CN101880609A - Silicon wafer cleaning agent and use method thereof - Google Patents
Silicon wafer cleaning agent and use method thereof Download PDFInfo
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- CN101880609A CN101880609A CN 201010214595 CN201010214595A CN101880609A CN 101880609 A CN101880609 A CN 101880609A CN 201010214595 CN201010214595 CN 201010214595 CN 201010214595 A CN201010214595 A CN 201010214595A CN 101880609 A CN101880609 A CN 101880609A
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Abstract
The invention discloses a silicon wafer cleaning agent and a use method thereof. The silicon wafer cleaning agent consists of oxidant, organic base, penetrant and water, and the volume ratio of the components is as follows: oxidant : organic base : penetrant : water equal to 0.02-0.1:1-4:0.5-1:30-50; the standard electrode potential of the oxidant is not less than 1.7V, and the oxidant is ozone or hydrogen peroxide; the organic base is selected from one or more of the following components: triethanolamine, sodium alkoxide, sodium alkyl, lithium alkyl, lithium amide and quaternary ammonium base; and the penetrant is fatty alcohol-polyoxyethylene ether or sodium diethylhexyl sulfosuccinate. The cleaning agent can be simply operated, silicon wafer cleaning does not become complex, the cost is low, no pollution is generated, and the cleaning agent cannot bring impurities to stain silicon wafers, and is environment-friendly.
Description
Technical field
What the present invention relates to is clean-out system in a kind of silicon wafer to manufacture process, in particular a kind of silicon slice detergent and using method thereof.
Background technology
The solar silicon wafers surface contaminant mainly includes the machine thing, particle contamination and metal ion are stained etc., they are present in the autoxidation film of the surface of silicon chip or silicon chip in the mode of physical adsorption and chemistry usually, there are two kinds of short texture and dense structures usually in the silicon chip surface silicon dioxide layer, the general nature zone of oxidation mostly is short texture, and adopts strong oxidizer or high temperature etc. can obtain compact oxidation layer.Silicon chip is exposed in air or the water, generally can react, and reaction equation is respectively: Si+O
2=SiO
2, Si+2H
2O=SiO
2+ 2H
2↑, the silicon-dioxide that these reactions generate is loose and porous structure normally, therefore can't stop air or water to contact with silicon, when silicon chip cleans, silicon chip is present in the alkaline cleaner, and alkali lye can pass zone of oxidation and be penetrated into silicon chip surface, reacts with silicon, the uncontrollable reaction of alkali and silicon can make silicon chip surface blackspot occur, problems such as hickie.Adopt ozone and pasc reaction to obtain fine and close silicon dioxide layer, and the thickness of silicon dioxide layer has only tens nanometers, the loss of silicon is very little, the effect of strong oxidizer processing silica flour is similar to the passivation of metal, and this fine and close silicon dioxide layer can effectively stop the inner silicon and the reaction of basic solution.In addition, the impurity of silicon chip surface is owing in the formation of zone of oxidation is wrapped in, and along with zone of oxidation is corroded, impurity also comes off thereupon.
Summary of the invention
Goal of the invention: the objective of the invention is to overcome the deficiencies in the prior art, a kind of silicon slice detergent and using method thereof are provided, obtain fine and close silicon dioxide layer, the surface of silicon chip is formed the protective layer of densification by oxygenant and pasc reaction.
Technical scheme: the present invention is achieved by the following technical solutions, the present invention includes oxygenant, organic bases, permeate agent and water, and the volume ratio of each component is an oxygenant: organic bases: permeate agent: water=0.02～0.1: 1～4: 0.5～1: 30～50;
The standard potential of described oxygenant is not less than 1.7V, is ozone or hydrogen peroxide;
Described organic bases is selected from one or more in the following component: trolamine, sodium alkoxide, alkyl sodium, hydrocarbyl lithium, Lithamide and quaternary ammonium hydroxide;
Described permeate agent is fatty alcohol-polyoxyethylene ether or maleic acid di-sec-octyl sodium sulfonate.
A kind of using method of silicon slice detergent may further comprise the steps: (1) immerses 200～500s in the described silicon slice detergent of claim 1 with silicon chip, and the surface of silicon chip grows silicon dioxide layer;
(2) to clean-out system ultra-sonic oscillation 100～300s, temperature is 50～60 ℃, and frequency is 40KHz.
Principle of work of the present invention is: oxygenant and pasc reaction obtain fine and close silicon dioxide layer, and the thickness of silicon dioxide layer has only tens nanometers, and the loss of silicon is very little, and this fine and close silicon dioxide layer can effectively stop the inner silicon and the reaction of basic solution.In addition, the impurity of silicon chip surface is owing in the formation of zone of oxidation is wrapped in, and along with zone of oxidation is corroded, impurity also comes off thereupon.
Beneficial effect: the clean-out system that the present invention uses is simple to operate, and not cleaning to silicon chip increases loaded down with trivial details step, and cost is low, and is pollution-free, can not bring the impurity that pollutes silicon chip into, environmental sound.
Embodiment
Below embodiments of the invention are elaborated, present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
Embodiment 1
Present embodiment comprises ozone, trolamine, fatty alcohol-polyoxyethylene ether and water, and the volume ratio of each component is an ozone: trolamine: fatty alcohol-polyoxyethylene ether: water=0.05: 4: 0.5: 30;
A kind of using method of silicon slice detergent may further comprise the steps:
(1) silicon chip is immersed 200～500s in the above-mentioned silicon slice detergent, the surface of silicon chip grows silicon dioxide layer;
(2) to clean-out system ultra-sonic oscillation 300s, temperature is 60 ℃, and frequency is 40KHz.
Embodiment 2
Present embodiment comprises hydrogen peroxide, sodium alkoxide, maleic acid di-sec-octyl sodium sulfonate and water, and the volume ratio of each component is a hydrogen peroxide: sodium alkoxide: maleic acid di-sec-octyl sodium sulfonate: water=0.1: 3: 0.7: 45;
A kind of using method of silicon slice detergent may further comprise the steps:
(1) silicon chip is immersed 300s in the above-mentioned silicon slice detergent, the surface of silicon chip grows silicon dioxide layer;
(2) to clean-out system ultra-sonic oscillation 200s, temperature is 50 ℃, and frequency is 40KHz.
Embodiment 3
Present embodiment comprises ozone, Lithamide, fatty alcohol-polyoxyethylene ether and water, and the volume ratio of each component is an ozone: Lithamide: fatty alcohol-polyoxyethylene ether: water=0.08: 4: 0.6: 50;
A kind of using method of silicon slice detergent may further comprise the steps:
(1) silicon chip is immersed 250s in the above-mentioned silicon slice detergent, the surface of silicon chip grows silicon dioxide layer;
(2) to clean-out system ultra-sonic oscillation 300s, temperature is 60 ℃, and frequency is 40KHz.
Embodiment 4
Present embodiment comprises ozone, quaternary ammonium hydroxide, maleic acid di-sec-octyl sodium sulfonate and water, and the volume ratio of each component is an ozone: quaternary ammonium hydroxide: maleic acid di-sec-octyl sodium sulfonate: water=0.1: 4: 0.1: 50;
A kind of using method of silicon slice detergent may further comprise the steps:
(1) silicon chip is immersed 200s in the above-mentioned silicon slice detergent, the surface of silicon chip grows silicon dioxide layer;
(2) to clean-out system ultra-sonic oscillation 300s, temperature is 50 ℃, and frequency is 40KHz.
Claims (2)
1. silicon slice detergent, it is characterized in that: comprise oxygenant, organic bases, permeate agent and water, the volume ratio of each component is an oxygenant: organic bases: permeate agent: water=0.02～0.1: 1～4: 0.5～1: 30～50;
The standard potential of described oxygenant is not less than 1.7V, is ozone or hydrogen peroxide;
Described organic bases is selected from one or more in the following component: trolamine, sodium alkoxide, alkyl sodium, hydrocarbyl lithium, Lithamide and quaternary ammonium hydroxide;
Described permeate agent is fatty alcohol-polyoxyethylene ether or maleic acid di-sec-octyl sodium sulfonate.
2. the using method of a kind of silicon slice detergent according to claim 1 is characterized in that: may further comprise the steps:
(1) silicon chip is immersed 200～500s in the described silicon slice detergent of claim 1, the surface of silicon chip grows silicon dioxide layer;
(2) to clean-out system ultra-sonic oscillation 100～300s, temperature is 50～60 ℃, and frequency is 40KHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010214595 CN101880609A (en) | 2010-06-30 | 2010-06-30 | Silicon wafer cleaning agent and use method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010214595 CN101880609A (en) | 2010-06-30 | 2010-06-30 | Silicon wafer cleaning agent and use method thereof |
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| CN101880609A true CN101880609A (en) | 2010-11-10 |
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| CN 201010214595 Pending CN101880609A (en) | 2010-06-30 | 2010-06-30 | Silicon wafer cleaning agent and use method thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102660409A (en) * | 2012-05-14 | 2012-09-12 | 陕西省石油化工研究设计院 | Cleaning agent for silicon wafer of photovoltaic cell and preparation method for cleaning agent |
| CN103540441A (en) * | 2013-10-30 | 2014-01-29 | 合肥市华美光电科技有限公司 | Degreasing circuit board cleaning agent and preparation method thereof |
| CN104152296A (en) * | 2014-08-08 | 2014-11-19 | 深圳市爱康泉水处理服务有限公司 | Composition for cleaning agent, cleaning agent and use of cleaning agent |
| CN104194985A (en) * | 2014-08-08 | 2014-12-10 | 深圳市爱康泉水处理服务有限公司 | Composition for cleaning agent, cleaning agent and application of cleaning agent |
| CN106591009A (en) * | 2016-12-27 | 2017-04-26 | 常州协鑫光伏科技有限公司 | Cleaning agent for silicon slice alkali cleaning |
| CN108659915A (en) * | 2017-03-28 | 2018-10-16 | 常州协鑫光伏科技有限公司 | Silicon chip cutting anti-settling agent and mortar cutting fluid |
| CN114606392A (en) * | 2022-03-16 | 2022-06-10 | 贵研资源（易门）有限公司 | Method for separating platinum group metal-containing coating in waste VOCs metal carrier catalyst |
| CN114854501A (en) * | 2022-05-12 | 2022-08-05 | 常州时创能源股份有限公司 | Additive for cleaning silicon wafer and application thereof |
| CN114854500A (en) * | 2022-05-12 | 2022-08-05 | 常州时创能源股份有限公司 | Additive and cleaning solution for cleaning silicon wafer and cleaning method for silicon wafer after texturing |
| CN114914167A (en) * | 2022-07-11 | 2022-08-16 | 广州粤芯半导体技术有限公司 | Cleaning solution monitoring method and system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102660409A (en) * | 2012-05-14 | 2012-09-12 | 陕西省石油化工研究设计院 | Cleaning agent for silicon wafer of photovoltaic cell and preparation method for cleaning agent |
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| CN103540441A (en) * | 2013-10-30 | 2014-01-29 | 合肥市华美光电科技有限公司 | Degreasing circuit board cleaning agent and preparation method thereof |
| CN104152296B (en) * | 2014-08-08 | 2018-04-10 | 深圳市爱康泉水处理服务有限公司 | A kind of cleaning agent composition and cleaning agent and its application |
| CN104194985A (en) * | 2014-08-08 | 2014-12-10 | 深圳市爱康泉水处理服务有限公司 | Composition for cleaning agent, cleaning agent and application of cleaning agent |
| CN104152296A (en) * | 2014-08-08 | 2014-11-19 | 深圳市爱康泉水处理服务有限公司 | Composition for cleaning agent, cleaning agent and use of cleaning agent |
| CN104194985B (en) * | 2014-08-08 | 2018-04-10 | 深圳市爱康泉水处理服务有限公司 | A kind of cleaning agent composition and cleaning agent and its application |
| CN106591009A (en) * | 2016-12-27 | 2017-04-26 | 常州协鑫光伏科技有限公司 | Cleaning agent for silicon slice alkali cleaning |
| CN108659915A (en) * | 2017-03-28 | 2018-10-16 | 常州协鑫光伏科技有限公司 | Silicon chip cutting anti-settling agent and mortar cutting fluid |
| CN114606392A (en) * | 2022-03-16 | 2022-06-10 | 贵研资源（易门）有限公司 | Method for separating platinum group metal-containing coating in waste VOCs metal carrier catalyst |
| CN114854501A (en) * | 2022-05-12 | 2022-08-05 | 常州时创能源股份有限公司 | Additive for cleaning silicon wafer and application thereof |
| CN114854500A (en) * | 2022-05-12 | 2022-08-05 | 常州时创能源股份有限公司 | Additive and cleaning solution for cleaning silicon wafer and cleaning method for silicon wafer after texturing |
| CN114914167A (en) * | 2022-07-11 | 2022-08-16 | 广州粤芯半导体技术有限公司 | Cleaning solution monitoring method and system |
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Open date: 20101110 |