CN102163668A

CN102163668A - Manufacturing method of AlGaInP light-emitting diode

Info

Publication number: CN102163668A
Application number: CN2010101151617A
Authority: CN
Inventors: 高百卉; 薛蕾; 武胜利; 林晓文; 陈向东; 肖志国
Original assignee: Dalian Meiming Epitaxial Wafer Technology Co Ltd
Current assignee: Dalian Meiming Epitaxial Wafer Technology Co Ltd
Priority date: 2010-02-24
Filing date: 2010-02-24
Publication date: 2011-08-24

Abstract

The invention relates to a manufacturing method of an AlGaInP light-emitting diode, which comprises the following steps: completing the steps of performing epitaxial growth on an AlGaInP light-emitting diode chip and manufacturing an electrode, then increasing one-time sideetching for a chip substrate after half-cutting of the chip and before packaging, and changing the flow direction of current; optimizing the current distribution; and reducing the light absorption of the substrate and improving the light extraction efficiency of the light-emitting diode. By adopting the manufacturing method, the light intensity of the chip can be improved by about 3%-15%.

Description

A kind of manufacture method of AlGaInP light-emitting diode

Technical field

The invention belongs to technical field of semiconductors, relate to a kind of manufacture method of AlGaInP light-emitting diode.

Technical background

LED is the abbreviation of English light emitting diode (light-emitting diode).The chip that its core is made up of P type semiconductor and N type semiconductor has an excessive layer to be called the P-N knot between P type semiconductor and N type semiconductor.The charge carrier compound tense discharges the form of unnecessary energy with light in the P-N of semi-conducting material knot, thereby electric energy is converted to luminous energy.

Quaternary AlGaInP light-emitting diode chip for backlight unit of new generation as a kind of environmental protection, it is a kind of luminescent device of energy-saving and environmental protection, can be used for replacing incandescent lamp and fluorescent lamp, because its stability and reliability is good, be applied in aspects such as outdoor demonstration, illumination widely, but the most light of quaternary AlGaInP light-emitting diode chip for backlight unit is all absorbed by the GaAs substrate, caused the chip light-emitting rate not high, and light extraction efficiency has directly restricted application and the development of LED.

In order to access higher luminous efficiency, most of people adopt following several method: (1) increases the thickness of Window layer; (2) use electric current limitation technology that electric current is not passed through under the zone that electrically contacts; (3) make substrate or use metallic mirror to improve luminous efficiency with transparent, not light absorbing material.But these method complex process, the cost height is not suitable for the making of small size light-emitting diode.

And in " luminous journal " the 30th volume the 2nd phase " simulation of AlGaInP LED light extraction efficiency ", mention, improve external quantum efficiency by optimizing electrode pattern, though manufacture method is simple, but be directed to large-sized chip, external quantum efficiency promotes obviously, and at undersized chip, increases the area of light tight electrode, the light-emitting area of front surface will be reduced, the luminous efficiency of small size chip must be reduced.

Given this, be necessary to provide a kind of suitable arbitrary dimension chip, can improve the method for AlGaInP light-emitting diode light extraction efficiency, its manufacture craft is simple, and cost is low, and external quantum efficiency promotes obviously, especially be fit to the volume production of small size chip.

Summary of the invention

For overcoming above-mentioned defective, the invention provides a kind of manufacture method of AlGaInP light-emitting diode, after epitaxial growth, the electrode making step of AlGaInP light-emitting diode chip for backlight unit are finished, after the chip hemisection, before the encapsulation, chip substrate is increased a sideetching, changed the flow direction of electric current; Optimized CURRENT DISTRIBUTION; And reduced the absorption of substrate, improved the light extraction efficiency of light-emitting diode light.

Technical scheme of the present invention is: a kind of manufacture method of AlGaInP light-emitting diode may further comprise the steps:

Step 1: adopt the contact scribing process with the light-emitting diode chip for backlight unit hemisection, the hemisection degree of depth is 40-60um; Step 2: at light-emitting diode chip for backlight unit back side resist coating, and hot plate is baked to glue and does;

Step 3: configuration ammoniacal liquor corrosive liquid, described ammoniacal liquor corrosive liquid adopts ammoniacal liquor: hydrogen peroxide: the volume ratio of water is configuration in 1: 1: 1 to 1: 5: 1;

Step 4: adopt the gaily decorated basket that the light-emitting diode chip for backlight unit in the step is corroded in the ammoniacal liquor corrosive liquid that configures, etching time is 60-240 second;

Step 5: corrosion back washed with de-ionized water chip;

Step 6: the photoresist of removing chip back;

Step 7: dry up chip with dry nitrogen.

Wherein, described contact scribing process mainly contains several different methods such as saw blade, blade cuts;

The temperature of described ammoniacal liquor corrosive liquid is a normal temperature, and the preferred proportioning of described ammoniacal liquor corrosive liquid is: adopt ammoniacal liquor: hydrogen peroxide: the volume ratio of water is 1: 2: 1;

It is 120 seconds that etching time in the step 4 is preferably.

The invention has the advantages that: this method can keep the original epitaxial structure of light-emitting diode chip for backlight unit, avoids chip impaired, and the substrate of chip is carried out chemical corrosion, can change the flow direction of electric current; Optimize CURRENT DISTRIBUTION; And reduce the absorption of substrate, thereby play the effect of the light extraction efficiency that improves light-emitting diode,, can improve the about 3%-15% of chip light intensity by method of the present invention to light.

Description of drawings

Fig. 1 is corrosion back light-emitting diode side direction structural representation

Wherein 001 is top electrode, and 002 is epitaxial loayer, and 003 is the substrate after the corrosion, and 004 is bottom electrode.

Embodiment

Embodiment 1

Step 1: adopt the contact scribing process that the AlGaInP light-emitting diode chip for backlight unit is carried out hemisection, the hemisection degree of depth is 40-60um;

Step 2: with the even resist coating of chip back, hot plate is baked to glue and does;

Step 3: configuration ammoniacal liquor corrosive liquid, described ammoniacal liquor corrosive liquid adopts ammoniacal liquor: hydrogen peroxide: the volume ratio of water is 1: 2: 1;

Step 4: chip was corroded 60 seconds in this ammoniacal liquor corrosive liquid with the gaily decorated basket;

Step 5: corrosion back deionized water rinsing chip;

Step 6: remove the chip back photoresist;

Step 7: dry up chip with dry nitrogen.

Sample	Brightness mcd (20mA)
		Not corrosion	153.8
Corrosion	158.6

Table 1: the photoelectric properties parameter of chip relatively

With reference to table 1 experimental data, the more uncorroded raising 3.1% of chip light intensity.

Embodiment 2

Step 4: chip was corroded 90 seconds in this ammoniacal liquor corrosive liquid with the gaily decorated basket;

Step 5: corrosion back deionized water rinsing chip;

Step 6: remove the chip back photoresist;

Step 7: dry up chip with dry nitrogen.

Sample	Brightness mcd (20mA)
		Not corrosion	152
Corrosion	165.4

Table 2: the photoelectric properties parameter of chip relatively

With reference to table 2 experimental data, the more uncorroded raising 8.8% of chip light intensity.

Embodiment 3

Step 4: chip was corroded 120 seconds in this ammoniacal liquor corrosive liquid with the gaily decorated basket;

Step 5: corrosion back deionized water rinsing chip;

Step 6: remove the chip back photoresist;

Step 7: dry up chip with dry nitrogen.

Sample	Brightness mcd (20mA)
		Not corrosion	152.7
Corrosion	175

Table 3: the photoelectric properties parameter of chip relatively

With reference to table 3 experimental data, the more uncorroded raising 14.6% of chip light intensity.

Embodiment 4

Step 3: configuration ammoniacal liquor corrosive liquid, described ammoniacal liquor corrosive liquid adopts ammoniacal liquor: hydrogen peroxide: the volume ratio of water is 1: 1: 1;

Step 5: corrosion back deionized water rinsing chip;

Step 6: remove the chip back photoresist;

Step 7: dry up chip with dry nitrogen.

Sample	Brightness mcd (20mA)
		Not corrosion	152.7
Corrosion	172

Table 4: the photoelectric properties parameter of chip relatively

With reference to table 4 experimental data, the more uncorroded raising 12.6% of chip light intensity.

Embodiment 5

Step 3: configuration ammoniacal liquor corrosive liquid, described ammoniacal liquor corrosive liquid adopts ammoniacal liquor: hydrogen peroxide: the volume ratio of water is 1: 5: 1;

Step 4: chip was corroded 240 seconds in this ammoniacal liquor corrosive liquid with the gaily decorated basket;

Step 5: corrosion back deionized water rinsing chip;

Step 6: remove the chip back photoresist;

Step 7: dry up chip with dry nitrogen.

Sample	Brightness mcd (20mA)
		Not corrosion	152.7
Corrosion	170

Table 5: the photoelectric properties parameter of chip relatively

With reference to table 5 experimental data, the more uncorroded raising 11.3% of chip light intensity.

Claims

1. the manufacture method of an AlGaInP light-emitting diode is characterized in that may further comprise the steps:

Step 1: with the light-emitting diode chip for backlight unit hemisection, the hemisection degree of depth is 40-60um;

Step 2: at light-emitting diode chip for backlight unit back side resist coating, and hot plate is baked to glue and does;

Step 5: corrosion back washed with de-ionized water chip;

Step 6: the photoresist of removing chip back;

Step 7: dry up chip with dry nitrogen.

2. the manufacture method of AlGaInP light-emitting diode as claimed in claim 1 is characterized in that: described ammoniacal liquor corrosive liquid adopts ammoniacal liquor: hydrogen peroxide: the volume ratio of water is 1: 2: 1.

3. the manufacture method of AlGaInP light-emitting diode as claimed in claim 1 or 2 is characterized in that: the temperature of described ammoniacal liquor corrosive liquid is a normal temperature.

4. the manufacture method of AlGaInP light-emitting diode as claimed in claim 1 is characterized in that: the etching time described in the step 4 is 120 seconds.