CN101781525A - Wafer rough polishing solution - Google Patents
Wafer rough polishing solution Download PDFInfo
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- CN101781525A CN101781525A CN200910001033A CN200910001033A CN101781525A CN 101781525 A CN101781525 A CN 101781525A CN 200910001033 A CN200910001033 A CN 200910001033A CN 200910001033 A CN200910001033 A CN 200910001033A CN 101781525 A CN101781525 A CN 101781525A
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- polishing
- polishing solution
- wafer
- rough polishing
- wafer rough
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Abstract
The invention discloses a wafer rough polishing solution. The wafer rough polishing solution adopts the technical scheme that the polishing solution is prepared by mixing and stirring the following raw materials in percentage by weight: 2 to 50 percent of silicon dioxide abrasive material, 0.2 to 10 percent of pH regulator, 0.1 to 5 percent of chelating agent, 0.01 to 5 percent of surfactant and the balance of deionized water. By adopting the technical scheme, the polishing solution has stable solution performance under the wafer rough polishing application condition, and the polishing speed, polishing uniformity and surface quality can meet the manufacture requirement.
Description
Technical field
The present invention relates to the wafer rough polishing solution of a kind of photoelectricity and IC industry.
Background technology
Among the whole world semiconductor element manufacturer, the chemical-mechanical planarization technology has become the gordian technique that is applied to the semiconductor element manufacturing engineering at present.Wherein chemical mechanical polishing liquid is the most critical material in the CMP technology, adds that both costs of polishing pad account for CMP technology cost more than 60%.
Only there is minority supplier in the chemical mechanical polishing liquid whole world, the basic dependence on import of demand of domestic semi-conductor chip factory, therefore, domesticly can the production few products come like product outside the subrogate country. wherein the wafer chemical mechanical polishing liquid mainly is as polishing particles with nano silicon both at home and abroad, consumption is very big. but the silicon-dioxide polishing fluid of domestic preparation is because the particle in when preparation is smaller, and skewness, while metal ion content height, caused polishing speed further not improve, and, limited the use of product because of chemical etching and mechanical effect can not balance cause serious damage and high surfaceness.
Therefore be necessary to propose the big also polishing fluid of narrowly distributing of a kind of particle diameter, to address the above problem.Can under wafer rough polishing application conditions, have the big also stable polishing fluid of narrowly distributing of particle diameter, and polishing speed, polishing uniformity coefficient and surface quality meet processing request.
Summary of the invention
The object of the present invention is to provide the big also polishing fluid of narrowly distributing of a kind of particle diameter, can under wafer rough polishing application conditions, have stable solution property, and polishing speed, polishing uniformity coefficient and surface quality meet processing request.
To achieve these goals, technical scheme of the present invention is as follows:
A kind of wafer rough polishing solution is characterized in that hundred parts of the component of polishing fluid and weight are such as down: abrasive silica 2-50; PH conditioning agent 0.2-10; Sequestrant 0.1-5; Tensio-active agent 0.01-5; Surplus is a deionized water.
Adopt technical scheme of the present invention, have the following advantages:
1) PH conditioning agent of the present invention is alkaline organic amine, as at least a in triethylamine and the diisobutyl amine.Be used for regulating the pH value of polishing fluid, make silicon-dioxide be in good suspended state, stable polishing speed is provided.The amine that adopts not containing metal constituents avoids staining of silicon chip influenced the performance of later device.
Described sequestrant is at least a in ethylenediamine tetraacetic acid (EDTA) and citric acid and the salt thereof.The a large amount of metal ions that can bring into preceding processing procedure in conjunction with and remove, thereby improve the quality of polished section.
Described tensio-active agent is pure ethers nonionic class tensio-active agent, as OP-10, and TX-10 etc., can preferentially adsorbed, form the physical adsorption surface of long-term easy cleaning, to improve condition of surface, the transfer rate that improves the quality simultaneously is to reduce the surfaceness of wafer.
2) abrasive silica of the present invention passes through in the preparation to surface modification, improve its Surface Physical and chemical property, particle size range is 40-60nm, and passes through purifying, make its Na ion content scope＜0.07%, avoid staining of wafer influenced the performance of later device.And to regulate the pH value scope with the PH conditioning agent be 11.2-12.2, makes polishing fluid be in the stable suspersion state.
When 3) using this polishing fluid, earlier the proportioning of polishing fluid of being prepared and deionized water is diluted to SiO2 content and is about 2.5%, after the silicon chip passed examination after the abrasive disc cleaning, adopting the U.S.'s 3800 type chemical-mechanical polishing mathings, under the situation of Rodel ICl400 polishing pad, polish pressure 200g/cm2, rotating speed 55rpm, polishing flow 200ml/min, polish temperature 48-50 ℃.
Test following wafer respectively:
1. 4 cun P of silicon (100) are carried out specified time processing, clean after the polishing, polishing speed is that surface quality does not have major injury more than the 1um/min, low surface roughness.
2. silica glass is carried out specified time processing, clean after the polishing, polishing speed is 0.4-0.6um/min, and surface quality does not have major injury, low surface roughness.
3. sapphire is carried out specified time processing, clean after the polishing, polishing speed is 0.2-0.3um/min, and surface quality does not have major injury, low surface roughness.
Embodiment
Embodiment 1
Configuration 100 gram silicon dioxide abradant polishing solutions.
To the 40+ of 92 gram 40-60nm particle diameters/-add 6 in the silica hydrosol solution (is 1.26 at 25 ℃ of proportions) of 0.5wt% to restrain triethylamines, 1.5 gram ethylenediamine tetraacetic acid (EDTA), 0.5 gram surfactivity TX-10, mix together, the polishing fluid pH value scope of being joined is at 11.2-12.2, Na ion content scope is at 0.04-0.07%, and viscosity is less than 5mPa.s.
Embodiment 2
Configuration 1200 gram silicon dioxide abradant polishing solutions.
To the 50+ of 1060 gram 50-60nm particle diameters/-add 97 in the silica hydrosol solution (is 1.37 at 25 ℃ of proportions) of 0.5wt% to restrain the diisobutyl amine, 34 gram citric acids, 9 gram tensio-active agent OP-10, mix together, the polishing fluid pH value scope of being joined is at 11.2-12.2, Na ion content scope is at 0.04-0.07%, and viscosity is less than 25mPa.s.
Though the present invention with preferred embodiment openly as above; but it is not in order to qualification the present invention, any person skilled in the art, without departing from the spirit and scope of the present invention; all can do various changes and modification, so protection scope of the present invention should be with being as the criterion that claims were defined.
Claims (7)
1. wafer rough polishing solution is characterized in that hundred parts of the component of polishing fluid and weight are such as down: abrasive silica 2-50; PH conditioning agent 0.2-10; Sequestrant 0.1-5; Tensio-active agent 0.01-5; Surplus is a deionized water.
2. a kind of wafer rough polishing solution according to claim 1 is characterized in that, the PH conditioning agent is alkaline organic amine, as at least a in triethylamine and the diisobutyl amine.
3. a kind of wafer rough polishing solution according to claim 1 is characterized in that, sequestrant is at least a in ethylenediamine tetraacetic acid (EDTA) and citric acid and the salt thereof.
4. a kind of wafer rough polishing solution according to claim 1 is characterized in that, tensio-active agent is pure ethers nonionic class tensio-active agent, as at least a among OP-10, the TX-10.
5. a kind of wafer rough polishing solution according to claim 1 is characterized in that, the pH value scope of described polishing fluid is 11.2-12.2, and particle size range is 40-60nm.
6. a kind of wafer rough polishing solution according to claim 1 is characterized in that, Na ion content scope＜0.07% of described polishing fluid.
7. a kind of wafer rough polishing solution according to claim 5 is characterized in that, described polishing fluid is 1um/min for silicon wafer polishing speed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910001033A CN101781525A (en) | 2009-01-20 | 2009-01-20 | Wafer rough polishing solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910001033A CN101781525A (en) | 2009-01-20 | 2009-01-20 | Wafer rough polishing solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101781525A true CN101781525A (en) | 2010-07-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910001033A Pending CN101781525A (en) | 2009-01-20 | 2009-01-20 | Wafer rough polishing solution |
Country Status (1)
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| CN (1) | CN101781525A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102911606A (en) * | 2012-11-10 | 2013-02-06 | 长治虹源科技晶片技术有限公司 | Sapphire polishing solution and preparation method thereof |
| CN103087637A (en) * | 2011-11-07 | 2013-05-08 | 盟智科技股份有限公司 | Slurry composition and use thereof |
| CN108485532A (en) * | 2018-04-23 | 2018-09-04 | 江苏金琥珀光学科技股份有限公司 | The sapphire polishing liquid and its polishing process of high surface smoothness |
| CN113416493A (en) * | 2021-06-02 | 2021-09-21 | 万华化学集团电子材料有限公司 | Preparation method of silicon wafer polishing composition with stable storage, composition and use method thereof |
| CN113755099A (en) * | 2020-05-27 | 2021-12-07 | 万华化学集团电子材料有限公司 | Sapphire chemical mechanical polishing solution and application thereof |
| CN113881347A (en) * | 2021-10-15 | 2022-01-04 | 深圳市科玺化工有限公司 | Chemical mechanical precision polishing liquid for silicon wafers |
| CN115895451A (en) * | 2021-09-30 | 2023-04-04 | 昆山欣谷微电子材料有限公司 | Alkaline polishing solution composition for preparing hydrophilic surface silicon wafer |
-
2009
- 2009-01-20 CN CN200910001033A patent/CN101781525A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103087637A (en) * | 2011-11-07 | 2013-05-08 | 盟智科技股份有限公司 | Slurry composition and use thereof |
| CN102911606A (en) * | 2012-11-10 | 2013-02-06 | 长治虹源科技晶片技术有限公司 | Sapphire polishing solution and preparation method thereof |
| CN108485532A (en) * | 2018-04-23 | 2018-09-04 | 江苏金琥珀光学科技股份有限公司 | The sapphire polishing liquid and its polishing process of high surface smoothness |
| CN113755099A (en) * | 2020-05-27 | 2021-12-07 | 万华化学集团电子材料有限公司 | Sapphire chemical mechanical polishing solution and application thereof |
| CN113755099B (en) * | 2020-05-27 | 2022-07-12 | 万华化学集团电子材料有限公司 | Sapphire chemical mechanical polishing solution and application thereof |
| CN113416493A (en) * | 2021-06-02 | 2021-09-21 | 万华化学集团电子材料有限公司 | Preparation method of silicon wafer polishing composition with stable storage, composition and use method thereof |
| CN115895451A (en) * | 2021-09-30 | 2023-04-04 | 昆山欣谷微电子材料有限公司 | Alkaline polishing solution composition for preparing hydrophilic surface silicon wafer |
| CN113881347A (en) * | 2021-10-15 | 2022-01-04 | 深圳市科玺化工有限公司 | Chemical mechanical precision polishing liquid for silicon wafers |
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Application publication date: 20100721 |