CN102569020B - Method and device for removing cut oxidation films of 8-inch wafers - Google Patents

Method and device for removing cut oxidation films of 8-inch wafers Download PDF

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Publication number
CN102569020B
CN102569020B CN201010597242.5A CN201010597242A CN102569020B CN 102569020 B CN102569020 B CN 102569020B CN 201010597242 A CN201010597242 A CN 201010597242A CN 102569020 B CN102569020 B CN 102569020B
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otch
acid
oxide
film
lifting groove
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CN102569020A (en
Inventor
徐继平
籍小兵
刘斌
边永智
宁永铎
孙洪波
张静
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Youyan semiconductor silicon materials Co.,Ltd.
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YOUYAN NEW MATERIAL Co Ltd
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Abstract

The invention provides a method and device for removing cut oxidation films of 8-inch wafers. The method comprises the steps as follows: (1) silicon wafers are sorted by a sorting machine, cuts vertically face downwards; (2) wafer boxes are arranged on a positioning clamp groove, and are covered by a nitrogen protection cover; (3) a motor is started, and a screw drives a lifting tank to be lifted upwards from an HF acid liquor tank; (4) when an etching block is tightly contacted with each silicon wafer cut, HF acid reacts with the oxidation films; (5) a motor is started, and the lifting tank is driven to descend to the HF acid liquor tank; and (6) the nitrogen protection cover is opened, and the silicon wafers are taken out for checking. According to the method, the conical etching block is contacted with the cuts of the 8-inch wafers, so as to achieve the purpose of removing the oxidation films of the cuts. The device has the advantages of simple structure, convenience for operation, and low process cost.

Description

A kind of 8 inch wafer otch oxide-film minimizing technology and devices
Technical field
The present invention relates to a kind of 8 inch wafer otch oxide-film minimizing technology and devices
Background technology
Along with developing rapidly of domestic IC industry, the demand of silicon substrate material is also increasing, quality requirement is more and more stricter, the outdiffusion and autodoping that cause impurity is prolonged in production process outside in order to prevent heavy doping silicon chip, usually need counterweight doped silicon wafer to carry out the process of back of the body envelope, namely grow one deck SiO at the back side of substrate slice 2film, because impurity is at SiO 2in diffusion coefficient much smaller than the diffusion coefficient in silicon, therefore can carry out effective shutoff to the impurity in substrate slice.Thing followed problem is: silicon chip back side growth SiO 2while film, silicon chip edge grown SiO too 2film, and this one deck SiO at edge 2film, can produce larger impact to the epitaxial layer quality of front side of silicon wafer, therefore must remove edge oxide-film.
The domestic trimming mode taked mainly contains pad pasting trimming and roller trimming two kinds at present; pad pasting trimming takes silicon chip back side to paste the mode of the blue film of PTFE; backside oxide film is protected; edge and otch oxide-film are removed; equipment and the cost of raw material of the employing of this technique are higher; and complex manufacturing, operating difficulties.
Roller trimming is for the back of the body mounting of less than 6 inches, trimming technology is fairly perfect, but die size rises to after 8 inches, otch is adopted to instead of the plane of reference, original roller trimming technology encounters insoluble problem, being exactly otch oxide-film cannot be removed, being therefore necessary to provide a kind of novel device, for removing otch oxide-film.
Summary of the invention
The object of this invention is to provide a kind of 8 inch wafer otch oxide-film minimizing technology and devices, the method, device are simple, and easy to operate, operating efficiency is high, and process costs is lower, compared with pad pasting trimming, process costs be only its ten thousand/several.
For achieving the above object, the present invention takes following design:
This 8 inch wafer otch oxide-film minimizing technology comprise following step: 8 inch silicon wafer managed by device for piling sheets are positioned on gaily decorated basket draw-in groove; now otch vertically downward; build nitrogen protecting cover; start motor; drive lifting groove at the uniform velocity to rise, until stop rising after taper corrosion block and silicon chip incision contacts, the HF acid of carrying reacts with otch oxide-film; after completing oxide-film removal, driven by motor lifting groove is down in HF acid storage.
Wherein said HF acid and H 2the ratio of O is 1: 5-10.
Described driven by motor lifting groove elevation rate is 4-10mm/s.
Described HF acid is 10-30s with the oxide-film time of reacting.
The nitrogen pressure of described nitrogen protecting cover is 10-25psi.
This 8 inch wafer otch oxide-film removal devices; it comprises a nitrogen protecting cover; the liftable groove of a bottom opening; embedded with conical corrosion block; a HF acid storage, a motor leading screw acting on lifting groove combines, 8 inch wafer otch oxide-film minimizing technology according to claim 1; it is characterized in that: wherein said lifting trench bottom for opening borehole structure, Circularhole diameter 10-25mm.
Corrosion block conical points radius of curvature r is 0.8-1.0mm, and taper surface length a is 0.5-2cm, two taper surface angles 90 °, and corrosion tile height b is 5-15cm.
Described corrosion block of material is tetrafluoro, and the cloth being easy to infiltrate and store HF acid has been pasted in conical points position.
The wherein cloth of conical points position stickup, thickness 0.1-0.3mm.
Accompanying drawing explanation
Fig. 1: the process chart removing otch oxide-film
Fig. 2: the front view of apparatus of the present invention
The left view of Fig. 3: Fig. 2
The vertical view of Fig. 4: Fig. 2
Fig. 5: device core schematic diagram
Fig. 6: taper corrosion block schematic diagram
In figure, 1 is container body of outer cover, and 2 is nitrogen protecting cover, and 3 is the lifting groove of built-in corrosion block, and 4 is HF acid storage, and 5 is the combination of electrode leading screw.
Embodiment
Embodiment 1
Consult shown in Fig. 1-Fig. 6, the method for removal 8 inch wafer otch oxide-film of the present invention comprises the steps: first opening device air draft; Adopt device for piling sheets to be managed by silicon chip, silicon chip otch vertically downward; Film magazine is positioned over locating groove, builds nitrogen protecting cover; Open motor, drive lifting groove to be moved upward with speed 4-6mm/s by HF acid acid tank; Until stop motion after corroding block and otch close contact, reaction time 10-15s; Starter motor, drives lifting groove to be back to HF acid tank with speed 4-6mm/s; Open nitrogen protecting cover, take out film magazine, check that otch oxide-film removes situation.Process 100 altogether, check otch situation, remove about 0.6mm, and uniformity, can processing request be met.
Embodiment 2
Consult shown in Fig. 1-Fig. 6, the method for removal 8 inch wafer otch oxide-film of the present invention comprises the steps: first opening device air draft; Adopt device for piling sheets to be managed by silicon chip, silicon chip otch vertically downward; Film magazine is positioned over locating groove, builds nitrogen protecting cover; Open motor, drive lifting groove to be moved upward with speed 6-10mm/s by HF acid acid tank; Until stop motion after corroding block and otch close contact, reaction time 15-30s; Starter motor, drives lifting groove to be back to HF acid tank with speed 6-10mm/s; Open nitrogen protecting cover, take out film magazine, after matched edges oxide-film removal device again, remove edge, process 200 altogether, check otch and edge mate situation, edge remove width and otch completely the same, evenly, meet IC processing request completely.

Claims (10)

1. 8 inch wafer otch oxide-film minimizing technology, is characterized in that: it comprises the following steps:
1) adopt device for piling sheets to be managed by silicon chip, otch vertically downward;
2) film magazine is positioned over locating groove, builds nitrogen protecting cover;
3) open motor, drive the lifting groove of bottom opening upwards to rise by HF acid storage by leading screw, this lifting groove embedded with conical corrosion block, this corrosion block of material is tetrafluoro, and the cloth being easy to infiltrate and store HF acid has been pasted in conical points position;
4) until when corroding block and silicon chip otch close contact, HF acid starts to react with oxide-film;
5) open motor, drive lifting groove to be down to HF acid storage;
6) open nitrogen protecting cover, take out silicon chip and test.
2. 8 inch wafer otch oxide-film minimizing technology according to claim 1, is characterized in that: described HF acid and H 2the ratio of O is 1: 5-10.
3. 8 inch wafer otch oxide-film minimizing technology according to claim 1, is characterized in that: described driven by motor lifting groove elevation rate is 1-10mm/s.
4. 8 inch wafer otch oxide-film minimizing technology according to claim 1, is characterized in that: described HF acid is 10-30s with the oxide-film time of reacting.
5. 8 inch wafer otch oxide-film minimizing technology according to claim 1, is characterized in that: the nitrogen pressure of described nitrogen protecting cover is 10-25psi.
6. for a device for method described in claim 1, it is characterized in that: it comprises a nitrogen protecting cover, the lifting groove of a bottom opening, lifting groove embedded with conical corrosion block, a HF acid storage, a motor leading screw acting on lifting groove combines, a container body of outer cover with vent; Described corrosion block of material is tetrafluoro, and the cloth being easy to infiltrate and store HF acid has been pasted in conical points position.
7. device according to claim 6, is characterized in that: described lifting trench bottom opens borehole structure, Circularhole diameter 10-25mm.
8. device according to claim 6, is characterized in that: described corrosion block conical points radius of curvature r is 0.8-1.0mm, and taper surface length a is 0.5-2cm, two taper surface angles 90 °, and corrosion tile height b is 5-15cm.
9. the device according to claim 6 or 8, is characterized in that: described corrosion block of material is tetrafluoro, and the cloth being easy to infiltrate and store HF acid has been pasted in conical points position.
10. device according to claim 9, is characterized in that: the cloth that conical points position is pasted, thickness 0.1-0.3mm.
CN201010597242.5A 2010-12-10 2010-12-10 Method and device for removing cut oxidation films of 8-inch wafers Active CN102569020B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103065935B (en) * 2012-12-03 2015-02-04 天津中环领先材料技术有限公司 Method of disposing of insulated gate bipolar translator (IGBT) silicon wafer polishing piece edge oxidation film in extrusion mode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1753154A (en) * 2004-09-23 2006-03-29 北京有色金属研究总院 Method of removing chip oxide film edge and its device
CN1777980A (en) * 2003-04-22 2006-05-24 东京毅力科创株式会社 Method for removing silicon oxide film and processing apparatus
CN101339901A (en) * 2007-07-02 2009-01-07 北京有色金属研究总院 Oxide film on wafer surface removing process and apparatus
CN201910408U (en) * 2010-12-10 2011-07-27 北京有色金属研究总院 Removing device of oxide film at 8-inch wafer notch

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5312856B2 (en) * 2008-06-27 2013-10-09 大日本スクリーン製造株式会社 Substrate processing equipment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1777980A (en) * 2003-04-22 2006-05-24 东京毅力科创株式会社 Method for removing silicon oxide film and processing apparatus
CN1753154A (en) * 2004-09-23 2006-03-29 北京有色金属研究总院 Method of removing chip oxide film edge and its device
CN101339901A (en) * 2007-07-02 2009-01-07 北京有色金属研究总院 Oxide film on wafer surface removing process and apparatus
CN201910408U (en) * 2010-12-10 2011-07-27 北京有色金属研究总院 Removing device of oxide film at 8-inch wafer notch

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