CN101781524A - Wafer precise polishing solution - Google Patents
Wafer precise polishing solution Download PDFInfo
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- CN101781524A CN101781524A CN200910001032A CN200910001032A CN101781524A CN 101781524 A CN101781524 A CN 101781524A CN 200910001032 A CN200910001032 A CN 200910001032A CN 200910001032 A CN200910001032 A CN 200910001032A CN 101781524 A CN101781524 A CN 101781524A
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- polishing
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- precise polishing
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Abstract
The invention discloses a wafer precise polishing solution. The wafer precise polishing solution adopts the technical scheme that the polishing solution is prepared by mixing and stirring the following raw materials in percentage by weight: 2 to 10 percent of silicon dioxide abrasive material, 0.2 to 2 percent of pH regulator, 0.1 to 0.5 percent of chelating agent, 0.01 to 0.5 percent of surfactant, 0.1 to 2 percent of special additive and the balance of deionized water. By adopting the technical scheme, the polishing speed, polishing uniformity and surface quality can meet manufacture requirement under the polishing application condition; and furthermore, damage of grains of the polishing solution to the surface of the wafer in precise polishing is further reduced without severe loss of the polishing speed.
Description
Technical field
The present invention relates to a kind of wafer precise polishing solution, relate in particular to the wafer chemical mechanical polishing liquid, be applicable to the polishing of Silicon Wafer, sapphire and silica glass.
Background technology
At present, the employed precise polishing solution of silicon wafer is mainly from external import, and consumption is very big.Chemically machinery polished market in 2005 shows, about 1,100,000,000 U.S. dollars of CMP consumptive material, and wherein polishing fluid and polishing pad occupy the overwhelming majority, about 1,000,000,000 U.S. dollars.Usually the each polishing of each wafer needs the polishing fluid of 600ml at least, if produce the IC factory of 30000 wafer per month, each wafer needs the metal CMP more than 6 times at least, and present polishing fluid price is generally at 80～120 yuan/liter.Because silicon wafer is more and more strict to the requirement of precise polishing solution, need be from external import through transportation for a long time, raw material may some variation and cause that product does not reach requirement, thereby influences the normal operation of enterprise.
Therefore be necessary to propose a kind of wafer precise polishing solution, to address the above problem.Can be under wafer finishing polish application conditions polishing speed, polishing uniformity coefficient and surface quality meet processing request, and in accumulating condition stable performance usually.The polishing fluid abrasive particle is to the damage of crystal column surface, not heavy losses polishing speed when requiring simultaneously further to reduce smart the throwing.
Summary of the invention
The object of the present invention is to provide a kind of wafer precise polishing solution, can be under the wafer polishing application conditions polishing speed, polishing uniformity coefficient and surface quality meet processing request, and the polishing fluid abrasive particle is to the damage of crystal column surface, not heavy losses polishing speed when further reducing smart the throwing simultaneously.
To achieve these goals, technical scheme of the present invention is as follows:
A kind of wafer precise polishing solution, its integral part is:
Abrasive silica 2-50%; PH conditioning agent 0.2-10%; Sequestrant 0.1-5%; Tensio-active agent 0.01-5%; Special additive 0.1-2%, surplus is a deionized water, mixes, and stirs and forms.
Adopt technical scheme of the present invention, have the following advantages:
1) PH conditioning agent of the present invention is alkaline organic amine, as at least a in triethylamine and the diisobutyl amine.Be used for regulating the pH value of polishing fluid, make silicon-dioxide be in good suspended state, stable polishing speed is provided.The amine that adopts not containing metal constituents avoids staining of silicon chip influenced the performance of later device.
Described sequestrant is at least a in ethylenediamine tetraacetic acid (EDTA) and citric acid and the salt thereof.The a large amount of metal ions that can bring into preceding processing procedure in conjunction with and remove, thereby improve the quality of polished section.
Described tensio-active agent is pure ethers nonionic class tensio-active agent, as OP-10, and TX-10 etc., can preferentially adsorbed, form the physical adsorption surface of long-term easy cleaning, to improve condition of surface, the transfer rate that improves the quality simultaneously is to reduce the surfaceness of wafer.
Described special additive is a fluorine-containing material, as fluoride amine, increases the corrosion to crystal column surface, promotes chemical action, makes the not serious loss of polishing speed.
2) abrasive silica of the present invention by to surface modification, improves its Surface Physical and chemical property in the preparation, and particle size range is 30-40nm, and the polishing fluid abrasive particle is to the damage of crystal column surface when reducing smart the throwing.And, make its Na ion content scope＜0.07% by purifying, avoid staining of wafer influenced the performance of later device.And to regulate the pH value scope with the PH conditioning agent be 9-10, makes polishing fluid be in the stable suspersion state.
3) when using this polishing fluid, earlier the proportioning of polishing fluid of being prepared and deionized water is about 5% for SiO2 content, after the silicon chip passed examination after the rough polishing cleaning, adopting the U.S.'s 3800 type chemical-mechanical polishing mathings, under the situation of Rodel Suba400 polishing pad, polish pressure 200g/cm2, rotating speed 55rpm, polishing flow 200ml/min, polish temperature 20-30 ℃.
Test following wafer respectively:
1. 4 cun P of silicon (100) are carried out specified time processing, clean after the polishing, polishing speed is 0.1-0.2um/min, and surface quality is seldom damaged, low surface roughness.
2. silica glass is carried out specified time processing, clean after the polishing, polishing speed is 0.08-0.12um/min, and surface quality is seldom damaged, low surface roughness.
3. sapphire is carried out specified time processing, clean after the polishing, polishing speed is 0.04-0.06um/min, and surface quality is seldom damaged, low surface roughness.
Embodiment
Embodiment 1
Configuration 100 gram silicon dioxide abradant polishing solutions.
To the 40+ of 96.5g 30-40nm particle diameter/-add 2 gram triethylamines in the silica hydrosol solution (is 1.26 at 25 ℃ of proportions) of 0.5wt%, 0.5 gram ethylenediamine tetraacetic acid (EDTA), 0.5 gram tensio-active agent OP-10,0.5 gram fluoride amine, mix together, the polishing fluid pH value scope of being joined is at 9-10, Na ion content scope＜0.07%, and viscosity is less than 5mPa.s.
Embodiment 2
Configuration 1200 gram silicon dioxide abradant polishing solutions.
To the 50+ of 1120 gram 30-40nm particle diameters/-add 37 in the silica hydrosol solution (is 1.37 at 25 ℃ of proportions) of 0.5wt% to restrain the diisobutyl amine, 15 gram citric acids, 8 gram tensio-active agent TX-10,10 gram fluoride amines mix together, the polishing fluid pH value scope of being joined is at 9-10, Na ion content scope is＜0.07%, and viscosity is less than 25mPa.s.
Though the present invention with preferred embodiment openly as above; but it is not in order to qualification the present invention, any person skilled in the art, without departing from the spirit and scope of the present invention; all can do various changes and modification, so protection scope of the present invention should be with being as the criterion that claims were defined.
Claims (8)
1. wafer precise polishing solution is characterized in that hundred parts of the component of polishing fluid and weight are such as down: abrasive silica 2-50; PH conditioning agent 0.2-10; Sequestrant 0.1-5; Tensio-active agent 0.01-5; Special additive 0.1-2, surplus is a deionized water.
2. a kind of wafer precise polishing solution according to claim 1 is characterized in that, the PH conditioning agent is alkaline organic amine.
3. a kind of wafer precise polishing solution according to claim 1 is characterized in that, sequestrant is at least a in ethylenediamine tetraacetic acid (EDTA) and citric acid and the salt thereof.
4. a kind of wafer precise polishing solution according to claim 1 is characterized in that, tensio-active agent is pure ethers nonionic class tensio-active agent, as at least a among OP-10, the TX-10.
5. a kind of wafer precise polishing solution according to claim 1 is characterized in that special additive is a fluorine-containing material, as fluoride amine.
6. a kind of wafer precise polishing solution according to claim 1 is characterized in that, the pH value scope of described polishing fluid is 9-10, and particle size range is 30-40nm.
7. a kind of wafer precise polishing solution according to claim 1 is characterized in that, Na ion content scope＜0.07% of described polishing fluid.
8. a kind of wafer precise polishing solution according to claim 1 is characterized in that, described polishing fluid is 0.1-0.2um/min for silicon wafer polishing speed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910001032A CN101781524A (en) | 2009-01-20 | 2009-01-20 | Wafer precise polishing solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910001032A CN101781524A (en) | 2009-01-20 | 2009-01-20 | Wafer precise polishing solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101781524A true CN101781524A (en) | 2010-07-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN200910001032A Pending CN101781524A (en) | 2009-01-20 | 2009-01-20 | Wafer precise polishing solution |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102277088A (en) * | 2011-05-11 | 2011-12-14 | 上海双明光学科技有限公司 | Polishing solution for stainless carrier disc and usage thereof |
| CN102358825A (en) * | 2011-08-05 | 2012-02-22 | 清华大学 | Polishing composition for sapphire wafer |
| CN102504705A (en) * | 2011-10-17 | 2012-06-20 | 刘玉林 | Polishing solution used for precision machining of optical communication ZrO2 ceramic stub and preparation method thereof |
| CN104084878A (en) * | 2014-06-20 | 2014-10-08 | 常州市好利莱光电科技有限公司 | Preparation method for polishing solution for sapphire mobile phone panel direction A |
| CN108485532A (en) * | 2018-04-23 | 2018-09-04 | 江苏金琥珀光学科技股份有限公司 | The sapphire polishing liquid and its polishing process of high surface smoothness |
| CN110076682A (en) * | 2019-05-22 | 2019-08-02 | 大连理工大学 | A kind of Sapphire Substrate cmp method |
| CN113755099A (en) * | 2020-05-27 | 2021-12-07 | 万华化学集团电子材料有限公司 | Sapphire chemical mechanical polishing solution and application thereof |
| CN113881347A (en) * | 2021-10-15 | 2022-01-04 | 深圳市科玺化工有限公司 | Chemical mechanical precision polishing liquid for silicon wafers |
-
2009
- 2009-01-20 CN CN200910001032A patent/CN101781524A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102277088A (en) * | 2011-05-11 | 2011-12-14 | 上海双明光学科技有限公司 | Polishing solution for stainless carrier disc and usage thereof |
| CN102358825A (en) * | 2011-08-05 | 2012-02-22 | 清华大学 | Polishing composition for sapphire wafer |
| CN102504705A (en) * | 2011-10-17 | 2012-06-20 | 刘玉林 | Polishing solution used for precision machining of optical communication ZrO2 ceramic stub and preparation method thereof |
| CN102504705B (en) * | 2011-10-17 | 2014-07-09 | 河南省化工研究所有限责任公司 | Polishing solution used for precision machining of optical communication ZrO2 ceramic stub and preparation method thereof |
| CN104084878A (en) * | 2014-06-20 | 2014-10-08 | 常州市好利莱光电科技有限公司 | Preparation method for polishing solution for sapphire mobile phone panel direction A |
| CN108485532A (en) * | 2018-04-23 | 2018-09-04 | 江苏金琥珀光学科技股份有限公司 | The sapphire polishing liquid and its polishing process of high surface smoothness |
| CN110076682A (en) * | 2019-05-22 | 2019-08-02 | 大连理工大学 | A kind of Sapphire Substrate cmp method |
| CN113755099A (en) * | 2020-05-27 | 2021-12-07 | 万华化学集团电子材料有限公司 | Sapphire chemical mechanical polishing solution and application thereof |
| CN113755099B (en) * | 2020-05-27 | 2022-07-12 | 万华化学集团电子材料有限公司 | Sapphire chemical mechanical polishing solution and application thereof |
| CN113881347A (en) * | 2021-10-15 | 2022-01-04 | 深圳市科玺化工有限公司 | Chemical mechanical precision polishing liquid for silicon wafers |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20100721 |