CN102903815A - Inverted light-emitting diode with coarsened side surface and manufacturing method of inverted light-emitting diode - Google Patents
Inverted light-emitting diode with coarsened side surface and manufacturing method of inverted light-emitting diode Download PDFInfo
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- CN102903815A CN102903815A CN2012103805535A CN201210380553A CN102903815A CN 102903815 A CN102903815 A CN 102903815A CN 2012103805535 A CN2012103805535 A CN 2012103805535A CN 201210380553 A CN201210380553 A CN 201210380553A CN 102903815 A CN102903815 A CN 102903815A
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Abstract
The invention provides an inverted light-emitting diode with a coarsened side surface and a manufacturing method of the inverted light-emitting diode. The inverted light-emitting diode with the coarsened side surface comprises an upper substrate, a nucleating layer, an electronic injection layer, a luminous layer, a cavity injection layer, a P electrode, an N electrode, a lower substrate, an insulating layer, a P line electrode and an N line electrode, wherein the nucleating layer and the electronic injection layer are sequentially grown on the upper substrate; a table board is formed on one side of the electronic injection layer; the luminous layer is grown on the electronic injection layer; the cavity injection layer is grown on the luminous layer; the P electrode is manufactured on the cavity injection layer; the N electrode is manufactured on the table board of the electronic injection layer to form a light-emitting diode (LED) chip; the insulating layer is grown on the lower substrate; the P line electrode is manufactured on one side of the insulating layer; the N line electrode is manufactured on the other side of the insulating layer, so that an inverted base plate is formed; the P electrode of the LED chip is connected with the P line electrode of the inverted base plate through a metal solder ball; and the N electrode of the LED chip is connected with the N line electrode of the inverted base plate through a metal solder ball. The luminous efficiency can be greatly improved, so that the external quantum efficiency of the light-emitting diode is improved; and the inverted light-emitting diode is particularly suitable for manufacturing large-size power type crystalline grains.
Description
Technical field
The invention belongs to technical field of semiconductors, refer to especially inverted light-emitting diode (LED) of a kind of side alligatoring and preparation method thereof.
Background technology
Because light-emitting diode has energy-saving and environmental protection, the advantages such as life-span length, after the coming years, light-emitting diode might replace the traditional lighting light fixtures such as incandescent lamp, fluorescent lamp, and enters huge numbers of families.
At present, the formal dress structure chip of traditional light-emitting diode, electrode is positioned on the exiting surface of chip, and because the poor electric conductivity of p-GaN layer, generally must introduce on p-GaN layer surface current extending, and current extending and electrode all can the absorbent portion light splitting and reduce the light efficiency of light-emitting diode.While is owing to the poor radiation of positive assembling structure, and it is integrated to be difficult to the realization multi-chip.In order to overcome these deficiencies of positive cartridge chip, flip-chip has been invented by U.S. Lumileds company.But because also there are a certain distance in refractive index and the air of backing material, in the light total reflection effect of escaping and occuring at the interface, so that extracting, the light of LED device is subject to very large restriction.T.Fujii, the people such as Y.Gao have proposed the extraction efficiency that gallium nitride based light emitting diode surface coarsening technology improves light-emitting diode at Appl.Phys.Lett.84 (2004) 855..After this, surface coarsening is the key technology of the raising light-emitting diode light extraction efficiency commonly used.But, surface coarsening technology before mainly concentrates on the side alligatoring of the alligatoring of p-type gallium nitride surface, the alligatoring of indium tin oxide transparent conductive layer surface, the alligatoring of the Sapphire Substrate back side, epitaxial layer of gallium nitride etc., does not relate to the roughening treatment to light-emitting diode Sapphire Substrate sidewall exiting surface.
Present technique adopts laser processing technology, and the side of inverted light-emitting diode (LED) Sapphire Substrate is processed, and has obtained coarse sapphire side structure, has greatly improved the extraction efficiency of light-emitting diode.Present technique exists obvious advantage, and technique process is optimized greatly, and production cycle and cost are declined to a great extent.
Summary of the invention
Inverted light-emitting diode (LED) that provides the alligatoring of a kind of side and preparation method thereof is provided main purpose of the present invention, it is in light-emitting diode chip for backlight unit technique is made, method to the sidewall alligatoring of gallium nitride based light emitting diode substrate, can greatly improve light extraction efficiency, so that LED external quantum efficiency promotes, be particularly suitable for the making of large scale power-type crystal grain.
For achieving the above object, the invention provides the inverted light-emitting diode (LED) of a kind of side alligatoring, comprising:
Substrate and successively at a nucleating layer and the electron injecting layer of Grown on one, a side of this electron injecting layer forms a table top;
One luminescent layer, this luminescent layer is grown on the electron injecting layer;
One hole injection layer, this hole injection layer is grown on the luminescent layer;
One P electrode, this P electrode fabrication is on hole injection layer;
One N electrode, this N electrode fabrication form led chip on the table top of electron injecting layer;
Substrate once;
One insulating barrier, this insulating barrier are grown on the lower substrate;
One P line electrode, this P line electrode is produced on the side above the insulating barrier;
One N line electrode, this N line electrode is produced on the opposite side above the insulating barrier, forms flip-chip substrate;
The P electrode of this led chip is connected by the metal soldered ball with the P line electrode of flip-chip substrate; The N electrode of this led chip is connected by the metal soldered ball with the N line electrode of flip-chip substrate.
The present invention also provides the manufacture method of the inverted light-emitting diode (LED) of a kind of side alligatoring, comprises the steps:
Step 1: roughening treatment is carried out in the side of substrate on one, forms continuous coarse surface or discontinuous coarse surface;
Step 2: adopt the MOCVD method to grow into successively stratum nucleare, electron injecting layer, luminescent layer and hole injection layer at upper substrate;
Step 3: etching under the side direction on hole injection layer, etching depth arrive in the electron injecting layer, form table top;
Step 4: a side of etching is not made the P electrode on hole injection layer;
Step 5: at the table top preparation N of electron injecting layer electrode, form led chip;
Step 6: at Grown one layer insulating once;
Step 7: make P line electrode and N line electrode at insulating barrier, form flip-chip substrate;
Step 8: on flip-chip substrate, the P electrode of described led chip is connected by the metal soldered ball with the P line electrode of flip-chip substrate with the method upside-down mounting of led chip by flip chip bonding or bonding; The N electrode of this led chip is connected by the metal soldered ball with the N line electrode of flip-chip substrate, finishes preparation.
The invention provides compared with prior art: having chip technology has only increased suitable processing in cutting process, simple to operation, can greatly improve light extraction efficiency, so that LED external quantum efficiency promotes, be particularly suitable for the making of large scale power-type crystal grain.
Description of drawings
For further specifying technology contents of the present invention, the invention will be further described below in conjunction with drawings and Examples, wherein:
Fig. 1 is the structural representation of the first embodiment of the present invention, and the figure of side of substrate after alligatoring is triangular structure in the demonstration;
Fig. 2 is the second embodiment of the present invention, and the figure of side of substrate is circular configuration in the demonstration;
Fig. 3 is the third embodiment of the present invention, and the figure of side of substrate is discontinuous construction in the demonstration;
Fig. 4 is the fourth embodiment of the present invention, and the figure of side of substrate is continuous structure in the demonstration;
Fig. 5 is the fifth embodiment of the present invention, and the figure of side of substrate is continuous structure in the demonstration, and substrate is inverted trapezoidal;
Fig. 6 is the sixth embodiment of the present invention, and the figure of side of substrate is discontinuous construction in the demonstration, and upper substrate is semicircle or hemisphere;
Fig. 7 is preparation flow figure of the present invention.
Embodiment
See also shown in Figure 1ly, the invention provides the inverted light-emitting diode (LED) of a kind of side alligatoring, comprising:
One luminescent layer 14, this luminescent layer 14 is grown on the electron injecting layer 13, and described luminescent layer is multi-quantum pit structure;
One hole injection layer 15, this hole injection layer 15 is grown on the luminescent layer 14, and wherein the material of nucleating layer 12, electron injecting layer 13, luminescent layer 14 and hole injection layer 15 is GaN;
One P electrode 16, this P electrode 16 is produced on the hole injection layer 15, and described P electrode is selected from and comprises nickel (Ni)/silver (Ag)/platinum (Pt)/gold (Au), nickel (Ni)/silver (Ag)/gold (Au), nickel (Ni)/silver (Ag)/nickel (Ni)/gold (Au), titanium (Ti)/aluminium (Al)/titanium (Ti)/gold (Au), titanium (Ti)/silver (Ag)/titanium (Ti)/gold (Au), aluminium (Al)/silver (Ag)/gold (Au), a kind of material in aluminium (Al)/titanium (Ti)/gold metallic mirror material groups such as (Au);
One N electrode 17, this N electrode 17 are produced on the table top 131 of electron injecting layer 13, form led chip 100;
Once substrate 23, and the material of described lower substrate 23 is silicon chip, pottery, wiring board or metallic plate, its perfect heat-dissipating, and realize that easily multi-chip is integrated;
One insulating barrier 22, this insulating barrier 22 is silicon dioxide layer or silicon nitride layer, prevents short circuit between P line electrode 20 and the N line electrode 21, is grown on the lower substrate 23;
One P line electrode 20, this P line electrode 20 are produced on the side above the insulating barrier 22;
One N line electrode 21, this N line electrode 21 are produced on the opposite side above the insulating barrier 22, form flip-chip substrate 200;
The P electrode 16 of this led chip 100 is connected by metal soldered ball 18 with the P line electrode 20 of flip-chip substrate 200; The N electrode 17 of this led chip 100 is connected by metal soldered ball 18 with the N line electrode 21 of flip-chip substrate 200.
Consulting Fig. 2 is the second embodiment of the present invention, and the figure of side of substrate is circular configuration in the demonstration.
Consulting Fig. 3 is the third embodiment of the present invention, and the figure of side of substrate is discontinuous construction in the demonstration.
Consulting Fig. 4 is the fourth embodiment of the present invention, and the figure of side of substrate is continuous structure in the demonstration.
Consulting Fig. 5 is the fifth embodiment of the present invention, and the figure of side of substrate is continuous structure in the demonstration, and substrate is inverted trapezoidal.
Consulting Fig. 6 is the sixth embodiment of the present invention, and the figure of side of substrate is discontinuous construction in the demonstration, and upper substrate is semicircle or hemisphere.
See also figure Fig. 7, and shown in Figure 1 in conjunction with consulting.The present invention also provides the manufacture method of the inverted light-emitting diode (LED) of a kind of side alligatoring, comprises the steps:
Step 1: roughening treatment is carried out in the side of substrate 11 on one, form continuous coarse surface or discontinuous coarse surface, the side alligatoring of described upper substrate 11, to induce shape with laser in the side surface formation of upper substrate 11, erode away triangle (consulting Fig. 1) through corrosive liquid, circular (consulting Fig. 2), rhombus or polygonal coarse surface, described coarse surface is continuous coarse surface (consulting Fig. 4) or discontinuous coarse surface (consulting Fig. 3), the material of upper substrate 11 is sapphire, Si, SiC, GaAs or glass, substrate 11 is shaped as rectangle on this, trapezoidal (consulting Fig. 5), semicircle or hemisphere (consulting Fig. 6);
Step 2: adopt the MOCVD method to grow into successively stratum nucleare 12, electron injecting layer 13, luminescent layer 14 and hole injection layer 15 at upper substrate 11, the material of described nucleating layer 12, electron injecting layer 13, luminescent layer 14 and hole injection layer 15 is GaN;
Step 3: the side on hole injection layer 15 utilizes inductive couple plasma ICP to carry out dry etching, and etching depth arrives in the electron injecting layer 13, forms table top 131, and the degree of depth of the table top 131 of described electron injecting layer 13 is less than the thickness of electron injecting layer 13;
Step 4: a side of etching is not made P electrode 16 on hole injection layer 15, and described P electrode is selected from and comprises nickel (Ni)/silver (Ag)/platinum (Pt)/gold (Au), nickel (Ni)/silver (Ag)/gold (Au), nickel (Ni)/silver (Ag)/nickel (Ni)/gold (Au), titanium (Ti)/aluminium (Al)/titanium (Ti)/gold (Au), titanium (Ti)/silver (Ag)/titanium (Ti)/gold (Au), aluminium (Al)/silver (Ag)/gold (Au), a kind of material in aluminium (Al)/titanium (Ti)/gold metallic mirror material groups such as (Au);
Step 5: the table top 131 preparation N electrodes 17 at electron injecting layer 13 form led chip 100;
Step 6: at one layer insulating 22 of substrate 23 growths once, this insulating barrier 22 is silicon dioxide layer or silicon nitride layer, prevent short circuit between P line electrode 20 and the N line electrode 21, the material of described lower substrate 23 is silicon chip, pottery, wiring board or metallic plate, described material perfect heat-dissipating, and be easy to realize that multi-chip is integrated;
Step 7: make P line electrode 20 and N line electrode 21 at insulating barrier 22, form flip-chip substrate 200;
Step 8: on flip-chip substrate 200, the P electrode 16 of described led chip 100 is connected by metal soldered ball 18 with the P line electrode 20 of flip-chip substrate 200 with the led chip 100 method upside-down mounting by flip chip bonding or bonding; The N electrode 17 of this led chip 100 is connected by metal soldered ball 18 with the N line electrode 21 of flip-chip substrate 200, finishes preparation.
Above example only for explanation the present invention only, but not limitation of the present invention, those skilled in the art in the situation that does not break away from the spirit and scope of the present invention, can also make various conversion or variation; Therefore, all technical schemes that are equal to also should belong to category of the present invention, should be limited by each claim.
Claims (10)
1. the inverted light-emitting diode (LED) of a side alligatoring comprises:
Substrate and successively at a nucleating layer and the electron injecting layer of upper Grown on one, a side of this electron injecting layer forms a table top;
One luminescent layer, this luminescent layer is grown on the electron injecting layer;
One hole injection layer, this hole injection layer is grown on the luminescent layer;
One P electrode, this P electrode fabrication is on hole injection layer;
One N electrode, this N electrode fabrication form led chip on the table top of electron injecting layer;
Substrate once;
One insulating barrier, this insulating barrier are grown on the lower substrate;
One P line electrode, this P line electrode is produced on the side above the insulating barrier;
One N line electrode, this N line electrode is produced on the opposite side above the insulating barrier, forms flip-chip substrate;
The P electrode of this led chip is connected by the metal soldered ball with the P line electrode of flip-chip substrate; The N electrode of this led chip is connected by the metal soldered ball with the N line electrode of flip-chip substrate.
2. the inverted light-emitting diode (LED) of side alligatoring according to claim 1, the side of wherein going up substrate is continuous coarse surface or discontinuous coarse surface.
3. the inverted light-emitting diode (LED) of side alligatoring according to claim 2, the material of wherein going up substrate is sapphire, Si, SiC, GaAs or glass, substrate is shaped as rectangle, trapezoidal, semicircle or hemisphere on this.
4. the inverted light-emitting diode (LED) of side alligatoring according to claim 1, the material that wherein descends substrate is silicon chip, pottery, wiring board or metallic plate.
5. the inverted light-emitting diode (LED) of side alligatoring according to claim 1, the degree of depth of the table top of wherein said electron injecting layer is less than the thickness of electron injecting layer.
6. the manufacture method of the inverted light-emitting diode (LED) of a side alligatoring comprises the steps:
Step 1: roughening treatment is carried out in the side of substrate on one, forms continuous coarse surface or discontinuous coarse surface;
Step 2: adopt the MOCVD method to grow into successively stratum nucleare, electron injecting layer, luminescent layer and hole injection layer at upper substrate;
Step 3: etching under the side direction on hole injection layer, etching depth arrive in the electron injecting layer, form table top;
Step 4: a side of etching is not made the P electrode on hole injection layer;
Step 5: at the table top preparation N of electron injecting layer electrode, form led chip;
Step 6: at Grown one layer insulating once;
Step 7: make P line electrode and N line electrode at insulating barrier, form flip-chip substrate;
Step 8: on flip-chip substrate, the P electrode of described led chip is connected by the metal soldered ball with the P line electrode of flip-chip substrate with the method upside-down mounting of led chip by flip chip bonding or bonding; The N electrode of this led chip is connected by the metal soldered ball with the N line electrode of flip-chip substrate, finishes preparation.
7. the manufacture method of the inverted light-emitting diode (LED) of side alligatoring according to claim 6, the degree of depth of the table top of wherein said electron injecting layer is less than the thickness of electron injecting layer.
8. the manufacture method of the inverted light-emitting diode (LED) of side alligatoring according to claim 6, the material of wherein said lower substrate is silicon chip, pottery, wiring board or metallic plate.
9. the manufacture method of the inverted light-emitting diode (LED) of side structure according to claim 6, the side alligatoring of wherein said upper substrate, to induce shape with laser in the side surface formation of upper substrate, erode away triangle, rhombus, circle or polygonal coarse surface through corrosive liquid, described coarse surface is continuous coarse surface or discontinuous coarse surface.
10. the manufacture method of the inverted light-emitting diode (LED) of side alligatoring according to claim 9, the material of wherein going up substrate is sapphire, Si, SiC, GaAs or glass, substrate is shaped as rectangle, trapezoidal, semicircle or hemisphere on this.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112968092A (en) * | 2020-11-19 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Light emitting device, manufacturing method thereof and display panel with light emitting device |
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| CN101859828A (en) * | 2009-04-07 | 2010-10-13 | 裕星企业有限公司 | Manufacturing method of light-emitting diode (LED) |
| CN201773864U (en) * | 2010-09-08 | 2011-03-23 | 厦门市三安光电科技有限公司 | Gallium nitride inverted light-emitting diode having high reflector |
| CN102593301A (en) * | 2012-03-02 | 2012-07-18 | 中国科学院半导体研究所 | Light emitting diode with coarsened side surface and manufacturing method thereof |
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- 2012-10-09 CN CN2012103805535A patent/CN102903815A/en active Pending
Patent Citations (7)
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| US20020125485A1 (en) * | 1999-12-22 | 2002-09-12 | Lumileds Lighting U.S. Llc | Semiconductor light emitting device and method |
| CN1731592A (en) * | 2005-08-26 | 2006-02-08 | 杭州士兰明芯科技有限公司 | Flip-chip bonded structure light-emitting diode and its manufacture method |
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| CN112968092A (en) * | 2020-11-19 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Light emitting device, manufacturing method thereof and display panel with light emitting device |
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