CN103855253A - Protective layer for LED chip grinding and thinning, application and preparation method for the same - Google Patents
Protective layer for LED chip grinding and thinning, application and preparation method for the same Download PDFInfo
- Publication number
- CN103855253A CN103855253A CN201210494838.1A CN201210494838A CN103855253A CN 103855253 A CN103855253 A CN 103855253A CN 201210494838 A CN201210494838 A CN 201210494838A CN 103855253 A CN103855253 A CN 103855253A
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- Prior art keywords
- protective layer
- chip
- grinding
- photoresistance
- front surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Abstract
This invention discloses a (/b)(b)LED (/b)(b ) protective layer for LED chip grinding and thinning, an application and a preparation method for the same. In the processes of the (/b)(b)LED (/b)(b )grinding and thinning, a protective layer is smeared on the front surface of the chip before wax pressing, and the protective layer not only improves the chip appearance yield during the process but also improves the following packaging yield (/b).
Description
Technical field
The invention belongs to LED chip preparation field, relate to protective layer and application and the preparation method of LED chip grinding, attenuate.
Background technology
The substrate slice that a slice is 2 inches is of heap of stone brilliant through extension in MOCVD, grow into luminescent layer, P layer, the chip of N layer etc., before chip, technique has been prepared the P utmost point, the N utmost point and luminous zone (ITO) etc., after LED chip, in the preparation process of technique, need first chip lower surface (substrate part) to be ground and polishing, the general preparation technology who improves chip with this first chip front surface (surface of electrode side) by paraffin and certain pressure fixing on ceramic disk, then chip is ground, be thinned to desired thickness and carry out polishing, in this process, be fixed on chip back and abrasive wheel on ceramic disk, polishing disk has the friction of close contact formula mutually, abrasive wheel in the process of friction, polishing disk can produce certain stress to chip.Because paraffin is vitrina, closely similar with the color of chip, grinding after attenuated polishing technique, need to clean removal to the paraffin of chip front surface, but how to differentiate that whether wax cleans up is completely problem demanding prompt solution in the industry always, because the remnants of wax can have a strong impact on the yield of lower continuous technique.
Summary of the invention
[0003] the present inventor is by experiment discovery many times; it in the process of chip grinding, attenuate, is the outward appearance damage that reduces chip front surface; before chip grinding, attenuate, be first coated with after layer protective layer in chip front surface; again by paraffin and certain pressure fixing on ceramic disk; then chip is ground, is thinned to required thickness and carry out the processing such as polishing; Fig. 1 is shown in by schematic diagram, can effectively reduce the damage ratio of the chip front surface of former grinding, reduction process.
[0004] described above first at chip front surface coating layer protective layer before chip grinding, attenuate, test and find this protective layer preferred light resist by inventor.
[0005] described above first at chip front surface coating layer protective layer before chip grinding, attenuate, test and find this protective layer preferred just photoresist or negative photoresist by inventor.
[0006] described abovely grind at chip, before attenuate first at chip front surface coating layer protective layer, test by inventor the thickness of finding this protective layer and be selected from and be greater than 5 μ m and be less than between 15 μ m.Preferably between 10 μ m ± 2.5 μ m, more preferably between 10 μ m ± 0.5 μ m.
[0007] the present inventor is in the time preparing protective layer; by LED chip is positioned on Photoresisting coating machines before grinding attenuate is pressed wax; photoresistance is splashed in the middle of chip front surface; coating machine first rotating speed is set between 2000 ± 250dpm; time, between 10 ± 1.5 seconds, makes photoresist evenly coat chip front surface, and second rotating speed is between 3500 ± 250dpm; time, between 50 ± 5 seconds, can solidify at chip surface Quick-air-drying photoresist.
[0008] photoresistance is splashed in the middle of chip front surface, coating machine first rotating speed is preferably set between 2000 ± 250dpm, time is between 10 ± 1.5 seconds, make photoresist evenly coat chip front surface, the chip N utmost point is filled and led up and made chip front surface smooth, second rotating speed is between 3500 ± 100dpm, and the time, between 50 ± 2 seconds, can solidify at chip surface Quick-air-drying photoresist.
[0009] photoresistance is splashed in the middle of chip front surface, it is 2000dpm that coating machine first rotating speed is more preferably set, and the time is 10 seconds, make photoresist evenly coat chip front surface, second rotating speed is 3500dpm, and the time is 50 seconds, and photoresist can be solidified at chip surface Quick-air-drying.
[0010] thickness of controlling protective layer in above-mentioned technique is less than between 15 μ m for being greater than 5 μ m.Preferably between 10 μ m ± 2.5 μ m, more preferably between 10 μ m ± 0.5 μ m.
[0011] the present inventor find to grind at LED chip, after attenuate LED chip after ceramic disk is taken off, need to carry out paraffin removal processing to the paraffin of chip surface, because paraffin is water white transparency, in former technique, whether the paraffin of chip surface is removed totally, never evaluation method, cause many times chip surface to also have and residually just entered next process when cured, had a strong impact on the quality of subsequent technique.The inventor finds by the protective layer of chip; after chip front surface being coated with to photoresist before grinding, attenuate, fix by paraffin and ceramic disk again; then in the process of paraffin removal; because of the intervention of photoresist; if it is unclean that paraffin is removed; to leave the obvious marking at chip surface, wax schematic diagram as residual in Fig. 2 chip.So protective layer of the present invention can be used for judging that whether completely LED chip grinds, chip surface paraffin removal foundation after attenuate.
Brief description of the drawings
[0012] in the present invention, accompanying drawing, only for the present invention is further explained, must not be served as the restriction of invention scope of the present invention.
[0013] accompanying drawing 1 chip is fixed on the generalized section of ceramic disk through paraffin after by coating protective layer
The residual wax schematic diagram of accompanying drawing 2 chip
1 is chip, and 2 is protective layer, and 3 is paraffin, and 4 is ceramic disk, and 5 is residual wax schematic diagram
Embodiment
[0014] embodiments of the invention are only for to make an explanation to the present invention, and being convenient to those of ordinary skill in the art can content can implement the present invention according to the present invention, must not serve as the restriction of invention scope of the present invention.
[0015] embodiment 1
Get chip to be ground, attenuate, be positioned on Photoresisting coating machines, photoresistance is splashed in the middle of chip front surface, coating machine first rotating speed is set in 2000dpm left and right, time, about 10 seconds, makes photoresist evenly coat chip front surface, and second rotating speed is in 3500 left and right, time, in 50 left and right, solidifies the photoresist energy Quick-air-drying of chip surface.Control the thickness of photoresist in 10 μ m left and right, again the chip of coating photoresist by paraffin and certain pressure fixing on ceramic disk, then chip is ground, is thinned to required thickness and carry out the processing such as polishing, Fig. 1 is shown in by schematic diagram, and the intervention of photoresist layer can effectively reduce the damage ratio of the chip front surface of former grinding, reduction process.To chip grinding, the follow-up paraffin removal that carries out of reduction processing, show by the color of chip surface photoresist, judge whether paraffin is removed completely.
[0016] embodiment 2
Get chip to be ground, attenuate, be positioned on Photoresisting coating machines, photoresistance is splashed in the middle of chip front surface, coating machine first rotating speed is set in 2000dpm left and right, time, about 10 seconds, makes photoresist evenly coat chip front surface, and second rotating speed is in 3500dpm left and right, time, about 50 seconds, solidifies the photoresist energy Quick-air-drying of chip surface.The thickness of controlling respectively photoresist is 4.5 μ m, 5 μ m, 7.5 μ m, 9.5 μ m, 10 μ m, 10.5 μ m, 12.5 μ m, 15 μ m, 15.5 μ m left and right, again the chip of coating photoresist by paraffin and certain pressure fixing on ceramic disk, then chip is ground, is thinned to required thickness and carry out the processing such as polishing, the intervention of photoresist layer can effectively reduce the damage ratio of the chip front surface of former grinding, reduction process.In the time that the thickness of experiment photoresist is 4.5 μ m, its yield does not improve substantially, when the thickness of photoresist is 5 μ m, its yield improves 50%, when the thickness of photoresist is 7.5 μ m, its yield improves 90%, when the thickness of photoresist is 9.5 μ m, 10 μ m, 10.5 μ m, 12.5 μ m, 15 μ m, 15.5 μ m grinding, in reduction process without any chip because of grinding, the damage of attenuate front surface, can introduce new problem but photoresist layer is too thick, 1, the lifting ratio of cost up and yield is inharmonious; 2, too thick to cause being bundled in chip on ceramic disk unstable for photoresist layer, and easily displacement unit, has increased the difficulty in process of lapping.
[0017] thickness of protective layer is selected from and is greater than 5 μ m and is less than between 15 μ m in sum.Preferably between 10 μ m ± 2.5 μ m, more preferably between 10 μ m ± 0.5 μ m.
Claims (10)
1. a protective layer for LED chip grinding, attenuate, is characterized in that protective layer is selected from photoresistance.
2. protective layer as claimed in claim 1, is characterized in that described protective layer is photoresistance, comprises positive photoresistance and negative photoresistance.
3. protective layer as claimed in claim 1, is characterized in that described protective layer is positioned at chip front surface.
4. protective layer as claimed in claim 1, is characterized in that photoresistance thickness is greater than 5 μ m and is less than between 15 μ m.
5. protective layer as claimed in claim 1, is characterized in that photoresistance thickness is between 10 μ m ± 2.5 μ m.
6. protective layer as claimed in claim 1, is characterized in that photoresistance thickness is between 10 μ m ± 0.5 μ m.
7. the application of protective layer in LED chip grinding, attenuate as described in claim 1-6 any one claim.
8. application as claimed in claim 7, is characterized in that for judging paraffin removal foundation completely after LED chip grinding, the grinding of reduction process process, attenuate.
9. the preparation method of protective layer as described in claim 1-6 any one claim; it is characterized in that LED chip to be positioned on Photoresisting coating machines before grinding attenuate is pressed wax; photoresistance is splashed in the middle of chip front surface; coating machine first rotating speed is set between 2000 ± 250dpm; time is between 10 ± 1.5 seconds; second rotating speed is between 3500 ± 250dpm, and the time is between 50 ± 5 seconds.
10. method as claimed in claim 9, is characterized in that coating machine first rotating speed is 2000dpm, and the time is 10 seconds, and second rotating speed is 3500dpm, and the time is 50 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210494838.1A CN103855253A (en) | 2012-11-29 | 2012-11-29 | Protective layer for LED chip grinding and thinning, application and preparation method for the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210494838.1A CN103855253A (en) | 2012-11-29 | 2012-11-29 | Protective layer for LED chip grinding and thinning, application and preparation method for the same |
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| CN103855253A true CN103855253A (en) | 2014-06-11 |
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| CN201210494838.1A Pending CN103855253A (en) | 2012-11-29 | 2012-11-29 | Protective layer for LED chip grinding and thinning, application and preparation method for the same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105576093A (en) * | 2016-02-23 | 2016-05-11 | 河源市众拓光电科技有限公司 | Method for stripping chip epitaxial substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5927993A (en) * | 1992-02-03 | 1999-07-27 | Motorola, Inc. | Backside processing method |
| CN101719471A (en) * | 2009-12-11 | 2010-06-02 | 四川龙瑞微电子有限公司 | Method for manufacturing field effect transistor |
| CN102420157A (en) * | 2011-10-24 | 2012-04-18 | 华中科技大学 | Method for improving mechanical strength of thinned silicon chip |
-
2012
- 2012-11-29 CN CN201210494838.1A patent/CN103855253A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5927993A (en) * | 1992-02-03 | 1999-07-27 | Motorola, Inc. | Backside processing method |
| CN101719471A (en) * | 2009-12-11 | 2010-06-02 | 四川龙瑞微电子有限公司 | Method for manufacturing field effect transistor |
| CN102420157A (en) * | 2011-10-24 | 2012-04-18 | 华中科技大学 | Method for improving mechanical strength of thinned silicon chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105576093A (en) * | 2016-02-23 | 2016-05-11 | 河源市众拓光电科技有限公司 | Method for stripping chip epitaxial substrate |
| CN105576093B (en) * | 2016-02-23 | 2018-02-02 | 河源市众拓光电科技有限公司 | Method for stripping chip epitaxial substrate |
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Application publication date: 20140611 |