CN102969413A

CN102969413A - Manufacturing method of laser-induced air-gap light emitted diode

Info

Publication number: CN102969413A
Application number: CN2012105484647A
Authority: CN
Inventors: 谢海忠; 张逸韵; 鲁志远; 杨华; 李璟; 伊晓燕; 王军喜; 王国宏; 李晋闽
Original assignee: Institute of Semiconductors of CAS
Current assignee: Institute of Semiconductors of CAS
Priority date: 2012-12-17
Filing date: 2012-12-17
Publication date: 2013-03-13
Anticipated expiration: 2032-12-17
Also published as: CN102969413B

Abstract

The invention discloses a manufacturing method of a laser-induced air-gap light emitted diode. The manufacturing method comprises the following steps of: 1) manufacturing a substrate, and forming regular reticular air gaps in the interior (which are 30 micrometers away from the upper surface of the substrate) of the substrate through a laser emitter; 2) sequentially growing a nucleating layer, an N-type doped layer, a multi-quantum well emitting layer, a P-type doped layer and an ITO (Indium Tin Oxide) layer on the substrate by adopting an MOCVD (Metal Organic Chemical Vapour Deposition) process; 3) photo-etching one side of the ITO layer downwards till reaching the interior of the N-type doped layer, so that a table surface is formed; 4) manufacturing a P-type electrode at the non-etched side of the ITO layer; and 5) manufacturing an N-type electrode on the table surface.

Description

The manufacture method of induced with laser air-gap light-emitting diode

Technical field

The invention belongs to technical field of semiconductors, refer to especially a kind of manufacture method of induced with laser air-gap light-emitting diode.

Background technology

Because light-emitting diode has energy-saving and environmental protection, the advantages such as life-span length, after the coming years, light-emitting diode might replace the traditional lighting light fixtures such as incandescent lamp, fluorescent lamp, and enters huge numbers of families.

At present, the main heteroepitaxial growth of nitride based light LED material is on the substrates such as sapphire, silicon, carborundum.Because the refractive index of gallium nitride material and air exist than big difference, in the light total reflection effect of escaping and occuring at the interface, so that extracting, the light of LED device is subject to very large restriction.T.Fujii, Y.Gao waits the people to propose the extraction efficiency that gallium nitride based light emitting diode surface coarsening technology improves light-emitting diode at Appl.Phys.Lett.84 (2004) 855..After this, surface coarsening is the key technology of the raising light-emitting diode light extraction efficiency commonly used.But, surface coarsening technology before mainly concentrates on the side alligatoring of the alligatoring of p-type gallium nitride surface, the alligatoring of indium tin oxide transparent conductive layer surface, the alligatoring of the Sapphire Substrate back side, epitaxial layer of gallium nitride etc., and the roughening treatment of light-emitting diode Sapphire Substrate sidewall exiting surface is not related to.In addition, Japanese Hamamatsu Photonics K. K proposed in 2007 low damage laser cutting silicon chip laser processing (application number: 200710147746.5, publication number: CN101110392A).But it does not mention that the sapphire of gallium nitride light-emitting diode device alligatoring is in the face of the impact of light-emitting diode extraction efficiency.

Present technique adopts laser processing technology, at the inner scanning of light-emitting diode Sapphire Substrate, has obtained crisscross air-gap, and the light that light-emitting diode is sent changes in the air-gap light path, has greatly improved the extraction efficiency of light-emitting diode.Present technique exists obvious advantage, and technique process is optimized greatly, and production cycle and cost are declined to a great extent.

Summary of the invention

Main purpose of the present invention is to provide a kind of manufacture method of induced with laser air-gap light-emitting diode, it is in light-emitting diode chip for backlight unit technique is made, inner scanning in the light-emitting diode Sapphire Substrate, obtained crisscross air-gap, the light that light-emitting diode is sent changes in the air-gap light path, has greatly improved the extraction efficiency of light-emitting diode.So that LED external quantum efficiency promotes, be particularly suitable for the making of large scale power-type crystal grain.

For achieving the above object, the invention provides a kind of manufacture method of induced with laser air-gap light-emitting diode, comprise the steps:

Step 1: get a substrate, adopt laser at the netted air-gap of inside formation rule of distance substrate top surface 30um;

Step 2: adopt the MOCVD method to grow into successively stratum nucleare, N-type doped layer, multiple quantum well light emitting layer, P type doped layer and ITO layer at substrate;

Step 3: adopt the method for photoetching, etching under the side direction on the ITO layer, etching depth arrives in the N-type doped layer, forms table top;

Step 4: a side of etching does not prepare P type electrode on the ITO layer;

Step 5: at table top preparation N-type electrode.

The invention provides compared with prior art: having chip technology has only increased suitable processing in cutting process, simple to operation, can greatly improve light extraction efficiency, so that LED external quantum efficiency promotes, be particularly suitable for the making of large scale power-type crystal grain.

Description of drawings

For further specifying concrete technology contents of the present invention, be described in detail as follows below in conjunction with embodiment and accompanying drawing, wherein:

Fig. 1 is section of structure of the present invention.

Embodiment

See also shown in Figure 1ly, the invention provides the manufacture method of induced with laser air-gap light-emitting diode, comprise the steps:

Step 1: get a substrate 21, the material of substrate 21 is sapphire, Si, SiC, GaAs or glass, adopts laser at the netted air-gap of inside formation rule of distance substrate 21 upper surface 30um.Wherein the inside of this substrate 21 is by laser action, air-gap formation rule or irregular; Air-gap width 100nm-5um, air-gap length 500nm-5um, between air-gap from being 3um-10um.Wherein the air-gap of this substrate 21 is that individual layer or multilayer are arranged;

Wherein this laser can be nanosecond laser, picosecond laser or femto-second laser.Optical maser wavelength can be 266nm, 355nm, 532nm or 1064nm.

Step 2: adopt the MOCVD method to grow successively at substrate 21: nucleating layer 22, N-shaped doped layer 23, the material of this N-shaped doped layer 23 are n-GaN, and N-shaped GaN adopts Si to mix, and thickness is 1-5um.The material of multiple quantum well light emitting layer 24 is InGaN/GaN, and thickness is 50-500nm, wherein the periodicity of multiple quantum well light emitting layer 24 is 1-100.The material of P type doped layer 25 is p-type GaN, and it is to adopt Mg to mix, and thickness is 200-500nm.The material of ITO layer 26 is 95% InO ₂, 5%SnO ₂, thickness is 10-1000nm.

Step 3: adopt the method for photoetching, etching under the side direction on the ITO layer 26, etching depth arrives in the N-type doped layer 23, forms table top 23 '; Etching depth can not penetrate N-type doped layer 23, and the degree of depth is to the centre of N-type doped layer 23 thickness.

Step 4: a side of etching does not prepare P type electrode 27 on ITO layer 26; The material of P type electrode is Cr/Pt/Au, and thickness is:

Step 5: at table top 23 ' preparation N-type electrode 28.The N-type electrode material is Cr/Pt/Au, and thickness is:

The above; only be embodiments of the invention; be not that the present invention is done any pro forma restriction; every any simple modification, equivalent variations and modification of above embodiment being done according to the technology of the present invention essence; all still belong within the technical solution of the present invention scope, so protection scope of the present invention is when being as the criterion with claims.

Claims

1. the manufacture method of an induced with laser air-gap light-emitting diode comprises the steps:

Step 4: a side of etching does not prepare P type electrode on the ITO layer;

Step 5: at table top preparation N-type electrode.

2. the manufacture method of induced with laser air-gap light-emitting diode according to claim 1, wherein the material of the horizontal photon crystalline substrates in side is sapphire, Si, SiC, GaAs or glass.

3. the manufacture method of induced with laser air-gap light-emitting diode according to claim 1, wherein the inside of this substrate is by laser action, air-gap formation rule or irregular; Air-gap width 100nm-5um, air-gap length 500nm-5um, between air-gap from being 3um-10um.

4. the manufacture method of induced with laser air-gap light-emitting diode according to claim 1, wherein the air-gap of this substrate is that individual layer or multilayer are arranged.

5. the manufacture method of induced with laser air-gap light-emitting diode according to claim 1, wherein this laser is nanosecond laser, picosecond laser or femto-second laser, optical maser wavelength is 266nm, 355nm, 532nm or 1064nm.