back electrode.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The invention provides a kind of MoS
2/ Si heterojunction solar battery preparation method, chemical vapor deposition (CVD) method can obtain large area, even, high crystalline quality thin layer MoS
2, this material has higher carrier mobility, and band gap controllable, the MoS of preparation
2/ Si heterojunction solar cell has normal temperature preparation, technique is simple, cost is low, photoelectric conversion efficiency high, while reduction device cost, can realize effective conversion of solar energy.
Fig. 1 is the MoS that the embodiment of the present invention provides
2/ Si heterojunction solar battery structural representation.The present invention adopts chemical vapor deposition (CVD) to prepare MoS
2film, forms heterostructure with p-type monocrystalline silicon, and with conventional crystal silion cell unlike not having High temperature diffusion doping process, battery preparation technique is simple, effectively can realize opto-electronic conversion.
Battery structure as shown in Figure 1, is followed successively by Al back electrode 6, p-type monocrystalline silicon thin film 5, intrinsic amorphous silicon film 4, MoS from the bottom up
2thin layer 3, Ti metal level 2 and Au metal level 1; Described metal A l back electrode 5 thickness is 100 ~ 300 nanometers; P-type monocrystalline silicon 5 thickness is 150 microns ~ 300 microns; Intrinsic amorphous silicon film thickness 2 ~ 8 nanometer; MoS
2thin layer 3 thickness is 10 ~ 30 nanometers; Ti metal level 2 thickness is 5 ~ 15 nanometers; Au metal level 1 thickness is 100 ~ 300 nanometers.
MoS of the present invention
2 /the preparation method of Si heterojunction solar battery, comprises the following steps:
(1) organic dirt of silicon chip surface is removed after adopting acetone soln to carry out ultrasonic cleaning to monocrystalline silicon piece, and adopt alcohol to carry out to described silicon chip the acetone that described silicon chip surface is removed in ultrasonic cleaning, with deionized water rinsing 3 times, wherein monocrystalline silicon piece thickness 150 microns ~ 300 microns, resistivity 0.2 Ω ㎝ ~ 1.0 Ω ㎝;
(2) NH is adopted
4f, HF mixed liquor cleans above-mentioned silicon chip at normal temperatures, removes surface oxide layer, then rinses in deionized water.Wherein the concentration of ammonium fluoride solution is 35wt% ~ 45wt%, and hydrofluoric acid solution concentration is 45wt% ~ 55wt%, and the monocrystalline silicon piece after cleaning is denoted as monocrystalline silicon piece A;
(3) adopt the mixed solution of 1.1 ~ 2wt%NaOH and 1 ~ 3vol%IPA under 70 ~ 90 ° of C conditions, corrode P-type silicon sheet A15 ~ 26min, texturing rear surface becomes the monocrystalline silicon piece of inverted pyramid shape structure to be denoted as silicon chip B;
(4) NH is passed in a pecvd system
3, use NH
3plasma bombardment B surface, thus passivation B is surperficial, flow control is at 20 ~ 30sccm, and pressure in vacuum tank remains on 0.5 ~ 1.2Pa;
Monocrystalline silicon piece in above-mentioned technique after acetone, ethanol purge when buffered etch liquid cleans, the natural oxidizing layer (SiO of silicon chip surface
2) corroded by hydrofluoric acid, namely HF is as main etching solution, NH
4f then uses as buffer, utilizes NH
4f control H
+concentration, slowing down corrosion speed, makes stable reaction at the uniform velocity carry out; Under low vacuum environment, adopt the dangling bonds of N, H ion passivation monocrystalline silicon surface, reduce interface state density;
(5) SiH is passed in a pecvd system
4, flow control is at 30 ~ 60sccm, and pressure in vacuum tank remains on 80 ~ 100Pa, time 2 ~ 4min, power 80 ~ 150W, forms the silicon chip C with intrinsic amorphous silicon film;
(6) C is placed in magnetic control sputtering system, forvacuum is to 3.5 × 10
-4pa ~ 4.5 × 10
-4pa, passes into high-purity working gas Ar(99.99%), flow control is at 20 ~ 40sccm, and pressure in vacuum tank remains on 0.5 ~ 1.5Pa;
(7) use Ar plasma pre-sputtering Mo target to remove surface contaminant, the pre-sputtering time is 10 ~ 15min, underlayer temperature room temperature;
(8) sputter on Mo to silicon chip C, sputtering power is 150 ~ 250W, sputtering time 2 ~ 5min, and the silicon chip C being attached with described metal M o is called silicon chip D;
(9) quartz boat filling sulphur powder (1 ~ 3g) is placed in heating furnace quartz ampoule ventilating opening low-temperature space, temperature 100 ~ 130 DEG C, silicon chip D is placed in stove central authorities, protective gas Ar10 ~ 15min is filled with emptying air to quartz ampoule, then heated quarty tube to 500 DEG C ~ 600 DEG C, wherein Ar throughput is 150 ~ 220sccm;
(10) keep above-mentioned Ar throughput constant, with slow heated quarty tube to 750 ~ 900 DEG C of 3 DEG C/min, after constant temperature 10 ~ 20min, be cooled to room temperature;
(11) remove the quartz boat that sulphur powder is housed, above-mentioned silicon chip is enclosed annealing in process in Ar atmosphere, annealing temperature 950 ~ 1100 DEG C, annealing time is 0.5 ~ 1h.Silicon chip after process is denoted as silicon chip E;
(12) at the reverse side thermal evaporation metallic aluminium back electrode of above-mentioned silicon chip, and at H
2anneal under atmosphere, annealing temperature is 450 DEG C ± 20 DEG C, and the annealing in process time is 25 ~ 35min; Silicon chip with Al electrode is denoted as silicon chip F;
(13) MoS is contained in F front
2, it adopts electron beam evaporation prepare the titanium film that thickness is 5 ~ 15nm, then the gold thin film preparing 100 ~ 300nm thereon forms top electrode, forms heterojunction solar battery.
Now further describe MoS provided by the invention by instantiation
2/ Si heterojunction solar battery technology of preparing:
Example 1:
(1) basic corrosion and the cleaning of monocrystalline silicon piece is completed by such scheme, wherein silicon wafer thickness 150 μm, resistivity 0.2 Ω cm;
(2) SiH is passed in a pecvd system
4, flow 30sccm, pressure 80Pa, time 2min, power 80W;
(3) magnetic control sputtering system forvacuum 3.5 × 10
-4pa, passes into high-purity Ar with 20sccm, and pressure in vacuum tank keeps 0.5Pa;
(4), after pre-sputtering, sputtering target material Mo with on the silicon chip of thin amorphous silicon layer, regulates sputtering power 150W, sputtering time 2min to above-mentioned;
(5) when S and metal M o reacts, quartz ampoule is slowly heated to 750 DEG C, cools after constant temperature 10min;
(6) the obtained MoS of reaction
2at 950 DEG C of annealing 0.5h;
(7) MoS is had on upper strata
2silicon chip back side thermal evaporation Al electrode, thickness is 100nm;
(8) at above-mentioned MoS
2electron-beam evaporation 5nm titanium coating on thin layer, then prepare 100nm gold thin film formation electrode thereon.
Example 2:
(1) corrosion and the cleaning of monocrystalline silicon piece is completed by such scheme, wherein silicon wafer thickness 200 μm, resistivity 0.5 Ω cm;
(2) SiH is passed in a pecvd system
4, flow 40sccm, pressure 85Pa, time 3min, power 100W;
(3) magnetic control sputtering system forvacuum 3.7 × 10
-4pa, passes into high-purity Ar with 20sccm, and pressure in vacuum tank keeps 0.8Pa;
(4), after pre-sputtering, sputtering target material with on the silicon chip of thin amorphous silicon layer, regulates sputtering power 180W, sputtering time 3min to Mo to above-mentioned;
(5) when S and metal M o reacts, quartz ampoule is slowly heated to 825 DEG C, cools after constant temperature 15min;
(6) the obtained MoS of reaction
2at 1000 DEG C of annealing 0.75h;
(7) MoS is had on upper strata
2silicon chip back side thermal evaporation Al electrode, thickness is 150nm;
(8) at above-mentioned MoS
2electron-beam evaporation 10nm titanium coating on thin layer, then prepare 150nm gold thin film formation electrode thereon.
Example 3:
(1) corrosion and the cleaning of monocrystalline silicon piece is completed by such scheme, wherein silicon wafer thickness 250 μm, resistivity 0.8 Ω cm;
(2) SiH is passed in a pecvd system
4, flow 50sccm, pressure 90Pa, time 3min, power 120W;
(3) magnetic control sputtering system forvacuum 4.0 × 10
-4pa, passes into high-purity Ar with 20sccm, and pressure in vacuum tank keeps 1.0Pa;
(4), after pre-sputtering, sputtering target material with on the silicon chip of thin amorphous silicon layer, regulates sputtering power 220W, sputtering time 4min to Mo to above-mentioned;
(5) when S and metal M o reacts, quartz ampoule is slowly heated to 825 DEG C, cools after constant temperature 15min;
(6) the obtained MoS of reaction
2at 1000 DEG C of annealing 0.75h;
(7) MoS is had on upper strata
2silicon chip back side thermal evaporation Al electrode, thickness is 200nm;
(8) at above-mentioned MoS
2electron-beam evaporation 15nm titanium coating on thin layer, then prepare 200nm gold thin film formation electrode thereon.
Example 4:
(1) corrosion and the cleaning of monocrystalline silicon piece is completed by such scheme, wherein silicon wafer thickness 300 μm, resistivity 1.0 Ω cm;
(2) SiH is passed in a pecvd system
4, flow 60sccm, pressure 100Pa, time 4min, power 150W;
(3) magnetic control sputtering system forvacuum 4.5 × 10
-4pa, passes into high-purity Ar with 20sccm, and pressure in vacuum tank keeps 1.5Pa;
(4), after pre-sputtering, sputtering target material with on the silicon chip of thin amorphous silicon layer, regulates sputtering power 220W, sputtering time 5min to Mo to above-mentioned;
(5) when S and metal M o reacts, quartz ampoule is slowly heated to 850 DEG C, cools after constant temperature 20min;
(6) the obtained MoS of reaction
2at 1100 DEG C of annealing 1h;
(7) MoS is had on upper strata
2silicon chip back side thermal evaporation Al electrode, thickness is 300nm;
(8) at above-mentioned MoS
2electron-beam evaporation 15nm titanium coating on thin layer, then prepare 300nm gold thin film formation electrode thereon.
Because the step preparing solar cell is identical, the difference between each embodiment is only the difference of parameters, and in order to save space, above-mentioned example simply show the parameter in separate embodiment; Instantiation is as shown in table 1 below, and table 1 shows preparation method's embodiment of heterojunction solar battery.
Table 1
MoS in the present invention
2/ silicon heterogenous preparation method of solar battery, utilizes chemical vapor deposition (CVD) method can obtain large area, even, high crystalline quality stratiform MoS
2, this material has higher carrier mobility, and band gap controllable, the MoS of preparation
2/ Si heterojunction solar cell has normal temperature preparation, reduces the features such as silicon thin film consumption, while reduction device cost, can realize effective conversion of solar energy.
Those skilled in the art will readily understand; the foregoing is only preferred embodiment of the present invention; not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a preparation method for molybdenum bisuphide/silicon heterogenous solar cell, comprises the following steps:
(1) adopt acetone soln to carry out ultrasonic cleaning to monocrystalline silicon piece, remove organic dirt of silicon chip surface, and adopt alcohol to carry out to described silicon chip the acetone that described silicon chip surface is removed in ultrasonic cleaning, deionized water rinsing 3 times;
(2) adopt buffered etch liquid BOE to clean above-mentioned silicon chip, remove surface oxide layer, then rinse in deionized water, dry up with nitrogen, the monocrystalline silicon piece after cleaning is denoted as silicon chip A;
(3) 1.1 ~ 2 are adopted
wt% naOH and 1 ~ 3
vol% texturing is carried out in mixed solution corrosion of silicon A15 ~ 26 minute under 70 ~ 90 ° of C conditions of IPA, and surface forms inverted pyramid shape structure, and above-mentioned silicon chip is denoted as silicon chip B;
(4) NH is passed in a pecvd system
3, use NH
3plasma bombardment silicon chip B surface, realizes passivation to silicon chip B surface, reduces interfacial state, NH
3flow control is 20 ~ 30
sccm , pressure in vacuum tank remains on 0.5 ~ 1.2Pa;
(5) SiH is passed in a pecvd system
4, flow control is at 30 ~ 60sccm, and pressure in vacuum tank remains on 80 ~ 100Pa, time 2 ~ 4min, power 80 ~ 150W, forms the silicon chip C with intrinsic amorphous silicon film;
(6) by silicon chip
c be placed in magnetic control sputtering system, forvacuum is to 3.5 × 10
-4pa ~ 4.5 × 10
-4pa, pass into high-purity working gas Ar, flow control is at 20 ~ 40sccm, and pressure in vacuum tank remains on 0.5 ~ 1.5Pa;
(7) use Ar plasma pre-sputtering metal molybdenum target Mo to remove surface contaminant, the pre-sputtering time is 10 ~ 15min, underlayer temperature room temperature;
(8) sputter on Mo to silicon chip C, sputtering power is 150 ~ 250W, sputtering time 2 ~ 5min, and the silicon chip C being attached with described metal M o is called silicon chip D;
(9) quartz boat filling 1 ~ 3g sulphur powder is placed in heating furnace quartz ampoule ventilating opening low-temperature space, temperature 100 ~ 130 DEG C, silicon chip D is placed in stove central authorities, protective gas Ar10 ~ 15min is filled with emptying air to quartz ampoule, then heated quarty tube to 500 DEG C ~ 600 DEG C, wherein Ar throughput is 150 ~ 220sccm;
(10) keep above-mentioned Ar throughput constant, with slow heated quarty tube to 750 ~ 900 DEG C of 3 DEG C/min, after constant temperature 10 ~ 20min, be cooled to room temperature;
(11) remove the quartz boat that sulphur powder is housed, make silicon chip D carry out annealing in process in Ar atmosphere is enclosed, annealing temperature 950 ~ 1100 DEG C, annealing time is 0.5 ~ 1h, and the silicon chip after process is denoted as silicon chip E;
(12) at the reverse side thermal evaporation metallic aluminium of silicon chip E as back electrode, and at H
2annealing in process under atmosphere, annealing temperature is 450 DEG C ± 20 DEG C, and the annealing in process time is 25 ~ 35min, and the silicon chip with Al electrode is denoted as silicon chip F;
(13) silicon chip F contains MoS in front
2, it adopts electron beam evaporation prepare the titanium film that thickness is 5 ~ 15nm, then the gold thin film preparing 100 ~ 300nm thereon forms top electrode, forms heterojunction solar battery.
2. a kind of molybdenum bisuphide as claimed in claim 1/silicon heterogenous preparation method of solar battery, is characterized in that, described BOE liquid is the NH of volume ratio 6:1
4f and HF mixed solution; Wherein the concentration of ammonium fluoride solution is 35wt% ~ 45wt%, and hydrofluoric acid solution concentration is 45wt% ~ 55wt%.
3. a kind of molybdenum bisuphide as claimed in claim 1/silicon heterogenous preparation method of solar battery, is characterized in that, described silicon chip is p-type monocrystalline silicon piece, and thickness is 200 microns ~ 300 microns, and the resistivity of described monocrystalline silicon piece is 0.2 Ω ㎝ ~ 1.0 Ω ㎝.
4. a kind of molybdenum bisuphide as claimed in claim 1/silicon heterogenous preparation method of solar battery, is characterized in that, the purity of described metal M o target is 99.99%, with substrate parallel interval 10 ~ 15cm.
5. the heterojunction solar battery adopting the preparation method described in any one of claim 1 ~ 4 to obtain, it is characterized in that, be followed successively by Al back electrode (6), p-type monocrystalline silicon (5), intrinsic amorphous silicon film (4), molybdenum bisuphide thin layer (3), Ti metal level (2), Au metal level (1) from the bottom up.
6. a kind of molybdenum bisuphide as claimed in claim 1/silicon heterogenous preparation method of solar battery, is characterized in that, wherein described in step 6, the purity of high-purity working gas Ar is greater than 99.9%.
7. heterojunction solar battery as claimed in claim 5, it is characterized in that, described metal A l back electrode (6) thickness is 100 ~ 300 nanometers; P-type monocrystalline silicon (5) thickness is 150 microns ~ 300 microns; Intrinsic amorphous silicon film (4) thickness 2 ~ 8 nanometer; Molybdenum bisuphide thin layer (3) thickness is 10 ~ 30 nanometers; Ti metal level (2) thickness is 5 ~ 15 nanometers; Au metal level (1) thickness is 100 ~ 300 nanometers.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870253A (en) * | 2016-04-25 | 2016-08-17 | 华中科技大学 | Preparation method for WS<2>/Si heterojunction solar cell |
| CN107104165A (en) * | 2017-04-18 | 2017-08-29 | 云南大学 | One kind is based on graphene silicon inverted pyramid array Schottky photovoltaic cell manufacture method |
| CN107768432A (en) * | 2017-09-05 | 2018-03-06 | 华中科技大学 | A kind of two-dimentional molybdenum disulfide bottom gate type TFT device architectures and preparation method thereof |
| CN108998759A (en) * | 2018-08-08 | 2018-12-14 | 电子科技大学 | A method of improving multilayer molybdenum disulfide film indirect band gap luminescent properties |
| CN109004054A (en) * | 2018-07-11 | 2018-12-14 | 华中科技大学 | A kind of molybdenum sulfide thin film heteroj joint solar cell and its manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579419A (en) * | 2013-11-13 | 2014-02-12 | 苏州科技学院 | Grapheme/MoS2/Si heterojunction thin-film solar cell and manufacturing method thereof |
| US20140045295A1 (en) * | 2012-08-09 | 2014-02-13 | International Business Machines Corporation | Plasma annealing of thin film solar cells |
| CN104465844A (en) * | 2014-11-27 | 2015-03-25 | 中国石油大学(华东) | MoS2/Si p-n junction solar cell device and preparation method thereof |
| CN104617165A (en) * | 2015-01-23 | 2015-05-13 | 中国石油大学(华东) | Molybdenum disulfide/buffering later/silicon n-i-p solar cell device and preparation method thereof |
-
2015
- 2015-10-20 CN CN201510678656.3A patent/CN105244414B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140045295A1 (en) * | 2012-08-09 | 2014-02-13 | International Business Machines Corporation | Plasma annealing of thin film solar cells |
| CN103579419A (en) * | 2013-11-13 | 2014-02-12 | 苏州科技学院 | Grapheme/MoS2/Si heterojunction thin-film solar cell and manufacturing method thereof |
| CN104465844A (en) * | 2014-11-27 | 2015-03-25 | 中国石油大学(华东) | MoS2/Si p-n junction solar cell device and preparation method thereof |
| CN104617165A (en) * | 2015-01-23 | 2015-05-13 | 中国石油大学(华东) | Molybdenum disulfide/buffering later/silicon n-i-p solar cell device and preparation method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870253A (en) * | 2016-04-25 | 2016-08-17 | 华中科技大学 | Preparation method for WS<2>/Si heterojunction solar cell |
| CN105870253B (en) * | 2016-04-25 | 2018-02-27 | 华中科技大学 | A kind of WS2/ Si heterojunction solar battery preparation methods |
| CN107104165A (en) * | 2017-04-18 | 2017-08-29 | 云南大学 | One kind is based on graphene silicon inverted pyramid array Schottky photovoltaic cell manufacture method |
| CN107768432A (en) * | 2017-09-05 | 2018-03-06 | 华中科技大学 | A kind of two-dimentional molybdenum disulfide bottom gate type TFT device architectures and preparation method thereof |
| CN109004054A (en) * | 2018-07-11 | 2018-12-14 | 华中科技大学 | A kind of molybdenum sulfide thin film heteroj joint solar cell and its manufacturing method |
| CN108998759A (en) * | 2018-08-08 | 2018-12-14 | 电子科技大学 | A method of improving multilayer molybdenum disulfide film indirect band gap luminescent properties |
| CN108998759B (en) * | 2018-08-08 | 2020-10-09 | 电子科技大学 | Method for improving indirect band gap luminescence property of multilayer molybdenum disulfide film |
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