CN104332535B - A kind of substrate repeats the large-power light-emitting diodes epitaxial structure for utilizing - Google Patents
A kind of substrate repeats the large-power light-emitting diodes epitaxial structure for utilizing Download PDFInfo
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- CN104332535B CN104332535B CN201410551438.9A CN201410551438A CN104332535B CN 104332535 B CN104332535 B CN 104332535B CN 201410551438 A CN201410551438 A CN 201410551438A CN 104332535 B CN104332535 B CN 104332535B
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- 239000000758 substrate Substances 0.000 title claims abstract description 89
- 239000010410 layer Substances 0.000 claims abstract description 85
- 239000011241 protective layer Substances 0.000 claims abstract description 53
- 230000001590 oxidative effect Effects 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims description 24
- 239000000470 constituent Substances 0.000 claims description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 230000007797 corrosion Effects 0.000 description 17
- 238000005260 corrosion Methods 0.000 description 17
- 230000003647 oxidation Effects 0.000 description 16
- 238000007254 oxidation reaction Methods 0.000 description 16
- 150000001875 compounds Chemical class 0.000 description 15
- 238000000034 method Methods 0.000 description 12
- 239000002131 composite material Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 206010040844 Skin exfoliation Diseases 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000002585 base Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003708 ampul Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000007771 core particle Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000035618 desquamation Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Abstract
The present invention discloses a kind of substrate and repeats the large-power light-emitting diodes epitaxial structure for utilizing, including epitaxial substrate, substrate protective layer, oxidizing feelng-off-layer, extension protective layer, metallic reflector and extension ray structure；Oxidizing feelng-off-layer is set between epitaxial substrate and extension ray structure, extension protective layer is set between oxidizing feelng-off-layer and extension ray structure, substrate protective layer is set between oxidizing feelng-off-layer and epitaxial substrate；Delay outside on photo structure and metallic reflector is set, substrate is set on metallic reflector.The present invention can solve to peel off the epitaxial substrate of diode and cause epitaxial layer damaging problem, cost-effective such that it is able to reuse substrate.
Description
Technical field
The present invention relates to LED technology field, particularly relate to a kind of substrate and repeat the high-power light-emitting two for utilizing
Pole pipe epitaxial structure.
Background technology
Light emitting diode（LED）With low-power consumption, size be small and high reliability, obtained comparatively fast as principal light source
Development, especially the utilization field of light emitting diode extends rapidly in recent years, in light emitting diode application field, it is desirable to luminous two
The brightness of pole pipe is improved, and cost is relatively low.
In the prior art, higher luminous intensity can be obtained using the chip fabrication technique of inverted structure light emitting diode,
But the technique cost of manufacture of the structure is high, the cost of inverted structure chip is reduced at present mainly by reducing the prices of raw materials and carrying
The methods such as high finished product rate are realized.Reduce prices of raw materials method reduction cost of manufacture relatively limited, and raw material repeat what is utilized
LED production method, not only can be with reduces cost and more environmentally friendly.
In the prior art, because the speed that existing lift-off technology is peeled off relatively keeps extension ray structure slowly and after peeling off
The success rate of integrality is relatively low, so the substrate of inverted structure light emitting diode is wasted typically using corrosion or grinding removal
Epitaxial substrate and pollution of the manufacturing process to environment is aggravated.To solve described problem, thus this case produces.
The content of the invention
The large-power light-emitting diodes epitaxial structure for utilizing is repeated it is an object of the invention to provide a kind of substrate, to increase
Plus the speed and improving at corrosion peeling liner bottom peel off after keep the success rate of extension ray structure integrality, reduce stripping technology and
Cause epitaxial layer damaging problem, so as to obtaining, substrate can be reused, save the production cost of light emitting diode.
To reach above-mentioned purpose, solution of the invention is：
A kind of substrate repeats the large-power light-emitting diodes epitaxial structure for utilizing, including epitaxial substrate, substrate protective layer,
Oxidizing feelng-off-layer, extension protective layer, metallic reflector and extension ray structure；Set between epitaxial substrate and extension ray structure
Oxidizing feelng-off-layer is put, extension protective layer, oxidizing feelng-off-layer and epitaxial substrate are set between oxidizing feelng-off-layer and extension ray structure
Between substrate protective layer is set；Delay outside on photo structure and metallic reflector is set, substrate is set on metallic reflector.
Further, oxidizing feelng-off-layer is formed by after the oxidized technique of extension peel ply；The composition material of oxidizing feelng-off-layer
Material includes the mixture and its compound of AlAs and aluminum oxide.
Further, the thickness of oxidizing feelng-off-layer is 30-100nm.
Further, the constituent material of extension peel ply includes AlAs.
Further, the thickness of extension peel ply is 30-100nm.
Further, extension protective layer is the double-decker being made up of the first extension protective layer and the second extension protective layer.
Further, the constituent material of the first extension protective layer includes (AlxGa1-x)0.5In0.5P,0≤x≤1；Second extension
The constituent material of protective layer includes AlyGa1-yAs,0≤y≤0.5。
Further, the constituent material of substrate protective layer includes (AlxGa1-x)0.5In0.5P,0≤x≤0.5。
Further, extension ray structure is limited by the first type current extending, the first type limiting layer, active layer, Second-Type
Layer and Second-Type current extending are constituted；Active layer side set the first type current extending, the first type current extending with
First type limiting layer is set between active layer；Active layer opposite side sets Second-Type current extending, in Second-Type current expansion
Second-Type limiting layer is set between layer and active layer.
Further, the constituent material of the first type current extending, the first type limiting layer and Second-Type limiting layer includes
(AlxGa1-x)0.5In0.5P、AlyGa1-yAs, 0≤x≤1,0≤y≤0.5；The constituent material of active layer includes (AlxGa1-x)0.5In0.5P、AlyGa1-yAs, 0≤x≤1,0≤y≤0.5；The constituent material of Second-Type current extending includes (AlxGa1-x)0.5In0.5P、AlyGa1-yAs, GaP, 0≤x≤1,0≤y≤0.5.
A kind of substrate repeats the large-power light-emitting diodes epitaxial structure preparation method for utilizing, and comprises the following steps：
First, extension substrate surface by it is lower from above sequentially form cushion, substrate protective layer, extension peel ply, extension protect
Sheath and extension ray structure.
2nd, oxidation is carried out to extension peel ply and forms oxidizing feelng-off-layer；Protected in logical nitrogen by using quartz tube furnace, stone
English pipe is passed through water vapour and enters quartz ampoule under 220-380 DEG C of temperature conditionss, until oxidation forms oxidizing feelng-off-layer.
Three, evaporation metal reflecting layer on the Second-Type current extending of photo structure is delayed outside；By metallic reflector and base
Plate is bonded together.
The 4th, substrate is sticky in the supporting spring platform of corrosion device, supporting spring platform band spinfunction, using strong base solution in support
Corrosion oxidation peel ply under conditions of disc spins, until extension ray structure is peeled off with epitaxial substrate, obtains repeating what is utilized
Epitaxial substrate.Because substrate protective layer and the extension protective layer contacted with oxidizing feelng-off-layer use (AlxGa1-x)0.5In0.5P tri- or five
Compounds of group, so epitaxial substrate and extension ray structure will not effectively be protected by alkali corrosion.
Further, the velocity of rotation of supporting spring platform sets 6 revs/min -120 revs/min of scope；The rotating speed of pallet is initially setting
70-120 revs/min of scope, the velocity of rotation of corrosion process supporting spring platform is gradually reduced, to the rotation speed of corrosion later stage supporting spring platform
20-6 revs/min of the setting range of degree, until extension ray structure is peeled off with epitaxial substrate.
Further, extension ray structure is by the first type current extending, the first type that are successively set on extension protective layer
Limiting layer, active layer, Second-Type limiting layer and Second-Type current extending are constituted, and are also included after step 3：Epitaxial substrate,
Substrate back forms Protection glue；After corrosion oxidation peel ply is peeled off to extension ray structure and epitaxial substrate, removal epitaxial substrate,
Substrate back Protection glue.
Also include after step 4：Extension protective layer is removed using wet etching；In the first type current extending upper surface
First electrode is set, second electrode is set in the lower surface of substrate, cutting splits into core particles, obtains light emitting diode.
After such scheme, the present invention is peeled off by setting one layer of oxidation between epitaxial substrate and extension ray structure
Layer.When making substrate repeats the large-power light-emitting diodes epitaxial structure for utilizing, using alkali corrosion oxidizing feelng-off-layer, and
Use supporting spring platform to rotate and cause that epitaxial substrate produces the centrifugal force that externally delayed action photo structure is separate, accelerate peeling rate, solve
The slow problem of epitaxial substrate peeling rate.It is bonded in the last rigid stripping technology peeled off again, solution on substrate again using initial oxidation
Stripping process of having determined is easily caused the problem that local extension ray structure is damaged, and improves using substrate desquamation technology manufacture hair
The yield rate of optical diode.
The constituent material of extension peel ply includes AlAs III-V compounds, and extension peel ply is mixed without any conductivity type
It is miscellaneous.Subsequent oxidation technique relative material design aspect can be made to reach maximum oxidation rate using AlAs III-Vs compound.Oxidation
Peel ply thickness range uses 30-100nm.Thickness can decline less than 30nm oxidation rates in subsequent oxidation technique；And it is follow-up
Corroding peeling rate in corrosion stripping technology can also decline.
Extension protective layer is set to the first extension protective layer and the second extension protective layer double-decker, the first extension protective layer
Constituent material include (AlxGa1-x)0.5In0.5P,0≤x≤1；The constituent material of the second extension protective layer includes AlyGa1-yAs,
0≤y≤0.5.Using the design of double-deck different materials system, for the first type current extending, the different materials of oxidizing feelng-off-layer
Material system, simplifies subsequent manufacturing processes process, by using wet etching lower cost.Second extension protective layer uses Al components
AlGaAs materials less than 50% prevent oxidation of the subsequent oxidation technique to AlGaAs materials.
Brief description of the drawings
Fig. 1 is epitaxial structure schematic diagram of the invention；
Fig. 2 is the structural representation after metallic reflector of the invention is bonded with silicon substrate；
Fig. 3 is the corrosion device and corrosion process schematic diagram that the present invention is used；
Fig. 4 is chip structure schematic diagram of the invention.
Label declaration
The extension peel ply 2 of epitaxial substrate 1
Oxidizing feelng-off-layer 21
The type current extending 31 of extension ray structure 3 first
The active layer 33 of first type limiting layer 32
The Second-Type current extending 35 of Second-Type limiting layer 34
The extension protective layer 41 of extension protective layer 4 first
The substrate protective layer 5 of second extension protective layer 42
The metallic reflector 7 of cushion 6
The etching tank 9 of silicon substrate 8
The supporting spring platform 92 of rotary shaft 91
The second electrode 11 of first electrode 10.
Specific embodiment
The present invention is described in detail below in conjunction with drawings and the specific embodiments.
Refering to shown in Fig. 1, a kind of substrate that the present invention is disclosed repeats the large-power light-emitting diodes epitaxial structure for utilizing,
Including epitaxial substrate 1, extension peel ply 2 and extension ray structure 3；Set between epitaxial substrate 1 and extension ray structure 3 outer
Prolong peel ply 2.
Extension ray structure 3 is the first type current extending 31, the limitation of the first type being successively set on extension peel ply 2
Layer 32, active layer 33, Second-Type limiting layer 34 and Second-Type current extending 35 are constituted.
Extension protective layer 4 is set between extension peel ply 2 and extension ray structure 3.Extension protective layer 4 is set to outside first
Prolong the double-decker of 41 and second extension protective layer of protective layer 42.
Substrate protective layer 5 is set between extension peel ply 2 and epitaxial substrate 1, and in epitaxial substrate 1 and substrate protective layer 5
Between set cushion 6.
As shown in Figures 1 to 4, a kind of large-power light-emitting diodes for utilizing of being repeated with substrate that the present invention is disclosed
Preparation method, comprises the following steps that：
Step one, as shown in figure 1, the surface of epitaxial substrate 1 from the bottom to top successively epitaxial buffer layer 6, substrate protective layer 5,
Extension peel ply 2, extension protective layer 4, the first type current extending 31, the first type limiting layer 32, the limitation of active layer 33, Second-Type
Layer 34, Second-Type current extending 35.
Wherein, epitaxial substrate 1 uses two inches of the GaAs substrates with n-type conductivity, and thickness is 250nm.Substrate is protected
The composition material of sheath 5 is (Al0.5Ga0.5)0.5In0.5P III-V compounds, it is 300nm to use thickness.Extension peel ply 2
Composition material is the AlAs III-V compounds without the doping of any conductivity type, and thickness uses 90nm.
Extension protective layer 4 is set to the first extension protective layer 41 and the double-decker of the second extension protective layer 42.First extension
The composition material of protective layer 41 is Ga0.5In0.5P III-V compounds, it is 500nm to use thickness.Second extension protective layer 42
Composition material is GaAs III-V compounds, and it is 50nm to use thickness.
The composition material of the first type current extending 31 is (Al0.5Ga0.5)0.5In0.5P III-V compounds, using thickness
It is 7 μm.The concrete composition material of the first type limiting layer 32 is (Al0.8Ga0.2)0.5In0.5P III-V compounds, use thickness for
600nm.Active layer 33 builds the quantum structure of alternating growth using SQW with quantum.The composition material of SQW is
(Al0.1Ga0.9)0.5In0.5P III-V compounds, it is 10nm to use thickness.The composition material that quantum is built is (Al0.85Ga0.15)0.5In0.5P III-V compounds, it is 10nm to use thickness.It is 30 pairs that SQW and quantum build the logarithm for intersecting.Second-Type is limited
The composition material of layer 34 is (Al0.8Ga0.2)0.5In0.5P III-V compounds, it is 800nm to use thickness.Second-Type current expansion
The composition material of layer 35 is GaP III-V compounds, and it is 5 μm to use thickness.
Step 2, extension peel ply 2 is aoxidized using oxidation technology, form oxidizing feelng-off-layer 21.By using stone
English pipe furnace is protected in logical nitrogen, and quartz ampoule is passed through water vapour into quartz ampoule until extension is peeled off under 300 DEG C of temperature conditionss
Layer is oxidized to oxidizing feelng-off-layer 21.
Step 3, the evaporation metal reflecting layer 7 on Second-Type current extending 35.
Step 4, by the upper surface of metallic reflector 7 and silicon substrate 8（With conductiving doping）It is bonded in by metal adhesion layer
Together, as shown in Figure 2.
Step 5, silicon substrate 8, the back side of epitaxial substrate 1 make Protection glue.
Step 6, using strong base solution NaOH corrosion by aluminum oxide in the oxidizing feelng-off-layer 21 after oxidation technology etc. change
Compound.Etch chemistries formula：Al2O3+2NaOH==2NaAlO2+H2O.The NaAlO of generation2Water is highly soluble in, highly basic will not be prevented molten
Liquid NaOH continues to etch the aluminum oxide in oxidizing feelng-off-layer 21.
Step 7, as shown in figure 3, using supporting spring platform 92 the corrosion device corrosion oxidation peel ply 21 with spinfunction：
One supporting spring platform 92 is arranged at the top that center of the etching tank 9 in groove has rotary shaft 91, rotary shaft 91, silicon substrate 8
Back is viscous to be sticked to supporting spring platform 92.Pour into strong base solution in etching tank 9, highly basic easily to the etching action of aluminum oxide under,
The surrounding of extension ray structure 3 forms the fine pits for enclosing oxidizing feelng-off-layer 21.The speed of rotation of rotary shaft 91 is adjusted, due to silicon
Substrate 8 is fixed on supporting spring platform 92, and rotation produces centrifugal force to cause that epitaxial substrate 1 obtains one relative to extension ray structure 3
Individual upward centrifugal force F, promotes the strong base solution of more high concentrations to flow into recess contact and etching oxidizing feelng-off-layer 21
Aluminum oxide.
Larger with the contact area of extension ray structure 3 due to just starting oxidizing feelng-off-layer 21, adhesion is larger.Initial speed
Rate can be set comparatively fast, and initial set value is to turn 120 revs/min.But with the increase of corrosion depth, the face of oxidizing feelng-off-layer 21
Product is gradually reduced, and oxidizing feelng-off-layer 21 is tapered into the adhesion of extension ray structure 3.In order to prevent due to epitaxial substrate 1
Adhesions of the upward centrifugal force F more than extension ray structure 3 and oxidizing feelng-off-layer 21, and cause the quilt of extension ray structure 3
Tear.The speed of rotation needs gradually to reduce.When oxidizing feelng-off-layer 21 is etched to original 1/6th of area deficiency, rotation
Rate reduction to 6 revs/min, up to extension ray structure 3 with epitaxial substrate 1 peel off by corrosion, obtains the repeatable extension for utilizing
Substrate 1.
Following steps are by reusing epitaxial substrate 1, while making light emitting diode：
Step 8, removal epitaxial substrate 1, the back-protective glue of silicon substrate 8.
Step 9, remove the extension protective layer 4 adjacent with the first type current extending 31 respectively using wet etching.
Step 10, first electrode 10 is done in the upper surface of the first type current extending 31, the is made in the lower surface of silicon substrate 8
Two electrodes 11, cutting splits into core particles, obtains light emitting diode as shown in Figure 4.
One embodiment of the present of invention is the foregoing is only, not to the limitation of this case design, all designs according to this case are closed
The equivalent variations that key is done, each fall within the protection domain of this case.
Claims (8)
1. a kind of substrate repeats the large-power light-emitting diodes epitaxial structure for utilizing, it is characterised in that：Including epitaxial substrate, lining
Bottom protective layer, oxidizing feelng-off-layer, extension protective layer, metallic reflector and extension ray structure；Lighted in epitaxial substrate and extension
Oxidizing feelng-off-layer is set between structure, extension protective layer, oxidizing feelng-off-layer are set between oxidizing feelng-off-layer and extension ray structure
Substrate protective layer is set between epitaxial substrate；Delay outside on photo structure and metallic reflector is set, set on metallic reflector
Put substrate.
2. a kind of substrate as claimed in claim 1 repeats the large-power light-emitting diodes epitaxial structure for utilizing, and its feature exists
In：The constituent material of oxidizing feelng-off-layer includes the mixture of AlAs and aluminum oxide.
3. a kind of substrate as claimed in claim 1 repeats the large-power light-emitting diodes epitaxial structure for utilizing, and its feature exists
In：The thickness of oxidizing feelng-off-layer is 30-100nm.
4. a kind of substrate as claimed in claim 1 repeats the large-power light-emitting diodes epitaxial structure for utilizing, and its feature exists
In：Extension protective layer is the double-decker being made up of the first extension protective layer and the second extension protective layer.
5. a kind of substrate as claimed in claim 4 repeats the large-power light-emitting diodes epitaxial structure for utilizing, and its feature exists
In：The constituent material of the first extension protective layer includes (AlxGa1-x)0.5In0.5P,0≤x≤1；The composition of the second extension protective layer
Material includes AlyGa1-yAs,0≤y≤0.5。
6. a kind of substrate as claimed in claim 1 repeats the large-power light-emitting diodes epitaxial structure for utilizing, and its feature exists
In：The constituent material of substrate protective layer includes (AlxGa1-x)0.5In0.5P,0≤x≤0.5。
7. a kind of substrate as claimed in claim 1 repeats the large-power light-emitting diodes epitaxial structure for utilizing, and its feature exists
In：Extension ray structure is by the first type current extending, the first type limiting layer, active layer, Second-Type limiting layer and Second-Type electricity
Stream extension layer is constituted；Active layer side sets the first type current extending, is set between the first type current extending and active layer
Put the first type limiting layer；Active layer opposite side sets Second-Type current extending, Second-Type current extending and active layer it
Between set Second-Type limiting layer.
8. a kind of substrate as claimed in claim 7 repeats the large-power light-emitting diodes epitaxial structure for utilizing, and its feature exists
In：The constituent material of the first type current extending, the first type limiting layer and Second-Type limiting layer includes (AlxGa1-x)0.5In0.5P
Or AlyGa1-yAs, 0≤x≤1,0≤y≤0.5；The constituent material of active layer includes (AlxGa1-x)0.5In0.5P or AlyGa1-yAs,
0≤x≤1,0≤y≤0.5；The constituent material of Second-Type current extending includes (AlxGa1-x)0.5In0.5P or AlyGa1-yAs or
GaP, 0≤x≤1,0≤y≤0.5.
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| CN201410551438.9A CN104332535B (en) | 2014-10-17 | 2014-10-17 | A kind of substrate repeats the large-power light-emitting diodes epitaxial structure for utilizing |
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Effective date of registration: 20231109 Address after: 330103 no.1288 Ningyuan street, Wangcheng New District, Xinjian District, Nanchang City, Jiangxi Province Patentee after: Jiangxi Qianzhao Semiconductor Technology Co.,Ltd. Address before: 361000 Fujian Xiamen torch high tech Zone (Xiangan) Industrial Zone, No. 259-269, Xiang Tian Road. Patentee before: Xiamen Changelight Co.,Ltd. |