CN105576093B - Method for stripping chip epitaxial substrate - Google Patents
Method for stripping chip epitaxial substrate Download PDFInfo
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- CN105576093B CN105576093B CN201610099835.6A CN201610099835A CN105576093B CN 105576093 B CN105576093 B CN 105576093B CN 201610099835 A CN201610099835 A CN 201610099835A CN 105576093 B CN105576093 B CN 105576093B
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- epitaxial substrate
- stripping means
- strong acid
- base resistance
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- 239000000758 substrate Substances 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000002585 base Substances 0.000 claims description 33
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 26
- 238000012545 processing Methods 0.000 claims description 17
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000002253 acid Substances 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000005260 corrosion Methods 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 8
- 230000010355 oscillation Effects 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 7
- 238000006424 Flood reaction Methods 0.000 claims description 6
- 239000004809 Teflon Substances 0.000 claims description 6
- 229920006362 Teflon® Polymers 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910001868 water Inorganic materials 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 3
- 229920002554 vinyl polymer Polymers 0.000 claims description 3
- 238000002242 deionisation method Methods 0.000 claims 1
- 238000010079 rubber tapping Methods 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 8
- 238000005336 cracking Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910004007 HAc Inorganic materials 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 241000282320 Panthera leo Species 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 244000118350 Andrographis paniculata Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000035618 desquamation Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to a stripping method of a chip epitaxial substrate, wherein a conductive substrate and an epitaxial substrate are respectively arranged on two sides of a chip, and the epitaxial substrate is a Si substrate.
Description
Technical field
The present invention relates to chip preparation field, and in particular to a kind of stripping means of chip epitaxial substrate.
Background technology
LED has the advantages that environmental protection, energy-conservation exhibition have a extensive future, and is described as forth generation green illumination light source.It is high-power highlighted
Spending LED has the huge prospect of substitution incandescent lamp.Industrially, it is to utilize fluorescent material covering blue light nitrogen to produce one of approach of white light
Change gallium base LED.
Sapphire growth substrate is growing gallium nitride base LED industrialization substrate.But its price is higher, diameter is small, because
And production cost is high.There is very big lattice mismatch (16%) and thermal mismatching (25%) in it, cause the GaN of growth thin between GaN
Film quality is poor；Although SiC and GaN lattice mismatch only 3.5%, thermal conductivity is higher, its thermal mismatching and sapphire phase
It is poor with GaN wetability when (25.6%), it is expensive, and epitaxy technology is monopolized by Creat Company of the U.S., therefore
Can not generally it use.Under relatively, Si substrates have that cost is low, monocrystalline size is big and quality is high, thermal conductivity is high, electric conductivity is good
It is good, it can be made into the various features such as good vertical stratification that radiate.But Si is up to 54% with GaN thermal mismatchings, and Si is to visible
The absorption of light can also substantially reduce LED luminous efficiencies.As can be seen here, even if Si graph substrates have very good development
Prospect, but LED chip is made from Si substrates, solve the problems, such as Si extinctions, it is also necessary to develop new method and technique.
In order to eliminate absorption of the Si substrates to light, stacking metallic reflector is anti-in metal on GaN-based LED epitaxial layer
Penetrate and conductive support substrate is bonded on layer, then peel off Si growth substrates again.The conventional method of Si substrate desquamations is included into mechanical grinding
Mill method and etch and combination.Mechanical milling method is to be ground off Si substrates with milling tool, due to Si substrate thickness
There are hundreds of microns of thickness, and LED epitaxial layers only have several microns, it is too high to grinding precision when grinding is close to semiconductor device layer,
Difficulty is too big, it is difficult to control.Etch be with to there is corrosive Si corrosive liquids to fall Si substrate etchings Si substrates, due to
The difference of lattice mismatch and thermal coefficient of expansion between Si substrates and GaN be present, exist inside Si backing materials and epitaxial layer
Certain internal stress, when corrosion, because the uneven and remaining supporting layer of stress release is too thin, frequently result in film layer production
Raw cracking and a certain degree of warpage.Because in corrosion process, conductive substrates are also submerged in solution, etchant solution also can
Etching conductive substrate so that finished product rate is relatively low.
The content of the invention
It is an object of the invention to provide a kind of cost is low, high yield rate, can effectively protect chip, avoids that warpage occurs
With the stripping means of the chip epitaxial substrate of cracking.
To solve the above problems, the technical solution adopted in the present invention is as follows：
A kind of stripping means of chip epitaxial substrate, the two sides of the chip are respectively equipped with conductive substrates and epitaxial substrate,
The epitaxial substrate is Si substrates, is comprised the following steps：
A. coring piece, the surface of chip conductive substrate is then adhered to UV dicing tapes so that conductive substrates surface quilt
UV dicing tapes cover, and then squeeze out the bubble between conductive substrates and UV dicing tapes；UV dicing tapes in the present invention, can
Using the UV dicing tapes from base as polyolefin, for example with the model 6360- of high (Sliontec) company production of lion power
50 UV dicing tapes；
B. strong acid-base resistance piece is taken, cross section is then dug on strong acid-base resistance piece to be circular and can accommodate and pass through a steps
The blind hole of chip after processing；
C. wax under molten condition is poured into the blind hole of the strong acid-base resistance piece handled by b step, a steps of then learning from else's experience
The chip of processing, one side of the chip covered with UV dicing tapes is put into blind hole, pressing, cooling so that UV cuts glue
Take one wax layer of covering；
D. corrosion stripping is carried out to the Si substrates of the chip by step c processing using acid solution or alkali lye.
In the present invention, preferable scheme be the stripping means also include step e. learnt from else's experience Step d processing chip, will
Wax layer, strong acid-base resistance piece and UV dicing tapes on chip remove.
In the present invention, preferable scheme is that the step e is specially：Heating melts wax, then peels off strong acid-base resistance
Piece, then wax is removed by ultrasonic cleaning clean；Then, with ultra violet lamp so that UV dicing tapes lose viscosity, then
UV dicing tapes are separated with chip.
In the present invention, preferable scheme is that the chip in a steps carries out cleaning treatment in adhesion UV dicing tapes to chip.
In the present invention, preferable scheme is that the cleaning treatment is specially：Chip is put into beaker, ethanol is poured into and floods
Chip, then sonic oscillation 3min；Then, ethanol is poured out, then pours into deionized water and floods chip, sonic oscillation 3min；Take out
Chip, then chip is dried up with nitrogen gun.
In the present invention, preferable scheme is that the chip is LED vertical chip, and the strong acid-base resistance piece is selected from polytetrafluoroethyl-ne
Alkene piece, silicon carbide plate and phenolic aldehyde vinyl piece.
In the present invention, preferable scheme is the LED vertical chip that the chip is 2 inches, and the strong acid-base resistance piece is straight
The circular teflon plate that footpath is 6cm, thickness is 1cm, a diameter of 5.1cm of the blind hole, depth are 480 μm.
In the present invention, preferable scheme is in the step c, during pressing, the wax for overflowing blind hole is struck off dry
Only.
In the present invention, preferable scheme is that the acid solution is HF, HNO3, HAc and water according to volume ratio be 1:4:1:1 mixing
Obtain.
In the present invention, preferable scheme is that the alkali lye is KOH solution or NaOH solution.
Compared with prior art, the invention has the advantages that：The stripping means of the chip epitaxial substrate of the present invention, will
The conductive substrates of LED chip are first protected with UV dicing tapes, are then adhered to wax on strong acid-base resistance piece, then be put into etchant solution
In corroded, under the duplicate protection of wax layer and UV dicing tapes, in corrosion, wax layer and UV dicing tapes and resistance to strong acid
The stress that chip discharges when alkali piece can sponge corrosion so that chip entirety uniform force, warpage and cracking will not be produced
Phenomenon；In addition, conductive substrates will not also touch corrosive liquid, will not suffer erosion；Simultaneously more traditional polishing cost it is lower,
More traditional chemical corrosion method high yield rate, suitable for industrial production application.
With reference to embodiment, the present invention is described in detail.
Embodiment
A kind of stripping means of chip epitaxial substrate, the two sides of the chip are respectively equipped with conductive substrates and epitaxial substrate,
The epitaxial substrate is Si substrates, is comprised the following steps：
A. coring piece, the surface of chip conductive substrate is then adhered to UV dicing tapes so that conductive substrates surface quilt
UV dicing tapes cover, and then squeeze out the bubble between conductive substrates and UV dicing tapes；
B. strong acid-base resistance piece is taken, cross section is then dug on strong acid-base resistance piece to be circular and can accommodate and pass through a steps
The blind hole of chip after processing；
C. wax under molten condition is poured into the blind hole of the strong acid-base resistance piece handled by b step, a steps of then learning from else's experience
The chip of processing, one side of the chip covered with UV dicing tapes is put into blind hole, pressing, cooling so that UV cuts glue
Take one wax layer of covering；
D. corrosion stripping is carried out to the Si substrates of the chip by step c processing using acid solution or alkali lye.
In the present invention, preferable scheme be the stripping means also include step e. learnt from else's experience Step d processing chip, will
Wax layer, strong acid-base resistance piece and UV dicing tapes on chip remove.
In the present invention, preferable scheme is that the step e is specially：Heating melts wax, then peels off strong acid-base resistance
Piece, then wax is removed by ultrasonic cleaning clean；Then, with ultra violet lamp so that UV dicing tapes lose viscosity, then
UV dicing tapes are separated with chip.Wherein, in ultrasonic cleaning, being cleaned by ultrasonic that liquid uses can be with dissolving wax with dimethylbenzene etc.
Solution.
In the present invention, preferable scheme is that the chip in a steps carries out cleaning treatment in adhesion UV dicing tapes to chip.
In the present invention, preferable scheme is that the cleaning treatment is specially：Chip is put into beaker, ethanol is poured into and floods
Chip, then sonic oscillation 3min；Then, ethanol is poured out, then pours into deionized water and floods chip, sonic oscillation 3min；Take out
Chip, then chip is dried up with nitrogen gun.
In the present invention, preferable scheme is that the chip is LED vertical chip；The LED vertical chip can be various
The chip of specification, if size specification is 2 inches, 4 inches, 6 inches, 8 inches；The strong acid-base resistance piece can select strong acid-base resistance
Tablet made of material, such as teflon plate, silicon carbide plate or phenolic aldehyde vinyl piece；For the ease of being operated and being moved
Send, it is preferred to use shore hardness is 55 ± 5 polytetrafluoroethylmaterial material.
In the present invention, preferable scheme is the LED vertical chip that the chip is 2 inches, and the strong acid-base resistance piece is straight
The circular teflon plate that footpath is 6cm, thickness is 1cm, a diameter of 5.1cm of the blind hole, depth are 480 μm.
In the present invention, preferable scheme is in the step c, during pressing, the wax for overflowing blind hole is struck off dry
Only；In such manner, it is possible to avoid wax contamination Si substrate surfaces.
In the present invention, preferable scheme is that the acid solution is that can corrode the various acid solutions of silicon, for example with HF, HNO3,
HAc and water are 1 according to volume ratio:4:1:1 is mixed to get.
In the present invention, preferable scheme is that the alkali lye is the various alkali lye that can corrode silicon, as KOH solution or NaOH are molten
Liquid.
Embodiment 1
A kind of stripping means of chip epitaxial substrate, the two sides of the chip are respectively equipped with conductive substrates and epitaxial substrate,
The epitaxial substrate is Si substrates, is comprised the following steps：
A. coring piece, then with UV dicing tapes, (lion power holds high the UV for the model 6360-50 that (Sliontec) company produces
Dicing tape
) it is adhered to the surface of chip conductive substrate so that conductive substrates surface is covered by UV dicing tapes, then squeezes out and leads
Bubble between electric substrate and UV dicing tape；Cleaning treatment, the cleaning treatment are carried out to chip in adhesion UV dicing tapes
Specially：Chip is put into beaker, ethanol is poured into and floods chip, then sonic oscillation 3min；Then, ethanol is poured out, then is fallen
Enter deionized water and flood chip, sonic oscillation 3min；Chip is taken out, is then dried up chip with nitrogen gun；
B. strong acid-base resistance piece is taken, cross section is then dug on strong acid-base resistance piece to be circular and can accommodate and pass through a steps
The blind hole of chip after processing；
C. wax under molten condition is poured into the blind hole of the strong acid-base resistance piece handled by b step, a steps of then learning from else's experience
The chip of processing, one side of the chip covered with UV dicing tapes is put into blind hole, pressing, cooling so that UV cuts glue
Take one wax layer of covering；
D. corrosion stripping is carried out to the Si substrates of the chip by step c processing using acid solution；
E. the chip of Step d of learning from else's experience processing, the wax layer on chip, strong acid-base resistance piece and UV dicing tapes are removed；E is walked
It is rapid to be specially：The chip of Step d of learning from else's experience processing, the wax layer on chip, strong acid-base resistance piece and UV dicing tapes are removed；Heating
Melt wax, then peel off strong acid-base resistance piece, then remove wax by ultrasonic cleaning clean；Then, use can send wavelength
For the ultra violet lamp of 365nm ultraviolets so that UV dicing tapes lose viscosity, then separate UV dicing tapes with chip；
Wherein, in ultrasonic cleaning, it is cleaned by ultrasonic liquid and uses dimethylbenzene；
The chip is 2 inches of LED vertical chip, and the LED vertical chip includes conductive substrates compound successively, electrode
Layer, epitaxial layer and Si substrates；The circular teflon plate that the strong acid-base resistance piece is a diameter of 6cm, thickness is 1cm, it is described
A diameter of 5.1cm of blind hole, depth are 480 μm；
The acid solution is using HF, HNO3, HAc and water according to volume ratio be 1:4:1:1 acid solution being mixed to get.
100 pieces of LED vertical chips are taken, the Si substrates in above-mentioned LED vertical chip are shelled using the present embodiment method
From, after the completion of processing, observe the surface of LED vertical chip, do not occur on 100 pieces of chips warpage and cracking phenomenon, it is seen that
The method high yield rate of the present invention.
Embodiment 2
A kind of stripping means of chip epitaxial substrate, Si is served as a contrast using NaOH solution in step d as different from Example 1
Bottom carries out corrosion stripping, and remaining step, parameter are same as Example 1.
100 pieces of LED vertical chips are taken, the Si substrates in above-mentioned LED vertical chip are shelled using the present embodiment method
From, after the completion of processing, observe the surface of LED vertical chip, do not occur on 100 pieces of chips warpage and cracking phenomenon, it is seen that
The method high yield rate of the present invention.
Above-mentioned embodiment is only the preferred embodiment of the present invention, it is impossible to the scope of protection of the invention is limited with this,
The change and replacement for any unsubstantiality that those skilled in the art is done on the basis of the present invention belong to institute of the present invention
Claimed scope.
Claims (10)
1. a kind of stripping means of chip epitaxial substrate, the two sides of the chip are respectively equipped with conductive substrates and epitaxial substrate, institute
It is Si substrates to state epitaxial substrate, it is characterised in that is comprised the following steps：
A. coring piece, the surface of chip conductive substrate is then adhered to UV dicing tapes so that cut by UV on conductive substrates surface
Rubber tapping band covering, then squeezes out the bubble between conductive substrates and UV dicing tapes；
B. strong acid-base resistance piece is taken, cross section is then dug on strong acid-base resistance piece to be circular and can accommodate and pass through a step process
The blind hole of chip afterwards；
C. wax under molten condition is poured into the blind hole of the strong acid-base resistance piece handled by b step, a step process of then learning from else's experience
Chip, one side of the chip covered with UV dicing tapes is put into blind hole, pressing, cooling so that on UV dicing tapes
Cover a wax layer；
D. corrosion stripping is carried out to the Si substrates of the chip by step c processing using acid solution or alkali lye.
2. the stripping means of chip epitaxial substrate according to claim 1, it is characterised in that：Also learnt from else's experience including step e.
The chip of Step d processing, the wax layer on chip, strong acid-base resistance piece and UV dicing tapes are removed.
3. the stripping means of chip epitaxial substrate according to claim 2, it is characterised in that the step e is specially：Add
Heat melts wax, then peels off strong acid-base resistance piece, then removes wax by ultrasonic cleaning clean；Then, shone with uviol lamp
Penetrate so that UV dicing tapes lose viscosity, then separate UV dicing tapes with chip.
4. the stripping means of chip epitaxial substrate according to claim 1, it is characterised in that：Chip in a steps is viscous
Before attached UV dicing tapes, cleaning treatment is carried out to chip.
5. the stripping means of chip epitaxial substrate according to claim 4, it is characterised in that the cleaning treatment is specially：
Chip is put into beaker, ethanol is poured into and floods chip, then sonic oscillation 3min；Then, ethanol is poured out, then pours into deionization
Water submerged chip, sonic oscillation 3min；Chip is taken out, is then dried up chip with nitrogen gun.
6. the stripping means of chip epitaxial substrate according to claim 1, it is characterised in that：The chip is that LED is vertical
Chip, the strong acid-base resistance piece are selected from teflon plate, silicon carbide plate or phenolic aldehyde vinyl piece.
7. the stripping means of chip epitaxial substrate according to claim 6, it is characterised in that：The chip is 2 inches
LED vertical chip, the circular teflon plate that the strong acid-base resistance piece is a diameter of 6cm, thickness is 1cm, the blind hole
A diameter of 5.1cm, depth are 480 μm.
8. the stripping means of chip epitaxial substrate according to claim 1, it is characterised in that：In the step c, pressing
During, the wax scraped clean of blind hole will be overflowed.
9. the stripping means of chip epitaxial substrate according to claim 1, it is characterised in that：The acid solution is HF, HNO3、
HAc and water are 1 according to volume ratio:4:1:1 is mixed to get.
10. the stripping means of chip epitaxial substrate according to claim 1, it is characterised in that：The alkali lye is KOH solution
Or NaOH solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610099835.6A CN105576093B (en) | 2016-02-23 | 2016-02-23 | Method for stripping chip epitaxial substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610099835.6A CN105576093B (en) | 2016-02-23 | 2016-02-23 | Method for stripping chip epitaxial substrate |
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| CN105576093A CN105576093A (en) | 2016-05-11 |
| CN105576093B true CN105576093B (en) | 2018-02-02 |
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| CN113299804B (en) * | 2021-06-29 | 2022-07-29 | 南京阿吉必信息科技有限公司 | Micro-LED chip preparation and substrate stripping method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0936486A (en) * | 1995-07-18 | 1997-02-07 | Oki Electric Ind Co Ltd | Fabrication of semiconductor light emitting element |
| JP2005072422A (en) * | 2003-08-27 | 2005-03-17 | Nec Corp | Semiconductor element epitaxial layer separating method |
| CN101325235A (en) * | 2008-07-10 | 2008-12-17 | 中山大学 | Method for transferring silicon based gallium nitride epitaxial layer of LED |
| CN103855253A (en) * | 2012-11-29 | 2014-06-11 | 江苏汉莱科技有限公司 | Protective layer for LED chip grinding and thinning, application and preparation method for the same |
| CN104091863A (en) * | 2014-07-09 | 2014-10-08 | 湘能华磊光电股份有限公司 | Method for removing LED core grain back plating layer |
-
2016
- 2016-02-23 CN CN201610099835.6A patent/CN105576093B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0936486A (en) * | 1995-07-18 | 1997-02-07 | Oki Electric Ind Co Ltd | Fabrication of semiconductor light emitting element |
| JP2005072422A (en) * | 2003-08-27 | 2005-03-17 | Nec Corp | Semiconductor element epitaxial layer separating method |
| CN101325235A (en) * | 2008-07-10 | 2008-12-17 | 中山大学 | Method for transferring silicon based gallium nitride epitaxial layer of LED |
| CN103855253A (en) * | 2012-11-29 | 2014-06-11 | 江苏汉莱科技有限公司 | Protective layer for LED chip grinding and thinning, application and preparation method for the same |
| CN104091863A (en) * | 2014-07-09 | 2014-10-08 | 湘能华磊光电股份有限公司 | Method for removing LED core grain back plating layer |
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|---|---|
| CN105576093A (en) | 2016-05-11 |
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