CN113862644A - Film coating equipment - Google Patents
Film coating equipment Download PDFInfo
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- CN113862644A CN113862644A CN202111105642.4A CN202111105642A CN113862644A CN 113862644 A CN113862644 A CN 113862644A CN 202111105642 A CN202111105642 A CN 202111105642A CN 113862644 A CN113862644 A CN 113862644A
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- reaction
- reaction cavity
- gas
- reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The application discloses coating equipment includes: a reaction chamber; a temperature control section; the first gas supply part is used for supplying first coating gas to the reaction cavity when the temperature control part controls the temperature in the reaction cavity within a first preset temperature range, so that the atomic layer deposition reaction/plasma enhanced atomic layer deposition reaction is generated in the reaction cavity; a vacuum system; the second gas supply part is used for supplying second coating gas to the reaction cavity when the temperature control part controls the temperature in the reaction cavity within a second preset temperature range; and the power supply is used for controlling the vacuum degree in the reaction cavity in a preset vacuum degree range in the vacuum system, and after the second gas supply part provides the second coating gas for the reaction cavity, feeding voltage into the reaction cavity so as to generate plasma in the reaction cavity to enhance the chemical vapor deposition reaction. The coating equipment can perform an atomic layer deposition process/a plasma enhanced atomic layer deposition process and also can perform a plasma enhanced chemical vapor deposition process.
Description
Technical Field
The application relates to the technical field of coating, in particular to coating equipment.
Background
The coating technology is a technology commonly used for growing films in photoelectric industries and semiconductor industries such as touch panels, solar cells and the like, and specifically comprises various coating technologies such as a plasma enhanced atomic layer deposition process, an atomic layer deposition process and the like.
At present, one coating device can only realize one coating process, when two different coating processes are needed to grow different films on the same substrate, the substrate needs to be processed in different coating devices, and when the substrate arrives at another coating device from one coating device, the conveying time is necessary, and the production efficiency and the production yield are reduced due to the existence of the conveying time.
Disclosure of Invention
The application provides a coating device, which can perform an atomic layer deposition process/a plasma enhanced atomic layer deposition process and also can perform a plasma enhanced chemical vapor deposition process.
The embodiment of the application provides a coating equipment, includes: a reaction chamber; the temperature control part is connected with the reaction cavity and is used for controlling the temperature in the reaction cavity; the first gas supply part is communicated with the reaction cavity and used for supplying first coating gas to the reaction cavity when the temperature control part controls the temperature in the reaction cavity within a first preset temperature range, so that the atomic layer deposition reaction/plasma enhanced atomic layer deposition reaction is generated in the reaction cavity; the vacuum system is connected with the reaction cavity and is used for controlling the vacuum degree in the reaction cavity; the second gas supply part is communicated with the reaction cavity and is used for supplying second coating gas to the reaction cavity when the temperature control part controls the temperature in the reaction cavity within a second preset temperature range; and the power supply is connected with the reaction cavity and used for controlling the vacuum degree in the reaction cavity within a preset vacuum degree range by the vacuum system, and after the second coating gas is provided for the reaction cavity by the second gas supply part, voltage is fed into the reaction cavity, so that a plasma enhanced chemical vapor deposition reaction is generated in the reaction cavity.
The first gas supply part comprises a first gas pipeline and a second gas pipeline which are simultaneously communicated with the reaction cavity, and the first gas pipeline and the second gas pipeline are used for sequentially introducing different process gases into the reaction cavity.
Wherein, the coating equipment still includes: a source cabinet connected to the first gas line or the second gas line.
The first gas supply part further comprises a third gas pipeline communicated with the reaction cavity and used for providing cleaning gas for the reaction cavity so as to clean the reaction cavity.
The second gas supply part comprises at least two fourth gas pipelines communicated with the reaction chamber, and the at least two fourth gas pipelines are respectively used for providing different process gases for the reaction chamber.
Wherein the vacuum system comprises: the vacuum pump is communicated with the reaction cavity; and the control assembly is arranged on an evacuation pipeline communicated with the reaction cavity by the vacuum pump and is used for controlling the opening/on-off of the evacuation pipeline.
Wherein the control assembly comprises an angle valve for controlling the on-off of the evacuation conduit.
The control assembly further comprises a butterfly valve used for controlling the opening of the evacuation pipeline to enable the vacuum degree in the reaction cavity to reach a target value.
Wherein the vacuum system further comprises: and the vacuum gauge is connected with the reaction cavity and used for monitoring the vacuum degree in the reaction cavity.
Wherein the power supply is a radio frequency power supply.
The beneficial effects are that: the coating equipment comprises a reaction cavity, a temperature control part, a first gas supply part, a vacuum system, a second gas supply part and a power supply, can perform atomic layer deposition process/plasma enhanced atomic layer deposition process, and can also perform plasma enhanced chemical vapor deposition process, so that the process can be reduced, the waiting time between two processes is shortened, and the production efficiency and the yield are improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts. Wherein:
FIG. 1 is a schematic structural diagram of one embodiment of a coating apparatus according to the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of a coating apparatus 1000 of the present application, which includes a reaction chamber 1100, a temperature control unit (not shown), a first gas supply unit 1200, a vacuum system 1300, a second gas supply unit 1400, and a power supply 1500.
The reaction chamber 1100 is used for carrying a workpiece to be coated, wherein the workpiece to be coated placed in the reaction chamber 1100 is placed on a carrier, and in an application scene, the carrier is a graphite boat.
The temperature control part is connected to the reaction chamber 1100 and controls the temperature of the reaction chamber 1100.
The first gas supply part 1200 is communicated with the reaction chamber 1100, and is configured to supply a first coating gas to the reaction chamber 1100 when the temperature control part controls the temperature in the reaction chamber 1100 within a first preset temperature range, so that atomic layer deposition reaction (ALD)/plasma enhanced atomic layer deposition reaction (PEALD) is generated in the reaction chamber 1100, and thus the atomic layer deposition process/plasma enhanced atomic layer deposition process is completed in the reaction chamber 1100. The first predetermined temperature range may be 50 to 500 ℃, and the first coating gas may include one, two, three, or more process gases.
The vacuum system 1300 is in communication with the reaction chamber 1100 for controlling the degree of vacuum within the reaction chamber 1100.
The second gas supply unit 1400 is in communication with the reaction chamber 1100, and is configured to supply a second coating gas to the reaction chamber 1100 when the temperature control unit controls the temperature in the reaction chamber 1100 within a second preset temperature range. The second predetermined temperature range may be 100 to 600 ℃, and the second coating gas may include one, two, three, or more process gases.
The power supply 1500 is connected to the reaction chamber 1100, and configured to control a vacuum degree in the reaction chamber 1100 to a predetermined vacuum degree by the vacuum system 1300, and after the second gas supply 1400 supplies the second coating gas to the reaction chamber 1100, feed a voltage into the reaction chamber 1100, so that a plasma enhanced chemical vapor deposition reaction (PECVD) is generated in the reaction chamber 1100, thereby completing a plasma enhanced chemical vapor deposition process in the reaction chamber 1100. The power supply 1500 may specifically be a radio frequency power supply.
Since the reaction temperature of the atomic layer deposition reaction (ALD)/the plasma enhanced atomic layer deposition reaction (PEALD) is usually lower than the reaction temperature of the plasma enhanced chemical vapor deposition reaction (PECVD), the coating apparatus 1000 may perform the atomic layer deposition process (ALD)/the plasma enhanced atomic layer deposition Process (PEALD) first and then perform the plasma enhanced chemical vapor deposition Process (PECVD) when coating.
In consideration of the fact that the ald/pecvd is a cyclic process, and a single cycle can be divided into a first half process and a second half process, wherein the first half process and the second half process use different process gases, so as to avoid confusion of gases used in the process, as shown in fig. 1, the first gas supply portion 1200 includes a first gas pipe 1210 and a second gas pipe 1220.
The first gas line 1210 and the second gas line 1220 are simultaneously connected to the reaction chamber 1100, and are configured to sequentially provide different process gases to the reaction chamber, wherein one of the first gas line 1210 and the second gas line 1220 is configured to provide the process gas used in the first half process of a single cycle to the reaction chamber 1100, and the other one of the first gas line 1210 and the second gas line 1220 is configured to provide the process gas used in the second half process of a single cycle to the reaction chamber 1100, and for convenience of description, the first gas line 1210 is configured to provide the process gas used in the first half process to the reaction chamber 1100, and the second gas line 1220 is configured to provide the process gas used in the second half process to the reaction chamber 1100. Meanwhile, for convenience of explanation, the gas used in the first half process is referred to as precursor 1, and the gas used in the second half process is referred to as precursor 2.
In order to avoid the effect of the residual gas from the first half process on the second half process and the effect of the residual gas from the second half process on the first half process in the next cycle, referring to fig. 1, the first gas supply 1200 further includes a third gas line 1230.
The third gas line 1230 is used for providing a purge gas to the reaction chamber 1100 to purge the reaction chamber 1100 after the first half of the process is finished (specifically, to purge the reaction chamber 1100 of the excessive reaction source and the excessive reaction byproducts), or providing a purge gas to the reaction chamber 1100 to purge the reaction chamber 1100 after the second half of the process is finished (specifically, to purge the reaction chamber 1100 of the excessive reaction source and the excessive reaction byproducts).
In order to protect the gas in the first gas pipeline 1210 and improve the safety performance during the production process, as the gas used in the first half process is usually a high-risk gas, the filming apparatus 1000 further includes a source cabinet 1600 connected to the first gas pipeline 1210, with reference to fig. 1. It is understood that the second gas line 1220 is connected to the source cabinet 1600 when the second gas line 1220 supplies the process gas for the first half process. While in other embodiments the number of source cabinets 1600 is two, both first gas line 1210 and second gas line 1220 are connected to a corresponding source cabinet 1600.
With continued reference to fig. 1, similar to the first gas supply 1200, since the Plasma Enhanced Chemical Vapor Deposition (PECVD) reaction also requires the participation of a plurality of process gases, the second gas supply 1400 is provided to include at least two fourth gas lines 1410 in communication with the reaction chamber 1100, and the at least two fourth gas lines 1410 are respectively used to provide different process gases to the reaction chamber 1100. In other embodiments, to protect the process gas in fourth gas lines 1410, a corresponding source cabinet 1600 may be connected to each fourth gas line 1410.
With continued reference to fig. 1, in the present embodiment, the vacuum system 1300 includes a vacuum pump 1310; the control component 1320, the control component 1320 is disposed on the evacuation pipeline where the vacuum pump 1310 is communicated with the reaction chamber 1100, and is used for controlling the opening/on/off of the evacuation pipeline; and a vacuum gauge 1330.
Specifically, the control unit 1320 controls the opening/closing of the evacuation pipe between the vacuum pump 1310 and the reaction chamber 1100 when atomic layer deposition reaction (ALD)/plasma enhanced atomic layer deposition reaction (PEALD) is performed in the reaction chamber 1100, and the control unit 1310 controls the opening/conduction of the evacuation pipe between the vacuum pump 1300 and the reaction chamber 1100 when plasma enhanced chemical vapor deposition reaction (PECVD) is required to be performed in the reaction chamber 1100.
With continued reference to FIG. 1, the control assembly 1320 includes an angle valve 1321 and a butterfly valve 1322.
The angle valve 1321 is only in a fully open state or a fully closed state, and the butterfly valve 1322 can control the opening range, for example, the opening range of the butterfly valve 1322 is 100%, i.e., the fully open state, or the opening range of the butterfly valve 1322 is 50%, i.e., the half open state.
Meanwhile, a vacuum gauge 1330 is connected to the reaction chamber 1100 for monitoring the degree of vacuum in the reaction chamber 1100, and specifically, the vacuum gauge 1330 may visually present the degree of vacuum in the reaction chamber 1100 so as to more conveniently control the degree of vacuum in the reaction chamber 1100.
For a better understanding of the coating apparatus 1000, the operation of the coating apparatus 1000 will be described in detail as follows:
first, the temperature control part is used to control the temperature in the reaction chamber 1100, and when the temperature in the reaction chamber 1100 is controlled within a first preset temperature range, precursor 1 enters the reaction chamber 1100 from the first gas line 1210, to perform the first half process, then, after the first half of the process is completed, purge gas is introduced into the reaction chamber 1100 through the third gas line 1230, to clean the excess precursor 1 and reaction byproducts in the reaction chamber 1100, ensure the cleanness of the reaction chamber 1100, the precursor 2 then enters the reaction chamber 1100 from the second gas line 1220, to be processed in the second half of the process, then, after the second half of the process is completed, the purge gas enters the reaction chamber 1100 through the third gas line 1230, to clean the excess precursor 2 and reaction byproducts in the reaction chamber 1100, thereby ensuring the cleanness of the reaction chamber 1100 and completing a standard cycle of the ald/pecvd process.
And then repeating the process until a certain number of standard cycles are completed, namely the deposition of the atomic layer deposition process/the plasma enhanced atomic layer deposition process is completed on the workpiece to be coated.
Then the vacuum pump 1310 is used for vacuumizing from the reaction chamber 1100, the temperature control part is used for adjusting the temperature in the reaction chamber 1100, when the temperature in the reaction chamber 1100 reaches a second preset temperature range, the process gas enters the reaction chamber 1100 from at least two fourth gas pipelines 1410, then when the vacuum degree in the reaction chamber 1100 is controlled within a preset vacuum degree range, the power supply 1500 starts to discharge, and then the plasma active groups are polymerized on the workpiece to be coated to produce a film, so that the deposition of the plasma enhanced chemical vapor deposition process is completed.
From the above, it can be seen that the coating apparatus 1000 in the present application can perform both the ald process/the pecvd process and the pecvd process, thereby shortening the process and the equipment and labor costs during the production process, reducing the waiting time between the ald process/the pecvd process and the pecvd process, and improving the production efficiency and the yield.
It is understood that the coating apparatus 1000 may also perform only the atomic layer deposition process/the plasma enhanced atomic layer deposition process, or only the plasma enhanced chemical vapor deposition process.
The above description is only for the purpose of illustrating embodiments of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application or are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.
Claims (9)
1. A plating apparatus, characterized by comprising:
a reaction chamber;
the temperature control part is connected with the reaction cavity and is used for controlling the temperature in the reaction cavity;
the first gas supply part is communicated with the reaction cavity and used for supplying first coating gas to the reaction cavity when the temperature control part controls the temperature in the reaction cavity within a first preset temperature range, so that the atomic layer deposition reaction/plasma enhanced atomic layer deposition reaction is generated in the reaction cavity;
the vacuum system is connected with the reaction cavity and is used for controlling the vacuum degree in the reaction cavity;
the second gas supply part is communicated with the reaction cavity and is used for supplying second coating gas to the reaction cavity when the temperature control part controls the temperature in the reaction cavity within a second preset temperature range;
and the power supply is connected with the reaction cavity and used for controlling the vacuum degree in the reaction cavity within a preset vacuum degree range by the vacuum system, and after the second coating gas is provided for the reaction cavity by the second gas supply part, voltage is fed into the reaction cavity, so that a plasma enhanced chemical vapor deposition reaction is generated in the reaction cavity.
2. The plating apparatus according to claim 1, wherein the first gas supply section comprises a first gas line and a second gas line that are simultaneously communicated with the reaction chamber, and the first gas line and the second gas line are used for sequentially introducing different process gases into the reaction chamber.
3. The plating device according to claim 2, further comprising:
a source cabinet connected to the first gas line or the second gas line.
4. The plating apparatus according to claim 2, wherein the first gas supply portion further comprises a third gas line communicating with the reaction chamber for supplying a purge gas to the reaction chamber to purge the reaction chamber.
5. The plating apparatus according to claim 1, wherein the second gas supply section comprises at least two fourth gas lines communicating with the reaction chamber, the at least two fourth gas lines being for supplying different process gases to the reaction chamber, respectively.
6. The plating apparatus according to claim 1, wherein the vacuum system comprises:
the vacuum pump is communicated with the reaction cavity;
the control assembly is arranged on an evacuation pipeline communicated with the reaction cavity by the vacuum pump and is used for controlling the opening/on-off of the evacuation pipeline;
and the vacuum gauge is connected with the reaction cavity and used for monitoring the vacuum degree in the reaction cavity.
7. The plating apparatus according to claim 6, wherein the control unit comprises an angle valve for controlling on/off of the evacuation pipe.
8. The plating apparatus according to claim 7, wherein the control unit further comprises a butterfly valve for controlling an opening degree of the evacuation pipe so that a degree of vacuum in the reaction chamber reaches a target value.
9. The plating device according to claim 1, wherein the power supply is a radio frequency power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111105642.4A CN113862644A (en) | 2021-09-22 | 2021-09-22 | Film coating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111105642.4A CN113862644A (en) | 2021-09-22 | 2021-09-22 | Film coating equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113862644A true CN113862644A (en) | 2021-12-31 |
Family
ID=78993144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111105642.4A Pending CN113862644A (en) | 2021-09-22 | 2021-09-22 | Film coating equipment |
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| CN (1) | CN113862644A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114975178A (en) * | 2022-05-18 | 2022-08-30 | 江苏微导纳米科技股份有限公司 | Temperature control assembly, semiconductor processing chamber and semiconductor processing equipment |
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| US20160369402A1 (en) * | 2014-02-23 | 2016-12-22 | Entegris, Inc. | Cobalt precursors |
| CN108149225A (en) * | 2018-02-06 | 2018-06-12 | 江苏微导纳米装备科技有限公司 | A kind of vacuum reaction device and reaction method |
| CN109680262A (en) * | 2019-02-20 | 2019-04-26 | 江苏微导纳米装备科技有限公司 | A kind of method, apparatus and application of atomic layer deposition plated film |
| CN109943826A (en) * | 2018-09-11 | 2019-06-28 | 东南大学 | A kind of multi-functional composite deposition equipment and its preparation process |
| JPWO2021090794A1 (en) * | 2019-11-06 | 2021-05-14 |
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2021
- 2021-09-22 CN CN202111105642.4A patent/CN113862644A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160369402A1 (en) * | 2014-02-23 | 2016-12-22 | Entegris, Inc. | Cobalt precursors |
| CN108149225A (en) * | 2018-02-06 | 2018-06-12 | 江苏微导纳米装备科技有限公司 | A kind of vacuum reaction device and reaction method |
| CN109943826A (en) * | 2018-09-11 | 2019-06-28 | 东南大学 | A kind of multi-functional composite deposition equipment and its preparation process |
| CN109680262A (en) * | 2019-02-20 | 2019-04-26 | 江苏微导纳米装备科技有限公司 | A kind of method, apparatus and application of atomic layer deposition plated film |
| JPWO2021090794A1 (en) * | 2019-11-06 | 2021-05-14 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114975178A (en) * | 2022-05-18 | 2022-08-30 | 江苏微导纳米科技股份有限公司 | Temperature control assembly, semiconductor processing chamber and semiconductor processing equipment |
| CN114975178B (en) * | 2022-05-18 | 2024-04-05 | 江苏微导纳米科技股份有限公司 | Temperature control assembly, semiconductor processing chamber and semiconductor processing equipment |
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