CN102593301A - Light emitting diode with coarsened side surface and manufacturing method thereof - Google Patents
Light emitting diode with coarsened side surface and manufacturing method thereof Download PDFInfo
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- CN102593301A CN102593301A CN2012100529209A CN201210052920A CN102593301A CN 102593301 A CN102593301 A CN 102593301A CN 2012100529209 A CN2012100529209 A CN 2012100529209A CN 201210052920 A CN201210052920 A CN 201210052920A CN 102593301 A CN102593301 A CN 102593301A
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Abstract
The invention provides a light emitting diode with a coarsened side surface which comprises a substrate whose side surface is subjected to coarsening processing, a nucleation layer which is manufactured on the substrate with the coarsened side surface, an N type doping layer which is manufactured on the nucleation layer and has a bench surface, a multi-quantum well luminescent layer which is manufactured on another side of the N type doping layer bench surface and is gallium nitride/indium gallium nitrogen in 10-period alternative growth, a P type doping layer which is manufactured on the multi-quantum well luminescent layer, an ITO layer which is manufactured on the P type doping layer, a P type metal electrode which is manufactured on the ITO layer, and an N type metal electrode which is manufactured on the bench surface of the doping layer. According to the light emitting diode and the manufacture method of the invention, light extraction efficiency can be raised, light emitting diode external quantum efficiency is raised, and the light emitting diode and the method are especially suitable for manufacture of a large size power type crystal grain.
Description
Technical field
The invention belongs to technical field of semiconductors, be meant the Light-emitting Diode And Its Making Method of a kind of side alligatoring especially.
Background technology
Because light-emitting diode has energy-saving and environmental protection, advantages such as life-span length, after the coming years, light-emitting diode might replace traditional lighting light fixtures such as incandescent lamp, fluorescent lamp, and gets into huge numbers of families.
Fig. 1 be prior art not through the light-emitting diode of side alligatoring, its luminous efficiency is low.
At present, the main heteroepitaxial growth of nitride based light LED material is on substrates such as sapphire, silicon, carborundum.Because the refractive index of gallium nitride material and air exist than big difference, the light total reflection effect escaping and taking place at the interface makes the light extraction of LED device receive very large restriction.T.Fujii, Y.Gao waits the people to propose the extraction efficiency that gallium nitride based light emitting diode surface coarsening technology improves light-emitting diode at Appl.Phys.Lett.84 (2004) 855..After this, surface coarsening is the key technology of the raising light-emitting diode light extraction efficiency used always.But; Surface coarsening technology before mainly concentrates on the side alligatoring of the alligatoring of p type gallium nitride surface, the alligatoring of indium tin oxide transparent conductive layer surface, the alligatoring of the Sapphire Substrate back side, epitaxial layer of gallium nitride etc., and the roughening treatment of light-emitting diode Sapphire Substrate sidewall exiting surface is not related to.In addition, Japanese Hamamatsu Photonics K. K proposed in 2007 low damage laser cutting silicon chip laser processing (application number: 200710147746.5, publication number: CN 101110392A).But it does not mention the influence of the sapphire of gallium nitride light-emitting diode device alligatoring in the face of the light-emitting diode extraction efficiency.
Present technique adopts laser processing technology, and the side of light-emitting diode Sapphire Substrate is handled, and has obtained coarse sapphire side structure, has improved the extraction efficiency of light-emitting diode greatly.Present technique exists remarkable advantages, and technique process is optimized greatly, and production cycle and cost are declined to a great extent.
Summary of the invention
Main purpose of the present invention is to provide a kind of Light-emitting Diode And Its Making Method of side structure; It is in light-emitting diode chip for backlight unit technology is made; Method to the sidewall alligatoring of gallium nitride based light emitting diode substrate; Can improve light extraction efficiency greatly, make LED external quantum efficiency promote, be particularly suitable for the making of large scale power-type crystal grain.
For achieving the above object, the present invention provides the light-emitting diode of a kind of side alligatoring, comprising:
One substrate, the side of this substrate is through roughening treatment;
One nucleating layer, it is produced on the substrate of side alligatoring;
One N type doped layer, it is produced on the nucleating layer, and this N type doped layer has a table top;
One multiple quantum well light emitting layer, it is produced on the opposite side of N type doped layer table top, and this multiple quantum well light emitting layer is the gallium nitride/indium gallium nitrogen of 10 cycle alternating growths;
One P type doped layer, it is produced on the multiple quantum well light emitting layer;
One ITO layer, it is produced on the P type doped layer;
One P type metal electrode, it is produced on the ITO layer;
One N type metal electrode, it is produced on the table top of doped layer.
The present invention provides compared with prior art: having chip technology has only increased proper process in cutting process; Simple to operation; Can improve light extraction efficiency greatly, make LED external quantum efficiency promote, be particularly suitable for the making of large scale power-type crystal grain.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with accompanying drawing and embodiment the present invention is described further, wherein:
Fig. 1 is traditional light-emitting diode structure sketch map;
Fig. 2 is the first embodiment of the present invention, shows the structural representation of side of substrate after alligatoring, and the figure of alligatoring is a triangular structure;
Fig. 3 is the second embodiment of the present invention, shows the structural representation of side of substrate after alligatoring, and the figure of alligatoring is a circular configuration;
Fig. 4 is the third embodiment of the present invention, shows the structural representation of side of substrate after alligatoring, and the figure of alligatoring is a discontinuous construction;
Fig. 5 is the fourth embodiment of the present invention, shows the structural representation of side of substrate after alligatoring, and the figure of alligatoring is a continuous structure;
Fig. 6 is the fifth embodiment of the present invention, shows the structural representation of side of substrate after alligatoring, and the figure of alligatoring is a continuous structure, and substrate is for trapezoidal;
Fig. 7 is the sixth embodiment of the present invention, shows the structural representation of side of substrate after alligatoring, and the figure of alligatoring is a discontinuous construction, and substrate is semicircle or hemisphere;
Embodiment:
See also shown in Figure 2ly, the present invention provides a kind of light-emitting diode of side structure, comprising:
One substrate 21, the side of this substrate 21 are through roughening treatment, and the side of said alligatoring can reduce the total reflection effect of LED device internal light, improve the light extraction efficiency of device.The material of substrate 21 is sapphire, Si, SiC, GaAs or glass, this substrate 21 be shaped as rectangle, trapezoidal, semicircle or hemisphere.The light-emitting diode of side alligatoring, wherein the side of this substrate 21 forms continuous coarse surface or discontinuous coarse surface through roughening treatment.
One nucleating layer 22, it is produced on the substrate 21 of side alligatoring;
One N type doped layer 23, it is produced on the nucleating layer 22, and this N type doped layer 23 has a table top 23 ', and wherein the degree of depth of the table top 23 ' of doped layer 23 is less than the thickness of doped layer 23.
One multiple quantum well light emitting layer 24, it is produced on the opposite side of N type doped layer 23 table tops 23 ', the gallium nitride that this multiple quantum well light emitting layer 24 is 10 cycle alternating growths/indium gallium nitrogen; Wherein the material of nucleating layer 22, N type doped layer 23 and P type doped layer 24 is GaN.
One P type doped layer 25, it is produced on the multiple quantum well light emitting layer 24;
One ITO layer 26, it is produced on the P type doped layer 25, and wherein ITO layer 26 helps current expansion, has improved the injection efficiency of electronics and the internal quantum efficiency of device.
One P type metal electrode 27, it is produced on the ITO layer 26;
One N type metal electrode 28, it is produced on the table top 23 ' of doped layer 23, and the P type metal electrode 27 of preparation and N type metal electrode 28 can be connected with extraneous power supply.
The side of wherein above-mentioned rectangle, trapezoidal, semicircle or hemisphere substrate 21 after roughening treatment, all can be continuous coarse surface or discontinuous coarse surface, and its shape all can be triangle, rhombus, circle or polygon.
Please consult shown in Figure 2ly again, the present invention provides a kind of manufacture method of light-emitting diode of side structure, comprises the steps:
Step 1: get a substrate 21; Roughening treatment is carried out in the side of this substrate 21, forms continuous coarse surface or discontinuous coarse surface, and wherein the material of the substrate 21 of surface coarsening is sapphire, Si, SiC, GaAs or glass; This substrate 21 be shaped as rectangle, trapezoidal, semicircle or hemisphere; Wherein substrate 21 sidewall alligatoring are to induce shape with laser in the sidewall surfaces formation of substrate 21, erode away triangle, rhombus, circle or polygon through corrosive liquid.The side of said alligatoring can reduce the total reflection effect of LED device internal light, improves the light extraction efficiency of device.
Step 2: on substrate 21, adopt the MOCVD method to grow into stratum nucleare 22, N type doped layer 23, multiple quantum well light emitting layer 24, P type doped layer 25 and ITO layer 26 successively; Wherein the material of nucleating layer 22, N type doped layer 23 and P type doped layer 24 is GaN, wherein this multiple quantum well light emitting layer 24 gallium nitride/indium gallium nitrogen that is 10 cycle alternating growths.
Step 3: adopt the method for photoetching, etching under the side direction on the ITO layer 26, etching depth arrives in the N type doped layer 23, forms table top 23 ';
Step 4: at preparation P type metal electrode 27 on the side of etching on the ITO layer 26, at table top 23 ', on prepare N type metal electrode 28, the P type metal electrode 27 of preparation and N type metal electrode 28 can be connected with extraneous power supply.
The side of wherein above-mentioned rectangle, trapezoidal, semicircle or hemisphere substrate 21 after roughening treatment, all can be continuous coarse surface or discontinuous coarse surface, and its shape all can be triangle, rhombus, circle or polygon.
Embodiment 1:
As shown in Figure 2, itself and aforementioned content basically identical, it is the triangular structure that is shaped as that shows substrate 201 side alligatoring.
Embodiment 2:
As shown in Figure 3, itself and aforementioned content basically identical, it is the circular configuration that is shaped as that shows substrate 201 side alligatoring.
Embodiment 3:
As shown in Figure 4, itself and aforementioned content basically identical, it is the discontinuous alligatoring structure that is shaped as that shows substrate 201 side alligatoring.
Embodiment 4:
As shown in Figure 5, itself and aforementioned content basically identical, its be show substrate 201 side alligatoring be shaped as the continuous coarsening structure.
Embodiment 5:
As shown in Figure 6, itself and aforementioned content basically identical, it is the trapezoidal discontinuous alligatoring structure that is shaped as down that shows substrate 201 side alligatoring.
Embodiment 6:
As shown in Figure 7, itself and aforementioned content basically identical, its be show substrate 201 side alligatoring be shaped as circle or the discontinuous alligatoring structure of hemisphere.
Above instance only supplies to explain only usefulness of the present invention, but not limitation of the present invention, those skilled in the art under the situation that does not break away from the spirit and scope of the present invention, can also make various conversion or variation; Therefore, all technical schemes that are equal to also should belong to category of the present invention, should be limited each claim.
Claims (10)
1. the light-emitting diode of a side alligatoring comprises:
One substrate, the side of this substrate are through roughening treatment, and the side of substrate after the roughening treatment is triangle, rhombus, circle or polygon;
One nucleating layer, it is produced on the substrate of side alligatoring;
One N type doped layer, it is produced on the nucleating layer, and this N type doped layer has a table top;
One multiple quantum well light emitting layer, it is produced on the opposite side of N type doped layer table top, and this multiple quantum well light emitting layer is the gallium nitride/indium gallium nitrogen of 10 cycle alternating growths;
One P type doped layer, it is produced on the multiple quantum well light emitting layer;
One ITO layer, it is produced on the P type doped layer;
One P type metal electrode, it is produced on the ITO layer;
One N type metal electrode, it is produced on the table top of doped layer.
2. the light-emitting diode of side according to claim 1 alligatoring, wherein the material of the substrate of surface coarsening is sapphire, Si, SiC, GaAs or glass, this substrate be shaped as rectangle, trapezoidal, semicircle or hemisphere.
3. the light-emitting diode of side structure according to claim 2 wherein after the roughening treatment of the side of this substrate, forms continuous coarse surface or discontinuous coarse surface.
4. the light-emitting diode of side structure according to claim 1, wherein the material of nucleating layer, N type doped layer and P type doped layer is GaN.
5. the light-emitting diode of side structure according to claim 1, wherein the degree of depth of the table top of N type doped layer is less than the thickness of N type doped layer.
6. the manufacture method of the light-emitting diode of a side structure comprises the steps:
Step 1: get a substrate, roughening treatment is carried out in the side of this substrate, forms continuous coarse surface or discontinuous coarse surface;
Step 2: on substrate, adopt the MOCVD method to grow into stratum nucleare, N type doped layer, multiple quantum well light emitting layer, P type doped layer and ITO layer successively;
Step 3: adopt the method for photoetching, etching under the side direction on the ITO layer, etching depth arrives in the N type doped layer, forms table top;
Step 4: do not preparing P type metal electrode on the side of etching on the ITO layer;
Step 5: preparation N type metal electrode on table top.
7. the manufacture method of the light-emitting diode of side structure according to claim 6, wherein the material of the substrate of surface coarsening is sapphire, Si, SiC, GaAs or glass, this substrate be shaped as rectangle, trapezoidal, semicircle or hemisphere.
8. the manufacture method of the light-emitting diode of side structure according to claim 6, wherein the material of nucleating layer, N type doped layer and P type doped layer is GaN.
9. the manufacture method of the light-emitting diode of side structure according to claim 6, wherein this multiple quantum well light emitting layer is the gallium nitride/indium gallium nitrogen of 10 cycle alternating growths.
10. the manufacture method of the light-emitting diode of side structure according to claim 6, wherein substrate sidewall alligatoring is to form in the sidewall surfaces of substrate with laser to induce shape, erodes away triangle, rhombus, circle or polygon through corrosive liquid.
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Cited By (9)
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| CN102903815A (en) * | 2012-10-09 | 2013-01-30 | 中国科学院半导体研究所 | Inverted light-emitting diode with coarsened side surface and manufacturing method of inverted light-emitting diode |
| CN102969422A (en) * | 2012-12-17 | 2013-03-13 | 中国科学院半导体研究所 | Manufacturing method of LED (Light Emitted Diode) with high light transmittance and inverted structure |
| CN103794691A (en) * | 2012-10-30 | 2014-05-14 | 首尔伟傲世有限公司 | Light emitting diode and method of fabricating the same |
| CN103904181A (en) * | 2012-12-26 | 2014-07-02 | 新世纪光电股份有限公司 | Light-emitting element |
| CN107078187A (en) * | 2014-11-07 | 2017-08-18 | 信越半导体株式会社 | The manufacture method of luminescence component and luminescence component |
| CN107393822A (en) * | 2017-07-17 | 2017-11-24 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of manufacture method suppressed with transient voltage with the glassivation fly-wheel diode of rectification function |
| US10050173B2 (en) | 2015-02-17 | 2018-08-14 | Genesis Photonics Inc. | Light emitting device comprising micro-structures |
| CN110491976A (en) * | 2019-08-22 | 2019-11-22 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips of resistant to hydrolysis and preparation method thereof |
| CN113192883A (en) * | 2021-04-20 | 2021-07-30 | 天津三安光电有限公司 | Infrared light-emitting diode and preparation method thereof |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102903815A (en) * | 2012-10-09 | 2013-01-30 | 中国科学院半导体研究所 | Inverted light-emitting diode with coarsened side surface and manufacturing method of inverted light-emitting diode |
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| CN102969422A (en) * | 2012-12-17 | 2013-03-13 | 中国科学院半导体研究所 | Manufacturing method of LED (Light Emitted Diode) with high light transmittance and inverted structure |
| CN102969422B (en) * | 2012-12-17 | 2015-03-04 | 中国科学院半导体研究所 | Manufacturing method of LED (Light Emitted Diode) with high light transmittance and inverted structure |
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| CN107078187B (en) * | 2014-11-07 | 2019-10-25 | 信越半导体株式会社 | The manufacturing method of luminescence component and luminescence component |
| US10050173B2 (en) | 2015-02-17 | 2018-08-14 | Genesis Photonics Inc. | Light emitting device comprising micro-structures |
| CN107393822A (en) * | 2017-07-17 | 2017-11-24 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of manufacture method suppressed with transient voltage with the glassivation fly-wheel diode of rectification function |
| CN110491976A (en) * | 2019-08-22 | 2019-11-22 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips of resistant to hydrolysis and preparation method thereof |
| CN113192883A (en) * | 2021-04-20 | 2021-07-30 | 天津三安光电有限公司 | Infrared light-emitting diode and preparation method thereof |
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Application publication date: 20120718 |