CN201620192U

CN201620192U - Multifunctional metal etching machine

Info

Publication number: CN201620192U
Application number: CN2009202148224U
Authority: CN
Inventors: 张擎雪; 荆泉; 马金辉
Original assignee: Shanghai Hua Hong NEC Electronics Co Ltd
Current assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corp
Priority date: 2009-12-18
Filing date: 2009-12-18
Publication date: 2010-11-03
Anticipated expiration: 2019-12-18

Abstract

The utility model discloses a multifunctional metal etching machine which comprises an etching chamber, an glue removing chamber, a cleaning chamber, a damping pressure-reducing chamber, an aligning chamber and a conveying chamber, wherein the etching chamber, the glue removing chamber, the cleaning chamber, the aligning chamber and the conveying chamber are arranged around the damping pressure-reducing chamber and are communicated with the damping pressure-reducing chamber so as to form a closed chamber body; sealing valves are respectively arranged among the damping pressure-reducing chamber and the etching chamber, the glue removing chamber, the conveying chamber, the aligning chamber and the cleaning chamber; one side of the conveying chamber is provided with a silicon sheet box; a first manipulator is arranged between the conveying chamber and the silicon sheet box; and the conveying chamber and the cleaning chamber are provided with an external door leading to the silicon sheet box respectively; the damping pressure-reducing chamber is internally provided with a second manipulator; and the cleaning chamber is internally provided with a silicon sheet platform. The multifunctional metal etching machine has various functions such as metal etching, glue removal or cleaning, leads the processed silicon sheet to have no etching residues, and reduces the risk of corroding aluminium wires.

Description

Multi-function metal etching machine

Technical field

The utility model relates to a kind of metal etch machine, is specifically related to a kind of multi-function metal etching machine.

Background technology

The metal etch equipment that uses in the semiconductor production possesses etching and the function of removing photoresist usually at present, and still follow-up cleaning then independently carried out in wet method equipment, like this step-by-step processing photoresist material and wash residue.

Owing to must use Cl in the etching of aluminium ₂, the extremely strong material of corrodibility such as F, so the content of the Cl in its etch by-products, F is also than higher.And the main effect of the function of removing photoresist of existing metal etch equipment is to remove photoresist material, and is but very limited to the removal ability of etch by-products.Therefore, on the silicon chip after etching apparatus is handled, aluminum steel and etch by-products coexistence, silicon chip runs into air, steam is easy to take place the aluminium corrosion, and especially when the Clean room environment changed, goods were easy to discard because of the aluminium corrosion, cause very big loss.

The utility model content

Technical problem to be solved in the utility model provides a kind of multi-function metal etching machine, and it can prevent the aluminum steel corrosion that the silicon chip after the etching causes owing to etch residues such as carrying Cl, F.

For solving the problems of the technologies described above, the technical solution of the utility model multi-function metal etching machine is:

Comprise etch chamber, the chamber of removing photoresist, cleaning chambers, buffering relief chamber, alignment cavity, transmission cavity; Etch chamber, the chamber of removing photoresist, cleaning chambers, alignment cavity, transmission cavity be arranged at the buffering relief chamber around and is communicated with the cavity that form to seal with the buffering relief chamber; Be respectively equipped with sealed valve between buffering relief chamber and etch chamber, the chamber of removing photoresist, transmission cavity, alignment cavity, the cleaning chambers; One side of transmission cavity is provided with silicon box; First mechanical manipulator is set between transmission cavity and the silicon box, and transmission cavity, cleaning chambers are respectively equipped with the external door that leads to silicon box; Be provided with second mechanical manipulator in the buffering relief chamber; Be provided with the silicon chip platform in the cleaning chambers.

Described silicon chip platform is a thermostat.

Described etch chamber, the chamber of removing photoresist, cleaning chambers are respectively one or more.

The pressure range of described buffering relief chamber is that 200mt is to 200t.

The technique effect that the utility model can reach is:

The utlity model has metal etch, remove photoresist, multiple function such as cleaning, making to handle does not have etch residue on the silicon chip of back, reduces aluminum steel corrosive risk.

Description of drawings

Below in conjunction with the drawings and specific embodiments the utility model is described in further detail:

Fig. 1 is the decomposing schematic representation of the utility model multi-function metal etching machine.

Description of reference numerals among the figure:

1 is cleaning chambers, and 2 are the chamber of removing photoresist, and 3 is etch chamber,

4 is alignment cavity, and 5 are the buffering relief chamber, and 6 is transmission cavity,

7,8 is mechanical manipulator, and 10 is silicon box.

Embodiment

As shown in Figure 1, the utility model multi-function metal etching machine comprises two etch chamber 3, two remove photoresist chamber 2, two

cleaning chambers

1,5, alignment cavity of buffering relief chamber (buffer-ch) 4, transmission cavity 6, two groups of

mechanical manipulators

7,8; Etch chamber 3, the chamber 2 of removing photoresist, cleaning chambers 1, alignment cavity 4, transmission cavity 6 be distributed in buffering relief chamber 5 around and is communicated with the cavity that form to seal with buffering relief chamber 5; Be respectively equipped with sealed valve between buffering relief chamber 5 and etch chamber 3, the chamber 2 of removing photoresist, transmission cavity 6, alignment cavity 4, the cleaning chambers 1, in case stopping leak reveals vacuum.

One side of transmission cavity 6 is provided with silicon box 10; First mechanical manipulator, 7, the first mechanical manipulators 7 are set between transmission cavity 6 and the silicon box 10 are used for the transmission of silicon chip between silicon box 10 and transmission cavity 6 or cleaning chambers 1; Transmission cavity 6 is provided with the external door that leads to silicon box 10.

Cleaning chambers 1 is provided with the external door that leads to silicon box 10.Silicon chip is postponed by sealed valve and is entered cleaning chambers 1 towards relief chamber 5, and the pressure before sealed valve is opened in the cleaning chambers 1 can be reduced to 100～200t, makes the pressure of cleaning chambers 1 approaching with buffering relief chamber 5, to make things convenient for the transmission of silicon chip; External door is used for the silicon chip of handling is put back to silicon box 10, is atmospheric condition when external door is opened in the cleaning chambers 1.

Be provided with the silicon chip platform in the cleaning chambers 1, the silicon chip platform is a thermostat, silicon temperature can be reduced to 30～40 degree.

Be provided with second mechanical manipulator, 8, the second mechanical manipulators 8 in the buffering relief chamber 5 and be used for the transmission of silicon chip between buffering relief chamber 5 and each process cavity.

Alignment cavity 4 is used for the direction of silicon chip and aims at.

The pressure range of buffering relief chamber 5 can be from 200mt (millitorr) to 200t (holder torr).

The operation pressure difference of etch chamber 3, the chamber 2 of removing photoresist, transmission cavity 6, but the vacuum tightness of etch chamber 3, the chamber 2 of removing photoresist, cleaning chambers 1, buffering relief chamber 5, alignment cavity 4, transmission cavity 6 can be regulated according to different arts demands, when silicon chip transmits between two cavitys, by regulating the pressure equilibrium that vacuum tightness makes two cavitys, thereby solved the problem of the vacuum tightness difference of two cavitys, reduced the particle influence that the air pressure instability causes.

Working process of the present utility model is as follows:

1, the external door of transmission cavity 6 is opened, and first mechanical manipulator 7 takes out pending silicon chip and is sent in the transmission cavity 6 from silicon box 10;

2, close sealed valve, the external door of transmission cavity 6, transmission cavity 6 is vacuumized, making its vacuum tightness is 200～300mt; Open the sealed valve of transmission cavity 6 then, transmission cavity 6 be communicated with buffering relief chamber 5, by second mechanical manipulator 8 with silicon chip from transmission cavity 6 deliver to buffering relief chamber 5 interior after, close the sealed valve of transmission cavity 6;

3, buffering relief chamber 5 is vacuumized, making its vacuum tightness is about 100mt; By second mechanical manipulator 8 silicon chip is postponed and to deliver to alignment cavity 4, carry out the aligning of position and direction at 4 pairs of silicon chips of alignment cavity towards relief chamber 5, position off-centre when preventing the silicon chip operation, and keep same direction when making all silicon chip operations;

4, the vacuum tightness of adjusting buffering relief chamber 5 is opened the sealed valve of etch chamber 3 to the vacuum tightness near etch chamber 3, by second mechanical manipulator 8 silicon chip is postponed and sends into etch chamber 3 towards relief chamber 5, and silicon chip is carried out etching processing;

5, after etch step was finished, the vacuum tightness of adjusting buffering relief chamber 5 was opened the sealed valve in the chamber 2 of removing photoresist to the vacuum tightness near the chamber 2 of removing photoresist, and by second mechanical manipulator 8 silicon chip was sent into the 2 pairs of silicon chips in chamber that the remove photoresist processing of removing photoresist by buffering relief chamber 5;

6, remove photoresist after step finishes, the vacuum tightness of adjusting cleaning chambers 1 makes its vacuum tightness near buffering relief chamber 5 to the 100t, opens the sealed valve of cleaning chambers 1, by second mechanical manipulator 8 silicon chip is sent in the cleaning chambers 1 by buffering relief chamber 5;

7, after silicon chip is sent into cleaning chambers 1, make cleaning chambers 1 put vacuum to atmospheric condition, silicon chip is cooled to about 40 degree on the silicon chip platform simultaneously, cleans again;

Because the operating pressure that silicon chip cleans is a normal atmosphere, be atmospheric condition in the cleaning chambers 1 when external door is opened, reduced the time that vacuumizes, can increase work efficiency.

8, after cleaning finished, first mechanical manipulator 7 was directly passed silicon chip back silicon box 10 by the external door of cleaning chambers 1.

Residual silkgum content for after the affirmation etching needs only to carry out etch step sometimes, does not need to remove photoresist, steps such as cleaning, then working process is, after above-mentioned the 4th step etching processing finishes, open the silicon chip platform of cleaning chambers 1, silicon chip is sent in the cleaning chambers 1 by buffering relief chamber 5 by second mechanical manipulator 8; After in cleaning chambers 1, cooling off and amplifying gas, directly pass silicon box 10 back, promptly can keep the cull behind the silicon chip erosion by first mechanical manipulator 7.

In actual production, the cleaning of need removing photoresist once more of the residual situation of glue takes place sometimes, then working process is, above-mentioned the 3rd step is skipped etch chamber 3 after aiming at and finishing, and directly enters the chamber 2 of removing photoresist and carries out subsequent disposal.

If need not to remove photoresist processing, then silicon chip directly to be sent into from the external door of cleaning chambers 1 and returned silicon box 10 after cleaning chambers 1 cleans by first mechanical manipulator 7, this process silicon chip does not need through transmission cavity 6 gentle to relief chamber 5, and efficiency ratio is higher.

The utlity model has the aluminum steel etching, remove photoresist and the clean function of residue, not only can finish common metal etch and the function of removing photoresist, can also in cleaning chambers 1, finish etching and the cleaning of the residue that removes photoresist, save process flow steps, improve production efficiency, reduced production cost; In addition, owing to shortened, can avoid silicon chip to be exposed in the air because foreign matter contents such as humiture, CL/F cause aluminium corrosive risk from etching into the time of cleaning.

The etch chamber 3 of the present utility model and the chamber 2 of removing photoresist are vacuum state operations, and cleaning chambers 1 is the atmospheric pressure state operation, and post-job silicon chip is directly got back to silicon box 10 from cleaning chambers 1, can raise the efficiency like this.

Each process cavity of the present utility model can be carried out the chained job of etching-remove photoresist-clean, and carries out complete metal etch and handles; Also can carry out the operation of each process cavity separately, handle respectively, can satisfy different technology and experiment demand.When confirming the pattern of photoresist material after the etching as needs, can be etch chamber 3 in after the operation, directly by cleaning chambers 1 cooling back withdrawal silicon box 10.If finding has residue not clean up, also can directly enter remove photoresist chamber 2 or cleaning chambers 1 by buffering relief chamber 5, get back in the silicon box 10 by cleaning chambers 1 at last.

Each process cavity of the present utility model (comprise etch chamber 3, the chamber 2 of removing photoresist, cleaning chambers 1) all is equipped with two on all four cavitys, can concurrent job, improve the working efficiency of equipment, also can be mutually as spare part, break down can not work the time when a chamber, another one also can continue operation.

Every kind of process cavity of the present utility model all is that one chip is handled.

Claims

1. multi-function metal etching machine is characterized in that: comprise etch chamber, the chamber of removing photoresist, cleaning chambers, buffering relief chamber, alignment cavity, transmission cavity; Etch chamber, the chamber of removing photoresist, cleaning chambers, alignment cavity, transmission cavity be arranged at the buffering relief chamber around and is communicated with the cavity that form to seal with the buffering relief chamber; Be respectively equipped with sealed valve between buffering relief chamber and etch chamber, the chamber of removing photoresist, transmission cavity, alignment cavity, the cleaning chambers; One side of transmission cavity is provided with silicon box; First mechanical manipulator is set between transmission cavity and the silicon box, and transmission cavity, cleaning chambers are respectively equipped with the external door that leads to silicon box; Be provided with second mechanical manipulator in the buffering relief chamber; Be provided with the silicon chip platform in the cleaning chambers.

2. multi-function metal etching machine according to claim 1 is characterized in that: described silicon chip platform is a thermostat.

3. multi-function metal etching machine according to claim 1 is characterized in that: described etch chamber, the chamber of removing photoresist, cleaning chambers are respectively one or more.

4. multi-function metal etching machine according to claim 1 is characterized in that: the pressure range of described buffering relief chamber is that 200mt is to 200t.