CN101494273A - Light-emitting diode chip and method of manufacturing the same - Google Patents
Light-emitting diode chip and method of manufacturing the same Download PDFInfo
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- CN101494273A CN101494273A CNA2009100468398A CN200910046839A CN101494273A CN 101494273 A CN101494273 A CN 101494273A CN A2009100468398 A CNA2009100468398 A CN A2009100468398A CN 200910046839 A CN200910046839 A CN 200910046839A CN 101494273 A CN101494273 A CN 101494273A
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- emitting diode
- sapphire substrate
- light
- gan layer
- aisle
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 33
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 33
- 239000010980 sapphire Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 32
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000005516 engineering process Methods 0.000 claims abstract description 23
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 18
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 14
- 238000001039 wet etching Methods 0.000 claims abstract description 10
- 230000007797 corrosion Effects 0.000 claims abstract description 8
- 238000005260 corrosion Methods 0.000 claims abstract description 8
- 239000000178 monomer Substances 0.000 claims abstract description 8
- 230000004927 fusion Effects 0.000 claims description 3
- 238000007788 roughening Methods 0.000 abstract 2
- 229910002601 GaN Inorganic materials 0.000 description 35
- 238000010586 diagram Methods 0.000 description 6
- 238000007598 dipping method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
The invention relates to a luminescent diode chip with a roughening lateral wall. The luminescent diode chip comprises a sapphire substrate, an N-type GaN layer, a quantum well, a P-type GaN layer, a transparent electrode, an N electrode and a P electrode. The lateral wall of the chip is roughened to form a round or a cone protruding structure. A method for manufacturing the luminescent diode chip with the roughening lateral wall further comprises the following steps except regular technologies: Step1: Mask technology is adopted, and laser scribing technology, ICP technology or RIE technology are used for etching a formed stack structure so as to form a plurality of stack monomers separated by walkways, wherein, each walkway is deep into the sapphire substrate; Step2: hot phosphoric acid with temperature range of 140DEG C to 300DEG C or fused potassium hydroxide or a potassium hydroxide solution at temperature of 80DEG C to 300DEG C or photochemical corrosion are used for carrying out wet etching to the walkway lateral wall deep into the sapphire substrate for 3min to 30min to cause part of the lateral wall to be roughened, thus forming the round or cone protruding structure. The experimental result shows that the light emission rate of the chip is greatly increased and both the brightness and the milliwatt volume of the chip are improved by over 20 percent compared with conventional technology.
Description
Technical field
The present invention relates to a kind of light-emitting diode chip for backlight unit and manufacture method thereof, particularly a kind of chip sidewall is by the light-emitting diode chip for backlight unit of alligatoring and manufacture method thereof.
Background technology
The new generation of semiconductor material that with GaN is representative has obtained people's extensive concern with characteristics such as its wide direct band gap (Eg=3.4eV), high heat conductance, high rigidity, high chemical stability, low-k, radioresistances, in fields such as solid-state illumination, solid state laser, optical information storage, ultraviolet detectors huge application potential is arranged all.Calculate by China's electricity consumption situation in 2002,, can save the energy output of the three gorges hydropower plant in 1 year, huge economy, environment and social benefit are arranged if adopt solid-state illumination to substitute conventional light source; And according to USDOE's measuring and calculating, by 2010, the whole America semiconductor lighting industry output value will reach 50,000,000,000 dollars.Aspect the optical information storage, can increase substantially optical storage density based on the solid blue light laser of GaN.Just because of these advantages, GaN is placed high hopes.High brightness InGaN/GaN quantum well structure LEDs commercialization.
Usually general led chip manufacturing process is to form N-GaN layer, quantum well layer, and the stack architecture of P-GaN layer etc. earlier on Sapphire Substrate, then described stack architecture is carried out etching to form the storehouse monomer of a plurality of separation, shown in Figure 1A and 1B, each storehouse monomer is separated by the aisle, wherein, the concrete technology of the depth visual in aisle and deciding, usually be no more than N-GaN layer bottom, and then on established storehouse monomer structure, make each electrode, shown in Fig. 1 C, promptly make transparency electrode (ITO)--doing the N/P electrode---be passivation (SiO
2) layer guard electrode (figure does not show)---back of the body attenuate (figure does not show).Certainly also can earlier after producing transparency electrode on the stack architecture, adopt ICP (RIE) to be etched to the N-GaN layer again,, shown in Fig. 1 D, then be N/P electrode-be passivation (SiO again to form corresponding aisle
2) layer guard electrode (figure does not show)---back of the body attenuate (figure does not show).Yet the light-emitting diode that existing technology is produced, its luminosity are difficult to have than quantum jump, therefore, are necessary existing method for manufacturing LED chip is further improved.
Summary of the invention
The technical problem to be solved in the present invention is: a kind of light-emitting diode chip for backlight unit and manufacture method thereof are provided, are used to promote the luminous efficiency of chip, improve the milliwatt number of brightness, increase chip.
In order to solve the problems of the technologies described above, the invention provides a kind of light-emitting diode die, comprise Sapphire Substrate, N type GaN layer, quantum well layer, P type GaN layer, transparency electrode, N electrode and P electrode, the chip sidewall is formed projection by alligatoring.
As one of a preferred embodiment of the present invention, the rounded or taper of described projection.
As one of a preferred embodiment of the present invention, the chip sidewall of described alligatoring comprises N type GaN layer, quantum well layer and P type GaN layer.
The present invention also provides a kind of method of making above-mentioned lobed light-emitting diode die, be included on the Sapphire Substrate form by N-GaN layer, quantum well layer, and the stack architecture formed of P-GaN layer, and on formed stack architecture the step of each electrode of making, this method further may further comprise the steps: step 1, employing mask technique, it is a plurality of by the separated storehouse monomer in aisle to form to use laserscribing, ICP technology or RIE technology that formed stack architecture is carried out etching, wherein, each aisle is deeply to Sapphire Substrate; Step 2, serviceability temperature scope are hot phosphoric acid or the potassium hydroxide of fusion or the potassium hydroxide solution or the photochemical corrosion method of 80 degree-300 degree of 140-300 degree, to the deep wet etching that carries out 3-30 minute to the aisle sidewall of Sapphire Substrate, the sidewall that makes chip is formed circle or taper bulge-structure by alligatoring.
As one of a preferred embodiment of the present invention, described step 1 comprises: step 1) employing mask technique, ICP or RIE carry out etching to formed stack architecture makes the aisle deeply to the N-GaN layer; Step 2) uses laserscribing, ICP technology or RIE technology to the further etching in described aisle, make described aisle further deeply to Sapphire Substrate.
As one of a preferred embodiment of the present invention, Sapphire Substrate 15-50 micron was goed deep in formed aisle after described step 1 was finished.
As one of a preferred embodiment of the present invention, formed aisle is shape wide at the top and narrow at the bottom, and wherein, the part that is in the N-GaN layer is wideer than the part that is in Sapphire Substrate.
As one of a preferred embodiment of the present invention, the preferred depth that is carved into Sapphire Substrate in the step 1 is the 15-20 micron.
As one of a preferred embodiment of the present invention, the preferred depth that is carved into Sapphire Substrate in the step 1 is 20 microns.
As one of a preferred embodiment of the present invention, the temperature preferable range of hot phosphoric acid described in the step 2 is the 145-220 degree, and the preferred time of described wet etching is 3-10 minute.
As a preferred embodiment of the present invention it, the temperature preferable range of hot phosphoric acid described in the step 2 be 145 the degree, the preferred time of described wet etching is 5 minutes.
Light-emitting diode chip for backlight unit provided by the invention and manufacture method thereof can make the brightness of chip and milliwatt number average promote more than 20% than common process chip.
Description of drawings
Figure 1A to Fig. 1 C is the conventional processing procedure schematic diagram of existing light-emitting diode chip for backlight unit.
Fig. 1 D is existing another conventional processing procedure schematic diagram of light-emitting diode chip for backlight unit.
Fig. 2 be LED chip construction schematic diagram provided by the invention (for picture for purpose of brevity, the sidewall alligatoring only is presented at N type GaN layer).
Fig. 3 be light-emitting diode chip for backlight unit processing procedure schematic diagram provided by the invention (for picture for purpose of brevity, the sidewall alligatoring only is presented at N type GaN layer).
Fig. 4 is existing light-emitting diode chip for backlight unit N type GaN layer internal light reflection schematic diagram.
Fig. 5 is a light-emitting diode chip for backlight unit bright dipping schematic diagram provided by the invention.
Embodiment
Further specify preferred embodiment of the present invention below in conjunction with accompanying drawing:
See also Fig. 2, light-emitting diode chip for backlight unit provided by the invention comprises Sapphire Substrate, N type GaN layer (being expressed as N-GaN among the figure), quantum well layer, P type GaN layer (being expressed as P-GaN among the figure), transparency electrode ITO (being expressed as ITO among the figure), P electrode and N electrode.Described sidewall sections is formed projection by alligatoring, and the shape of described projection is good to justify shape or taper.Comprised N type GaN layer, quantum well layer and P type GaN layer by the sidewall of alligatoring.
The manufacture method of above-mentioned light-emitting diode chip for backlight unit below is described.
See also Fig. 3, the manufacture method of above-mentioned lobed light-emitting diode chip for backlight unit may further comprise the steps:
At first on Sapphire Substrate, form by N-GaN layer, quantum well layer, and P-GaN layer etc. form stack architecture.
Then, adopt mask technique, it is a plurality of by the separated storehouse monomer in aisle (all being the storehouse monomer shown in Fig. 3) to form to use laserscribing, ICP technology or RIE technology that formed stack architecture is carried out etching, wherein, each aisle is deeply to Sapphire Substrate 15-50 micron, general preferable depth bounds is the 15-20 micron, and preferred depth is about 20 microns.Must explanatorily be, can be disposable with the deep etching in aisle to Sapphire Substrate, and then be etched to the N-GaN layer and widen aisle first half width, also can adopt mask technique, ICP or RIE that formed stack architecture is carried out etching earlier makes the aisle deeply to the N-GaN layer, and then use laserscribing, ICP technology or RIE technology to the further etching in described aisle, make it further deeply to Sapphire Substrate.Formed aisle can be shape wide at the top and narrow at the bottom behind over etching, and wherein, the part that is in the N-GaN layer is wideer than the part that is in Sapphire Substrate, so that make electrode.
Then, the serviceability temperature scope is hot phosphoric acid or the potassium hydroxide of fusion or the potassium hydroxide solution or the photochemical corrosion method of 80 degree-300 degree of 140-300 degree, to the deep wet etching that carries out 3-30 minute to the aisle sidewall of Sapphire Substrate, the sidewall that makes chip is formed circle or taper bulge-structure by alligatoring.Wherein, the temperature preferable range of described hot phosphoric acid is the 145-220 degree, and the temperature preferable range of described potassium hydroxide solution is the 80-120 degree, and the preferred time of described wet etching is 3-10 minute; And the temperature preferable range of described hot phosphoric acid is 145 degree usually, and the preferred time of described wet etching is 5 minutes.
At last, on lobed structure, make each electrode, for example, make transparency electrode, N/P electrode etc.
Be noted that the sequence of steps of making lobed light-emitting diode chip for backlight unit can adjust accordingly according to the actual production line, for example, can after producing transparency electrode on the stack architecture, carry out etching earlier again; Also can be etched to the N-GaN layer earlier, make the N/P electrode then, the aisle further is etched to use after the Sapphire Substrate hot phosphoric acid corrosion to go out projection again stack architecture; Can also be etched to Sapphire Substrate earlier to stack architecture, adopt hot phosphoric acid corrosion to go out projection then, be etched to the N-GaN layer again and widen the aisle first half to make N/P electrode etc.Through experimental results show that,--it is good adopting the sequence of steps of hot phosphoric acid corrosion--further be etched to the N-GaN layer and widen the aisle first half---the make N/P electrode that goes out projection stack architecture is etched to the N-GaN layer--further be etched to Sapphire Substrate--adopt hot phosphoric acid corrosion go out projection---make N/P electrode, or stack architecture is etched to Sapphire Substrate.
See also Fig. 4 again because the sidewall of conventional chip is vertical, when the photon P that gives off with incidence angle θ
1Arrive first wall w1, after reflection can be with incidence angle θ
2Arrive the second wall w2 (being sidewall), once more can be after the reflection with incidence angle θ
3Arrive the 3rd wall w3, then by incidence angle θ
2=90 °-θ
1, θ
3=θ
1, and for the led chip of gallium nitride material commonly used, its light escape taper critical angle (light escape cone critical angle) is about 23.5 °, and therefore, as long as the incidence angle θ of photon P
1Satisfy condition: 23.5 °＜θ
1In the time of＜66.5 °, it can cause the consumption of energy in chip because of constantly being reflected by each wall, finally can't bright dipping, reduced light extraction efficiency.
See also Fig. 5, arrive second wall, i.e. the photon of sidewall w2 because sidewall by alligatoring, has changed original route, therefore as long as the angle of incident photon perpendicular to sidewall, photon just can be escaped away, the escapement ratio of increase photon promptly, has increased light extraction efficiency.By optimizing the phosphoric acid corrosion technology, find to form convex circle spore or taper projection, bright dipping best results simultaneously when the chip sidewall.
Above-mentioned projection can make the light of chip sidewall take out efficient to be increased more than 1 times, and the brightness of chip and milliwatt number average promote more than 20% than common process chip.
Above embodiment is the unrestricted technical scheme of the present invention in order to explanation only.Any technical scheme that does not break away from spirit and scope of the invention all should be encompassed in the middle of the patent claim of the present invention.
Claims (11)
1, a kind of light-emitting diode die comprises Sapphire Substrate, N type GaN layer, quantum well layer, P type GaN layer, transparency electrode, N electrode and P electrode, and it is characterized in that: the chip sidewall is formed projection by alligatoring.
2, light-emitting diode die as claimed in claim 1 is characterized in that: the rounded or taper of described projection.
3, light-emitting diode die as claimed in claim 1 is characterized in that: the chip sidewall of described alligatoring comprises N type GaN layer, quantum well layer and P type GaN layer.
4, a kind of manufacture method of light-emitting diode die, be included on the Sapphire Substrate form by N-GaN layer, quantum well layer, and the stack architecture formed of P-GaN layer, and on formed stack architecture the step of each electrode of making, the method is characterized in that, further may further comprise the steps:
Step 1, adopt mask technique, it is a plurality of by the separated storehouse monomer in aisle to form to use laserscribing, ICP technology or RIE technology that formed stack architecture is carried out etching, and wherein, each aisle is deeply to Sapphire Substrate;
Step 2, serviceability temperature scope are hot phosphoric acid or the potassium hydroxide of fusion or the potassium hydroxide solution or the photochemical corrosion method of 80 degree-300 degree of 140-300 degree, to the deep wet etching that carries out 3-30 minute to the aisle sidewall of Sapphire Substrate, the sidewall that makes chip is formed circle or taper bulge-structure by alligatoring.
5, the manufacture method of light-emitting diode die as claimed in claim 4 is characterized in that: described step 1 comprises:
Step 1) employing mask technique, ICP or RIE carry out etching to formed stack architecture makes the aisle deeply to the N-GaN layer;
Step 2) uses laserscribing, ICP technology or RIE technology to the further etching in described aisle, make described aisle further deeply to Sapphire Substrate.
6, as the manufacture method of claim 4 or 5 described light-emitting diode dies, it is characterized in that: Sapphire Substrate 15-50 micron was goed deep in formed aisle after described step 1 was finished.
7, as the manufacture method of claim 4 or 5 described light-emitting diode dies, it is characterized in that: formed aisle is shape wide at the top and narrow at the bottom, and wherein, the part that is in the N-GaN layer is wideer than the part that is in Sapphire Substrate.
8, as the manufacture method of claim 4 or 5 described light-emitting diode dies, it is characterized in that: the preferred depth that is carved into Sapphire Substrate in the step 1 is the 15-20 micron.
9, as the manufacture method of claim 4 or 5 described light-emitting diode dies, it is characterized in that: the preferred depth that is carved into Sapphire Substrate in the step 1 is 20 microns.
10, the manufacture method of light-emitting diode die as claimed in claim 4, it is characterized in that: the temperature preferable range of hot phosphoric acid described in the step 2 is the 145-220 degree, the temperature preferable range of described potassium hydroxide solution is the 80-120 degree, and the preferred time of described wet etching is 3-10 minute.
11, as the manufacture method of claim 4 or 10 described light-emitting diode dies, it is characterized in that: the temperature preferable range of hot phosphoric acid described in the step 2 is 145 degree, and the preferred time of described wet etching is 5 minutes.
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| CN2009100468398A CN101494273B (en) | 2009-02-27 | 2009-02-27 | Light-emitting diode chip and method of manufacturing the same |
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| CN2009100468398A CN101494273B (en) | 2009-02-27 | 2009-02-27 | Light-emitting diode chip and method of manufacturing the same |
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| CN101494273A true CN101494273A (en) | 2009-07-29 |
| CN101494273B CN101494273B (en) | 2011-01-19 |
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- 2009-02-27 CN CN2009100468398A patent/CN101494273B/en not_active Expired - Fee Related
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