CN101540363A - Method for coarsening surface of quaternary system AlGaInP LED chip - Google Patents
Method for coarsening surface of quaternary system AlGaInP LED chip Download PDFInfo
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- CN101540363A CN101540363A CN200910057143A CN200910057143A CN101540363A CN 101540363 A CN101540363 A CN 101540363A CN 200910057143 A CN200910057143 A CN 200910057143A CN 200910057143 A CN200910057143 A CN 200910057143A CN 101540363 A CN101540363 A CN 101540363A
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Abstract
The invention relates to a method for coarsening the surface of a quaternary system AlGaInP LED chip, including the following steps: firstly, chip scribing, the process of contact scribing is used for scribing the chip to a substrate; secondly, clamping device making, the clamping device comprises a rotary chassis, a water tap above the chassis and a liquid holding slot connected with the water tap; thirdly, chip expansion, a plastic membrane is fixed on a chip expansion ring, the scribed chip is stuck on the plastic membrane and is processed by the operation of micro-expansion according to the proportion of 1 : 0.4 to 1:0.7, and the chip expansion ring is installed on the rotary chassis; fourthly, NaCLO corrosive liquid preparation, NaCLO solution and water, of which the volume ratio is 1:5 to 1:12, are used for preparing the NaCLO corrosive liquid, and the pH value of the NaCLO corrosive liquid ranges from 4 to 8; and fifthly, the NaCLO corrosive liquid is sprayed on the scribed chip. The invention mainly refers to the treatment of coarsening the front face and the lateral face of the chip so as to refract light from the interior, which results in improving the light-emitting efficiency.
Description
Technical field
Patent of the present invention relates to the semiconductor chip manufacturing technology, particularly a kind of quaternary superelevation azarin, yellow light-emitting diode (LED) chip surface method of roughening.
Background technology
LED is the abbreviation of English light emitting diode (light-emitting diode); its basic structure is an electroluminescent semi-conducting material, places on the leaded shelf, uses epoxy sealing then all around; play the effect of protection internal core, so the anti-seismic performance of LED is good.The wafer that the core of light-emitting diode is made up of P type semiconductor and N type semiconductor has a transition zone between P type semiconductor and N type semiconductor, be called the P-N knot.In the PN junction of some semi-conducting material, the minority carrier of injection and majority carrier compound tense can discharge the form of unnecessary energy with light, thereby electric energy directly is converted to luminous energy.PN junction adds reverse voltage, and minority carrier is difficult to inject, so not luminous.This diode that utilizes the making of injection electroluminescence principle is generally called LED light-emitting diode.When it is in the forward operating state (two ends add forward voltage), when electric current flowed to negative electrode from the LED anode, semiconductor crystal just sent the light from ultraviolet to infrared different colours, the power of light and current related.
Quaternary system AlGaInP LED of new generation as environmental protection and energy saving is reliable and stable owing to it, long service life is widely used in high-grade demonstration fields such as single lamp, number, display screen, brightness does not often reach requirement, quaternary system AlGaInP LED is owing to chip sides after the scribing is also very level and smooth by the smooth and light-emitting area that blade grinds, to such an extent as to light continues reflection at chip internal, most of light is depleted, the chip light-emitting rate is not high, the low development that has then directly restricted LED of light extraction efficiency.
Given this, be necessary in fact to provide a kind of quaternary superelevation azarin of novel raising light emission rate, the yellow method for manufacturing LED chip of sending out to solve the problems of the technologies described above.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method for coarsening surface of quaternary system AlGaInP LED chip, makes it at the light extraction efficiency that keeps obviously having improved under the constant prerequisite of epitaxial layer structure led chip.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: a kind of method for coarsening surface of quaternary system AlGaInP LED chip is characterized in that this method may further comprise the steps:
It is to prepare between 1: 5 to 1: 12 by volume that step 4, preparation NaCLO corrosive liquid, described NaCLO corrosive liquid adopt NaCLO solution and water, the pH value of this NaCLO corrosive liquid between 4-8, temperature is at 76-85 ℃;
Step 5 is poured the NaCLO corrosive liquid for preparing in the liquid holding groove of corrosion clamp into, opens rotating chassis and tap sprinkling NaCLO corrosive liquid and begins corrosion, and every corrodes 40-70 second;
Step 6 after the corrosion, is used washed with de-ionized water, dries up with drying nitrogen again.
As one of optimal way of the present invention, the pH value of NaCLO corrosive liquid is 5.
As one of optimal way of the present invention, it is 1: 9 by volume that the NaCLO corrosive liquid adopts NaCLO solution and water.
As one of optimal way of the present invention, this NaCLO corrosive liquid temperature is 80 ℃
For above-mentioned light-emitting diode chip for backlight unit, comprise the AlGaInP/GaAs substrate, cover Window layer and the Multiple Quantum Well on the above-mentioned substrate and comprise PN face ohmic contact layer and the pressure welding electrode is that gold electrode, thickness are 10000A.
Method for coarsening surface of quaternary system AlGaInP LED chip of the present invention has kept original epitaxial layer structure, avoids factors such as chip is impaired.The present invention carries out chemical treatment simultaneously to chip front side and side, and it is coarse even to make that smooth front and side become, and light reflects internally, thereby improves light extraction efficiency.And chip bottom keeps original smooth state, follow-up packaging technology is not produced any adverse effect.
Description of drawings
Fig. 1 is the process chart of method for coarsening surface of quaternary system AlGaInP LED chip of the present invention.
Fig. 2 is the structural representation of self-control anchor clamps among the present invention.
Embodiment
The present invention relates to method for coarsening surface of quaternary system AlGaInP LED chip, described quaternary system AlGaInP LED chip comprises the AlGaInP/GaAs substrate, covers Window layer and the Multiple Quantum Well on the above-mentioned substrate and comprises PN face ohmic contact layer and the pressure welding electrode is that gold electrode, thickness are 10000A.
This kind method for coarsening surface of quaternary system AlGaInP LED chip has still kept original epitaxial layer structure, thereby avoids chip not impaired.
Concrete referring to embodiment one
At first, adopt the contact scribing process that chip (wafer) is carried out scribing, the contact scribing process mainly contains several different methods such as saw blade, blade cuts, since after the scribing chip sides by blade grind smooth, to such an extent as to light continues reflection at chip internal, most of light is depleted, and causes light extraction efficiency low.
Secondly, the self-control anchor clamps, these anchor clamps comprise can Rotating with Uniform chassis 3, be arranged at the tap 2 of 3 tops, chassis and the liquid holding groove 1 that is connected with tap 2, described tap 2 can evenly spray solution in the liquid holding groove 3 by water pump 4, tap 2 delivery ports are apart from chassis 1 about 5 centimeters.
Once more, expand sheet, plastic film is fixed on the expansion loop, chip after the scribing is attached on the plastic film, chip after the scribing is carried out little expansion in 1: 0.4 ratio, be installed on the chassis of rotation, once more expanding loop, preparation NaCLO corrosive liquid, described NaCLO corrosive liquid adopts NaCLO solution and water to be by volume
Preparation in 1: 5, the pH value of this NaCLO corrosive liquid is 4, temperature is 76 ℃,
At last, pour the NaCLO corrosive liquid for preparing 3 li of the liquid holding grooves of corrosion clamp into, open rotating chassis 1 and tap 2 and spray the NaCLO corrosive liquids and begins corrosion, every corrosion 40 seconds after the corrosion, is used washed with de-ionized water, dries up with drying nitrogen again.
| Sample | Forward voltage (V) @20mA | Brightness (mcd) | Reverse current (μ A) @-5V |
| Not alligatoring | 3.3 | 51 | 0.01 |
| Alligatoring | 3.7 | 64 | 0.3 |
The photoelectric properties parameter of table one chip relatively
Please refer to table one experimental data, the chip light intensity improves the relative raising that does not process more than 20%.
Embodiment two
At first, adopt blade that chip (wafer) is carried out scribing,
Secondly, self-control anchor clamps, these anchor clamps comprise can Rotating with Uniform chassis, the tap that is arranged at the top, chassis and the liquid holding groove that is connected with tap, described tap can evenly spray the interior solution of liquid holding groove,
Once more, expand sheet, plastic film is fixed on the expansion loop, chip after the scribing is attached on the plastic film, chip after the scribing is carried out little expansion in 1: 0.5 ratio, be installed on the chassis of rotation, once more expanding loop, preparation NaCLO corrosive liquid, described NaCLO corrosive liquid adopts NaCLO solution and water to be by volume
1: 9, the pH value of this NaCLO corrosive liquid was 5, temperature is 80 ℃,
At last, pour the NaCLO corrosive liquid for preparing 3 li of the liquid holding grooves of corrosion clamp into, open rotating chassis and tap and spray the NaCLO corrosive liquid and begins corrosion, every corrosion 50 seconds after the corrosion, is used washed with de-ionized water, dries up with drying nitrogen again.
| Sample | Forward voltage (V) @20mA | Brightness (mcd) | Reverse current (μ A) @-5V |
| Not alligatoring | 3.3 | 51 | 0.01 |
| Alligatoring | 3.7 | 67 | 0.3 |
The photoelectric properties parameter of table two chip relatively
Please refer to table two experimental data, the chip light intensity improves the relative raising that does not process more than 30%.
Embodiment three
At first, adopt blade that chip (wafer) is carried out scribing,
Secondly, self-control anchor clamps, these anchor clamps comprise can Rotating with Uniform chassis, the tap that is arranged at the top, chassis and the liquid holding groove that is connected with tap, described tap can evenly spray the interior solution of liquid holding groove,
Once more, expand sheet, plastic film is fixed on the expansion loop, chip after the scribing is attached on the plastic film, chip after the scribing is carried out little expansion in 1: 0.7 ratio, be installed on the chassis of rotation, once more expanding loop, preparation NaCLO corrosive liquid, described NaCLO corrosive liquid adopts NaCLO solution and water to be by volume
1: 12, the pH value of this NaCLO corrosive liquid was 8, temperature is 85 ℃,
At last, pour the NaCLO corrosive liquid for preparing 3 li of the liquid holding grooves of corrosion clamp into, open rotating chassis and tap and spray the NaCLO corrosive liquid and begins corrosion, every corrosion 70 seconds after the corrosion, is used washed with de-ionized water, dries up with drying nitrogen again.
| Sample | Forward voltage (V) @20mA | Brightness (mcd) | Reverse current (μ A) @-5V |
| Not alligatoring | 3.3 | 51 | 0.01 |
| Alligatoring | 3.7 | 71 | 0.3 |
The photoelectric properties parameter of table three chip relatively
Please refer to table three experimental data, the chip light intensity improves the relative raising that does not process more than 40%.
The present invention makes coarse that smooth side becomes evenly light be reflected internally, thereby improves light extraction efficiency by roughening treatment is carried out on the quaternary system AlGaInP LED chip surface.And chip bottom keeps original smooth state, not to any influence of follow-up encapsulation, as climbs glue.
Above-mentioned description to embodiment is can understand and apply the invention for ease of those skilled in the art.The person skilled in the art obviously can easily make various modifications to these embodiment, and needn't pass through performing creative labour being applied in the General Principle of this explanation among other embodiment.Therefore, the invention is not restricted to the embodiment here, those skilled in the art should be within protection scope of the present invention for improvement and modification that the present invention makes according to announcement of the present invention.
Claims (4)
1, a kind of method for coarsening surface of quaternary system AlGaInP LED chip is characterized in that, this method may further comprise the steps:
Step 1, scribing adopts the contact scribing process that chip is carried out scribing to substrate;
Step 2, the self-control anchor clamps, it comprises the chassis of rotation, the tap above the chassis and the liquid holding groove that is connected with tap,
Step 3 expands sheet, and plastic film is fixed on the expansion loop, the chip after the scribing is attached on the plastic film, to the chip after the scribing in 1: 0.4-1: 0.7 ratio is carried out little expansion, and the expansion loop is installed on the chassis of rotation;
It is to prepare between 1: 5 to 1: 12 by volume that step 4, preparation NaCLO corrosive liquid, described NaCLO corrosive liquid adopt NaCLO solution and water, the pH value of this NaCLO corrosive liquid between 4-8, temperature is at 76-85 ℃;
Step 5 is poured the NaCLO corrosive liquid for preparing in the liquid holding groove of corrosion clamp into, opens rotating chassis and tap sprinkling NaCLO corrosive liquid and begins corrosion, and every corrodes 40-70 second;
Step 6 after the corrosion, is used washed with de-ionized water, dries up with drying nitrogen again.
2, method for coarsening surface of quaternary system AlGaInP LED chip as claimed in claim 1 is characterized in that: the pH value of NaCLO corrosive liquid is 5.
3, method for coarsening surface of quaternary system AlGaInP LED chip as claimed in claim 1 is characterized in that: it is 1: 9 by volume that the NaCLO corrosive liquid adopts NaCLO solution and water.
4, method for coarsening surface of quaternary system AlGaInP LED chip as claimed in claim 1 is characterized in that: this NaCLO corrosive liquid temperature is 80 ℃.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102163668A (en) * | 2010-02-24 | 2011-08-24 | 大连美明外延片科技有限公司 | Manufacturing method of AlGaInP light-emitting diode |
| CN102376827A (en) * | 2010-08-13 | 2012-03-14 | 大连美明外延片科技有限公司 | Preparation method of AlGaInp light-emitting diode |
| CN102468376A (en) * | 2010-11-16 | 2012-05-23 | 上海大晨光电科技有限公司 | Method for preparing ternary GaAsP aluminum electrode light-emitting diode chip |
| CN102828185A (en) * | 2012-08-16 | 2012-12-19 | 中国科学院西安光学精密机械研究所 | Optical element processing method based on thermal accelerated corrosion |
| CN105070800A (en) * | 2015-09-10 | 2015-11-18 | 天津理工大学 | AlGaInP quaternary-system LED gallium phoshpide window layer coarsening method |
| CN111223967A (en) * | 2018-11-26 | 2020-06-02 | 山东浪潮华光光电子股份有限公司 | Manufacturing method for coarsening side wall of GaAs-based red light LED tube core |
-
2009
- 2009-04-28 CN CN200910057143A patent/CN101540363A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102163668A (en) * | 2010-02-24 | 2011-08-24 | 大连美明外延片科技有限公司 | Manufacturing method of AlGaInP light-emitting diode |
| CN102376827A (en) * | 2010-08-13 | 2012-03-14 | 大连美明外延片科技有限公司 | Preparation method of AlGaInp light-emitting diode |
| CN102468376A (en) * | 2010-11-16 | 2012-05-23 | 上海大晨光电科技有限公司 | Method for preparing ternary GaAsP aluminum electrode light-emitting diode chip |
| CN102468376B (en) * | 2010-11-16 | 2013-10-09 | 上海大晨光电科技有限公司 | Method for preparing ternary GaAsP aluminum electrode light-emitting diode chip |
| CN102828185A (en) * | 2012-08-16 | 2012-12-19 | 中国科学院西安光学精密机械研究所 | Optical element processing method based on thermal accelerated corrosion |
| CN105070800A (en) * | 2015-09-10 | 2015-11-18 | 天津理工大学 | AlGaInP quaternary-system LED gallium phoshpide window layer coarsening method |
| CN111223967A (en) * | 2018-11-26 | 2020-06-02 | 山东浪潮华光光电子股份有限公司 | Manufacturing method for coarsening side wall of GaAs-based red light LED tube core |
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Application publication date: 20090923 |