CN108659915A - Silicon chip cutting anti-settling agent and mortar cutting fluid - Google Patents
Silicon chip cutting anti-settling agent and mortar cutting fluid Download PDFInfo
- Publication number
- CN108659915A CN108659915A CN201710193701.5A CN201710193701A CN108659915A CN 108659915 A CN108659915 A CN 108659915A CN 201710193701 A CN201710193701 A CN 201710193701A CN 108659915 A CN108659915 A CN 108659915A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- agent
- mortar
- acid
- chip cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M161/00—Lubricating compositions characterised by the additive being a mixture of a macromolecular compound and a non-macromolecular compound, each of these compounds being essential
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M169/00—Lubricating compositions characterised by containing as components a mixture of at least two types of ingredient selected from base-materials, thickeners or additives, covered by the preceding groups, each of these compounds being essential
- C10M169/04—Mixtures of base-materials and additives
- C10M169/044—Mixtures of base-materials and additives the additives being a mixture of non-macromolecular and macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2201/00—Inorganic compounds or elements as ingredients in lubricant compositions
- C10M2201/02—Water
- C10M2201/022—Hydrogen peroxide; Oxygenated water
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2201/00—Inorganic compounds or elements as ingredients in lubricant compositions
- C10M2201/08—Inorganic acids or salts thereof
- C10M2201/081—Inorganic acids or salts thereof containing halogen
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
- C10M2207/10—Carboxylix acids; Neutral salts thereof
- C10M2207/12—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2207/121—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of seven or less carbon atoms
- C10M2207/122—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of seven or less carbon atoms monocarboxylic
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
- C10M2207/10—Carboxylix acids; Neutral salts thereof
- C10M2207/12—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2207/125—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of eight up to twenty-nine carbon atoms, i.e. fatty acids
- C10M2207/126—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of eight up to twenty-nine carbon atoms, i.e. fatty acids monocarboxylic
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/02—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/08—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds containing monomers having an unsaturated radical bound to a carboxyl radical, e.g. acrylate type
- C10M2209/084—Acrylate; Methacrylate
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
- C10M2209/104—Polyethers, i.e. containing di- or higher polyoxyalkylene groups of alkylene oxides containing two carbon atoms only
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
- C10M2209/107—Polyethers, i.e. containing di- or higher polyoxyalkylene groups of two or more specified different alkylene oxides covered by groups C10M2209/104 - C10M2209/106
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
- C10M2209/108—Polyethers, i.e. containing di- or higher polyoxyalkylene groups etherified
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
- C10N2030/04—Detergent property or dispersant property
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The present invention relates to a kind of silicon chip cutting anti-settling agent and mortar cutting fluids.Above-mentioned silicon chip cutting anti-settling agent includes suppression alkali pH adjusting agent, surfactant, silicon powder surface passivator, super absorbent resin and complexing agent.It has been investigated that above-mentioned silicon chip cutting anti-settling agent is applied in mortar cutting fluid, each component in anti-settling agent can integrally improve the dispersibility of mortar, to make the particle in mortar be not easy to deposit.Moreover, it relates to a kind of silicon chip cutting mortar cutting fluid.
Description
Technical field
The present invention relates to silicon chip manufacture fields, more particularly to a kind of silicon chip cutting anti-settling agent and mortar cutting fluid.
Background technology
New energy industry comes into new epoch, especially solar energy and has obtained extensive concern at present, develops and uses
Solar energy resources have extremely for saving conventional energy resource, conservation of nature environment, promoting economic development and improving people's lives
Important meaning.Use to its thermal energy, the discovery of photovoltaic effect are not limited solely at present for the use of solar energy
The phenomenon that greatly improving some areas electricity shortage, i.e., it is defeated the luminous energy of reception to be converted by electric energy by solar cell
Go out.
Wherein, semiconductor silicon is due to its unique physics, chemically and electrically performance, by as the higher solar energy of cost performance
Battery material.The occupation rate of market of monocrystalline silicon battery, polycrystal silicon cell and amorphous silicon film battery is more than 70% at present, silicon material
The supply of material is still had too many difficulties to cope in the world, and demand rises year by year.
In solar silicon wafers production process, current prevailing technology is mortar wire cutting technology, and cardinal principle is steel wire
It drives mortar abrasive grain to carry out three-body-abrasion to silico briquette to cut, there is a large amount of silicon powder to generate in cutting process.According to life
From the point of view of statistical result in production, about 45% silicon materials are ground into silica flour and enter mortar system in silicon chip working process
System.
There are serious deposition problems in silicon chip cutting process for traditional mortar, i.e., because of mortar product in silicon chip cutting process
Matter causes chip that cannot remove saw kerf in time extremely, to cause to block, causes silicon chip final product quality to decline, influences into moral character
Can, increase processing cost.In addition, the clast of deposition can remain on the silicon chip surface processed, dirty piece rate and broken is considerably increased
Piece rate, cleaning process cost in road after increasing.Therefore, mortar deposition problems seriously restrict Si wafer quality and production cost.
Invention content
Based on this, it is necessary to there are problems that particle deposition for the mortar for being traditionally used for silicon chip cutting, provide one kind
Particle is set to be not easy the silicon chip cutting anti-settling agent and mortar cutting fluid of deposition.
A kind of silicon chip cutting anti-settling agent, including suppression alkali pH adjusting agent, surfactant, silicon powder surface passivator, high suction
Water-base resin and complexing agent.
It has been investigated that above-mentioned silicon chip cutting anti-settling agent is applied in mortar cutting fluid, each group in anti-settling agent
Divide the whole dispersibility that can improve mortar, to make the particle in mortar be not easy to deposit.
The suppression alkali pH adjusting agent, the surfactant, silicon powder surface passivation in one of the embodiments,
The mass ratio of agent, the super absorbent resin and the complexing agent is 2~5:1~2:2~5:5~10:1~2.
In one of the embodiments, the suppression alkali pH adjusting agent be selected from hydrochloric acid, acetic acid, citric acid, tartaric acid, oneself two
One or more of acid, malonic acid and dilute sulfuric acid.
The suppression alkali pH adjusting agent is made of hydrochloric acid and acetic acid in one of the embodiments, the hydrochloric acid and the second
The mass ratio of acid is 1:1.
The silicon powder surface passivator is selected from hydrogen peroxide, tert-butyl hydroperoxide, peroxide in one of the embodiments,
Change one or more of benzoic acid and hypochlorous acid.
The super absorbent resin is selected from discoloration silica gel, carboxylated starch, starch sulfonate in one of the embodiments,
One or more of resin, hydroxypropylation cellulose, acrylic resin and polyvinyl alcohol resin.
The complexing agent is selected from oleic acid, citric acid, triethyl ethylenediamine tetraacetic acid (EDTA) and glucose in one of the embodiments,
One or more of.
Further include antifoaming agent in one of the embodiments, it is the suppression alkali pH adjusting agent, the surfactant, described
Silicon powder surface passivator, the super absorbent resin, the complexing agent and the antifoaming agent mass ratio be 2~5:1~2:2~
5:5~10:1~2:0.2~2.
A kind of silicon chip cutting mortar cutting fluid, including above-mentioned silicon chip cutting anti-settling agent are also provided.
It has been investigated that due to containing above-mentioned silicon chip cutting anti-settling agent, then anti-settling agent in the mortar cutting fluid of the present invention
In each component can integrally improve the dispersibility of mortar, to make the particle in mortar be not easy to deposit.
The silicon chip cutting accounts for the quality hundred of silicon chip cutting mortar cutting fluid with anti-settling agent in one of the embodiments,
Divide than being 0.2%~0.4%.
Specific implementation mode
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with specific implementation mode,
The present invention will be described in further detail.It should be appreciated that the specific embodiments described herein are only used to explain this hair
It is bright, it is not intended to limit the present invention.
Unless otherwise defined, all of technologies and scientific terms used here by the article and belong to the technical field of the present invention
The normally understood meaning of technical staff is identical.Used term is intended merely to description tool in the description of the invention herein
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more
Any and all combinations of relevant Listed Items.
In solar silicon wafers processing, the dispersibility of mortar is one of an important factor for influencing cutting effect.Mortar disperses
Property it is good, cutting efficiency is just high, is easy to generate swollen and subsequent broken string, wire jumper if the deposition of bulky grain occurs in mortar
The defects of silicon chip surface stria, TTV, chipping.The present inventor there are two factor by the study found that be easy to cause mortar
Deposition：First, air humidity, if air humidity is larger, especially plum rain season, the water absorption rate of polyethylene glycol (PEG) is inclined in mortar
Height, the abnormal situation of mortar deposition are easier to occur；Second is that the silica flour grain size in production is generally at 2 μm or so, specific surface area compared with
Greatly, and a large amount of unsaturated dangling bonds are contained on surface, cause its reactivity higher, increase the activity reacted with water, simultaneously
Steel wire also will produce a large amount of iron filings in cutting, and iron filings granularity is small, and large specific surface area, reactivity is equally higher, very great Cheng
The pH that mortar is affected on degree, pH is neutral or slant acidity before cutting is found in production, and waste mortar pH reaches more alkaline after cutting
State, that is to say, that iron powder and slurry actions can make pH mobile to alkalinity, this greatly exacerbates reacting for silica flour and water, greatly
The silicic acid of amount generates the deposition exception that can be further exacerbated by mortar.
To solve the above-mentioned problems, the present invention provides a kind of silicon chip cutting anti-settling agent.Above-mentioned silicon chip cutting anti-settling agent
Including suppression alkali pH adjusting agent, surfactant, silicon powder surface passivator, super absorbent resin and complexing agent.
More preferably, press down alkali pH adjusting agent, surfactant, silicon powder surface passivator, super absorbent resin and complexing agent
Mass ratio is 2~5:1~2:2~5:5~10:1~2.In this ratio range, complement each other between each component, it can
Synergistic effect is played, the dispersibility of mortar can be integrally improved, to make the particle in mortar be not easy to deposit.
Preferably, suppression alkali pH adjusting agent is selected from hydrochloric acid, acetic acid, citric acid, tartaric acid, adipic acid, malonic acid and dilute sulfuric acid
One or more of.Since iron powder and slurry actions can make pH mobile to alkalinity, however, silica flour and mortar under alkaline condition
In reaction of moisture it is more violent, a large amount of silicic acid generate can be further exacerbated by mortar deposition it is abnormal.In the anti-settling agent of the present invention
Suppression alkali pH adjusting agent can then inhibit the pH of mortar mobile to alkalinity, to by the pH of mortar controls in balance point range.
It is further preferred that suppression alkali pH adjusting agent is made of hydrochloric acid and acetic acid, the mass ratio of hydrochloric acid and acetic acid is 1:1.One
Aspect, acetic acid can play the role of buffering, reduce the severe degree that pure hydrochloric acid is reacted with iron filings, make reaction more leniently into
Row；On the other hand, the presence of hydrochloric acid can reduce the viscosity of mortar.That is, hydrochloric acid and acetic acid are 1 according to mass ratio:1 makees
It is used for suppression alkali pH adjusting agent, the two can complement each other, and integrally play the role of the pH value for adjusting mortar, avoid the pH of mortar
To alkalinity bad problem of mortar dispersibility caused by mobile.It is, of course, understood that the suppression alkali pH adjusting agent of the present invention is also
Other suppression alkali pH adjusting agents can be selected from.
Preferably, surfactant is selected from nonylphenol polyoxyethylene ether, diisooctyl succinate sodium sulfonate, dodecyl sulphur
One or more of sour sodium and acrylic acid.It is used since above-mentioned anti-settling agent needs to be added in mortar cutting fluid, mentioned kind
Surfactant can then allow dispersibility of each component in mortar cutting fluid more preferable.It is, of course, understood that this hair
Bright surfactant is also selected from other surfaces activating agent.
Preferably, silicon powder surface passivator is selected from hydrogen peroxide, tert-butyl hydroperoxide, perbenzoic acid and hypochlorous acid
One or more of.The silicon powder surface passivator of mentioned kind can make the Surface Creation silica of silica flour, in silicon
One layer of passivating film of Surface Creation of powder, since the reactivity of the reactivity ratio's silica flour and water of silica and water is much lower,
Therefore the silicon powder surface passivator of mentioned kind can reduce the reactivity of silicon and water, reduce the generation of silicic acid, to avoid sand
The deposition of slurry.It is, of course, understood that the silicon powder surface passivator of the present invention is also selected from the passivation of other silicon powder surfaces
Agent.
Preferably, super absorbent resin is selected from discoloration silica gel, carboxylated starch, starch sulfonic acid salt resin, hydroxypropyl chemical fibre
One or more of dimension element, acrylic resin and polyvinyl alcohol resin.The super absorbent resin of mentioned kind can then reduce
The content of moisture, to avoid the deposition of mortar.It is, of course, understood that the super absorbent resin of the present invention can also select
From other super absorbent resins.
Preferably, complexing agent is selected from one or more of oleic acid, citric acid, triethyl ethylenediamine tetraacetic acid (EDTA) and glucose.
Since mortar cutting fluid is to add a variety of additive compounds based on polyethylene glycol and form, such as triethanolamine, and mentioned kind
Complexing agent the triethanolamine in mortar cutting fluid can be complexed, to inhibit the pH of mortar mobile to alkalinity.Wherein, complexing agent
It preferably is selected from oleic acid.It is, of course, understood that the complexing agent of the present invention is also selected from other complexing agents.
Preferably, silicon chip cutting anti-settling agent of the invention further includes antifoaming agent.Gather it is further preferred that antifoaming agent is selected from
Ethylene oxide polyoxypropylene pentaerythrite ether, polyoxyethylene polyoxy propyl alcohol amidogen ether, polypropylene glycerol aether, polyoxyethylene polyoxypropylene
One or more of glycerin ether, organosilicon modified polyether and dimethyl silicone polymer.The antifoaming agent of mentioned kind can be eliminated
The bubble generated in reaction process reduces surface tension, is conducive to the dispersibility of mortar.It is, of course, understood that of the invention
Antifoaming agent be also selected from other antifoaming agent.
It is further preferred that suppression alkali pH adjusting agent, surfactant, silicon powder surface passivator, super absorbent resin, complexing
The mass ratio of agent and antifoaming agent is 2~5:1~2:2~5:5~10:1~2:0.2~2.
The above-mentioned silicon chip cutting anti-settling agent of the present invention, suppression alkali pH adjusting agent can inhibit the pH of mortar mobile to alkalinity,
To which by the pH of mortar controls, in balance point range, surfactant can allow the dispersibility of each component more preferable, silica flour table
Face passivator can be in one layer of passivating film of Surface Creation of silica flour, to reduce the reactivity of silicon and water, super absorbent resin
Low-moisture content can drop, and the triethanolamine in mortar cutting fluid can be complexed in complexing agent, to inhibit the pH of mortar to alkali
Property movement.Above-mentioned each component integrally improves the dispersibility of mortar, to make the particle in mortar be not easy to deposit.
The above-mentioned silicon chip cutting anti-settling agent of the present invention has good effect for the larger area of humidity, especially pair
Swollen exception of deposition, silica flour in cutting process are reunited abnormal etc. with excellent improvement performance.Can ensure humidity compared with
Inhibit swollen of the deposition of mortar, prevention silica flour to be reacted with water under big environment, reduce the mass percent of bulky grain in mortar,
Maintain the normal production of mortar.Anti-settling agent can also inhibit pH variation of the mortar in cutting process simultaneously, avoid leading extremely because of pH
The dispersed bad problem of the mortar of cause.
In addition, the present invention also provides a kind of silicon chip cutting mortar cutting fluid, including above-mentioned silicon chip cutting anti-settling agent.
Preferably, silicon chip cutting with anti-settling agent account for silicon chip cutting mortar cutting fluid mass percent be 0.2%~
0.4%.Optimal, the mass percent that silicon chip cutting accounts for silicon chip cutting mortar cutting fluid with anti-settling agent is 0.4%.
In the above-mentioned silicon chip cutting mortar cutting fluid of the present invention, due to including above-mentioned silicon chip cutting anti-settling agent, that
, suppression alkali pH adjusting agent can inhibit the pH of mortar mobile to alkalinity, to control the pH of mortar in balance point range, table
Face activating agent can allow the dispersibility of each component more preferable, and silicon powder surface passivator can be in one layer of passivation of Surface Creation of silica flour
Film, to reduce the reactivity of silicon and water, low-moisture content can drop in super absorbent resin, and mortar can be complexed in complexing agent
Triethanolamine in cutting liquid, to inhibit the pH of mortar mobile to alkalinity.Above-mentioned each component integrally improves the dispersion of mortar
Property, to make the particle in mortar be not easy to deposit.
Below in conjunction with specific embodiment, the present invention is described further.
Raw material used in following embodiment includes：Acetic acid, No. CAS：367-64-6；Hydrochloric acid, No. CAS：7641-01-0；
Hydrogen peroxide, CAS 7722-84-1；Oleic acid, No. CAS：112-80-1；Nonylphenol polyoxyethylene ether, No. CAS：9016-45-9；
Acrylic absorbent resin, No. CAS：25035-6-2.
Examples 1 to 3 and comparative example 1,2
According to the weight ratio of table 1, using PEG solution as solvent, each raw material is sufficiently stirred with PEG solution at 30 DEG C
It is uniformly mixed, is cooled to room temperature and can be prepared by the corresponding silicon chip cutting anti-settling agent being scattered in PEG solution.
Table 1
After obtaining the silicon chip cutting anti-settling agent of table 1 being scattered in PEG solution, by the Examples 1 to 3 of same quality
According to mass ratio it is 1 with the anti-settling agent being scattered in PEG solution of comparative example 1,2 and mortar cutting fluid:50 are uniformly mixed, together
When, the mortar cutting fluid of anti-settling agent as a comparison case 3 will be not added with, be separately added into successively later 1000 mesh silica flours, moisture and
1000 mesh iron powders so that the mass percent of 1000 mesh silica flours, moisture and 1000 mesh iron powders is respectively 10%, 2% and 2%.Point
The mortar for not taking 100g successively, obtains the mortar of Examples 1 to 3 and comparative example 1~3.
Performance test：
The mass percent of mortar particle of the quantitative measurment grain size more than 35 μm, obtains experimental result, such as after 36 hours
Shown in table 2：
Table 2
By the Examples 1 to 3 of table 2 carry out comparison as can be seen that embodiment 2 mortar in bulky grain mass percent most
Low, this shows when the percentage composition of acetic acid and hydrochloric acid is respectively 1.5% and 1.5% in the anti-settling agent being dispersed in PEG solution,
That is, acetic acid, hydrochloric acid, hydrogen peroxide, oleic acid, acrylic absorbent resin, polyoxyethylene polyoxypropylene pentaerythrite ether and nonyl phenol
The mass ratio of polyoxyethylene ether is 1.5:1.5:5:2:10:0.5:When 5, the effect that anti-settling agent improves the dispersibility of mortar is optimal.
Examples 1 to 3 and comparative example 1 compare the matter of bulky grain in the mortar that can be seen that Examples 1 to 3
Amount percentage is below the mass percent of bulky grain in the mortar of comparative example 1, this show in anti-settling agent added with acetic acid and
Hydrochloric acid can improve the dispersibility of mortar, to make the particle in mortar be not easy to deposit.
Embodiment 2 and comparative example 2 compare the mass percent of bulky grain in the mortar that can be seen that embodiment 2
Less than the mass percent of bulky grain in the mortar of comparative example 2, this shows to improve added with hydrogen peroxide in anti-settling agent
The dispersibility of mortar, to make the particle in mortar be not easy to deposit.
Examples 1 to 3 and comparative example 3 compare the quality of bulky grain in the mortar that can be seen that Examples 1 to 3
Percentage is below the mass percent of bulky grain in the mortar of comparative example 3, this shows in mortar added with the anti-of the present invention
Heavy agent hydrogen can significantly improve the dispersibility of mortar, to make the particle in mortar be not easy to deposit.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of silicon chip cutting anti-settling agent, which is characterized in that blunt including suppression alkali pH adjusting agent, surfactant, silicon powder surface
Agent, super absorbent resin and complexing agent.
2. silicon chip cutting anti-settling agent according to claim 1, which is characterized in that the suppression alkali pH adjusting agent, the table
Face activating agent, the silicon powder surface passivator, the super absorbent resin and the complexing agent mass ratio be 2~5:1~2:2
~5:5~10:1~2.
3. silicon chip cutting anti-settling agent according to claim 1, which is characterized in that the suppression alkali pH adjusting agent is selected from salt
One or more of acid, acetic acid, citric acid, tartaric acid, adipic acid, malonic acid and dilute sulfuric acid.
4. silicon chip cutting anti-settling agent according to claim 1 or 3, which is characterized in that the suppression alkali pH adjusting agent is by salt
The mass ratio of acid and acetic acid composition, the hydrochloric acid and the acetic acid is 1:1.
5. silicon chip cutting anti-settling agent according to claim 1, which is characterized in that the silicon powder surface passivator was selected from
One or more of hydrogen oxide, tert-butyl hydroperoxide, perbenzoic acid and hypochlorous acid.
6. silicon chip cutting anti-settling agent according to claim 1, which is characterized in that the super absorbent resin is selected from discoloration
One in silica gel, carboxylated starch, starch sulfonic acid salt resin, hydroxypropylation cellulose, acrylic resin and polyvinyl alcohol resin
Kind is several.
7. silicon chip cutting anti-settling agent according to claim 1, which is characterized in that the complexing agent is selected from oleic acid, lemon
One or more of acid, triethyl ethylenediamine tetraacetic acid (EDTA) and glucose.
8. silicon chip cutting anti-settling agent according to claim 1, which is characterized in that further include antifoaming agent, the suppression alkali pH
Conditioning agent, the surfactant, the silicon powder surface passivator, the super absorbent resin, the complexing agent disappear with described
The mass ratio of infusion is 2~5:1~2:2~5:5~10:1~2:0.2~2.
9. a kind of silicon chip cutting mortar cutting fluid, which is characterized in that including silicon such as according to any one of claims 1 to 8
Piece cutting anti-settling agent.
10. silicon chip cutting mortar cutting fluid according to claim 9, which is characterized in that the silicon chip is cut with anti-settling
The mass percent that agent accounts for silicon chip cutting mortar cutting fluid is 0.2%~0.4%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710193701.5A CN108659915A (en) | 2017-03-28 | 2017-03-28 | Silicon chip cutting anti-settling agent and mortar cutting fluid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710193701.5A CN108659915A (en) | 2017-03-28 | 2017-03-28 | Silicon chip cutting anti-settling agent and mortar cutting fluid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108659915A true CN108659915A (en) | 2018-10-16 |
Family
ID=63785816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710193701.5A Pending CN108659915A (en) | 2017-03-28 | 2017-03-28 | Silicon chip cutting anti-settling agent and mortar cutting fluid |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108659915A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110437780A (en) * | 2019-07-31 | 2019-11-12 | 南宁珀源能源材料有限公司 | Bar glue and preparation method thereof for diamond wire silicon slice |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020034923A1 (en) * | 2000-07-28 | 2002-03-21 | Bookbinder Dana C. | High performance cutting fluids for glassy, crystalline, or aggregate materials |
| CN1618936A (en) * | 2004-09-30 | 2005-05-25 | 刘玉岭 | Wire cutting liquid of semiconductor material |
| CN101880609A (en) * | 2010-06-30 | 2010-11-10 | 国电光伏(江苏)有限公司 | Silicon wafer cleaning agent and use method thereof |
| CN102851108A (en) * | 2012-08-03 | 2013-01-02 | 江西赛维Ldk太阳能高科技有限公司 | Diamond wire cutting fluid and preparation method thereof |
| CN103525532A (en) * | 2013-10-18 | 2014-01-22 | 山东昊达化学有限公司 | Emery line cutting liquid and preparation method thereof |
| CN104395448A (en) * | 2012-06-29 | 2015-03-04 | 出光兴产株式会社 | Aqueous processing fluid |
| CN105985852A (en) * | 2015-02-11 | 2016-10-05 | 常州君合科技股份有限公司 | Novel diamond abrasive wire cutting fluid |
| CN106010760A (en) * | 2016-05-19 | 2016-10-12 | 常州向鼎新材料科技有限公司 | Mortar additive for solar slicing as well as preparation method and use method thereof |
-
2017
- 2017-03-28 CN CN201710193701.5A patent/CN108659915A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020034923A1 (en) * | 2000-07-28 | 2002-03-21 | Bookbinder Dana C. | High performance cutting fluids for glassy, crystalline, or aggregate materials |
| CN1618936A (en) * | 2004-09-30 | 2005-05-25 | 刘玉岭 | Wire cutting liquid of semiconductor material |
| CN101880609A (en) * | 2010-06-30 | 2010-11-10 | 国电光伏(江苏)有限公司 | Silicon wafer cleaning agent and use method thereof |
| CN104395448A (en) * | 2012-06-29 | 2015-03-04 | 出光兴产株式会社 | Aqueous processing fluid |
| CN102851108A (en) * | 2012-08-03 | 2013-01-02 | 江西赛维Ldk太阳能高科技有限公司 | Diamond wire cutting fluid and preparation method thereof |
| CN103525532A (en) * | 2013-10-18 | 2014-01-22 | 山东昊达化学有限公司 | Emery line cutting liquid and preparation method thereof |
| CN105985852A (en) * | 2015-02-11 | 2016-10-05 | 常州君合科技股份有限公司 | Novel diamond abrasive wire cutting fluid |
| CN106010760A (en) * | 2016-05-19 | 2016-10-12 | 常州向鼎新材料科技有限公司 | Mortar additive for solar slicing as well as preparation method and use method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110437780A (en) * | 2019-07-31 | 2019-11-12 | 南宁珀源能源材料有限公司 | Bar glue and preparation method thereof for diamond wire silicon slice |
| CN110437780B (en) * | 2019-07-31 | 2021-12-21 | 南宁珀源能源材料有限公司 | Rod adhesive for diamond wire silicon slice and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110003798B (en) | Polishing solution and preparation method and application thereof | |
| CN104804649B (en) | A kind of polishing fluid for gallium nitride | |
| CN107545941A (en) | A kind of method for preparing solar cell front side silver paste slurry | |
| CN102888656A (en) | High-boiling point monocrystalline silicon wafer surface texturing additive and using method thereof | |
| CN105153943A (en) | Anti-cleavage polishing solution for gallium oxide wafer and preparation method of anti-cleavage polishing solution | |
| CN111392739B (en) | Preparation method and application of high-dispersity thickening type silicon dioxide | |
| CN105385358A (en) | Polishing solution for ceramic bonded sapphire polishing, and preparation method thereof | |
| CN106398807B (en) | It is a kind of for cutting the Buddha's warrior attendant wire cutting liquid of silicon wafer | |
| CN105985852A (en) | Novel diamond abrasive wire cutting fluid | |
| CN112877784A (en) | Additive for silicon wafer texturing by alkali liquor | |
| CN108659915A (en) | Silicon chip cutting anti-settling agent and mortar cutting fluid | |
| CN101781525A (en) | Wafer rough polishing solution | |
| CN102952620B (en) | Water-based cutting fluid of hard brittle material and preparation method of water-based cutting fluid | |
| CN102816530B (en) | A kind of chemical mechanical polishing liquid | |
| CN109680339A (en) | Polysilicon chip acid texturing assistant agent and polysilicon chip acid etching method | |
| CN102321497B (en) | Solar silicon slice cutting liquid | |
| CN107686779A (en) | Semiconductor cleaning agent for silicon microsection and preparation method thereof | |
| CN107545942A (en) | A kind of solar cell front side silver paste slurry | |
| CN111117623A (en) | Acidic etching auxiliary agent and preparation method thereof | |
| CN111020707A (en) | Monocrystalline silicon texturing auxiliary agent and application thereof | |
| CN110592681A (en) | Texturing process for improving efficiency and yield of reworked sheets | |
| CN110023449A (en) | Composition for polishing and grinding method | |
| CN102839427A (en) | Mono-crystalline silicon piece texturing alcohol-free additives and using method thereof | |
| CN107858757A (en) | Buddha's warrior attendant wire cutting polysilicon chip special acid flocking additive and its application method | |
| CN108831966A (en) | A kind of cleaning solution for photovoltaic cell board group |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20181016 |