CN203794981U - Connecting device between remote plasma system and chemical vapor deposition device - Google Patents
Connecting device between remote plasma system and chemical vapor deposition device Download PDFInfo
- Publication number
- CN203794981U CN203794981U CN201420152933.8U CN201420152933U CN203794981U CN 203794981 U CN203794981 U CN 203794981U CN 201420152933 U CN201420152933 U CN 201420152933U CN 203794981 U CN203794981 U CN 203794981U
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- cavity
- pipe connecting
- segregaion valve
- chemical vapor
- remote plasma
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 238000005229 chemical vapour deposition Methods 0.000 title abstract description 24
- 238000012423 maintenance Methods 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims description 38
- 230000008878 coupling Effects 0.000 claims description 21
- 238000010168 coupling process Methods 0.000 claims description 21
- 238000005859 coupling reaction Methods 0.000 claims description 21
- 238000004140 cleaning Methods 0.000 claims description 19
- 208000035126 Facies Diseases 0.000 claims description 5
- 230000007613 environmental effect Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000010008 shearing Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract description 6
- 230000003028 elevating effect Effects 0.000 abstract 1
- 239000011797 cavity material Substances 0.000 description 87
- 239000007789 gas Substances 0.000 description 29
- 102100033714 40S ribosomal protein S6 Human genes 0.000 description 15
- 101000656896 Homo sapiens 40S ribosomal protein S6 Proteins 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 6
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005251 gamma ray Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The utility model discloses a connecting device between a remote plasma system (RPS) and a chemical vapor deposition (CVD) device. By segmentally arranging the connecting pipe between the original RPS and the CVD device cavity and additionally installing an isolating valve between the two segmental connecting pipes, the RPS is isolated from the cavity, so that the RPS is not in direct communication with the cavity, when the RPS is disassembled, no need of broken atmosphere in the cavity can be achieved by closing the isolating valve, and thus the time for elevating and cooling the cavity and the maintenance time of the cavity are saved; by virtue of the connecting device disclosed by the utility model, the problem that the cavity restarting time is too long in the prior art when the RPS is disassembled is solved, and thus the utilization rate of the device is increased.
Description
Technical field
The utility model relates to a kind of chemical vapor depsotition equipment in semiconductor machining, more specifically, relates to the coupling device between a kind of chemical vapor depsotition equipment and its remote plasma system.
Background technology
In the processing of semiconducter device, can pass through the rete of chemical Vapor deposition process (CVD) formation of deposits such as silicon oxide layer on silicon chip.In traditional hot CVD technique, provide reactant gas to silicon chip surface, in this silicon chip surface generation heat-induced chemical reactions to form the film of being wanted.In traditional plasma CVD technique, use (for example) radio frequency (RF) energy or microwave energy to form controlled plasma, with decompose and/or the reactant gas of energizing in reaction species, and then produce the film of wanting.
During CVD technique, meeting produces settling on the relevant position of the treatment chamber inside of equipment, and these settlings need to regularly be eliminated.Common cavity cleaning method comprises the etching gas using such as fluorine, by etching gas and deposition material, reacts, and removes the settling in chamber inner wall and other region.
At present, a kind of more advanced settling cleaning technique is to use remote plasma cleaning.(the Applied Materials of company of Applied Materials, Inc., the model of AMAT) producing is the CVD equipment of AMATProducer GT, its technique is under the hot environment in cavity, by to specific process gas under plasma body enhancing condition, at silicon chip surface, carry out chemical vapour deposition and form film.The feature of this equipment is that film forming speed is fast, and film equality is good.Remote plasma system (Remote Plasma System, RPS) is equipped with in top outside its board, can use remote plasma cleaning to carry out cavity cleaning.This technique is passed through high-density plasma source, distant place from silicon chip treatment chamber, be the RPS that be equipped with board top, give argon gas (Ar) gas energy nitrogen trifluoride (NF3) gas that is used for dissociating, produce fluorion, fluorion gas enters cavity, in treatment chamber, fluorion can react with settling, and this settling is etched away, to reach the object of clean cavity.
Why device fabrication business installs RPS on equipment, and uses remote plasma cleaning, is because in remote plasma cleaning, because plasma body does not contact with chamber combination, therefore less to the ion bombardment of chamber combination and/or entity damage.But RPS is Shortcomings part also, be exactly that circuit board damage rate in these parts is very high; In addition, in use, itself also can be polluted RPS.Now, just need to remove RPS, be changed or overhaul.
Aforesaid model is the equipment of AMAT Producer GT, its RPS is directly connected with equipment cavity and is arranged on above equipment, in cavity cleaning, the fluorion of the NF3 γ-ray emission being dissociated, can, by being communicated with the short metal tube between RPS and equipment cavity, directly enter reaction chamber.Therefore, in each replacing RPS, just need to open cavity, cause thus cavity to break atmosphere (outside air enters cavity).Therefore when this part replacement, need to carry out heating and cooling and maintenance to cavity, the cavity time of answering a pager's call needs about 12 hours, overlong time.Above-mentioned defect has caused the decline of board utilization ratio.
Utility model content
The purpose of this utility model is to overcome the above-mentioned defect that prior art exists, coupling device between a kind of remote plasma system and chemical vapor depsotition equipment is provided, by the pipe connecting between RPS and CVD equipment cavity, install a segregaion valve additional, RPS and cavity is isolated, make not occur between RPS and cavity direct connection, when removing RPS, close segregaion valve, realize cavity and do not need to break again atmosphere, saved the time that cavity so heating and cooling and cavity are safeguarded, solved the answer a pager's call problem of overlong time of cavity that prior art exists, thereby increased the utilization ratio of board.
For achieving the above object, the technical solution of the utility model is as follows:
Coupling device between a kind of remote plasma system and chemical vapor depsotition equipment, described remote plasma system is located at described chemical vapor depsotition equipment top, and be communicated with the cavity of described chemical vapor depsotition equipment by pipe connecting, described remote plasma system is delivered to the ionized gas dissociating in the cavity of described chemical vapor depsotition equipment and cleans cavity by described pipe connecting, it is characterized in that, described pipe connecting comprises the first pipe connecting and the second pipe connecting, described the first pipe connecting, between the second pipe connecting, install a segregaion valve additional, the cavity of described remote plasma system and described chemical vapor depsotition equipment is isolated, described remote plasma system, the first pipe connecting, segregaion valve, the second pipe connecting, chemical vapor depsotition equipment cavity connects successively, wherein, when described segregaion valve is opened, described remote plasma system is delivered to the ionized gas dissociating in the cavity of described chemical vapor depsotition equipment and cleans cavity by described the first pipe connecting, segregaion valve, the second pipe connecting, when described segregaion valve cuts out, the cavity of described chemical vapor depsotition equipment is isolated with the device external environmental facies that comprise described remote plasma system.The utility model installs a segregaion valve additional by the pipe connecting between RPS and CVD equipment cavity, and RPS and cavity is isolated, makes not occur between RPS and cavity direct connection.When RPS removes because needs overhaul or change, segregaion valve cuts out, and cavity does not just need to break atmosphere again, has saved the time that cavity so heating and cooling and cavity are safeguarded, solve the answer a pager's call problem of overlong time of cavity that prior art exists, thereby increased the utilization ratio of board.
Further, described remote plasma system, the first pipe connecting, segregaion valve, the second pipe connecting, chemical vapor depsotition equipment cavity connect by rectilinear direction successively, make the Ion Cleaning gas being dissociated by RPS, for example, from the fluorion gas of NF3 γ-ray emission, can pass through the first pipe connecting, segregaion valve, the second pipe connecting with the shortest distance of linear fashion, be delivered in the cavity of described chemical vapor depsotition equipment, improve the clenaing effect of Ion Cleaning gas.
Further, described remote plasma system, the first pipe connecting, segregaion valve, the second pipe connecting, chemical vapor depsotition equipment cavity adopt bayonet socket to connect by rectilinear direction successively, so that the dismounting of RPS when maintenance or replacing.
Further, each connecting portion between described remote plasma system, the first pipe connecting, segregaion valve, the second pipe connecting, chemical vapor depsotition equipment cavity is provided with the sealing of perfluor sealing-ring, perfluor sealing-ring has very high corrosion resistance nature, can effectively prevent that Ion Cleaning gas from leaking from connecting portion.
Further, described the first pipe connecting and the second pipe connecting are rigid metal pipe pipe connectings, for example, be the aluminium matter hard tube identical with cavity material, can avoid polluting cavity, and there is the hardness of suitable support RPS, and guarantee that Ion Cleaning gas enters cavity along straight line.
Further, the bore of described segregaion valve is identical with the caliber of described the first pipe connecting and the second pipe connecting, to avoid advancing of Ion Cleaning gas to be subject to the inconsistent obstruction of segregaion valve bore.
Further, described segregaion valve is manual segregaion valve, described manual segregaion valve is isolated by the cavity of described remote plasma system and described chemical vapor depsotition equipment, in the time of can or changing in RPS maintenance, manually easily that the cavity of chemical vapor depsotition equipment is isolated with the device external environmental facies that comprise RPS.
Further, described segregaion valve is manual segregaion valve, and described segregaion valve is provided with shearing pin, can avoid mishandle and cause the improper of segregaion valve to close.
Further, described segregaion valve is pneumatic segregaion valve, and described pneumatic segregaion valve is isolated by the cavity of described remote plasma system and described chemical vapor depsotition equipment, to can further adopt the automatic control to segregaion valve.
Further, described segregaion valve is pneumatic segregaion valve, and described pneumatic segregaion valve is connected with control module by controller, and described control module is carried out the open and close controlling to described pneumatic segregaion valve, wherein, when cleaning cavity, described control module is carried out and is opened described pneumatic segregaion valve by described controller, described remote plasma system passes through described the first pipe connecting by the ionized gas dissociating, pneumatic segregaion valve, the second pipe connecting is delivered to the interior cavity that cleans of cavity of described chemical vapor depsotition equipment, when described remote plasma system maintenance or replacing, described control module is carried out and is closed described pneumatic segregaion valve by described controller, the cavity of described chemical vapor depsotition equipment is isolated with the device external environmental facies that comprise described remote plasma system.By the execution function of control module, in RPS maintenance or while changing, can realize the automatic control that segregaion valve is opened and closed, both convenient, in the time of can preventing manual work again because of mishandle brings to segregaion valve potential safety hazard.
From technique scheme, can find out, the utility model passes through the pipe connecting subsection setup between RPS and CVD equipment cavity, and between two sections of pipe connectings, install a segregaion valve additional, RPS and cavity is isolated, make, between RPS and cavity, direct connection does not occur, when removing RPS, segregaion valve cuts out, can realize cavity does not need to break atmosphere again, has saved the time that cavity so heating and cooling and cavity are safeguarded.With RPS, within 1 year, need to change to calculate for 4 times, before adopting the utility model, the time of answering a pager's call of board needs about 12 hours; After adopting the utility model, the time shorten of answering a pager's call of board is about 2 hours, the effective rate of utilization of board can be improved to 0.45 percentage point.Therefore, the utility model has solved the answer a pager's call problem of overlong time of cavity that prior art exists, thereby has increased the utilization ratio of board.
Accompanying drawing explanation
Fig. 1 is the structural principle schematic diagram of the coupling device between the utility model remote plasma system and chemical vapor depsotition equipment.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in further detail.
In the present embodiment, refer to Fig. 1, Fig. 1 is the structural principle schematic diagram of the coupling device between the utility model remote plasma system and chemical vapor depsotition equipment.
Chemical vapor deposition (CVD) board of the present utility model can be used remote plasma cleaning, and the cavity of CVD board is cleaned.This technique is passed through high-density plasma source, distant place from silicon chip treatment chamber, be the remote plasma system (RPS) that be equipped with board top, give argon gas (Ar) gas energy nitrogen trifluoride (NF3) gas that is used for dissociating, produce fluorion, fluorion gas enters cavity, in treatment chamber, fluorion can react with settling, and this settling is etched away, to reach the object of clean cavity.
As shown in Figure 1, the coupling device of RPS of the present utility model and CVD board is located at the CVD board top between RPS6 and CVD board cavity 1, coupling device comprises the first pipe connecting 5 and the second pipe connecting 3, between the first pipe connecting 5, the second pipe connecting 3, add a pneumatic segregaion valve 4, RPS and cavity is isolated, make not occur between RPS and cavity direct connection.RPS6, the first pipe connecting 5, pneumatic segregaion valve 4, the second pipe connecting 3, cavity 1 connect successively.When pneumatic segregaion valve 4 is opened, RPS6 is delivered to by the first pipe connecting 5, pneumatic segregaion valve 4, the second pipe connecting 3 the fluorion gas dissociating in the cavity 1 of CVD board, and cavity 1 is cleaned.When pneumatic segregaion valve 4 cuts out, cavity 1 is just isolated with the CVD board outside atmosphere that comprises RPS6, makes, between RPS6 and cavity 1, direct connection does not occur, and cavity 1 is all the time in relative air-tight state.When RPS6 removes because needs overhaul or change, pneumatic segregaion valve 4 cuts out, cavity 1 does not just need to break atmosphere again, saved the time that cavity 1 so heating and cooling and cavity are safeguarded, solve the answer a pager's call problem of overlong time of cavity that prior art exists, thereby increased the utilization ratio of board.
Refer to Fig. 1, RPS6, the first pipe connecting 5, pneumatic segregaion valve 4, the second pipe connecting 3, cavity 1 connect successively by rectilinear direction, make the fluorion gas being dissociated by RPS6, can pass through the first pipe connecting 5, pneumatic segregaion valve 4, the second pipe connecting 3 with the shortest distance of linear fashion, be delivered in cavity 1, to improve the clenaing effect of Ion Cleaning gas.RPS6, the first pipe connecting 5, pneumatic segregaion valve 4, the second pipe connecting 3, cavity 1 are socketed mutually, and in each junction, adopt totally 4 of snap ring 2(, 1 of each junction) fixing, dismounting when this mode of connection can be convenient to RPS6 in maintenance or change.For preventing that hypertoxic fluorion gas from leaking out from connecting portion, totally 4 of the perfluor sealing-ring 7(with high-corrosion resistance very, 1 of each junction are housed at snap ring 2 inner rings of each connecting portion), each connecting portion is sealed.
Please continue to refer to Fig. 1, the first pipe connecting 5 and the second pipe connecting 3 are aluminium matter pipes, and material is identical with cavity material, can avoid polluting cavity, and have the hardness of suitable support RPS6, and guarantee that fluorion gas enters cavity 1 along straight line.The bore 8 of pneumatic segregaion valve 4 is identical with the caliber of the first pipe connecting 5 and the second pipe connecting 3, to avoid advancing of fluorion gas to be subject to the inconsistent obstruction of segregaion valve bore.
Refer to Fig. 1, pneumatic segregaion valve 4 is connected with the control module of board master control 9 by controller 10, can realize the long-range switching of pneumatic segregaion valve 4 is controlled automatically.Control module is carried out the open and close controlling to pneumatic segregaion valve 4, wherein, when cleaning cavity 1, control module is carried out and is opened pneumatic segregaion valve 4 by controller 10, RPS6 is delivered to the fluorion gas dissociating the interior cleaning cavity of cavity 1 of CVD board by the first pipe connecting 5, pneumatic segregaion valve 4, the second pipe connecting 3, in RPS6 maintenance or while changing, control module is carried out and is closed pneumatic segregaion valve 4 by controller 10, by cavity 1 with comprise that the board outside atmosphere of RPS6 is isolated.By the execution function of control module, in RPS6 maintenance or while changing, can realize the remote auto that pneumatic segregaion valve 4 is opened and closed and control, both convenient, in the time of can preventing manual work again because of mishandle brings to segregaion valve potential safety hazard.
It should be noted that, above-described embodiment exemplifies is the coupling device structure of a kind of single cavity C VD board when a RPS is housed.Situation while a RPS being housed respectively for dual cavity CVD board, each chamber, between the chamber that this coupling device can be communicated with it at two RPS, respectively fill respectively a set of, every set of connection devices all adds a pneumatic segregaion valve between pipe connecting, RPS and cavity is isolated, make not occur between RPS and cavity direct connection.To the situation of multi-chamber board can the rest may be inferred.Segregaion valve in coupling device also can adopt the segregaion valve of manual control to substitute the pneumatic segregaion valve that can automatically control, in the time of can or changing in RPS maintenance, manually easily by the cavity of CVD board with comprise that the board outside atmosphere of RPS is isolated.Segregaion valve can install shearing pin additional, avoids because mishandle causes, the improper of segregaion valve being closed.Because of easy to understand, therefore no longer exemplify at this.
Above-described is only preferred embodiment of the present utility model; described embodiment is not in order to limit scope of patent protection of the present utility model; therefore the equivalent structure that every utilization specification sheets of the present utility model and accompanying drawing content are done changes, and in like manner all should be included in protection domain of the present utility model.
Claims (10)
1. the coupling device between a remote plasma system and chemical vapor depsotition equipment, described remote plasma system is located at described chemical vapor depsotition equipment top, and be communicated with the cavity of described chemical vapor depsotition equipment by pipe connecting, described remote plasma system is delivered to the ionized gas dissociating in the cavity of described chemical vapor depsotition equipment and cleans cavity by described pipe connecting, it is characterized in that, described pipe connecting comprises the first pipe connecting and the second pipe connecting, described the first pipe connecting, between the second pipe connecting, install a segregaion valve additional, the cavity of described remote plasma system and described chemical vapor depsotition equipment is isolated, described remote plasma system, the first pipe connecting, segregaion valve, the second pipe connecting, chemical vapor depsotition equipment cavity connects successively, wherein, when described segregaion valve is opened, described remote plasma system is delivered to the ionized gas dissociating in the cavity of described chemical vapor depsotition equipment and cleans cavity by described the first pipe connecting, segregaion valve, the second pipe connecting, when described segregaion valve cuts out, the cavity of described chemical vapor depsotition equipment is isolated with the device external environmental facies that comprise described remote plasma system.
2. coupling device as claimed in claim 1, is characterized in that, described remote plasma system, the first pipe connecting, segregaion valve, the second pipe connecting, chemical vapor depsotition equipment cavity connect by rectilinear direction successively.
3. coupling device as claimed in claim 1, is characterized in that, described remote plasma system, the first pipe connecting, segregaion valve, the second pipe connecting, chemical vapor depsotition equipment cavity adopt bayonet socket to connect by rectilinear direction successively.
4. the coupling device as described in claim 1,2 or 3, is characterized in that, each connecting portion between described remote plasma system, the first pipe connecting, segregaion valve, the second pipe connecting, chemical vapor depsotition equipment cavity is provided with the sealing of perfluor sealing-ring.
5. the coupling device as described in claim 1,2 or 3, is characterized in that, described the first pipe connecting and the second pipe connecting are rigid metal pipe pipe connectings.
6. the coupling device as described in claim 1,2 or 3, is characterized in that, the bore of described segregaion valve is identical with the caliber of described the first pipe connecting and the second pipe connecting.
7. the coupling device as described in claim 1,2 or 3, is characterized in that, described segregaion valve is manual segregaion valve, and described manual segregaion valve is isolated by the cavity of described remote plasma system and described chemical vapor depsotition equipment.
8. coupling device as claimed in claim 7, is characterized in that, described segregaion valve is manual segregaion valve, and described segregaion valve is provided with shearing pin.
9. the coupling device as described in claim 1,2 or 3, is characterized in that, described segregaion valve is pneumatic segregaion valve, and described pneumatic segregaion valve is isolated by the cavity of described remote plasma system and described chemical vapor depsotition equipment.
10. the coupling device as described in claim 1,2 or 3, is characterized in that, described segregaion valve is pneumatic segregaion valve, and described pneumatic segregaion valve is connected with control module by controller, and described control module is carried out the open and close controlling to described pneumatic segregaion valve, wherein, when cleaning cavity, described control module is carried out and is opened described pneumatic segregaion valve by described controller, described remote plasma system passes through described the first pipe connecting by the ionized gas dissociating, pneumatic segregaion valve, the second pipe connecting is delivered to the interior cavity that cleans of cavity of described chemical vapor depsotition equipment, when described remote plasma system maintenance or replacing, described control module is carried out and is closed described pneumatic segregaion valve by described controller, the cavity of described chemical vapor depsotition equipment is isolated with the device external environmental facies that comprise described remote plasma system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420152933.8U CN203794981U (en) | 2014-03-31 | 2014-03-31 | Connecting device between remote plasma system and chemical vapor deposition device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420152933.8U CN203794981U (en) | 2014-03-31 | 2014-03-31 | Connecting device between remote plasma system and chemical vapor deposition device |
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| CN203794981U true CN203794981U (en) | 2014-08-27 |
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| CN201420152933.8U Expired - Lifetime CN203794981U (en) | 2014-03-31 | 2014-03-31 | Connecting device between remote plasma system and chemical vapor deposition device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104962880A (en) * | 2015-07-31 | 2015-10-07 | 合肥京东方光电科技有限公司 | Vapor deposition equipment |
| CN110899271A (en) * | 2018-09-17 | 2020-03-24 | 北京北方华创微电子装备有限公司 | Adjusting device of remote plasma source and remote plasma source cleaning system |
| CN111599706A (en) * | 2020-05-26 | 2020-08-28 | 上海华虹宏力半导体制造有限公司 | Method for online detecting cavity leakage rate and semiconductor process machine |
| CN116254518A (en) * | 2023-05-10 | 2023-06-13 | 上海陛通半导体能源科技股份有限公司 | Preparation method of silicon nitride film |
-
2014
- 2014-03-31 CN CN201420152933.8U patent/CN203794981U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104962880A (en) * | 2015-07-31 | 2015-10-07 | 合肥京东方光电科技有限公司 | Vapor deposition equipment |
| CN104962880B (en) * | 2015-07-31 | 2017-12-01 | 合肥京东方光电科技有限公司 | A kind of vapor deposition apparatus |
| US10329666B2 (en) | 2015-07-31 | 2019-06-25 | Boe Technology Group Co., Ltd. | Vapor deposition apparatus |
| CN110899271A (en) * | 2018-09-17 | 2020-03-24 | 北京北方华创微电子装备有限公司 | Adjusting device of remote plasma source and remote plasma source cleaning system |
| CN110899271B (en) * | 2018-09-17 | 2021-10-15 | 北京北方华创微电子装备有限公司 | Adjusting device of remote plasma source and remote plasma source cleaning system |
| CN111599706A (en) * | 2020-05-26 | 2020-08-28 | 上海华虹宏力半导体制造有限公司 | Method for online detecting cavity leakage rate and semiconductor process machine |
| CN116254518A (en) * | 2023-05-10 | 2023-06-13 | 上海陛通半导体能源科技股份有限公司 | Preparation method of silicon nitride film |
| CN116254518B (en) * | 2023-05-10 | 2023-08-18 | 上海陛通半导体能源科技股份有限公司 | Preparation method of silicon nitride film |
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