CN102376827A - Preparation method of AlGaInp light-emitting diode - Google Patents
Preparation method of AlGaInp light-emitting diode Download PDFInfo
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- CN102376827A CN102376827A CN2010102536778A CN201010253677A CN102376827A CN 102376827 A CN102376827 A CN 102376827A CN 2010102536778 A CN2010102536778 A CN 2010102536778A CN 201010253677 A CN201010253677 A CN 201010253677A CN 102376827 A CN102376827 A CN 102376827A
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Abstract
The invention relates to a preparation method of an AlGaInp light-emitting diode. The AlGaInp light-emitting diode is prepared by half cutting a light-emitting diode chip through a corrosion method. The preparation method comprises the following technology steps of: half cutting the light-emitting diode chip, wherein the half-cutting depth is 40-60mu m; placing the half-cut light-emitting diode chip on a vacuum sucker with a size of 2 cun, and vacuumizing; corroding the surface of the chip by using a corrosion solution; after 20-120 seconds, turning on uniform-speed rotation equipment to throw away the corrosion solution, and washing with water; and drying by using a nitrogen gun. The corrosion solution is a mixture of ammonia water, hydrogen peroxide and ion-free solution (with a volume ratio of 1:(2-5):1), or a sodium hypochlorite solution (a ratio of sodium hypochlorite to water is 1:(15-20)). The corrosion is carried out for 1-2 times. Through a wet corrosion method, the preparation method is applicable to light-emitting diode chips with random sizes, so that the luminance is obviously increased and can be up to 12-35%, and the repeatability is good. Furthermore, the preparation method provided by the invention has the advantages of simple equipment, simple technology and low cost, and is particularly suitable for the mass production of small-size chips.
Description
Technical field
The present invention relates to the preparation method of light-emitting diode, belong to technical field of semiconductor device.
Technical background
The solid-state illumination technology is the great technology that has the Industrial Revolution meaning in 21st century; Worldwide; From the government to the enterprise, all caused very big concern, the application of semiconductor light emitting diode device to the effect that in Lighting Industry of solid-state illumination technology.Ultra-high brightness LED can cover whole limit of visible spectrum; The AlGaInP light-emitting diode has broad application prospects in fields such as RGB white light source, panchromatic demonstration, traffic lights, city lighting engineerings in yellowish green, orange, orange red, red wave band superior performance.
The luminous efficiency that improves light-emitting diode is the target of technology pursue always; Through improving the quality of epitaxial material; Reduce the absorption of gallium arsenide substrate through distributed bragg reflector to light; The bonding of transparent substrates and thick current extending, these all have good effect to the light extraction efficiency that improves light-emitting diode.
In order to access higher luminous efficiency, most of people adopt following several method: (1) increases the thickness of Window layer; (2) use electric current limitation technology that electric current is not passed through under the zone that electrically contacts; (3) make substrate or use metallic mirror to improve luminous efficiency with transparent, not light absorbing material.But these method complex process, cost is high, is not suitable for the making of small size light-emitting diode.
Mentioned use NaClO corrosive liquid to the GaP surface of chip and the method for side alligatoring at Chinese patent CN101540363A; But this method must be carried out on the crystal grain after cutting thoroughly; Equipment and complex process, and, be difficult to obtain its real electrical parameter value after the alligatoring for the crystal grain after cutting thoroughly.
Given this, be necessary to provide a kind of suitable arbitrary dimension chip production method, require technology simple, cost is low, especially is fit to the volume production of small size chip.
Summary of the invention
In order to overcome above-mentioned defective, the invention provides a kind of wet etching preparation method of AlGaInP light-emitting diode, after its method is the chip hemisection, before encapsulation, chip is carried out wet etching, improve the light extraction efficiency of light-emitting diode.
Technical scheme of the present invention is: with processing with caustic solution after the hemisection of AlGaInP light-emitting diode chip for backlight unit, processing step is:
Step 1: with the light-emitting diode chip for backlight unit hemisection, the hemisection degree of depth 40～60um:
Step 2: the full wafer chip is placed on 2 cun the vacuum cup open vacuum;
Step 3: in funnel, pour corrosive liquid into, make corrosive liquid be tiled in chip surface uniformly, chip is corroded;
Step 4: open at the uniform velocity slewing, corrosive liquid is got rid of, then bath;
Step 5: dry up with nitrogen gun.
The present invention does sideetching through using corrosive liquid to the chip after the hemisection, has reduced the absorption of chip edge part GaAs to light, has improved the light extraction efficiency of light-emitting diode.Simultaneously, the chip after the hemisection is done surface coarsening, can obtain the true electrical parameter value of chip.And both can be used, and brightening effect is stackable.
Said corrosive liquid is ammoniacal liquor-hydrogen peroxide solution-deionized water corrosive liquid or clorox corrosive liquid; The volume proportion of ammoniacal liquor, hydrogen peroxide solution and deionized water is 1: 2～5: 1 in ammoniacal liquor-hydrogen peroxide solution-deionized water corrosive liquid; The volume proportion of liquor natrii hypochloritis and water is 1: 15～20 in the clorox corrosive liquid;
Wherein: ammonia concn is 28～30%; The concentration of hydrogen peroxide solution is 30～32%; Liquor natrii hypochloritis's concentration is 5～7%.
Corrosion can be carried out once or twice, if carry out twice corrosion, promptly behind processing step (4) again repeating step (3) and (4) once, the nitrogen gun of then carrying out step (5) dries up.
Corrode to use ammoniacal liquor-hydrogen peroxide solution-deionized water corrosive liquid earlier through putting into practice twice corrosion; The back uses effect that the clorox corrosive liquid corrodes for well.In the used time in when corrosion: to use ammoniacal liquor-hydrogen peroxide solution-deionized water corrosive liquid be 60～120 seconds when corroding, be 25～30 seconds effects when using the clorox corrosive liquid to corrode for well.Temperature is 50 ℃ during the preparation of clorox corrosive liquid.
The invention has the advantages that through the method for wet etching, the arbitrary dimension light-emitting diode chip for backlight unit all is suitable for, brightness promotes obviously, can have good repeatability up to 12～35%.And method equipment provided by the invention is simple, and technology is simple, and cost is low, especially is fit to the volume production of small size chip.
Description of drawings
Fig. 1: for corroding the side schematic view of back chip.
Fig. 2: be self-control anchor clamps sketch map.
Wherein: 001 is top electrode, and 002 is roughened layer, and 003 is Window layer, and 004 is luminescent layer, and 005 is the DBR speculum, and 006 is substrate, and 007 is bottom electrode; 011 is water pipe, and 012 is funnel, and 013 is porous nozzle, and 014 is vacuum cup, and 015 is rotating shaft at the uniform velocity.
Specific embodiment
Embodiment 1
Step 1: adopt the contact scribing process that chip is carried out hemisection, the hemisection degree of depth is 40-60um.
Step 2: chip is placed on 2 cun the vacuum cup open vacuum valve.
Step 3: configuration ammoniacal liquor-hydrogen peroxide solution-deionized water corrosive liquid, ammonia concn is 28%; The concentration of hydrogen peroxide solution is 32%; Ammoniacal liquor and hydrogen peroxide solution and deionized water volume ratio are 1: 2: 1.
Step 4: in funnel, pour ammoniacal liquor-hydrogen peroxide solution-deionized water corrosive liquid into, make corrosive liquid be tiled in chip surface uniformly, chip is corroded.
Step 5:100 opens at the uniform velocity slewing after second, corrosive liquid is got rid of, then bath.
Step 6: nitrogen dries up.Step 1:
The photoelectric properties parameter of table 1 chip relatively
| Sample | Brightness mcd (20mA) |
| Not corrosion | 152.7 |
| Corrosion | 175 |
With reference to table 1 experimental data, the more uncorroded raising 14.6% of chip light intensity.
Embodiment 2
Step 1: adopt the contact scribing process that chip is carried out hemisection, the hemisection degree of depth is 40-60um.
Step 2: chip is placed on 2 cun the vacuum cup open vacuum valve.
Step 3: configuration ammoniacal liquor-hydrogen peroxide solution-deionized water corrosive liquid, ammonia concn is 30%; The concentration of hydrogen peroxide solution is 30%; Ammoniacal liquor and hydrogen peroxide solution and deionized water volume ratio are 1: 5: 1.
Step 4: in funnel, pour ammoniacal liquor-hydrogen peroxide solution-deionized water corrosive liquid into, make corrosive liquid be tiled in chip surface uniformly, chip is corroded.
Step 5:60 opens at the uniform velocity slewing after second, corrosive liquid is got rid of, then bath.
Step 6: nitrogen dries up.
The photoelectric properties parameter of table 2 chip relatively
| Sample | Brightness mcd (20mA) |
| Not corrosion | 152.7 |
| Corrosion | 171.5 |
With reference to table 2 experimental data, the more uncorroded raising 12.3% of chip light intensity.
Embodiment 3
Step 1: adopt the contact scribing process that chip is carried out hemisection, the hemisection degree of depth is 40-60um.
Step 2: chip is placed on 2 cun the vacuum cup open vacuum valve.
Step 3: configuration clorox corrosive liquid, liquor natrii hypochloritis and water are 1: 18 by volume, and liquor natrii hypochloritis's concentration is 5.5%, and temperature is 50 ℃.
Step 4: in funnel, pour the clorox corrosive liquid into, make corrosive liquid be tiled in chip surface uniformly, chip is corroded.
Behind step 5:25～30 second, open at the uniform velocity slewing, corrosive liquid is got rid of, then bath.
Step 6: nitrogen dries up.
The photoelectric properties parameter of table 3 chip relatively
| Sample | Brightness mcd (20mA) |
| Not corrosion | 152.7 |
| Corrosion | 174 |
With reference to table 3 experimental data, the more uncorroded raising 13.9% of chip light intensity.
Embodiment 4
Step 1: adopt the contact scribing process that chip is carried out hemisection, the hemisection degree of depth is 40-60um.
Step 2: chip is placed on 2 cun the vacuum cup open vacuum valve.
Step 3: configuration clorox corrosive liquid, liquor natrii hypochloritis and water volume ratio are 1: 20, and liquor natrii hypochloritis's concentration is 5%, and temperature is 50 ℃.
Step 4: in funnel, pour the clorox corrosive liquid into, make corrosive liquid be tiled in chip surface uniformly, chip is corroded.
Behind step 5:25～30 second, open at the uniform velocity slewing, corrosive liquid is got rid of, then bath.
Step 6: nitrogen dries up.
The photoelectric properties parameter of table 4 chip relatively
| Sample | Brightness mcd (20mA) |
| Not corrosion | 150.4 |
| Corrosion | 172 |
With reference to table 4 experimental data, the more uncorroded raising 14.4% of chip light intensity.
Embodiment 5
Step 1: adopt the contact scribing process that chip is carried out hemisection, the hemisection degree of depth is 40-60um.
Step 2: chip is placed on 2 cun the vacuum cup open vacuum valve.
Step 3: configuration ammoniacal liquor-hydrogen peroxide solution-deionized water corrosive liquid, ammonia concn is 28%; The concentration of hydrogen peroxide solution is 32%; Ammoniacal liquor and hydrogen peroxide solution and deionized water volume ratio are 1: 3: 1.
Step 4: in funnel, pour ammoniacal liquor-hydrogen peroxide solution-deionized water corrosive liquid into, make corrosive liquid be tiled in chip surface uniformly, chip is corroded.
Step 5:120 opens at the uniform velocity slewing after second, corrosive liquid is got rid of, then bath.
Step 6: configuration clorox corrosive liquid, liquor natrii hypochloritis and volume ratio are 1: 15, and liquor natrii hypochloritis's concentration is 7%, and temperature is 50 ℃.
Step 7: in funnel, pour the clorox corrosive liquid into, make corrosive liquid be tiled in chip surface uniformly, chip is corroded.
Behind step 8:25～30 second, open at the uniform velocity slewing, corrosive liquid is got rid of, then bath.
Step 9: nitrogen dries up.
The photoelectric properties parameter of table 5 chip relatively
| Sample | Brightness mcd (20mA) |
| Not corrosion | 152.7 |
| Corrosion | 206 |
With reference to table 5 experimental data, the more uncorroded raising 35% of chip light intensity.Has good repeatability.
Claims (6)
1.AlGaInP the preparation method of light-emitting diode is characterized in that processing step is with processing with caustic solution after the light-emitting diode chip for backlight unit hemisection:
(1) with the light-emitting diode chip for backlight unit hemisection, hemisection degree of depth 40-60um;
(2) the full wafer chip is placed on 2 cun the vacuum cup open vacuum;
(3) in funnel, pour corrosive liquid into, make corrosive liquid be tiled in chip surface uniformly, chip is corroded;
Open at the uniform velocity slewing after (4) 20～120 seconds, corrosive liquid is got rid of, then bath;
(5) dry up with nitrogen gun.
Said corrosive liquid is ammoniacal liquor-hydrogen peroxide solution-deionized water corrosive liquid or clorox corrosive liquid; The volume proportion of ammoniacal liquor, hydrogen peroxide solution and deionized water is 1: 2～5: 1 in ammoniacal liquor-hydrogen peroxide solution-deionized water corrosive liquid; The volume proportion of liquor natrii hypochloritis and water is 1: 15～20 in the clorox corrosive liquid;
Wherein: ammonia concn is 28～30%; The concentration of hydrogen peroxide solution is 30～32%; Liquor natrii hypochloritis's concentration is 5～7%.
2. according to the preparation method of the said AlGaInP light-emitting diode of claim 1, it is characterized in that carrying out twice corrosion, promptly behind processing step (4) again repeating step (3) and (4) once, the nitrogen gun of then carrying out step (5) dries up.
3. according to the preparation method of the said AlGaInP light-emitting diode of claim 2, it is characterized in that carrying out using earlier in twice corrosion ammoniacal liquor-hydrogen peroxide solution-deionized water corrosive liquid to corrode; Corrode with the clorox corrosive liquid back.
4. according to the preparation method of claim 1,2 or 3 said AlGaInP light-emitting diodes, it is characterized in that with ammoniacal liquor-hydrogen peroxide solution-when the deionized water corrosive liquid corroded, etching time was 60～120 seconds.
5. according to the preparation method of claim 1,2 or 3 said AlGaInP light-emitting diodes, when it is characterized in that corroding with the clorox corrosive liquid, etching time is 25～30 seconds.
6. according to the preparation method of claim 1,2 or 3 said AlGaInP light-emitting diodes, temperature is 50 ℃ when it is characterized in that the preparation of clorox corrosive liquid.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102536778A CN102376827A (en) | 2010-08-13 | 2010-08-13 | Preparation method of AlGaInp light-emitting diode |
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| CN2010102536778A CN102376827A (en) | 2010-08-13 | 2010-08-13 | Preparation method of AlGaInp light-emitting diode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104659166A (en) * | 2015-02-11 | 2015-05-27 | 山东浪潮华光光电子股份有限公司 | Wet-oxygen oxidation method of GaAs-based light emitting diode |
| CN105409012A (en) * | 2013-07-25 | 2016-03-16 | 欧司朗光电半导体有限公司 | Optoelectronic semiconductor chip, optoelectronic component, and method for producing semiconductor chips |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0551198B2 (en) * | 1985-10-29 | 1993-07-30 | Sumitomo Bakelite Co | |
| JP2003179005A (en) * | 2001-12-13 | 2003-06-27 | Tokyo Electron Ltd | Method and device for separating semiconductor devices |
| CN1472556A (en) * | 2003-06-24 | 2004-02-04 | 重庆大学 | Micromechanical optical switch made of metal material |
| US20070126019A1 (en) * | 2003-11-04 | 2007-06-07 | Shin-Etsu Handotai Co., Ltd. | Light emitting device |
| CN101540363A (en) * | 2009-04-28 | 2009-09-23 | 上海大晨半导体技术有限公司 | Method for coarsening surface of quaternary system AlGaInP LED chip |
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2010
- 2010-08-13 CN CN2010102536778A patent/CN102376827A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0551198B2 (en) * | 1985-10-29 | 1993-07-30 | Sumitomo Bakelite Co | |
| JP2003179005A (en) * | 2001-12-13 | 2003-06-27 | Tokyo Electron Ltd | Method and device for separating semiconductor devices |
| CN1472556A (en) * | 2003-06-24 | 2004-02-04 | 重庆大学 | Micromechanical optical switch made of metal material |
| US20070126019A1 (en) * | 2003-11-04 | 2007-06-07 | Shin-Etsu Handotai Co., Ltd. | Light emitting device |
| CN101540363A (en) * | 2009-04-28 | 2009-09-23 | 上海大晨半导体技术有限公司 | Method for coarsening surface of quaternary system AlGaInP LED chip |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105409012A (en) * | 2013-07-25 | 2016-03-16 | 欧司朗光电半导体有限公司 | Optoelectronic semiconductor chip, optoelectronic component, and method for producing semiconductor chips |
| US10115868B2 (en) | 2013-07-25 | 2018-10-30 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip, optoelectronic component, and method of producing semiconductor chips |
| CN105409012B (en) * | 2013-07-25 | 2019-04-05 | 欧司朗光电半导体有限公司 | Opto-electronic semiconductor chip, opto-electronic device and the method for manufacturing semiconductor chip |
| DE102013107967B4 (en) * | 2013-07-25 | 2021-05-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelectronic semiconductor chip, optoelectronic component and method for producing a plurality of optoelectronic semiconductor chips |
| CN104659166A (en) * | 2015-02-11 | 2015-05-27 | 山东浪潮华光光电子股份有限公司 | Wet-oxygen oxidation method of GaAs-based light emitting diode |
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